WO2009013905A1 - 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法 - Google Patents

位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法 Download PDF

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Publication number
WO2009013905A1
WO2009013905A1 PCT/JP2008/001977 JP2008001977W WO2009013905A1 WO 2009013905 A1 WO2009013905 A1 WO 2009013905A1 JP 2008001977 W JP2008001977 W JP 2008001977W WO 2009013905 A1 WO2009013905 A1 WO 2009013905A1
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WO
WIPO (PCT)
Prior art keywords
exposure
position measuring
tool
grating
measuring system
Prior art date
Application number
PCT/JP2008/001977
Other languages
English (en)
French (fr)
Inventor
Yuho Kanaya
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009524399A priority Critical patent/JP5489068B2/ja
Priority to EP08776874.3A priority patent/EP2187430B1/en
Publication of WO2009013905A1 publication Critical patent/WO2009013905A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

　ウエハステージＷＳＴの上面に第１グレーティング（３９Ｙ1，３９Ｙ2）が配置され、該第１グレーティングの＋Ｙ側に補助グレーティング（３９Ｙ3，３９Ｙ4）が形成されたキャリブレーションエリアが設けられている。このキャリブレーションエリアを用いて所定のキャリブレーション処理、例えばエンコーダのヘッド（６４ｙ1，６４ｙ2）等を用いたウエハステージの位置計測に関連するキャリブレーション処理を行うことで、そのキャリブレーション処理の後に、エンコーダを用いてウエハステージの所定方向の位置制御を精度良く行うことが可能になる。
PCT/JP2008/001977 2007-07-24 2008-07-24 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法 WO2009013905A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009524399A JP5489068B2 (ja) 2007-07-24 2008-07-24 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法
EP08776874.3A EP2187430B1 (en) 2007-07-24 2008-07-24 Position measuring system, exposure apparatus, position measuring method, exposure method, and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007192671 2007-07-24
JP2007-192671 2007-07-24

Publications (1)

Publication Number Publication Date
WO2009013905A1 true WO2009013905A1 (ja) 2009-01-29

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Application Number Title Priority Date Filing Date
PCT/JP2008/001977 WO2009013905A1 (ja) 2007-07-24 2008-07-24 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法

Country Status (6)

Country Link
US (1) US8243257B2 (ja)
EP (1) EP2187430B1 (ja)
JP (1) JP5489068B2 (ja)
KR (1) KR101546976B1 (ja)
TW (1) TWI534408B (ja)
WO (1) WO2009013905A1 (ja)

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JP2009032750A (ja) * 2007-07-24 2009-02-12 Nikon Corp 露光装置及びデバイス製造方法
JP2009032748A (ja) * 2007-07-24 2009-02-12 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP2015535615A (ja) * 2012-11-12 2015-12-14 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US9298107B2 (en) 2010-07-16 2016-03-29 Asml Netherlands B.V. Lithographic apparatus and method
CN105607429A (zh) * 2009-06-19 2016-05-25 株式会社尼康 曝光设备及器件制造方法
WO2017057539A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
CN114518071A (zh) * 2022-03-29 2022-05-20 南通京阳机械科技有限公司 一种模具加工用手持测量设备

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CN104035287B (zh) * 2013-03-05 2016-03-16 中芯国际集成电路制造(上海)有限公司 曝光装置及其曝光方法
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JP6649636B2 (ja) * 2015-02-23 2020-02-19 株式会社ニコン 計測装置、リソグラフィシステム及び露光装置、並びにデバイス製造方法
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US8243257B2 (en) 2012-08-14
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EP2187430A1 (en) 2010-05-19
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