JP2018200913A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2018200913A JP2018200913A JP2017103502A JP2017103502A JP2018200913A JP 2018200913 A JP2018200913 A JP 2018200913A JP 2017103502 A JP2017103502 A JP 2017103502A JP 2017103502 A JP2017103502 A JP 2017103502A JP 2018200913 A JP2018200913 A JP 2018200913A
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- 230000001681 protective effect Effects 0.000 claims abstract description 284
- 239000007788 liquid Substances 0.000 claims abstract description 63
- 230000002093 peripheral effect Effects 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 230000004048 modification Effects 0.000 description 24
- 238000012986 modification Methods 0.000 description 24
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- 238000000034 method Methods 0.000 description 10
- 238000003754 machining Methods 0.000 description 6
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- 239000003292 glue Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
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- 238000010297 mechanical methods and process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Dicing (AREA)
Abstract
Description
11a 表面
11b 裏面
11c 外周縁
11d デバイス領域
11e 外周余剰領域
11f 溝
11g 円形部
11h 環状部
13 ストリート(ストリート)
15 デバイス
17 バンプ(凹凸)
21 保護フィルム
23 シート(キャリアシート)
25 液状樹脂
27 保護部材
29 シート(離型シート)
31 液体
2 切削装置
4 チャックテーブル(保持テーブル)
4a 保持面
6 切削ユニット
8 スピンドル
10 切削ブレード
12 緩衝材
14 錘
16 減圧チャンバ
16a 箱体
16b 扉体
18 排気管
20 バルブ
22 吸気管
24 バルブ
26 支持テーブル
26a 支持面
26b ガイド部
28 ヒーター
32 保護部材固定装置
34 保持テーブル
34a 凹部
34b 吸気路
36 紫外線光源
38 プレート
40 バルブ
42 吸引源
44 ウェーハ保持ユニット
44a 下面
52 研削装置
54 チャックテーブル(保持テーブル)
54a 保持面
56 研削ユニット
58 スピンドル
60 マウント
62 研削ホイール
64 ホイール基台
66 研削砥石
72 ウェーハ保持ユニット
72a 保持面
74 剥離ユニット
76 ヒーター
82 加圧ユニット(加圧部)
84 緩衝材
92 支持テーブル
92a 支持面
94 ヒーター
96 ローラー
102 支持テーブル
102a 支持面
104 加圧ユニット
106 緩衝材
112 レーザー加工装置
114 チャックテーブル(保持テーブル)
114a 保持面
116 レーザー照射ユニット
116a レーザービーム
Claims (10)
- 凹凸のあるデバイスが形成されたデバイス領域と該デバイス領域を囲む外周余剰領域とを表面に有するウェーハの該表面側に、該ウェーハの仕上がり厚さを超える深さの環状の溝を該外周余剰領域の内周に沿って形成する環状溝形成ステップと、
該ウェーハの該デバイス領域と該溝とを保護フィルムで覆い、該保護フィルムを該凹凸に倣って該表面側に密着させる保護フィルム密着ステップと、
外的刺激によって硬化する硬化型の液状樹脂からなる保護部材で該保護フィルム及び露出している該外周余剰領域を被覆し、該ウェーハの該表面側が該保護部材で覆われた保護部材付きウェーハを形成する保護部材付きウェーハ形成ステップと、
チャックテーブルの保持面で該保護部材付きウェーハの該保護部材側を保持した状態で、該ウェーハの裏面を研削して該ウェーハを該仕上がり厚さまで薄くするとともに、該溝を該裏面側に露出させて、該保護部材で覆われた状態の該ウェーハを該外周余剰領域を含む環状部と該デバイス領域を含む円形部とに分離する研削ステップと、
該円形部の該デバイス領域から該保護部材及び該保護フィルムを剥離して該環状部とともに除去する剥離ステップと、を備えることを特徴とするウェーハの加工方法。 - 該保護フィルム密着ステップでは、該溝に該保護フィルムを押し込んで密着させることを特徴とする請求項1に記載のウェーハの加工方法。
- 該環状溝形成ステップでは、該ウェーハの該表面側を該外周余剰領域の内周に沿って切削ブレードで切削して該溝を形成することを特徴とする請求項1又は請求項2に記載のウェーハの加工方法。
- 該環状溝形成ステップでは、該ウェーハに対して吸収性を有する波長のレーザービームを該外周余剰領域の内周に沿って該ウェーハの該表面側に照射して該溝を形成することを特徴とする請求項1又は請求項2に記載のウェーハの加工方法。
- 該ウェーハの外周縁の該表面側は面取りされており、
該保護部材付きウェーハ形成ステップでは、該面取りされた該外周縁の該表面側の一部を含む該ウェーハの該表面側を覆うように該保護部材を被覆することを特徴とする請求項1から請求項4のいずれかに記載のウェーハの加工方法。 - 該保護部材付きウェーハ形成ステップでは、平坦なシートに塗布された該液状樹脂に該保護フィルムを介して該ウェーハを押し当てた後、該液状樹脂を外的刺激で硬化させて該ウェーハに該液状樹脂からなる該保護部材を固定することを特徴とする請求項1から請求項5のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、減圧下で該保護フィルムを該ウェーハの該表面に押し当てた後、大気圧によって該保護フィルムを該凹凸に倣って密着させることを特徴とする請求項1から請求項6のいずれかに記載のウェーハの加工方法。
- 該保護フィルム貼着ステップでは、該ウェーハの該表面に該保護フィルムを対面させた状態で、該ウェーハの中心部から径方向外側に向かって順に該保護フィルムを該ウェーハの該表面側に押し当て、該保護フィルムを該凹凸に倣って該表面側に密着させることを特徴とする請求項1から請求項7のいずれかに記載のウェーハの加工方法。
- 該保護フィルム貼着ステップでは、該ウェーハの該表面に液体を供給した後に、該液体越しに該保護フィルムを該ウェーハの該表面側に押し当てることを特徴とする請求項1から請求項8のいずれかに記載のウェーハの加工方法。
- 該剥離ステップでは、該保護フィルムと該ウェーハの該表面との間に存在する該液体を加熱して気化させることを特徴とする請求項9に記載のウェーハの加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017103502A JP6914587B2 (ja) | 2017-05-25 | 2017-05-25 | ウェーハの加工方法 |
SG10201803750SA SG10201803750SA (en) | 2017-05-25 | 2018-05-03 | Wafer processing method |
KR1020180054748A KR102450309B1 (ko) | 2017-05-25 | 2018-05-14 | 웨이퍼의 가공 방법 |
DE102018207497.6A DE102018207497A1 (de) | 2017-05-25 | 2018-05-15 | Waferbearbeitungsverfahren |
CN201810460297.8A CN108962738B (zh) | 2017-05-25 | 2018-05-15 | 晶片的加工方法 |
TW107117557A TWI754754B (zh) | 2017-05-25 | 2018-05-23 | 晶圓加工方法 |
US15/987,051 US10854462B2 (en) | 2017-05-25 | 2018-05-23 | Wafer processing method |
Applications Claiming Priority (1)
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JP2017103502A JP6914587B2 (ja) | 2017-05-25 | 2017-05-25 | ウェーハの加工方法 |
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JP2018200913A true JP2018200913A (ja) | 2018-12-20 |
JP6914587B2 JP6914587B2 (ja) | 2021-08-04 |
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US (1) | US10854462B2 (ja) |
JP (1) | JP6914587B2 (ja) |
KR (1) | KR102450309B1 (ja) |
CN (1) | CN108962738B (ja) |
DE (1) | DE102018207497A1 (ja) |
SG (1) | SG10201803750SA (ja) |
TW (1) | TWI754754B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021027239A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | 保護部材形成方法及び保護部材形成装置 |
JP7430111B2 (ja) | 2020-05-08 | 2024-02-09 | 株式会社ディスコ | 加工方法 |
Families Citing this family (3)
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JP7214455B2 (ja) | 2018-12-07 | 2023-01-30 | 株式会社ディスコ | 保護部材形成装置 |
JP7418184B2 (ja) * | 2019-11-14 | 2024-01-19 | 株式会社ディスコ | 保護部材の設置方法、被加工物の加工方法及び保護部材の製造方法 |
JP2022032667A (ja) * | 2020-08-13 | 2022-02-25 | 株式会社ディスコ | ウェーハの加工方法 |
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JPS5799736A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Fabrication of semiconductor substrate |
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SG10201803750SA (en) | 2018-12-28 |
TW201901789A (zh) | 2019-01-01 |
TWI754754B (zh) | 2022-02-11 |
US20180342398A1 (en) | 2018-11-29 |
KR102450309B1 (ko) | 2022-09-30 |
CN108962738B (zh) | 2024-02-02 |
CN108962738A (zh) | 2018-12-07 |
JP6914587B2 (ja) | 2021-08-04 |
KR20180129643A (ko) | 2018-12-05 |
US10854462B2 (en) | 2020-12-01 |
DE102018207497A1 (de) | 2018-11-29 |
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