JP2014154609A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014154609A JP2014154609A JP2013020944A JP2013020944A JP2014154609A JP 2014154609 A JP2014154609 A JP 2014154609A JP 2013020944 A JP2013020944 A JP 2013020944A JP 2013020944 A JP2013020944 A JP 2013020944A JP 2014154609 A JP2014154609 A JP 2014154609A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
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- 238000000034 method Methods 0.000 description 10
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- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】実施形態の半導体装置は、第1導電型のドレイン層と、前記ドレイン層上に設けられた第1導電型のドリフト層と、前記ドリフト層上に設けられた第2導電型のベース層と、前記ベース層の表面に選択的に設けられた第1導電型のソース層と、前記ソース層上にゲート絶縁膜を介して設けられたゲート電極とを有する素子部と、前記ベース層と前記ソース層に電気的に接続されたソース電極と、前記ドレイン層に電気的に接続されたドレイン電極と、前記素子部を囲む終端部に設けられ、角部における内部側壁の曲率は外部側壁の曲率よりも大きくなるように設けられた終端トレンチと、前記終端トレンチ内に設けられた終端絶縁膜と、を有する。
【選択図】図1
Description
(半導体装置1aの構造)
図1及び図2を用いて、本発明の第1の実施形態に係る半導体装置1aを説明する。図1は第1の実施形態に係る半導体装置1aの平面図、図2は第1の実施形態に係る半導体装置1aの要部断面図を示している。なお、図1においては、p型ベース層12、n型ソース層13、ゲート絶縁膜15、ゲート電極16、及びソース電極18を省略した平面図を示している。
半導体装置1aの動作について説明する。
次に、第1の実施形態の半導体装置1aの製造方法について説明する。図3A〜Cは第1の実施形態に係る半導体装置1aの製造プロセス毎について断面構造を示す断面図を示している。
第1の実施形態の半導体装置1aの効果について、比較例を参照して説明する。図4は、比較例に係る半導体装置1bの要部断面図を示している。
以下に、図5を用いて第2の実施形態に係る半導体装置1cについて説明する。なお、第2の実施形態について、第1の実施形態と同様の点については説明を省略し、異なる点について説明する。
図5は、第2の実施形態に係る半導体装置1cの要部断面図を示している。第2の実施形態に係る半導体装置1cと、第1の実施形態に係る半導体装置1aとが異なる点は、終端トレンチ19とポリイミド層20との間に酸化膜21が設けられている点である。すなわち、ポリイミド層20は酸化膜21を介して終端トレンチ19内に設けられている。
次に、第2の実施形態の半導体装置1cの製造方法について説明する。
半導体装置1cの効果について説明する。
以下に、図6を用いて第2の実施形態に係る半導体装置1dについて説明する。なお、第3の実施形態について、第1の実施形態と同様の点については説明を省略し、異なる点について説明する。
図6は、第3の実施形態に係る半導体装置1dの要部断面図を示している。第3の実施形態に係る半導体装置1dと、第1の実施形態に係る半導体装置1aとが異なる点は、終端トレンチ19の底部がドレイン電極17に達するように設けられている点である。すなわち、終端トレンチ19(ポリイミド層20)はn型ドリフト層11及びn+型ドレイン層10を貫通している。
半導体装置1dの効果について説明する。
Claims (5)
- 第1導電型のドレイン層と、前記ドレイン層上に設けられた第1導電型のドリフト層と、前記ドリフト層上に設けられた第2導電型のベース層と、前記ベース層の表面に選択的に設けられた第1導電型のソース層と、前記ソース層上にゲート絶縁膜を介して設けられたゲート電極とを有する素子部と、
前記ベース層と前記ソース層に電気的に接続されたソース電極と、
前記ドレイン層に電気的に接続されたドレイン電極と、
前記素子部を囲む終端部に設けられ、角部における内部側壁の曲率は外部側壁の曲率よりも大きくなるように、前記ドリフト層の表面から前記ドレイン電極方向に設けられた終端トレンチと、
前記終端トレンチ内に設けられた終端絶縁膜と、
を有する半導体装置。 - 前記終端絶縁膜が酸化膜を介して前記終端トレンチ内に設けられた請求項1に記載の半導体装置。
- 前記ベース層に接続され、前記ドリフト層の表面と平行な方向において前記ドリフト層と交互に延在するピラー層をさらに有し、前記終端トレンチの底部が前記ピラー層の底部よりも前記ドレイン電極側に位置する請求項1または2に記載の半導体装置。
- 前記終端トレンチの底部が前記ドレイン電極に達する請求項1乃至3のいずれか一に記載の半導体装置。
- 前記終端トレンチの側面に接する前記ベース層をさらに有する請求項1乃至4のいずれか一に記載の半導体装置。
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JP2013020944A JP2014154609A (ja) | 2013-02-05 | 2013-02-05 | 半導体装置 |
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JP2013020944A JP2014154609A (ja) | 2013-02-05 | 2013-02-05 | 半導体装置 |
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JP2014154609A true JP2014154609A (ja) | 2014-08-25 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019165111A (ja) * | 2018-03-20 | 2019-09-26 | 三菱電機株式会社 | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332588A (ja) * | 2002-05-09 | 2003-11-21 | Nippon Inter Electronics Corp | 半導体素子 |
JP2006041123A (ja) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | 半導体装置 |
JP2007129086A (ja) * | 2005-11-04 | 2007-05-24 | Toshiba Corp | 半導体装置 |
JP2008166705A (ja) * | 2006-12-06 | 2008-07-17 | Denso Corp | 半導体装置およびその製造方法 |
JP2011124325A (ja) * | 2009-12-09 | 2011-06-23 | Renesas Electronics Corp | 半導体装置、及びその製造方法 |
-
2013
- 2013-02-05 JP JP2013020944A patent/JP2014154609A/ja not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332588A (ja) * | 2002-05-09 | 2003-11-21 | Nippon Inter Electronics Corp | 半導体素子 |
JP2006041123A (ja) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | 半導体装置 |
JP2007129086A (ja) * | 2005-11-04 | 2007-05-24 | Toshiba Corp | 半導体装置 |
JP2008166705A (ja) * | 2006-12-06 | 2008-07-17 | Denso Corp | 半導体装置およびその製造方法 |
JP2011124325A (ja) * | 2009-12-09 | 2011-06-23 | Renesas Electronics Corp | 半導体装置、及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019165111A (ja) * | 2018-03-20 | 2019-09-26 | 三菱電機株式会社 | 半導体装置 |
JP6999233B2 (ja) | 2018-03-20 | 2022-01-18 | 三菱電機株式会社 | 半導体装置 |
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