JP2014146666A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 description 16
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- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- 238000001020 plasma etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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Abstract
【解決手段】実施形態の半導体装置は、第1導電型のドリフト層と、前記ドリフト層上に設けられた第2導電型のベース層と、前記ベース層に設けられた第1導電型のソース層と、複数のトレンチと、前記ソース層に隣接し、第1絶縁膜を介して前記トレンチ内に設けられたゲート電極と、前記トレンチ内において、前記ゲート電極の下に、前記第1絶縁膜よりも高い誘電率を有する第2絶縁膜を介して設けられたフィールドプレート電極とを有する。
【選択図】図1
Description
(半導体装置1aの構造)
図1を用いて、本発明の第1の実施形態に係る半導体装置1aを説明する。図1は、第1の実施形態に係る半導体装置1aの要部断面図を示している。
半導体装置1aの動作について説明する。
次に、第1の実施形態の半導体装置1aの製造方法について説明する。図2A〜図2Cは第1の実施形態に係る半導体装置1aの製造プロセス毎を示す要部断面図を示している。
第1の実施形態の半導体装置1aの効果について、比較例を参照して説明する。図3は、比較例に係る半導体装置1bの要部断面図を示している。
以下に、図4を用いて第2の実施形態に係る半導体装置1cについて説明する。なお、第2の実施形態について、第1の実施形態と同様の点については説明を省略し、異なる点について説明する。
図4は、第2の実施形態に係る半導体装置1cの要部断面図を示している。第2の実施形態に係る半導体装置1cと、第1の実施形態に係る半導体装置1aとが異なる点は、第2絶縁膜19が第1絶縁膜18に囲まれて形成されている点である。すなわち、第2絶縁膜19はフローティングされて設けられている。
次に、第1の実施形態の半導体装置1aの製造方法について説明する。図5A〜図5Cは第2の実施形態に係る半導体装置1cの製造プロセス毎を示す要部断面図を示している。
第2の実施形態の半導体装置1cの効果について説明する。
Claims (4)
- 第1導電型のドレイン層と、
前記ドレイン層上に設けられた第1導電型のドリフト層と、
前記ドリフト層上に設けられた第2導電型のベース層と、
前記ベース層の表面に選択的に設けられた第1導電型のソース層と、
前記ソース層の表面から前記ドリフト層まで達するように設けられた複数のトレンチと、
前記ベース層に隣接し、第1絶縁膜を介して前記トレンチ内に設けられたゲート電極と、
前記トレンチ内において、前記ゲート電極の下に、前記第1絶縁膜よりも高い誘電率を有する第2絶縁膜を介して設けられたフィールドプレート電極と、
前記ドレイン層に接続されたドレイン電極と、
前記ベース層及び前記ソース層に接続されたソース電極と、
を有する半導体装置。 - 前記第2絶縁膜は前記フィールドプレート電極の側面に位置する前記トレンチ内に設けられた請求項1に記載の半導体装置。
- 前記第2絶縁膜は前記第1絶縁膜に囲まれた請求項1または2に記載の半導体装置。
- 前記フィールドプレート電極の側面に位置する前記第2絶縁膜の厚さは、前記ゲート電極と前記ソース電極との間の前記第1絶縁膜の厚さよりも厚い請求項1乃至3のいずれか1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2013013703A JP2014146666A (ja) | 2013-01-28 | 2013-01-28 | 半導体装置 |
CN201310222581.9A CN103972287A (zh) | 2013-01-28 | 2013-06-06 | 半导体装置 |
US13/928,009 US20140209999A1 (en) | 2013-01-28 | 2013-06-26 | Semiconductor device |
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JP2013013703A JP2014146666A (ja) | 2013-01-28 | 2013-01-28 | 半導体装置 |
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JP2013013703A Pending JP2014146666A (ja) | 2013-01-28 | 2013-01-28 | 半導体装置 |
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US (1) | US20140209999A1 (ja) |
JP (1) | JP2014146666A (ja) |
CN (1) | CN103972287A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016152058A1 (ja) * | 2015-03-24 | 2016-09-29 | 株式会社デンソー | 半導体装置 |
CN113410282A (zh) * | 2020-03-17 | 2021-09-17 | 株式会社东芝 | 半导体装置 |
JP2021150322A (ja) * | 2020-03-16 | 2021-09-27 | 株式会社東芝 | 半導体装置 |
CN113690299A (zh) * | 2020-05-18 | 2021-11-23 | 华润微电子(重庆)有限公司 | 沟槽栅vdmos器件及其制备方法 |
Families Citing this family (14)
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JP2015056486A (ja) | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
DE102014109924B3 (de) * | 2014-07-15 | 2015-11-12 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit Feldelektrode und Felddielektrikum und Verfahren zur Herstellung und elektronische Anordnung |
US9653462B2 (en) * | 2014-12-26 | 2017-05-16 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2016181617A (ja) * | 2015-03-24 | 2016-10-13 | 株式会社デンソー | 半導体装置 |
JP6426642B2 (ja) * | 2016-03-08 | 2018-11-21 | 株式会社東芝 | 半導体装置 |
CN105789291B (zh) * | 2016-04-26 | 2018-06-19 | 电子科技大学 | 一种双***沟槽栅电荷存储型igbt及其制造方法 |
CN105742346B (zh) * | 2016-04-26 | 2018-06-01 | 电子科技大学 | 双***沟槽栅电荷存储型rc-igbt及其制造方法 |
CN105870180B (zh) * | 2016-04-26 | 2018-08-24 | 电子科技大学 | 双***沟槽栅电荷存储型rc-igbt及其制造方法 |
CN107665918A (zh) * | 2016-07-31 | 2018-02-06 | 朱江 | 一种半导体装置 |
CN107170827B (zh) * | 2017-06-08 | 2020-05-26 | 电子科技大学 | 一种限定雪崩击穿点的屏蔽栅vdmos器件 |
US10361276B1 (en) * | 2018-03-17 | 2019-07-23 | Littelfuse, Inc. | Embedded field plate field effect transistor |
JP7381335B2 (ja) * | 2019-12-26 | 2023-11-15 | 株式会社東芝 | 半導体装置 |
CN116525672A (zh) * | 2022-01-24 | 2023-08-01 | 华为技术有限公司 | 半导体器件及其制作方法、电子设备 |
US20230253468A1 (en) * | 2022-02-09 | 2023-08-10 | Semiconductor Components Industries, Llc | Shielded gate trench power mosfet with high-k shield dielectric |
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JP2012059841A (ja) * | 2010-09-07 | 2012-03-22 | Toshiba Corp | 半導体装置 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
US20120319132A1 (en) * | 2011-06-16 | 2012-12-20 | Alpha And Omega Semiconductor Incorporated | Split-gate structure in trench-based silicon carbide power device |
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US8572113B2 (en) * | 2010-09-02 | 2013-10-29 | Gryphon Networks Corp. | Network calling privacy with recording |
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2013
- 2013-01-28 JP JP2013013703A patent/JP2014146666A/ja active Pending
- 2013-06-06 CN CN201310222581.9A patent/CN103972287A/zh active Pending
- 2013-06-26 US US13/928,009 patent/US20140209999A1/en not_active Abandoned
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JP2012059841A (ja) * | 2010-09-07 | 2012-03-22 | Toshiba Corp | 半導体装置 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
US20120319132A1 (en) * | 2011-06-16 | 2012-12-20 | Alpha And Omega Semiconductor Incorporated | Split-gate structure in trench-based silicon carbide power device |
Cited By (12)
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WO2016152058A1 (ja) * | 2015-03-24 | 2016-09-29 | 株式会社デンソー | 半導体装置 |
JP2016181618A (ja) * | 2015-03-24 | 2016-10-13 | 株式会社デンソー | 半導体装置 |
US10128344B2 (en) | 2015-03-24 | 2018-11-13 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP2021150322A (ja) * | 2020-03-16 | 2021-09-27 | 株式会社東芝 | 半導体装置 |
JP7256770B2 (ja) | 2020-03-16 | 2023-04-12 | 株式会社東芝 | 半導体装置 |
CN113410282A (zh) * | 2020-03-17 | 2021-09-17 | 株式会社东芝 | 半导体装置 |
JP2021150401A (ja) * | 2020-03-17 | 2021-09-27 | 株式会社東芝 | 半導体装置 |
US11282929B2 (en) | 2020-03-17 | 2022-03-22 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP7317752B2 (ja) | 2020-03-17 | 2023-07-31 | 株式会社東芝 | 半導体装置 |
US11769805B2 (en) | 2020-03-17 | 2023-09-26 | Kabushiki Kaisha Toshiba | Semiconductor device with field plate electrode |
CN113690299A (zh) * | 2020-05-18 | 2021-11-23 | 华润微电子(重庆)有限公司 | 沟槽栅vdmos器件及其制备方法 |
CN113690299B (zh) * | 2020-05-18 | 2024-02-09 | 华润微电子(重庆)有限公司 | 沟槽栅vdmos器件及其制备方法 |
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