JP2009530214A - カーボン単層ナノチューブの成長のための触媒 - Google Patents
カーボン単層ナノチューブの成長のための触媒 Download PDFInfo
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- JP2009530214A JP2009530214A JP2008553316A JP2008553316A JP2009530214A JP 2009530214 A JP2009530214 A JP 2009530214A JP 2008553316 A JP2008553316 A JP 2008553316A JP 2008553316 A JP2008553316 A JP 2008553316A JP 2009530214 A JP2009530214 A JP 2009530214A
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- metal
- precursor gas
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Images
Classifications
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/28—Molybdenum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/44—Palladium
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0201—Impregnation
- B01J37/0211—Impregnation using a colloidal suspension
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/343—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation of ultrasonic wave energy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/18—Carbon
- B01J21/185—Carbon nanotubes
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- C—CHEMISTRY; METALLURGY
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- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
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- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
Abstract
【選択図】図1
Description
本発明の他の態様において、前記炭素前駆体ガスは、メタンであり、不活性ガス及び水素をさらに含み、前記不活性ガスは、アルゴン、ヘリウム、窒素、水素、又はこれらの組み合わせである。前記触媒は、鉄、モリブデン、又はこれらの組み合わせであり、1nmから10nmの間の粒径を有する。前記担体は、粉末状酸化物であり、Al2O3、SiO3、MgO及びゼロライトからなるグループから選択される。そして、前記触媒と前記担体とは、約1:1から約1:50の比率である。また、前記炭素前駆体ガスは、触媒1mgに対して約0.2sccmから約0.8sccmの割合で接触する。さらに、前記温度は、前記共融点よりも約5℃から約150℃高い。
式
ここでTdecompは、炭化水素の熱分解温度であり、SWNTsの成長に適した触媒の特徴と合成パラメーターの間の関係について説明されている。
Claims (20)
- 単層カーボンナノチューブ(SWNT)を生成するための化学気相成長法であって、
触媒の共融点近くの温度で炭素前駆体ガスを担体上の触媒と接触させ、前記炭素前駆体ガスが、当該炭素前駆体ガスが反応する割合と等しい割合で接触することにより、長いSWNTが形成される
ことを特徴とする方法。 - 前記炭素前駆体ガスは、メタンであることを特徴とする請求項1に記載の方法。
- 前記炭素前駆体ガスは、不活性ガス及び水素をさらに含むことを特徴とする請求項2に記載の方法。
- 前記不活性ガスは、アルゴン、ヘリウム、窒素、水素、又はこれらの組み合わせであることを特徴とする請求項3に記載の方法。
- 前記触媒は、鉄、モリブデン、又はこれらの組み合わせであることを特徴とする請求項1に記載の方法。
- 前記触媒は、1nmから10nmの間の粒径を有することを特徴とする請求項1に記載の方法。
- 前記触媒は、約5nmの粒径を有することを特徴とする請求項6に記載の方法。
- 前記触媒は、約3nmの粒径を有することを特徴とする請求項6に記載の方法。
- 前記触媒は、約1nmの粒径を有することを特徴とする請求項6に記載の方法。
- 前記担体は、粉末状酸化物であることを特徴とする請求項1に記載の方法。
- 前記粉末状酸化物は、Al2O3、SiO3、MgO及びゼロライトからなるグループから選択されることを特徴とする請求項10に記載の方法。
- 前記粉末状酸化物は、Al2O3であることを特徴とする請求項11に記載の方法。
- 前記触媒と前記担体とは、約1:1から約1:50の比率であることを特徴とする請求項1に記載の方法。
- 前記炭素前駆体ガスは、触媒1mgに対して約0.2sccmから約0.8sccmの割合で接触することを特徴とする請求項13に記載の方法。
- 前記炭素前駆体ガスは、触媒1mgに対して約0.2sccmから約0.4sccmの割合で接触することを特徴とする請求項14に記載の方法。
- 前記炭素前駆体ガスは、触媒1mgに対して約0.3sccmの割合で接触することを特徴とする請求項15に記載の方法。
- 前記温度は、前記共融点よりも約5℃から約150℃高いことを特徴とする請求項1に記載の方法。
- 前記温度は、前記共融点よりも約10℃から約100℃高いことを特徴とする請求項17に記載の方法。
- 前記温度は、前記共融点よりも約50℃高いことを特徴とする請求項18に記載の方法。
- 前記温度は、前記共融点よりも約80℃高いことを特徴とする請求項18に記載の方法。
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