JP2009114054A - 酸素濃度特性が改善した半導体単結晶の製造方法 - Google Patents
酸素濃度特性が改善した半導体単結晶の製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 70
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000001301 oxygen Substances 0.000 title claims abstract description 58
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 230000001965 increasing effect Effects 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000155 melt Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】石英るつぼに収容された半導体メルト(melt)にシード(seed)を浸した後、前記石英るつぼを回転させるとともに水平強磁場を印加しながら引き上げ、固液界面を通じて半導体単結晶を成長させるチョクラルスキー(Cz)法を用いた半導体単結晶の製造方法であって、前記石英るつぼを0.6〜1.5rpmの速度で回転させながら引き上げる。
【選択図】図5
Description
10:石英るつぼ
20:るつぼ支持台
30:るつぼ回転手段
40:ヒーター
50:断熱手段
60:単結晶引上げ手段
70:熱シールド構造物
80:コイルアセンブリー
SM:シリコンメルト
Claims (5)
- 石英るつぼに収容された半導体メルト(melt)にシード(seed)を浸した後、前記石英るつぼを回転させるとともに水平強磁場を印加しながら引き上げ、固液界面を通じて半導体単結晶を成長させるチョクラルスキー(Cz)法を用いた半導体単結晶の製造方法において、
前記石英るつぼを0.6〜1.5rpmの速度で回転させながら引き上げることを特徴とする半導体単結晶の製造方法。 - 前記半導体単結晶のボディ前半部の成長時、前記石英るつぼを0.6〜0.8rpmの速度で回転させることを特徴とする請求項1に記載の半導体単結晶の製造方法。
- 単結晶の成長長さごとの酸素濃度の変動幅を最小化するために、前記石英るつぼの回転速度を漸次増加させることを特徴とする請求項1または請求項2に記載の半導体単結晶の製造方法。
- 前記水平強磁場を2000G以上に印加することを特徴とする請求項1または請求項2に記載の半導体単結晶の製造方法。
- 前記水平強磁場を2500G以上3500G以下に印加することを特徴とする請求項1または請求項2に記載の半導体単結晶の製造方法。
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KR1020070111339A KR100906284B1 (ko) | 2007-11-02 | 2007-11-02 | 산소농도 특성이 개선된 반도체 단결정의 제조방법 |
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US (1) | US8114216B2 (ja) |
EP (1) | EP2055812B1 (ja) |
JP (1) | JP2009114054A (ja) |
KR (1) | KR100906284B1 (ja) |
CN (1) | CN101423976B (ja) |
Cited By (1)
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KR101881380B1 (ko) * | 2017-02-06 | 2018-07-24 | 에스케이실트론 주식회사 | 단결정 잉곳 성장 방법 |
Families Citing this family (10)
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JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102009024473B4 (de) * | 2009-06-10 | 2015-11-26 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium und danach hergestellter Einkristall |
CN102011178B (zh) * | 2010-12-30 | 2012-10-03 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
JP5823947B2 (ja) * | 2012-12-27 | 2015-11-25 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN105350070A (zh) * | 2015-12-09 | 2016-02-24 | 天津市环欧半导体材料技术有限公司 | 一种利用变频磁场控制直拉法硅单晶氧含量的方法 |
DE102015226399A1 (de) * | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
CN106498494A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种mems器件制作用硅单晶材料的热场和制备方法 |
JP6950581B2 (ja) * | 2018-02-28 | 2021-10-13 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置 |
KR102381325B1 (ko) * | 2020-05-18 | 2022-03-31 | 주식회사 영도글로발 | 단결정 잉곳 성장장치의 저산소 단결정 성장을 위한 열차폐 장치 |
CN112359412A (zh) * | 2020-11-03 | 2021-02-12 | 上海新昇半导体科技有限公司 | 一种用于晶体生长的引晶方法 |
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CN101423976A (zh) | 2009-05-06 |
EP2055812B1 (en) | 2016-04-13 |
CN101423976B (zh) | 2012-11-07 |
EP2055812A1 (en) | 2009-05-06 |
US20090114147A1 (en) | 2009-05-07 |
KR20090045494A (ko) | 2009-05-08 |
US8114216B2 (en) | 2012-02-14 |
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