KR20090045494A - 산소농도 특성이 개선된 반도체 단결정의 제조방법 - Google Patents
산소농도 특성이 개선된 반도체 단결정의 제조방법 Download PDFInfo
- Publication number
- KR20090045494A KR20090045494A KR1020070111339A KR20070111339A KR20090045494A KR 20090045494 A KR20090045494 A KR 20090045494A KR 1020070111339 A KR1020070111339 A KR 1020070111339A KR 20070111339 A KR20070111339 A KR 20070111339A KR 20090045494 A KR20090045494 A KR 20090045494A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- crucible
- oxygen concentration
- quartz crucible
- semiconductor
- Prior art date
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- 239000001301 oxygen Substances 0.000 title claims abstract description 57
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000002109 crystal growth method Methods 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 239000010453 quartz Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 230000005291 magnetic effect Effects 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000155 melt Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
- 석영 도가니에 수용된 반도체 멜트(melt)에 시드(seed)를 담근 후 상기 석영 도가니를 회전시킴과 아울러 수평강자장을 인가하면서 인상시켜 고액계면을 통해 반도체 단결정을 성장시키는 쵸크랄스키(Cz)법을 이용한 반도체 단결정 제조 방법에 있어서,상기 석영 도가니를 0.6~1.5rpm의 속도로 회전시키면서 인상을 진행하는 것을 특징으로 하는 반도체 단결정 제조 방법.
- 제1항에 있어서,상기 반도체 단결정의 바디 초반부 성장시에는 상기 석영 도가니를 0.6~0.8rpm의 속도로 회전시키는 것을 특징으로 하는 반도체 단결정 제조 방법.
- 제1항 또는 제2항에 있어서,단결정 성장 길이별로 산소농도 변동폭을 최소화하기 위하여 상기 석영 도가니의 회전속도를 점차적으로 증가시키는 것을 특징으로 하는 반도체 단결정 제조 방법.
- 제1항 또는 제2항에 있어서,상기 수평강자장을 2000G 이상으로 인가하는 것을 특징으로 하는 반도체 단 결정 제조 방법.
- 제1항 또는 제2항에 있어서,상기 수평강자장을 2500G 이상, 3500G 이하로 인가하는 것을 특징으로 하는 반도체 단결정 제조 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070111339A KR100906284B1 (ko) | 2007-11-02 | 2007-11-02 | 산소농도 특성이 개선된 반도체 단결정의 제조방법 |
JP2008273496A JP2009114054A (ja) | 2007-11-02 | 2008-10-23 | 酸素濃度特性が改善した半導体単結晶の製造方法 |
EP08018849.3A EP2055812B1 (en) | 2007-11-02 | 2008-10-28 | Semiconductor silicon single crystal growth method having improvement in oxygen concentration characteristics |
US12/263,000 US8114216B2 (en) | 2007-11-02 | 2008-10-31 | Semiconductor single crystal growth method having improvement in oxygen concentration characteristics |
CN2008101755338A CN101423976B (zh) | 2007-11-02 | 2008-11-03 | 具有氧浓度特性改进的半导体单晶生长方法 |
Applications Claiming Priority (1)
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KR1020070111339A KR100906284B1 (ko) | 2007-11-02 | 2007-11-02 | 산소농도 특성이 개선된 반도체 단결정의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090045494A true KR20090045494A (ko) | 2009-05-08 |
KR100906284B1 KR100906284B1 (ko) | 2009-07-06 |
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KR1020070111339A KR100906284B1 (ko) | 2007-11-02 | 2007-11-02 | 산소농도 특성이 개선된 반도체 단결정의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8114216B2 (ko) |
EP (1) | EP2055812B1 (ko) |
JP (1) | JP2009114054A (ko) |
KR (1) | KR100906284B1 (ko) |
CN (1) | CN101423976B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102009024473B4 (de) * | 2009-06-10 | 2015-11-26 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium und danach hergestellter Einkristall |
CN102011178B (zh) * | 2010-12-30 | 2012-10-03 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
JP5823947B2 (ja) * | 2012-12-27 | 2015-11-25 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN105350070A (zh) * | 2015-12-09 | 2016-02-24 | 天津市环欧半导体材料技术有限公司 | 一种利用变频磁场控制直拉法硅单晶氧含量的方法 |
DE102015226399A1 (de) | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
CN106498494A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种mems器件制作用硅单晶材料的热场和制备方法 |
KR101881380B1 (ko) * | 2017-02-06 | 2018-07-24 | 에스케이실트론 주식회사 | 단결정 잉곳 성장 방법 |
JP6950581B2 (ja) * | 2018-02-28 | 2021-10-13 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置 |
KR102381325B1 (ko) * | 2020-05-18 | 2022-03-31 | 주식회사 영도글로발 | 단결정 잉곳 성장장치의 저산소 단결정 성장을 위한 열차폐 장치 |
CN112359412A (zh) * | 2020-11-03 | 2021-02-12 | 上海新昇半导体科技有限公司 | 一种用于晶体生长的引晶方法 |
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JP2767074B2 (ja) * | 1990-07-13 | 1998-06-18 | 信越半導体 株式会社 | シリコン単結晶の引上方法 |
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2007
- 2007-11-02 KR KR1020070111339A patent/KR100906284B1/ko active IP Right Grant
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2008
- 2008-10-23 JP JP2008273496A patent/JP2009114054A/ja active Pending
- 2008-10-28 EP EP08018849.3A patent/EP2055812B1/en active Active
- 2008-10-31 US US12/263,000 patent/US8114216B2/en active Active
- 2008-11-03 CN CN2008101755338A patent/CN101423976B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2055812A1 (en) | 2009-05-06 |
US20090114147A1 (en) | 2009-05-07 |
US8114216B2 (en) | 2012-02-14 |
JP2009114054A (ja) | 2009-05-28 |
CN101423976A (zh) | 2009-05-06 |
CN101423976B (zh) | 2012-11-07 |
KR100906284B1 (ko) | 2009-07-06 |
EP2055812B1 (en) | 2016-04-13 |
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