FR2816109B1 - Circuit integre a transistor a grille isolee et procede de fabrication - Google Patents
Circuit integre a transistor a grille isolee et procede de fabricationInfo
- Publication number
- FR2816109B1 FR2816109B1 FR0106930A FR0106930A FR2816109B1 FR 2816109 B1 FR2816109 B1 FR 2816109B1 FR 0106930 A FR0106930 A FR 0106930A FR 0106930 A FR0106930 A FR 0106930A FR 2816109 B1 FR2816109 B1 FR 2816109B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- integrated circuit
- grid transistor
- insulated grid
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000332246A JP2002141420A (ja) | 2000-10-31 | 2000-10-31 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2816109A1 FR2816109A1 (fr) | 2002-05-03 |
| FR2816109B1 true FR2816109B1 (fr) | 2004-08-20 |
Family
ID=18808477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0106930A Expired - Fee Related FR2816109B1 (fr) | 2000-10-31 | 2001-05-28 | Circuit integre a transistor a grille isolee et procede de fabrication |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6512258B2 (fr) |
| JP (1) | JP2002141420A (fr) |
| KR (1) | KR100495589B1 (fr) |
| DE (1) | DE10124413A1 (fr) |
| FR (1) | FR2816109B1 (fr) |
| TW (1) | TW548831B (fr) |
Families Citing this family (128)
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| US7447754B2 (en) * | 2000-12-06 | 2008-11-04 | Microsoft Corporation | Methods and systems for processing multi-media editing projects |
| JP2002231819A (ja) * | 2001-01-30 | 2002-08-16 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
| JP3719189B2 (ja) * | 2001-10-18 | 2005-11-24 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP2003197765A (ja) * | 2001-12-28 | 2003-07-11 | Texas Instr Japan Ltd | 半導体装置およびその製造方法 |
| DE10209334A1 (de) * | 2002-03-02 | 2003-10-09 | Infineon Technologies Ag | Füllverfahren für Mulden auf einer Halbleiterscheibe |
| KR100488835B1 (ko) * | 2002-04-04 | 2005-05-11 | 산요덴키가부시키가이샤 | 반도체 장치 및 표시 장치 |
| KR100447433B1 (ko) * | 2002-07-18 | 2004-09-07 | 주식회사 하이닉스반도체 | 이중 접합영역 형성방법 및 이를 이용한 전송 트랜지스터형성방법 |
| WO2004017418A1 (fr) * | 2002-08-15 | 2004-02-26 | Renesas Technology Corp. | Dispositif a circuit integre a semiconducteurs et procede de fabrication |
| JP2004241755A (ja) * | 2003-01-15 | 2004-08-26 | Renesas Technology Corp | 半導体装置 |
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| US20040256692A1 (en) * | 2003-06-19 | 2004-12-23 | Keith Edmund Kunz | Composite analog power transistor and method for making the same |
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| CA2894717A1 (fr) | 2015-06-19 | 2016-12-19 | Ignis Innovation Inc. | Caracterisation d'un dispositif optoelectronique au moyen d'une ligne de sens partage |
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| CA2879462A1 (fr) | 2015-01-23 | 2016-07-23 | Ignis Innovation Inc. | Compensation de la variation de couleur dans les dispositifs emetteurs |
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| CA2898282A1 (fr) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Etalonnage hybride de sources de courant destine a des afficheurs a tension polarisee par courant programmes |
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| JP2982895B2 (ja) * | 1997-02-06 | 1999-11-29 | 日本電気株式会社 | Ｃｍｏｓ半導体装置およびその製造方法 |
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| US5991204A (en) * | 1998-04-15 | 1999-11-23 | Chang; Ming-Bing | Flash eeprom device employing polysilicon sidewall spacer as an erase gate |
| EP1014441B1 (fr) * | 1998-12-22 | 2009-08-05 | STMicroelectronics S.r.l. | Procédé de fabrication d'EEPROM avec la périphérie |
| US6277683B1 (en) * | 2000-02-28 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer |
| US6316304B1 (en) * | 2000-07-12 | 2001-11-13 | Chartered Semiconductor Manufacturing Ltd. | Method of forming spacers of multiple widths |
-
2000
- 2000-10-31 JP JP2000332246A patent/JP2002141420A/ja active Pending
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2001
- 2001-04-12 US US09/832,889 patent/US6512258B2/en not_active Expired - Fee Related
- 2001-05-18 DE DE10124413A patent/DE10124413A1/de not_active Ceased
- 2001-05-28 FR FR0106930A patent/FR2816109B1/fr not_active Expired - Fee Related
- 2001-07-02 TW TW090116104A patent/TW548831B/zh not_active IP Right Cessation
- 2001-07-05 KR KR10-2001-0039991A patent/KR100495589B1/ko not_active IP Right Cessation
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| US20020052086A1 (en) | 2002-05-02 |
| US20030094636A1 (en) | 2003-05-22 |
| KR100495589B1 (ko) | 2005-06-16 |
| DE10124413A1 (de) | 2002-05-16 |
| US6777283B2 (en) | 2004-08-17 |
| US6512258B2 (en) | 2003-01-28 |
| JP2002141420A (ja) | 2002-05-17 |
| KR20020033493A (ko) | 2002-05-07 |
| FR2816109A1 (fr) | 2002-05-03 |
| TW548831B (en) | 2003-08-21 |
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