FR2808921B1 - Dispositif a semiconducteur ayant une structure a triple caisson et procede de fabrication - Google Patents
Dispositif a semiconducteur ayant une structure a triple caisson et procede de fabricationInfo
- Publication number
- FR2808921B1 FR2808921B1 FR0104561A FR0104561A FR2808921B1 FR 2808921 B1 FR2808921 B1 FR 2808921B1 FR 0104561 A FR0104561 A FR 0104561A FR 0104561 A FR0104561 A FR 0104561A FR 2808921 B1 FR2808921 B1 FR 2808921B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- box structure
- triple box
- triple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000103083A JP2001291779A (ja) | 2000-04-05 | 2000-04-05 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2808921A1 FR2808921A1 (fr) | 2001-11-16 |
FR2808921B1 true FR2808921B1 (fr) | 2004-09-10 |
Family
ID=18616850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0104561A Expired - Fee Related FR2808921B1 (fr) | 2000-04-05 | 2001-04-04 | Dispositif a semiconducteur ayant une structure a triple caisson et procede de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US6388295B1 (fr) |
JP (1) | JP2001291779A (fr) |
KR (1) | KR100362904B1 (fr) |
DE (1) | DE10116800A1 (fr) |
FR (1) | FR2808921B1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158204A (ja) * | 2001-11-22 | 2003-05-30 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JP2004311684A (ja) * | 2003-04-07 | 2004-11-04 | Sanyo Electric Co Ltd | 半導体装置 |
JP2005142321A (ja) | 2003-11-06 | 2005-06-02 | Nec Electronics Corp | 半導体集積回路装置およびその製造方法 |
JP4890838B2 (ja) * | 2005-11-17 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路のレイアウト設計方法、及びレイアウト設計ツール |
US7781289B1 (en) * | 2007-05-03 | 2010-08-24 | National Semiconductor Corporation | Method for fabricating higher quality thicker gate oxide in a non-volatile memory cell and associated circuits |
US20090042377A1 (en) * | 2007-08-08 | 2009-02-12 | Seetharaman Sridhar | Method for forming self-aligned wells to support tight spacing |
KR100959438B1 (ko) * | 2007-11-30 | 2010-05-25 | 주식회사 동부하이텍 | 정전기방전 보호소자 및 그 제조방법 |
JP2009182076A (ja) * | 2008-01-30 | 2009-08-13 | Panasonic Corp | 半導体装置及びその製造方法 |
US8377772B2 (en) * | 2010-08-17 | 2013-02-19 | Texas Instruments Incorporated | CMOS integration method for optimal IO transistor VT |
JP2014011336A (ja) * | 2012-06-29 | 2014-01-20 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2014207361A (ja) * | 2013-04-15 | 2014-10-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US9831134B1 (en) * | 2016-09-28 | 2017-11-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device having deep wells |
US10923344B2 (en) * | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
CN116153934B (zh) * | 2023-04-20 | 2023-06-27 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0671067B2 (ja) * | 1985-11-20 | 1994-09-07 | 株式会社日立製作所 | 半導体装置 |
JPH04211155A (ja) * | 1990-01-29 | 1992-08-03 | Matsushita Electron Corp | 半導体装置 |
JP2523409B2 (ja) | 1990-05-02 | 1996-08-07 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JP3252432B2 (ja) | 1992-03-19 | 2002-02-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
KR940003026A (ko) * | 1992-07-13 | 1994-02-19 | 김광호 | 트리플웰을 이용한 반도체장치 |
US5595925A (en) * | 1994-04-29 | 1997-01-21 | Texas Instruments Incorporated | Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein |
JPH09321135A (ja) * | 1996-05-24 | 1997-12-12 | Nippon Steel Corp | 半導体装置 |
JPH1070243A (ja) * | 1996-05-30 | 1998-03-10 | Toshiba Corp | 半導体集積回路装置およびその検査方法およびその検査装置 |
JP3777000B2 (ja) * | 1996-12-20 | 2006-05-24 | 富士通株式会社 | 半導体装置とその製造方法 |
JP3335876B2 (ja) | 1997-07-08 | 2002-10-21 | シャープ株式会社 | 半導体装置の製造方法及び半導体装置 |
JPH1197646A (ja) * | 1997-09-22 | 1999-04-09 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3419672B2 (ja) * | 1997-12-19 | 2003-06-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR100275725B1 (ko) * | 1997-12-27 | 2000-12-15 | 윤종용 | 트리플웰 구조를 갖는 반도체 메모리 장치 및 그 제조방법 |
JP2978467B2 (ja) * | 1998-03-16 | 1999-11-15 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JPH11261022A (ja) * | 1998-03-16 | 1999-09-24 | Hitachi Ltd | 半導体集積回路装置 |
JP3097652B2 (ja) * | 1998-03-31 | 2000-10-10 | 日本電気株式会社 | 半導体集積回路装置の製造方法 |
-
2000
- 2000-04-05 JP JP2000103083A patent/JP2001291779A/ja active Pending
- 2000-09-18 US US09/663,717 patent/US6388295B1/en not_active Expired - Lifetime
- 2000-12-08 KR KR1020000074707A patent/KR100362904B1/ko not_active IP Right Cessation
-
2001
- 2001-04-04 DE DE10116800A patent/DE10116800A1/de not_active Withdrawn
- 2001-04-04 FR FR0104561A patent/FR2808921B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6388295B1 (en) | 2002-05-14 |
KR20010096527A (ko) | 2001-11-07 |
FR2808921A1 (fr) | 2001-11-16 |
JP2001291779A (ja) | 2001-10-19 |
KR100362904B1 (ko) | 2002-11-29 |
DE10116800A1 (de) | 2001-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
PLFP | Fee payment |
Year of fee payment: 15 |
|
CA | Change of address |
Effective date: 20160217 |
|
TP | Transmission of property |
Owner name: RENESAS ELECTRONICS CORPORATION, JP Effective date: 20160217 |
|
ST | Notification of lapse |
Effective date: 20161230 |