FR2809534B1 - Dispositif semiconducteur a injection electronique verticale et son procede de fabrication - Google Patents

Dispositif semiconducteur a injection electronique verticale et son procede de fabrication

Info

Publication number
FR2809534B1
FR2809534B1 FR0006761A FR0006761A FR2809534B1 FR 2809534 B1 FR2809534 B1 FR 2809534B1 FR 0006761 A FR0006761 A FR 0006761A FR 0006761 A FR0006761 A FR 0006761A FR 2809534 B1 FR2809534 B1 FR 2809534B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
electronic injection
vertical electronic
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0006761A
Other languages
English (en)
Other versions
FR2809534A1 (fr
Inventor
Robert Baptist
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0006761A priority Critical patent/FR2809534B1/fr
Priority to EP01938322A priority patent/EP1284025A2/fr
Priority to US10/276,691 priority patent/US20030116791A1/en
Priority to PCT/FR2001/001603 priority patent/WO2001093310A2/fr
Publication of FR2809534A1 publication Critical patent/FR2809534A1/fr
Application granted granted Critical
Publication of FR2809534B1 publication Critical patent/FR2809534B1/fr
Priority to US11/561,685 priority patent/US7820461B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
FR0006761A 2000-05-26 2000-05-26 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication Expired - Lifetime FR2809534B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0006761A FR2809534B1 (fr) 2000-05-26 2000-05-26 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
EP01938322A EP1284025A2 (fr) 2000-05-26 2001-05-23 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US10/276,691 US20030116791A1 (en) 2000-05-26 2001-05-23 Semiconductor device with vertical electron injection and method for making same
PCT/FR2001/001603 WO2001093310A2 (fr) 2000-05-26 2001-05-23 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US11/561,685 US7820461B2 (en) 2000-05-26 2006-11-20 Semiconductor device with vertical electron injection and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0006761A FR2809534B1 (fr) 2000-05-26 2000-05-26 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2809534A1 FR2809534A1 (fr) 2001-11-30
FR2809534B1 true FR2809534B1 (fr) 2005-01-14

Family

ID=8850659

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0006761A Expired - Lifetime FR2809534B1 (fr) 2000-05-26 2000-05-26 Dispositif semiconducteur a injection electronique verticale et son procede de fabrication

Country Status (4)

Country Link
US (2) US20030116791A1 (fr)
EP (1) EP1284025A2 (fr)
FR (1) FR2809534B1 (fr)
WO (1) WO2001093310A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
DE10111501B4 (de) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2004228273A (ja) * 2003-01-22 2004-08-12 Renesas Technology Corp 半導体装置
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP5091445B2 (ja) * 2006-09-15 2012-12-05 株式会社東芝 半導体装置およびその製造方法
GB2467911B (en) * 2009-02-16 2013-06-05 Rfmd Uk Ltd A semiconductor structure and a method of manufacture thereof
US8405068B2 (en) * 2009-07-22 2013-03-26 Rfmd (Uk) Limited Reflecting light emitting structure and method of manufacture thereof
US8138068B2 (en) * 2010-08-11 2012-03-20 International Business Machines Corporation Method to form nanopore array
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9129802B2 (en) 2012-08-27 2015-09-08 Rf Micro Devices, Inc. Lateral semiconductor device with vertical breakdown region
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
CN105445854B (zh) * 2015-11-06 2018-09-25 南京邮电大学 硅衬底悬空led光波导集成光子器件及其制备方法
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
DE102021203956A1 (de) * 2021-04-21 2022-10-27 Robert Bosch Gesellschaft mit beschränkter Haftung Membran-halbleiterbauelement und verfahren zum herstellen desselben

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853650A (en) * 1973-02-12 1974-12-10 Honeywell Inc Stress sensor diaphragms over recessed substrates
US4279690A (en) * 1975-10-28 1981-07-21 Texas Instruments Incorporated High-radiance emitters with integral microlens
JPS5932073B2 (ja) * 1979-06-01 1984-08-06 三菱電機株式会社 発光ダイオ−ドおよびその製造方法
FR2484710A1 (fr) * 1980-06-13 1981-12-18 Thomson Csf Diode electroluminescente et son procede de fabrication
JPS57190371A (en) * 1981-05-20 1982-11-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photoelectric converter and manufacture thereof
CA1271550A (fr) * 1985-12-24 1990-07-10 Fumio Inaba Dispositif luminescent a semiconducteur, eclairant a la verticale
WO1987006060A1 (fr) * 1986-03-28 1987-10-08 Fairchild Semiconductor Corporation Procede permettant d'unir deux ou plusieurs tranches de semi-conducteurs et structure resultante
US5383993A (en) * 1989-09-01 1995-01-24 Nippon Soken Inc. Method of bonding semiconductor substrates
DE4106288C2 (de) * 1991-02-28 2001-05-31 Bosch Gmbh Robert Sensor zur Messung von Drücken oder Beschleunigungen
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
ATE231287T1 (de) * 1991-09-30 2003-02-15 Canon Kk Verfahren für anodische bindung mit lichtstrahlung
US5455203A (en) * 1992-02-20 1995-10-03 Seiko Instruments Inc. Method of adjusting the pressure detection value of semiconductor pressure switches
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
JPH06196727A (ja) * 1992-12-08 1994-07-15 Terumo Corp 光電変換装置
JPH08152356A (ja) * 1994-11-30 1996-06-11 Terumo Corp 赤外線センサ
JP3557011B2 (ja) * 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
JPH08307001A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レ−ザダイオ−ドおよびその製造方法
EP0871228A3 (fr) * 1997-04-09 2001-10-24 Matsushita Electric Industrial Co., Ltd. Substrat semi-conducteur, dispositif semi-conducteur et procédé de fabrication
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
KR100279737B1 (ko) * 1997-12-19 2001-02-01 정선종 전계방출소자와 광소자로 구성된 단파장 광전소자 및 그의 제작방법
US5933750A (en) * 1998-04-03 1999-08-03 Motorola, Inc. Method of fabricating a semiconductor device with a thinned substrate
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion

Also Published As

Publication number Publication date
FR2809534A1 (fr) 2001-11-30
US20030116791A1 (en) 2003-06-26
EP1284025A2 (fr) 2003-02-19
US20070093009A1 (en) 2007-04-26
WO2001093310A3 (fr) 2002-03-14
WO2001093310A9 (fr) 2002-05-30
US7820461B2 (en) 2010-10-26
WO2001093310A2 (fr) 2001-12-06

Similar Documents

Publication Publication Date Title
FR2809534B1 (fr) Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
FR2792458B1 (fr) Dispositif a semi-conducteur et son procede de fabrication
FR2799305B1 (fr) Procede de fabrication d&#39;un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
FR2816109B1 (fr) Circuit integre a transistor a grille isolee et procede de fabrication
FR2858112B1 (fr) Dispositif a semi conducteur, procede de fabrication du dispositif a semiconducteur et circuit integre incluant le dispositif a semiconducteur
FR2798223B1 (fr) Dispositif a semiconducteur et procede de fabrication de celui-ci
FR2831713B1 (fr) Dispositif a semi-conducteur et procede de fabrication
FR2805394B1 (fr) Dispositif a semiconducteur et procede de fabrication
FR2831764B1 (fr) Dispositif electroluminescent organique et son procede de fabrication
FR2645346B1 (fr) Dispositif semi-conducteur a trous de traversee d&#39;interconnexion et son procede de fabrication
FR2807612B1 (fr) Substrat en ceramique monolithique, son procede de conception et de fabrication et dispositif electronique l&#39;utilisant
FR2808122B1 (fr) Dispositif a semiconducteurs et procede pour sa fabrication
FR2738079B1 (fr) Dispositif a semiconducteurs, a tranchee, et procede de fabrication
FR2796757B1 (fr) Procede de fabrication de substrat soi et dispositif a semiconducteur
DE60020011D1 (de) Integrierte Schaltung mit einer mikromagnetischer Vorrichtung und sein Herstellungsverfahren
FR2864706B1 (fr) Dispositif electrolumninescent organique et son procede de fabrication
FR2858714B1 (fr) Procede de fabrication d&#39;un dispositif a semi-conducteur
FR2859043B1 (fr) Dispositif de memoire magnetique permanente et son procede de fabrication
FR2866977B1 (fr) Dispositif de memoire resistive et son procede de fabrication
FR2841381B1 (fr) Circuit integre a semi-conducteur et un procede de fabrication du circuit
FR2791180B1 (fr) Dispositif semi-conducteur a courant de fuite reduit et son procede de fabrication
FR2750799B1 (fr) Dispositif a semiconducteurs empechant le deverrouillage et procede de fabrication de ce dispositif
FR2724052B1 (fr) Assemblage de dispositif electronique et son procede de fabrication.
DE60002302D1 (de) Lichtemittierende vorrichtung aus silizium und herstellungsverfahren
FR2824666B1 (fr) Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 17

PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19

PLFP Fee payment

Year of fee payment: 20