DE60003451D1 - Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfrei - Google Patents
Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfreiInfo
- Publication number
- DE60003451D1 DE60003451D1 DE60003451T DE60003451T DE60003451D1 DE 60003451 D1 DE60003451 D1 DE 60003451D1 DE 60003451 T DE60003451 T DE 60003451T DE 60003451 T DE60003451 T DE 60003451T DE 60003451 D1 DE60003451 D1 DE 60003451D1
- Authority
- DE
- Germany
- Prior art keywords
- sector
- wordline
- array
- conductor line
- tracking structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US431296 | 1999-10-29 | ||
US09/431,296 US6163481A (en) | 1999-10-29 | 1999-10-29 | Flash memory wordline tracking across whole chip |
PCT/US2000/026814 WO2001033571A1 (en) | 1999-10-29 | 2000-09-29 | Flash memory wordline tracking across whole chip |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60003451D1 true DE60003451D1 (de) | 2003-07-24 |
DE60003451T2 DE60003451T2 (de) | 2004-05-06 |
Family
ID=23711314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60003451T Expired - Lifetime DE60003451T2 (de) | 1999-10-29 | 2000-09-29 | Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfrei |
Country Status (9)
Country | Link |
---|---|
US (1) | US6163481A (de) |
EP (1) | EP1226586B1 (de) |
JP (1) | JP4757422B2 (de) |
KR (1) | KR100708914B1 (de) |
CN (1) | CN1212621C (de) |
AT (1) | ATE243359T1 (de) |
DE (1) | DE60003451T2 (de) |
TW (1) | TW507201B (de) |
WO (1) | WO2001033571A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6385091B1 (en) | 2001-05-01 | 2002-05-07 | Micron Technology, Inc. | Read reference scheme for non-volatile memory |
KR100632942B1 (ko) | 2004-05-17 | 2006-10-12 | 삼성전자주식회사 | 불 휘발성 메모리 장치의 프로그램 방법 |
US7085168B2 (en) * | 2004-12-30 | 2006-08-01 | Macronix International Co., Ltd. | Programming method for controlling memory threshold voltage distribution |
US7397708B2 (en) * | 2005-08-03 | 2008-07-08 | Infineon Technologies Ag | Technique to suppress leakage current |
US7573775B2 (en) * | 2006-02-09 | 2009-08-11 | Fujitsu Limited | Setting threshold voltages of cells in a memory block to reduce leakage in the memory block |
US7564716B2 (en) * | 2006-11-16 | 2009-07-21 | Freescale Semiconductor, Inc. | Memory device with retained indicator of read reference level |
US7865797B2 (en) * | 2006-11-16 | 2011-01-04 | Freescale Semiconductor, Inc. | Memory device with adjustable read reference based on ECC and method thereof |
US8677221B2 (en) * | 2008-01-02 | 2014-03-18 | Apple Inc. | Partial voltage read of memory |
US7848174B2 (en) * | 2008-05-23 | 2010-12-07 | Taiwan Semiconductor Manufacturing Co, Ltd. | Memory word-line tracking scheme |
US8406072B2 (en) * | 2010-08-23 | 2013-03-26 | Qualcomm Incorporated | System and method of reference cell testing |
CN102930893B (zh) * | 2012-11-09 | 2015-07-08 | 苏州兆芯半导体科技有限公司 | 一种时序追踪电路及方法 |
KR102356072B1 (ko) * | 2015-09-10 | 2022-01-27 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그 동작 방법 |
US11127460B2 (en) * | 2017-09-29 | 2021-09-21 | Crossbar, Inc. | Resistive random access memory matrix multiplication structures and methods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07297376A (ja) * | 1994-04-21 | 1995-11-10 | Toshiba Corp | 不揮発性半導体メモリ |
US5657277A (en) * | 1996-04-23 | 1997-08-12 | Micron Technology, Inc. | Memory device tracking circuit |
FR2753829B1 (fr) * | 1996-09-24 | 1998-11-13 | Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation | |
WO1999027537A1 (en) * | 1997-11-21 | 1999-06-03 | Macronix International Co., Ltd. | On chip voltage generation for low power integrated circuits |
JP2003288791A (ja) * | 2003-02-26 | 2003-10-10 | Hitachi Ltd | 半導体集積回路装置及びマイクロプロセッサ |
-
1999
- 1999-10-29 US US09/431,296 patent/US6163481A/en not_active Expired - Lifetime
-
2000
- 2000-09-29 DE DE60003451T patent/DE60003451T2/de not_active Expired - Lifetime
- 2000-09-29 KR KR1020027005527A patent/KR100708914B1/ko not_active IP Right Cessation
- 2000-09-29 EP EP00967094A patent/EP1226586B1/de not_active Expired - Lifetime
- 2000-09-29 AT AT00967094T patent/ATE243359T1/de not_active IP Right Cessation
- 2000-09-29 WO PCT/US2000/026814 patent/WO2001033571A1/en active IP Right Grant
- 2000-09-29 JP JP2001535177A patent/JP4757422B2/ja not_active Expired - Fee Related
- 2000-09-29 CN CNB008139679A patent/CN1212621C/zh not_active Expired - Fee Related
- 2000-09-29 TW TW089120175A patent/TW507201B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20030009316A (ko) | 2003-01-29 |
ATE243359T1 (de) | 2003-07-15 |
TW507201B (en) | 2002-10-21 |
WO2001033571A1 (en) | 2001-05-10 |
CN1378694A (zh) | 2002-11-06 |
DE60003451T2 (de) | 2004-05-06 |
JP4757422B2 (ja) | 2011-08-24 |
US6163481A (en) | 2000-12-19 |
EP1226586A1 (de) | 2002-07-31 |
KR100708914B1 (ko) | 2007-04-18 |
EP1226586B1 (de) | 2003-06-18 |
CN1212621C (zh) | 2005-07-27 |
JP2003513460A (ja) | 2003-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW360867B (en) | Semiconductor storage memory device | |
DE60003451D1 (de) | Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfrei | |
US7706209B2 (en) | Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operation | |
EP1158532A3 (de) | Halbleiterspeicheranordnung | |
TW257867B (en) | Memory architecture for a three volt flash EEPROM | |
US6765828B2 (en) | Non-volatile semiconductor storage device and method of reading out data | |
SG134992A1 (en) | A new design concept for sram read margin | |
TW281762B (en) | Ferroelectric memory using reference charge circuit | |
EP1168362A3 (de) | Flashspeicher mit bessere Löschbarkeit und Schaltungen dazu | |
TW359835B (en) | Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path | |
TW337020B (en) | Memory suitable for operation at low power supply voltages and sense amplifier therefor | |
MY114633A (en) | A microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simulatenous read/write access to both sectors | |
TW351785B (en) | Improved interface for flash EEPROM memory array | |
SG131754A1 (en) | Semiconductor storage device and information apparatus | |
DE59706533D1 (de) | Einzelelektron-Speicherzellenanordnung | |
EP0586114A3 (en) | A semiconductor read only memory | |
TW358940B (en) | Semiconductor storage device | |
JP3998908B2 (ja) | 不揮発性メモリ装置 | |
EP0869509A3 (de) | Nichtflüchtiger Halbleiterspeicher | |
DE60043444D1 (de) | 1 transistorzelle für eeprom anwendung | |
EP0741389A3 (de) | Lesen einer nichtflüchtigen Speichermatrix | |
JPS5769584A (en) | Non-volatile semiconductor memory | |
KR930020430A (ko) | 불휘발성 반도체 기억장치 | |
TW358908B (en) | Data processing device | |
KR0164816B1 (ko) | 외부전원전압을 워드라인 구동전압으로 사용하는 반도체 메모리 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU LTD., KAWASAKI, KANAGAWA, JP Owner name: SPANSION LLC ((N.D.GES.D. STAATES DELAWARE), SUNNY |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SUNNYV |