CN1212621C - 用于快闪电可擦除可编程只读存储器中的字线追踪结构 - Google Patents
用于快闪电可擦除可编程只读存储器中的字线追踪结构 Download PDFInfo
- Publication number
- CN1212621C CN1212621C CNB008139679A CN00813967A CN1212621C CN 1212621 C CN1212621 C CN 1212621C CN B008139679 A CNB008139679 A CN B008139679A CN 00813967 A CN00813967 A CN 00813967A CN 1212621 C CN1212621 C CN 1212621C
- Authority
- CN
- China
- Prior art keywords
- section
- word line
- voltage
- array
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 claims 1
- 230000005055 memory storage Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000007667 floating Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- KMIOJWCYOHBUJS-HAKPAVFJSA-N vorolanib Chemical compound C1N(C(=O)N(C)C)CC[C@@H]1NC(=O)C1=C(C)NC(\C=C/2C3=CC(F)=CC=C3NC\2=O)=C1C KMIOJWCYOHBUJS-HAKPAVFJSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/431,296 US6163481A (en) | 1999-10-29 | 1999-10-29 | Flash memory wordline tracking across whole chip |
US09/431,296 | 1999-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1378694A CN1378694A (zh) | 2002-11-06 |
CN1212621C true CN1212621C (zh) | 2005-07-27 |
Family
ID=23711314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008139679A Expired - Fee Related CN1212621C (zh) | 1999-10-29 | 2000-09-29 | 用于快闪电可擦除可编程只读存储器中的字线追踪结构 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6163481A (zh) |
EP (1) | EP1226586B1 (zh) |
JP (1) | JP4757422B2 (zh) |
KR (1) | KR100708914B1 (zh) |
CN (1) | CN1212621C (zh) |
AT (1) | ATE243359T1 (zh) |
DE (1) | DE60003451T2 (zh) |
TW (1) | TW507201B (zh) |
WO (1) | WO2001033571A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6385091B1 (en) | 2001-05-01 | 2002-05-07 | Micron Technology, Inc. | Read reference scheme for non-volatile memory |
KR100632942B1 (ko) | 2004-05-17 | 2006-10-12 | 삼성전자주식회사 | 불 휘발성 메모리 장치의 프로그램 방법 |
US7085168B2 (en) * | 2004-12-30 | 2006-08-01 | Macronix International Co., Ltd. | Programming method for controlling memory threshold voltage distribution |
US7397708B2 (en) * | 2005-08-03 | 2008-07-08 | Infineon Technologies Ag | Technique to suppress leakage current |
US7573775B2 (en) * | 2006-02-09 | 2009-08-11 | Fujitsu Limited | Setting threshold voltages of cells in a memory block to reduce leakage in the memory block |
US7564716B2 (en) * | 2006-11-16 | 2009-07-21 | Freescale Semiconductor, Inc. | Memory device with retained indicator of read reference level |
US7865797B2 (en) * | 2006-11-16 | 2011-01-04 | Freescale Semiconductor, Inc. | Memory device with adjustable read reference based on ECC and method thereof |
US8677221B2 (en) * | 2008-01-02 | 2014-03-18 | Apple Inc. | Partial voltage read of memory |
US7848174B2 (en) * | 2008-05-23 | 2010-12-07 | Taiwan Semiconductor Manufacturing Co, Ltd. | Memory word-line tracking scheme |
US8406072B2 (en) * | 2010-08-23 | 2013-03-26 | Qualcomm Incorporated | System and method of reference cell testing |
CN102930893B (zh) * | 2012-11-09 | 2015-07-08 | 苏州兆芯半导体科技有限公司 | 一种时序追踪电路及方法 |
KR102356072B1 (ko) * | 2015-09-10 | 2022-01-27 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그 동작 방법 |
US11127460B2 (en) * | 2017-09-29 | 2021-09-21 | Crossbar, Inc. | Resistive random access memory matrix multiplication structures and methods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07297376A (ja) * | 1994-04-21 | 1995-11-10 | Toshiba Corp | 不揮発性半導体メモリ |
US5657277A (en) * | 1996-04-23 | 1997-08-12 | Micron Technology, Inc. | Memory device tracking circuit |
FR2753829B1 (fr) * | 1996-09-24 | 1998-11-13 | Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation | |
WO1999027537A1 (en) * | 1997-11-21 | 1999-06-03 | Macronix International Co., Ltd. | On chip voltage generation for low power integrated circuits |
JP2003288791A (ja) * | 2003-02-26 | 2003-10-10 | Hitachi Ltd | 半導体集積回路装置及びマイクロプロセッサ |
-
1999
- 1999-10-29 US US09/431,296 patent/US6163481A/en not_active Expired - Lifetime
-
2000
- 2000-09-29 DE DE60003451T patent/DE60003451T2/de not_active Expired - Lifetime
- 2000-09-29 KR KR1020027005527A patent/KR100708914B1/ko not_active IP Right Cessation
- 2000-09-29 EP EP00967094A patent/EP1226586B1/en not_active Expired - Lifetime
- 2000-09-29 AT AT00967094T patent/ATE243359T1/de not_active IP Right Cessation
- 2000-09-29 WO PCT/US2000/026814 patent/WO2001033571A1/en active IP Right Grant
- 2000-09-29 JP JP2001535177A patent/JP4757422B2/ja not_active Expired - Fee Related
- 2000-09-29 CN CNB008139679A patent/CN1212621C/zh not_active Expired - Fee Related
- 2000-09-29 TW TW089120175A patent/TW507201B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20030009316A (ko) | 2003-01-29 |
ATE243359T1 (de) | 2003-07-15 |
TW507201B (en) | 2002-10-21 |
WO2001033571A1 (en) | 2001-05-10 |
CN1378694A (zh) | 2002-11-06 |
DE60003451T2 (de) | 2004-05-06 |
JP4757422B2 (ja) | 2011-08-24 |
DE60003451D1 (de) | 2003-07-24 |
US6163481A (en) | 2000-12-19 |
EP1226586A1 (en) | 2002-07-31 |
KR100708914B1 (ko) | 2007-04-18 |
EP1226586B1 (en) | 2003-06-18 |
JP2003513460A (ja) | 2003-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1212621C (zh) | 用于快闪电可擦除可编程只读存储器中的字线追踪结构 | |
US5673224A (en) | Segmented non-volatile memory array with multiple sources with improved word line control circuitry | |
EP0714101B1 (en) | An integrated circuit memory device with voltage boost | |
US5313432A (en) | Segmented, multiple-decoder memory array and method for programming a memory array | |
US5687117A (en) | Segmented non-volatile memory array with multiple sources having improved source line decode circuitry | |
US5517457A (en) | Semiconductor memory device | |
KR100759615B1 (ko) | 반도체 기억 장치 및 메모리 카드 | |
EP0186054B1 (en) | Semiconductor memory device having improved write-verify operation | |
JP3633853B2 (ja) | フラッシュメモリの消去動作制御方法およびフラッシュメモリの消去動作制御装置 | |
US20080043538A1 (en) | Non-volatile semiconductor storage device and word line drive method | |
US20070002654A1 (en) | Method and apparatus for sensing a state of a memory cell | |
US6961268B2 (en) | Nonvolatile semiconductor memory device with MOS transistors each having a floating gate and a control gate | |
EP0991075B1 (en) | Circuit device for providing a hierarchical row decoding in semiconductor memory devices | |
US6011717A (en) | EEPROM memory programmable and erasable by Fowler-Nordheim effect | |
TW379328B (en) | Column decoding circuit of flash memory having separated character lines | |
US7042767B2 (en) | Flash memory unit and method of programming a flash memory device | |
JP2004503898A (ja) | ワード線及び選択線における電圧を正確に制御するためにフラッシュメモリxデコーダの容量性負荷を減少させる方法 | |
EP1646051A1 (en) | Memory device and method for operating the same with high rejection of the noise on the high-voltage supply line | |
US6272045B1 (en) | Nonvolatile semiconductor memory device | |
US20010050865A1 (en) | Method of erasing a non-volatile memory | |
JPH09502042A (ja) | フラッシュeprom構造負電圧発生器 | |
CN1484249A (zh) | 非易失性半导体存储设备 | |
JPH0793013B2 (ja) | 半導体メモリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AMD (USA) CO., LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20040820 Address after: California, USA Applicant after: AMD (USA) Limited by Share Ltd. Co-applicant after: FUJITSU Ltd. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. Co-applicant before: Fujitsu Ltd. |
|
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20041029 Owner name: AMD INVESTMENT CO., LTD. Free format text: FORMER OWNER: AMD (USA) CO., LTD. Owner name: ADVANCED MICRO DEVICES INC. Free format text: FORMER OWNER: AMD INVESTMENT CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20041029 Address after: California, USA Applicant after: Flying cable Co.,Ltd. Address before: California, USA Applicant before: AMD Investments Ltd. Co-applicant before: Fujitsu Ltd. Effective date of registration: 20041029 Address after: California, USA Applicant after: AMD Investments Ltd. Co-applicant after: FUJITSU Ltd. Address before: California, USA Applicant before: AMD (USA) Limited by Share Ltd. Co-applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: SPANSION CO., LTD. Free format text: FORMER NAME OR ADDRESS: ADVANCED MICRO DEVICES INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: SPANSION LLC Address before: California, USA Patentee before: Flying cable Co.,Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050727 Termination date: 20160929 |