JPS5769584A - Non-volatile semiconductor memory - Google Patents
Non-volatile semiconductor memoryInfo
- Publication number
- JPS5769584A JPS5769584A JP14394880A JP14394880A JPS5769584A JP S5769584 A JPS5769584 A JP S5769584A JP 14394880 A JP14394880 A JP 14394880A JP 14394880 A JP14394880 A JP 14394880A JP S5769584 A JPS5769584 A JP S5769584A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- line
- vth5
- writing
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
PURPOSE:To shorten a test time, by programming plural memory cells at the same time as to 1 bit of an output of a cell array. CONSTITUTION:In case of testing whether all cells of a non-volatile memory 1 are capable of writing or not, both signals Y1, Y2 of an additional circuit 14 are raised to the vicinity of potential of program power supply VP, and row wires 20, 21... are connected to the power supply VP. In this state, when voltage of 25V is applied in order to select 1 line wire each by a line decoder 4, potential of VP and potential of VP-Vth5 (Vth5 denotes threshold voltage of IG-FETs 50, 51...) are applied to the gate and the drain, respectively, of each IG-FET connected to its line wire, and write is executed. Accordingly, when writing in order to test a memory, the number of times corresponding to the number of line wires will do, and a test time is shortened.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14394880A JPS5769584A (en) | 1980-10-15 | 1980-10-15 | Non-volatile semiconductor memory |
DE8686201618T DE3177270D1 (en) | 1980-10-15 | 1981-10-07 | SEMICONDUCTOR MEMORY WITH DATA PROGRAMMING TIME. |
EP81304660A EP0050005B1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improved data programming time |
EP19860201618 EP0214705B1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improvend data programming time |
DE8181304660T DE3176751D1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improved data programming time |
US06/310,822 US4477884A (en) | 1980-10-15 | 1981-10-13 | Semiconductor memory with improved data programming time |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14394880A JPS5769584A (en) | 1980-10-15 | 1980-10-15 | Non-volatile semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5769584A true JPS5769584A (en) | 1982-04-28 |
JPS628877B2 JPS628877B2 (en) | 1987-02-25 |
Family
ID=15350768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14394880A Granted JPS5769584A (en) | 1980-10-15 | 1980-10-15 | Non-volatile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5769584A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (en) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | Eprom memory device with test circuit |
JPS6086169A (en) * | 1983-10-19 | 1985-05-15 | Nippon Kayaku Co Ltd | Azo compound and dyeing of fiber material using the same |
JPS6090264A (en) * | 1983-10-25 | 1985-05-21 | Nippon Kayaku Co Ltd | Formazan compound and dyeing of fibrous material using it |
JPS6090265A (en) * | 1983-10-25 | 1985-05-21 | Nippon Kayaku Co Ltd | Disazo compound and dyeing of fibrous material using it |
JPS60229300A (en) * | 1984-03-01 | 1985-11-14 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Eeprom type memory |
US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
US6404663B2 (en) * | 1999-06-14 | 2002-06-11 | Fujitsu Limited | Semiconductor integrated circuit having testing mode for modifying operation timing |
US6535441B2 (en) * | 2001-01-23 | 2003-03-18 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device capable of accurately detecting failure in standby mode |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0512142Y2 (en) * | 1986-01-21 | 1993-03-26 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
-
1980
- 1980-10-15 JP JP14394880A patent/JPS5769584A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (en) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | Eprom memory device with test circuit |
JPS6086169A (en) * | 1983-10-19 | 1985-05-15 | Nippon Kayaku Co Ltd | Azo compound and dyeing of fiber material using the same |
JPH0420949B2 (en) * | 1983-10-19 | 1992-04-07 | Nippon Kayaku Kk | |
JPS6090264A (en) * | 1983-10-25 | 1985-05-21 | Nippon Kayaku Co Ltd | Formazan compound and dyeing of fibrous material using it |
JPS6090265A (en) * | 1983-10-25 | 1985-05-21 | Nippon Kayaku Co Ltd | Disazo compound and dyeing of fibrous material using it |
JPH0420950B2 (en) * | 1983-10-25 | 1992-04-07 | Nippon Kayaku Kk | |
JPS60229300A (en) * | 1984-03-01 | 1985-11-14 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Eeprom type memory |
US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
US6404663B2 (en) * | 1999-06-14 | 2002-06-11 | Fujitsu Limited | Semiconductor integrated circuit having testing mode for modifying operation timing |
US6535441B2 (en) * | 2001-01-23 | 2003-03-18 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device capable of accurately detecting failure in standby mode |
Also Published As
Publication number | Publication date |
---|---|
JPS628877B2 (en) | 1987-02-25 |
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