JPS5769584A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS5769584A
JPS5769584A JP14394880A JP14394880A JPS5769584A JP S5769584 A JPS5769584 A JP S5769584A JP 14394880 A JP14394880 A JP 14394880A JP 14394880 A JP14394880 A JP 14394880A JP S5769584 A JPS5769584 A JP S5769584A
Authority
JP
Japan
Prior art keywords
potential
line
vth5
writing
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14394880A
Other languages
Japanese (ja)
Other versions
JPS628877B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14394880A priority Critical patent/JPS5769584A/en
Priority to DE8686201618T priority patent/DE3177270D1/en
Priority to EP81304660A priority patent/EP0050005B1/en
Priority to EP19860201618 priority patent/EP0214705B1/en
Priority to DE8181304660T priority patent/DE3176751D1/en
Priority to US06/310,822 priority patent/US4477884A/en
Publication of JPS5769584A publication Critical patent/JPS5769584A/en
Publication of JPS628877B2 publication Critical patent/JPS628877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To shorten a test time, by programming plural memory cells at the same time as to 1 bit of an output of a cell array. CONSTITUTION:In case of testing whether all cells of a non-volatile memory 1 are capable of writing or not, both signals Y1, Y2 of an additional circuit 14 are raised to the vicinity of potential of program power supply VP, and row wires 20, 21... are connected to the power supply VP. In this state, when voltage of 25V is applied in order to select 1 line wire each by a line decoder 4, potential of VP and potential of VP-Vth5 (Vth5 denotes threshold voltage of IG-FETs 50, 51...) are applied to the gate and the drain, respectively, of each IG-FET connected to its line wire, and write is executed. Accordingly, when writing in order to test a memory, the number of times corresponding to the number of line wires will do, and a test time is shortened.
JP14394880A 1980-10-15 1980-10-15 Non-volatile semiconductor memory Granted JPS5769584A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP14394880A JPS5769584A (en) 1980-10-15 1980-10-15 Non-volatile semiconductor memory
DE8686201618T DE3177270D1 (en) 1980-10-15 1981-10-07 SEMICONDUCTOR MEMORY WITH DATA PROGRAMMING TIME.
EP81304660A EP0050005B1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improved data programming time
EP19860201618 EP0214705B1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improvend data programming time
DE8181304660T DE3176751D1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improved data programming time
US06/310,822 US4477884A (en) 1980-10-15 1981-10-13 Semiconductor memory with improved data programming time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14394880A JPS5769584A (en) 1980-10-15 1980-10-15 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5769584A true JPS5769584A (en) 1982-04-28
JPS628877B2 JPS628877B2 (en) 1987-02-25

Family

ID=15350768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14394880A Granted JPS5769584A (en) 1980-10-15 1980-10-15 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5769584A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107493A (en) * 1982-12-09 1984-06-21 Ricoh Co Ltd Eprom memory device with test circuit
JPS6086169A (en) * 1983-10-19 1985-05-15 Nippon Kayaku Co Ltd Azo compound and dyeing of fiber material using the same
JPS6090264A (en) * 1983-10-25 1985-05-21 Nippon Kayaku Co Ltd Formazan compound and dyeing of fibrous material using it
JPS6090265A (en) * 1983-10-25 1985-05-21 Nippon Kayaku Co Ltd Disazo compound and dyeing of fibrous material using it
JPS60229300A (en) * 1984-03-01 1985-11-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Eeprom type memory
US4984212A (en) * 1984-09-26 1991-01-08 Hitachi, Ltd. Semiconductor memory
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
US6404663B2 (en) * 1999-06-14 2002-06-11 Fujitsu Limited Semiconductor integrated circuit having testing mode for modifying operation timing
US6535441B2 (en) * 2001-01-23 2003-03-18 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device capable of accurately detecting failure in standby mode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512142Y2 (en) * 1986-01-21 1993-03-26

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
JPS54110742A (en) * 1978-02-17 1979-08-30 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
JPS54110742A (en) * 1978-02-17 1979-08-30 Sanyo Electric Co Ltd Nonvolatile semiconductor memory device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107493A (en) * 1982-12-09 1984-06-21 Ricoh Co Ltd Eprom memory device with test circuit
JPS6086169A (en) * 1983-10-19 1985-05-15 Nippon Kayaku Co Ltd Azo compound and dyeing of fiber material using the same
JPH0420949B2 (en) * 1983-10-19 1992-04-07 Nippon Kayaku Kk
JPS6090264A (en) * 1983-10-25 1985-05-21 Nippon Kayaku Co Ltd Formazan compound and dyeing of fibrous material using it
JPS6090265A (en) * 1983-10-25 1985-05-21 Nippon Kayaku Co Ltd Disazo compound and dyeing of fibrous material using it
JPH0420950B2 (en) * 1983-10-25 1992-04-07 Nippon Kayaku Kk
JPS60229300A (en) * 1984-03-01 1985-11-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Eeprom type memory
US4984212A (en) * 1984-09-26 1991-01-08 Hitachi, Ltd. Semiconductor memory
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
US6404663B2 (en) * 1999-06-14 2002-06-11 Fujitsu Limited Semiconductor integrated circuit having testing mode for modifying operation timing
US6535441B2 (en) * 2001-01-23 2003-03-18 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device capable of accurately detecting failure in standby mode

Also Published As

Publication number Publication date
JPS628877B2 (en) 1987-02-25

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