CN1383215A - 半导体器件及其制造方法 - Google Patents
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Abstract
一半导体器件,该器件通过对粘合在隔离体上的第一衬底和第二衬底进行切割而形成,其中:隔离***于切割后的第一衬底的一端;第二衬底是形成有一个或多个光接收元件的半导体晶片;第一衬底具有将光线会聚在上述光接收元件上的光学元件或光学元件组。一制造这一半导体器件的方法。一半导体器件制造方法,包括:检测半导体衬底的翘曲一步;在去除翘曲的条件下将半导体衬底保持在基底上一步;将相对衬底粘合到半导体衬底上一步;对相对衬底进行切割的一步,其中,粘合到半导体衬底上的相对衬底用相应于半导体衬底的翘曲的尺寸或用与相对衬底相邻的间隔而设定。
Description
发明背景
发明领域
本申请涉及一种半导体器件及其制造方法,更具体的说,涉及一种具有光电转换元件的半导体器件及其制造方法。
相关背景技术
传统的图像拾取组件具有含有光接收元件的半导体芯片,并具有含有将光会聚在光接收元件上的透镜的衬底。半导体芯片和衬底安装在隔离体的两侧以一定距离将它们分开。光线可以会聚在每个光接收元件的光接收平面,从而可以形成真实的图像。
图18A、18B和18C是说明传统的图像拾取组件制造方法的分解透视图。图18A示出了具有用于将光线会聚在光接收元件上的透镜的衬底917,图18B示出了隔离体901,图18C示出了具有光接收元件100的半导体芯片503。根据传统的图像拾取组件的制造方法,衬底917和半导体芯片503被粘在隔离体901的两侧以形成图像拾取组件。如果多个图像拾取组件中的每一个都以这一方法进行制造,要求大量的制造工序包括半导体芯片503和衬底917的对准工序。
图19A、19B和19C是说明另一个传统图像拾取组件制造方法的横截面示意图。
图19A是形成有多个半导体芯片的半导体晶片910示意横截面图,该晶片具有由钝化膜或由半导体器件制造过程中形成的类似的物质引起的翘曲。在晶片为8英寸片的情况下,该翘曲在最高和最低位置间的高度差例如大约为0.2mm。具有翘曲的晶片具有卷形、鞍形、碗形或其他类似的形状。
如图19B所示,半导体晶片910的翘曲通过使用夹具950对晶片910的底面进行吸取而被消除。
接下来,如图19C所示,半导体晶片910和衬底917通过隔离体901粘在一起。
此后,半导体晶片910的吸力被释放以将半导体晶片910和透镜衬底917从夹具950上卸下来。将该半导体晶片和透镜衬底组件沿每个半导体芯片和透镜切割下来以形成图像拾取组件。通过单一对准工艺将半导体晶片910和半导体芯片及衬底917粘合在一起的方法适合于多个图像拾取组件的制造。(第一个技术问题)
半导体晶片910通过隔离体901粘合到具有用于将光发散(diverging)到光接收元件上的多个透镜的透镜衬底917上后,每个图像拾取组件通过沿半导体芯片间的每条切割线切割衬底而形成。在切割期间,从切割刀向衬底917施力。该力可以改变透镜的表面形状,从而改变其反射率,降低聚焦性能。
因此,本发明的一个目的在于高效制造一种半导体器件,如图像拾取组件,该器件在切割期间不会改变透镜的表面形状。(第二个技术问题)
借助图19A到19C所示的制造方法,在半导体晶片910的吸力被释放后,半导体晶片910趋于恢复原始翘曲状态。如果透镜衬底917被粘合到凸面上具有翘曲的半导体晶片910上,在半导体晶片910周边区域,半导体晶片910和透镜衬底917将有可能剥离。
相反的,如果借助于凹面侧的翘曲将透镜衬底917粘合到半导体晶片910上,在半导体晶片910中心区域,半导体晶片910和透镜衬底917将有可能剥离。
如果半导体晶片910和透镜衬底917在最糟情况下剥落,或如果半导体晶片910和透镜衬底917之间的粘合层伸长,半导体晶片910和透镜衬底917之间的距离将发生改变,从而使光线不能精确地会聚在光接收元件上,并在某些情况下不能进行希望的图像拾取。
因此,本发明的另一发明目的在于制造一种半导体器件,如图像拾取组件,该半导体器件可以通过设定半导体衬底如半导体晶片910的翘曲来实现可靠的图像拾取。
发明概要
根据本发明的一个方面,本发明提供了一种半导体器件,该器件通过对通过隔离体粘合在一起的第一衬底和第二衬底进行切割而形成,其中:隔离***于切割后的第一衬底的一端;第二衬底是形成有一个或多个光接收元件的半导体晶片;第一衬底具有用于将光线会聚在光接收元件上的光学元件或光学元件组。
根据本发明的另一个方面,本发明提供了一种半导体器件制造方法,包括:使用隔离体将第一衬底和第二衬底粘合在一起一步;和切割第一和第二衬底一步,其中切割第一衬底的步骤在隔离***于第一衬底下的位置切割第一衬底。
根据本发明的又一方面,本发明提供了一种半导体器件制造方法,包括:在去除翘曲的条件下将半导体衬底保持在基底上一步;借助于根据半导体衬底的翘曲调整的尺寸将相对衬底粘合到半导体衬底上一步;然后切割相对衬底的一步。
附图说明
图1A是根据本发明的第一实施例的半导体器件的结构的顶面示意图。
图1B是沿图1A中1B-1B线的横截面示意图。
图1C是图1A中示出的半导体芯片的顶视图。
图1D是连接到外部电子电路的第一实施例的半导体器件的横截面示意图。
图2是表示图1C中示出的光接收元件822a和822b附近的区域的横截面示意图。
图3是图像拾取区域和用安装在本实施例的图像拾取组件上的复眼透镜拾取的被摄物图像(subject image)之间的位置关系的图解。
图4是表示图3所示的图像拾取区域被投射时各像素之间的位置关系的图解。
图5是说明根据本发明的半导体制造方法的分解断面透视图。
图6是图5所示的隔离体901的顶视图。
图7是粘有隔离体901的半导体晶片910的顶视图。
图8是具有隔离体901的半导体晶片910的顶视图,该隔离体粘合有一个光学元件组917。
图9是具有隔离体901的半导体晶片910的顶视图,该隔离体粘有所有光学元件组917。
图10是说明所有光学元件组917被粘合后要执行的切割工艺的横截面示意图。
图11是去红外线滤光器的光谱透射率特性的曲线图。
图12A、12B、12C和12D是根据本发明第二实施例的半导体器件的制造过程的示意图。
图13是光学元件组的顶视图。
图14是光学元件组的顶视图。
图15是具有半导体芯片的半导体晶片平面示意图。
图16是图15示出的粘有图13和14示出的光学元件组的半导体晶片平面示意图。
图17是全部表面安装有光学元件组的半导体晶片的平面示意图。
图18A、18B和18C是传统的图像拾取组件制造过程的分解断面透视图。
图19A到19C是说明另一传统的图像拾取组件制造过程的横断面示意图。
优选实施例的详细说明
本发明的实施例将参考附图进行描述。
在本发明所述的半导体器件中,图像拾取组件被用作实施例。
[第一实施例]
图1A是表示根据本发明的第一实施例的半导体器件的结构的顶视图。图1B是沿图1A中1B-1B线的横截面示意图。图1C是图1A中示出的半导体芯片503的顶视图。图1D是表示连接到外部电子电路的第一实施例的半导体器件的横截面示意图。
参考图1A到1D,附图标记560代表去红外线滤光器。附图标记501代表被切割后组成第一衬底的光传送部件。附图标记506代表用光屏蔽材料制成的阻挡光屏蔽层,例如,印制在光传输部件501上的去红外线滤光器560上的补偿层。附图标记512代表具有由去红外线滤光器、阻挡光屏蔽层506和凸透镜600a、600c和未示出的凸透镜600b和600d组成的复眼透镜的复眼光学元件。在本实施例中,虽然使用了具有由四个凸透镜组成的复眼透镜的复眼光学元件,但是透镜的数目并不局限于此,其数目根据所需而定。例如,可使用仅具有一个透镜的光学元件。附图标记810a、810b、810c和810d代表穿过阻挡光屏蔽层506形成的阻挡孔。透镜600a、600b、600c和600d的光轴最好与阻挡孔810a、810b、810c和810d同轴配置。去红外线滤光器560可以被省去。这样,可以形成较薄的图像拾取组件。附图标记503代表被切割后作为第二衬底的半导体芯片,该半导体芯片具有包含二维空间设置的光接收元件的像素(未示出)。附图标记522代表隔离体,该隔离体决定了复眼光学元件512和半导体芯片503之间的距离。附图标记509代表用于通过隔离体522将复眼光学元件512和半导体芯片503粘合起来的粘合部件。附图标记513代表电极焊盘或用于向外输出由如MOS型图像拾取元件或CCD图像拾取元件或光发射元件之类的光接收元件提供的输出信号的外部端子。附图标记508代表光屏蔽部件,该光屏蔽部件形成在由复眼光学元件512、隔离体522和半导体芯片503、阻挡四个凸透镜间的光学串扰的光屏蔽部件所围绕的空间中。附图标记516代表用于增加每个光接收元件的光转换效率的微透镜。附图标记820a、820b、820c和820d代表光接收区域,在该区域中,光接收元件二维地置于半导体芯片503上。附图标记514代表用于将每个光接收元件的输出信号转换为数字信号的AD转换器。附图标记515代表对每个光接收元件的光电转换操作产生定时信号的定时信号发生器。隔离体522可以由可以确定半导体芯片503和复眼光学元件512之间的距离的任何部件构成。例如,可以使用具有预定长度的部件,或使用混合有颗粒的粘合剂。
附图标记517代表用作外部电子电路衬底的多层印刷电路板。附图标记520代表用于将电极焊盘513和未示出的多层印刷电路板517上的电极焊盘电连接的粘合线。附图标记521代表用于密封电极焊盘513和粘合线520的***区域的热固或紫外线硬化树脂。在本实施例中,环氧树脂被用作热固或紫外线硬化树脂。代替用粘合线520进行电连接,也可以采用TAB薄膜的电连接。紫外线硬化树脂520被涂覆于图像拾取组件的整个***区域,以使多层印刷电路板上的图像拾取组件安装稳定。附图标记822a和822b代表光接收元件。
作为本发明的半导体器件的图像拾取组件,其特征在于,隔离体522位于复眼光学元件512的外周侧。也就是说,在切割前作为第一衬底的光通过部件501通过隔离体522被粘合在切割为半导体芯片503前作为第二衬底的半导体晶片上,此后,位于光通过部件501下面的隔离体522的区域被切割以形成各个图像拾取组件。
隔离体522因此位于光传送部件501的外周侧。
下面将对本实施例的图像拾取组件的制造方法作更进一步的描述。如图11所示,去红外线滤光器560透过大于80%或更多的具有350nm到630nm范围内的波长的电磁波(如紫外线),而几乎不透过具有250nm或更短或850nm或更长范围内的波长的电磁波(如红外线)。
去红外线滤光器560通过汽相沉积或类似方法形成在光传输部件501的整个表面上,在去红外线滤光器560上形成有阻挡光屏蔽层506。布置阻挡光屏蔽层506为了不将其沿紫外线入射方向叠置在粘合部件509上,这样紫外线硬化环氧树脂可以被充分硬化以形成粘合部件509。阻挡光屏蔽层具有岛状外形。在本发明中,粘合部件509不仅仅局限于紫外线硬化环氧树脂,这样阻挡光屏蔽层506沿紫外线入射方向可叠置在粘合部件509上。在这种情况下,紫外线入射方向是箭头X标出的方向。
半导体芯片503和隔离体522通过相互地移动而粘合在一起,因为粘合结构适于电极焊盘513和外部电子电路通过导线以粘合或类似的方式的电连接。半导体芯片503和隔离体522可以不通过相互地移动而粘合在一起。在这种情况下,复眼光学元件512最好不通过将其从隔离体522移开而设置。
下面将结合附图1B和1C对半导体芯片503作进一步的描述。如图1B所示,复眼光学元件512和复眼光学***503之间,设置有由树脂、玻璃、硅或其他类似的物质制成的隔离体522,以使它们之间保持预定的距离。隔离体522和半导体芯片503可以通过形成绝缘体上硅(SIO)衬底时要使用的粘和工艺而粘合在一起。最好使用包含有铝或铟的粘合金属将它们粘合在一起。凸透镜600a、600b、600c和600d通过复制方法、喷射模塑法、压模方法或其他类似方法形成在光传送部件501上。凸透镜600a-600d是球面菲涅耳凸透镜或圆形轴对称非球面菲涅耳凸透镜,该透镜分别由树脂制成,通过使用树脂,与传统的使用连续图像表面光学***相比可以更可靠的纠正曲线图像表面。
凸透镜600a到600d通过树脂粘合到光传送部件501上。在一些情况下树脂的一部分流到各个凸透镜600a-600d的***区域,如凸透镜600a和600c之间的区域。如果流动的树脂接触到光传输部件的切割表面,在沿树脂从光传送部件501上剥落的方向上进行切割期间,将会有力施加到树脂上。这样,凸透镜600a到600d将变形。因此,流动的树脂最好不接触到光传送部件501的切割表面。
每个阻挡孔810a、810b、810c和810d沿光轴方向的位置决定了光学***的光轴外侧的主光线的位置。因此,从控制各种像差的角度看阻挡位置是非常重要的。由于每个凸透镜600a到600d都形成在图像侧,如果阻挡位于和菲涅耳透镜表面近似的球形表面的中心附近,不同的光学像差将可以被适当纠正。如果色度图像有望被拾取,绿光(G)传输滤光器、红光(R)传输滤光器和蓝光(B)传输滤光器将被设置在如拜耳布图内,沿光轴处于接近每个凸透镜600a到600d位置。如果特别的色度图像或X光图像有望被拾取,将设置特别的色彩滤光器或荧光粉。在该实施例中,虽然未示出,绿光(G)传输滤光器、红光(R)传输滤光器和蓝光(B)传输滤光器被设置在拜耳布图内。
微透镜516和光屏蔽部件508形成在半导体芯片503上。微透镜516将光线会聚在光接收元件上以拾取如低亮度物体的图像。光屏蔽部件508避免由凸透镜600a传输的光和由凸透镜600c传输的光之间的光学串扰的产生。光屏蔽部件位于相邻凸透镜之间。
如果图1C所示的光接收部件822a和其他元件是CMOS传感器,将易于将A/D转换器514和类似元件安装到半导体芯片503上。如果A/D转换器514和类似元件与粘合部件509在半导体芯片503上彼此重叠,半导体芯片503的区域将减小,从而导致成本的降低。
粘合部件509最好与切割线分开一段距离。这样,有可能避免图像拾取组件由于粘合部件509熔化或粘合部件509破碎为小片或切割刀由于摩擦热产生的碳粒子粘到凸透镜600a到600d上而引起的质量降低。
将微透镜设置在光接收区域820a、820b、820c和820d上,以使***透镜如516进一步移向光接收区域的线互连区域的中心。
图1D示出了作为外部电子电路板的多层印刷电路板517,粘合线用于多层印刷电路板层517和电极焊盘513的电连接,热固或紫外线硬化树脂521用于密封电极焊盘513和粘合线520的***区域。
用粘合部件509和热固或紫外线硬化树脂521进行密封可以可靠避免微透镜216的形变和由灰尘、空气中的湿气和铝层的电解腐蚀进入引起的滤光层的形变。
热固或紫外线硬化树脂521涂覆在整个图像拾取组件的外表面,以建立图像拾取组件511在多层印刷电路板层517上的可靠安装。
由于电极焊盘113和多层印刷电路板层517通过粘合线520连接在一起,所以ITO薄膜或通路金属体是不必要的且成本可相应地降低。代替粘合线520,可以使用TAB薄膜。
图2是表示图1C中的光接收元件822a和822b附近区域的放大的横截面示意图。在图2中,附图标记516a和516b代表形成在光接收元件822a和822b上方的微透镜,附图标记823a和823b代表穿过阻挡孔810a和810b的入射光通量。微透镜516a向上偏心于光接收元件822a,而微透镜516b向下偏心于光接收元件822b。
仅光通量823a入射到光接收元件822a,仅光通量823b入射到光接收元件822b。光通量823a和823b相对于光接收元件822a和822b的光接收平面向下和向上的倾斜,并指向阻挡孔810a和810b。
通过适当选择微透镜516a和516b的偏心量,只有希望的光通量入射到每个光接收元件822上。可以设定偏心量这样穿过阻挡孔810a的主光线主要由光接收区域820a接收,穿过阻挡孔810b的主光线主要由光接收区域820b接收,……
参考图3和4,下面将描述处理根据本发明第一实施例的作为半导体器件的图像拾取组件的光接收区域820a到820d中转换的电信号的机理。图3是图像拾取区域和用安装在本实施例的图像拾取组件上的复眼透镜拾取的被摄物图像之间的位置关系的图解。图4是表示图3所示的图像拾取区域被投射时各像素之间的位置关系的图解。在图3中,附图标记320a、320b、320c和320d代表形成在半导体芯片503上的四个光接收元件阵列。为了描述简单,假设光接收元件阵列320a、320b、320c和320d的每个具有8×6像素。像素的数量可根据需要进行选择,不仅仅局限于本实施例。光接收元件阵列320a和320d输出G图像信号,光接收元件阵列320b输出R图像信号,光接收元件阵列320c输出B图像信号。光接收元件阵列320a和320d内的像素用白色方块表示,光接收元件阵列320b内的像素用阴影线方块表示,光接收元件阵列320c内的像素用黑色方块表示。
每个在水平方向上具有一个像素、在垂直方向上具有3个像素的分离区域形成在相邻的光接收元件阵列之间。因此,连接用于输出G图像信号的光接收元件阵列的中心的线的中心具有相同的垂直和水平位置。附图标记351a、351b、351c和351d代表被摄物图像。由于像素被设置在像素移动布图,被摄物图像351a、351b、351c和351d的中心360a、360b、360c和360d朝向所有光接收元件阵列的中心320e偏移了光接收元件阵列320a、320b、320c和320d的中心四分之一像素距离。
由于光接收元件阵列以预定距离反向投射在主侧平面上,从而得到了图4所示的投影。并且在投射侧,光接收元件阵列320a和320d内的反向投射的像素图象以白色方块362a表示,光接收元件阵列320b内的反向投射的像素图象以阴影线方块362b表示,光接收元件阵列320c内的反向投射的像素图象以黑色方块362c表示。
图像的中心360a、360b、360c和360d的反向投射的图像重合于一点361,光接收元件阵列320a、320b、320c和320d内的每个像素图象反向投射,以使各自的像素中心不重合。由于白色方块输出G图像信号,阴影线方块输出R信号,黑色方块输出B信号,因此被摄物可以以与设置在拜耳布图内的具有色彩滤光器的图像拾取装置相同的方式由像素进行采样。
与使用单一图像拾取透镜的图像拾取***相比,半导体芯片503上的设置有用于2×2像素的R、G、B和G色滤光器的拜耳布图可以形成具有被2除的大小的被摄物图像,假设像素间距是固定的。图像拾取透镜的聚焦长度因此缩短了1被2除,即1/2。这样很适合于制造小型摄像机。
下面将对图1A到1D中的图像拾取组件的操作作以简要描述。入射在光学元件512上的物光束穿过阻挡孔810a到810d,并会聚在阻挡孔下方的凸透镜600a到600d上,在半导体芯片503上形成多个被摄物图像。图像通过各光接收元件上的微透镜516被会聚。
由于设置了色彩滤光器,在将光转变为电信号的各光接收元件上形成了四个被摄物图像R、G、B和G。
一种制造根据本发明的作为半导体器件的图像拾取组件的方法将结合图5到图10作以详细描述。图5是根据本发明的第一实施例的半导体制造方法的分解断面透视图。参考图5,附图标记901代表包括隔离体522a和522b的隔离体,附图标记503a和503b代表半导体芯片,附图标记917代表具有形成有透镜、光屏蔽层、未示出的色彩滤光器和类似器件的光传输部件501a和501b的光学元件组。首先,具有形成有凸透镜600a到600d的光传输部件501a和501b的光学元件组917被粘合到隔离体901上。通过沿切割线对半导体芯片503a和503b之间的区域进行切割,形成了具有半导体芯片503a的图像拾取组件和有半导体芯片503b的图像拾取组件。切割区域是在作为第一衬底的光传输部件501下形成空间的区域。切割线可以通过一凹槽被限定,该凹槽在由刻蚀形成的光学元件组917、通过照相平版印刷技术形成的金属标记或以复制形成的树脂突起内。如果在凸透镜600a到600d形成的同时以复制的方法形成树脂突起,制造步骤的数量可以减少。
图6是图5所示的隔离体901的顶视图。隔离体901以分隔线903被分为隔离体522a和522b。隔离体901形成有多个用于导引穿过凸透镜600a到600d的光通量到光接收元件822上的开口902。
图7到10是解释制造根据本实施例的半导体器件的过程的半导体晶片顶视图。图7是粘合有隔离体901的半导体晶片910的顶视图。图8是具有隔离体901的半导体晶片910的顶视图,该隔离体粘合有一个光学元件组917。图9是具有隔离体901的半导体晶片910的顶视图,该隔离体粘合有所有光学元件组917。图10是所有光学元件组917被粘合后所要行的切割过程的横截面示意图。
下面将对根据本发明的半导体器件的制造方法作以详细描述。首先,22个半导体芯片503作为第二衬底形成在半导体晶片910上。每个半导体芯片503具有图1C所示的结构。形成在半导体晶片910上的半导体芯片的数量可以根据所需进行选择。
由于半导体晶片910具有一些翘曲,因此当光学元件组917被粘合时半导体晶片910被吸住,以去除半导体晶片910的翘曲。
在后来半导体晶片910的吸力被释放之后,向半导体晶片910施力以恢复原始形状。该力将使一些光学元件组917彼此发生碰撞,从而可以改变半导体晶片910和光学元件组917之间的距离。为了不改变该距离,最好在相邻半导体芯片503之间形成一些间隙。
半导体晶片的区域有变大的强烈趋势。当光学元件组917粘合到处于吸住状态的半导体晶片910上时,形成在相邻半导体芯片503之间的间隙由助于制造高质量的图像拾取组件。
隔离体901与两个半导体芯片503对准,并粘合到半导体芯片503上的粘合部件509上。箭头J指出了切割线的位置(图7)。
由晶体制成的半导体晶片910具有电学、光学、机械和化学的各向异性特性。通过X光衍***确测定上拉结晶的方位后,晶锭被切割。在切割晶锭之前,柱状晶锭形成有称为方位平面909的竖直部分,该平面表示结晶方位。
如果半导体芯片503的半导体元件图案形成与方位平面909形成一条直线,通过使用形成在光学元件组917和方位平面909上的参考图案可以建立光学元件组917与晶片之间的精确校准。
如果光学元件组917的尺寸被设定为可以被容纳在分步机(stepper)的有效暴露尺寸内的最大尺寸,用一晶片制造的图像拾取组件的数量可以增多,这样从节省成本的角度是有效的。
在隔离体901粘合到半导体芯片503上后,在隔离体901的开口902与相应的凸透镜600对准的状态中,光学元件组917被用热硬化或紫外线硬化环氧树脂粘合。箭头K指明了光学元件组917的分隔线903的位置(图6和8)。
在环氧树脂通过紫外线照射半硬化时,它被压直到形成一预定的间隔。此后,树脂通过热处理被完全硬化以固定光学元件组917和半导体晶片910之间的间隔,从而使被摄物图像清晰地聚焦于光接收元件阵列912。
粘合部件509最好位于与分隔线903或切割线分开一段距离的位置。这样,有可能防止由于熔化的或破碎为小片的环氧树脂或由于切割刀的摩擦热产生的碳粒子粘到凸透镜600a到600d上而引起的图像拾取组件的质量降低。
光学元件组917以类似方式粘合到每个隔离体901上(图9)。
由于硬化过程和缓硬化收缩变化很小所以使用环氧树脂,从而可以削弱应力。在本实施例中,虽然可以使用热硬化树脂作为粘合部件材料,但是最好使用紫外线硬化树脂作为粘合部件材料,因为硬化热硬化树脂所产生的足够的热量可以损坏分别形成在半导体晶片910上的微透镜的印刷涂层、复制品和阻挡光屏蔽层506。
当该区域的去红外线滤光器的光谱透射率被调整到可以传输紫外线时,去红外线滤光器560形成在阻挡光屏蔽的***区域,环氧树脂可以通过来自半导体晶片910前方的紫外线的照射被硬化。
如果在每个半导体芯片503从半导体晶片910上切下之前,光学元件组917被粘合和固定,使得半导体晶片910和光学元件组917平行,即使得半导体晶片910和每个光学元件组之间的距离相等,甚至在每个半导体芯片被切割之前如果光学元件组没有被粘合和固定。因此,光学图像的单侧钝化难以被实现。
最后,半导体晶片910在由沿箭头J指明的位置被切割,隔离体901和光学元件组917在箭头K指明的位置被切割。在对半导体晶片910切割的过程中,可以使用公开在如日本特许公开专利申请NOS.11-345785和2000-061677上的切割加工***或激光加工***。
如图10所示,如果使用切割刀,将从半导体晶片的底部沿箭头J指明的方向只对半导体晶片910进行切割,同时倒入切割水(cutting water)以冷却半导体晶片910。在图10中,附图标记523代表切割刀。
接下来,只有光学元件组917和隔离体901从光学元件组917的顶面上切割下来。
更具体的说,当切割刀523在箭头L所示的方向旋转时,在半导体芯片503被分开之前切割刀在该方向上推进半导体晶片910。如果与凸透镜600a、600b、600c和600d相耦合的树脂层存在于切割线上,一个力将从复眼光学元件512的玻璃衬底上沿剥离树脂层的方向上施加到该树脂层上,凸透镜600a、600b、600c和600d的表面精度将降低。
在本实施例中,由于树脂不存在于切割刀沿其移动的切割线上,巨大的外力将不会施加到凸透镜600a、600b、600c和600d上,从而解决了上述问题。并且,有可能避免由于熔化或破碎为小片的树脂或切割刀523的摩擦热产生的碳粒子粘到凸透镜600a到600d上而引起的图像拾取组件的质量降低。
借助于上述处理过程,半导体晶片910和光学元件组917被分成矩形块,从而得到图1A到1D所示的图像拾取组件511。借助上述切割过程,还可以形成三角形块或六角形块。
如图1D所示,图像拾取组件511连接到多层印刷电路板517上。
在上述实施例中,使用了两个隔离体作为隔离体901,使用了两个复眼光学元件作为光学元件组917。还可以使用三个或四个隔离体和复眼光学元件。为了减少位置对准过程的步骤,隔离体901和类似的部件可以具有类似于半导体晶片910的尺寸,开口902和凸透镜600形成于与半导体晶片910上的每个半导体芯片503相应的位置。
在本实施例中,虽然该图像拾取组件被用作半导体器件的一个例子,但是本实施例还适用于具有形成在半导体晶片910上的电子发射元件和具有形成在相对衬底上诸如荧光粉的光发射元件的图像形成组件,并且其间插有隔离体522。
如上所述,根据本发明,在切割期间,可以避免力施加到隔离体上的第一衬底917上。因此,有可能避免形成在第一衬底上的透镜或类似部件的表面形状发生变化。有可能提供一种易于制造半导体器件如图像拾取组件的方法,而不改变透镜表面形状并且不降低聚焦性能。
[第二实施例]
图12A到12D是根据本发明第二实施例的半导体器件的制造过程的示意图。在图12A到12D中,附图标记910代表具有翘曲的半导体衬底,如其上具有多个半导体芯片的半导体晶片,附图标记950代表用于从其底面吸住半导体晶片910以去除半导体晶片的翘曲的夹具,附图标记917代表作为相对衬底的光学元件组。
在图12A到12D中,早已描述了由与第一实施例的附图标记相同的附图标记标明的相同元件,其描述被省略。如图12A所示,半导体晶片910具有由半导体器件制造过程中形成的钝化膜引起的翘曲。就8英寸晶片来说,该翘曲最高处与最低处之间的高度差大约为0.2mm。具有翘曲的晶片成卷状、鞍状、碗状或其他类似的形状。
为了避免当半导体晶片910底面的吸力被释放时应力的产生,有必要调整每个光学元件组内的光学元件的数量。也就是说,如果半导体晶片910具有翘曲,该翘曲的凸面和凹面曲线具有小到大约两倍于半导体晶片直径的低频率,每个光学元件组的光学元件的数量将变大以覆盖具有多个光学元件组的半导体晶片917。如果半导体晶片910具有翘曲,该翘曲的凸面和凹面曲线对应于大约半导体晶片的直径,每个光学元件组的光学元件的数量将减少以覆盖具有多个光学元件组的半导体晶片917。考虑到光学元件组的尺寸变化,间隔P最好设定为大约10μm到500μm。半导体晶片910的翘曲的频率特性可以通过对表面形状的频率分析得到。通常,晶片的尺寸越大,凸凹曲线的频率越低。因此,当光学元件组917粘合到半导体晶片910上时,使用夹具950半导体晶片910从其底部被吸住,从而去除半导体晶片910的翘曲(图12B)。更具体的说,半导体晶片910通过使用未示出的吸住装置被吸在夹具950上,以使半导体晶片910的整个底部与夹具相接触。在这种情况下,多个隔离体901粘合到半导体晶片910上,并安装位置被对准。接下来,光学元件组917在位置上被对准在光学元件组917上,并通过粘合剂被粘合在上面(图12C)。在粘合剂硬化后,吸力被释放。
隔离体901位于使半导体晶片和光学元件组917粘合到一起的位置。该隔离体可以被省去。
光学元件组917的尺寸根据半导体晶片910的翘曲的大小而定,在半导体晶片910具有较大翘曲时,有必要将隔离体901和光学元件组917做得略小。其原因如下。当半导体晶片910对夹具950的吸力被释放时,产生一力恢复半导体晶片910的原始形状。该力使粘合剂产生潜移现象(creeping phenomenon)。如果使隔离体901和光学元件组917变大,甚至凸起翘曲加大,光学元件组917和半导体晶片910之间的距离将自紧靠半导体晶片910的中心的半导体芯片503处变长。这样,图像拾取组件的聚焦点将移离像素。
相反,如果隔离体901等变大,每个图像拾取组件的复眼光学元件512和半导体芯片503之间的平衡将更容易获得,位置对准的数量将减少。从这点来说,以8英寸晶片为例,如果碗状翘曲具有最高点和最低点之间大约为0.2mm的高度差,并且将形成有约为6mm的侧长度约六百个半导体芯片503,隔离体901和类似部件的尺寸将被设定为平行于侧边的三个半导体芯片的尺寸。图12A到12D示出了多个光学元件组917,也可以仅是设置在半导体片710上一个光学元件917。
多个光学元件组917之间的间隔P根据半导体衬底的翘曲的大小而设定,以避免半导体晶片910,和光学元件组917之间的距离,当半导体晶片910对夹具950的吸力释放时,多个光学元件组917彼此靠近,由潜移现象引起粘合层的伸长或剥落而引起的改变(图12D)。由于半导体晶片有变大的趋势,因此当光学元件组917粘合到处于吸住状态的半导体晶片910上时,相邻半导体芯片间的间隔P有助于制造高质量的图像拾取组件。可以使用如图1A所示的光学元和如图5所示件光学元件组517。图5所示的光学元件组517具有两个光学元件。将从光学元件组上切割下来的光学元件的数量可以由需要决定。
下面参考图13和14,描述光学元件的另一些实施例。
图13是光学元件组962的顶视图。在图13中,附图标记963代表透镜。光学元件组962具有十字形状。通过使用该光学元件组962,可以制造每个都具有一个透镜的五个图像拾取组件。透镜963之间的间隔与未示出的半导体晶片910上的半导体芯片的间隔相同,以使每个图像拾取组件都具有粘合到半导体晶片910上的光学元件组962的透镜。
图14是光学元件组964的顶视图。在图14中,附图标记965代表透镜。光学元件组964具有矩形形状。通过使用该光学元件组964,可以制造每个都具有一个透镜的四个图像拾取组件。透镜965之间的间隔与未示出的半导体晶片910上的半导体芯片的间隔相同,以使每个图像拾取组件都具有粘合到半导体晶片910上的光学元件组964的透镜。
光学元件组的形状并不局限于十字形或矩形,它还可以是T字形、I字形、L形或其他类似形状。
下面参考图15到17,进一步描述根据本实施例的半导体器件的制造过程。
图15是具有半导体芯片的半导体晶片平面示意图。在图15中,附图标记960代表半导体晶片,附图标记961代表半导体芯片。
图16是图15示出的半导体晶片的平面示意图,该晶片上粘合有图13和14示出的光学元件组。
图17是其全部表面上安装有光学元件组的半导体晶片的平面示意图。
通常,半导体晶片960形成有尽可能多的半导体芯片961,如图15所示。然而,如图7等的描述,如果光学元件组917和隔离体901粘合到两个半导体芯片503上,在某种情况下,某些半导体芯片961将不能被使用。这些半导体芯片961是形成在除了方位平面附近区域的半导体晶片960的周边区域上的芯片。
为了避免出现这一点,如图16所示,光学元件组963以锯齿方式设置,并以光学元件组965的角与光学元件组963的凸角对准的方式粘合到半导体片上。如图17所示,光学元件组965和963位于半导体晶片960上的所有半导体芯片961上。考虑到半导体晶片960的翘曲,间隔Q沿其径向形成在相邻的光学元件组963之间。在本实施例中,为了描述简单,使用了图13和14所示的光学元件组963和965。然而,如图17所示,一些光学元件组963和965不能被使用。为了避免这一点,在实际情况中,与形成在半导体晶片960上的半导体芯片961具有一致形状的光学元件组被用于制造图像拾取组件。
如上所述,根据本发明,提供了一种半导体制造方法,该方法使半导体衬底和相对衬底即使在半导体衬底从夹具(基底)上取下来的时候趋于恢复原始翘曲的情况下也难于剥落。
Claims (13)
1.一半导体器件,该器件通过切割粘合在隔离体上的第一衬底和第二衬底而形成,其中:
隔离***于切割后的第一衬底的一端;
第二衬底是和一个或多个光接收元件形成的半导体晶片;
第一衬底具有将光线会聚在上述光接收元件上的一光学元件或一光学元件组。
2.根据权利要求1所述的半导体器件,其中,第一衬底具有含有多个透镜的复眼光学元件。
3.一种半导体器件制造方法,包括:
将第一衬底和第二衬底通过隔离体粘合在一起的步骤;
对第一和第二衬底进行切割的步骤,
其中,上述切割第一衬底的步骤中,在隔离***于第一衬底的下面的位置对第一衬底进行切割。
4.根据权利要求3的半导体器件制造方法,其中,第二衬底形成有光接收元件。
5.根据权利要求3的半导体器件制造方法,其中,第一衬底形成有多个透镜。
6.一种半导体器件制造方法,包括:
在去除翘曲的条件下将半导体衬底保持在基底上的步骤;
用根据半导体衬底的翘曲而调整的尺寸将相对衬底粘合到半导体衬底上的步骤;然后
对相对衬底进行切割的步骤。
7.根据权利要求6的半导体器件制造方法,包括:将多个相对衬底粘合到半导体衬底上的步骤,该多个相对衬底的间隙相应于半导体衬底翘曲的尺寸。
8.根据权利要求6的半导体器件制造方法,其中,所述将相对衬底粘合到半导体衬底上的步骤使用了隔离体,该隔离***于相对衬底和半导体衬底之间。
9.根据权利要求6的半导体器件制造方法,其中,所述对相对衬底进行切割的步骤对隔离***于相对衬底的下面的相对衬底的区域进行切割。
10.根据权利要求6的半导体器件制造方法,其中,半导体衬底形成有一个或多个光接收元件,相对衬底形成有用于将光线会聚在该光接收元件上的光学元件或光学元件组。
11.根据权利要求6的半导体器件制造方法,其中,相对衬底形成有含有多个透镜的复眼元件。
12.根据权利要求6的半导体器件制造方法,其中,半导体衬底是半导体晶片。
13.根据权利要求6所述的半导体器件制造方法,其中,相对衬底具有矩形、十字形、T字形、I字形、L形或多边形形状。
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CN104691123A (zh) * | 2015-03-18 | 2015-06-10 | 苏州五方光电科技有限公司 | 一种蓝玻璃加工工艺 |
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TW554544B (en) | 2003-09-21 |
EP1244151A3 (en) | 2007-10-10 |
US6893941B2 (en) | 2005-05-17 |
KR100539838B1 (ko) | 2005-12-28 |
KR100499317B1 (ko) | 2005-07-04 |
US6635941B2 (en) | 2003-10-21 |
KR20020075262A (ko) | 2002-10-04 |
US20040023469A1 (en) | 2004-02-05 |
CN1279627C (zh) | 2006-10-11 |
EP1244151A2 (en) | 2002-09-25 |
KR20040103857A (ko) | 2004-12-09 |
US20020163054A1 (en) | 2002-11-07 |
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