JP4800125B2 - 半導体集積回路装置とその製造方法 - Google Patents
半導体集積回路装置とその製造方法 Download PDFInfo
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- JP4800125B2 JP4800125B2 JP2006178434A JP2006178434A JP4800125B2 JP 4800125 B2 JP4800125 B2 JP 4800125B2 JP 2006178434 A JP2006178434 A JP 2006178434A JP 2006178434 A JP2006178434 A JP 2006178434A JP 4800125 B2 JP4800125 B2 JP 4800125B2
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- Prior art keywords
- light receiving
- wiring structure
- integrated circuit
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011229 interlayer Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 41
- 238000009792 diffusion process Methods 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
10、50 光検出器
11、51 受光部
12、52 配線構造
13A、53A 信号線
13B、53B 電圧印加線
14、54 半導体基板
15、55 開口部
16、56 第1層間絶縁膜
17、57 第1金属層
18、58 第2層間絶縁膜
19、59 第2金属層
20、60 第3層間絶縁膜
21 ウェハ
33、73 分離拡散層
34、74 PD拡散層
Claims (6)
- 受光部を含む半導体基板において、
前記半導体基板上に、平面形状で角部を成すように前記受光部を取り囲む配線構造と、
前記半導体基板及び前記配線構造上にSOG膜で形成された層間絶縁膜と、
前記受光部上に形成された前記層間絶縁膜をエッチングして形成された開口部と、
を具備する半導体集積回路装置において、
前記開口部のうち前記角部に対応する部分が面取りされていることを特徴とする半導体集積回路装置。 - 請求項1に記載の半導体集積回路装置において、前記角部に対応する前記開口部の形状は辺であることを特徴とする半導体集積回路装置。
- 請求項1に記載の半導体集積回路装置において、前記角部に対応する前記開口部の形状は円弧であることを特徴とする半導体集積回路装置。
- 受光部を含む半導体基板において、
前記半導体基板上に、平面形状で角部を成すように前記受光部を取り囲む配線構造を形成する工程と、
前記半導体基板及び前記配線構造上に、スピンコートによりSOG膜で形成された層間絶縁膜を形成する工程と、
前記受光部上に形成された前記層間絶縁膜をエッチングして開口部を形成する工程と、
を具備する半導体集積回路装置の製造方法において、
前記開口部は、平面形状において、前記角部に対応する部分が面取りされる形状に開口することを特徴とする半導体集積回路装置の製造方法。 - 請求項4に記載の半導体集積回路装置の製造方法において、前記角部に対応する前記開口部の形状は辺であることを特徴とする半導体集積回路装置の製造方法。
- 請求項4に記載の半導体集積回路装置の製造方法において、前記角部に対応する前記開口部の形状は円弧であることを特徴とする半導体集積回路装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006178434A JP4800125B2 (ja) | 2006-06-28 | 2006-06-28 | 半導体集積回路装置とその製造方法 |
US11/808,235 US8102016B2 (en) | 2006-06-28 | 2007-06-07 | Semiconductor integrated circuit device and method for manufacturing same |
CNB200710110012XA CN100508202C (zh) | 2006-06-28 | 2007-06-12 | 半导体集成电路装置及其制造方法 |
TW096122992A TW200811943A (en) | 2006-06-28 | 2007-06-26 | Semiconductor integrated circuit device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006178434A JP4800125B2 (ja) | 2006-06-28 | 2006-06-28 | 半導体集積回路装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008010577A JP2008010577A (ja) | 2008-01-17 |
JP4800125B2 true JP4800125B2 (ja) | 2011-10-26 |
Family
ID=38875727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006178434A Expired - Fee Related JP4800125B2 (ja) | 2006-06-28 | 2006-06-28 | 半導体集積回路装置とその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8102016B2 (ja) |
JP (1) | JP4800125B2 (ja) |
CN (1) | CN100508202C (ja) |
TW (1) | TW200811943A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7943054B2 (en) * | 2007-03-27 | 2011-05-17 | Sanyo Electric Co., Ltd. | Method for manufacturing semiconductor integrated circuit device |
US8237832B2 (en) * | 2008-05-30 | 2012-08-07 | Omnivision Technologies, Inc. | Image sensor with focusing interconnections |
JP5967944B2 (ja) | 2012-01-18 | 2016-08-10 | キヤノン株式会社 | 固体撮像装置およびカメラ |
JP5966592B2 (ja) * | 2012-05-15 | 2016-08-10 | オムロン株式会社 | 光電センサ |
CN110556390A (zh) | 2018-05-31 | 2019-12-10 | 松下知识产权经营株式会社 | 摄像装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130299Y2 (ja) * | 1979-03-23 | 1986-09-05 | ||
JPH06140617A (ja) * | 1992-10-23 | 1994-05-20 | Sony Corp | 固体撮像装置 |
JPH0750401A (ja) * | 1993-08-06 | 1995-02-21 | Sony Corp | 固体撮像素子及びその製造方法 |
JPH11223532A (ja) * | 1998-02-04 | 1999-08-17 | Mitsutoyo Corp | 集積化デバイス及びこれを用いたエンコーダ |
JP3506314B2 (ja) * | 1998-07-28 | 2004-03-15 | 日本ビクター株式会社 | 集積化受光素子の製造方法 |
JP3584196B2 (ja) * | 1999-02-25 | 2004-11-04 | キヤノン株式会社 | 受光素子及びそれを有する光電変換装置 |
JP4131059B2 (ja) | 1999-08-23 | 2008-08-13 | ソニー株式会社 | 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法 |
JP4208172B2 (ja) * | 2000-10-31 | 2009-01-14 | シャープ株式会社 | フォトダイオードおよびそれを用いた回路内蔵受光素子 |
JP2002246363A (ja) * | 2001-02-21 | 2002-08-30 | Sony Corp | 半導体装置の製造方法 |
JP2002277656A (ja) * | 2001-03-19 | 2002-09-25 | Pioneer Electronic Corp | 光集積回路およびその製造方法 |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
JP4088190B2 (ja) | 2002-05-21 | 2008-05-21 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4216270B2 (ja) * | 2004-06-30 | 2009-01-28 | 三星エスディアイ株式会社 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
US7511323B2 (en) * | 2005-08-11 | 2009-03-31 | Aptina Imaging Corporation | Pixel cells in a honeycomb arrangement |
JP2007149842A (ja) * | 2005-11-25 | 2007-06-14 | Sanyo Electric Co Ltd | 半導体装置 |
-
2006
- 2006-06-28 JP JP2006178434A patent/JP4800125B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-07 US US11/808,235 patent/US8102016B2/en active Active
- 2007-06-12 CN CNB200710110012XA patent/CN100508202C/zh not_active Expired - Fee Related
- 2007-06-26 TW TW096122992A patent/TW200811943A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20080001242A1 (en) | 2008-01-03 |
JP2008010577A (ja) | 2008-01-17 |
TW200811943A (en) | 2008-03-01 |
US8102016B2 (en) | 2012-01-24 |
CN100508202C (zh) | 2009-07-01 |
CN101097933A (zh) | 2008-01-02 |
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