CN103221331B - 用于微机电***的密封封装 - Google Patents
用于微机电***的密封封装 Download PDFInfo
- Publication number
- CN103221331B CN103221331B CN201180055792.7A CN201180055792A CN103221331B CN 103221331 B CN103221331 B CN 103221331B CN 201180055792 A CN201180055792 A CN 201180055792A CN 103221331 B CN103221331 B CN 103221331B
- Authority
- CN
- China
- Prior art keywords
- mems
- layer
- microelectromechaniclayer
- stress
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 229910000679 solder Inorganic materials 0.000 claims description 29
- 230000006698 induction Effects 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 158
- 238000005538 encapsulation Methods 0.000 description 54
- 238000007789 sealing Methods 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 239000010703 silicon Substances 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 30
- 238000007514 turning Methods 0.000 description 27
- 230000009467 reduction Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 9
- 230000008030 elimination Effects 0.000 description 9
- 238000003379 elimination reaction Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0016—Protection against shocks or vibrations, e.g. vibration damping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38424410P | 2010-09-18 | 2010-09-18 | |
US38424210P | 2010-09-18 | 2010-09-18 | |
US38424310P | 2010-09-18 | 2010-09-18 | |
US61/384,243 | 2010-09-18 | ||
US61/384,244 | 2010-09-18 | ||
US61/384,242 | 2010-09-18 | ||
PCT/US2011/052060 WO2012037537A2 (en) | 2010-09-18 | 2011-09-18 | Sealed packaging for microelectromechanical systems |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103221331A CN103221331A (zh) | 2013-07-24 |
CN103221331B true CN103221331B (zh) | 2016-02-03 |
Family
ID=45832284
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180055792.7A Active CN103221331B (zh) | 2010-09-18 | 2011-09-18 | 用于微机电***的密封封装 |
CN201180055794.6A Active CN103221332B (zh) | 2010-09-18 | 2011-09-18 | 减小微机电***上的应力的封装 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180055794.6A Active CN103221332B (zh) | 2010-09-18 | 2011-09-18 | 减小微机电***上的应力的封装 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9856132B2 (zh) |
EP (2) | EP2616388A4 (zh) |
KR (2) | KR20130052652A (zh) |
CN (2) | CN103221331B (zh) |
WO (2) | WO2012037537A2 (zh) |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007147137A2 (en) | 2006-06-15 | 2007-12-21 | Sitime Corporation | Stacked die package for mems resonator system |
US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
ITTO20110688A1 (it) * | 2011-07-28 | 2013-01-29 | St Microelectronics Srl | Giroscopio microelettromeccanico con funzione di autocalibrazione e metodo di calibrazione di un giroscopio microelettromeccanico |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9695036B1 (en) * | 2012-02-02 | 2017-07-04 | Sitime Corporation | Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same |
US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
US9200973B2 (en) | 2012-06-28 | 2015-12-01 | Intel Corporation | Semiconductor package with air pressure sensor |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
US20140090485A1 (en) * | 2012-10-02 | 2014-04-03 | Robert Bosch Gmbh | MEMS Pressure Sensor Assembly |
US8749036B2 (en) | 2012-11-09 | 2014-06-10 | Analog Devices, Inc. | Microchip with blocking apparatus and method of fabricating microchip |
US9676614B2 (en) * | 2013-02-01 | 2017-06-13 | Analog Devices, Inc. | MEMS device with stress relief structures |
US9726689B1 (en) * | 2013-03-15 | 2017-08-08 | Hanking Electronics Ltd. | Wafer level micro-electro-mechanical systems package with accelerometer and gyroscope |
US9631997B2 (en) * | 2013-05-14 | 2017-04-25 | Infineon Technologies Ag | Apparatus for measuring a pressure, a method for manufacturing an apparatus for measuring a pressure and a battery |
CN104244152B (zh) * | 2013-06-13 | 2018-11-06 | 无锡芯奥微传感技术有限公司 | 微机电***麦克风封装及封装方法 |
DE102013211555A1 (de) * | 2013-06-19 | 2014-12-24 | Robert Bosch Gmbh | Bauelement mit Mitteln zum Reduzieren von montagebedingten mechanischen Spannungen und Verfahren zu dessen Herstellung |
US20140374848A1 (en) * | 2013-06-24 | 2014-12-25 | Wen Shi Koh | Semiconductor sensor device with metal lid |
WO2015042700A1 (en) | 2013-09-24 | 2015-04-02 | Motion Engine Inc. | Mems components and method of wafer-level manufacturing thereof |
US9508663B2 (en) * | 2013-07-24 | 2016-11-29 | Invensense, Inc. | Assembly and packaging of MEMS device |
WO2015013827A1 (en) | 2013-08-02 | 2015-02-05 | Motion Engine Inc. | Mems motion sensor for sub-resonance angular rate sensing |
US9090454B2 (en) * | 2013-08-27 | 2015-07-28 | Freescale Semiconductor, Inc. | Sequential wafer bonding |
US9190352B2 (en) | 2013-11-21 | 2015-11-17 | Freescale Semiconductor, Inc. | Multi-die sensor device |
US9242854B2 (en) * | 2013-12-20 | 2016-01-26 | Intel Corporation | Hermetic encapsulation for microelectromechanical systems (MEMS) devices |
DE102016206791A1 (de) * | 2016-04-21 | 2017-10-26 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einer entkoppelten mikromechanischen Struktur |
WO2015103688A1 (en) * | 2014-01-09 | 2015-07-16 | Motion Engine Inc. | Integrated mems system |
DE102014210006A1 (de) * | 2014-02-18 | 2015-08-20 | Robert Bosch Gmbh | Sensoreinheit und Verfahren zur Herstellung einer Sensoreinheit |
US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
US9355997B2 (en) | 2014-03-12 | 2016-05-31 | Invensas Corporation | Integrated circuit assemblies with reinforcement frames, and methods of manufacture |
US9499397B2 (en) * | 2014-03-31 | 2016-11-22 | Freescale Semiconductor, Inc. | Microelectronic packages having axially-partitioned hermetic cavities and methods for the fabrication thereof |
US20170030788A1 (en) | 2014-04-10 | 2017-02-02 | Motion Engine Inc. | Mems pressure sensor |
US9165793B1 (en) | 2014-05-02 | 2015-10-20 | Invensas Corporation | Making electrical components in handle wafers of integrated circuit packages |
WO2015184531A1 (en) | 2014-06-02 | 2015-12-10 | Motion Engine Inc. | Multi-mass mems motion sensor |
US9741649B2 (en) | 2014-06-04 | 2017-08-22 | Invensas Corporation | Integrated interposer solutions for 2D and 3D IC packaging |
DE102014210934A1 (de) * | 2014-06-06 | 2015-12-17 | Robert Bosch Gmbh | Vertikal hybrid integriertes MEMS-ASIC-Bauteil mit Stressentkopplungsstruktur |
DE102014211188A1 (de) * | 2014-06-12 | 2015-12-17 | Robert Bosch Gmbh | Vertikal hybrid integriertes Bauteil mit Interposer zur Stressentkopplung einer MEMS-Struktur und Verfahren zu dessen Herstellung |
US9412806B2 (en) | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
US9252127B1 (en) | 2014-07-10 | 2016-02-02 | Invensas Corporation | Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture |
US9731959B2 (en) * | 2014-09-25 | 2017-08-15 | Analog Devices, Inc. | Integrated device packages having a MEMS die sealed in a cavity by a processor die and method of manufacturing the same |
US10167189B2 (en) | 2014-09-30 | 2019-01-01 | Analog Devices, Inc. | Stress isolation platform for MEMS devices |
DE102014221364A1 (de) * | 2014-10-21 | 2016-04-21 | Robert Bosch Gmbh | Mikroelektronische Bauelementanordnung mit einer Mehrzahl von Substraten und entsprechendes Herstellungsverfahren |
CA3004760A1 (en) | 2014-12-09 | 2016-06-16 | Motion Engine Inc. | 3d mems magnetometer and associated methods |
US9533878B2 (en) | 2014-12-11 | 2017-01-03 | Analog Devices, Inc. | Low stress compact device packages |
CA3220839A1 (en) | 2015-01-15 | 2016-07-21 | Motion Engine Inc. | 3d mems device with hermetic cavity |
WO2016145535A1 (en) * | 2015-03-18 | 2016-09-22 | Motion Engine Inc. | Multiple degree of freedom mems sensor chip and method for fabricating the same |
CN105036067A (zh) * | 2015-05-29 | 2015-11-11 | 中国科学院电子学研究所 | Mems传感器倒装叠层封装结构及其制备方法 |
US9478504B1 (en) | 2015-06-19 | 2016-10-25 | Invensas Corporation | Microelectronic assemblies with cavities, and methods of fabrication |
US10131538B2 (en) | 2015-09-14 | 2018-11-20 | Analog Devices, Inc. | Mechanically isolated MEMS device |
US10330696B2 (en) * | 2016-03-24 | 2019-06-25 | Northrop Grumman Systems Corporation | Accelerometer sensor system |
DE102016205793A1 (de) * | 2016-04-07 | 2017-03-02 | Robert Bosch Gmbh | Mikromechanisches System |
ITUA20162957A1 (it) | 2016-04-28 | 2017-10-28 | St Microelectronics Srl | Modulo di trasduzione multi-dispositivo, apparecchiatura includente il modulo di trasduzione e metodo di fabbricazione del modulo di trasduzione |
WO2017191365A1 (en) | 2016-05-02 | 2017-11-09 | Teknologian Tutkimuskeskus Vtt Oy | Mechanically decoupled surface micromechanical element and method for manufacturing the same |
EP3243793B1 (en) | 2016-05-10 | 2018-11-07 | ams AG | Sensor assembly and arrangement and method for manufacturing a sensor assembly |
US10190925B2 (en) * | 2016-07-18 | 2019-01-29 | Honeywell International Inc. | Low cost overmolded leadframe force sensor with multiple mounting positions |
CN106335868A (zh) * | 2016-08-31 | 2017-01-18 | 歌尔股份有限公司 | 一种mems芯片集成的封装结构 |
EP3301072B1 (en) | 2016-09-30 | 2024-02-21 | Sciosense B.V. | Semiconductor device and method for forming a semiconductor device |
US10134690B2 (en) | 2016-10-27 | 2018-11-20 | Intel Corporation | Floating package stiffener |
US10549985B2 (en) * | 2016-11-25 | 2020-02-04 | Infineon Technologies Ag | Semiconductor package with a through port for sensor applications |
CN106744646A (zh) * | 2016-12-20 | 2017-05-31 | 苏州晶方半导体科技股份有限公司 | Mems芯片封装结构以及封装方法 |
JP2018112466A (ja) * | 2017-01-11 | 2018-07-19 | ソニーセミコンダクタソリューションズ株式会社 | センサデバイス及び電子機器 |
US20190010046A1 (en) * | 2017-07-06 | 2019-01-10 | China Wafer Level Csp Co., Ltd. | Packaging structure and packaging method of mems chip and asic chip |
US10626010B2 (en) * | 2017-11-29 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding process for forming semiconductor device structure |
US10370244B2 (en) | 2017-11-30 | 2019-08-06 | Infineon Technologies Ag | Deposition of protective material at wafer level in front end for early stage particle and moisture protection |
KR102620566B1 (ko) | 2018-09-27 | 2024-01-03 | 삼성전자주식회사 | 반도체 패키지, 이를 포함하는 스토리지 장치 및 반도체 패키지의 동작 방법 |
CN109344507A (zh) * | 2018-09-30 | 2019-02-15 | 广芯微电子(广州)股份有限公司 | 一种节省芯片面积的布局结构及制备方法 |
KR102165882B1 (ko) * | 2018-12-28 | 2020-10-14 | 주식회사 제이피드림 | 박막 패키지 및 그의 형성방법 |
CN112444238A (zh) * | 2019-08-16 | 2021-03-05 | 北京小米移动软件有限公司 | 加速度陀螺传感器 |
US11296005B2 (en) | 2019-09-24 | 2022-04-05 | Analog Devices, Inc. | Integrated device package including thermally conductive element and method of manufacturing same |
US11616027B2 (en) | 2019-12-17 | 2023-03-28 | Analog Devices International Unlimited Company | Integrated circuit packages to minimize stress on a semiconductor die |
US11417611B2 (en) | 2020-02-25 | 2022-08-16 | Analog Devices International Unlimited Company | Devices and methods for reducing stress on circuit components |
US11981560B2 (en) | 2020-06-09 | 2024-05-14 | Analog Devices, Inc. | Stress-isolated MEMS device comprising substrate having cavity and method of manufacture |
CN114188311A (zh) * | 2020-09-15 | 2022-03-15 | 联华电子股份有限公司 | 半导体结构 |
DE102020211741A1 (de) | 2020-09-21 | 2022-03-24 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanischer Sensor |
CN112158792B (zh) * | 2020-09-22 | 2024-07-02 | 浙江大学 | 一种适用于mems加速度传感器芯片的低应力封装结构 |
CN113411732A (zh) * | 2021-07-28 | 2021-09-17 | 成都纤声科技有限公司 | 麦克风封装结构、耳机和电子设备 |
US20230092132A1 (en) * | 2021-09-23 | 2023-03-23 | Texas Instruments Incorporated | Wafer level processing for microelectronic device package with cavity |
WO2023146845A1 (en) * | 2022-01-25 | 2023-08-03 | Analog Devices, Inc. | Stress isolation for integrated circuit package integration |
CN114823370B (zh) * | 2022-05-10 | 2022-10-14 | 山东汉旗科技有限公司 | 指纹识别芯片封装结构及其封装的方法 |
DE102022209451A1 (de) * | 2022-09-09 | 2024-03-14 | Carl Zeiss Smt Gmbh | Mikroelektromechanische Vorrichtung |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101171665A (zh) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | 晶片封装环境中制作ai/ge键合的方法及由其生产的产品 |
CN101316462A (zh) * | 2007-06-01 | 2008-12-03 | 财团法人工业技术研究院 | 微机电***麦克风封装体及其封装组件 |
CN101459866A (zh) * | 2007-12-14 | 2009-06-17 | 财团法人工业技术研究院 | 微机电麦克风模块与制作方法 |
CN101519183A (zh) * | 2008-01-31 | 2009-09-02 | 台湾积体电路制造股份有限公司 | 具有集成电路管芯的微机电***封装 |
CN101638211A (zh) * | 2008-08-01 | 2010-02-03 | 财团法人工业技术研究院 | 整合型立体堆叠封装结构及其制造方法 |
Family Cites Families (328)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3231729A (en) | 1961-03-31 | 1966-01-25 | Systems Inc Comp | Dynamic storage analog computer |
US4511848A (en) | 1983-06-15 | 1985-04-16 | Watson Industries, Inc. | Synchronous AM demodulator with quadrature signal cancellation |
US5354695A (en) | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US4896156A (en) | 1988-10-03 | 1990-01-23 | General Electric Company | Switched-capacitance coupling networks for differential-input amplifiers, not requiring balanced input signals |
TW520072U (en) | 1991-07-08 | 2003-02-01 | Samsung Electronics Co Ltd | A semiconductor device having a multi-layer metal contact |
DE4142101A1 (de) | 1991-11-28 | 1993-06-03 | Lueder Ernst Prof Dr Ing | Druckmessanordnung mit hoher linearitaet |
EP0547742B1 (en) | 1991-12-19 | 1995-12-13 | Motorola, Inc. | Triaxial accelerometer |
US5491604A (en) | 1992-12-11 | 1996-02-13 | The Regents Of The University Of California | Q-controlled microresonators and tunable electronic filters using such resonators |
FR2700003B1 (fr) | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu. |
WO1995003534A1 (de) | 1993-07-24 | 1995-02-02 | Endress + Hauser Gmbh + Co. | Kapazitive drucksensoren mit hoher linearität |
US5426970A (en) | 1993-08-02 | 1995-06-27 | New Sd, Inc. | Rotation rate sensor with built in test circuit |
US5481914A (en) | 1994-03-28 | 1996-01-09 | The Charles Stark Draper Laboratory, Inc. | Electronics for coriolis force and other sensors |
US5703292A (en) | 1994-03-28 | 1997-12-30 | The Charles Stark Draper Laboratory, Inc. | Sensor having an off-frequency drive scheme and a sense bias generator utilizing tuned circuits |
US5765046A (en) | 1994-08-31 | 1998-06-09 | Nikon Corporation | Piezoelectric vibration angular velocity meter and camera using the same |
JPH0989927A (ja) | 1995-09-28 | 1997-04-04 | Zexel Corp | 多軸加速度センサ |
SE9500729L (sv) | 1995-02-27 | 1996-08-28 | Gert Andersson | Anordning för mätning av vinkelhastighet i enkristallint material samt förfarande för framställning av sådan |
US5656778A (en) | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
US5659195A (en) | 1995-06-08 | 1997-08-19 | The Regents Of The University Of California | CMOS integrated microsensor with a precision measurement circuit |
US5760465A (en) * | 1996-02-01 | 1998-06-02 | International Business Machines Corporation | Electronic package with strain relief means |
JP3125675B2 (ja) | 1996-03-29 | 2001-01-22 | 三菱電機株式会社 | 容量型センサインターフェース回路 |
JPH09318649A (ja) | 1996-05-30 | 1997-12-12 | Texas Instr Japan Ltd | 複合センサ |
US5992233A (en) | 1996-05-31 | 1999-11-30 | The Regents Of The University Of California | Micromachined Z-axis vibratory rate gyroscope |
JPH10239347A (ja) | 1997-02-28 | 1998-09-11 | Japan Aviation Electron Ind Ltd | 運動センサ |
EP0871213A3 (en) | 1997-03-27 | 1999-03-03 | Siemens Aktiengesellschaft | Method for producing vias having variable sidewall profile |
JP3050161B2 (ja) | 1997-04-18 | 2000-06-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
CN1206110A (zh) | 1997-07-14 | 1999-01-27 | 利顿***有限公司 | 惯性传感器的信号处理*** |
KR100326878B1 (ko) | 1997-08-05 | 2002-05-09 | 니시무로 타이죠 | 증폭회로 |
JP3753209B2 (ja) | 1997-08-27 | 2006-03-08 | アイシン精機株式会社 | 角速度センサ |
JPH11352143A (ja) | 1998-04-06 | 1999-12-24 | Matsushita Electric Ind Co Ltd | 加速度センサ |
US6253612B1 (en) | 1998-06-05 | 2001-07-03 | Integrated Micro Instruments, Inc. | Generation of mechanical oscillation applicable to vibratory rate gyroscopes |
JP3882972B2 (ja) | 1998-06-18 | 2007-02-21 | アイシン精機株式会社 | 角速度センサ |
JP3882973B2 (ja) | 1998-06-22 | 2007-02-21 | アイシン精機株式会社 | 角速度センサ |
JP2000046560A (ja) | 1998-07-31 | 2000-02-18 | Aisin Seiki Co Ltd | 角速度センサ |
US6236096B1 (en) | 1998-10-06 | 2001-05-22 | National Science Council Of Republic Of China | Structure of a three-electrode capacitive pressure sensor |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
JP3363862B2 (ja) | 1999-01-22 | 2003-01-08 | キヤノン株式会社 | ジャイロ、それを備えたカメラ、レンズ及び自動車 |
DE19910415B4 (de) | 1999-03-10 | 2010-12-09 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Abstimmen eines ersten Oszillators mit einem zweiten Oszillator |
DE60041472D1 (de) | 1999-05-28 | 2009-03-19 | Alps Electric Co Ltd | Anregungsvorrichtung eines piezoelektrischen Vibrators |
US7051590B1 (en) | 1999-06-15 | 2006-05-30 | Analog Devices Imi, Inc. | Structure for attenuation or cancellation of quadrature error |
US6516651B1 (en) | 1999-07-22 | 2003-02-11 | Analog Devices, Inc. | Coriolis effect transducer |
US6522762B1 (en) | 1999-09-07 | 2003-02-18 | Microtronic A/S | Silicon-based sensor system |
US6230566B1 (en) | 1999-10-01 | 2001-05-15 | The Regents Of The University Of California | Micromachined low frequency rocking accelerometer with capacitive pickoff |
US6301965B1 (en) | 1999-12-14 | 2001-10-16 | Sandia Corporation | Microelectromechanical accelerometer with resonance-cancelling control circuit including an idle state |
IT1314296B1 (it) | 1999-12-21 | 2002-12-09 | St Microelectronics Srl | Struttura resistiva integrata su un substrato semiconduttore |
US6629448B1 (en) | 2000-02-25 | 2003-10-07 | Seagate Technology Llc | In-situ testing of a MEMS accelerometer in a disc storage system |
US6370937B2 (en) | 2000-03-17 | 2002-04-16 | Microsensors, Inc. | Method of canceling quadrature error in an angular rate sensor |
JP4729801B2 (ja) | 2000-03-17 | 2011-07-20 | アイシン精機株式会社 | 振動子駆動装置及び振動子駆動装置を備えた角速度センサ |
US6390905B1 (en) | 2000-03-31 | 2002-05-21 | Speedfam-Ipec Corporation | Workpiece carrier with adjustable pressure zones and barriers |
AU2001253093A1 (en) | 2000-04-04 | 2001-10-15 | Rosemount Aerospace Inc. | Three axis accelerometer |
US6366468B1 (en) | 2000-04-28 | 2002-04-02 | Hewlett-Packard Company | Self-aligned common carrier |
US6214644B1 (en) | 2000-06-30 | 2001-04-10 | Amkor Technology, Inc. | Flip-chip micromachine package fabrication method |
US6988408B2 (en) | 2000-07-13 | 2006-01-24 | Dong-Il Cho | Surface/bulk micromachined single-crystalline silicon micro-gyroscope |
US7523537B1 (en) | 2000-07-13 | 2009-04-28 | Custom Sensors & Technologies, Inc. | Method of manufacturing a tuning fork with reduced quadrature errror and symmetrical mass balancing |
US7083997B2 (en) | 2000-08-03 | 2006-08-01 | Analog Devices, Inc. | Bonded wafer optical MEMS process |
US6553835B1 (en) | 2000-09-15 | 2003-04-29 | Bei Technologies, Inc. | Inertial rate sensor and method with improved clocking |
US6501282B1 (en) | 2000-09-29 | 2002-12-31 | Rockwell Automation Technologies, Inc. | Highly sensitive capacitance comparison circuit |
US7166910B2 (en) | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
DE10059775C2 (de) | 2000-12-01 | 2003-11-27 | Hahn Schickard Ges | Verfahren und Vorrichtung zur Verarbeitung von analogen Ausgangssignalen von kapazitiven Sensoren |
US7196599B2 (en) | 2000-12-11 | 2007-03-27 | Dabbaj Rad H | Electrostatic device |
FR2819064B1 (fr) | 2000-12-29 | 2003-04-04 | St Microelectronics Sa | Regulateur de tension a stabilite amelioree |
WO2002087083A1 (en) | 2001-04-18 | 2002-10-31 | The Charles Stark Draper Laboratory, Inc. | Digital method and system for determining the instantaneous phase and amplitude of a vibratory accelerometer and other sensors |
SG106612A1 (en) | 2001-05-29 | 2004-10-29 | Sony Electronics Singapore Pte | A force sensing device |
US6504385B2 (en) | 2001-05-31 | 2003-01-07 | Hewlett-Pakcard Company | Three-axis motion sensor |
US6513380B2 (en) | 2001-06-19 | 2003-02-04 | Microsensors, Inc. | MEMS sensor with single central anchor and motion-limiting connection geometry |
US6683692B2 (en) | 2001-06-21 | 2004-01-27 | Honeywell International | Dither system for motion sensors |
US20030033850A1 (en) | 2001-08-09 | 2003-02-20 | Challoner A. Dorian | Cloverleaf microgyroscope with electrostatic alignment and tuning |
US6937479B2 (en) * | 2001-08-21 | 2005-08-30 | The Charles Stark Draper Laboratory, Inc. | Sensor isolation system |
US6598475B2 (en) | 2001-09-20 | 2003-07-29 | Honeywell International Inc. | Micromechanical inertial sensor having increased pickoff resonance damping |
ATE509254T1 (de) | 2002-02-06 | 2011-05-15 | Analog Devices Inc | Mikrohergestellter kreisel |
US6714070B1 (en) | 2002-02-07 | 2004-03-30 | Bei Technologies, Inc. | Differential charge amplifier with built-in testing for rotation rate sensor |
US6785117B2 (en) | 2002-03-15 | 2004-08-31 | Denso Corporation | Capacitive device |
US6725719B2 (en) | 2002-04-17 | 2004-04-27 | Milli Sensor Systems And Actuators, Inc. | MEMS-integrated inertial measurement units on a common substrate |
US6854315B2 (en) | 2002-04-22 | 2005-02-15 | Northrop Grumman Corporation | Quadrature compensation technique for vibrating gyroscopes |
US7217588B2 (en) | 2005-01-05 | 2007-05-15 | Sharp Laboratories Of America, Inc. | Integrated MEMS packaging |
US6701786B2 (en) | 2002-04-29 | 2004-03-09 | L-3 Communications Corporation | Closed loop analog gyro rate sensor |
AU2003223783A1 (en) | 2002-04-29 | 2003-11-17 | Silicon Pipe, Inc. | Direct-connect signaling system |
US6992399B2 (en) * | 2002-05-24 | 2006-01-31 | Northrop Grumman Corporation | Die connected with integrated circuit component for electrical signal passing therebetween |
US6915215B2 (en) | 2002-06-25 | 2005-07-05 | The Boeing Company | Integrated low power digital gyro control electronics |
US6781231B2 (en) | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
US6737742B2 (en) | 2002-09-11 | 2004-05-18 | International Business Machines Corporation | Stacked package for integrated circuits |
US7477529B2 (en) | 2002-11-01 | 2009-01-13 | Honeywell International Inc. | High-voltage power supply |
ATE352517T1 (de) | 2003-02-11 | 2007-02-15 | Koninkl Philips Electronics Nv | Verfahren zur herstellung einer elektronischen vorrichtung und elektronische vorrichtung |
US20040231420A1 (en) | 2003-02-24 | 2004-11-25 | Huikai Xie | Integrated monolithic tri-axial micromachined accelerometer |
JP4336946B2 (ja) | 2003-03-20 | 2009-09-30 | セイコーエプソン株式会社 | 回転角速度の測定方法および装置 |
US7119511B2 (en) | 2003-04-11 | 2006-10-10 | International Business Machines Corporation | Servo system for a two-dimensional micro-electromechanical system (MEMS)-based scanner and method therefor |
DE10317159B4 (de) | 2003-04-14 | 2007-10-11 | Litef Gmbh | Verfahren zur Kompensation eines Nullpunktfehlers in einem Corioliskreisel |
US6848304B2 (en) | 2003-04-28 | 2005-02-01 | Analog Devices, Inc. | Six degree-of-freedom micro-machined multi-sensor |
US7005193B2 (en) | 2003-04-29 | 2006-02-28 | Motorola, Inc. | Method of adding mass to MEMS structures |
JP4123044B2 (ja) | 2003-05-13 | 2008-07-23 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
JP2005024310A (ja) | 2003-06-30 | 2005-01-27 | Kyocera Kinseki Corp | 慣性センサ |
US6845670B1 (en) | 2003-07-08 | 2005-01-25 | Freescale Semiconductor, Inc. | Single proof mass, 3 axis MEMS transducer |
GB0322236D0 (en) | 2003-09-23 | 2003-10-22 | Qinetiq Ltd | Resonant magnetometer device |
JP2005123591A (ja) | 2003-09-25 | 2005-05-12 | Rohm Co Ltd | 半導体装置及びこれを実装した電子機器 |
JP4433747B2 (ja) | 2003-09-29 | 2010-03-17 | 株式会社村田製作所 | 角速度検出装置 |
JP4645013B2 (ja) | 2003-10-03 | 2011-03-09 | パナソニック株式会社 | 加速度センサ及びそれを用いた複合センサ |
WO2005058133A2 (en) | 2003-12-11 | 2005-06-30 | Proteus Biomedical, Inc. | Implantable pressure sensors |
US6936918B2 (en) | 2003-12-15 | 2005-08-30 | Analog Devices, Inc. | MEMS device with conductive path through substrate |
DE10360962B4 (de) | 2003-12-23 | 2007-05-31 | Litef Gmbh | Verfahren zur Quadraturbias-Kompensation in einem Corioliskreisel sowie dafür geeigneter Corioliskreisel |
US7173402B2 (en) | 2004-02-25 | 2007-02-06 | O2 Micro, Inc. | Low dropout voltage regulator |
US20050189635A1 (en) | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
US6912082B1 (en) | 2004-03-11 | 2005-06-28 | Palo Alto Research Center Incorporated | Integrated driver electronics for MEMS device using high voltage thin film transistors |
JP3875240B2 (ja) | 2004-03-31 | 2007-01-31 | 株式会社東芝 | 電子部品の製造方法 |
TWI255341B (en) | 2004-06-10 | 2006-05-21 | Chung Shan Inst Of Science | Miniature accelerator |
JP4412477B2 (ja) | 2004-06-11 | 2010-02-10 | 株式会社デンソー | 振動型角速度センサ |
CN100368772C (zh) | 2004-06-29 | 2008-02-13 | 东南大学 | 电容式微陀螺敏感信号的双路谐波提取方法及提取装置 |
CN100368773C (zh) | 2004-06-29 | 2008-02-13 | 东南大学 | 电容式微陀螺敏感信号的单路谐波提取方法及提取装置 |
US7301212B1 (en) | 2004-07-30 | 2007-11-27 | National Semiconductor Corporation | MEMS microphone |
EP1624285B1 (en) | 2004-08-03 | 2014-07-23 | STMicroelectronics Srl | Resonant micro-electro-mechanical system and gyroscope |
US7266349B2 (en) | 2004-08-06 | 2007-09-04 | Broadcom Corporation | Multi-mode crystal oscillator |
US7929714B2 (en) | 2004-08-11 | 2011-04-19 | Qualcomm Incorporated | Integrated audio codec with silicon audio transducer |
US7421898B2 (en) | 2004-08-16 | 2008-09-09 | The Regents Of The University Of California | Torsional nonresonant z-axis micromachined gyroscope with non-resonant actuation to measure the angular rotation of an object |
US7170187B2 (en) | 2004-08-31 | 2007-01-30 | International Business Machines Corporation | Low stress conductive polymer bump |
CN101044684B (zh) | 2004-09-17 | 2012-11-14 | 美国亚德诺半导体公司 | 使用斩波稳定的多位连续时间前端∑-△adc |
JP4353087B2 (ja) | 2004-12-01 | 2009-10-28 | 株式会社デンソー | 回転振動型角速度センサ |
JP4969822B2 (ja) * | 2004-12-06 | 2012-07-04 | 株式会社デンソー | センサ装置 |
US7358151B2 (en) | 2004-12-21 | 2008-04-15 | Sony Corporation | Microelectromechanical system microphone fabrication including signal processing circuitry on common substrate |
US20060169041A1 (en) | 2005-02-02 | 2006-08-03 | Madni Asad M | Combined gyroscope and 2-axis accelerometer |
DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
US7481109B2 (en) | 2005-03-04 | 2009-01-27 | Custom Sensors & Technologies, Inc. | Inertial measurement system and method with bias cancellation |
US20060207327A1 (en) | 2005-03-16 | 2006-09-21 | Zarabadi Seyed R | Linear accelerometer |
US7213458B2 (en) | 2005-03-22 | 2007-05-08 | Honeywell International Inc. | Quadrature reduction in MEMS gyro devices using quad steering voltages |
US7231824B2 (en) | 2005-03-22 | 2007-06-19 | Honeywell International Inc. | Use of electrodes to cancel lift effects in inertial sensors |
JP4453587B2 (ja) | 2005-03-24 | 2010-04-21 | 株式会社デンソー | 加速度センサ |
EP1715580B1 (en) | 2005-03-31 | 2018-11-28 | STMicroelectronics Srl | Device for controlling the resonance frequency of a MEMS resonator |
US7885423B2 (en) | 2005-04-25 | 2011-02-08 | Analog Devices, Inc. | Support apparatus for microphone diaphragm |
US20070071268A1 (en) | 2005-08-16 | 2007-03-29 | Analog Devices, Inc. | Packaged microphone with electrically coupled lid |
US7449355B2 (en) | 2005-04-27 | 2008-11-11 | Robert Bosch Gmbh | Anti-stiction technique for electromechanical systems and electromechanical device employing same |
EP1882127A2 (en) * | 2005-05-18 | 2008-01-30 | Kolo Technologies, Inc. | Micro-electro-mechanical transducers |
WO2006126253A1 (ja) | 2005-05-24 | 2006-11-30 | Japan Aerospace Exploration Agency | ジャイロスコープ |
US7339384B2 (en) | 2005-06-02 | 2008-03-04 | Georgia Tech Research Corporation | System and method for sensing capacitance change of a capacitive sensor |
CN101213461B (zh) | 2005-06-03 | 2013-01-02 | 辛纳普蒂克斯公司 | 使用sigma-delta测量技术检测电容的方法和*** |
US7240552B2 (en) | 2005-06-06 | 2007-07-10 | Bei Technologies, Inc. | Torsional rate sensor with momentum balance and mode decoupling |
JP5028751B2 (ja) | 2005-06-09 | 2012-09-19 | ソニー株式会社 | 行動認識装置 |
JP2007024864A (ja) | 2005-06-16 | 2007-02-01 | Mitsubishi Electric Corp | 振動ジャイロ |
FI119299B (fi) | 2005-06-17 | 2008-09-30 | Vti Technologies Oy | Menetelmä kapasitiivisen kiihtyvyysanturin valmistamiseksi ja kapasitiivinen kiihtyvyysanturi |
JP5128470B2 (ja) | 2005-06-17 | 2013-01-23 | コロ テクノロジーズ インコーポレイテッド | 絶縁延長を有する微小電気機械変換器 |
US7202552B2 (en) | 2005-07-15 | 2007-04-10 | Silicon Matrix Pte. Ltd. | MEMS package using flexible substrates, and method thereof |
JP4740678B2 (ja) | 2005-07-27 | 2011-08-03 | Okiセミコンダクタ株式会社 | 半導体装置 |
US7565839B2 (en) | 2005-08-08 | 2009-07-28 | Northrop Grumman Guidance And Electronics Company, Inc. | Bias and quadrature reduction in class II coriolis vibratory gyros |
WO2007017819A1 (en) | 2005-08-11 | 2007-02-15 | Koninklijke Philips Electronics N.V. | Method for manufacturing a microelectronic package comprising a silicon mems microphone |
US20070220973A1 (en) | 2005-08-12 | 2007-09-27 | Cenk Acar | Multi-axis micromachined accelerometer and rate sensor |
US7284430B2 (en) | 2005-08-15 | 2007-10-23 | The Regents Of The University Of California | Robust micromachined gyroscopes with two degrees of freedom sense-mode oscillator |
US20070040231A1 (en) | 2005-08-16 | 2007-02-22 | Harney Kieran P | Partially etched leadframe packages having different top and bottom topologies |
US7932182B2 (en) | 2005-08-19 | 2011-04-26 | Honeywell International Inc. | Creating novel structures using deep trenching of oriented silicon substrates |
US8130979B2 (en) | 2005-08-23 | 2012-03-06 | Analog Devices, Inc. | Noise mitigating microphone system and method |
US7622782B2 (en) | 2005-08-24 | 2009-11-24 | General Electric Company | Pressure sensors and methods of making the same |
KR20080051180A (ko) | 2005-09-23 | 2008-06-10 | 캘리포니아 인스티튜트 오브 테크놀로지 | 칩 안테나 상 ㎜-파 완전 집적 위상 어레이 수신기 및송신기 |
US8027143B2 (en) | 2005-10-14 | 2011-09-27 | Epcos Ag | MEMS tunable device |
US7714577B2 (en) | 2005-10-18 | 2010-05-11 | Tursiop Technologies Llc | Method and apparatus for high-gain magnetic resonance imaging |
US7679364B2 (en) | 2005-10-18 | 2010-03-16 | Tursiop Technologies Llc | Method and apparatus for high-gain magnetic resonance imaging |
JP2007114078A (ja) | 2005-10-21 | 2007-05-10 | Sony Corp | Memsセンサの駆動装置およびその駆動方法、並びにmemsを用いたアクティブセンサ |
US7258011B2 (en) | 2005-11-21 | 2007-08-21 | Invensense Inc. | Multiple axis accelerometer |
US20070114643A1 (en) | 2005-11-22 | 2007-05-24 | Honeywell International Inc. | Mems flip-chip packaging |
US7539003B2 (en) | 2005-12-01 | 2009-05-26 | Lv Sensors, Inc. | Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes |
US7518493B2 (en) | 2005-12-01 | 2009-04-14 | Lv Sensors, Inc. | Integrated tire pressure sensor system |
EP1793497B1 (en) | 2005-12-02 | 2011-04-27 | STMicroelectronics Srl | Device and method for reading a capacitive sensor, in particular of a micro-electromechanical type |
US8113050B2 (en) | 2006-01-25 | 2012-02-14 | The Regents Of The University Of California | Robust six degree-of-freedom micromachined gyroscope with anti-phase drive scheme and method of operation of the same |
US7290435B2 (en) | 2006-02-06 | 2007-11-06 | Invensense Inc. | Method and apparatus for electronic cancellation of quadrature error |
GB2435544B (en) | 2006-02-24 | 2008-11-19 | Oligon Ltd | Mems device |
US7436054B2 (en) | 2006-03-03 | 2008-10-14 | Silicon Matrix, Pte. Ltd. | MEMS microphone with a stacked PCB package and method of producing the same |
CN100451547C (zh) | 2006-03-09 | 2009-01-14 | 上海交通大学 | 双定子电磁悬浮转子微转动陀螺 |
US7589390B2 (en) | 2006-03-10 | 2009-09-15 | Teledyne Technologies, Incorporated | Shielded through-via |
EP1832841B1 (en) | 2006-03-10 | 2015-12-30 | STMicroelectronics Srl | Microelectromechanical integrated sensor structure with rotary driving motion |
JP2009530603A (ja) | 2006-03-13 | 2009-08-27 | イシャイ センソールス エル ティー デー. | 二軸振動ジャイロスコープ |
FR2898683B1 (fr) | 2006-03-14 | 2008-05-23 | Commissariat Energie Atomique | Accelerometre triaxial a membrane |
GB0605576D0 (en) | 2006-03-20 | 2006-04-26 | Oligon Ltd | MEMS device |
JP2007292499A (ja) | 2006-04-21 | 2007-11-08 | Sony Corp | モーションセンサ及びその製造方法 |
US7726188B2 (en) | 2006-04-24 | 2010-06-01 | Millisensor Systems + Actuators | Scale factor measurement for mems gyroscopes and accelerometers |
US7561277B2 (en) | 2006-05-19 | 2009-07-14 | New Jersey Institute Of Technology | MEMS fiber optic microphone |
JP4310325B2 (ja) | 2006-05-24 | 2009-08-05 | 日立金属株式会社 | 角速度センサ |
US7444869B2 (en) | 2006-06-29 | 2008-11-04 | Honeywell International Inc. | Force rebalancing and parametric amplification of MEMS inertial sensors |
US7454967B2 (en) | 2006-07-10 | 2008-11-25 | Lv Sensors, Inc. | Signal conditioning methods and circuits for a capacitive sensing integrated tire pressure sensor |
US7538705B2 (en) | 2006-07-25 | 2009-05-26 | Microchip Technology Incorporated | Offset cancellation and reduced source induced 1/f noise of voltage reference by using bit stream from over-sampling analog-to-digital converter |
TWI301823B (en) | 2006-08-29 | 2008-10-11 | Ind Tech Res Inst | Package structure and packaging method of mems microphone |
JP5294228B2 (ja) | 2006-09-27 | 2013-09-18 | シチズンホールディングス株式会社 | 物理量センサ |
EP2074381B1 (en) | 2006-09-28 | 2010-05-12 | Medtronic, Inc. | Capacitive interface circuit for low power sensor system |
KR100831405B1 (ko) | 2006-10-02 | 2008-05-21 | (주) 파이오닉스 | 웨이퍼 본딩 패키징 방법 |
US7675162B2 (en) * | 2006-10-03 | 2010-03-09 | Innovative Micro Technology | Interconnect structure using through wafer vias and method of fabrication |
US20080083958A1 (en) | 2006-10-05 | 2008-04-10 | Wen-Chieh Wei | Micro-electromechanical system package |
DE102006048381A1 (de) | 2006-10-12 | 2008-04-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor zur Erfassung von Beschleunigungen |
US7461552B2 (en) | 2006-10-23 | 2008-12-09 | Custom Sensors & Technologies, Inc. | Dual axis rate sensor |
US7982570B2 (en) | 2006-11-07 | 2011-07-19 | General Electric Company | High performance low volume inductor and method of making same |
CN1948906B (zh) | 2006-11-10 | 2011-03-23 | 北京大学 | 一种电容式全解耦水平轴微机械陀螺 |
US8201449B2 (en) | 2006-11-14 | 2012-06-19 | Panasonic Corporation | Sensor |
US8026771B2 (en) | 2006-11-27 | 2011-09-27 | Seiko Epson Corporation | Driver device, physical quantity measuring device, and electronic instrument |
TWI315295B (en) * | 2006-12-29 | 2009-10-01 | Advanced Semiconductor Eng | Mems microphone module and method thereof |
US7550828B2 (en) | 2007-01-03 | 2009-06-23 | Stats Chippac, Inc. | Leadframe package for MEMS microphone assembly |
US8047075B2 (en) | 2007-06-21 | 2011-11-01 | Invensense, Inc. | Vertically integrated 3-axis MEMS accelerometer with electronics |
US8250921B2 (en) | 2007-07-06 | 2012-08-28 | Invensense, Inc. | Integrated motion processing unit (MPU) with MEMS inertial sensing and embedded digital electronics |
WO2008087578A2 (en) | 2007-01-17 | 2008-07-24 | Nxp B.V. | A system-in-package with through substrate via holes |
JP4924370B2 (ja) | 2007-01-26 | 2012-04-25 | パナソニック株式会社 | Σδ型ad変換器およびそれを用いた角速度センサ |
CN101239697B (zh) * | 2007-02-06 | 2013-02-13 | 万长风 | 垂直集成微电子机械结构、实现方法及其*** |
US7859113B2 (en) | 2007-02-27 | 2010-12-28 | International Business Machines Corporation | Structure including via having refractory metal collar at copper wire and dielectric layer liner-less interface and related method |
US7950281B2 (en) | 2007-02-28 | 2011-05-31 | Infineon Technologies Ag | Sensor and method for sensing linear acceleration and angular velocity |
US7544531B1 (en) | 2007-03-13 | 2009-06-09 | Sitime Inc. | Ground strap for suppressing stiction during MEMS fabrication |
JP2008256438A (ja) | 2007-04-03 | 2008-10-23 | Sony Corp | 慣性センサ及び電気・電子機器 |
US20080251866A1 (en) * | 2007-04-10 | 2008-10-16 | Honeywell International Inc. | Low-stress hermetic die attach |
CN101038299A (zh) | 2007-04-21 | 2007-09-19 | 中北大学 | 基于单质量块的单轴集成惯性测量器件 |
US8006557B2 (en) | 2007-05-16 | 2011-08-30 | Intellisense Software Corporation | Multi-axis sensor |
CN100526800C (zh) | 2007-05-31 | 2009-08-12 | 上海交通大学 | 挠性静电补偿式线圈加矩流体微陀螺仪 |
US8049326B2 (en) * | 2007-06-07 | 2011-11-01 | The Regents Of The University Of Michigan | Environment-resistant module, micropackage and methods of manufacturing same |
CN101067555B (zh) | 2007-06-08 | 2010-11-10 | 北京航空航天大学 | 力平衡式谐振微机械陀螺 |
US7817331B2 (en) | 2007-06-21 | 2010-10-19 | Jds Uniphase Corporation | MEMS device with an angular vertical comb actuator |
US8061201B2 (en) | 2007-07-13 | 2011-11-22 | Georgia Tech Research Corporation | Readout method and electronic bandwidth control for a silicon in-plane tuning fork gyroscope |
DE102007035806B4 (de) | 2007-07-31 | 2011-03-17 | Sensordynamics Ag | Mikromechanischer Drehratensensor |
TWI333933B (en) | 2007-08-17 | 2010-12-01 | Advanced Semiconductor Eng | Microelectromechanical-system package and method for manufacturing the same |
US20090175477A1 (en) | 2007-08-20 | 2009-07-09 | Yamaha Corporation | Vibration transducer |
JP5045616B2 (ja) | 2007-08-30 | 2012-10-10 | 株式会社デンソー | 容量式物理量検出装置 |
US8042394B2 (en) | 2007-09-11 | 2011-10-25 | Stmicroelectronics S.R.L. | High sensitivity microelectromechanical sensor with rotary driving motion |
EP2179455A2 (en) | 2007-09-19 | 2010-04-28 | Georgia Tech Research Corporation | Single-resonator dual-frequency lateral-extension mode piezoelectric oscillators, and operating methods thereof |
US7786738B2 (en) | 2007-09-19 | 2010-08-31 | Robert Bosch Gmbh | Cancelling low frequency errors in MEMS systems |
GB0720412D0 (en) | 2007-10-18 | 2007-11-28 | Melexis Nv | Combined mems accelerometer and gyroscope |
US7677099B2 (en) | 2007-11-05 | 2010-03-16 | Invensense Inc. | Integrated microelectromechanical systems (MEMS) vibrating mass Z-axis rate sensor |
JP5487546B2 (ja) | 2008-02-18 | 2014-05-07 | パナソニック株式会社 | 角速度センサ |
JP4508230B2 (ja) | 2007-11-21 | 2010-07-21 | ソニー株式会社 | 慣性センサ及びその検出装置 |
US7830003B2 (en) * | 2007-12-27 | 2010-11-09 | Honeywell International, Inc. | Mechanical isolation for MEMS devices |
CN101217263B (zh) | 2008-01-17 | 2010-12-15 | 埃派克森微电子有限公司 | 放大器直流失调电压的补偿方法与装置 |
US20090183570A1 (en) | 2008-01-18 | 2009-07-23 | Custom Sensors & Technologies, Inc. | Micromachined cross-differential dual-axis accelerometer |
JP2009186213A (ja) | 2008-02-04 | 2009-08-20 | Denso Corp | ジャイロセンサユニット |
JP5365173B2 (ja) | 2008-02-29 | 2013-12-11 | セイコーエプソン株式会社 | 物理量測定装置および電子機器 |
CN101270988B (zh) | 2008-03-14 | 2011-11-30 | 江苏英特神斯科技有限公司 | 多轴惯性传感器及测量多轴平动和转动加速度的方法 |
US7984648B2 (en) | 2008-04-10 | 2011-07-26 | Honeywell International Inc. | Systems and methods for acceleration and rotational determination from an in-plane and out-of-plane MEMS device |
DE102008002748A1 (de) | 2008-06-27 | 2009-12-31 | Sensordynamics Ag | Mikro-Gyroskop |
TW201004857A (en) | 2008-07-23 | 2010-02-01 | Ind Tech Res Inst | A packaging structure and method for integration of microelectronics and MEMS devices by 3D stacking |
JP2010025898A (ja) | 2008-07-24 | 2010-02-04 | Yamaha Corp | Memsセンサ |
DE102008040855B4 (de) | 2008-07-30 | 2022-05-25 | Robert Bosch Gmbh | Dreiachsiger Beschleunigungssensor |
US8450817B2 (en) * | 2008-08-14 | 2013-05-28 | Knowles Electronics Llc | Microelectromechanical system package with strain relief bridge |
US8193596B2 (en) | 2008-09-03 | 2012-06-05 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) package |
CN101666813B (zh) | 2008-09-05 | 2011-12-21 | 财团法人工业技术研究院 | 电容式多轴加速度计 |
TWI374268B (en) | 2008-09-05 | 2012-10-11 | Ind Tech Res Inst | Multi-axis capacitive accelerometer |
US7851925B2 (en) * | 2008-09-19 | 2010-12-14 | Infineon Technologies Ag | Wafer level packaged MEMS integrated circuit |
JP2010078500A (ja) | 2008-09-26 | 2010-04-08 | Toshiba Corp | 慣性センサ |
US8499629B2 (en) | 2008-10-10 | 2013-08-06 | Honeywell International Inc. | Mounting system for torsional suspension of a MEMS device |
JP5517553B2 (ja) | 2008-10-14 | 2014-06-11 | ワトソン インダストリーズ,インコーポレイティド | 直角位相制御方法及びその方法を備えた振動構造ジャイロスコープ |
US7859352B2 (en) | 2008-10-15 | 2010-12-28 | Honeywell International Inc. | Systems and methods to overcome DC offsets in amplifiers used to start resonant micro-electro mechanical systems |
JP5654471B2 (ja) | 2008-10-15 | 2015-01-14 | オー・アー・セー・マイクロテック・アクチボラゲット | ビア配線を作るための方法 |
US7965067B2 (en) | 2008-10-31 | 2011-06-21 | Texas Instruments Incorporated | Dynamic compensation for a pre-regulated charge pump |
WO2010051560A1 (en) | 2008-11-03 | 2010-05-06 | Georgia Tech Research Corporation | Vibratory gyroscope utilizing a frequency-based measurement and providing a frequency output |
JP2010118556A (ja) | 2008-11-13 | 2010-05-27 | Furukawa Electric Co Ltd:The | 半導体装置および半導体装置の製造方法 |
US8205498B2 (en) * | 2008-11-18 | 2012-06-26 | Industrial Technology Research Institute | Multi-axis capacitive accelerometer |
TW201020548A (en) | 2008-11-18 | 2010-06-01 | Ind Tech Res Inst | Multi-axis capacitive accelerometer |
DE102008044053B4 (de) | 2008-11-25 | 2022-07-14 | Robert Bosch Gmbh | Quadraturkompensation für einen Drehratensensor |
IT1391972B1 (it) | 2008-11-26 | 2012-02-02 | St Microelectronics Rousset | Giroscopio microelettromeccanico con movimento di azionamento rotatorio e migliorate caratteristiche elettriche |
GB2466785B (en) | 2008-12-30 | 2011-06-08 | Wolfson Microelectronics Plc | Apparatus and method for testing a capacitive transducer and/or associated electronic circuitry |
US7817075B2 (en) | 2009-02-03 | 2010-10-19 | Windtop Technology Corp. | Apparatus for converting MEMS inductive capacitance |
JP2010185714A (ja) | 2009-02-10 | 2010-08-26 | Panasonic Corp | 物理量センサシステム、物理量センサ装置 |
JP2010190766A (ja) | 2009-02-19 | 2010-09-02 | Seiko Epson Corp | 発振駆動装置、物理量測定装置及び電子機器 |
TWI391663B (zh) | 2009-02-25 | 2013-04-01 | Nat Univ Tsing Hua | 加速度計 |
US7775119B1 (en) | 2009-03-03 | 2010-08-17 | S3C, Inc. | Media-compatible electrically isolated pressure sensor for high temperature applications |
US8256290B2 (en) | 2009-03-17 | 2012-09-04 | Minyao Mao | Tri-axis angular rate sensor |
CN101858928B (zh) | 2009-04-10 | 2012-09-05 | 利顺精密科技股份有限公司 | 微电机***电容式三轴加速度器 |
US8156805B2 (en) | 2009-04-15 | 2012-04-17 | Freescale Semiconductor, Inc. | MEMS inertial sensor with frequency control and method |
EP2252077B1 (en) * | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
US8151641B2 (en) | 2009-05-21 | 2012-04-10 | Analog Devices, Inc. | Mode-matching apparatus and method for micromachined inertial sensors |
CN101561275B (zh) | 2009-05-27 | 2012-01-04 | 上海交通大学 | 利用电磁和电荷弛豫工作的悬浮转子微陀螺 |
IT1394898B1 (it) | 2009-06-03 | 2012-07-20 | St Microelectronics Rousset | Giroscopio microelettromeccanico con attuazione a controllo di posizione e metodo per il controllo di un giroscopio microelettromeccanico |
IT1394627B1 (it) | 2009-06-05 | 2012-07-05 | St Microelectronics Rousset | Filtro passabanda a condensatori commutati di tipo tempo-discreto, in particolare per la cancellazione dell'offset e di rumore a bassa frequenza di stadi a condensatori commutati |
US8661871B2 (en) | 2009-07-31 | 2014-03-04 | Stmicroelectronics S.R.L. | Method for testing a microelectromechanical device, microelectromechanical device |
US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
CN102597699B (zh) | 2009-08-04 | 2015-07-08 | 飞兆半导体公司 | 微机械惯性传感器器件 |
US8266961B2 (en) | 2009-08-04 | 2012-09-18 | Analog Devices, Inc. | Inertial sensors with reduced sensitivity to quadrature errors and micromachining inaccuracies |
CN101634662B (zh) | 2009-08-07 | 2011-01-26 | 北京大学 | 微加速度计及其制备方法 |
US8456173B2 (en) | 2009-09-30 | 2013-06-04 | Tektronix, Inc. | Signal acquisition system having probe cable termination in a signal processing instrument |
WO2011045909A1 (ja) | 2009-10-13 | 2011-04-21 | パナソニック株式会社 | 角速度センサ |
US8549915B2 (en) | 2009-10-23 | 2013-10-08 | The Regents Of The University Of California | Micromachined gyroscopes with 2-DOF sense modes allowing interchangeable robust and precision operation |
US8421168B2 (en) | 2009-11-17 | 2013-04-16 | Fairchild Semiconductor Corporation | Microelectromechanical systems microphone packaging systems |
JP2011112455A (ja) | 2009-11-25 | 2011-06-09 | Seiko Epson Corp | Memsセンサー及びその製造方法並びに電子機器 |
JP5115618B2 (ja) | 2009-12-17 | 2013-01-09 | 株式会社デンソー | 半導体装置 |
EP2336717B1 (en) | 2009-12-21 | 2012-09-19 | STMicroelectronics Srl | Microelectromechanical device having an oscillating mass, and method for controlling a microelectromechanical device having an oscillating mass |
US8578775B2 (en) | 2010-02-08 | 2013-11-12 | Freescale Semiconductor, Inc. | Generation, injection and use of pilot tones for gyro system characterization |
US8004354B1 (en) | 2010-02-12 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Automatic level control |
GB201003539D0 (en) | 2010-03-03 | 2010-04-21 | Silicon Sensing Systems Ltd | Sensor |
EP2547984B1 (de) | 2010-03-17 | 2014-05-07 | Continental Teves AG & Co. oHG | Verfahren zur entkoppelten regelung der quadratur und der resonanzfrequenz eines mikromechanischen gyroskops |
US20110234312A1 (en) | 2010-03-24 | 2011-09-29 | Texas Instruments Incorporated | Amplifier with improved stability |
CN101813480B (zh) | 2010-04-20 | 2012-02-15 | 浙江大学 | 一种具有电调谐功能的微机械梳状栅电容陀螺 |
US8584522B2 (en) | 2010-04-30 | 2013-11-19 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric x-axis gyroscope |
GB201008195D0 (en) | 2010-05-17 | 2010-06-30 | Silicon Sensing Systems Ltd | Sensor |
US8378756B2 (en) | 2010-05-18 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Drive loop for MEMS oscillator |
CN201688848U (zh) | 2010-05-28 | 2010-12-29 | 南京理工大学 | 双质量振动式硅微机械陀螺仪接口电路 |
JP2011259293A (ja) | 2010-06-10 | 2011-12-22 | Alps Electric Co Ltd | デジタルフィルタ |
CN101916754B (zh) | 2010-06-29 | 2012-08-29 | 香港应用科技研究院有限公司 | 通孔和通孔形成方法以及通孔填充方法 |
US8476970B2 (en) | 2010-09-14 | 2013-07-02 | Ahmed Mokhtar | Interface for MEMS inertial sensors |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
US20130247668A1 (en) | 2010-09-20 | 2013-09-26 | Fairchild Semiconductor Corporation | Inertial sensor mode tuning circuit |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US9003882B1 (en) | 2010-11-03 | 2015-04-14 | Georgia Tech Research Corporation | Vibratory tuning fork based six-degrees of freedom inertial measurement MEMS device |
US9171964B2 (en) | 2010-11-23 | 2015-10-27 | Honeywell International Inc. | Systems and methods for a three-layer chip-scale MEMS device |
CN102156201B (zh) | 2010-11-30 | 2013-01-30 | 电子科技大学 | 一种基于soi工艺及微组装技术的三轴电容式微加速度计 |
CN103348252B (zh) | 2010-12-07 | 2016-01-20 | 佐治亚科技研究公司 | 模式匹配型单一质量块双轴陀螺仪及制造方法 |
CN102109345B (zh) | 2010-12-13 | 2012-12-12 | 谢元平 | 微机械陀螺数字信号处理方法与装置 |
EP2466257A1 (en) | 2010-12-15 | 2012-06-20 | SensoNor Technologies AS | Method for matching the natural frequencies of the drive and sense oscillators in a vibrating coriolis gyroscope |
US8569861B2 (en) | 2010-12-22 | 2013-10-29 | Analog Devices, Inc. | Vertically integrated systems |
EP2527788A1 (en) | 2011-05-26 | 2012-11-28 | Maxim Integrated Products, Inc. | Quadrature error compensation |
US9540230B2 (en) | 2011-06-27 | 2017-01-10 | Invensense, Inc. | Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures |
US8824706B2 (en) * | 2011-08-30 | 2014-09-02 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
CN102337541A (zh) | 2011-09-23 | 2012-02-01 | 中国科学院上海微***与信息技术研究所 | 一种制作锥形穿硅通孔时采用的刻蚀方法 |
KR20130037462A (ko) | 2011-10-06 | 2013-04-16 | 주식회사 포스코 | 몰드 보호 유닛 및 이를 구비하는 연속 주조 장치 |
US8991247B2 (en) | 2011-10-21 | 2015-03-31 | The Regents Of The University Of California | High range digital angular rate sensor based on frequency modulation |
CN102364671B (zh) | 2011-11-03 | 2013-07-24 | 中国科学院微电子研究所 | 制造硅通孔的方法 |
US10390733B2 (en) | 2011-11-07 | 2019-08-27 | Lifelens Technologies, Llc | Metabolic and cardiopulmonary monitor |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
WO2013116514A1 (en) | 2012-02-01 | 2013-08-08 | Cenk Acar | Mems multi-axis gyroscope with central suspension and gimbal structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
KR102048393B1 (ko) | 2012-04-03 | 2019-11-25 | 페어차일드 세미컨덕터 코포레이션 | 정밀한 직각 위상 변이기 |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
KR102034604B1 (ko) | 2012-04-04 | 2019-10-21 | 페어차일드 세미컨덕터 코포레이션 | Asic 집적 캐패시터를 구비한 미소 기전 시스템 가속도계의 자가 테스트 |
KR102045784B1 (ko) | 2012-04-04 | 2019-11-18 | 페어차일드 세미컨덕터 코포레이션 | 병합된 미세 전자기계 가속도계 센서에 대한 초핑을 이용하는 노이즈 감소 방법 |
US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
KR20130113386A (ko) | 2012-04-05 | 2013-10-15 | 페어차일드 세미컨덕터 코포레이션 | Asic 집적 캐패시터를 구비한 미소 기전 시스템 자이로스코프의 자가 테스트 |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
CN104919275B (zh) | 2012-12-12 | 2018-01-26 | 加利福尼亚大学董事会 | 频率读出陀螺仪 |
ITTO20130013A1 (it) | 2013-01-09 | 2014-07-10 | St Microelectronics Srl | Giroscopio microelettromeccanico con compensazione di componenti di segnale di quadratura e metodo di controllo di un giroscopio microelettromeccanico |
KR101462772B1 (ko) | 2013-04-12 | 2014-11-20 | 삼성전기주식회사 | 직각 위상 에러 제거수단을 갖는 자가발진 회로 및 그를 이용한 직각 위상 에러 제거방법 |
US9360319B2 (en) | 2013-09-05 | 2016-06-07 | Freescale Semiconductor, Inc. | Multiple sense axis MEMS gyroscope having a single drive mode |
US9404747B2 (en) | 2013-10-30 | 2016-08-02 | Stmicroelectroncs S.R.L. | Microelectromechanical gyroscope with compensation of quadrature error drift |
-
2011
- 2011-09-18 CN CN201180055792.7A patent/CN103221331B/zh active Active
- 2011-09-18 US US13/821,589 patent/US9856132B2/en active Active
- 2011-09-18 KR KR1020137009775A patent/KR20130052652A/ko not_active Application Discontinuation
- 2011-09-18 WO PCT/US2011/052060 patent/WO2012037537A2/en active Application Filing
- 2011-09-18 US US13/821,586 patent/US9156673B2/en active Active
- 2011-09-18 EP EP11826068.6A patent/EP2616388A4/en not_active Withdrawn
- 2011-09-18 WO PCT/US2011/052059 patent/WO2012037536A2/en active Application Filing
- 2011-09-18 KR KR1020137009788A patent/KR20130057485A/ko not_active Application Discontinuation
- 2011-09-18 EP EP11826067.8A patent/EP2616387B1/en active Active
- 2011-09-18 CN CN201180055794.6A patent/CN103221332B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101171665A (zh) * | 2005-03-18 | 2008-04-30 | 因文森斯公司 | 晶片封装环境中制作ai/ge键合的方法及由其生产的产品 |
CN101316462A (zh) * | 2007-06-01 | 2008-12-03 | 财团法人工业技术研究院 | 微机电***麦克风封装体及其封装组件 |
CN101459866A (zh) * | 2007-12-14 | 2009-06-17 | 财团法人工业技术研究院 | 微机电麦克风模块与制作方法 |
CN101519183A (zh) * | 2008-01-31 | 2009-09-02 | 台湾积体电路制造股份有限公司 | 具有集成电路管芯的微机电***封装 |
CN101638211A (zh) * | 2008-08-01 | 2010-02-03 | 财团法人工业技术研究院 | 整合型立体堆叠封装结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012037536A2 (en) | 2012-03-22 |
WO2012037537A2 (en) | 2012-03-22 |
EP2616388A2 (en) | 2013-07-24 |
CN103221332A (zh) | 2013-07-24 |
WO2012037536A3 (en) | 2012-06-14 |
EP2616387B1 (en) | 2018-05-16 |
WO2012037537A3 (en) | 2012-07-12 |
KR20130057485A (ko) | 2013-05-31 |
KR20130052652A (ko) | 2013-05-22 |
CN103221331A (zh) | 2013-07-24 |
US20130270660A1 (en) | 2013-10-17 |
US9856132B2 (en) | 2018-01-02 |
EP2616387A2 (en) | 2013-07-24 |
CN103221332B (zh) | 2015-11-25 |
EP2616387A4 (en) | 2014-11-05 |
US9156673B2 (en) | 2015-10-13 |
EP2616388A4 (en) | 2014-08-13 |
US20130341737A1 (en) | 2013-12-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103221331B (zh) | 用于微机电***的密封封装 | |
CN100408470C (zh) | 带有热应力释放装置的微型芯片 | |
US10131538B2 (en) | Mechanically isolated MEMS device | |
TW548233B (en) | Flex circuit interconnect subassembly and electronic device packaging utiulizing same | |
JP4835058B2 (ja) | センサパッケージ | |
WO2011062242A1 (ja) | センサデバイス及びその製造方法 | |
CN106794980A (zh) | 用于mems传感器的封装 | |
JP2006518673A (ja) | パッケージ化マイクロチップ | |
WO2010134181A1 (ja) | チップの実装構造、及びそれを備えたモジュール | |
JP2009516598A (ja) | 微小電気機械部品を作製する方法および微小電気機械部品 | |
CN102084480B (zh) | 封装器件装置及封装件用基底构件 | |
JP2010164412A (ja) | 加速度センサ装置および加速度センサ装置の製造方法 | |
WO2007020701A1 (ja) | 加速度センサ装置 | |
CN108878376A (zh) | 一种同时具备低应力和抗高过载的电子器件及其封装方法 | |
US8686547B1 (en) | Stack die structure for stress reduction and facilitation of electromagnetic shielding | |
JP5742170B2 (ja) | Memsデバイス、その製造方法、及びそれを有する半導体装置 | |
JP2007007774A (ja) | 微小電気機械装置用パッケージおよびその製造方法 | |
JP5943107B2 (ja) | センサデバイス及びその製造方法 | |
JP2011119723A (ja) | センサパッケージ | |
Schubring et al. | Ceramic package solutions for MEMS sensors | |
WO2007020700A1 (ja) | 加速度センサ装置およびセンサ装置 | |
JP2014128842A (ja) | Mems素子を有する半導体パッケージ | |
Kuisma et al. | Introduction to Encapsulation and Integration of MEMS | |
Elwenspoek et al. | Packaging | |
JP2008249390A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Arizona, USA Patentee after: Fairchild Semiconductor Corp. Address before: American California Patentee before: Fairchild Semiconductor Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190723 Address after: Floor 1, Building 2, 235 Chengbei Road, Jiading District, Shanghai Patentee after: Shanghai Xirui Technology Co., Ltd. Address before: Arizona, USA Patentee before: Fairchild Semiconductor Corp. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Patentee before: Shanghai Silicon Technology Co.,Ltd. |