IT1314296B1 - Struttura resistiva integrata su un substrato semiconduttore - Google Patents
Struttura resistiva integrata su un substrato semiconduttoreInfo
- Publication number
- IT1314296B1 IT1314296B1 IT1999MI002667A ITMI992667A IT1314296B1 IT 1314296 B1 IT1314296 B1 IT 1314296B1 IT 1999MI002667 A IT1999MI002667 A IT 1999MI002667A IT MI992667 A ITMI992667 A IT MI992667A IT 1314296 B1 IT1314296 B1 IT 1314296B1
- Authority
- IT
- Italy
- Prior art keywords
- structure integrated
- semiconductive substrate
- resistive structure
- resistive
- semiconductive
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999MI002667A IT1314296B1 (it) | 1999-12-21 | 1999-12-21 | Struttura resistiva integrata su un substrato semiconduttore |
| US09/747,425 US20010022384A1 (en) | 1999-12-21 | 2000-12-21 | Resistive structure integrated in a semiconductor substrate |
| US10/729,721 US20040119137A1 (en) | 1999-12-21 | 2003-12-05 | Resistive structure integrated in a semiconductor substrate |
| US11/333,114 US20060125049A1 (en) | 1999-12-21 | 2006-01-17 | Resistive structure integrated in a semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1999MI002667A IT1314296B1 (it) | 1999-12-21 | 1999-12-21 | Struttura resistiva integrata su un substrato semiconduttore |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI992667A0 ITMI992667A0 (it) | 1999-12-21 |
| ITMI992667A1 ITMI992667A1 (it) | 2001-06-21 |
| IT1314296B1 true IT1314296B1 (it) | 2002-12-09 |
Family
ID=11384162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT1999MI002667A IT1314296B1 (it) | 1999-12-21 | 1999-12-21 | Struttura resistiva integrata su un substrato semiconduttore |
Country Status (2)
| Country | Link |
|---|---|
| US (3) | US20010022384A1 (it) |
| IT (1) | IT1314296B1 (it) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1302984A1 (en) * | 2001-10-09 | 2003-04-16 | STMicroelectronics S.r.l. | Protection structure against electrostatic discharges (ESD) for an electronic device integrated on a SOI substrate and corresponding integration process |
| US7084483B2 (en) * | 2004-05-25 | 2006-08-01 | International Business Machines Corporation | Trench type buried on-chip precision programmable resistor |
| CA2518657A1 (en) * | 2004-09-13 | 2006-03-13 | Inventio Ag | Gravity-fed lubricator for escalators or moving walks |
| CA2533225C (en) | 2006-01-19 | 2016-03-22 | Technologies Ltrim Inc. | A tunable semiconductor component provided with a current barrier |
| US8739626B2 (en) * | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
| CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
| EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
| US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
| KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
| US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
| EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
| US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
| US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
| EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
| EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753391A (en) * | 1995-09-27 | 1998-05-19 | Micrel, Incorporated | Method of forming a resistor having a serpentine pattern through multiple use of an alignment keyed mask |
| JPH09289285A (ja) * | 1996-04-19 | 1997-11-04 | Nec Corp | 半導体装置およびその製造方法 |
| US6054359A (en) * | 1999-06-14 | 2000-04-25 | Taiwan Semiconductor Manufacturing Company | Method for making high-sheet-resistance polysilicon resistors for integrated circuits |
-
1999
- 1999-12-21 IT IT1999MI002667A patent/IT1314296B1/it active
-
2000
- 2000-12-21 US US09/747,425 patent/US20010022384A1/en not_active Abandoned
-
2003
- 2003-12-05 US US10/729,721 patent/US20040119137A1/en not_active Abandoned
-
2006
- 2006-01-17 US US11/333,114 patent/US20060125049A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20040119137A1 (en) | 2004-06-24 |
| US20060125049A1 (en) | 2006-06-15 |
| ITMI992667A0 (it) | 1999-12-21 |
| US20010022384A1 (en) | 2001-09-20 |
| ITMI992667A1 (it) | 2001-06-21 |
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