CN103199119A - 一种具有超结结构的沟槽肖特基半导体装置及其制备方法 - Google Patents
一种具有超结结构的沟槽肖特基半导体装置及其制备方法 Download PDFInfo
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- CN103199119A CN103199119A CN2012100063849A CN201210006384A CN103199119A CN 103199119 A CN103199119 A CN 103199119A CN 2012100063849 A CN2012100063849 A CN 2012100063849A CN 201210006384 A CN201210006384 A CN 201210006384A CN 103199119 A CN103199119 A CN 103199119A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 230000003628 erosive effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003989 dielectric material Substances 0.000 claims description 18
- 238000001459 lithography Methods 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005036 potential barrier Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000003016 pheromone Substances 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 description 49
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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CN201210006384.9A CN103199119B (zh) | 2012-01-06 | 2012-01-06 | 一种具有超结结构的沟槽肖特基半导体装置及其制备方法 |
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CN201210006384.9A CN103199119B (zh) | 2012-01-06 | 2012-01-06 | 一种具有超结结构的沟槽肖特基半导体装置及其制备方法 |
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CN103199119A true CN103199119A (zh) | 2013-07-10 |
CN103199119B CN103199119B (zh) | 2017-05-17 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024915A (zh) * | 2016-07-25 | 2016-10-12 | 电子科技大学 | 一种超级结肖特基二极管 |
CN106158659A (zh) * | 2015-04-23 | 2016-11-23 | 北大方正集团有限公司 | 超结型功率管的缓冲层的制备方法和超结型功率管 |
CN106298976A (zh) * | 2016-08-08 | 2017-01-04 | 电子科技大学 | 一种沟槽型肖特基二极管 |
CN106328718A (zh) * | 2016-11-04 | 2017-01-11 | 四川洪芯微科技有限公司 | 一种台面二极管 |
CN107256886A (zh) * | 2017-07-12 | 2017-10-17 | 付妮娜 | 沟槽式肖特基二极管及其制作方法 |
Citations (5)
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---|---|---|---|---|
US6590240B1 (en) * | 1999-07-28 | 2003-07-08 | Stmicroelectronics S.A. | Method of manufacturing unipolar components |
CN101189710A (zh) * | 2005-04-22 | 2008-05-28 | 艾斯莫斯技术公司 | 具有氧化物衬里沟槽的超结器件和制造具有氧化物衬里沟槽的超结器件的方法 |
US20090032897A1 (en) * | 2004-12-10 | 2009-02-05 | Robert Bosch Gmbh | Semiconductor Device and Method for Its Manufacture |
CN101803032A (zh) * | 2007-09-21 | 2010-08-11 | 罗伯特·博世有限公司 | 半导体装置及其制造方法 |
CN102222701A (zh) * | 2011-06-23 | 2011-10-19 | 哈尔滨工程大学 | 一种沟槽结构肖特基器件 |
-
2012
- 2012-01-06 CN CN201210006384.9A patent/CN103199119B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6590240B1 (en) * | 1999-07-28 | 2003-07-08 | Stmicroelectronics S.A. | Method of manufacturing unipolar components |
US20090032897A1 (en) * | 2004-12-10 | 2009-02-05 | Robert Bosch Gmbh | Semiconductor Device and Method for Its Manufacture |
CN101189710A (zh) * | 2005-04-22 | 2008-05-28 | 艾斯莫斯技术公司 | 具有氧化物衬里沟槽的超结器件和制造具有氧化物衬里沟槽的超结器件的方法 |
CN101803032A (zh) * | 2007-09-21 | 2010-08-11 | 罗伯特·博世有限公司 | 半导体装置及其制造方法 |
CN102222701A (zh) * | 2011-06-23 | 2011-10-19 | 哈尔滨工程大学 | 一种沟槽结构肖特基器件 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158659A (zh) * | 2015-04-23 | 2016-11-23 | 北大方正集团有限公司 | 超结型功率管的缓冲层的制备方法和超结型功率管 |
CN106024915A (zh) * | 2016-07-25 | 2016-10-12 | 电子科技大学 | 一种超级结肖特基二极管 |
CN106024915B (zh) * | 2016-07-25 | 2019-01-01 | 电子科技大学 | 一种超级结肖特基二极管 |
CN106298976A (zh) * | 2016-08-08 | 2017-01-04 | 电子科技大学 | 一种沟槽型肖特基二极管 |
CN106298976B (zh) * | 2016-08-08 | 2019-03-01 | 电子科技大学 | 一种沟槽型肖特基二极管 |
CN106328718A (zh) * | 2016-11-04 | 2017-01-11 | 四川洪芯微科技有限公司 | 一种台面二极管 |
CN107256886A (zh) * | 2017-07-12 | 2017-10-17 | 付妮娜 | 沟槽式肖特基二极管及其制作方法 |
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CN103199119B (zh) | 2017-05-17 |
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