CN106024915A - 一种超级结肖特基二极管 - Google Patents

一种超级结肖特基二极管 Download PDF

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CN106024915A
CN106024915A CN201610596069.4A CN201610596069A CN106024915A CN 106024915 A CN106024915 A CN 106024915A CN 201610596069 A CN201610596069 A CN 201610596069A CN 106024915 A CN106024915 A CN 106024915A
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junction
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schottky diode
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任敏
林育赐
包惠萍
罗蕾
李泽宏
张波
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University of Electronic Science and Technology of China
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Abstract

本发明属于半导体器件技术领域，涉及一种超级结肖特基二极管。本发明的特征在于：通过在器件体内沟槽处形成肖特基结，增大了肖特基结的有效面积，从而提高器件的电流能力。同时在反向偏压时，利用超级结结构提高器件的反向击穿电压，减小器件的反向漏电。采用本发明可以具有较大的正向电流、较低的导通电阻以及较好的反向击穿特性。

Description

一种超级结肖特基二极管
技术领域
本发明属于半导体器件技术领域，涉及一种超级结肖特基二极管。
背景技术
二极管是最常用的电子元件之一，传统的整流二极管主要是肖特基整流器和PN结整流器。其中，PN结二极管能够承受较高的反向阻断电压，稳定性较好，但是其开启电压较大，反向恢复时间较长。肖特基二极管是利用金属与半导体接触形成的金属-半导体结原理制作的，开启电压较低。由于是单极载流子导电，肖特基二极管在正向导通时没有过剩的少数载流子积累，反向恢复较快。但是肖特基二极管反向漏电流较大，温度特性较差。此外，由于肖特基二极管是单极载流子导电器件，其击穿电压和正向导通压降之间也存在着“硅极限”问题。要提高肖特基二极管的击穿电压，需要增大漂移区厚度、降低漂移区掺杂浓度，这样必然带来正向导通压降的升高以及正向导通损耗的增加。因此，肖特基二极管只能应用于中低压领域。
为了在提高肖特基二极管的反向击穿电压的同时不增加其正向导通压降，研究者们提出将超级结结构引入肖特基二极管的漂移区。例如，专利“一种具有超级结肖特基半导体装置及其制备方法，申请号：201210141949.4”提出了一种具有超结结构的肖特基二极管，该结构利用超结的电荷平衡原理，提高了肖特基二极管的反向击穿电压。但是，现有的超级结肖特基二极管，由于其肖特基结都位于器件表面，而器件表面积有限，因此肖特基二极管的电流能力受到限制。
发明内容
本发明所要解决的，就是提出一种新型的超级结肖特基二极管，通过在器件体内沟槽处形成肖特基结，增大了肖特基结的有效面积，从而提高器件的电流能力，在维持器件高耐压的同时降低了正向导通压降。
本发明的技术方案是：一种超级结肖特基二极管，包括从下至上依次层叠设置的金属化阴极1、N+衬底2、N型漂移区3和金属化阳极9；所述N型漂移区3中具有P型埋层4、P型柱区5、P+重掺杂区6、N型轻掺杂区8以及沟槽7；所述P型埋层4位于沟槽7的正下方，且P型埋层4的上表面与沟槽7的下表面接触；所述P型柱区5位于相邻两个沟槽7之间；所述P+重掺杂区6位于P型柱区5的正上方，且P+重掺杂区6的下表面与P型柱区5的上 表面接触；所述N型轻掺杂区8位于沟槽7的侧面及N型漂移区3的上表面；所述沟槽7中填充有金属，且所述金属与N型轻掺杂区8形成肖特基结；所述N型轻掺杂区8的上表面覆盖和沟槽7中相同的金属，且所述金属与N型轻掺杂区8形成肖特基结；所述金属的上表面与金属化阳极9的下表面接触，所述P+重掺杂区6的上表面与金属化阳极9的下表面接触；所述P型埋层4下表面的结深与P型柱区5下表面的结深相同。
进一步的，所述的P型埋层4和P型柱区5的下表面与衬底N+衬底2的上表面接触。
进一步的，所述的P型埋层4可用厚氧化层10替代。
本发明的有益效果为，相比于现有超级结肖特基二极管，本发明的结构具有较大的正向电流、较低的导通电阻以及较好的反向击穿特性。
附图说明
图1是本发明提供的实施例1的剖面结构示意图；
图2是本发明提供的实施例2的剖面结构示意图；
图3是本发明提供的实施例3的剖面结构示意图；
图4-图12是本发明提供的超级结肖特基二极管的一种制造工艺流程的示意图。
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1
如图1所示，本例的一种超级结肖特基二极管，包括从下至上依次层叠设置的金属化阴极1、N+衬底2、N型漂移区3和金属化阳极9；所述N型漂移区3中具有P型埋层4、P型柱区5、P+重掺杂区6、N型轻掺杂区8以及沟槽7；所述P型埋层4位于沟槽7的正下方，且P型埋层4的上表面与沟槽7的下表面接触；所述P型柱区5位于相邻两个沟槽7之间；所述P+重掺杂区6位于P型柱区5的正上方，且P+重掺杂区6的下表面与P型柱区5的上表面接触；所述N型轻掺杂区8位于沟槽7的侧面及N型漂移区3的上表面；所述沟槽7中填充有金属，且所述金属与N型轻掺杂区8形成肖特基结；所述N型轻掺杂区8的上表面覆盖和沟槽7中相同的金属，且所述金属与N型轻掺杂区8形成肖特基结；所述金属的上表面与金属化阳极9的下表面接触，所述P+重掺杂区6的上表面与金属化阳极9的下表面接触；所述P型埋层4下表面的结深与P型柱区5下表面的结深相同。
本实施例的工作原理：
本例的一种超级结肖特基二极管，其正向导通时的电极连接方式为：金属化阳极9接高电位，金属化阴极1低接低电位。金属沟槽7和N型轻掺杂区8接触形成肖特基势垒结，并且由于金属沟槽7深入体内，其侧面积大，所以可以增大肖特基势垒结的有效面积，从而可以提高器件的电流能力。另外，由于超结结构的存在，可以提高N型漂移区3的杂质掺杂浓度，降低器件的正向导通压降，改善器件的正向导通特性。由于N型轻掺杂区8和N型漂移区3的杂质浓度可以独立设计，因此既能将N型轻掺杂区8的掺杂浓度设计的较低以降低开启电压，又能将N型漂移区3的掺杂浓度设计的较高，以获得低导通压降，实现器件性能的最优。
本例的一种超级结肖特基二极管，其反向阻断时的电极连接方式为：金属化阳极9接低电位，金属化阴极1低接高电位。此时P型柱区5可以与掺杂浓度较高的N型漂移区3实现电荷补偿，产生横向电场，使得N型漂移区3耗尽，因而N型漂移区3在纵向方向上的电学特性相当于本征半导体，可以承受更高的反向击穿耐压，降低器件的反向漏电流。P型埋层4同样可以与N型漂移区3形成横向电场，进一步提高器件的反向击穿耐压，降低肖特基结的反向漏电流；同时由于P型埋层4位于金属沟槽7的底部，进一步可以降低器件的反向漏电流。
实施例2
如图2所示，本例的结构在实施例1的基础上，加深P型柱区5和金属沟槽7的槽深，使得P型埋层4的下表面结深和P型柱区5的下表面结深向下延伸至与衬底N+区2相连。本例有益效果为，可以进一步提高反向耐压，降低反向漏电流。
实施例3
如图3所示，本例的结构在实施例1的基础上，用厚氧化层10替代沟槽7之下的P型埋层4。本例有益效果为，可以防止器件在沟槽7底部击穿，进一步提高反向耐压。
以实施例1为例，本发明结构可以用以下方法制备得到，工艺步骤为：
(1)单晶硅准备及外延生长：如图4，采用N型重掺杂单晶硅衬底2，采用气相外延VPE等方法生长一定厚度和掺杂浓度的N型漂移区3；
(2)刻槽：如图5，淀积硬掩膜11(如氮化硅)作为后续挖槽的阻挡层，光刻后刻蚀硬掩膜，再利用硬掩膜进行深槽刻蚀，具体刻蚀工艺可以使用反应离子刻蚀或等离子刻蚀；
(4)外延生长P柱5：如图6，在沟槽内外延P型半导体，再进行表面的化学机械抛光(CMP)，去除多余的P型半导体，形成P型柱区5；
(5)再次刻槽：如图7，淀积新的硬掩膜12(如氮化硅)作为后续挖槽的阻挡层，光刻后刻蚀硬掩膜12，再利用硬掩膜12进行深槽刻蚀，具体刻蚀工艺可以使用反应离子刻蚀或等离子刻蚀；
(6)离子注入：如图8，进行P型离子注入，利用硬掩膜12作为阻挡层，在沟槽底部形成P型埋层4；
(7)再次离子注入：如图9，离子注入前，去除为了刻槽而淀积的硬掩膜层12。注入时采用机台旋转的斜角离子注入，注入适量的P型杂质离子，与N型漂移区3经杂质补偿之后，在沟槽侧壁及N型漂移区3表面形成N型轻掺杂区8；
(8)金属填充：如图10，用适当的肖特基金属(如金属铂)填充深槽，在沟槽侧壁及N型漂移区3表面与N型轻掺杂区8形成肖特基接触；
(9)刻蚀接触孔：刻蚀P型柱5上方的肖特基金属，形成接触孔，并在接触孔内进行P型离子注入，形成高掺杂P型区6，以便形成欧姆接触，如图11；
(10)淀积金属化电极：在器件上表面和下表面淀积金属，形成阳极9和阴极1，如图12。其中阳极9与肖特基金属7及重掺杂P型区6相连，阴极1与重掺杂衬底1相连。
制作器件时，还可用碳化硅、砷化镓或锗硅等半导体材料替代硅。

Claims (3)

1.一种超级结肖特基二极管，包括从下至上依次层叠设置的金属化阴极(1)、N+衬底(2)、N型漂移区(3)和金属化阳极(9)；所述N型漂移区(3)中具有P型埋层(4)、P型柱区(5)、P+重掺杂区(6)、N型轻掺杂区(8)以及沟槽(7)；所述P型埋层(4)位于沟槽(7)的正下方，且P型埋层(4)的上表面与沟槽(7)的下表面接触；所述P型柱区(5)位于相邻两个沟槽(7)之间；所述P+重掺杂区(6)位于P型柱区(5)的正上方，且P+重掺杂区(6)的下表面与P型柱区(5)的上表面接触；所述N型轻掺杂区(8)位于沟槽(7)的侧面及N型漂移区(3)的上表面；所述沟槽(7)中填充有金属，且所述金属与N型轻掺杂区(8)形成肖特基结；所述N型轻掺杂区(8)的上表面覆盖和沟槽(7)中相同的金属，且所述金属与N型轻掺杂区(8)形成肖特基结；所述金属的上表面与金属化阳极(9)的下表面接触，所述所述P+重掺杂区(6)的上表面与金属化阳极(9)的下表面接触；所述P型埋层(4)下表面的结深与P型柱区(5)下表面的结深相同。
2.根据权利要求1所述的一种超级结肖特基二极管，其特征在于，所述的P型埋层(4)和P型柱区(5)的下表面与衬底N+衬底(2)的上表面接触。
3.根据权利要求1或2所述的一种超级结肖特基二极管，其特征在于，所述沟槽(7)下方的P型埋层(4)可用厚氧化层(10)替代。
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