WO2013039344A3 - 발광 다이오드 및 그것을 제조하는 방법 - Google Patents

발광 다이오드 및 그것을 제조하는 방법 Download PDF

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WO2013039344A3
WO2013039344A3 PCT/KR2012/007358 KR2012007358W WO2013039344A3 WO 2013039344 A3 WO2013039344 A3 WO 2013039344A3 KR 2012007358 W KR2012007358 W KR 2012007358W WO 2013039344 A3 WO2013039344 A3 WO 2013039344A3
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WIPO (PCT)
Prior art keywords
semiconductor layer
conductive semiconductor
light emitting
emitting diode
mesas
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PCT/KR2012/007358
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English (en)
French (fr)
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WO2013039344A2 (ko
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채종현
장종민
노원영
서대웅
갈대성
이준섭
이규호
인치현
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서울옵토디바이스(주)
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=47883888&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2013039344(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020120015758A external-priority patent/KR20130094483A/ko
Priority claimed from KR1020120052722A external-priority patent/KR20130128747A/ko
Priority to JP2014530591A priority Critical patent/JP5869678B2/ja
Priority to EP18158047.3A priority patent/EP3361517B1/en
Priority to EP21185027.6A priority patent/EP3926698B1/en
Priority to EP12832213.8A priority patent/EP2757598B1/en
Priority to EP22184977.1A priority patent/EP4109570A1/en
Priority to US14/345,382 priority patent/US20140361327A1/en
Priority to EP18166240.4A priority patent/EP3364467B1/en
Application filed by 서울옵토디바이스(주) filed Critical 서울옵토디바이스(주)
Priority to CN201280045164.5A priority patent/CN103828073B/zh
Priority to EP17165501.2A priority patent/EP3223320B1/en
Priority to EP23183886.3A priority patent/EP4243094B1/en
Publication of WO2013039344A2 publication Critical patent/WO2013039344A2/ko
Publication of WO2013039344A3 publication Critical patent/WO2013039344A3/ko
Priority to US14/671,491 priority patent/US9634193B2/en
Priority to US14/920,790 priority patent/US10297720B2/en
Priority to US15/132,887 priority patent/US10319884B2/en
Priority to US15/226,304 priority patent/US10439105B2/en
Priority to US16/571,604 priority patent/US10756237B2/en

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    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)

Abstract

발광 다이오드 및 그것을 제조하는 방법이 개시된다. 이 발광 다이오드는, 제 1 도전형 반도체층과， 제 1 도전형 반도체층 상에 서로 이격되어 배치되고, 각각 활성층 및 제 2 도전형 반도체층을 포함하는 복수의 메사들과， 각각 복수의 메사들 상에 위치하여 제 2 도전형 반도체층에 오믹 콘택하는 반사 전극들과， 복수의 메사들 및 제 1 도전형 반도체층을 덮되， 메사들로부터 전기적으로 절연되고， 각각의 메사 상부 영역 내에 반사 전극들을 노출시키는 개구부들을 포함하고， 제 1 도전형 반도체층에 오믹콘택하는 전류 분산층을 포함한다. 이에 따라, 전류 분산 성능을 개선한 발광 다이오드가 제공될 수 있다.
PCT/KR2012/007358 2011-09-15 2012-09-14 발광 다이오드 및 그것을 제조하는 방법 WO2013039344A2 (ko)

Priority Applications (15)

Application Number Priority Date Filing Date Title
CN201280045164.5A CN103828073B (zh) 2011-09-16 2012-09-14 发光二极管及制造该发光二极管的方法
EP17165501.2A EP3223320B1 (en) 2011-09-16 2012-09-14 Light emitting diode
EP23183886.3A EP4243094B1 (en) 2011-09-16 2012-09-14 Light emitting diode and patterned substrate for the same
EP18158047.3A EP3361517B1 (en) 2011-09-16 2012-09-14 Light emitting diode
EP21185027.6A EP3926698B1 (en) 2011-09-16 2012-09-14 Light emitting diode
EP12832213.8A EP2757598B1 (en) 2011-09-16 2012-09-14 Light emitting diode
EP22184977.1A EP4109570A1 (en) 2011-09-16 2012-09-14 Light emitting diode
US14/345,382 US20140361327A1 (en) 2011-09-15 2012-09-14 Light emitting diode and method of manufacturing the same
EP18166240.4A EP3364467B1 (en) 2011-09-16 2012-09-14 Light emitting diode
JP2014530591A JP5869678B2 (ja) 2011-09-16 2012-09-14 発光ダイオード及びそれを製造する方法
US14/671,491 US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same
US15/132,887 US10319884B2 (en) 2011-09-16 2016-04-19 Light emitting diode
US15/226,304 US10439105B2 (en) 2011-09-16 2016-08-02 Light emitting diode and light emitting diode package
US16/571,604 US10756237B2 (en) 2011-09-16 2019-09-16 Light emitting diode and light emitting diode package

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20110093396 2011-09-16
KR10-2011-0093396 2011-09-16
KR10-2012-0015758 2012-02-16
KR1020120015758A KR20130094483A (ko) 2012-02-16 2012-02-16 발광 다이오드 칩 및 그의 제조 방법
KR1020120052722A KR20130128747A (ko) 2012-05-17 2012-05-17 응력 완화층을 가지는 발광 다이오드 및 그 형성방법
KR10-2012-0052722 2012-05-17

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US14/345,382 A-371-Of-International US20140361327A1 (en) 2011-09-15 2012-09-14 Light emitting diode and method of manufacturing the same
US14/671,491 Continuation US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 Continuation US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2013039344A2 WO2013039344A2 (ko) 2013-03-21
WO2013039344A3 true WO2013039344A3 (ko) 2013-05-10

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ID=47883888

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Application Number Title Priority Date Filing Date
PCT/KR2012/007358 WO2013039344A2 (ko) 2011-09-15 2012-09-14 발광 다이오드 및 그것을 제조하는 방법

Country Status (6)

Country Link
US (6) US20140361327A1 (ko)
EP (7) EP3361517B1 (ko)
JP (3) JP5869678B2 (ko)
CN (5) CN106067499B (ko)
DE (1) DE202012013620U1 (ko)
WO (1) WO2013039344A2 (ko)

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CN106058000B (zh) 2019-04-23
CN106067499A (zh) 2016-11-02
EP4109570A1 (en) 2022-12-28
EP3361517B1 (en) 2021-06-23
US10756237B2 (en) 2020-08-25
EP4243094B1 (en) 2024-05-22
JP5869678B2 (ja) 2016-02-24
EP4243094A3 (en) 2023-12-06
DE202012013620U1 (de) 2018-08-06
WO2013039344A2 (ko) 2013-03-21
CN106098889A (zh) 2016-11-09
US20160043282A1 (en) 2016-02-11
JP6858112B2 (ja) 2021-04-14
EP3361517A1 (en) 2018-08-15
EP2757598B1 (en) 2017-04-26
US20140361327A1 (en) 2014-12-11
EP3223320A1 (en) 2017-09-27
EP2757598A2 (en) 2014-07-23
CN106067499B (zh) 2019-04-05
US20150200334A1 (en) 2015-07-16
US20160233386A1 (en) 2016-08-11
CN106129195A (zh) 2016-11-16
EP2757598A4 (en) 2015-05-27
EP3364467A1 (en) 2018-08-22
US10297720B2 (en) 2019-05-21
CN106058000A (zh) 2016-10-26
US20160343911A1 (en) 2016-11-24

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