JP7255965B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP7255965B2 JP7255965B2 JP2017161277A JP2017161277A JP7255965B2 JP 7255965 B2 JP7255965 B2 JP 7255965B2 JP 2017161277 A JP2017161277 A JP 2017161277A JP 2017161277 A JP2017161277 A JP 2017161277A JP 7255965 B2 JP7255965 B2 JP 7255965B2
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title description 20
- 238000000605 extraction Methods 0.000 claims description 68
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 140
- 239000000758 substrate Substances 0.000 description 55
- 239000000463 material Substances 0.000 description 38
- 238000005253 cladding Methods 0.000 description 25
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 238000002955 isolation Methods 0.000 description 10
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Dicing (AREA)
Description
Claims (2)
- 第1主面と、前記第1主面とは反対側の第2主面とを有する光取出層と、前記光取出層の前記第1主面上に設けられる発光構造体と、を備える積層体を用意する工程と、
前記第2主面の一部領域に複数の柱状体を有するパターンマスクを形成する工程と、
前記パターンマスクが形成される領域に凹凸構造が形成され、前記パターンマスクが形成されずに露出する領域に平坦面により構成される底面を有する凹部が形成されるように前記第2主面をドライエッチングする工程と、
前記平坦面にレーザを照射し、前記平坦面の位置で少なくとも前記光取出層を切断して前記積層体を個片化する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記光取出層は、サファイア(Al2O3)層、窒化アルミニウム(AlN)層、酸化シリコン(SiOx)層、窒化ケイ素層(SiNx)または酸化アルミニウム層(Al2O3)であり、
前記発光構造体は、波長200nm以上360nm以下の紫外光を発する窒化アルミニウムガリウム(AlGaN)系半導体層を含むことを特徴とする請求項1に記載の半導体発光素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017161277A JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
US16/111,672 US10665751B2 (en) | 2017-08-24 | 2018-08-24 | Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
US16/838,468 US11164996B2 (en) | 2017-08-24 | 2020-04-02 | Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
Applications Claiming Priority (1)
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JP2017161277A JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019040980A JP2019040980A (ja) | 2019-03-14 |
JP7255965B2 true JP7255965B2 (ja) | 2023-04-11 |
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JP2017161277A Active JP7255965B2 (ja) | 2017-08-24 | 2017-08-24 | 半導体発光素子の製造方法 |
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US (2) | US10665751B2 (ja) |
JP (1) | JP7255965B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6719424B2 (ja) * | 2017-06-26 | 2020-07-08 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
CN110574175B (zh) * | 2018-07-27 | 2023-08-25 | 天津三安光电有限公司 | 一种半导体发光元件 |
US11271136B2 (en) | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
JP7169513B2 (ja) | 2019-12-23 | 2022-11-11 | 日亜化学工業株式会社 | 発光素子の製造方法 |
CN112166507B (zh) * | 2020-01-06 | 2022-07-22 | 厦门三安光电有限公司 | 一种发光二极管的制作方法 |
JP7428564B2 (ja) | 2020-03-25 | 2024-02-06 | 日機装株式会社 | 半導体発光素子 |
JP7371225B2 (ja) * | 2020-03-25 | 2023-10-30 | 富士フイルム株式会社 | 構造体の製造方法及び構造体 |
WO2021192697A1 (ja) * | 2020-03-25 | 2021-09-30 | 富士フイルム株式会社 | 構造体の製造方法 |
JP7089204B2 (ja) * | 2020-06-09 | 2022-06-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2024074702A1 (en) * | 2022-10-06 | 2024-04-11 | Ams-Osram International Gmbh | Light emitting device |
Citations (6)
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JP2013125836A (ja) | 2011-12-14 | 2013-06-24 | Panasonic Corp | サファイア基板のエッチング方法 |
US20140209949A1 (en) | 2013-01-25 | 2014-07-31 | Epistar Corporation | Light-emitting element comprising a reflective structure with high efficiency |
JP2014527313A (ja) | 2011-09-16 | 2014-10-09 | ソウル バイオシス カンパニー リミテッド | 発光ダイオード及びそれを製造する方法 |
US20140299901A1 (en) | 2013-04-08 | 2014-10-09 | Epistar Corporation | Light emitting diode and manufacturing method thereof |
JP2014229648A (ja) | 2013-05-20 | 2014-12-08 | シャープ株式会社 | 半導体発光素子 |
JP2015201488A (ja) | 2014-04-04 | 2015-11-12 | 旭化成イーマテリアルズ株式会社 | 積層体、及びこれを用いた発光素子の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005354020A (ja) * | 2004-05-10 | 2005-12-22 | Univ Meijo | 半導体発光素子製造方法および半導体発光素子 |
JP2008160063A (ja) * | 2006-10-20 | 2008-07-10 | Mitsubishi Chemicals Corp | 窒化物半導体発光ダイオード素子 |
JP2008130799A (ja) * | 2006-11-21 | 2008-06-05 | Sharp Corp | 半導体発光素子および半導体発光素子の製造方法 |
JP5074138B2 (ja) * | 2007-09-27 | 2012-11-14 | 昭和電工株式会社 | 発光ダイオードの製造方法 |
JP5261711B2 (ja) * | 2007-09-27 | 2013-08-14 | ローム株式会社 | ZnO系半導体及びZnO系半導体素子 |
JP2009105123A (ja) * | 2007-10-22 | 2009-05-14 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP5770446B2 (ja) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | 分割方法 |
CN103155182A (zh) * | 2011-06-24 | 2013-06-12 | 松下电器产业株式会社 | 氮化镓类半导体发光元件、光源和凹凸构造形成方法 |
JP5829453B2 (ja) * | 2011-08-09 | 2015-12-09 | スタンレー電気株式会社 | 半導体発光素子 |
WO2015016150A1 (ja) * | 2013-07-30 | 2015-02-05 | 独立行政法人情報通信研究機構 | 半導体発光素子およびその製造方法 |
CN105518879B (zh) * | 2013-09-02 | 2018-08-31 | Lg伊诺特有限公司 | 发光元件 |
JP2015170710A (ja) * | 2014-03-06 | 2015-09-28 | 旭化成株式会社 | 窒化物半導体素子の製造方法、窒化物半導体ウェハの分割方法および窒化物半導体素子 |
JP2016046461A (ja) * | 2014-08-26 | 2016-04-04 | 豊田合成株式会社 | 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法 |
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- 2017-08-24 JP JP2017161277A patent/JP7255965B2/ja active Active
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2018
- 2018-08-24 US US16/111,672 patent/US10665751B2/en active Active
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2020
- 2020-04-02 US US16/838,468 patent/US11164996B2/en active Active
Patent Citations (6)
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JP2014527313A (ja) | 2011-09-16 | 2014-10-09 | ソウル バイオシス カンパニー リミテッド | 発光ダイオード及びそれを製造する方法 |
JP2013125836A (ja) | 2011-12-14 | 2013-06-24 | Panasonic Corp | サファイア基板のエッチング方法 |
US20140209949A1 (en) | 2013-01-25 | 2014-07-31 | Epistar Corporation | Light-emitting element comprising a reflective structure with high efficiency |
US20140299901A1 (en) | 2013-04-08 | 2014-10-09 | Epistar Corporation | Light emitting diode and manufacturing method thereof |
JP2014229648A (ja) | 2013-05-20 | 2014-12-08 | シャープ株式会社 | 半導体発光素子 |
JP2015201488A (ja) | 2014-04-04 | 2015-11-12 | 旭化成イーマテリアルズ株式会社 | 積層体、及びこれを用いた発光素子の製造方法 |
Also Published As
Publication number | Publication date |
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US20200235265A1 (en) | 2020-07-23 |
US11164996B2 (en) | 2021-11-02 |
US10665751B2 (en) | 2020-05-26 |
JP2019040980A (ja) | 2019-03-14 |
US20190067519A1 (en) | 2019-02-28 |
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