WO2013021644A1 - 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム - Google Patents
半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム Download PDFInfo
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- WO2013021644A1 WO2013021644A1 PCT/JP2012/005058 JP2012005058W WO2013021644A1 WO 2013021644 A1 WO2013021644 A1 WO 2013021644A1 JP 2012005058 W JP2012005058 W JP 2012005058W WO 2013021644 A1 WO2013021644 A1 WO 2013021644A1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/105—Esters of polyhydric alcohols or polyhydric phenols of pentaalcohols
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/106—Esters of polycondensation macromers
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
- C09J2301/162—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer the carrier being a laminate constituted by plastic layers only
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
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- C09J2467/00—Presence of polyester
- C09J2467/006—Presence of polyester in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to a method for manufacturing a semiconductor device and a semiconductor wafer surface protecting film used in the method.
- the semiconductor wafer thinning process in the manufacturing process of the semiconductor device is usually performed by grinding the circuit non-formed surface (back surface) of the semiconductor wafer. Protection of the circuit forming surface of the semiconductor wafer during back grinding is performed by various methods.
- the circuit formation surface of a semiconductor wafer made of a sapphire substrate is protected by the following method (for example, Patent Document 1 and Non-Patent Document 1). That is, a ceramic plate having a wax resin layer on the surface is prepared. Next, the wax resin layer is heated and melted to embed the circuit forming surface of the sapphire substrate in the molten wax resin layer. Then, the wax resin layer is cooled and solidified. Thereby, the entire circuit formation surface of the sapphire substrate is protected by the wax resin layer.
- the wax resin is usually composed of rosin wax (wax containing rosin, montan wax, phenol resin, etc., melting point of about 50 ° C.).
- a conventional semiconductor wafer protective film has a base material layer and an adhesive layer. And after sticking the adhesion layer of a semiconductor wafer protective film on the circuit formation surface of a semiconductor wafer, a semiconductor wafer is back ground. Thereafter, the semiconductor wafer protective film is peeled off by a tape peeling machine or the like.
- the conventional method using a semiconductor wafer protective film has a problem that the end of the sapphire substrate is easily damaged during backside grinding. That is, as shown in FIG. 3, in the wax method, since the entire end portion of the sapphire substrate 1 is embedded in the wax resin layer 2, the end portion of the sapphire substrate 1 is easily held stably. On the other hand, as shown in FIG. 4, in the conventional method using the semiconductor wafer protective film, the end portion of the sapphire substrate 1 is not embedded in the semiconductor wafer protective film 4. Is difficult to hold stably. For this reason, it is considered that the end portion of the sapphire substrate 1 is in contact with the grindstone 3 or the like and easily damaged during back surface grinding.
- the present invention has been made in view of such circumstances.
- the present invention relates to a method of manufacturing a semiconductor device that enables backside grinding without damage even in a hard and brittle semiconductor wafer such as a sapphire substrate, and the manufacturing method.
- An object of the present invention is to provide a suitable film for protecting the surface of a semiconductor wafer.
- the inventors of the present invention have found that damage to the end portion of the semiconductor wafer can be suppressed by holding the vicinity of the end portion of the semiconductor wafer with a raised portion (rim) during back grinding. Further, after extensive studies, the inventors have found a film structure that can form a raised portion (rim) relatively easily by thermocompression bonding and can maintain the shape of the raised portion (rim) well even at the temperature during back grinding. .
- the first of the present invention relates to the following semiconductor wafer surface protecting film.
- the softened layer tensile modulus at 60 ° C.
- the second of the present invention relates to the following method for manufacturing a semiconductor device.
- thermocompression bonding temperature TP in the step of forming the raised portion and the softening point temperature TmB of the softening layer (B) satisfy the relationship of the following general formula.
- the third aspect of the present invention relates to a semiconductor wafer press apparatus for pressing a mount frame.
- the semiconductor wafer, the ring frame A having a frame surrounding the semiconductor wafer, the semiconductor wafer surface protective film according to claim 1 attached over the circuit forming surface of the semiconductor wafer and the frame A,
- a semiconductor wafer press apparatus that sandwiches and presses a mount frame provided with an upper press plate having a heating mechanism and a lower press plate facing the upper press plate,
- the outer diameter DW of the semiconductor wafer and the inner diameter DA IN of the ring frame A satisfy the relationship of formula (1) DW ⁇ DA IN
- the lower press plate includes a convex portion on a surface facing the upper press plate,
- the semiconductor wafer press apparatus wherein an outer periphery of a contact surface of the convex portion with the mount frame when pressed is circular.
- the fourth aspect of the present invention relates to a semiconductor wafer mount apparatus for manufacturing a mount frame and a method for manufacturing a semiconductor device using the same.
- the outer diameter DW of the semiconductor wafer, and the inner diameter DA IN of the ring frame A, and the ring outer diameter DB OUT of the ring-shaped auxiliary member B, the ring diameter DB IN of the ring-shaped auxiliary member B has the formula (1)
- the relationship of DW ⁇ DB IN ⁇ DB OU T ⁇ DA IN is satisfied,
- the fifth of the present invention relates to the following method for manufacturing a semiconductor device.
- 1 ′ a step of preparing a semiconductor wafer
- 2 ′ a step of forming a raised portion substantially made of resin on the outer periphery of the semiconductor wafer
- 3 ′ a circuit forming surface of the semiconductor wafer on the semiconductor wafer surface protective film.
- 4 ' a step of grinding a non-circuit-formed surface of the semiconductor wafer held by the raised portion, and 5') a step of peeling the semiconductor wafer surface protection film.
- the storage modulus G B ridges made of resin (40) is not less than 10 MPa, a method of manufacturing a semiconductor device.
- the film for protecting the surface of a semiconductor wafer of the present invention can enable backside grinding without damaging even a hard and brittle semiconductor wafer such as a sapphire substrate.
- FIG. 7A is a diagram showing another embodiment of the pressing step
- FIGS. 7B to 7D are diagrams showing examples of the shape of the convex portion. It is a figure which shows the method of forming the protruding part different from the film for semiconductor surface protections on the outer periphery of a semiconductor wafer.
- the semiconductor wafer surface protection film of the present invention includes a base material layer (A) and a softening layer (B); if necessary, an adhesive layer (C) (see FIG. 1A) or A light adhesion layer (D) (refer to Drawing 1B) etc. may be further included.
- the thickness of the film referred to in the present invention is not limited, and may be referred to as a so-called sheet.
- the base material layer (A) has a function of suppressing the warpage of the semiconductor wafer and maintaining the shape when the semiconductor wafer surface protecting film and the semiconductor wafer are thermocompression bonded. Therefore, the base material layer (A) preferably has a storage elastic modulus of a certain level or higher at the thermocompression bonding temperature (any temperature of about 120 to 180 ° C.). Specifically, the storage elastic modulus G A (150) at 150 ° C. of the base material layer (A) is preferably 1 MPa or more, and more preferably 2 MPa or more.
- the storage elastic modulus of the base material layer (A) can be measured by the following method. That is, a sample film having a thickness of 500 ⁇ m made of a resin constituting the base material layer (A) is prepared. Next, the sample film was set in a dynamic viscoelasticity measuring apparatus (manufactured by TA Instruments: ARES), and the temperature rising rate was 3 ° C./min from 30 ° C. using a parallel plate attachment having a diameter of 8 mm. The storage elastic modulus is measured while raising the temperature to 200 ° C. The measurement frequency can be 1 Hz. After completion of the measurement, the value of the storage elastic modulus G (Pa) at 150 ° C. is read from the obtained storage elastic modulus-temperature curve of 30 to 200 ° C.
- a dynamic viscoelasticity measuring apparatus manufactured by TA Instruments: ARES
- the resin constituting the base material layer (A) only needs to satisfy the aforementioned storage elastic modulus.
- the resin constituting the base material layer (A) preferably has transparency.
- resins include polyolefins and polyesters. That is, the base material layer (A) can be a polyolefin film, a polyester film, a laminated film of a polyolefin layer and a polyester layer, or the like.
- the polyolefin film include a polypropylene film.
- the polyester film include a polyethylene terephthalate film and a polyethylene naphthalate film.
- the density of the resin constituting the base material layer (A) is preferably 900 to 1450 kg / m 3 . If the density of the resin constituting the substrate layer (A) is less than 900 kg / m 3 , the shape retention may not be sufficient because the storage elastic modulus is too low.
- the thickness of the base material layer (A) is, for example, preferably 5 ⁇ m or more, and more preferably 10 ⁇ m or more, from the viewpoint of obtaining rigidity sufficient to suppress warpage of the semiconductor wafer.
- the upper limit of the thickness of the base material layer (A) is set so that the total thickness of the semiconductor wafer surface protective film is not too thick with respect to the ground finish thickness of the semiconductor wafer from the viewpoint of preventing damage to the semiconductor wafer. Good.
- the softening layer (B) has a function of forming a raised portion (rim) around the semiconductor wafer in order to stably hold the end portion of the semiconductor wafer.
- the semiconductor wafer surface protective film and the semiconductor wafer may be thermocompression bonded to form a raised portion (rim), so the softening layer (B) is softened at the thermocompression bonding temperature (120 to 180 ° C.).
- the softening point temperature TmB of the softening layer (B) is preferably lower than the thermocompression bonding temperature (120 to 180 ° C.).
- the softening point temperature TmB can be obtained from DSC measurement. Specifically, the melting point (DSC method) of the resin material according to ISO-11357-3 is defined as the softening point temperature.
- the storage elastic modulus G B (40) at 40 ° C. is preferably 10 MPa or more, more preferably 20 MPa or more, and further preferably 30 MPa or more.
- the upper limit of the storage elastic modulus G B (40) at 40 ° C. can usually be about 500 MPa or less. In order to set the storage elastic modulus G B (40) at 40 ° C.
- the resin constituting the softened layer (B) may be a resin that is not an elastomer, as will be described later. preferable.
- the storage elastic modulus G is about 1/3 of the tensile elastic modulus E.
- “the storage elastic modulus G B (40) at 40 ° C. of the softened layer (B) is 10 MPa or more” means “the tensile elastic modulus E B (40) of the softened layer (B) at 40 ° C. is 30 MPa or more. Can also be said.
- the back surface grinding is usually performed by a wet method, but may be further performed by a dry method if necessary.
- the temperature of the wafer at the time of dry backside grinding (dry polishing) may be around 100 ° C. because the frictional heat between the grindstone and the semiconductor wafer is large.
- the raised portions even during the dry polishing (rim) to not soften preferably has a storage modulus G B at 100 ° C. of softening layer (B) (100) is 1MPa or more, 3 MPa or more More preferably.
- the temperature of the semiconductor wafer when the back surface of the semiconductor wafer is ground changes within a range of 25 ° C. to 60 ° C. Therefore, by setting the rate of change of the storage elastic modulus of the softened layer (B) within this temperature range within a certain range, the raised portion made of the softened layer (B) can stably hold the semiconductor wafer.
- the protruding part which consists of a softening layer (B) deteriorates during the back surface grinding of a semiconductor wafer. Therefore, damage to the semiconductor wafer during back grinding of the semiconductor wafer can be more effectively suppressed.
- the tensile elastic modulus E of the softened layer (B) can be measured as follows. i) A film having a thickness of 100 ⁇ m is cut to prepare a strip-shaped sample piece having a width (TD direction) of 10 mm and a length (MD direction) of 100 mm. ii) Next, in accordance with JIS K7161, the tensile modulus of the sample piece is measured with a tensile tester under conditions of a distance between chucks of 50 mm and a tensile speed of 300 mm / min. The tensile elastic modulus is measured under conditions of a temperature of 23 ° C. and a relative humidity of 55%. The tensile modulus E is often about three times the storage modulus G.
- the resin constituting the softened layer (B) is not particularly limited as long as it satisfies the storage elastic modulus, but is preferably not an elastomer. Specifically, a homopolymer or copolymer of a hydrocarbon olefin is preferable, and an ethylene homopolymer, a propylene homopolymer, or a copolymer of ethylene or propylene and another hydrocarbon olefin is more preferable. On the other hand, for example, an ethylene / vinyl acetate copolymer (EVA) is not preferred because it usually has a storage elastic modulus G (40) at 40 ° C. of about 0.01 MPa to 0.1 MPa and less than 10 MPa.
- EVA ethylene / vinyl acetate copolymer
- the hydrocarbon olefin other than ethylene or propylene in the copolymer of ethylene or propylene and other hydrocarbon olefins is preferably an ⁇ -olefin having 3 to 12 carbon atoms.
- ⁇ -olefins having 3 to 12 carbon atoms include propylene, 1-butene, 1-pentene, 3-methyl-1-butene, 1-hexene, 4-methyl-1-pentene, 3-methyl-1 -Pentene, 1-heptene, 1-octene, 1-decene, 1-dodecene and the like are included, and propylene, 1-butene and the like are preferable.
- Preferred specific examples of the resin constituting the softening layer (B) include linear low density polyethylene (LLDPE), low density polyethylene, high density polyethylene, polypropylene, polystyrene, ABS resin, vinyl chloride resin, methyl methacrylate resin, Nylon, fluororesin, polycarbonate, polyester resin and the like are included, and linear low density polyethylene (LLDPE), low density polyethylene, high density polyethylene, polypropylene and the like are preferable.
- the density of the resin constituting the softening layer (B) is preferably 880 to 960 kg / m 3 , more preferably 900 to 960 kg / m 3 , and even more preferably 910 to 950 kg / m 3. . If the density of the resin constituting the softened layer (B) is less than 880 kg / m 3 , it may be softened at 40 ° C. On the other hand, if the density of the resin exceeds 960 kg / m 3 , it may be difficult to soften at the thermocompression bonding temperature.
- the storage elastic modulus of the softened layer (B) is the density of the homopolymer of ethylene or propylene, the type of hydrocarbon olefin other than ethylene or propylene in the copolymer of ethylene or propylene and other hydrocarbon olefins, and the It can be adjusted by the content ratio. For example, in order to increase the storage elastic modulus at 40 ° C. of the softened layer (B), for example, the density of a homopolymer of ethylene or propylene is increased, or the copolymer weight of ethylene or propylene and other hydrocarbon olefins is increased. What is necessary is just to raise the content rate of ethylene or propylene in a coalescence.
- the thickness of the softening layer (B) may be such that the rim can be formed by thermocompression bonding with the semiconductor wafer and the unevenness on the surface of the semiconductor wafer can be embedded. Therefore, the thickness of the softened layer (B) is preferably larger than the maximum value of the step on the circuit forming surface of the semiconductor wafer, and is preferably 1.1 times or more the maximum value of the step. Specifically, if the step is 50 ⁇ m, it is more preferably 55 ⁇ m or more, and further preferably 60 ⁇ m or more.
- the thickness of the softened layer (B) is preferably 100 ⁇ m or less, and more preferably 70 ⁇ m or less.
- the softening layer (B) may further contain other resins and additives as necessary.
- additives include ultraviolet absorbers, antioxidants, heat stabilizers, lubricants, softeners and the like.
- the film for semiconductor wafer surface protections of this invention further contains an adhesion layer (C).
- the pressure-sensitive adhesive layer (C) only needs to have a minimum pressure-sensitive adhesive force. Specifically, the pressure-sensitive adhesive force measured according to JIS Z0237 is 0.1 to 10 N / 25 mm. preferable.
- the storage elastic modulus of the pressure-sensitive adhesive layer (C) may be a level that does not hinder the formation of the raised portion (rim) of the softened layer (B).
- the pressure-sensitive adhesive (pressure-sensitive adhesive) constituting the pressure-sensitive adhesive layer (C) can be an acrylic pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, or a rubber-based pressure-sensitive adhesive.
- an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer is preferable in order to facilitate adjustment of adhesive force.
- the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer (C) may be a radiation curable pressure-sensitive adhesive. This is because the pressure-sensitive adhesive layer composed of the radiation-curable pressure-sensitive adhesive is cured by irradiation with radiation and can be easily peeled off from the wafer.
- the radiation can be ultraviolet, electron beam, infrared, and the like.
- the radiation curable pressure-sensitive adhesive may contain the above-mentioned pressure-sensitive adhesive main component, a compound having a carbon-carbon double bond in the molecule, and a radiation polymerization initiator; or a carbon-carbon double in the molecule. It may contain an adhesive main agent having a polymer having a bond as a base polymer and a radiation polymerization initiator.
- Examples of compounds having a carbon-carbon double bond in the molecule include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetraethylene glycol di (meth) Acrylate and the like are included.
- the content of the radiation curable compound can be about 30 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive adhesive.
- radiation polymerization initiators include: acetophenone photopolymerization initiators such as methoxyacetophenone; ⁇ -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone; benzyldimethyl ketal A benzoin photopolymerization initiator such as benzoin and benzoin methyl ether; and a benzophenone photopolymerization initiator such as benzophenone and benzoylbenzoic acid.
- acetophenone photopolymerization initiators such as methoxyacetophenone
- ⁇ -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone
- benzyldimethyl ketal A benzoin photopolymerization initiator such as benzoin and benzoin methyl ether
- a benzophenone photopolymerization initiator such as benzophenone and benzoylbenzoic acid.
- the radiation curable pressure-sensitive adhesive may further contain a crosslinking agent as required.
- a crosslinking agent include isocyanate crosslinking agents such as diphenylmethane diisocyanate, tolylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate.
- the thickness of the pressure-sensitive adhesive layer (C) is not limited as long as the rim formation by the softened layer (B) is not hindered, for example, about 1 to 20% with respect to the thickness of the softened layer (B). It can be about 20 ⁇ m.
- the film for semiconductor wafer surface protections of this invention has the light adhesion layer (D) for adhere
- Examples of the material of the light pressure-sensitive adhesive layer (D) include an acrylic pressure-sensitive adhesive.
- the base material layer (A) and the softened layer (B) can be separated from each other. Therefore, the base material layer (A) can be peeled and removed from the semiconductor wafer surface protective film after the semiconductor wafer surface protective film is attached to the semiconductor wafer. For example, after the step (see FIG. 2C) of forming the raised portion of the semiconductor surface protection film on the outer periphery of the semiconductor wafer, before the step of grinding the circuit non-formation surface of the semiconductor wafer (see FIG. 2E), The base material layer (A) may be peeled off from the semiconductor wafer surface protecting film.
- the semiconductor wafer surface protecting film may be bent or vibrated by the load of the grinding wheel, thereby preventing precise grinding.
- the semiconductor wafer surface protective film is thinned, bending and vibration of the semiconductor wafer surface protective film are suppressed. Therefore, more precise grinding can be realized.
- the semiconductor wafer surface protecting film of the present invention may further include other layers as necessary.
- the other layer may be a release film, for example.
- the semiconductor wafer surface protecting film includes a base material layer (A) and a softening layer (B).
- the substrate layer (A) is preferably disposed on the outermost surface of the semiconductor wafer surface protecting film.
- the semiconductor wafer surface protecting film further includes an adhesive layer (C)
- the adhesive layer (C) is preferably disposed on the outermost surface opposite to the base material layer (A).
- the softening layer (B) may be a single layer or a plurality of layers.
- FIG. 1A and FIG. 1B are diagrams showing an example of the structure of a semiconductor wafer surface protecting film.
- the semiconductor wafer surface protecting film 10 includes a base material layer (A) 12, a softening layer (B) 14, and an adhesive layer (C) 16.
- the semiconductor wafer surface protecting film 10 ′ includes a base material layer (A) 12, a light adhesive layer (D) 18, a softening layer (B) 14, and an adhesive layer (C) 16. And have.
- the semiconductor wafer surface protecting films 10 and 10 ′ are used so that the adhesive layer (C) 16 is in contact with the circuit forming surface of the semiconductor wafer.
- the semiconductor wafer surface protecting film of the present invention can be produced by any method. For example, 1) a method of coextruding a base material layer (A) and a softening layer (B) to obtain a film for protecting a semiconductor wafer surface (coextrusion forming method); 2) a film-like base material layer (A) And a film-like softening layer (B) are laminated (laminated) to obtain a semiconductor wafer surface protecting film (laminate method).
- the semiconductor wafer surface protecting film further including the adhesive layer (C) can be produced by coating and forming an adhesive layer coating solution on the laminated film of the base layer (A) and the softened layer (B).
- An example of a manufacturing method of a semiconductor device using the semiconductor wafer surface protecting film of the present invention is as follows: 1) a step of placing a semiconductor wafer on the semiconductor wafer surface protecting film (mounter step), and 2) A step of forming a raised portion of a semiconductor wafer surface protecting film for holding the semiconductor wafer on the outer periphery of the semiconductor wafer (pressing step); and 3) a step of grinding a non-circuit-formed surface of the semiconductor wafer held by the raised portion; 4) The process of peeling the film for semiconductor wafer surface protections is included.
- the step of grinding the non-circuit-formed surface of the semiconductor wafer held by the semiconductor wafer surface protection film is a process of thinning the semiconductor wafer to a predetermined thickness without breaking or damaging the semiconductor wafer. Means that. After performing these steps, a step of dicing the semiconductor wafer into chips may be further performed.
- Another example of a method for manufacturing a semiconductor device using a semiconductor wafer surface protecting film is as follows: 1 ′) a step of preparing a semiconductor wafer; and 2 ′) a raised portion made substantially of resin on the outer periphery of the semiconductor wafer.
- a step, 3 ′) a step of disposing a circuit forming surface of the semiconductor wafer on the semiconductor wafer surface protecting film, 4 ′) a step of grinding the non-circuit forming surface of the semiconductor wafer held by the raised portions, and 5 ′.
- a step of peeling the semiconductor wafer surface protecting film Either 2 ′) the step of forming the raised portion or 3 ′) the step of disposing the circuit forming surface of the semiconductor wafer on the semiconductor wafer surface protecting film may be performed first.
- the raised portion substantially made of resin formed on the outer periphery of the semiconductor wafer may be made of a resin material different from the material constituting the film for protecting the semiconductor wafer surface.
- the semiconductor wafer surface protective film is not limited to the above-described semiconductor wafer surface protective film of the present invention, and may be a commonly used semiconductor wafer surface protective film.
- the storage elastic modulus G B (40) of the bulging portion substantially made of resin may be 10 MPa or more; and the storage elastic modulus G B (100) is preferably 1 MPa or more.
- the combination of the semiconductor wafer formed through the process 2 'and the raised portion (rim) substantially made of resin disposed on the outer periphery thereof is also referred to as a rim-attached semiconductor wafer.
- the semiconductor wafer with a rim has only to include a semiconductor wafer and a bulge portion substantially made of a resin; it has a bulge portion substantially made of a semiconductor wafer and a resin, and a semiconductor wafer surface protection film that supports them. You may do it.
- the semiconductor wafer surface protecting film is affixed to the circuit forming surface of the semiconductor wafer.
- a step of arranging a ring frame (see reference numeral 30 in FIG. 2B) so as to surround the semiconductor wafer may be included.
- the step of disposing the ring frame may be performed after 1 ′) preparing the semiconductor wafer and before 4 ′) grinding. Further, it is only necessary to have a raised portion in the gap between the ring frame (see reference numeral 30 in FIG. 2B) and the semiconductor wafer.
- the distance between the raised portion and the edge of the semiconductor wafer is preferably 0 to 1 mm, more preferably 0 to 500 ⁇ m, and the raised portion and the edge of the semiconductor wafer are in contact with each other. Is more preferable. This is because the raised portion holds the semiconductor wafer.
- the semiconductor wafer is not particularly limited, and may be a silicon substrate or a sapphire substrate on which a circuit such as a wiring, a capacitor, a diode, or a transistor is formed on the surface.
- a semiconductor wafer including a high-hardness material substrate having a Mohs hardness of 8 or more is formed by forming a raised portion (rim) on the outer periphery of the semiconductor wafer with the film for protecting the surface of the semiconductor wafer of the present invention and polishing the non-circuit-formed surface of the wafer. Even if it exists, damage to the semiconductor wafer can be suppressed.
- the semiconductor wafer of the present invention may be one in which a semiconductor layer such as GaN is stacked on a sapphire substrate.
- a sapphire substrate on which a circuit is formed is preferably used.
- the size of the semiconductor wafer is not particularly limited, and may be 2 inches, 4 inches, 6 inches, 8 inches, or the like.
- a step of 1 ⁇ m to 50 ⁇ m is provided on the circuit forming surface of the semiconductor wafer.
- the raised portion (rim) of the semiconductor wafer surface protecting film formed around the semiconductor wafer is a portion formed on the outer periphery of the semiconductor wafer and holding the end portion of the semiconductor wafer.
- the raised portion of the semiconductor wafer surface protecting film may be composed of the semiconductor wafer surface protecting film itself; or may be composed of a material different from the material constituting the semiconductor wafer surface protecting film.
- the following method can be used to form the raised portion with a resin material different from the material constituting the semiconductor wafer surface protecting film.
- the semiconductor wafer may be a semiconductor wafer mounted on a semiconductor wafer surface protecting film, or may be a semiconductor wafer before being mounted.
- Method 1) As shown in FIG. 8A, a method of applying and curing the liquid adhesive 105 around the semiconductor wafer 20 with a coating apparatus such as a dispenser 100.
- Method 2) As shown in FIG. 8B, the semiconductor wafer 20 is inserted into a resin ring 110 having a through hole having substantially the same diameter as that of the semiconductor wafer 20.
- Method 3) As shown in FIG. 8C, in the cavity 125 of the mold 120 into which the semiconductor wafer 20 is inserted. , A method of injecting molten resin, cooling and solidifying, and molding the resin around the semiconductor wafer
- the viscosity at the time of application of the liquid adhesive 105 is applied by the dispenser 100 may be about 1 ⁇ 500 Pa ⁇ s; the storage modulus of the cured product of the adhesive 105 G B (40)
- the storage elastic modulus G B (100) is preferably 1 MPa or more. That is, the cured product of the adhesive 105 preferably has an elastic modulus similar to that of the softened layer (B) in the semiconductor wafer surface protecting film described above.
- the liquid adhesive 105 include epoxy resin, acrylic resin, urethane resin, phenol resin, and the like.
- the storage elastic modulus G B (40) of the resin ring 110 having a through-hole having the same diameter as that of the semiconductor wafer 20 may be 10 MPa or more: the storage elastic modulus G B (100) Is preferably 1 MPa or more. That is, a material having the same elastic modulus as that of the softened layer (B) in the aforementioned semiconductor wafer surface protecting film is preferable.
- the resin constituting the resin ring 110 include polyethylene (high density polyethylene, low density polyethylene, etc.), polypropylene (homopolypropylene, random polypropylene, etc.), polystyrene, nylon, and the like.
- the molten resin to be injected into the cavity 125 of the mold 120 may be an epoxy resin or the like, and the storage elastic modulus G B (40) of the molten resin after cooling and solidification may be 10 MPa or more;
- the storage elastic modulus G B (100) is preferably 1 MPa or more. That is, a material having the same elastic modulus as that of the softened layer (B) in the aforementioned semiconductor wafer surface protecting film is preferable.
- the raised portion (rim) formed around the semiconductor wafer can be formed by any method, but the raised portion (rim) can be formed relatively easily and is easy to handle.
- the semiconductor wafer surface protecting film of the invention is preferably formed by thermocompression bonding.
- the storage elastic modulus G (100) at 100 ° C. of the raised portion is preferably 1 MPa or more.
- the storage elastic modulus of the bulge is It becomes the same as the storage elastic modulus of the softened layer (B).
- the ridge is somewhat flexible so that the grindstone is not easily damaged due to contact with the bulge, and the grindstone can efficiently contact the non-circuit-formed surface of the semiconductor wafer. It is preferably substantially formed of a resin.
- FIG. 2A is a diagram showing an example of a process (mounting process) for placing a semiconductor wafer on the semiconductor wafer surface protecting film
- FIG. 2B is a diagram showing a laminate in which the semiconductor wafer is placed on the semiconductor wafer surface protecting film.
- FIG. 2C is a view showing an example of a step (pressing step) of forming a raised portion of the semiconductor surface protecting film on the outer periphery of the semiconductor wafer;
- FIG. 2D is an enlarged view showing an example of the raised portion;
- 2E is a diagram illustrating an example of a process of grinding a circuit non-formation surface of a semiconductor wafer.
- FIG. 2A The example which arrange
- the semiconductor wafer surface protecting film 10 cut out to a size larger than the semiconductor wafer 20 is prepared.
- the semiconductor wafer 20 is placed on the semiconductor wafer surface protecting film 10 (step (1)).
- the circuit forming surface 20A of the semiconductor wafer 20 is brought into contact with the adhesive layer (C) 16 of the semiconductor wafer surface protecting film 10.
- the semiconductor wafer 20 and the ring frame 30 surrounding the semiconductor wafer 20 are placed on the hot plate 40. Further, the semiconductor wafer surface protecting film 10 is placed on the semiconductor wafer 20 and the ring frame 30. At this time, the circuit forming surface 20A of the semiconductor wafer 20 and the adhesive layer (C) 16 of the semiconductor wafer surface protecting film 10 are brought into contact with each other.
- the roll 35 is pressed against the semiconductor wafer 20 from one end of the semiconductor wafer surface protecting film 10 to the other end while rotating the roll 35.
- the semiconductor wafer surface protective film 10 is in close contact with the circuit forming surface 20A of the semiconductor wafer 20.
- the hot plate 40 may remain at room temperature; however, the hot plate 40 is heated to remove the semiconductor wafer surface protection film 10 from the hot plate 40. You may heat until it reaches temperature (TM).
- the temperature (TM) of the semiconductor wafer surface protective film 10 in the mounting step is the temperature (TP) of the semiconductor wafer surface protective film 10 in the step (described later) of forming a raised portion of the semiconductor surface protective film on the outer periphery of the semiconductor wafer. It is preferable that the temperature is the same as or higher than that. Although the details of the reason will be described later, wrinkles occur in the semiconductor wafer surface protective film 10 in the step of forming the raised portions, or the semiconductor wafer 20 is removed from the semiconductor wafer surface protective film 10 after the step of forming the raised portions. This is because they may peel off.
- the semiconductor wafer 20 is removed from the hot plate 40 together with the semiconductor wafer surface protection film 10 and the ring frame 30, and the semiconductor wafer is disposed on the semiconductor wafer surface protection film as shown in FIG. 2B. Get things.
- This laminate is referred to as a “mount frame”.
- the semiconductor wafer 20 and the semiconductor wafer surface protecting film 10 are bonded to a pair of hot plates (upper hot plate 22-1 and lower hot plate 22-2) of a hot press machine.
- Thermocompression bonding step (2)).
- the semiconductor wafer 20 is pushed into the melted softened layer (B) 14, and the softened layer (B) 14 pushed out thereby forms a raised portion (rim) 24 near the end of the semiconductor wafer 20.
- the upper heating plate 22-1 is a heating plate disposed on the semiconductor wafer 20 side;
- the lower heating plate 22-2 is a heating plate disposed on the semiconductor wafer protection film 10 side.
- the upper heating plate 22-1 and the semiconductor wafer 20 may be in direct contact with each other or via some member (for example, a jig).
- the lower heating plate 22-2 and the semiconductor wafer protective film 10 may be in direct contact with each other or via some member (for example, a jig).
- the height of the raised portion (rim) 24 is preferably about 0.2 to 1 times the thickness of the semiconductor wafer 20 to be back-ground, for example. If the height of the raised portion (rim) 24 is too low, the end portion of the semiconductor wafer 20 may not be stably held. Specifically, when the back surface of the semiconductor wafer 20 having a thickness of 1000 ⁇ m is processed, the height of the raised portion (rim) 24 is preferably 200 ⁇ m or more. Further, FIG. 2B shows a mode in which the corner of the end portion of the semiconductor wafer 20 is not removed, but the end portion of the semiconductor wafer 20 is chamfered (straight) or R-processed (curved) to remove the corner. May be.
- the height of the raised portion (rim) 24 is the thickness of the end of the semiconductor wafer after chamfering or R-processing. It may be a substantial amount.
- thermocompression bonding temperature TP thermocompression bonding temperature
- the press pressure may be any conditions that allow the softened layer (B) 14 to melt and form the raised portion (rim) 24.
- the pressing pressure is preferably 1 to 10 MPa, and more preferably 3 to 10 MPa.
- the pressing time can be, for example, about 1 to 5 minutes.
- the thermocompression bonding temperature TP is preferably in the range of 120 to 180 ° C, more preferably in the range of 130 to 170 ° C, and further preferably 150 ° C.
- the thermocompression bonding temperature (TP) is an average temperature of a pair of hot plates (upper hot plate 22-1 and lower hot plate 22-2) of the press.
- thermocompression bonding temperature (TP) is preferably the same as or lower than the temperature (TM) of the semiconductor wafer surface protecting film 10 in the mounting step described above.
- the semiconductor wafer surface protecting film 10 is about to thermally expand by heating during the pressing process; if the thermocompression bonding temperature (TP) is equal to or lower than the temperature (TM) in the mounting process, the semiconductor wafer surface protecting film is used in the pressing process.
- the degree of thermal expansion of the film 10 is about the same as or smaller than the degree of thermal expansion of the semiconductor wafer surface protecting film 10 in the mounting step.
- the semiconductor wafer surface protecting film 10 that has been sufficiently thermally expanded in the mounting process is fixed to the semiconductor wafer, the semiconductor wafer surface protecting film 10 is less likely to thermally expand in the pressing process, and wrinkles are less likely to occur.
- the thermocompression bonding temperature (TP) and the temperature (TM) are not properly adjusted, wrinkles are likely to occur around the semiconductor wafer 20 of the semiconductor wafer surface protecting film 10.
- the semiconductor wafer surface protecting film 10 when the semiconductor wafer surface protecting film 10 is cooled after the pressing step, the semiconductor wafer surface protecting film 10 and the semiconductor wafer 20 may be separated (the semiconductor wafer 20 floats from the film 10).
- This peeling is also suppressed by setting the thermocompression bonding temperature (TP) to be equal to or lower than the temperature (TM) in the mounting process.
- TP thermocompression bonding temperature
- TM temperature
- thermocompression bonding temperature (TP) is preferably higher than the softening temperature (TmB) of the softening layer (B) of the semiconductor wafer surface protecting film 10.
- TmB softening temperature
- the thermocompression bonding temperature (TP) is preferably lower than “the softening temperature (TmB) + 40 ° C. of the softening layer (B) of the semiconductor wafer surface protecting film 10”.
- thermocompression bonding temperature (TP) is excessively high, the shape of the raised portion (rim) 24 formed by softening the softened layer (B) cannot be maintained and may flow and become a flat shape. Thereby, the height of the raised portion (rim) 24 may be lowered.
- thermocompression bonding temperature (TP) is an average temperature of a pair of hot plates (upper hot plate 22-1 and lower hot plate 22-2) of the press machine.
- the temperature (TP1) of the upper heating plate 22-1 and the temperature (TP2) of the lower heating plate 22-2 may be the same temperature, but the temperature (TP1) of the upper heating plate 22-1 is set to the lower heating plate 22-1. It is preferably higher than the temperature (TP2) of -2.
- the temperature of the thermocompression bonding (TP) is higher, the raised portion (rim) 24 can be formed more quickly. However, if the temperature (TP2) of the lower heat plate 22-2 is higher, the shape of the raised portion (rim) 24 cannot be maintained. To flow and flatten.
- the raised portion (at the TP1) of the upper heating plate 22-1 ( The shape of the rim) 24 is difficult to flatten. Therefore, by setting the temperature (TP1) of the upper heating plate 22-1 to be higher than the temperature (TP2) of the lower heating plate 22-2, it is possible to quickly raise the raised portion while maintaining the shape of the raised portion (rim) 24. A (rim) 24 can be formed.
- the temperature (TP1) of the upper heating plate 22-1 is higher than “the softening temperature (TmB) + 20 ° C. of the softening layer (B) of the semiconductor wafer surface protection film 10”. It is preferably lower than the “softening temperature (TmB) + 40 ° C. of the softening layer (B) of the film 10”.
- the temperature (TP2) of the lower heating plate 22-2 is higher than “the temperature (TP1) of the upper heating plate 22-1 ⁇ 40 ° C.” and lower than the “temperature (TP1) of the upper heating plate 22-1”.
- the thermocompression bonding temperature (TP) is higher than the “temperature of the upper heating plate 22-1 (TP1) ⁇ 20 ° C.” and lower than the “temperature of the upper heating plate 22-1 (TP1)”. preferable.
- the height of the raised portion (rim) 24 is the height from the surface of the semiconductor wafer surface protection film 10 that contacts the circuit forming surface of the semiconductor wafer 20 to the apex of the raised portion (rim) 24. Is defined as h.
- the height of the raised portion (rim) 24 can be measured by observing the cross-sectional shape of the semiconductor wafer surface protecting film 10 after the semiconductor wafer 20 is peeled off with a microscope.
- the raised portion (rim) 24 may not necessarily be in contact with the end portion of the semiconductor wafer 20, but is preferably in contact with the end portion of the semiconductor wafer 20 in order to improve the retention of the semiconductor wafer 20.
- the semiconductor wafer surface protecting film 10 is set on the chuck table 26 together with the semiconductor wafer 20.
- the semiconductor wafer surface protecting film may have a light adhesive layer (D) between the base material layer (A) and the softened layer (B) (see FIG. 1B).
- the semiconductor wafer surface protecting film 10 may be set on the chuck table 26 after removing the base material layer (A).
- the non-circuit-formed surface (back surface) 20B of the semiconductor wafer is ground with the grindstone 28 until the wafer thickness becomes a certain value or less (step (3)).
- the thickness of the semiconductor wafer after back grinding can be, for example, 300 ⁇ m or less, preferably 100 ⁇ m or less.
- the grinding process is a mechanical grinding process using a grindstone.
- the grinding method is not particularly limited, and may be a known grinding method such as a through-feed method or an in-feed method. The grinding may be performed not only by wet grinding (wet polishing) but also by dry grinding (dry polishing).
- the semiconductor wafer surface protecting film 10 is peeled off at room temperature (step (4)).
- the semiconductor wafer surface protecting film 10 can be peeled off by, for example, a known tape peeling machine.
- the semiconductor wafer surface protecting film 10 includes a radiation curable adhesive layer (C)
- the semiconductor wafer surface protecting film 10 is irradiated with radiation to cure the adhesive layer (C), thereby protecting the semiconductor wafer surface.
- the film 10 is peeled from the semiconductor wafer 20.
- the non-circuit-formed surface (back surface) of the semiconductor wafer is processed between the step (3) of grinding the back surface of the semiconductor wafer and the step (4) of peeling the film for protecting the semiconductor wafer surface from the semiconductor wafer.
- the process to do may be included.
- the process of processing the circuit non-formation surface (back surface) of the semiconductor wafer may further perform, for example, a process selected from the group consisting of a metal sputtering process, a plating process, and a heat treatment process.
- the heat treatment step can be, for example, a step of applying a die bonding tape under heating.
- the semiconductor wafer is diced.
- the semiconductor wafer may be diced without peeling off the semiconductor wafer surface protecting film 10.
- the semiconductor wafer surface protective film of the present invention can be formed on a semiconductor wafer surface protective film with a raised portion (rim) on the outer periphery of the semiconductor wafer by thermocompression bonding with the semiconductor wafer under predetermined conditions. Further, the raised portion (rim) formed by the semiconductor wafer surface protecting film of the present invention does not melt even at the ultimate temperature (about 40 ° C.) of the semiconductor wafer at the time of back grinding, so that the shape can be maintained satisfactorily. Therefore, at the time of grinding the back surface of the semiconductor wafer, the end portion of the semiconductor wafer can be stably held by the raised portion (rim), and damage to the end portion of the semiconductor wafer due to contact with the grindstone can be suppressed. Therefore, even if the semiconductor wafer is a hard and brittle sapphire substrate, the back surface can be ground without damaging the substrate.
- the semiconductor wafer surface protective film includes an adhesive layer (C) that is cured by radiation
- the semiconductor wafer surface protective film can be easily peeled by irradiating the semiconductor wafer surface protective film with radiation. .
- the semiconductor wafer 20 is arranged inside the ring frame 30 having a frame; one surface of the semiconductor wafer 20 (usually a surface on which a circuit is formed). 20A) and the ring frame 30, the semiconductor wafer surface protecting film 10 is attached (see FIG. 2A).
- the semiconductor wafer protection film may loosen between the semiconductor wafer 20 and the ring frame 30. Therefore, it is preferable to arrange the ring-shaped auxiliary member 50 between the ring frame 30 and the semiconductor wafer 20 (see FIGS. 5A and 5B).
- the outer diameter DW of the semiconductor wafer 20, the inner diameter DA IN of the ring frame 30, the ring outer diameter DB OUT of the ring-shaped auxiliary member 50, and the ring inner diameter DB IN of the ring-shaped auxiliary member 50 are expressed by the formula (1).
- the relationship of DW ⁇ DB IN ⁇ DB OU T ⁇ DA IN is satisfied (see FIG. 5A).
- the mounting process can be performed with a semiconductor wafer mounting apparatus.
- the semiconductor wafer mount apparatus has a heating unit, a tape applying unit, and a tape cutting mechanism.
- the heating unit is, for example, a hot plate 40 on which a premount frame is placed.
- the premount frame means a structure including the semiconductor wafer 20, a ring-shaped auxiliary member 50 surrounding the semiconductor wafer, and a ring frame 30 surrounding the ring-shaped auxiliary member 50 (FIG. 5A).
- the premount frame is placed on the hot plate 40 such that the surface (circuit non-formed surface) opposite to the circuit forming surface 20 ⁇ / b> A of the semiconductor wafer 20 faces the hot plate 40.
- the tape application unit includes the circuit forming surface 20A of the semiconductor wafer 20, the ring-shaped auxiliary member 50, the ring frame 30, and the like.
- the semiconductor wafer surface protecting film 10 is pasted over.
- the tape applying unit includes, for example, a roller 35; the roller 35 can roll over the circuit forming surface 20A of the semiconductor wafer 20, the ring-shaped auxiliary member 50, and the ring frame 30.
- the tape cutting mechanism cuts the semiconductor wafer protective film 10 in accordance with the outer diameter of the ring frame before or after the semiconductor wafer protective film 10 is attached to the premount frame.
- the tape cutting mechanism may be a cutter or the like (not shown). In this way, a mount frame including the semiconductor wafer 20, the ring-shaped auxiliary member 50, the ring frame 30, and the semiconductor wafer protective film 10 is obtained.
- the mount frame obtained in the mounting process is pressed with a pair of press plates (upper press plate 22-1 and lower press plate 22-2). It is a process (see FIG. 2C).
- FIG. 6 when the pressure applied by the upper heating plate 22-1 and the lower heating plate 22-2 is released after the pressing process, the outer peripheral portion of the semiconductor wafer surface protection film 10 of the mount frame becomes thinner than the central portion. There was a case. It is inferred that during the pressing process, the outer peripheral portion of the semiconductor wafer surface protective film 10 of the mount frame flows outward while the central portion hardly flows.
- the lower press plate 22-2 preferably has a convex portion 60 on the surface facing the upper press plate 22-1.
- the convex portion 60 provided on the lower press plate 22-2 enters the semiconductor wafer protective film 10 during pressing (FIG. 7A). Therefore, the thickness of the semiconductor wafer surface protective film 10 of the mount frame after the pressing process can be made uniform, and the raised portion (rim) 24 can be formed.
- the convex part 60 may be a cone (FIG. 7B) or a dome (FIG. 7C).
- the protrusion height of the protrusion 60 of the lower press plate 22-2 is preferably 1 to 100 ⁇ m; more preferably 15 to 100% of the thickness of the softened layer (B) of the semiconductor wafer surface protective film 10 It is preferable to be within the range.
- the protruding height of the convex portion 60 refers to the maximum height of the convex portion 60.
- Diameter CD of the projecting portion 60 of the lower press plate 22-2 is larger than the outer diameter DW of the semiconductor wafer mount frame is smaller than the inner diameter DA IN of the ring frame. That is, the relationship of DW ⁇ CD ⁇ DA IN is satisfied.
- the material of the convex portion 60 is not particularly limited. Any material suitable for grinding for processing into a convex shape may be used, and for example, ceramics such as alumina and cemented carbide such as tungsten carbide may be used.
- the pressing process can be performed using a semiconductor wafer pressing apparatus.
- the semiconductor wafer press apparatus includes an upper press plate 22-1 having a heating mechanism, and a lower press plate 22-2 having a convex portion 60 on a surface facing the upper press plate 22-1.
- the mount frame obtained in the mounting step is arranged between the upper press plate 22-1 and the lower press plate 22-2.
- the semiconductor wafer 20 of the mount frame is disposed so as to face the upper press plate 22-1 and the semiconductor wafer surface protecting film 10 of the mount frame is disposed to face the lower press plate 22-2.
- the mount frame to be arranged includes a structure (see FIG. 2B) of the semiconductor wafer 20, the ring frame 30, and the semiconductor wafer surface protecting film 10, as shown in FIG. 7A.
- the mount frame After placing the mount frame, the mount frame is heated by the heating mechanism of the upper press plate 22-1. Further, the mount frame sandwiched between the upper press plate 22-1 and the lower press plate 22-2 is pressed by the upper press plate 22-1 and the lower press plate 22-2.
- the mounting frame is peeled from the upper press plate 22-1 and the lower press plate 22-2, thereby forming a raised portion (rim) on the semiconductor wafer protective film and reducing the thickness of the semiconductor wafer protective film after the pressing step. It can be made uniform.
- Example 1 Preparation of material As a material of the base material layer (A), homopolypropylene (hPP) (manufactured by Prime Polymer Co., Ltd., density: 910 kg / m 3 ) was prepared. As a material for the softened layer (B), linear low density polyethylene (LLDPE) (manufactured by Prime Polymer Co., Ltd., density 918 kg / m 3 ) was prepared. The following adhesive layer coating solution was prepared as a material for the adhesive layer (C).
- hPP homopolypropylene
- LLDPE linear low density polyethylene
- the resulting solution was cooled, and further 100 parts by weight of xylene, 10 parts by weight of acrylic acid, and 0.3 parts by weight of tetradecyldimethylbenzylammonium chloride (Nippon Yushi Co., Ltd., cation M2-100). And reacted at 85 ° C. for 50 hours while blowing air. Thereby, the solution (adhesive main ingredient) of the acrylic adhesive polymer was obtained.
- Benzyldimethyl ketal [Nippon Ciba Geigy Co., Ltd.] as an intramolecular bond cleavage type photopolymerization initiator was added to the acrylic pressure-sensitive adhesive polymer solution (pressure-sensitive adhesive main component) with respect to 100 parts by weight of the acrylic pressure-sensitive adhesive polymer solid content.
- UV adhesive a mixture of dipentaerythritol hexaacrylate and dipentaerythritol monohydroxypentaacrylate as a monomer having a polymerizable carbon-carbon double bond in the molecule [manufactured by Toa Gosei Chemical Co., Ltd.] , Aronix M-400] and 0.35 parts by weight of an isocyanate-based cross-linking agent (Mitsui Toatsu Chemical Co., Ltd., Olester P49-75-S) as a thermal cross-linking agent ( 1 part by weight as a thermal crosslinking agent) was added to obtain a UV adhesive. It was 3N / 25mm when the adhesive force of the obtained UV adhesive was measured based on JISZ0237.
- isocyanate-based cross-linking agent Mitsubishi Chemical Co., Ltd., Olester P49-75-S
- the storage elastic modulus of these sample films was measured by the following method. That is, the sample film was set in a dynamic viscoelasticity measuring apparatus (manufactured by TA Instruments Inc .: ARES), and using a parallel plate type attachment having a diameter of 8 mm, the heating rate was increased from 30 ° C. to 3 ° C./min. The storage elastic modulus when the temperature was raised to 200 ° C. was measured. The measurement frequency was 1 Hz. After the measurement, for the sample films of the base material layer (A) and the softened layer (B), the obtained storage elastic modulus at 40 ° C., 100 ° C., and 150 ° C. from the storage elastic modulus-temperature curve of 10 to 200 ° C. Each value was read. For the sample film of the adhesive layer (C), the value of the storage elastic modulus at 25 ° C. was read from the obtained storage elastic modulus-temperature curve of 10 to 200 ° C.
- hPP Semiconductor Wafer Homopolypropylene
- B linear low density polyethylene
- B softening layer
- LLDPE linear low density polyethylene
- the aforementioned UV adhesive was applied and then dried to form an adhesive layer (C) to obtain a semiconductor wafer surface protecting film.
- the thickness of the base material layer (A) / softening layer (B) / adhesive layer (C) of the semiconductor wafer surface protecting film was 60 ⁇ m / 70 ⁇ m / 5 ⁇ m, and the total thickness was 135 ⁇ m.
- the semiconductor wafer surface protective film was peeled off from the semiconductor wafer, and the cross-sectional shape of the obtained semiconductor wafer surface protective film was observed with a microscope.
- the height of two raised portions (rims) in the cross section of the semiconductor wafer surface protecting film was measured, and the average value thereof was determined.
- the height of the raised portion (rim) was measured by measuring the height of the apex of the raised portion (rim) with respect to the surface of the semiconductor wafer surface protecting film that was in contact with the circuit forming surface of the semiconductor wafer. Evaluation of the formability of the raised portion (rim) was performed based on the following criteria. ⁇ : The height of the raised portion (rim) is 200 ⁇ m or more. ⁇ : The height of the raised portion (rim) is less than 200 ⁇ m.
- Backside Grindability A sapphire wafer that had been back-ground until the wafer thickness reached 90 ⁇ m was wet-ground until the wafer thickness reached 70 ⁇ m. And back surface grindability was evaluated based on the following criteria. ⁇ : Backside grinding is possible until the wafer thickness reaches 70 ⁇ m ⁇ : Substrate breaks before the wafer thickness reaches 70 ⁇ m (backside grinding is impossible)
- Example 2 A film for protecting a semiconductor wafer surface was prepared in the same manner as in Example 1 except that the thicknesses of the base layer (A) and the softened layer (B) were changed to 30 ⁇ m, and the same evaluation was performed.
- Example 3 A film for protecting the surface of a semiconductor wafer in the same manner as in Example 1 except that the material of the softening layer (B) is changed to an ethylene- ⁇ -olefin copolymer (Tuffmer (manufactured by Mitsui Chemicals), density: 893 kg / m 3 ). The same evaluation was performed.
- Example 4 The material of the softening layer (B) is changed to linear low density polyethylene (LLDPE) (Prime Polymer, density 938 kg / m 3 ), and the thickness of the base layer (A) and the softening layer (B) is changed.
- LLDPE linear low density polyethylene
- a semiconductor wafer surface protective film was prepared and evaluated in the same manner as in Example 1 except that the thickness was changed to 30 ⁇ m.
- Example 5 The material of the softening layer (B) was changed to random polypropylene (rPP) (manufactured by Prime Polymer Co., Ltd., density: 910 kg / m 3 ), and the thickness of the base layer (A) and the softening layer (B) was changed to 30 ⁇ m.
- rPP random polypropylene
- the material of the base material layer (A) is random polypropylene (rPP) (manufactured by Prime Polymer, density: 910 kg / m 3 ), and the material of the softening layer (B) is an ethylene- ⁇ -olefin copolymer (Tafmer (Mitsui Chemicals).
- rPP random polypropylene
- Tifmer ethylene- ⁇ -olefin copolymer
- a semiconductor wafer surface protective film was prepared in the same manner as in Example 1 except that the density was changed to 893 kg / m 3 ) and the same evaluation was performed.
- the material of the base layer (A) is linear low density polyethylene (LLDPE) (Prime Polymer, density 918 kg / m 3 ), and the material of the softening layer (B) is an ethylene- ⁇ -olefin copolymer (Tuffmer).
- LLDPE linear low density polyethylene
- Tuffmer ethylene- ⁇ -olefin copolymer
- a semiconductor wafer surface protective film was prepared in the same manner as in Example 1 except that the density was changed to (Mitsui Chemicals Co., Ltd.) and density: 893 kg / m 3 ), and the same evaluation was performed.
- the material of the base layer (A) is linear low density polyethylene (LLDPE) (Prime Polymer, density 918 kg / m 3 ), and the material of the softening layer (B) is an ethylene- ⁇ -olefin copolymer (Tuffmer).
- LLDPE linear low density polyethylene
- Tuffmer ethylene- ⁇ -olefin copolymer
- the material of the softening layer (B) is made of an ethylene- ⁇ -olefin copolymer (Tuffmer (manufactured by Mitsui Chemicals), density: 861 kg / m 3 ), and the thickness of the base material layer (A) and the softening layer (B).
- a semiconductor wafer surface protective film was prepared and evaluated in the same manner as in Example 1 except that the thickness was changed to 30 ⁇ m.
- Tables 1 to 3 show the storage elastic modulus of the sample films of Examples 1 to 5 and Comparative Examples 1 to 4 and the evaluation results of the semiconductor wafer surface protective film.
- the semiconductor wafer surface protection films of Examples 1 to 5 the storage modulus G B (40) is not less than 10MPa at 40 ° C. softening layer (B), heat press
- the raised portion (rim) can be satisfactorily formed and the wafer is not damaged even during back grinding. This is presumably because the raised portion (rim) does not melt even during back grinding, and the end portion of the wafer can be held stably.
- the semiconductor wafer surface protective films of Comparative Examples 3 and 4 in which the storage elastic modulus G B (40) at 40 ° C. of the softened layer (B) is less than 10 MPa can form a raised portion (rim) by hot pressing.
- the wafer is damaged during back grinding. This is thought to be because the raised portion (rim) is softened even during backside grinding, and the end portion of the wafer cannot be stably held.
- Example 3 the wafer was cracked during 70 ⁇ m grinding, whereas in Example 2, the wafer was not cracked even during 70 ⁇ m grinding.
- the softening layer (B) in the film for protecting a semiconductor wafer surface of Example 2 has a higher storage elastic modulus G B (40) at 40 ° C. than that for the film for protecting a semiconductor wafer surface of Example 3.
- G B storage elastic modulus
- Example 1 the wafer was cracked during the 70 ⁇ m grinding because the semiconductor wafer surface protective film was too thick with respect to the finished thickness of the wafer, and the deformation (deflection, bending) of the semiconductor wafer could not be suppressed. it is conceivable that.
- the ridges (rims) are not softened even at a high temperature near 100 ° C. during dry polishing (DP), and the end portions of the sapphire wafer can be stably held. I understand.
- Example 6 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim).
- the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer.
- a sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- the hot plate temperature was heated to 140 ° C., and the film for protecting the semiconductor wafer surface was pressed onto the sapphire wafer with a roller to obtain a laminate of the sapphire wafer and the film for protecting the semiconductor wafer surface.
- the roller pressure was 0.5 MPa, and the roller speed was 10 mm / second.
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressed at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 140 ° C.
- the temperature of the lower heating plate was 120 ° C.
- the average temperature TP of both was 130 ° C.
- the semiconductor wafer surface protecting film was peeled off from the sapphire wafer, and the cross-sectional shape of the obtained semiconductor wafer surface protecting film was observed with a microscope. The height of two raised portions (rims) in the cross section of the semiconductor wafer surface protecting film was measured, and the average value thereof was determined.
- Example 7 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressure-bonded at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 140 ° C.
- the temperature of the lower heating plate was 120 ° C.
- the average temperature TP of both was 130 ° C.
- Example 8 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressed at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 140 ° C.
- the temperature of the lower heating plate was 120 ° C.
- the average temperature TP of both was 130 ° C.
- Example 5 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressed at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 110 ° C.
- the temperature of the lower heating plate was 90 ° C., that is, the average temperature TP of both was 100 ° C.
- Example 6 the temperature TM in the mounting process is higher than the temperature TP in the pressing process; and the temperature TP is 14 ° C. higher than the softening point temperature (TmB) of the softening layer (B). Therefore, a rim having a sufficient height was formed, and there was no generation of wrinkles and no peeling between the sapphire substrate and the protective film.
- Example 7 the temperature TM in the mounting process is 30 ° C. lower than the temperature TP in the pressing process. Therefore, although a rim having a sufficient height could be formed, generation of wrinkles was confirmed. Furthermore, in Example 8, the temperature TM in the mounting process is 105 ° C. lower than the temperature TP in the pressing process. Therefore, although a rim having a sufficient height could be formed, a rim having a sufficient height could be formed, but generation of wrinkles was confirmed, and peeling between the sapphire substrate and the protective film was also confirmed.
- the temperature TP in the pressing step is lower than the softening point temperature (TmB) of the softening layer (B). Therefore, a sufficient rim could not be formed.
- Example 9 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressed at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 140 ° C.
- the temperature of the lower heating plate was 100 ° C., that is, the average temperature of both was 120 ° C.
- Example 10 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- FIG. 2C it was obtained with an upper hot plate (a hot plate placed on the semiconductor wafer surface protecting film) and a lower hot plate (a hot plate placed on the sapphire wafer side) as shown in FIG.
- the laminate was sandwiched and pressed at 10 MPa for 180 seconds.
- the temperature of the upper heating plate was 140 ° C.
- the temperature of the lower heating plate was 140 ° C., that is, the average of both was 140 ° C.
- Example 9 the temperature TM in the mounting step is higher than the temperature TP in the pressing step; and the temperature TP is 4 ° C. higher than the softening point temperature (TmB) of the softening layer (B). Furthermore, the upper hot plate temperature TP1 in the pressing step is higher than the lower hot plate temperature TP2. Therefore, a rim having a sufficient height was formed.
- Example 10 the temperature TM in the mounting process is the same temperature as the temperature TP in the pressing process; and the upper hot plate temperature TP1 in the pressing process is the same temperature as the lower hot plate temperature TP2. Therefore, the rim was slightly flattened, and the height of the rim was lowered as compared with Example 7.
- Example 11 to 14 A film similar to the film used in Example 2 was attached to a sapphire wafer (mounting process) and thermocompression bonded (pressing process) to form a raised portion (rim). Specifically, the semiconductor wafer surface protective film was cut into a size larger than that of the sapphire wafer. A sapphire wafer having a thickness of 650 ⁇ m and a size of 4 inches was prepared. As shown to FIG. 2A, it has arrange
- an upper heat plate (a heat plate disposed on the semiconductor wafer surface protecting film) of the heat press machine and a lower heat plate having a conical convex portion as shown in FIG. 7B The obtained laminate was sandwiched with a hot plate disposed on the sapphire wafer side and pressed at 10 MPa for 180 seconds. At this time, the temperature of the upper heating plate was 140 ° C., and the temperature of the lower heating plate was 120 ° C.
- Example 11 the height of the convex portion is 0 ⁇ m (no convex portion), in Example 12, the height of the convex portion is 5 ⁇ m, in Example 13, the height of the convex portion is 15 ⁇ m, and in Example 14, the convex portion is The height was set to 25 ⁇ m.
- variation difference of the maximum thickness and the minimum thickness of the film for semiconductor wafer surface protections after a press process was measured, and the height of the protruding part (rim
- the film for protecting the surface of a semiconductor wafer of the present invention can enable backside grinding without damaging even a hard and brittle semiconductor wafer such as a sapphire substrate.
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Abstract
Description
[1]150℃における貯蔵弾性率GA(150)が1MPa以上である基材層(A)と、120~180℃のいずれかの温度における貯蔵弾性率GB(120~180)が0.05MPa以下であり、かつ40℃における貯蔵弾性率GB(40)が10MPa以上である軟化層(B)と、を含む、半導体ウエハ表面保護用フィルム。
[2]前記軟化層(B)の100℃における貯蔵弾性率GB(100)が、1MPa以上である、[1]に記載の半導体ウエハ表面保護用フィルム。
[3]前記軟化層(B)の60℃における引張弾性率EB(60)と25℃における引張弾性率EB(25)とが、1>EB(60)/EB(25)>0.1の関係を満たす、[1]または[2]に記載の半導体ウエハ表面保護用フィルム。
[4]前記軟化層(B)を介して前記基材層(A)とは反対側に配置された粘着層(C)をさらに含み、前記粘着層(C)の、JIS Z0237に準拠して測定される粘着力が0.1~10N/25mmである、[1]~[3]のいずれかに記載の半導体ウエハ表面保護用フィルム。
[5]前記基材層(A)は、最表面に配置されている、[1]~[4]のいずれかに記載の半導体ウエハ表面保護用フィルム。
[6]前記粘着層(C)は、前記軟化層(B)を介して前記基材層(A)とは反対側の最表面に配置されている、[4]または[5]に記載の半導体ウエハ表面保護用フィルム。
[7]前記軟化層(B)は、炭化水素オレフィンの単独重合体、炭化水素オレフィンの共重合体、またはそれらの混合物を含む、[1]~[6]のいずれかに記載の半導体ウエハ表面保護用フィルム。
[8]前記軟化層(B)を構成する樹脂の密度が880~960kg/m3である、[1]~[7]のいずれかに記載の半導体ウエハ表面保護用フィルム。
[9]前記基材層(A)が、ポリオレフィン層、ポリエステル層、またはポリオレフィン層とポリエステル層の積層体である、[1]~[8]のいずれかに記載の半導体ウエハ表面保護用フィルム。
[10]半導体ウエハを、半導体ウエハ表面保護用フィルム上に、前記半導体ウエハの回路形成面が半導体ウエハ表面保護用フィルムと接するように配置する工程と、
前記半導体ウエハの外周に、前記半導体ウエハを保持する前記半導体ウエハ表面保護用フィルムの***部を形成する工程と、
前記***部によって保持された前記半導体ウエハの回路非形成面を研削する工程と、
前記半導体ウエハの回路形成面から前記半導体ウエハ表面保護用フィルムを剥離する工程と、を含み、
前記***部の100℃における貯蔵弾性率G(100)が1MPa以上である、半導体装置の製造方法。
[11]前記半導体ウエハ表面保護用フィルムが、[1]~[9]のいずれかに記載の半導体ウエハ表面保護用フィルムであって、
前記***部を、前記半導体ウエハ表面保護用フィルムと前記半導体ウエハとを120~180℃の温度、1~10MPaの圧力で熱圧着させて形成する、[10]に記載の半導体装置の製造方法。
[12]前記[11]に記載の半導体装置の製造方法であって、
前記半導体ウエハを、前記半導体ウエハ表面保護用フィルム上に、前記半導体ウエハの回路形成面が半導体ウエハ表面保護用フィルムと接するように配置する工程におけるフィルムの温度TMと、前記半導体ウエハ表面保護用フィルムの***部を形成する工程における熱圧着温度TPと、前記軟化層(B)の軟化点温度TmBとが、以下の一般式の関係を満たす、半導体装置の製造方法。[式1] TP≦TM[式2] TmB<TP<TmB+40℃
[13]前記半導体ウエハ表面保護用フィルムの軟化層(B)が、基材層(A)よりも前記半導体ウエハの回路形成面側になるように、前記半導体ウエハを前記半導体ウエハ表面保護用フィルム上に配置する、[11]または[12]に記載の半導体装置の製造方法。
[14]前記半導体ウエハは、モース硬度8以上の高硬度材料基板を含む、[10]~[13]のいずれかに記載の半導体装置の製造方法。
[15]半導体ウエハと、前記半導体ウエハを囲む枠を有するリングフレームAと、前記半導体ウエハの回路形成面と前記フレームAとにわたって貼り付けられた請求項1に記載の半導体ウエハ表面保護フィルムと、を備えたマウントフレームを、加熱機構を備えた上プレス板と、上プレス板と対向する下プレス板とで挟み込んでプレスする半導体ウエハプレス装置であって、
前記半導体ウエハの外直径DWと、前記リングフレームAの内直径DAINとが、式(1)DW<DAIN の関係を満たし、
前記下プレス板は、前記上プレス板と対向する面に凸部を備え、
前記プレスしたときの、前記凸部の前記マウントフレームとの接触面の外周は、円状である、半導体ウエハプレス装置。
[16]前記凸部の高さが1~100μmである、[15]に記載の半導体ウエハプレス装置。
[17]前記凸部の高さが、半導体ウエハ表面保護フィルムの軟化層(B)の厚みに対して15~100%の範囲内にある、[15]または[16]に記載の半導体ウエハプレス装置。
[18]前記凸部の直径CDが、DW<CD<DAINの関係を満たす、[15]~[17]のいずれかに記載の半導体ウエハプレス装置。
[19]半導体ウエハと、前記半導体ウエハを囲むリング状補助部材Bと、前記半導体ウエハと前記リング状補助部材Bとを囲むリングフレームAと、前記半導体ウエハの回路形成面と前記リング状補助部材Bと前記リングフレームAにわたって貼り付けられた[1]~[9]のいずれかに記載の半導体ウエハ表面保護フィルムと、を含むマウントフレームを作製する半導体ウエハマウント装置であって、
前記半導体ウエハの外直径DWと、前記リングフレームAの内直径DAINと、前記リング状補助部材Bのリング外直径DBOUTと、前記リング状補助部材Bのリング内直径DBINとが、式(1) DW<DBIN<DBOUT<DAIN の関係を満たし、
前記半導体ウエハの回路形成面の反対面を加熱する加熱ユニットと、
前記半導体ウエハの回路形成面と、前記リングフレームAと、前記リング状補助部材Bとにわたって転動して、前記半導体ウエハ表面保護フィルムを貼り付けるための貼付ローラと、
前記リングフレームAの外形状に沿って、前記表面保護フィルムを切断するテープ切断機構と、を備える、半導体ウエハマウント装置。
[20]下記式で表されるΔD1とΔD2のいずれもが、DWの1%以内である、[19]に記載の半導体ウエハマウント装置。
ΔD1=DBIN-DW・・・(2)
ΔD2=DAIN-DBOUT・・・(3)
1')半導体ウエハを用意する工程と、2')半導体ウエハの外周に実質的に樹脂からなる***部を形成する工程と、3')半導体ウエハ表面保護用フィルム上に半導体ウエハの回路形成面を配置する工程と、4')***部によって保持された半導体ウエハの回路非形成面を研削する工程と、5')半導体ウエハ表面保護用フィルムを剥離する工程とを含む、半導体装置の製造方法であって、
前記樹脂からなる***部の貯蔵弾性率GB(40)が10MPa以上である、半導体装置の製造方法。
本発明の半導体ウエハ表面保護用フィルムは、基材層(A)と、軟化層(B)とを含み;必要に応じて、粘着層(C)(図1A参照)や軽粘着層(D)(図1B参照)などをさらに含んでもよい。本発明でいうフィルムの厚さは限定されず、いわゆるシートとも称されうる。
基材層(A)は、半導体ウエハ表面保護用フィルムと半導体ウエハとを熱圧着したときの、半導体ウエハの反りを抑制し、形状を保持する機能を有する。そのため、基材層(A)は、熱圧着温度(約120~180℃のいずれかの温度)において一定以上の貯蔵弾性率を有することが好ましい。具体的には、基材層(A)の150℃における貯蔵弾性率GA(150)が、1MPa以上であることが好ましく、2MPa以上であることがより好ましい。
軟化層(B)は、半導体ウエハの端部を安定に保持するために、半導体ウエハの周囲に***部(リム)を形成する機能を有する。後述するように、半導体ウエハ表面保護用フィルムと半導体ウエハとを熱圧着させて***部(リム)を形成する場合があるため、熱圧着温度(120~180℃)で軟化層(B)を軟化させる必要がある。つまり、軟化層(B)の軟化点温度TmBは、熱圧着温度(120~180℃)より低温であることが好ましい。軟化点温度TmBは、DSC測定から求めることができ、具体的には、ISO-11357-3による樹脂材料の融点(DSC法)を軟化点温度とする。
本発明の半導体ウエハ表面保護用フィルムは、半導体ウエハとの密着性を高めるために、粘着層(C)をさらに含むことが好ましい。一方で、粘着層(C)の粘着力が高すぎると、半導体ウエハから剥離する際に、糊残りしやすい。そのため、粘着層(C)は、最低限の粘着力を有していればよく、具体的には、JIS Z0237に準拠して測定される粘着力が0.1~10N/25mmであることが好ましい。
本発明の半導体ウエハ表面保護用フィルムは、基材層(A)と軟化層(B)とを互いに剥離可能に接着させるための軽粘着層(D)を有していてもよい。軽粘着層(D)の材質の例には、アクリル系粘着剤などが含まれる。
本発明の半導体ウエハ表面保護用フィルムを用いた半導体装置の製造方法の一例は、1)半導体ウエハ表面保護用フィルム上に半導体ウエハを配置する工程(マウンタ工程)と、2)半導体ウエハの外周に、半導体ウエハを保持する半導体ウエハ表面保護用フィルムの***部を形成する工程(プレス工程)と、3)***部によって保持された半導体ウエハの回路非形成面を研削する工程と、4)半導体ウエハ表面保護用フィルムを剥離する工程とを含む。本発明における3)半導体ウエハ表面保護用フィルムによって保持された半導体ウエハの回路非形成面を研削する工程とは、半導体ウエハを割ったり、破損したりすることなく、所定の厚みまで薄化加工することを意味する。これらの工程を行った後、半導体ウエハをダイシングしてチップ化する工程などをさらに行ってもよい。
方法1)図8Aに示されるように、半導体ウエハ20の周囲に、ディスペンサー100などの塗布装置で、液状接着剤105を塗布して硬化させる方法
方法2)図8Bに示されるように、半導体ウエハ20を、半導ウエハ20の径とほぼ同じ径の貫通孔を有する樹脂製リング110に挿入する方法
方法3)図8Cに示されるように、半導体ウエハ20を挿入した金型120のキャビティ125に、溶融樹脂を注入して、冷却固化して半導体ウエハの周囲に樹脂成形する方法
半導体ウエハ表面保護用フィルム上に半導体ウエハを配置する例が、図2Aに示される。まず、半導体ウエハ20よりも大きいサイズに切り出した半導体ウエハ表面保護用フィルム10を準備する。次いで、半導体ウエハ20を、半導体ウエハ表面保護用フィルム10上に配置する(1)の工程)。このとき、半導体ウエハ20の回路形成面20Aが、半導体ウエハ表面保護用フィルム10の粘着層(C)16と接するようにする。
次いで、図2Cに示されるように、半導体ウエハ20と半導体ウエハ表面保護用フィルム10とを、熱プレス機の一対の熱板(上熱板22-1と下熱板22-2)にて熱圧着する((2)の工程)。それにより、半導体ウエハ20を、溶融した軟化層(B)14に押し込み、それにより押し出された軟化層(B)14が、半導体ウエハ20の端部近傍に***部(リム)24を形成する。上熱板22-1とは、半導体ウエハ20の側に配置される熱板であり;下熱板22-2とは、半導体ウエハ保護フィルム10の側に配置される熱板である。上熱板22-1と半導体ウエハ20とは、直接接触してもよいし、何らかの部材(例えば治具など)を介していてもよい。同様に、下熱板22-2と半導体ウエハ保護フィルム10とは、直接接触してもよいし、何らかの部材(例えば治具など)を介していてもよい。
前述のように、マウント工程では、枠を有するリングフレーム30の内部に半導体ウエハ20を配置し;半導体ウエハ20の一方の面(通常は回路が形成されている面20A)と、リングフレーム30とにわたって、半導体ウエハ表面保護用フィルム10を貼り付ける(図2A参照)。このとき、リングフレーム30と、リングフレーム30の内部に配置される半導体ウエハ20との隙間が大きいと、半導体ウエハ20とリングフレーム30との間で半導体ウエハ保護用フィルムが弛むことがある。そのため、リングフレーム30と半導体ウエハ20との間に、リング状補助部材50を配置することが好ましい(図5AおよびB参照)。
ΔD1=DBIN-DW・・・(2)
ΔD2=DAIN-DBOUT・・・(3)
前述のように、プレス工程は、マウント工程で得られたマウントフレームを、一対のプレス板(上プレス板22-1と下プレス板22-2)とでプレスする工程である(図2C参照)。ところが図6に示すように、プレス工程後に上熱板22-1と下熱板22-2による圧力を解除すると、マウントフレームの半導体ウエハ表面保護フィルム10の外周部が、中央部よりも薄くなってしまうことがあった。プレス工程中に、マウントフレームの半導体ウエハ表面保護フィルム10の外周部は、外側に流動するのに対して、中央部は流動しにくいためであると推察される。
材料の準備
基材層(A)の材料として、ホモポリプロピレン(hPP)(プライムポリマー社製、密度:910kg/m3)を準備した。軟化層(B)の材料として、直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度918kg/m3)を準備した。粘着層(C)の材料として、以下の粘着層用塗布液を調製した。
アクリル酸エチル30重量部、アクリル酸2-エチルヘキシル40重量部、アクリル酸メチル10重量部、およびメタクリル酸グリシジル20重量部のモノマー混合物を、ベンゾイルパーオキサイド系重合開始剤〔日本油脂(株)製、ナイパーBMT-K40〕0.8重量部(開始剤として0.32重量部)を用いて、トルエン65重量部、酢酸エチル50重量部中にて80℃で10時間反応させた。反応終了後、得られた溶液を冷却し、さらにキシレン100重量部と、アクリル酸10重量部と、テトラデシルジメチルベンジルアンモニウムクロライド〔日本油脂(株)製、カチオンM2-100〕0.3重量部とを加えて、空気を吹き込みながら85℃で50時間反応させた。これにより、アクリル系粘着剤ポリマーの溶液(粘着剤主剤)を得た。
基材層(A)となるホモポリプロピレン(hPP)(プライムポリマー社製、密度:910kg/m3)を押出成形して、厚み500μmのサンプルフィルムを作製した。同様に、軟化層(B)となる直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度918kg/m3)を押出成形し、厚み500μmのサンプルフィルムを作製した。粘着層(C)となる前述のUV粘着剤を、ガラス基板上に塗布および乾燥させた後、剥離して、厚み300μmのサンプルフィルムを作製した。
基材層(A)となるホモポリプロピレン(hPP)(プライムポリマー社製、密度:910kg/m3)と、軟化層(B)となる直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度918kg/m3)とを共押出して、2層の共押出フィルムを得た。得られた共押出フィルムの軟化層(B)上に、前述のUV粘着剤を塗布した後、乾燥させて粘着層(C)を形成し、半導体ウエハ表面保護用フィルムを得た。半導体ウエハ表面保護用フィルムの基材層(A)/軟化層(B)/粘着層(C)の厚みは、60μm/70μm/5μmであり、合計厚みは135μmであった。
得られた半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。次いで、厚み650μm、4インチサイズのサファイアウエハを、半導体ウエハ表面保護用フィルム上に配置した。このとき、サファイアウエハの回路形成面が、半導体ウエハ表面保護用フィルムの粘着層(C)と接するようにした。これらを熱プレス機にセットして、140℃、10MPaの圧力で2分間熱圧着させた。
○:***部(リム)の高さが200μm以上
×:***部(リム)の高さが200μm未満
前述と同様に、得られた半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。次いで、厚み650μm、4インチサイズのサファイアウエハを、半導体ウエハ表面保護用フィルム上に配置した。これらを熱プレス機にセットして、140℃、10MPaの圧力で2分間熱圧着させた。
サファイアウエハが熱圧着された半導体ウエハ表面保護用フィルムを、ディスコDGP8761のチャックテーブル上にセットし、サファイアウエハの回路非形成面(裏面)を、ウエハ厚みが90μmとなるまで湿式で研削した。研削時のウエハの温度は約40℃であった。そして、裏面研削性を以下の基準に基づいて評価した。
○:ウエハの厚みが90μmとなるまで裏面研削が可能
×:ウエハの厚みが90μmとなる前に基板が割れる(裏面研削が不可能)
ウエハの厚みが90μmとなるまで裏面研削したサファイアウエハを、さらにウエハ厚みが70μmとなるまで湿式で研削した。そして、裏面研削性を、以下の基準に基づいて評価した。
○:ウエハの厚みが70μmとなるまで裏面研削が可能
×:ウエハの厚みが70μmとなる前に基板が割れる(裏面研削が不可能)
前記3)の湿式での裏面研削終了後のサンプルについて、さらに5分間、乾式で研削加工(ドライポリッシング)を行った。ドライポリッシング時のウエハの温度は約100℃であった。そして、半導体ウエハ表面保護用フィルムに紫外線を約1000mJ照射した後、半導体ウエハ表面保護用フィルムからサファイアウエハを剥がした。得られた半導体ウエハ表面保護用フィルムの断面形状を、マイクロスコープで観察し、***部(リム)の高さを測定した。DP耐熱性の評価は、以下の基準に基づいて行った。
○:***部(リム)の高さがウエハの研削後の厚み程度ある(リムが溶融せずに残っている)
×:***部(リム)の高さがウエハの研削厚みよりも低い(リムが溶融して消失している)
前記4)のDP(ドライポリッシング)後の基材層(A)の表面平滑性を、触針式表面形状測定機(Veeco社 Dektac3)により評価した。表面平滑性の評価は、以下の基準に基づいて行った。
○:チャックテーブルの表面形状の転写による基材層(A)表面の凸凹のRaが1μm未満である
×:チャックテーブルの表面形状の転写による基材層(A)表面の凸凹のRaが1μm以上である
基材層(A)と軟化層(B)の厚みをそれぞれ30μmに変更した以外は実施例1と同様にして半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
軟化層(B)の材料をエチレン-α-オレフィン共重合体(タフマー(三井化学社製)、密度:893kg/m3)に変更した以外は実施例1と同様にして半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
軟化層(B)の材料を、直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度938kg/m3)に変更し、基材層(A)と軟化層(B)の厚みをそれぞれ30μmに変更した以外は、実施例1と同様にして、半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
軟化層(B)の材料を、ランダムポリプロピレン(rPP)(プライムポリマー社製、密度:910kg/m3)に変更し、基材層(A)と軟化層(B)の厚みをそれぞれ30μmに変更した以外は、実施例1と同様にして、半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
基材層(A)の材料をランダムポリプロピレン(rPP)(プライムポリマー社製、密度:910kg/m3)に、軟化層(B)の材料をエチレン-α-オレフィン共重合体(タフマー(三井化学社製)、密度:893kg/m3)にそれぞれ変更した以外は実施例1と同様にして半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
基材層(A)の材料を直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度918kg/m3)に、軟化層(B)の材料をエチレン-α-オレフィン共重合体(タフマー(三井化学社製)、密度:893kg/m3)にそれぞれ変更した以外は実施例1と同様にして半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
基材層(A)の材料を直鎖状低密度ポリエチレン(LLDPE)(プライムポリマー社製、密度918kg/m3)に、軟化層(B)の材料をエチレン-α-オレフィン共重合体(タフマー(三井化学社製)、密度:861kg/m3)にそれぞれ変更した以外は実施例1と同様にして半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
軟化層(B)の材料を、エチレン-α-オレフィン共重合体(タフマー(三井化学社製)、密度:861kg/m3)に、基材層(A)と軟化層(B)の厚みをそれぞれ30μmに変更した以外は、実施例1と同様にして、半導体ウエハ表面保護用フィルムを作製し、同様の評価を行った。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。
プレス工程後に、リングフレームに半導体ウエハ表面保護用フィルムを貼り付けた状態で、サファイアウエハ中央に150gの錘をのせて、フィルムの沈み込み量を測定した。2mm以上沈み込んだものを、張力がないものとして×と評価した。
プレス工程後に、目視にて、サファイアウエハの周囲の半導体ウエハ表面保護用フィルムに、放射状のシワが10本以上発生したものを×とした。
プレス工程後、サファイアウエハに半導体ウエハ表面保護用フィルムを貼り付けたまま室温にて48時間放置した。その後に、ウエハ表面保護用フィルムとサファイアウエハ端部とに1mm以上の剥離が見られたものを×とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を100℃に加熱して、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を25℃として、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を100℃として、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を140℃に加熱して、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を140℃に加熱して、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
実施例2で用いたフィルムと同様のフィルムを、サファイアウエハに貼り付けて(マウント工程)、熱圧着(プレス工程)することで***部(リム)を形成した。具体的には、半導体ウエハ表面保護用フィルムを、サファイアウエハよりも大きいサイズに切り出した。また、厚み650μm、4インチサイズのサファイアウエハを用意した。図2Aに示すように、半導体ウエハ表面保護用フィルム上に配置した。ホットプレート温度を140℃に加熱して、ローラで半導体ウエハ表面保護用フィルムをサファイアウエハに圧着させて、サファイアウエハと半導体ウエハ表面保護用フィルムとの積層物を得た。ローラ圧力は0.5MPa,ローラ速度は10mm/秒とした。
2 ワックス樹脂層
3 砥石
4 従来の半導体ウエハ保護フィルム
10 半導体ウェハ表面保護用フィルム
12 基材層(A)
14 軟化層(B)
16 粘着層(C)
18 軽粘着層(D)
20 半導体ウエハ
20A 半導体ウエハの回路形成面
20B 半導体ウエハの回路非形成面(裏面)
22-1 上熱板
22-2 下熱板
24 ***部(リム)
26 チャックテーブル
28 砥石
Claims (20)
- 150℃における貯蔵弾性率GA(150)が1MPa以上である基材層(A)と、
120~180℃のいずれかの温度における貯蔵弾性率GB(120~180)が0.05MPa以下であり、かつ40℃における貯蔵弾性率GB(40)が10MPa以上である軟化層(B)と、を含む、半導体ウエハ表面保護用フィルム。 - 前記軟化層(B)の100℃における貯蔵弾性率GB(100)が、1MPa以上である、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 前記軟化層(B)の60℃における引張弾性率EB(60)と25℃における引張弾性率EB(25)とが、1>EB(60)/EB(25)>0.1の関係を満たす、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 前記軟化層(B)を介して前記基材層(A)とは反対側に配置された粘着層(C)をさらに含み、
前記粘着層(C)の、JIS Z0237に準拠して測定される粘着力が0.1~10N/25mmである、請求項1に記載の半導体ウエハ表面保護用フィルム。 - 前記基材層(A)は、最表面に配置されている、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 前記粘着層(C)は、前記軟化層(B)を介して前記基材層(A)とは反対側の最表面に配置されている、請求項4に記載の半導体ウエハ表面保護用フィルム。
- 前記軟化層(B)は、炭化水素オレフィンの単独重合体、炭化水素オレフィンの共重合体、またはそれらの混合物を含む、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 前記軟化層(B)を構成する樹脂の密度が880~960kg/m3である、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 前記基材層(A)が、ポリオレフィン層、ポリエステル層、またはポリオレフィン層とポリエステル層の積層体である、請求項1に記載の半導体ウエハ表面保護用フィルム。
- 半導体ウエハを、半導体ウエハ表面保護用フィルム上に、前記半導体ウエハの回路形成面が半導体ウエハ表面保護用フィルムと接するように配置する工程と、
前記半導体ウエハの外周に、前記半導体ウエハを保持する前記半導体ウエハ表面保護用フィルムの***部を形成する工程と、
前記***部によって保持された前記半導体ウエハの回路非形成面を研削する工程と、
前記半導体ウエハの回路形成面から前記半導体ウエハ表面保護用フィルムを剥離する工程と、を含み、
前記***部の100℃における貯蔵弾性率G(100)が1MPa以上である、半導体装置の製造方法。 - 前記半導体ウエハ表面保護用フィルムが、請求項1に記載の半導体ウエハ表面保護用フィルムであって、
前記***部を、前記半導体ウエハ表面保護用フィルムと前記半導体ウエハとを120~180℃の温度、1~10MPaの圧力で熱圧着させて形成する、請求項10に記載の半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法であって、
前記半導体ウエハを、前記半導体ウエハ表面保護用フィルム上に、前記半導体ウエハの回路形成面が半導体ウエハ表面保護用フィルムと接するように配置する工程におけるフィルムの温度TMと、前記半導体ウエハ表面保護用フィルムの***部を形成する工程における熱圧着温度TPと、前記軟化層(B)の軟化点温度TmBとが、以下の一般式の関係を満たす、半導体装置の製造方法。
[式1] TP≦TM
[式2] TmB<TP<TmB+40℃ - 前記半導体ウエハ表面保護用フィルムの軟化層(B)が、基材層(A)よりも前記半導体ウエハの回路形成面側になるように、前記半導体ウエハを前記半導体ウエハ表面保護用フィルム上に配置する、請求項11に記載の半導体装置の製造方法。
- 前記半導体ウエハは、モース硬度8以上の高硬度材料基板を含む、請求項10に記載の半導体装置の製造方法。
- 半導体ウエハと、前記半導体ウエハを囲む枠を有するリングフレームAと、前記半導体ウエハの回路形成面と前記フレームAとにわたって貼り付けられた請求項1に記載の半導体ウエハ表面保護フィルムと、を備えたマウントフレームを、加熱機構を備えた上プレス板と、上プレス板と対向する下プレス板とで挟み込んでプレスする半導体ウエハプレス装置であって、
前記半導体ウエハの外直径DWと、前記リングフレームAの内直径DAINとが、式(1)DW<DAIN の関係を満たし、
前記下プレス板は、前記上プレス板と対向する面に凸部を備え、
前記プレスしたときの、前記凸部の前記マウントフレームとの接触面の外周は、円状である、半導体ウエハプレス装置。 - 前記凸部の高さが1~100μmである、請求項15に記載の半導体ウエハプレス装置。
- 前記凸部の高さが、半導体ウエハ表面保護フィルムの軟化層(B)の厚みに対して15~100%の範囲内にある、請求項15に記載の半導体ウエハプレス装置。
- 前記凸部の直径CDが、DW<CD<DAINの関係を満たす、請求項15に記載の半導体ウエハプレス装置。
- 半導体ウエハと、前記半導体ウエハを囲むリング状補助部材Bと、前記半導体ウエハと前記リング状補助部材Bとを囲むリングフレームAと、前記半導体ウエハの回路形成面と前記リング状補助部材Bと前記リングフレームAにわたって貼り付けられた請求項1に記載の半導体ウエハ表面保護フィルムと、を含むマウントフレームを作製する半導体ウエハマウント装置であって、
前記半導体ウエハの外直径DWと、前記リングフレームAの内直径DAINと、前記リング状補助部材Bのリング外直径DBOUTと、前記リング状補助部材Bのリング内直径DBINとが、式(1) DW<DBIN<DBOUT<DAIN の関係を満たし、
前記半導体ウエハの回路形成面の反対面を加熱する加熱ユニットと、
前記半導体ウエハの回路形成面と、前記リングフレームAと、前記リング状補助部材Bとにわたって転動して、前記半導体ウエハ表面保護フィルムを貼り付けるための貼付ローラと、
前記リングフレームAの外形状に沿って、前記表面保護フィルムを切断するテープ切断機構と、を備える、半導体ウエハマウント装置。 - 下記式で表されるΔD1とΔD2のいずれもが、DWの1%以内である、請求項19に記載の半導体ウエハマウント装置。
ΔD1=DBIN-DW・・・(2)
ΔD2=DAIN-DBOUT・・・(3)
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Also Published As
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KR20130084695A (ko) | 2013-07-25 |
CN103748664B (zh) | 2016-04-20 |
SG189515A1 (en) | 2013-05-31 |
CN103748664A (zh) | 2014-04-23 |
TWI544533B (zh) | 2016-08-01 |
KR101467718B1 (ko) | 2014-12-01 |
JP5393902B2 (ja) | 2014-01-22 |
JPWO2013021644A1 (ja) | 2015-03-05 |
TW201316393A (zh) | 2013-04-16 |
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