JP7154686B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP7154686B2 JP7154686B2 JP2018108417A JP2018108417A JP7154686B2 JP 7154686 B2 JP7154686 B2 JP 7154686B2 JP 2018108417 A JP2018108417 A JP 2018108417A JP 2018108417 A JP2018108417 A JP 2018108417A JP 7154686 B2 JP7154686 B2 JP 7154686B2
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- JP
- Japan
- Prior art keywords
- wafer
- polyolefin
- sheet
- based sheet
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims description 12
- 229920000098 polyolefin Polymers 0.000 claims description 138
- 238000005520 cutting process Methods 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 37
- 230000010354 integration Effects 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 19
- -1 polyethylene Polymers 0.000 claims description 14
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 239000004743 Polypropylene Substances 0.000 claims description 7
- 239000004793 Polystyrene Substances 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 229920001155 polypropylene Polymers 0.000 claims description 7
- 229920002223 polystyrene Polymers 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 15
- 239000003292 glue Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000002173 cutting fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006124 polyolefin elastomer Polymers 0.000 description 1
- 229920005606 polypropylene copolymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J123/06—Polyethene
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- C09J123/12—Polypropene
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Dicing (AREA)
Description
1a 表面
1b 裏面
3 分割予定ライン
3a 切削痕
5 デバイス
7 フレーム
7a 開口
9 ポリオレフィン系シート
9a 切断痕
11 フレームユニット
2 チャックテーブル
2a 保持面
2b,40a 吸引源
2c,40b 切り替え部
4 ヒートガン
4a 熱風
6 ヒートローラー
8 赤外線ランプ
8a 赤外線
10 カッター
12 切削装置
14 切削ユニット
16 スピンドルハウジング
18 切削ブレード
20 切削水供給ノズル
22 ピックアップ装置
24 ドラム
26 フレーム保持ユニット
28 クランプ
30 フレーム支持台
32 ロッド
34 エアシリンダ
36 ベース
38 突き上げ機構
38a エアー
40 コレット
Claims (9)
- 複数のデバイスが、分割予定ラインによって区画された表面の各領域に形成されたウェーハを個々のデバイスチップに分割するウェーハの加工方法であって、
ウェーハを収容する開口を有するフレームの該開口内にウェーハを位置付け、該ウェーハの裏面と該フレームの外周とに糊層を備えないポリオレフィン系シートを配設するポリオレフィン系シート配設工程と、
該ポリオレフィン系シートを加熱し熱圧着により該ウェーハと該フレームとを該ポリオレフィン系シートを介して一体化する一体化工程と、
切削ブレードを回転可能に備えた切削装置を用いて該ウェーハを分割予定ラインに沿って切削して該ウェーハを個々のデバイスチップに分割する分割工程と、
該ポリオレフィン系シート側からエアーを吹き付けることにより個々にデバイスチップを突き上げ、該ポリオレフィン系シートから該デバイスチップをピックアップするピックアップ工程と、
を備えることを特徴とするウェーハの加工方法。 - 該一体化工程において、赤外線の照射によって該熱圧着を実施することを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、一体化を実施した後、該フレームの外周からはみ出したポリオレフィン系シートを除去することを特徴とする請求項1記載のウェーハの加工方法。
- 該ピックアップ工程では、該ポリオレフィン系シートを拡張して各デバイスチップ間の間隔を広げることを特徴とする請求項1記載のウェーハの加工方法。
- 該ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかであることを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、該ポリオレフィン系シートが該ポリエチレンシートである場合に加熱温度は120℃~140℃であり、該ポリオレフィン系シートが該ポリプロピレンシートである場合に加熱温度は160℃~180℃であり、該ポリオレフィン系シートが該ポリスチレンシートである場合に加熱温度は220℃~240℃であることを特徴とする請求項5記載のウェーハの加工方法。
- 該ウェーハは、Si、GaN、GaAs、ガラスのいずれかで構成されることを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、該ポリオレフィン系シートに熱風を当てて該ポリオレフィン系シートを加熱して該熱圧着を実施することを特徴とする請求項1記載のウェーハの加工方法。
- 該一体化工程において、該ポリオレフィン系シートをローラーで押圧して該熱圧着を実施することを特徴とする請求項1記載のウェーハの加工方法。
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US16/419,126 US11127633B2 (en) | 2018-06-06 | 2019-05-22 | Wafer processing method including a thermocompression bonding step of bonding a wafer to a ring frame via a polyolefin sheet |
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JP2019220550A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
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JP7430515B2 (ja) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | ウエーハの処理方法 |
JP7408237B2 (ja) * | 2020-01-16 | 2024-01-05 | 株式会社ディスコ | ウェーハの加工方法 |
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