JP2021030336A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2021030336A JP2021030336A JP2019151169A JP2019151169A JP2021030336A JP 2021030336 A JP2021030336 A JP 2021030336A JP 2019151169 A JP2019151169 A JP 2019151169A JP 2019151169 A JP2019151169 A JP 2019151169A JP 2021030336 A JP2021030336 A JP 2021030336A
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
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Abstract
Description
図1には、粘着テープ貼着工程の実施態様を示す斜視図が示されている。粘着テープ貼着工程を実施するに際し、まず、図1に示す加工対象であるウエーハWと、ウエーハWに貼着する粘着テープTと、粘着テープ貼着工程、及び後述する熱圧着シート配設工程を実施するためのチャックテーブル100を用意する。ウエーハWは、たとえば、シリコン(Si)からなり、複数のデバイスDが分割予定ラインによって区画され表面Waに形成されている。粘着テープTは、例えば、略ウエーハWと同形状に設定された円形のポリ塩化ビニルシートと、該ポリ塩化ビニルシートの表面に塗布された粘着剤(例えばアクリル樹脂)とから構成される。チャックテーブル100は、通気性を有する多孔質のポーラスセラミックからなる円盤形状の吸着チャック100aと、吸着チャック100aの外周を囲繞する円形枠部100bとからなり、図示しない吸引手段を作動することにより吸着チャック100aの上面(保持面)に載置されるウエーハWを吸引保持することができる。
上記したように粘着テープTを貼着したならば、図2に示すように、熱圧着シート配設工程を実施する。まず、上記した粘着テープ配設工程により表面Waに粘着テープTが貼着されたウエーハWを用意し、図2に示すように、ウエーハWの粘着テープTが貼着された表面Wa側を上に、裏面Wb側を下にして、チャックテーブル100の吸着チャック100aの中心に載置する。吸着チャック100aにウエーハWを載置したならば、ウエーハWに貼着された粘着テープTの上に、20〜100μmの厚みで形成された円形の熱圧着シート110が載置される。熱圧着シート110としては、ポリオレフィン系シート、又はポリエステル系シートが選択可能であり、ポリオレフィン系シートである場合は、例えば、ポリエチレン(PE)シートが選択される。図2から理解されるように、吸着チャック100aの直径は、ウエーハWの直径よりもやや大きく設定されており、ウエーハWが吸着チャック100aの中心に載置されることにより、ウエーハWの外周を囲むように吸着チャック100aが露出した状態となる。熱圧着シート110は、少なくともウエーハWを覆うことが可能な大きさであり、好ましくは、吸着チャック100aの直径よりも大きい直径で形成され、チャックテーブル100の円形枠部100bよりも僅かに小さい直径で形成される。これにより、吸着チャック100aの全面及びウエーハWが熱圧着シート110で覆われる。なお、粘着テープT上に載置される熱圧着シート110には糊剤等の粘着層は形成されていない。
上記した熱圧着シート配設工程を実施したならば、次いで、一体化工程を実施する。一体化工程について、図3、及び図4を参照しながら説明する。
図4に示すように、熱圧着シート110が圧着されたウエーハWを吸引保持したチャックテーブル100上に、切断手段70(一部のみ示す。)を位置付ける。より具体的には、切断手段70は、熱圧着シート110を切断するための円盤形状の切削ブレード72と、切削ブレード72を矢印R1で示す方向に回転駆動するためのモータ74とを備え、切削ブレード72の刃先を、ウエーハWの外周位置になるように位置付ける。切削ブレード72がウエーハWの外周位置に位置付けられたならば、切削ブレード72を熱圧着シート110の厚みだけ切込み送りし、チャックテーブル100を矢印R2で示す方向に回転させる。これにより、熱圧着シート110が、ウエーハWの外周に沿って切断され、ウエーハWの外周からはみ出した熱圧着シート110の余剰部分を切断して切り離すことができる。以上により、切断工程が完了する。
上記したように、一体化工程によってウエーハW、粘着テープT、及び熱圧着シート110を一体化したならば、ウエーハWの裏面Wbを研削する研削工程を実施する。以下、図5を参照しながら、この研削工程を実施するのに好適な研削装置1について説明する。
上記した研削工程、洗浄工程が完了したならば、第2のカセット8に収容されたウエーハWの粘着テープT側から、上記した一体化工程において圧着され一体化された熱圧着シート110を剥離する剥離工程を実施する。剥離工程について、図8、図9を参照しながら、以下に説明する。
2:装置ハウジング
3:粗研削ユニット
4:仕上げ研削ユニット
5:ターンテーブル
6:チャックテーブル
7:第1のカセット
8:第2のカセット
9:仮置き手段
11:洗浄手段
12:第1の搬送手段
13:第2の搬送手段
14:第3の搬送手段
21:静止支持基板
22、23:案内レール
31:ユニットハウジング
31a:回転軸
33:粗研削ホイール
33a:研削砥石
34:電動モータ
35:移動基台
36:研削送り機構
41:ユニットハウジング
41a:回転軸
43:研削ホイール
43a:研削砥石
44:電動モータ
45:移動基台
46:研削送り機構
100:チャックテーブル
110:熱圧着シート
120:一体化手段
122:押圧部材
124:下面
A:被加工物搬入・搬出域
B:粗研削加工域
C:仕上げ研削加工域
D:デバイス
L1:研削水
L2:洗浄水
T:粘着テープ
W:ウエーハ
Wa:表面
Wb:裏面
Claims (7)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を研削するウエーハの加工方法であって、
ウエーハの表面に粘着テープを貼着する粘着テープ貼着工程と、
ウエーハの表面に貼着された粘着テープに熱圧着シートを配設する熱圧着シート配設工程と、
熱圧着シートを加熱すると共に平坦部材で押圧して、熱圧着シートを粘着テープに圧着して一体化する一体化工程と、
研削装置のチャックテーブルに熱圧着シート側を保持しウエーハの裏面に研削水を供給しながら所望の厚さに研削する研削工程と、
該チャックテーブルから一体化されたウエーハを搬出し、熱圧着シートを粘着テープから剥離する剥離工程と、から少なくとも構成されるウエーハの加工方法。 - 該剥離工程において、熱圧着シートを部分的に加熱、又は冷却して温度差を生じさせて粘着テープから該熱圧着シートを剥離する請求項1に記載のウエーハの加工方法。
- 該熱圧着シートは、ポリオレフィン系シート、又はポリエステル系シートである請求項1、又は2に記載のウエーハの加工方法。
- 該熱圧着シートが該ポリオレフィン系シートである場合は、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択される請求項3に記載のウエーハの加工方法。
- 該一体化工程において熱圧着シートを加熱する際の温度は、該ポリエチレンシートの場合は120℃〜140℃であり、該ポリプロピレンシートの場合は160℃〜180℃であり、該ポリスチレンシートの場合は220℃〜240℃である請求項4に記載のウエーハの加工方法。
- 該熱圧着シートがポリエステル系シートである場合は、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかから選択される請求項3に記載のウエーハの加工方法。
- 該一体化工程において熱圧着シートを加熱する際の温度は、該ポリエチレンテレフタレートシートの場合は250℃〜270℃であり、該ポリエチレンナフタレートシートの場合は160℃〜180℃である請求項6に記載のウエーハの加熱方法。
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TW109128072A TWI849199B (zh) | 2019-08-21 | 2020-08-18 | 晶圓加工方法 |
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JPH10125768A (ja) * | 1996-10-21 | 1998-05-15 | Nec Yamagata Ltd | 保護テープ剥し装置及びその剥し方法 |
JP2000038556A (ja) * | 1998-07-22 | 2000-02-08 | Nitto Denko Corp | 半導体ウエハ保持保護用ホットメルトシート及びその貼り付け方法 |
EP1022778A1 (en) * | 1999-01-22 | 2000-07-26 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
JP2005011839A (ja) * | 2003-06-16 | 2005-01-13 | Lintec Corp | 半導体装置の製造方法 |
WO2013021644A1 (ja) * | 2011-08-09 | 2013-02-14 | 三井化学株式会社 | 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム |
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