WO2006027900A1 - Appareil de revetement et de developpement, procede de formation de motif de reserve, appareil d'exposition et appareil de nettoyage - Google Patents

Appareil de revetement et de developpement, procede de formation de motif de reserve, appareil d'exposition et appareil de nettoyage Download PDF

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Publication number
WO2006027900A1
WO2006027900A1 PCT/JP2005/013397 JP2005013397W WO2006027900A1 WO 2006027900 A1 WO2006027900 A1 WO 2006027900A1 JP 2005013397 W JP2005013397 W JP 2005013397W WO 2006027900 A1 WO2006027900 A1 WO 2006027900A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
wafer
cleaning liquid
cleaning
unit
Prior art date
Application number
PCT/JP2005/013397
Other languages
English (en)
Japanese (ja)
Inventor
Taro Yamamoto
Masahiro Fukuda
Seiki Ishida
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2006027900A1 publication Critical patent/WO2006027900A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a coating unit that coats a resist on the surface of a semiconductor wafer, a developing unit that supplies a developing solution to a substrate after a liquid layer is formed on the surface and subjected to immersion exposure, and develops the substrate.
  • the present invention relates to an exposure apparatus and a cleaning apparatus that perform immersion exposure on a semiconductor wafer.
  • a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed. Then, a resist pattern is created.
  • Such processing is generally performed using a system in which an exposure apparatus is connected to a coating / developing apparatus that performs resist coating / development.
  • Immersion exposure is a technology that transmits light through ultrapure water, for example, and uses the feature that the wavelength of ArF at 193 nm is substantially 134 nm in water because the wavelength is shorter in water.
  • a wafer held in a horizontal position by a holding mechanism for example, the surface of the wafer W and a gap
  • a lens 10 is provided at the tip of the exposure means 1 arranged so as to face each other with a gap, and a solution for forming a liquid layer on the surface of the wafer W, such as water, is supplied to the outside of the lens 10.
  • a supply port 11 for suctioning and a suction port 12 for sucking and collecting the water supplied to the wafer W are provided.
  • a liquid film (water film) is formed between the lens 10 and the surface of the wafer W. Is done. Light emitted from a light source (not shown) and passed through the lens 10 passes through the liquid film and is irradiated onto the wafer W, whereby a predetermined circuit pattern is transferred to the resist.
  • the exposure means 1 is slid sideways to the position corresponding to the next transfer area (shot area) 13.
  • the circuit pattern is sequentially transferred to the surface of the wafer W by arranging the exposure means 1 and repeating the operation of irradiating light. Note that the shot region 13 is shown larger than the actual size.
  • the photoresist process using the immersion exposure described above has the following problems. That is, it is difficult to completely eliminate particles in a space where force processing is performed in a tailor room where a downflow is formed in wafer processing in the photoresist process.
  • the particles adhere to the resist of a wafer that has undergone a resist coating process and the wafer undergoes immersion exposure in that state.
  • the particles travel along the liquid film and move on the resist surface.
  • the exposure means moves together with the liquid film, and the resist pattern is sequentially transferred onto the wafer surface.
  • the exposure is performed by the particles every time it is transferred. It will be disturbed. As a result, transfer of the resist pattern is hindered, and defective portions of the resist pattern are scattered on the wafer.
  • a liquid film is formed on the wafer surface, and the liquid film or droplets easily adsorb particles. Therefore, compared to the normal exposure process, there is a higher probability that particles will adhere to the wafer after immersion exposure, and the liquid film used at the time of immersion exposure becomes droplets on the periphery of the wafer. Immediately after remaining on the inclined surface, particles are easily adsorbed on the peripheral edge.
  • the wafer is cleaned by the cleaning unit to remove the particles after applying the photoresist, before performing immersion exposure, and after performing Z or immersion exposure and before performing heat treatment. It is effective.
  • coating units and development units are arranged, called process blocks, and so on.
  • the throughput is increased by increasing the number of original processing units as much as possible. It is a good idea to place the cleaning unit in the interface block that bridges the process block and the exposure equipment because there are circumstances that must be earned.
  • a unit for cleaning a wafer As is well known, it is combined with a coating unit and a developing unit, so that the wafer is rotated while supplying a cleaning liquid to the central portion of the wafer, and then shaken and dried. Spin cleaning is common.
  • Patent Document 1 after the cleaning liquid is discharged from above the both ends of the wafer to flow on the wafer, it is sucked together with the suction mechanism force developer provided above the center of the wafer. And drying apparatus is disclosed. However, even with such an apparatus, the edge force of the wafer will cause the used cleaning liquid to flow down. For this reason, it is necessary to provide a cup body having an opening on the upper side so as to surround the wafer, and this cup body hinders downsizing of the apparatus.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-95708 (Pages 8, 9, 12, and 20)
  • the present invention has been made based on such circumstances, and an object of the present invention is a photoresist process including immersion exposure, which is performed after resist application and before immersion exposure. It is possible to remove particles adhering to the wafer after immersion exposure and before development with a simple structure, while satisfying the requirement of removing particles derived by immersion exposure, a coating and developing device Another object is to provide a technique that does not hinder the space saving of the exposure apparatus. Another object of the present invention is to provide a cleaning apparatus capable of cleaning a wafer with a simple structure.
  • the present invention relates to a coating unit for applying a resist to the surface of a semiconductor wafer, and an image unit for supplying a developing solution to the semiconductor wafer after being subjected to immersion exposure by forming a liquid layer on the surface and developing it.
  • the cleaning liquid discharge port is formed so as to be opposed to the surface of the semiconductor wafer held on the substrate and has a length corresponding to the approximate diameter of the semiconductor wafer, and the cleaning liquid discharge port force is used to suck the cleaning liquid discharged to the surface of the semiconductor wafer.
  • a suction port having a length substantially the same as that of the cleaning liquid discharge port is disposed on both sides of the cleaning liquid discharge port.
  • a nozzle unit including the rotation unit that rotates the wafer holding unit relative to the nozzle unit around a vertical axis, and a cleaning position that faces the surface of the semiconductor wafer held by the wafer holding unit. And a moving mechanism that moves the surface force of the semiconductor wafer between the retracted position and the retracted position.
  • the “cleaning liquid discharge port” is not limited to a slit-like discharge port, and includes a discharge hole group in which a large number of discharge holes are arranged. If the cleaning liquid discharge port is made longer than the “length corresponding to the approximate diameter of the semiconductor wafer,” the discharge liquid cleaning liquid that protrudes from the wafer will only spill, and there is no technical meaning. The case where the length is longer than the “length corresponding to the approximate diameter of” is also included in the scope of the right of the present invention.
  • a liquid layer is formed on the surface of the semiconductor wafer, and immersion exposure is performed, and then development is performed on the surface of the wafer.
  • a cleaning process is performed in which a semiconductor wafer is cleaned after resist coating and before immersion exposure. The cleaning process holds the semiconductor wafer on the wafer.
  • the cleaning liquid is sucked from the suction port provided in the nozzle part while being discharged onto the surface of the wafer, and the band-shaped region along the diameter of the semiconductor wafer is cleaned.
  • rotation resist pattern forming method characterized by comprising the steps of cleaning the band-like region in the same manner as in the step at each rotational position is carried out.
  • the cleaning liquid may be discharged while the wafer is continuously rotated.
  • a coating unit that coats a resist on the surface of a semiconductor wafer, and development in which a developer is supplied to the semiconductor wafer that has been subjected to immersion exposure by forming a liquid layer on the surface and developed.
  • a cleaning unit for cleaning the semiconductor wafer after immersion exposure and before development.
  • the cleaning unit includes a wafer holding unit for holding the semiconductor wafer horizontally, and the wafer holding unit on the vertical axis.
  • the central portion side of the semiconductor wafer as viewed from the lower cleaning liquid discharge port is the front
  • the lower suction port surrounding the lower cleaning liquid discharge port from at least the front side and the three sides, and the side surface portion of the U-shaped portion.
  • a side suction port for sucking the cleaning liquid, and a moving mechanism for moving the U-shaped portion between a cleaning position surrounding the peripheral edge of the semiconductor wafer and a retracted position retracted from the cleaning position And characterized by comprising
  • the U-shaped portions may be provided so as to face each other in the diameter direction of the semiconductor wafer.
  • the lower cleaning liquid discharge port is formed as an elongated discharge port in which the inner force of the semiconductor wafer extends outward, and the lower suction port is a part extending along the discharge port on both sides of the lower cleaning liquid discharge port. May be provided.
  • the coating and developing apparatus for example, after applying a resist on the surface of a semiconductor wafer, a liquid layer is formed on the surface of the semiconductor wafer and subjected to immersion exposure, and then the image liquid is applied to the surface of the wafer.
  • the semiconductor wafer includes a cleaning process for cleaning after immersion exposure and before developing, and the cleaning process is performed horizontally on the wafer holder. Holding the wafer, and then positioning the U-shaped portion relatively so as to surround the peripheral edge of the semiconductor wafer held by the wafer holding portion.
  • a resist pattern forming method including the above is performed. In the resist pattern forming method, the cleaning liquid may be discharged while continuously rotating the wafer, not limited to rotating the wafer intermittently.
  • a coating unit for applying a resist to the surface of a semiconductor wafer, and a developer is supplied to the semiconductor wafer that has been subjected to immersion exposure by forming a liquid layer on the surface and developed.
  • a cleaning unit for cleaning the semiconductor wafer after immersion exposure and before development includes a wafer holding unit for holding the semiconductor wafer horizontally, and a wafer holding unit.
  • a cleaning liquid discharge port that is formed to face the surface of the held semiconductor wafer and has a length substantially equivalent to the diameter of the semiconductor wafer, and the cleaning liquid discharged from the cleaning liquid discharge port to the surface of the semiconductor wafer is sucked.
  • the wafer holding unit is disposed relative to the nozzle unit, and the nozzle unit is disposed along both sides of the cleaning liquid discharge port and includes a suction port having substantially the same length as the cleaning liquid discharge port.
  • a rotation mechanism that rotates about a vertical axis, a U-shaped portion that is provided at both ends of the nozzle portion and that surrounds the periphery of the semiconductor wafer held by the wafer holding portion, and U-shaped
  • a lower cleaning liquid discharge port that discharges the cleaning liquid from the inside of the lower surface portion of the semiconductor wafer to the peripheral edge of the back surface of the semiconductor wafer, a suction port that is provided on a side surface portion of the U-shaped portion and sucks the cleaning liquid, and the nozzle portion.
  • a moving mechanism for moving between a cleaning position facing the surface of the semiconductor wafer held by the wafer holding unit and a retreat position where the surface force of the semiconductor wafer is retracted.
  • the coating / developing apparatus may include a suction die for sucking a cleaning liquid on a lower surface portion of the U-shaped portion.
  • the suction port is provided so as to surround the lower cleaning liquid discharge port from at least three sides of the front and both sides when the central portion side of the semiconductor wafer is viewed from the front as viewed from the lower cleaning liquid discharge port.
  • the lower cleaning liquid discharge port is formed as an elongated discharge port extending from the inner side to the outer side of the semiconductor wafer, and the lower suction port is a part extending along the discharge port on both sides of the lower cleaning liquid discharge port. With, you can.
  • the semiconductor wafer includes a cleaning process for cleaning after immersion exposure and before developing, and the cleaning process includes a wafer holding unit. And horizontally positioning the nozzle portion so that the nozzle portion faces the semiconductor wafer and the U-shaped portions provided at both ends of the nozzle portion surround the peripheral portion of the semiconductor wafer. And a cleaning liquid discharge port force provided in the nozzle portion, while discharging the cleaning liquid onto the surface of the semiconductor wafer.
  • a step of washing the portion in the same manner as in the above step.
  • the cleaning liquid may be discharged while the wafer is continuously rotated, without being limited to rotating the wafer sequentially and intermittently.
  • a rotating mechanism is provided so as to intermittently rotate the wafer holding unit in order to sequentially wash, for example, the band-shaped region along the diameter of the semiconductor wafer by the nozzle unit. It may be controlled.
  • the cleaning liquid may be discharged from the cleaning liquid discharge port in the process of sequentially rotating the wafer intermittently.
  • the cleaning liquid may be discharged from the cleaning liquid discharge port without continuously rotating the wafer.
  • each of the coating and developing devices described above is configured to reciprocate for reciprocally moving the nozzle portion relative to the wafer holding portion in the tangential direction of the semiconductor wafer when the cleaning solution is discharged from the cleaning solution discharge locuser.
  • An operation mechanism may be provided.
  • the moving mechanism may also serve as the reciprocating mechanism.
  • the coating and developing apparatus described above includes, for example, a processing block including the coating unit and the developing unit, and an interface block interposed between the processing block and an exposure machine that performs immersion exposure on the semiconductor wafer.
  • the cleaning unit may be provided in an interface block.
  • each of the coating and developing devices described above includes an interface interposed between a processing block including the coating unit and the developing unit, and an exposure machine that performs immersion exposure on the processing block and the semiconductor wafer.
  • the cleaning unit may be provided in an interface block.
  • the resist pattern forming method includes a step of reciprocating the nozzle portion relative to the wafer holding portion in the tangential direction of the semiconductor wafer when the cleaning solution is discharged from the cleaning solution discharge port. May be included. Furthermore, the resist pattern type described above The forming method may include a step of heating the semiconductor wafer after immersion exposure and before development, and the cleaning step may be performed before the step of heating.
  • the above-described cleaning unit is provided in an exposure apparatus that performs immersion exposure by forming a liquid layer on the surface of a semiconductor wafer coated with a resist.
  • Still another invention is characterized in that the cleaning device comprises the above-described cleaning unit.
  • the cleaning unit since the wafer surface is cleaned by the cleaning unit after the resist coating and before the immersion exposure, the particles adhering to the wafer surface during the immersion exposure. Therefore, it is possible to avoid problems caused by moving on each liquid exposure layer on the liquid layer, and the resist pattern can be accurately transferred. Then, the cleaning liquid is sucked out from the cleaning liquid discharge port with a length corresponding to the approximate diameter of the wafer while the cleaning liquid is also sucked into the wafer surface. There is no. Therefore, in the cleaning unit, it is not necessary to provide a cup body for collecting the cleaning liquid around the wafer holding portion, so that the unit can be saved in space, and as a result, enlargement of the coating and developing apparatus can be avoided.
  • the periphery of the wafer is cleaned after immersion exposure, and after immersion exposure, droplets remain on the periphery of the wafer and particles are likely to adhere.
  • particle contamination in the process after immersion exposure can be prevented.
  • the peripheral portion of the wafer is sandwiched by the U-shaped portion formed so as to surround the peripheral portion of the wafer, the cleaning liquid is discharged from the upper surface portion of the U-shaped portion to the peripheral portion of the wafer and sucked from the side surface portion, The cleaning liquid is discharged from the lower cleaning liquid discharge port on the lower surface of the U-shaped part to the back side of the peripheral edge of the wafer, and is sucked by the suction port that surrounds the discharge port from three sides.
  • the shape-type force will not spill. Therefore, it is not necessary to provide a cup body for collecting the cleaning liquid around the wafer holding unit, so that the space for the cleaning unit can be saved, and as a result, enlargement of the coating and developing apparatus can be avoided.
  • the peripheral portion and the surface of the wafer are cleaned by the cleaning unit after the immersion exposure, the dissolved product remains on the surface of the wafer after the immersion exposure. However, it can be removed by the cleaning unit, and the particle contamination in the process after immersion exposure can be prevented.
  • the cleaning unit as described above, there is no possibility that the cleaning liquid spills due to the surface force of the wafer, and the U-shaped portion formed so as to surround the peripheral edge of the wafer is used to discharge the cleaning liquid. Since suction is performed, there is no risk of the spilling of the U-shaped force cleaning solution, and an increase in the size of the coating and developing device can be avoided.
  • the cleaning unit described above since the cleaning unit described above is provided, wafers before immersion exposure and after Z or immersion exposure can be cleaned, and the exposure apparatus can be increased in size. Can be avoided.
  • the cleaning apparatus of the present invention uses the above-described cleaning unit, it can be small and have a simple configuration.
  • FIG. 1 is a plan view showing a coating and developing apparatus according to an embodiment of the present invention.
  • FIG. 2 is an overall perspective view showing a coating and developing apparatus according to an embodiment of the present invention.
  • FIG. 3 is a perspective view showing an interface portion of the coating and developing apparatus.
  • FIG. 4 is a perspective view showing a nozzle portion constituting a cleaning unit incorporated in the coating and developing apparatus.
  • FIG. 5 is a bottom view showing an example of a top plate in the nozzle portion.
  • FIG. 6 is a longitudinal sectional view of the nozzle part.
  • FIG. 7 is a cross-sectional plan view of a U-shaped part in the nozzle part.
  • FIG. 8 is an explanatory view showing the dynamics of the nozzle part and the wafer before cleaning.
  • FIG. 9 is a longitudinal sectional view of the nozzle part during cleaning.
  • FIG. 10 is a side view of the nozzle portion during cleaning.
  • FIG. 11 is an explanatory diagram showing the dynamics of the nozzle part and the wafer after completion of cleaning.
  • FIG. 12 is an explanatory view showing a cleaning region of a U-shaped part in the nozzle part.
  • FIG. 13 is a perspective view showing a cleaning unit of a resist pattern forming apparatus according to another embodiment of the present invention.
  • FIG. 14 is a perspective view showing a cleaning unit of a resist pattern forming apparatus according to another embodiment of the present invention.
  • FIG. 15 is an explanatory view showing exposure means for immersion exposure of a wafer.
  • FIG. 16 is an explanatory view showing a state in which the wafer surface is subjected to immersion exposure by the exposure means.
  • FIG. 1 is a plan view showing a resist pattern forming apparatus in which a coating / developing apparatus including a wafer cleaning unit according to an embodiment of the present invention is connected to an exposure apparatus that performs immersion exposure
  • B1 is a carrier mounting portion for loading and unloading the carrier 2 having a wafer W force, eg, 13 wafers, and a carrier station 20 having a mounting portion 20a on which a plurality of carriers 2 can be placed side by side.
  • An opening / closing part 21 provided on the front wall as viewed from the carrier station 20 and a delivery means A1 for taking out the wafer W from the carrier 2 through the opening / closing part 21 are provided.
  • a processing unit (processing block) B 2 surrounded by a housing 22 is connected to the back side of the carrier mounting unit B1, and the front side force is also sequentially heated and cooled in this processing unit B2.
  • the main transfer means A2 and A3 that deliver wafers W between each of the three shelf units Ul, U2, U3 and the liquid processing units U4, U5 are arranged alternately. And That is, the shelf units Ul, U2, U3 and the main transfer means A2, A3 are arranged in a line in the front-rear direction when viewed from the carrier mounting part B1, and an opening for wafer transfer (not shown) is provided at each connection site.
  • the wafer W can freely move in the processing block B2 from the shelf unit U1 on one end side to the shelf unit U3 on the other end side.
  • the main transport means A2 and A3 are arranged on one side of the shelf units Ul, U2 and U3 arranged in a line in the front and rear direction as viewed from the carrier mounting part B1, and on one side of the right side liquid processing units U4 and U5, which will be described later, for example. It is placed in a space surrounded by a partition wall 23 composed of a part and a back part forming one side on the left side.
  • reference numeral 24 denotes a temperature / humidity adjustment unit equipped with a temperature control device for the treatment liquid used in each unit, a duct for temperature / humidity adjustment, and the like.
  • the shelf units Ul, U2, and U3 are pre-treatments for processing performed in the liquid processing units U4 and U5.
  • Various units for processing and post-processing are stacked in multiple stages, for example, 10 stages, and the combination is a heating unit (PABX not shown) that heats the wafer W (beta), and cools the wafer W
  • a cooling unit and the like are included.
  • the liquid processing units U4 and U5 are provided with an antireflection film coating unit (BARC) 26, a resist coating unit (COT) 27, and a wafer W on the chemical solution storage section such as resist and developer.
  • the development unit (DEV) 28 and the like for supplying a developing solution to the developing process are stacked in a plurality of stages, for example, five stages.
  • An exposure unit B4 is connected to an inner side of the shelf unit U3 in the processing unit B2 via an interface unit (interface block) B3.
  • the interface unit B3 is composed of a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit B2 and the exposure unit B4.
  • a first wafer transfer unit 31 and a second wafer transfer unit 32 are provided, respectively.
  • the first wafer transfer unit 31 includes an arm 31A that can move up and down, rotate about the lead straight axis, and move forward and backward.
  • the second wafer transfer section 32 includes an arm 32A that can be moved up and down and rotated about a vertical axis.
  • the first transfer chamber 3A has a transfer unit (TRS3) 37, each having a cooling plate, for example, on the right side when viewed from the carrier mounting unit B1 side with the first wafer transfer unit 31 in between.
  • TRS3 transfer unit
  • Two high-accuracy temperature control units (CPL2) 39 and a heating / cooling unit (PEB) 38 for post-exposure beta (PEB) processing of a wafer W that has been subjected to immersion exposure are provided, for example, stacked one above the other.
  • two buffer cassettes (SBU) 34 and 35 for temporarily storing a plurality of, for example, 13 wafers W are provided on the left side, for example, continuously in the vertical direction.
  • a stage 4 is provided on the left side of the central portion as a wafer holding portion related to the cleaning unit as viewed from the carrier placement portion B1 side.
  • the cleaning queue refers to a group of components that contribute to the cleaning process of the wafer W.
  • all the components are provided in the second transfer chamber 3B.
  • the stage 4 is provided on a drive mechanism 41 including a rotation mechanism installed in the lower part of the second transfer chamber 3B via a shaft portion 42 standing in the vertical direction.
  • Stage 4 is a vacuum chucking force that sucks and attracts the center of the back side of Ueno and W, and holds the Ueno and W by the drive mechanism 41. It is configured to rotate around the vertical axis.
  • This stage 4 also serves as a delivery stage for delivering the wafer and W from the arm 40A on the developing and developing apparatus side from the arm 40 on the exposure section B4 side.
  • a nozzle unit 5 relating to the cleaning unit is provided further to the left of the stage 4 (Y direction in Fig. 3) when viewed from the carrier mounting unit B1 side.
  • the nozzle portion 5 includes a top plate 51 and U-shaped portions 52 and 52 provided at both ends of the top plate 51, respectively, and the top plate 51 is directed toward the stage 4 in a horizontal posture. It is configured to be horizontally movable in a direction orthogonal to the longitudinal direction of 51.
  • the arm 40 on the exposure unit B4 side is configured to be movable up and down, rotatable about a vertical axis, and movable back and forth.
  • the nozzle portion 5 constituting a part of the cleaning unit and its peripheral portion will be described with reference to Figs.
  • the top plate 51 of the nozzle unit 5 has a length in the longitudinal direction longer than the diameter of the wafer W, and is configured as a belt-like plate.
  • FIG. 5 is a view of the top plate 51 as viewed from the lower surface, and a plurality of discharge holes 53 are provided linearly along the longitudinal direction at the center of the top plate 51.
  • the length between both ends of these discharge holes 53 group is set to be substantially the same as the diameter of wafer W, and the diameter of each of these discharge holes 53 is more preferably O.lm m to 3 mm. Is 0.5 to lmm.
  • the cleaning liquid discharge port 54 is formed by a large number of the 53 discharge holes 53.
  • the cleaning liquid discharge port 54 may be a slit having a length substantially the same as the diameter of the wafer W.
  • suction ports 55 and 56 On both sides of the cleaning liquid discharge port 54, suction ports 55 and 56 having a length substantially equal to the length of the cleaning liquid discharge port 54 are formed in a slit shape along the cleaning liquid discharge port 54, respectively.
  • the width of the suction ports 55 and 56 is preferably 0.05 mm to 1.0 mm, more preferably 5.0 to 10.0 mm.
  • the distance between the cleaning liquid discharge port 54 and the suction ports 55 and 56 is preferably 2.0 to 20.0 mm, more preferably 5.0 to LO.Omm.
  • FIG. 6 is a longitudinal sectional view of the nozzle portion 5 shown in FIG. 4 as seen by cutting the bottom surface of the top plate 51 and the U-shaped portion 52.
  • the cleaning liquid discharge port 54 communicates with the cleaning liquid supply pipe 54a at the center in the longitudinal direction of the top panel 51 via a passage in the top panel 51.
  • the cleaning liquid supply pipe 54a is connected to the cleaning liquid supply pipe 54a via the valve 54b. It is connected to the cleaning liquid supply source 54c.
  • the suction ports 55 and 56 are The suction pipes 55a and 56a located on both sides of the cleaning liquid supply pipe 54a are connected to the cleaning liquid supply pipe 54a through a passage in the plate 51. Connected to the suction means 55c.
  • each passage in the top plate 51 looks like one (a total of three), but it actually extends in the length direction of the top plate 51 along the way, and the cleaning liquid discharge port 54, suction port It is formed as a space communicating with 55 or suction port 56.
  • Both ends of the top plate 51 can be roughly folded downward at a right angle, and the lower end of the top plate 51 is folded inward at a right angle so that the inner side of the folded portion is slightly inside. If this is called the top plate 51, this nozzle portion 5 can be referred to as a structure in which U-shaped portions 52, 52 are provided at both ends of the top plate 51. Proceed.
  • FIG. 7 is a transverse plan view showing the U-shaped part 52.
  • the portions of the U-shaped portion 52 that face each other up and down are referred to as the upper surface portion and the lower surface portion, respectively, and the lower surface portion denoted by reference numeral 60 when the central portion side of the wafer W as viewed from the U-shaped portion 52 is the front side for convenience.
  • a slit-like cleaning liquid discharge port 61 having a length of about 10 mm, for example, extending in the front-rear direction is formed at the center in the left-right direction. Note that the upper surface portion corresponds to both end portions of the top plate 51, and is not labeled.
  • the rear end side of the cleaning liquid discharge port 61 is located directly below the peripheral edge of the wafer W, and the peripheral edge of the back surface of the wafer W can be cleaned by the cleaning liquid discharge port 61.
  • a suction port 62 is provided around the cleaning liquid discharge port 61 so as to surround the front and both sides of the cleaning liquid outlet 61 in a U shape.
  • the suction port 62 is connected to the cleaning liquid discharge port 61 on both sides of the cleaning liquid discharge port 61. It is formed so as to extend to approximately the same length along.
  • the cleaning liquid discharge port 61 corresponds to the lower surface cleaning liquid discharge port, and may have a plurality of discharge holes arranged in the length direction without being slit-shaped.
  • the suction port 62 sucks the cleaning liquid discharged from the cleaning liquid discharge port 61 to the back side of the wafer W. If the suction is surely performed even if it is not a continuous U-shaped suction port, It may be a discontinuous, for example, U-shaped suction port.
  • the width of the slit of the cleaning liquid discharge port 61 is preferably 0.05 to 1.0 mm, and more preferably 0.1 to 0.5 mm.
  • the distance between the second cleaning liquid discharge port 61 and the suction port 62 is preferably 2.0 to 20.0 mm, more preferably 5.0 to 10.0 mm. It is.
  • a connection unit 63 is joined to the lower surface portion 60 of each U-shaped portion 52, and a cleaning liquid supply pipe 64 and a suction pipe 65 are connected to the connection unit 63.
  • the cleaning liquid discharge port 61 in the lower surface portion 60 communicates with the cleaning liquid supply pipe 64 through a passage formed in the connection unit 63, and the suction port 62 is a passage different from the passage formed in the connection unit 63. It communicates with the suction pipe 65 via the.
  • the proximal ends of the cleaning liquid supply pipe 64 and the suction pipe 65 are connected to the cleaning liquid supply source 54c and the suction means 55c shown in FIG. 6, respectively.
  • a suction port 66 for sucking the cleaning liquid on the upper side and the lower side of the wafer W is formed on the side surface portion of each U-shaped portion 52.
  • the suction port 66 is a suction pipe 67. To the suction means 55c shown in FIG.
  • the nozzle unit 5 has a force such as a ball screw mechanism via the arm 57.
  • the moving mechanism 58 also cleans the wafer W by the moving mechanism 58, and does not obstruct the delivery of the wafer W in the stage 4. It is now possible to move horizontally between the retracted position.
  • the nozzle unit 5 is transferred by the moving mechanism 58 to the cleaning position, that is, the UNO, W It is conveyed to the position where the peripheral edge of is inserted through the space.
  • the U-shaped portion 52 surrounds the periphery of the wafer and W, and the cleaning liquid discharge port 54 formed linearly on the top plate 51 matches the diameter of the wafer W. (Fig. 8 (c) and Fig. 4).
  • a cleaning liquid such as pure water is supplied from the cleaning liquid discharge port 54 of the top plate 51 to the surface of the wafer W, and the suction ports 55 and 56 on both sides of the cleaning liquid discharge port 54 are in a suction state. Also in the U-shaped part 52, the peripheral edge of the wafer W is back from the cleaning liquid discharge port 61 on the lower surface part 60. While pure water is supplied to the surface side, the suction port 62 on the lower surface portion and the suction port 66 on the side surface portion are in the suction state, and thus the cleaning of the surface and the peripheral portion of the wafer W is started. Note that the suction timing is slightly before the supply of pure water.
  • FIG. 9 is a schematic longitudinal front view of the top plate 51 cut along the width direction when the wafer W is cleaned. Pure water is discharged from the cleaning liquid discharge port 54 onto the surface of Weno and W. The discharged pure water diffuses to both sides of the cleaning liquid discharge port 54 while filling between the surface of the wafer W and the lower surface of the top plate 51, for example.
  • suction is performed from the suction ports 55 and 56 on both sides, pure water is sucked into the suction ports 55 and 56 and does not spill from the wafer W.
  • the cleaning liquid is applied to the back surface of the peripheral portion of the wafer W from the slit-like lower cleaning liquid discharge port 61 in the U-shaped portion 52. Be sprayed.
  • suction is performed from the suction port 66 on the side surface of the U-shaped portion 52, a part of the cleaning liquid sprayed on the back surface is sucked into the suction port 66 along the suction flow.
  • a part of the cleaning liquid sprayed on the back surface falls to the lower side, but a suction port provided in a U shape on the front side of the lower cleaning liquid discharge port 61 (the center side of the wafer W) and on both sides.
  • the nozzle unit 5 is reciprocated by the moving mechanism 58 horizontally along the tangential direction of the wafer W as shown in FIG. 11 (a). It is done while being moved.
  • FIG. 12 shows an example of the positional relationship between the peripheral edge of the wafer W and the lower cleaning liquid discharge port 61 and the suction port 62 in the U-shaped portion 52 in this reciprocating movement, and corresponds to this reciprocating movement range.
  • the band-like region indicated by the dotted line 200 is cleaned.
  • the end portions of the cleaning liquid discharge port 54 and the lower cleaning liquid discharge port 61 of the top plate 51 are disengaged from the peripheral edge of the wafer W, and the cleaning liquid from these discharge ports 54 and 61 is respectively a lower surface portion of the U-shaped portion 52.
  • the air is blown out toward the top surface, but is sucked in from the suction port 66 on the side surface portion and the suction port 62 on the bottom surface portion 60, and does not spill from the nozzle portion 5.
  • the central angle ⁇ of the wafer W corresponding to the movement region of the cleaning liquid discharge ports 54 and 61 when the nozzle unit 5 reciprocates is set to 30 degrees, for example, but is not limited to this angle.
  • the reciprocating movement is performed once so as to cover one side of the belt-like region, but may be performed reciprocating twice or more.
  • the force widely described between the wafer W and the top plate 51 for the sake of convenience is actually about 0.5 to 5 mm during this period, and the cleaning liquid supplied to the surface of the wafer W is applied to the surface. All the liquid is sucked from the suction ports 55 and 56, and the cleaning liquid on the back side of the peripheral portion of the wafer W is also sucked from the suction port 66 on the side surface of the U-shaped portion 52. It does not remain.
  • a drying mechanism for spraying a drying gas onto the surface of the wafer W may be provided integrally with the nozzle unit 5 or separately.
  • the drying mechanism for example, a configuration in which a drying gas supply port is provided along the longitudinal direction on both sides of the suction ports 55 and 56 of the top plate 51 of the nozzle unit 5 can be employed.
  • the periphery of the wafer is cleaned after immersion exposure. After immersion exposure, droplets remain on the periphery of the wafer so that particles are likely to adhere.
  • by cleaning the periphery of the wafer it is possible to prevent particle contamination in the process after immersion exposure. Further, even if a dissolved product generated during immersion exposure remains on the surface of the wafer, it can be removed, and particle contamination in the process after immersion exposure can be prevented.
  • the wafer W after immersion exposure is cleaned before development. However, in a system that develops the wafer W without heating, for example, it is necessary to carry out it before development.
  • the cleaning liquid Since the cleaning liquid is sucked from the suction ports 55 and 56 arranged on both sides while discharging the cleaning liquid from the cleaning liquid discharge port 54 having a length corresponding to the approximate diameter of the wafer W to the surface of the wafer W, The cleaning liquid does not spill over the surface force of the wafer. Further, as already described in detail, since the cleaning liquid discharged to the peripheral edge of wafer W is also sucked from the suction ports 62 and 66 of the U-shaped part 52, the cleaning liquid does not spill from the U-shaped part 52. For this reason, it is not necessary to install a cup body for collecting the cleaning liquid around the space, so that space can be saved. Therefore, even if a coating and developing apparatus incorporating the cleaning unit is used, an increase in size can be prevented.
  • the nozzle part 5 is reciprocated, whereby it is possible to perform reliable cleaning without the possibility of generating an unwashed part, but the nozzle part 5 is reciprocated.
  • the wafer W may be rotated intermittently at a fine angular pitch without being moved, and the cleaning liquid may be discharged at each angular position, or the wafer W may be rotated at a low rotational speed such that the cleaning liquid does not spill. Make sure that the cleaning solution is discharged while the is rotating continuously.
  • the distance between the lower surface portion 60 and the wafer W may be reduced so that the gap between them is filled with the cleaning liquid.
  • a configuration may be adopted in which a space is formed between the two and the cleaning liquid is scattered. In these cases, it is important to arrange the suction port so that the cleaning solution can be sucked without dropping. In view of this point force, if the three sides of the lower cleaning liquid discharge port 61 are surrounded by the suction port 62 as in the embodiment and the suction port 66 is provided on the side surface, the discharge is performed as detailed in the explanation of the operation. This is a desirable configuration because the cleaning liquid discharged from the outlet 61 can be reliably sucked.
  • a cleaning unit that cleans only the peripheral portion of the wafer W without cleaning the surface of the wafer W. It may be used.
  • U-shaped portions 71 and 72 having the same structure facing each other can be horizontally moved by moving mechanisms 73 and 74, respectively.
  • Figure 4 shows the lower and side faces of the U-shaped parts 71 and 72.
  • the upper surface portion may have the same structure as the lower surface portion, for example, or a suction port provided only with a cleaning liquid discharge port for discharging the cleaning liquid to the surface of the peripheral portion of Ueno and W. It is good also as a structure which does not provide. In such a configuration, the cleaning liquid discharge port on the upper surface side corresponds to the upper cleaning liquid discharge port in the present invention.
  • a cleaning unit for cleaning the wafer W before immersion exposure may be provided in the interface unit B3.
  • the nozzle portion 5 having the same structure as that shown in FIG. 4 may be used to have the same configuration as in the previous embodiment, but the surface of the wafer W is particularly cleaned before immersion exposure. Since it is important, the U-shaped portion 52 may be removed from the nozzle portion 5 shown in FIG. In this case, the force due to the suction force of the suction port, for example, rotating the wafer W continuously or intermittently without reciprocating the nozzle portion 5 from the viewpoint of reliably suctioning the cleaning liquid. Is preferred.
  • the cleaning liquid outlet 61 and the suction port 62 on the lower surface side of the U-shaped part 52 may be excluded.
  • FIG. 13 shows an example in which a cleaning unit for cleaning the wafer W before the immersion exposure is provided in the previous embodiment shown in FIG. 1 and FIG.
  • the This cleaning unit is also powered by the stage 81, the drive mechanism 82, the nozzle part 83 that does not have a U-shaped part, and the stage 81 moves from the arm of the transfer part 32 on the interface B3 side to the transfer part 40 of the exposure part B4 side. It also serves as a delivery stage where wafers W are delivered to the chamber.
  • the nozzle portion 83 is moved between a cleaning position located on the wafer W and a retracted position retracted from the wafer W by a moving mechanism (not shown).
  • liquid cleaning, heating, and cooling system processing units are arranged as densely as possible to reduce the size and improve throughput. It is better to install it at the interface unit B3 than at the processing unit B2.
  • the cleaning unit described so far is an invention of the cleaning device itself, and in this case, there is an effect that a small and simple structure can be obtained. Further, such a cleaning unit is provided on the exposure unit B4 side without being provided in the coating / developing apparatus, and is an invention of an exposure apparatus provided with a cleaning unit for cleaning the wafer W before immersion exposure and Z or after immersion exposure. Also In this case, the above-described effects can be obtained.

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un appareil de revêtement/développement par lequel des particules collées sur une tranche de semi-conducteur sont enlevées par une structure simple après revêtement de réserve et avant exposition par immersion ou après exposition par immersion et avant développement. Avant l'exposition par immersion, la tranche est nettoyée en utilisant une buse dotée d'orifices d'aspiration parallèles en forme de fente sur les deux côtés d'un orifice d'évacuation du liquide de nettoyage ayant une longueur sensiblement équivalente au diamètre de la tranche. La buse est munie d'une partie en forme de U, qui entoure la circonférence de la tranche, présente des orifices d'évacuation du liquide de nettoyage sur les côtés intérieurs d'une partie plane supérieure et d'une partie plane inférieure sur les deux parties du bord de la buse, un orifice d'aspiration entourant l'orifice d'évacuation du liquide sur une partie plane inférieure, et un orifice d'aspiration sur une partie plane latérale. La tranche est nettoyée après l'exposition par immersion et avant le développement en utilisant la buse. Le liquide de nettoyage étant aspiré tout en étant projeté sur la surface ou la circonférence de la tranche, il est inutile de placer un récipient autour de la tranche pour récupérer la solution de nettoyage. Par conséquent, un espace nécessaire à l'intégralité de l'appareil de revêtement/développement peut être économisé.
PCT/JP2005/013397 2004-09-10 2005-07-21 Appareil de revetement et de developpement, procede de formation de motif de reserve, appareil d'exposition et appareil de nettoyage WO2006027900A1 (fr)

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NL1032067C2 (nl) * 2005-06-30 2008-06-18 Taiwan Semiconductor Mfg Verwijderen van randkorrels bij immersielithografie.
EP2056164A1 (fr) * 2007-10-31 2009-05-06 ASML Netherlands B.V. Appareil de nettoyage et appareil lithographique de type à immersion
US7641406B2 (en) 2007-07-26 2010-01-05 Sokudo Co., Ltd. Bevel inspection apparatus for substrate processing
US7641405B2 (en) 2007-02-15 2010-01-05 Sokudo Co., Ltd. Substrate processing apparatus with integrated top and edge cleaning unit
CN101923286A (zh) * 2009-06-10 2010-12-22 东京毅力科创株式会社 涂覆、显影装置和基板的背面清洁方法
US8031324B2 (en) 2007-02-15 2011-10-04 Sokudo Co., Ltd. Substrate processing apparatus with integrated cleaning unit
US8932672B2 (en) 2006-02-02 2015-01-13 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
CN111045299A (zh) * 2020-01-02 2020-04-21 长江存储科技有限责任公司 一种显影洗边设备和显影洗边方法

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US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
JP4634822B2 (ja) * 2005-02-24 2011-02-16 株式会社東芝 レジストパターン形成方法および半導体装置の製造方法
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JP4761907B2 (ja) 2005-09-28 2011-08-31 株式会社Ｓｏｋｕｄｏ 基板処理装置
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JP2008042004A (ja) * 2006-08-08 2008-02-21 Tokyo Electron Ltd パターン形成方法およびパターン形成装置
JP2009071235A (ja) * 2007-09-18 2009-04-02 Sokudo:Kk 基板処理装置
US8051863B2 (en) * 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
JP5136103B2 (ja) 2008-02-12 2013-02-06 東京エレクトロン株式会社 洗浄装置及びその方法、塗布、現像装置及びその方法、並びに記憶媒体
KR101690047B1 (ko) 2008-05-09 2016-12-27 티이엘 에프에스아이, 인코포레이티드 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 장치 및 방법
JP5590602B2 (ja) * 2010-02-12 2014-09-17 サムスン電機ジャパンアドバンスドテクノロジー株式会社 ディスク駆動装置の生産方法及びその生産方法により生産されたディスク駆動装置
WO2017104745A1 (fr) * 2015-12-15 2017-06-22 千住金属工業株式会社 Dispositif de distribution de fluide et procédé de distribution de fluide

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NL1032067C2 (nl) * 2005-06-30 2008-06-18 Taiwan Semiconductor Mfg Verwijderen van randkorrels bij immersielithografie.
US7691559B2 (en) 2005-06-30 2010-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography edge bead removal
US8932672B2 (en) 2006-02-02 2015-01-13 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
US9477162B2 (en) 2006-02-02 2016-10-25 Screen Semiconductor Solutions Co., Ltd. Substrate processing method
US7641405B2 (en) 2007-02-15 2010-01-05 Sokudo Co., Ltd. Substrate processing apparatus with integrated top and edge cleaning unit
US8031324B2 (en) 2007-02-15 2011-10-04 Sokudo Co., Ltd. Substrate processing apparatus with integrated cleaning unit
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EP2056164A1 (fr) * 2007-10-31 2009-05-06 ASML Netherlands B.V. Appareil de nettoyage et appareil lithographique de type à immersion
CN101923286A (zh) * 2009-06-10 2010-12-22 东京毅力科创株式会社 涂覆、显影装置和基板的背面清洁方法
CN101923286B (zh) * 2009-06-10 2013-07-24 东京毅力科创株式会社 涂覆、显影装置和基板的背面清洁方法
CN111045299A (zh) * 2020-01-02 2020-04-21 长江存储科技有限责任公司 一种显影洗边设备和显影洗边方法
CN111045299B (zh) * 2020-01-02 2023-07-21 长江存储科技有限责任公司 一种显影洗边设备和显影洗边方法

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