1270924 九、發明說明： 【發明所屬之技術領域】 關於對半導體晶圓進行浸 本發明係關於塗布、顯影裝置，包括 光阻塗布之塗布單元，及對於其表面形心面進订 板供給顯影液以顯影之顯影單元；及， 液曝光之曝光裝置及洗淨裝置。 【先前技術】 ^往’構成半導體製造步驟之-的光阻步驟中，係於半導體 先阻主布•顯影之塗布•顯影裝置連接曝光裝置之***。 (EUvdp +象又之要求也在提南。對此，以極端紫外曝光 光了 Vl〇let Lith〇graphy)、電子束投影曝 fh ( Ejection Lithography)^^^^^(F2 ^ 肥r)進打曝光技術之開發進展中，另外，改良既有的 ίί ^ 或氟化氪(KrF)之曝光技術以提高解像度， πϋΐ面上形成能使光穿透之液相狀態進行冑光的方法（以下 :液曝光」）亦被探討。半導體及製造裝置業界由於財務的 a二級可此奴延長ArF曝光裝置之壽命，到45nm為止使用ArF， 2持使用爾以試圖更進—步之見解者。浸液曝光係利用使光 =透例如超純水巾之猶，使波長193nm之ArF於水巾由於波長 虻短，而實質上變成134nm之特徵。 、先使用® 15簡單地敘述進行該浸液曝光之曝光裝置。首先， =支持機構(未晝出）支持水平狀態之晶圓（例如晶圓w)表面隔 =隙相對面配置之曝光裝置1〇前端部，設有透鏡1〇，於該透鏡 ^外侧分別設有：供給口 11，用於供給在晶圓W表面形成液層 之溶液，例如水；吸引口 12，用於吸引對晶圓W供給之水以回收。 5 1270924 於此情形中’藉由一方面外/it ^人1 1处1 面從吸引口 12進行回收，W表面供給水，一方 膜(水膜）。從光源fUt透^與晶® Μ面之間形成液 射於晶圓W上，获出出而牙過透鏡10之光穿透該液膜照 又，恥射區域13畫得較實際為大。 口木 阻’ ΐϊΐ用浸液曝光之光阻步驟有以下的問題。即，光 脾d ’曰曰圓處理係於形成有下降氣流的清淨室内進行，但欲 光阻的微粒完全排除有困難。此處考慮例如於經 粒合你由+果於该⑽固之先阻表面形成液膜，則微 同日以ίΐίί表面移動。如前述’由於曝光裝置和液膜 只為晶圓-S 案1故即使微粒附著部位 浪杜地仏、丨> 也9由於被粒’在轉印時妨礙曝光。結果會妨 y、月另-J圖f轉印，使光阻圖案的缺陷部位散佈於晶圓上。 汾φα、八μ，，又液曝光的一個問題為，光阻於液膜側溶出，使 if上。尤其是，曝光終了後，雖然晶圓:液： 在於晶圓周緣部為斜面構造，前述溶出成分沒 百摔洛而遠在周緣部之傾斜面的可能性並不低。 故和成於晶κ表面，液職液滴容祕微粒吸附， 怎，，if里相比，浸液曝光後之晶圓上有微粒附著之可 周ϋ斜面上並直接殘留，因此，微粒容易吸附於該周緣部。 可能曝光後之晶圓，尤其是其周緣部，微粒附著的 布、顯影裝置側時，微粒會附著於搬送 的主要原因。而且，如果晶圓表面有微粒附著， !27〇924 =附著之雜溫度與其他雜之溫度*同，尤其，將於對化 光阻内擴散之减處理中，1270924 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a coating and developing device, a coating unit including a photoresist coating, and a developing solution for a surface-center-side binding plate thereof a developing unit for developing; and an exposure apparatus and a cleaning apparatus for liquid exposure. [Prior Art] In the step of forming a photoresist which is a step of forming a semiconductor, it is a system in which a coating/developing device of a semiconductor first development and a developing device is connected to an exposure device. (EUvdp + image is also required to mention the South. In this case, extreme ultraviolet exposure Vl〇let Lith〇graphy), electron beam projection exposure fh (Ejection Lithography) ^^^^^ (F2 ^ fat r) In the development of exposure technology, in addition, the existing ίί ^ or krypton fluoride (KrF) exposure technology is improved to improve the resolution, and a method of illuminating the liquid phase of light penetration is formed on the π ϋΐ surface (hereinafter : Liquid exposure") was also explored. In the semiconductor and manufacturing equipment industry, due to the financial level 2, this slave can extend the life of the ArF exposure device, use ArF to 45nm, and use it to try to be more advanced. The immersion exposure utilizes light to pass through, for example, an ultrapure water towel, so that ArF having a wavelength of 193 nm is substantially characterized by a wavelength of 134 nm due to a short wavelength of the water towel. The exposure device for performing the immersion exposure is briefly described using the ® 15 first. First, the support mechanism (not shown) supports the wafer in the horizontal state (for example, the wafer w). The front end portion of the exposure device 1 is disposed on the surface of the surface of the wafer, and the lens 1 is provided on the outer side of the lens. There are a supply port 11 for supplying a solution for forming a liquid layer on the surface of the wafer W, such as water, and a suction port 12 for sucking water supplied to the wafer W for recovery. 5 1270924 In this case, the surface of the W is supplied with water, and one film (water film) is recovered from the suction port 12 by one side. A liquid is formed on the wafer W from the light source fUt and the wafer surface, and the light that has passed through the lens 10 penetrates the liquid film, and the shading area 13 is drawn larger than the actual surface. The barrier procedure of exposure to immersion liquid has the following problems. That is, the spleen d' round treatment is performed in a clean room in which a descending air current is formed, but it is difficult to completely remove the particles of the photoresist. Here, for example, if the film is formed by granules and the liquid film is formed by the surface of the (10) solid, the surface is moved by ίΐίί. As described above, "the exposure device and the liquid film are only the wafer-S case. Therefore, even if the particle adhesion portion is undone, 丨>, 9 is prevented from being exposed during transfer. As a result, the y, y, and y may be transferred, so that the defective portion of the photoresist pattern is spread on the wafer. One problem with 汾φα, 八μ, and liquid exposure is that the photoresist is dissolved on the liquid film side to make if. In particular, after the end of the exposure, the wafer: liquid: the peripheral portion of the wafer has a sloped structure, and the possibility that the eluted component does not fall over the inclined surface of the peripheral portion is not low. Therefore, it is formed on the surface of the crystal κ, and the droplets of the liquid droplets are adsorbed by the liquid droplets. How, if, after the immersion liquid is exposed, the particles on the wafer may adhere to the slanting surface and directly remain, so that the particles are easy to be Adsorbed to the peripheral portion. The wafer may be exposed, especially in the peripheral portion thereof, when the particles are attached to the cloth or on the developing device side, the particles may adhere to the main cause of the transfer. Moreover, if there are particles adhering to the surface of the wafer, !27〇924 = the temperature of the attached impurity is the same as the temperature of other impurities, especially in the subtractive treatment of diffusion in the resistive photoresist.
，、 、J 心^上所述，進行浸液曝光時，_微_著有特別的問題。 • 巧題’於雜塗布後，浸液曝光前，及/或浸液曝光後、 =處_，以洗淨單元進行晶圓洗淨叫除微粒是有效的。於 该情形，由於在配置有塗布單元或顯影單元之稱為處理區塊 處观塊中，f要儘可缺縣的處理單元 ··f夕’以提局生產量’故’較佳為將洗淨單元配置於進行 處理區塊與曝光裝置之間連繫之界面區塊。 對晶圓進行之單元-般而言，係使用旋轉洗淨，如眾所知， 組5於塗布單元或顯影單元，邊將洗淨液對晶圓中央部供給 使晶圓旋轉，之後，進行甩開乾燥。 但是，該種乾燥裝置為將飛散的洗淨液回收，必需於載置上 述晶圓之台座下方侧跨越整個周邊設置形成有凹部的杯體。再 者，為將飛散的洗淨液確實地捕捉於杯體内而設置吸引妒置等 日^會使洗淨單元更大型化。因此，該種洗淨單元配^處理區 塊需ΐ的空間大’並不實際，而且，前述界面區塊中也需要儘可 鲁能地節省空間，很難採用此種配置大型洗淨單元的設計。 又’專利文獻1揭示-種裝置，使洗淨液從晶圓兩端部附近 上方吐出並於晶社流動後，自辦晶圓巾央部上方之吸引麵 將洗〉尹液與顯影液同時吸引以乾燥。但是，該種裝置中，從晶圓 端部也只有使職之洗淨液會流下。因此，必需以⑽晶圓:方 式設置上部侧開口之杯體，該杯體會妨礙裝置小型化。 k [〃專利文獻1 ]日本特開2004-95708號公報（第8〜9頁、第12 頁、第20頁） ' 【發明内容】 7 1270924 發明欲解決之 液曝情提供一種技術，於包含浸 =夜1=ίΓ除去在日日丄前 微=另同，礙塗布、 能以簡易構造進行晶圓洗^ 的為提供-種洗淨裝置， g決問題之方4 光後之半導體晶圓供給顯^液=3於其表面形成液層以浸液曝 其特徵為包括： 、〜 淨；洗手單兀’於半導體晶圓進行光阻塗布後浸液曝光前進行洗 喷嘴ϊ圓:部’使前述洗淨單元水平支持於半導體晶圓； 洗淨液吐出口，以面對支持於前述晶圓支持部之丰藤，曰 表面之方式形成，長度大致相當於固 吸引口，用於吸引從該洗淨液==二 轉；域機構’使B0il支持部相對於前述喷嘴部，触直轴線旋 移動機構’使喷嘴部於與面向支持於晶圓支 g表面的洗淨位置’與從半導體晶圓表面撤離之撤離位置之^ 月ΐ洗夜吐出Π」不限於狹縫狀之吐出口，尚包含 。並且，如果洗淨液吐出口比「s 大致相虽於料體曰曰回直徑」為長，只是來自吐出口之洗淨液會 8 1270924 晶圓當於半導體 浸液曝光，接著，對晶圓爰表===圓 行洗先、ΐΐϊ半Ϊ體晶圓進行光阻塗布後，於浸液曝光前進 置的ίί;使刚柄嘴部位於面向前述半導體晶圓表面之相對位 洗淨沿料導i日^吸引該洗淨液， 轉’亦可邊使例如晶圓^^轉邊 曝光後之半输0繼^==細彡細以浸液 ;:以圓浸液曝光後顯影前進行洗淨， ，圓支持部，支持使半導體晶圓水平； 旋轉機構’使該晶圓支持部繞鉛直軸線旋轉； 部的以包圍支持於前述晶圓支持部之半導體晶圓周緣 病S洗淨液吐出口及下側洗淨液吐出口，從該〕字型部之上 下部S=3導體晶圓的兩面周緣部吐出洗淨液； 下Ρ及引口為在刚迷]字型部下面部吸引洗淨液而設，若 9 1270924 側 =淨液^出口觀察，半導體晶圓中央部侧作為前方， 曰 從刖侧及兩側共二方包圍該下侧洗淨液吐出口· 側部吸引口，設於前述口型部之侧面部，用於吸引 罟盘2機構’使前述〕型部於包圍半導體晶圓周緣部之洗二 置〃攸该洗淨位置撤離之撤離位置間移動。 序位 =如^述i部可設置為使鮮導體晶圓直財向彼 為細述下=淨液吐出口以由半導體晶圓内側往外ί延!申 口之兩側可以具有沿該吐出口延伸之雜。下側冼乎液吐出 二種光阻圖案形成方法被實施，係使用前述 =於半導體關表面上進行光阻塗布後，於朴、，、置’ =液曝光’接著對晶圓表面供給顯影液以S 對+=日日圓浸祕光後，於顯影前進行洗淨之洗 括 其特徵為前述洗淨步驟包括： 使半導體晶圓水平支持於晶圓支持部之步驟· 古j著，使前述〕字型部相對定位，以使包圍支持於前述曰圓 支持部之半導體晶圓周緣部的步驟； 文賊月^曰圓 從設於動字型部之上側洗淨液吐出口及下側 於㈡ΐΐΐ體晶圓之兩面周緣部吐出洗淨液之步驟；/ 吐出口之吸引口及設於前述^字型 :月UW况甲液 液之步驟； 从魏·面部之吸引口，吸引洗淨 為使跨半導體晶圓整個周圍進行周綾 持部旋轉之步驟。又，前述光阻酵 //，使刚也曰圓支 吐出之方式。 使日日®邊連_轉’並使洗淨液 另一發明為一種塗布、顯影裝置 晶圓表面進行光阻塗布，及顯 布早凡’於+導體 曝光後之半導體晶圓供給顯影液去供給面形成液層以浸液 10 1270924 淨；包括洗淨單元，對半導體晶圓浸液曝光後，於顯影前進行洗 其特徵為前述洗淨單元包括： 晶圓支持部，使半導體晶圓支持水平； 噴嘴部，包括： ’ 晶, , , J, on the heart, when the immersion exposure, _ micro_ has a special problem. • It is effective to clean the wafer by the cleaning unit after the mis-coating, before the immersion liquid exposure, and/or after the immersion liquid exposure, and at the _. In this case, since it is in the processing block called the processing block where the coating unit or the developing unit is disposed, it is preferable that the processing unit of the county is required to take the amount of production. The cleaning unit is disposed in an interface block that connects the processing block to the exposure device. The unit for the wafer is generally subjected to spin cleaning, and as is known, the group 5 is applied to the center of the wafer to rotate the wafer while the coating unit or the developing unit is supplied, and then, Dry and dry. However, in such a drying apparatus, it is necessary to collect the scattered cleaning liquid, and it is necessary to provide a cup body having a concave portion formed over the entire periphery of the pedestal on which the wafer is placed. Further, in order to reliably capture the scattered washing liquid in the cup body, it is possible to provide a suction unit or the like to increase the size of the washing unit. Therefore, it is not practical for the cleaning unit to be equipped with a large space for processing the block. Moreover, the interface block needs to save space as much as possible, and it is difficult to adopt the design of the large-sized cleaning unit. . Further, in Patent Document 1, a device is disclosed in which a cleaning liquid is discharged from the vicinity of both end portions of a wafer and flows in a wafer shop, and the suction surface of the upper portion of the wafer towel is simultaneously supplied with the developer solution and the developer solution. Attracted to dry. However, in this type of device, only the cleaning liquid from the end of the wafer flows down. Therefore, it is necessary to provide a cup having an upper side opening in a (10) wafer: the cup body hinders the miniaturization of the apparatus. k [Patent Document 1] JP-A-2004-95708 (pages 8 to 9, page 12, page 20) ' [Summary of the Invention] 7 1270924 The liquid solution to be solved by the invention provides a technique for inclusion Dip = night 1 = Γ Γ 在 在 在 在 在 在 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = Supplying liquid = 3 forms a liquid layer on the surface thereof to expose the liquid to include: ～, 净; hand washing 兀 ' after the photoresist coating on the semiconductor wafer, the immersion liquid is exposed before the immersion liquid is exposed: part ' The cleaning unit is horizontally supported on the semiconductor wafer; the cleaning liquid discharge port is formed to face the surface of the vine supported by the wafer support portion, and the length is substantially equivalent to the solid suction port for attracting the suction The cleaning liquid == two revolutions; the domain mechanism 'brings the B0il support portion with respect to the nozzle portion, and touches the straight axis rotation mechanism 'to make the nozzle portion and the cleaning position facing the surface of the wafer support g' The evacuation position of the surface of the semiconductor wafer is removed from the moon. It is limited to the slit-shaped discharge port and is included. Moreover, if the washing liquid discharge port is longer than "s roughly the material roundabout diameter", only the washing liquid from the discharge port will be exposed to the semiconductor immersion liquid, and then the wafer is exposed.爰表=== Round row wash, ΐΐϊ Ϊ Ϊ 晶圆 进行 进行 进行 进行 进行 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光Guide i day ^ to attract the cleaning liquid, turn 'can be made, for example, after the wafer ^ ^ turn edge exposure half of the 0 = ^ = fine fine to immerse liquid;: after exposure to the round immersion liquid Washing, the circular support portion supports the level of the semiconductor wafer; the rotating mechanism 'rotates the wafer support portion around the vertical axis; the portion surrounds the semiconductor wafer peripheral disease S cleaning liquid supported by the wafer support portion The discharge port and the lower side of the cleaning liquid discharge port, and the cleaning liquid is discharged from the upper and lower sides of the upper portion S=3 of the conductor wafer; the lower jaw and the lead opening are in the lower part of the font portion. When the cleaning liquid is attracted, if the 9 1270924 side = the cleaning liquid exit, the center side of the semiconductor wafer is used as the front side. The 曰 包围 该 该 下 下 · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · The cleaning surrounding the peripheral portion of the semiconductor wafer moves between the evacuation positions of the cleaning position evacuation. The order position=============================================================================================== Extended miscellaneous. The second side of the liquid discharge method is formed by using the above-mentioned = photoresist coating on the semiconductor off-surface, and then applying liquid to the surface of the wafer. After the S is paired with the += Japanese yen, the cleaning is performed before the development. The cleaning step includes the steps of: supporting the semiconductor wafer horizontally on the wafer support portion. The character portion is relatively positioned so as to surround the peripheral portion of the semiconductor wafer supported by the round support portion; the thief is provided from the upper side of the movable portion and the lower side of the cleaning liquid discharge port and the lower side (2) The step of discharging the cleaning liquid on the peripheral portions of the two sides of the wafer; / the suction port of the discharge port and the step of the above-mentioned type: the UW condition of the liquid UW; from the suction port of the Wei face, the suction is The step of rotating the circumference of the semiconductor wafer across the periphery of the semiconductor wafer. In addition, the above-mentioned photo-resistance / /, the method of just throwing out the round branch. Make the day and the side of the _ turn 'and make another cleaning solution for the coating, development device wafer surface photoresist coating, and display the early semiconductor film after the + conductor exposure to the developer The supply surface forms a liquid layer to be immersed in liquid 10 1270924; and includes a cleaning unit that is exposed to the semiconductor wafer and then washed before development. The cleaning unit includes: a wafer support unit for supporting the semiconductor wafer Horizontal; nozzle section, including: 'crystal
^淨^出口，以面對於支持於前述晶圓支 囫表面之方式形成，長度大致相當於半導體晶圓直徑；牛^體 ，引口，用於吸引從該洗淨液吐出口吐出到半導體 口同?該洗淨液吐出口之兩側配置，長度與該：液W 旋轉機對前述喷嘴部，使晶圓支持部相對地繞錯 /子型部，設於前述喷嘴部之兩端部 於 圓支持部之半導體晶w職部的方式形成；_支持於則返晶 鬥夕Γ:ίί液吐出口，從該口字型部之下面部内側對半導沪曰 0之晨面周緣部吐出洗淨液； T干命體曰曰 吸引口，設於前述二字型部之侧面部，用以吸引洗 前述噴嘴部，於面向支持於晶圓支持部之半導 ^圓表 雜置與從半導體晶圓表面撤離之撤離位置之 前述塗布、顯影裝置可包括於前述j字 =吸引Π。以例如從前述下側洗淨液吐口 J面; =口二二σ之方式設置。此處’前述下側洗淨液吐 部吸引口可具有於該下側洗淨液吐出口兩側沿該吐出口延=: 位 砰琶又於彻案形成方法被實施，係使用前述塗布、顯影 + ¥體晶圓表面塗布光阻後，於辭導體晶圓表面 形成液層心液曝光，接著，對晶圓表面供給顯影液以進行顯影， 1270924 ^括洗〇驟☆對半導體晶圓進行浸液曝光後顯影前，進行洗 其特徵為前述洗淨步驟包括： 使巧體晶圓水平支持於晶岐 喷嘴ΪΪ端面向半導體晶圓並相對定位，使位於該 前述喷嘴部之洗淨液吐出口將洗淨液對半導 周緣面!^則將洗淨液對半導體晶圓裏面 液之步驟； 11、别述〕子u之側面部的吸引口吸引洗淨 及半ΐϊ 部依序旋轉’將於各旋轉位置之帶狀區域 疋轉又也可邊使例如晶圓連續的旋轉，邊吐出洗淨液。 如沿半導ΐΐ^ίΐ、Ϊ影裝置中，為以前述喷嘴部依序洗淨例 部間歇地曰亦门可控制旋轉機構使晶圓支持 „赌洗淨液吐出时出。再者，上述各塗布、娜裝置， 口吐出洗淨液 冼核吐出σ吐出。但是，也可邊使晶圓連續地旋轉， ★ π目士+ 、工山“幵有，上述各3 時使，以於從前述洗淨液吐出口吐出洗淨液 便貧為撕別迷晶圓支持部相對地於半導體1 布單元及4顯影裝置包括:處理區塊，包含例如前述塗 12 1270924 線方向來回移動之步驟。再去， 導體晶圓進行浸液曝光後，$ $阻^形^方法包括對半 步驟可於進行加熱步驟之前進^⑷丁加熱之步驟，前述洗淨 另一發明特徵為··於塗布光阻桌 以進行浸液曝光之曝光裝置中，設置上述=^面。上形成液層 發批概為：洗料勤上舰Λ元構成。 元洗淨，故能避光J液:以晶：以: 淨單si曰圓不會從晶圓表面灑落。因此，於該洗 =化月:期待早兀之令空間化，其結果能避免塗布、顯影裝置之大 =另-發明，係於浸液曝光後，洗淨晶圓周緣部，雖缺芦 ^曝光後，bSU周緣部殘留有液滴，為微粒容易附著能，、^ 1由將晶，緣部洗淨，能防止於浸液曝光後之步驟中i粒的 ，。而且，由以包圍晶圓周緣部之方式所形成〕字型部包Η勺 圓周緣部，從該〕字型部上面部將洗淨液 二 從侧面部吸引，同時，從前述口字型部下面部之下=;J、= 。對晶圓周緣部之背面侧吐出洗淨液，並以從三方包圍 之吸引口吸引，故洗淨液不會從晶圓表面及〕字型部灑落/ 公晶圓士持部的周圍不需要設置回收洗淨液之杯體，“待洗淨 早兀之省空間化’結果能避免塗布、顯影裝置之大型化。、， 又’依照另-發明，由於係於浸液曝光後 表面以料料洗淨，故即使浸液曝光後於晶圓表 產物，仍糾洗單元除去，可防止於浸祕光後之步驟產生的 13 1270924 且於===，:洗淨液不會從 微粒污染。而且 17字 字型部灑落， 圓表面灑落，而且，係使用以包圍晶圓周緣部之彳，π宵 型部進行洗淨液之吐出、吸引，故洗淨液不會從Χ形成的 同樣地，也可避免塗布、顯影裝置之大型化。 又，依照本發明之曝光裝置，由於設置上述 浸液曝光前及/或浸液曝光後洗淨晶圓，_免曝光於 早的構成 本發明之洗淨装置由於使用上述洗淨單元，故能為/ J、型且簡 【實施方式】 浸液以照光阻塗布後、 之塗布•顯影裝置連接於進行浸液曝光之$ 括可^哉山罢^片晶圓w之貨架2，設有：貨架站20，包 ^1^21 架载置部bi之後側，連接有悲體22 (處理區塊)B2，於該處理部β2之近侧起依序 系之單元多階化之3個棚架單元㈣ 搬送裝置A2、\Γ。、耶之各單元間用於晶圓界接驳的主 U1、U2、m e «。也就是說，從貨架載置部β1側起，棚架單元 成有晶圓前後排成一列，於各連接部位形 從-端側的棚竿=勘圖示)，使晶圓w可於處理區塊β2内 又，到另一端侧的棚架單元U3自由地移動。 分隔壁:由從ί2年=放置於以分隔壁23包圍的空間内，該 之Μ木载置部Β1觀察前後排成一列之棚架單元U1、 14 1270924 及構成= 側液處理單元陶5侧之-面部， 包ίίίLit隱成。又，圖中24為溫濕度調節單元， 等括口早70所使用處理液之溫度調節裝置或溫濕度調節用管路 刖述棚架單元m、U2、U3疊層複數層，例如1Q# 、U5處理之前處理及後處理的各種日單元= ϊ，晶圓w(洪烤)之加熱單元(PAB)(未圖示）、使曰圓w、i 部早70等。又，液處理單元U4、U5例如圖2所示二二 =顯影液等藥液收納部之上疊層複數 、及^ 攻以進行顯影處理之顯影單元(勝)28等所構成。4、、’p =處理部B2中，棚架單元ϋ3後侧透過界 ^接有曝光部Μ。該界面部Β3詳細地說，如圖3 =面^^ 部Β2與曝光部Β4之間前後之第丨搬送室3Α及第ς又^ S搬並第1晶圓搬送部31及第2晶圓搬送部至第1 並繞錯直軸、ί自^旋^ ΒθΚ搬_ 32包括f 32A ’可自由昇降 加再者’於第1搬送室3A，包夾第1晶圓搬送部31從眢加韵署 例如上下細方式設有=單元 UKS3)37，2個兩精度調溫單元(cpL2)39，各 衝卡 央部t ，從貨架載置部β1側觀察曰，於較中 兴口【偏左側5又有台座4，作為洗淨單元之晶圓 。 元係指與晶圓w之洗淨步驟相關的—群構成字早The net exit is formed in such a manner as to support the surface of the wafer support, and the length is substantially equivalent to the diameter of the semiconductor wafer; the inlet is used to attract the discharge from the discharge outlet of the cleaning liquid to the semiconductor port. The liquid washing machine is disposed on both sides of the washing liquid outlet, and the liquid W rotating machine is disposed on the nozzle portion, and the wafer supporting portion is wound around the wrong portion/sub-portion portion at both ends of the nozzle portion. Formed in the way of the semiconductor crystal w of the round support; _ support for the return of the crystal whistle: ίί liquid spit out, from the inside of the face below the face of the face to the semi-circumferential a cleaning liquid; a T-shaped body suction port is provided on a side portion of the two-shaped portion for sucking and washing the nozzle portion, and is arranged to face and support the semi-conducting surface of the wafer support portion The aforementioned coating and developing device for evacuating the surface of the semiconductor wafer surface may be included in the aforementioned j-character=attractive enthalpy. For example, it is provided from the above-mentioned lower side washing liquid discharge port J surface; Here, the lower side cleaning liquid discharge portion suction port may be formed on the both sides of the lower side cleaning liquid discharge port along the discharge port. Development + After the surface of the wafer is coated with photoresist, a liquid layer is exposed to the surface of the conductor wafer, and then the developer is supplied to the surface of the wafer for development. 1270924 ^ Washing step ☆ Performing on the semiconductor wafer Before the immersion liquid is exposed and developed, the cleaning step is characterized in that the cleaning step comprises: supporting the wafer to be horizontally supported on the semiconductor wafer at the crucible end and relatively positioned, so that the cleaning liquid located in the nozzle portion is spit. The outlet will wash the liquid to the semi-conductive peripheral surface! ^ The step of cleaning the liquid to the inside of the semiconductor wafer; 11. The other side of the sub-portion of the sub-portion attracts the cleaning and the semi-turned part rotates sequentially' The strip-shaped region at each of the rotational positions may be rotated or the washing liquid may be discharged while continuously rotating the wafer, for example. For example, in the case of a semi-conducting device, the nozzle portion is sequentially washed by the nozzle portion, and the door can be controlled by the Yemeni to control the rotation mechanism to cause the wafer to support the gambling liquid to be discharged. In each of the coating and sputum devices, the sputum is discharged from the sputum, and the sputum is discharged. However, the wafer can be continuously rotated. ★ π 士士+,工山“幵, the above 3 times, so as to The cleaning liquid discharge port discharges the cleaning liquid into a thin film support portion, and the semiconductor developing unit and the fourth developing device include a processing block including, for example, the step of moving the wire 12 1270924 in the direction of the line. Then, after the conductor wafer is subjected to the immersion exposure, the method of forming the resistance includes a step of heating the step (4) before the heating step, and the other invention is characterized by coating the light. In the exposure apparatus for performing the immersion exposure, the above-mentioned =^ surface is provided. Forming the liquid layer on the board is issued: the washing material is built on the ship. The yuan is washed, so it can avoid the J liquid: crystal: to: the net single si circle does not spill from the surface of the wafer. Therefore, in the washing and aging month, it is expected that the space will be increased as early as possible, and as a result, it is possible to avoid the large coating of the coating and developing device, and to invent the peripheral portion of the wafer after the immersion exposure, although the lack of reed ^ After the exposure, droplets remain on the peripheral edge of the bSU, and the particles are easily attached to the particles, and the crystals are washed away from the edges, thereby preventing the particles from being immersed in the step after the immersion exposure. Further, the peripheral portion of the font portion is formed so as to surround the peripheral portion of the wafer, and the cleaning liquid 2 is sucked from the side surface portion from the upper surface portion of the font portion, and the mouth portion is formed from the side portion. Below the lower part =; J, =. The cleaning liquid is discharged to the back side of the peripheral portion of the wafer, and is sucked by the suction port surrounded by the three sides. Therefore, the cleaning liquid does not need to be scattered from the wafer surface and the font portion/the area around the wafer holding portion. The cup body for recovering the washing liquid is provided, and the result of "storing the space to be washed early" can avoid the enlargement of the coating and developing device. Moreover, according to the other invention, the surface is coated after the immersion liquid is exposed. The material is washed, so even if the immersion liquid is exposed to the wafer surface product, the cleaning unit is removed, which can prevent the 13 1270924 and the === generated by the step after the immersion light, and the cleaning liquid does not pollute from the particles. In addition, the 17-word portion is sprinkled, and the round surface is sprinkled. Further, the π-shaped portion is used to surround the peripheral portion of the wafer, and the π-type portion is used to discharge and suck the cleaning liquid. Therefore, the cleaning liquid is not formed from the crucible. In addition, in the exposure apparatus according to the present invention, since the wafer is cleaned before the exposure of the immersion liquid and/or after the immersion liquid is exposed, the invention is constructed in an early manner. Since the cleaning device uses the above cleaning unit, It is / J, type and simple [Embodiment] After the immersion liquid is coated with the photoresist, the coating and developing device is connected to the shelf 2 for immersion exposure, and the shelf 2 is provided with: The shelf station 20, the rear side of the rack mounting unit bi, is connected with the sorrow 22 (processing block) B2, and the three sheds of the multi-stage unit in the order of the processing unit β2 Frame unit (4) The transport unit A2, \Γ., the main U1, U2, me « for the connection of the wafers between the units of the unit. That is, from the side of the shelf mounting portion β1, the scaffold unit is The wafers are arranged in a row in front and rear, and the slabs on the side-end side of each connection portion are formed, so that the wafer w can be freely moved in the processing block β2 and to the scaffolding unit U3 on the other end side. Separation wall: from the space of ί2=placed in the space surrounded by the partition wall 23, the rafter unit Β1 is arranged in a row before and after the scaffolding unit U1, 14 1270924 and the composition = side liquid processing unit pottery 5 Side-face, package ίίίLit hidden. In addition, 24 is the temperature and humidity adjustment unit, and the temperature adjustment device or temperature and humidity of the treatment liquid used in the early 70th The section of the scaffolding unit m, U2, and U3 is laminated with a plurality of layers, for example, 1Q#, U5, and various day units of the pre-treatment and post-processing, 晶圆, wafer w (baked) heating unit (PAB) ( In addition, the liquid processing units U4 and U5 are stacked on the chemical liquid storage unit such as the second and second developing solutions shown in FIG. The development unit (winning) 28 or the like is formed by the development process. 4. In the processing unit B2, the exposure unit 接 is connected to the rear side of the scaffold unit ϋ3. The interface unit Β3 is shown in detail in Fig. 3. = face ^^ The second transfer chamber 3Α and the second transfer between the first and second exposure portions 31 and the second wafer transfer unit to the first and second straight transfer axes,自 自 旋 Β Κ Κ Κ 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 37, two two-precision temperature control unit (cpL2) 39, each punching card central portion t, from the shelf mounting portion β1 side to observe 曰, in the relatively Zhongxingkou [left side 5 and pedestal 4, as a cleaning unit Wafer. The metasystem refers to the cleaning step associated with the wafer w.
在第2搬送室3B内設有該所有構成要素。該H 2搬送室3B内下部之旋轉機構的驅動機構41，設有 15 1270924 =轴部42。台座4由吸引吸附晶圓w背面側中 所構成，能於藉驅動機構以支持 2空夾頭 該台座4兼用為接敬台座，將晶旋轉。 到塗布、顯影裝置侧之臂32A。 之I 40接駁 從=載置部m側觀察，較台座4為左的方 向)’设有洗料7L之噴嘴部5。該喷嘴部 方 板51兩端之3字型部52、52構成，該 ^反1及扠於该頂All of the constituent elements are provided in the second transfer chamber 3B. The drive mechanism 41 of the rotation mechanism in the lower portion of the H 2 transfer chamber 3B is provided with 15 1270924 = shaft portion 42. The pedestal 4 is constituted by the back side of the suction-adsorbing wafer w, and can be supported by the driving mechanism. 2 The empty chuck The pedestal 4 is also used as a pedestal pedestal to rotate the crystal. The arm 32A on the coating and developing device side. The I 40 is connected to the nozzle portion 5 of the washing material 7L as viewed from the side of the mounting portion m, which is the left side of the pedestal 4). The three-shaped portions 52 and 52 at both ends of the nozzle portion plate 51 are formed.
座4，可於與該頂板51長邊方向垂直之方向水平g聽朝向台 並自;進:細側之臂4°可自由昇降、_軸線自由旋轉 接^，參相4〜圖7，說明構成洗淨單元—部份 及其周邊部位。喷嘴部5之頂板51如圖4所示，係 度較晶圓W直徑為長之帶狀板構成。 糾長邊方向長 圖5為從頂板51下面觀察之圖，沿頂板51中 向’以直線狀設有多數吐出孔53。該等吐出孔53群之兩端^^ ίίίΐ晶圓w之直徑長度大致相同，該等吐出孔53之各 仫為0.1mm〜3mm，更佳為〇· 5〜1麵。於本例，係由多數 53群形成洗淨液吐出口 54,但是洗淨液吐出口 54也可為盘 直徑長度大致相同之狹縫。洗淨液吐出口 54之兩側沿淨 口 54，分卿成狹縫狀吸引口 55、56，其長度與洗淨液 之長度大致相等。該吸引口 55、56之寬度較佳為〇. 〇5麵〜丨.〇咖， 更佳為5· 0〜1〇· 〇腿。又，洗淨液吐出口 54與吸引口 55、％之間 隔較佳為2· 0〜20· 0mm，更佳為5· 0〜10. 〇mm。 曰 圖6為圖4所示喷嘴部5中，將頂板51及口字型部52之下 面部切斷觀察到的縱剖面圖。洗淨液吐出口 54如圖β所示，透過 頂板51内之通路，於頂板51之長邊方向在中央部與洗淨液供^ 管54a連通’該洗淨液供給管54a透過閥54b連接於洗淨液供給 源54c。又，吸引口 55、56透過頂板51内之通路，與分別位於前 述洗淨液供給管54a雨侧之吸引管55a、56a連通，該等吸引管 16 1270924 = 等吸引機構 實際上，於中途往頂板51之長产 f條’（5計3條），但 出口 54、吸引σ 55或則I = 。’形成連通於洗淨液吐 頂板51之兩端部大致來說，為 下端往内似直角彎折，如果將f ^、請’並且’其 該喷嘴部5可說是於頂板51之兩_設置,^為f反5卜f 造，於本說明書對該鋪成進行朗。 W 52、52之構 52 t ί將晶圓W之中央部侧朽稱下面口P，攸17字型部52觀察， 左右方向中工ί主為=1’則以符號60表示之下面部之 左右之狹縫狀洗淨液吐出二f 例如長度為_ 大致麟之正下ί 61之後端條於晶圓w 以沿洗淨液吐出口 61，延伸目m兩=引口62 洗淨液吐出口 61相告於下而、…上 方式形成。 可為多數吐出孔排顺&方 =洗/液吐出σ，可為狹縫狀，亦 者如果能確實，可為連續的U字狀，或 通，吸引Π 62透過形成於連接單元63内之與前述通路Γ同: 17 1270924 路，與吸引管65連通。該等洗淨液供給管β4及 侧分別連接於圖6所示之洗淨液供給源 ^ 之基端 再者，於各增部52之側面=構 用以吸引晶圓W之上部側及下部側的、、条 2 考圖6)， 引管67與圖6所示吸引機構下^的^液’该吸引口 66透過吸 回到圖4的說明，喷嘴部$读讲辟# 構成之移動機構58，於洗淨晶圓W之洗淨===== 妨礙晶UW接駁之撤離位置間，以水平方^動、。、口庄4上不會 對上述貫施形態之作用，以晶圓W先、一The seat 4 can be horizontally g-oriented in the direction perpendicular to the longitudinal direction of the top plate 51 and can be moved from the front side; the arm of the thin side can be freely raised and lowered, the axis can be freely rotated, and the phase 4 to FIG. 7 Form the cleaning unit - part and its surrounding parts. As shown in Fig. 4, the top plate 51 of the nozzle unit 5 is formed of a strip-shaped plate having a longer diameter than the wafer W. Length of the lengthwise direction Fig. 5 is a view as seen from the lower side of the top plate 51, and a plurality of discharge holes 53 are provided in a straight line along the top plate 51. Both ends of the discharge holes 53 are substantially the same in diameter, and each of the discharge holes 53 has a diameter of 0.1 mm to 3 mm, more preferably 〇·5 to 1 face. In this example, the cleaning liquid discharge port 54 is formed by a plurality of 53 groups, but the cleaning liquid discharge port 54 may be a slit having substantially the same disk diameter. The sides of the washing liquid discharge port 54 are separated into the slit-like suction ports 55 and 56 along the clean port 54, and the length thereof is substantially equal to the length of the washing liquid. The width of the suction ports 55, 56 is preferably 〇. 〇 5 faces ~ 丨. 〇 ,, more preferably 5 · 0 ~ 1 〇 · 〇 legs. Further, the interval between the cleaning liquid discharge port 54 and the suction port 55, % is preferably 2·0 to 20·0 mm, more preferably 5·0 to 10. 〇mm. Fig. 6 is a longitudinal cross-sectional view showing the nozzle portion 5 of Fig. 4 as seen from the lower surface of the top plate 51 and the mouth-shaped portion 52. As shown in Fig. β, the cleaning liquid discharge port 54 communicates with the cleaning liquid supply pipe 54a at the center portion in the longitudinal direction of the top plate 51 through the passage in the top plate 51. The cleaning liquid supply pipe 54a is connected through the valve 54b. The cleaning liquid supply source 54c. Further, the suction ports 55 and 56 pass through the passages in the top plate 51 to communicate with the suction pipes 55a and 56a respectively located on the rain side of the cleaning liquid supply pipe 54a, and the suction pipes 16 1270924 = the suction mechanism is actually halfway. The top plate 51 has a length of 'f' (5 counts, 3), but the exit 54, attracts σ 55 or I = . 'The two end portions which are connected to the cleaning liquid ejection top plate 51 are substantially bent at right angles toward the lower end, and if f ^, please 'and' the nozzle portion 5 can be said to be the top plate 51 _ Set, ^ is f anti-5 b, made in this specification for the paving. The structure of W 52 and 52 is 52 t ί, the central portion of the wafer W is smothered as the lower port P, and the 攸 17-shaped portion 52 is observed. In the left and right direction, the work is =1, and the lower face is indicated by the symbol 60. The left and right slit-shaped washing liquid discharges two f. For example, the length is _, and the length is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The exit 61 is formed in the following manner. It can be a plurality of discharge holes, and can be a slit shape, or if it is true, it can be a continuous U-shape or a pass, and the suction Π 62 can be formed in the connection unit 63. It is the same as the aforementioned path: 17 1270924, which is connected to the suction pipe 65. The cleaning liquid supply pipe β4 and the side are respectively connected to the base end of the cleaning liquid supply source shown in FIG. 6, and the side surface of each of the additional portions 52 is configured to attract the upper side and the lower side of the wafer W. The side, the strip 2 is shown in Fig. 6), the lead pipe 67 and the suction mechanism of the suction mechanism shown in Fig. 6 are sucked back to the description of Fig. 4, and the nozzle portion is read. The mechanism 58 cleans the wafer W. ===== Prevents the crystal UW from being connected to the evacuation position, and moves horizontally. On the Kouzhuang 4, it will not affect the above-mentioned form of application.
F 進行浸液曝氺，目丨I兮a Pi i丨，人、口 所自兄明’對晶圓W 載置於台=上===+4()，_送(圖關 :附晶圓w之背面中央部，使r圓w水二。f座由4台上座2引 =二圖:⑹)，喷嘴部5藉由“機構二撤 為包圍晶圓w周緣部之壯字型部52成 出口 54成為*曰^古狀，占直線狀形成於頂板51之洗淨液吐 Ι-a，為/、日日回W直徑一致的狀態（圖8(c)及圖4)。 供給;2圓3=1之巧嫌吐出口 54將洗淨液(例如純水）， 55、56成為吸=能，使該洗淨液吐出σ 54之兩側吸引口 液吐出口 61對i t田而且’於口型部52 ’從下面部60之洗淨 吸引口 62 ?周緣部背面侧供給純水，並同時使下面部之 面及周緣部的洗、:Ρ吸引口 66成為吸引狀態’藉此開始晶圓界表 前。 尹。又，吸引的時點為較供給純水大致同時或稍 將頂板曰圓？表面洗淨之狀態，圖9為晶圓W洗淨時， 淨液吐出口切斷之概略縱斷正面圖，於頂板51，純水從洗 之表面與頂拓晶圓？表面吐出。吐出之純水邊充滿例如晶圓w 、、 下面之間，邊往洗淨液吐出口 54兩侧擴散。此 18 1270924 l === 口 55、56進行吸引，故純水會吸入吸引口 ⑽56,而不會從晶圓？上灑落。 部52如ΐίίί晶圓W周緣部洗淨之狀態，如㈣所示，於讀 之背面<吹送此^下^洗淨液吐出口 61將洗淨液往晶圓W周緣部 ί，tS到ΪΪ寞，型部52側面部之吸引口 66進行吸 口 66吸引。又ff、之洗淨液一部份會乘著其吸引流被該吸引 但是會於下舰部份落下到下方侧， ^字狀設置之吸引 :=::?圓¥周緣吐出並飛散之：=== 細’嫩也不· 方式對晶圓界進行洗淨，該洗淨步驟係如圖11(a)所 :二=動使=5沿水平的，切線方向邊 e2rir：" 對岸於智爽问梦私bZ的位置關係一例， 0於紅口私動耗圍’圖12中以虛線200表示的帶狀區域被洗 端3淨液吐出口 54及下側洗淨液吐出口 61之 ==曰0 w周=離’來自該等吐出口 54，之洗淨液分 π下面邛及上面部6吹出，但被側面部之吸引π 66月ΊΓ =()之吸引口 62吸人，不會從喷嘴部5灑落。=部6= 二：3〇ΤΤ液吐出口 54、61之移動區域的晶圓W中心角Θ ϋϊίΓΛ 限定於該角度。又，關於來回移動，可為= 刖物狀區域-邊之來回丨次方式，也可為來回2次‘古^ 如上所述，使晶圓w中之帶狀區域被洗淨，、” 54、61之移動區二;= 細地將晶圓W的帶狀區域洗淨。並且，將晶圓w依序子 19 ^27〇924 θ ’+將各仅置洗淨，於最後的角度位置的洗淨（圖11(c))完成後， 將嘴嘴部5從晶圓w撤離（圖11(d))，以界面部Β3之搬送部32 的臂從台座4接過晶圓W(圖11(e))，搬送到位於界面部Β3内進 行ΡΕΒ之單元。 _於圖中為求簡明，將晶圓W與頂板51之間放寬，但實際上其 間隔例如為〇· 5〜5mm左右，供給於晶圓W表面之洗淨液不會殘留 於其表面而會被吸引口 55、56所吸引，且晶圓W之周緣部背面侧 的洗淨液會被口型部52之側面部的吸引口 66所吸引，故晶圓w ^不會殘留液滴。又，本發明中，尚可以設置乾燥機構，與喷嘴 :5為一體或分開，對晶圓¥表面吹送乾燥氣體。乾燥機構可 於喷嘴部5之頂板51的吸引口 55、56兩侧，沿長邊方向 a 又置乾燥氣體供給口等之構成。 …上述實施形態，可將浸液曝光後之晶圓周緣部加以洗 LUfi曝光後，晶圓周緣部殘留有液滴，為微粒易附著 餘“ 晶圓周緣部，能於浸液曝光後之步驟防止 產tUi即使於晶圓表面殘留有浸液曝光時齡成 ί =除去，可於浸液糾後之步驟中，防止微粒Α又 ^曝，之晶圓w洗淨希望於顯影前 ^又’ 則 Ϊ於t前=例如不進行加熱之下進行晶圓貝 邊對ii 相徑之洗淨液吐出D 54 引洗淨液，故洗淨液不二兩:之，55、56吸 於吐出至晶圓w之周緣部的洗淨液會被 °骑_ ’由 吸引，故洗淨液也不會從〕型部52 ^p52之吸引口 62、66 置將洗淨液回收之杯體，能期待二二。因此，不需要在周圍設 洗淨單元之塗布、顯影裝置 變得大ί/匕。。因此，能防止包含該 U為較佳者，但也可使 20 1270924 噴嘴部5不來回移動而以例如小角度間隔使晶圓w間歇地旋轉， 於各角度位置將洗淨液吐出，或者以洗淨液不會灑落程度之慢旋 轉速度，邊使晶圓W連續地旋轉，邊吐出洗淨液。 办又，於口型部52中，可將下面部60與晶圓w之間的距離變 乍使洗淨液充滿該間隙’也可使間隙擴大，使洗淨液與下面部 60之間形成空間，以使洗淨液能飛散。於該等情形中，使吸引口 配置於使洗淨液不往下落而能確實地被吸引是重要的。從此點看 來，如果如實施形態，將下側洗淨液吐出口 61之三方以吸引口 62 包圍，並於側面部設置吸引口 66，則如作用説明所詳述，能確實 _ 地吸引從該吐出口 61所吐出之洗淨液，故為較佳構成。 ^又，亦可著重於浸液曝光後，於晶圓W之周緣部微粒容易附 ，之情形，不對晶圓w表面加以洗淨，而使用僅诜淨晶圓w周緣 部之洗淨單元。於此情形中，可為例如圖14所示，彼此相向的相 同構造的型部71、72各藉由移動機構73、74水平移動。於：7 型部71、72之下面側及側面側，可與圖4所示實施形態為相同構 成，也可為上面部與例如下面部為相同的構成，也可僅設置對晶 ，W周緣部表面吐出洗淨液之洗淨液吐出口而不設置吸引口。於 該構成中，上面部侧之洗淨液吐出口相當於本發明所稱上側洗淨 液吐出口。 ® 再者，於本發明中，於例如界面部B3可設置洗淨單元，於進 行〉s:液曝光前對晶圓W進行洗淨。於此情形，可使用與圖4所示 構造為相同構造之噴嘴部5，與之前的實施形態為相同構成，但由 於液曝光前，尤其是晶圓W表面之洗淨是重要的，故可從圖4 所不喷嘴部5除去3型部52之構成。於此情形，雖依吸引口之吸 ‘ 引^會有差別，但例如以不使喷嘴部5來回移動，而使晶圓w以 ，或·地旋轉之方式在由吸引p確實地吸引洗淨液之觀點為 較佳的。或者，可於圖4所示噴嘴部5中，除去口型部52下面侧 之洗淨液吐出口 61及吸引口 β2。 圖13中，顯示圖1及圖2所示之前的實施形態中，設有洗淨 21 1270924 座81兼用為接駁台座：、^^鳴β 83等所構成 到曝光部_之搬送部^臂===搬送部32之臂接 =動猶糊^之洗繼與從繼 = 動 4 ' ίϊί；；；^^ ，小型化及簡單構造之效果。並^，具有 到既述的^ ^而雜曝光部β4側，於此情形，也可得 【圖式簡單說明】 圖1係顯示依本發明一實施形態之塗布、 圖 體圖 2係顯示依本發明一實施形熊 顯影裝置的平面圖 之塗布、顯影裝置的整體立 • : 於之f面部的立體圖。 嘴部之立_。03於上讀布、顯影裝置之洗淨單元的喷 S 嘴部中頂板-例之底視圖。 圖6係顯不上述贺嘴部之縱剖面圖。 述噴嘴部中之口型部之横斷平面圖。 圖 回a〜（）係顯不洗淨前，上述喷嘴部及晶圓之動態的説明 顯示洗淨時，上述噴嘴部之縱剖面圖。 回a)〜（b)係顯不洗淨時，上述噴嘴部之侧面圖 22 1270924 圖11(a)〜（e)係顯示洗淨開始到洗淨結束後，上述喷嘴部及 晶圓之動態的説明圖。 圖12係顯示上述喷嘴部中之口型部之洗淨區域的説明圖。 圖13係顯示本發明另一實施形態之光阻圖案形成裝置的洗淨 單元的立體圖。 圖14係顯示本發明另一實施形態之光阻圖案形成裝置之洗淨 單元的立體圖。 圖15係顯示用以將晶圓進行浸液曝光之曝光裝置的説明圖。 圖16係顯示以上述曝光裝置將晶圓表面浸液曝光之狀態的説 I 明圖。 【主要元件符號說明】 A1接驳裝置 A2 主搬送裝置 A3主搬送裝置 B1貨架載置部 B2處理部 B3界面部（界面區塊） B4曝光部B4 • U1棚架單元 U2棚架單元 U3棚架單元 U4液處理單元 U5液處理單元 _ W 晶圓 1 曝光裝置 10透鏡 11供給口 12吸引口 1270924 13轉印區域（照射區域） 2 貨架 20貨架站 20a載置部 21開閉部 22框體 23分隔壁 24溫濕度調節單元 26抗反射膜塗布單元(BARC) 27光阻塗布單元(COT) 28顯影單元(DEV) 200虛線 3A 第1搬送室 3B 第2搬送室 31第1晶圓搬送部 31A臂 31B臂 32第2晶圓搬送部 32A臂 32B臂 34緩衝卡匣（SBU) 35緩衝卡匣（SBU) 37接駁單元(TRS3) 38冷卻單元(PEB) 39高精度調溫單元(CPL2) 4 台座 40臂 41 驅動機構 42軸部 24 1270924 喷嘴部 頂板 ：7型部 吐出孑L 洗淨液吐出口 洗淨液供給管 閥 參 洗淨液供給源 吸引口 吸引管 閥 吸引機構 吸引口 吸引管 臂 移動機構 下面部 洗淨液吐出口 吸引口 連接單元 洗淨液供給管 吸引管 吸引口 吸引管 :?型部 ：7型部 移動機構 移動機構 台座 1270924 82驅動機構 83喷嘴部F immersion exposure, witnessed I兮a Pi i丨, person, mouth from the brother Ming 'on the wafer W placed on the table = above === +4 (), _ send (Figure off: attached crystal The center of the back of the circle w, so that the r circle w water two. The f seat is composed of four upper seats 2 = two diagrams: (6)), the nozzle portion 5 is removed by the mechanism two to surround the peripheral portion of the wafer w. The 52 outlets 54 are in an ancient shape, and the washing liquid spout-a which is formed linearly on the top plate 51 is in a state in which the diameters of the W and the day W are the same (Fig. 8(c) and Fig. 4). 2 round 3 = 1 smudged sputum outlet 54 will be a cleaning solution (such as pure water), 55, 56 become suction = energy, so that the washing liquid spits out σ 54 on both sides of the suction liquid discharge outlet 61 to the field Further, the 'mouth portion 52' supplies pure water from the washing suction port 62 of the lower surface portion 60 and the back surface side of the peripheral portion, and at the same time, the washing of the lower surface and the peripheral portion is made to be in a suction state. This starts before the wafer boundary table. Yin. Also, the time of attraction is the state in which the surface of the top plate is rounded and the surface is washed at the same time or slightly. FIG. 9 is the state in which the wafer W is washed, and the clean liquid is discharged. A rough longitudinal view of the broken front, on the top plate 51, pure water The surface of the wash and the top of the wafer are spit out. The pure water side of the spout is filled, for example, between the wafer w and the lower side, and spreads to the sides of the washing liquid discharge port 54. This 18 1270924 l === port 55, 56 is attracted, so pure water will be sucked into the suction port (10) 56, and will not be spilled from the wafer. The portion 52 is cleaned by the peripheral edge of the wafer W, as shown in (4), on the back of the reading < blowing this The lower cleaning liquid discharge port 61 sucks the cleaning liquid toward the peripheral edge portion ί, tS of the wafer W, and the suction port 66 of the side portion of the mold portion 52 sucks the suction port 66. Further, part of the cleaning liquid is ff. It will be attracted by the attraction stream but will fall to the lower side of the lower part of the ship. The attraction of the word shape is set: =::? The circle ¥ spit out and scatters: === fine 'nature neither way Washing the wafer boundary, the cleaning step is as shown in Fig. 11(a): 2 = moving = 5 along the horizontal, tangential direction e2rir: " An example of the positional relationship between the opposite side and the smart , 0 in the red mouth private consumption consumption 'the strip-shaped area indicated by the broken line 200 in Fig. 12 is washed end 3 clean liquid discharge port 54 and lower side washing liquid discharge port 61 == 曰 0 w = from the discharge port 54, the washing liquid is divided into the lower surface 邛 and the upper surface portion 6 is blown out, but is sucked by the suction port 62 of the suction portion of the side portion π 66月ΊΓ = (), and does not suck from the nozzle portion 5 Sprinkle. = Part 6 = 2: The center angle 晶圆 ϋϊίΓΛ of the wafer W in the moving area of the sputum discharge outlets 54, 61 is limited to this angle. Also, regarding the back and forth movement, it can be = 刖 状 区域 - - In this case, it is also possible to make two rounds of 'green' as described above, so that the strip-shaped area in the wafer w is washed, "54, 61 moving area 2; = finely strip the wafer W Wash the area. Further, the wafers w are individually washed by 19 ^ 27 〇 924 θ '+, and after the cleaning at the final angular position (Fig. 11 (c)) is completed, the nozzle portion 5 is removed from the wafer. w evacuation (Fig. 11 (d)), the wafer W is transported from the pedestal 4 by the arm of the transport unit 32 of the interface unit 3 (Fig. 11(e)), and is transported to the unit located in the interface unit Β3. _ In the figure, for the sake of simplicity, the wafer W and the top plate 51 are relaxed, but the interval is, for example, about 5 to 5 mm, and the cleaning liquid supplied to the surface of the wafer W does not remain on the surface. The suction liquids 55 and 56 are attracted by the suction ports 55 and 56, and the cleaning liquid on the back side of the peripheral portion of the wafer W is attracted by the suction port 66 on the side surface portion of the mouth portion 52, so that the wafer w does not remain. Further, in the present invention, a drying mechanism may be provided, and the nozzle: 5 may be integrated or separated to blow dry gas to the surface of the wafer. The drying mechanism may be configured such that a dry gas supply port or the like is provided along both sides of the suction ports 55 and 56 of the top plate 51 of the nozzle unit 5 in the longitudinal direction a. In the above embodiment, after the immersion liquid is exposed, the peripheral edge portion of the wafer is exposed to LUfi, and the liquid droplets remain on the peripheral edge portion of the wafer, so that the particles are easily adhered to the "wafer peripheral portion, which can be exposed after immersion exposure. Prevent the production of tUi even if there is residual immersion liquid on the surface of the wafer. When it is removed, it can be prevented in the step of immersion correction, and the wafer w is washed and hoped to be cleaned before development. Then, before t, for example, if the wafer is not heated, the wafer is immersed in the cleaning liquid of the ii phase, and the cleaning liquid is discharged. Therefore, the cleaning liquid is not two or two: 55, 56 is sucked to the discharge. The cleaning liquid in the peripheral portion of the wafer w is trapped by the rider, so that the cleaning liquid does not pass from the suction ports 62 and 66 of the type portion 52^p52, and the cup is recovered. Therefore, it is not necessary to provide a coating unit around the cleaning unit, and the developing device becomes large. Therefore, it is possible to prevent the inclusion of the U as a preferable one, but it is also possible to prevent the nozzle portion 5 of the 20 1270924 from going back and forth. Moving, the wafer w is intermittently rotated at a small angular interval, for example, and the cleaning liquid is discharged at each angular position, or washed. The liquid does not sprinkle to a slow rotation speed, and the wafer W is continuously rotated to discharge the cleaning liquid. Further, in the lip portion 52, the distance between the lower portion 60 and the wafer w can be changed. When the cleaning liquid is filled in the gap, the gap can be enlarged, and a space can be formed between the cleaning liquid and the lower surface portion 60 to allow the cleaning liquid to scatter. In these cases, the suction port is disposed in the cleaning liquid. It is important that it can be surely attracted without falling. From this point of view, in the embodiment, the three sides of the lower cleaning liquid discharge port 61 are surrounded by the suction port 62, and the suction port 66 is provided on the side surface portion. As described in detail in the description of the operation, it is possible to surely attract the cleaning liquid discharged from the discharge port 61. Therefore, it is preferable to use a fine structure in the peripheral portion of the wafer W after the immersion exposure. In the case where it is easy to attach, the surface of the wafer w is not washed, and a cleaning unit that cleans only the peripheral portion of the wafer w is used. In this case, for example, the same structure as that shown in Fig. 14 may be used. The portions 71, 72 are each moved horizontally by the moving mechanisms 73, 74. In: Type 7 portions 71, 72 The lower side and the side surface side may be configured in the same manner as the embodiment shown in Fig. 4, or the upper surface portion may be the same as the lower surface portion, for example, or only the crystal may be provided, and the washing liquid may be discharged from the surface of the peripheral portion of the W portion. In this configuration, the washing liquid discharge port on the upper surface side corresponds to the upper side washing liquid discharge port of the present invention. Further, in the present invention, for example, the interface portion B3 may be provided with a cleaning unit for cleaning the wafer W before the exposure of the liquid: s: liquid. In this case, the nozzle portion 5 having the same structure as that shown in Fig. 4 can be used, which is the same as the previous embodiment. However, since the cleaning of the surface of the wafer W is important before the liquid exposure, the configuration of the 3-type portion 52 can be removed from the nozzle portion 5 of Fig. 4 . In this case, although there is a difference in the suction of the suction port, for example, the wafer w is reliably sucked and washed by the suction p so as not to move the nozzle portion 5 back and forth. The liquid viewpoint is preferred. Alternatively, in the nozzle portion 5 shown in Fig. 4, the cleaning liquid discharge port 61 and the suction port β2 on the lower surface side of the lip portion 52 may be removed. In the embodiment shown in Fig. 1 and Fig. 2, the washing unit 21 1270924 is used as the connecting base: ===The arm of the transport unit 32 = the movement of the brakes and the follow-up = move 4 ' ίϊί;;; ^^, the effect of miniaturization and simple construction. And ^ has the same as the above-mentioned ^ ^ and the exposed portion β4 side, in this case, can also be obtained [simplified description of the drawings] Figure 1 shows a coating according to an embodiment of the present invention, Figure 2 shows The coating of the plan view of the bear developing device of the present invention and the overall configuration of the developing device are as follows: a perspective view of the face. The standing of the mouth _. 03. The top view of the top plate in the spray nozzle of the cleaning unit of the upper reading cloth and the developing device. Fig. 6 is a longitudinal sectional view showing the above-mentioned mouthpiece portion. A transverse plan view of the lip portion in the nozzle portion. Fig. a to () shows the dynamics of the nozzle portion and the wafer before the cleaning is performed. The vertical cross-sectional view of the nozzle portion at the time of cleaning is shown. When a) to (b) are not cleaned, the side of the nozzle portion is shown in Fig. 22, 1270924. Figs. 11(a) to (e) show the dynamics of the nozzle portion and the wafer after the cleaning is started until the cleaning is completed. Illustration of the diagram. Fig. 12 is an explanatory view showing a washing area of the mouth portion in the nozzle portion. Figure 13 is a perspective view showing a cleaning unit of a photoresist pattern forming apparatus according to another embodiment of the present invention. Figure 14 is a perspective view showing a cleaning unit of a photoresist pattern forming apparatus according to another embodiment of the present invention. Fig. 15 is an explanatory view showing an exposure apparatus for immersing a wafer in liquid exposure. Fig. 16 is a view showing a state in which the surface of the wafer is immersed in exposure by the above exposure apparatus. [Description of main component symbols] A1 connection device A2 Main transfer device A3 Main transfer device B1 Shelf mounting portion B2 Processing portion B3 Interface portion (interface block) B4 Exposure portion B4 • U1 scaffolding unit U2 Scaffolding unit U3 Scaffolding Unit U4 Liquid processing unit U5 Liquid processing unit_W Wafer 1 Exposure device 10 Lens 11 Supply port 12 Suction port 1270924 13 Transfer area (irradiation area) 2 Shelf 20 Shelf station 20a Mounting part 21 Opening and closing part 22 Frame 23 Partition 24 Temperature and Humidity Adjustment Unit 26 Anti-Reflection Film Coating Unit (BARC) 27 Photoresist Coating Unit (COT) 28 Development Unit (DEV) 200 Dotted Line 3A First Transfer Room 3B Second Transfer Room 31 First Wafer Transfer Unit 31A Arm 31B arm 32 second wafer transfer unit 32A arm 32B arm 34 buffer cassette (SBU) 35 buffer card (SBU) 37 connection unit (TRS3) 38 cooling unit (PEB) 39 high-precision temperature adjustment unit (CPL2) 4 Base 40 arm 41 Drive mechanism 42 Shaft 24 1270924 Nozzle top plate: 7-type discharge 孑L Washing liquid venting outlet cleaning liquid supply pipe valve ginning liquid supply source suction port suction pipe valve suction mechanism suction port suction pipe arm Moving body below the washing liquid discharge Suction port Connection unit Cleaning liquid supply pipe Suction pipe Suction port Suction tube : ? Type part : 7 type part Moving mechanism Movement mechanism pedestal 1270924 82 drive mechanism 83 nozzle part