WO2003028111A1 - Memoire a semi-conducteur permanente et procede de fabrication - Google Patents

Memoire a semi-conducteur permanente et procede de fabrication Download PDF

Info

Publication number
WO2003028111A1
WO2003028111A1 PCT/JP2002/009857 JP0209857W WO03028111A1 WO 2003028111 A1 WO2003028111 A1 WO 2003028111A1 JP 0209857 W JP0209857 W JP 0209857W WO 03028111 A1 WO03028111 A1 WO 03028111A1
Authority
WO
WIPO (PCT)
Prior art keywords
source
drain regions
voltage
sbl
charge accumulation
Prior art date
Application number
PCT/JP2002/009857
Other languages
English (en)
French (fr)
Inventor
Ichiro Fujiwara
Hiromi Nobukata
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to US10/432,158 priority Critical patent/US6903977B2/en
Priority to DE10295303.1T priority patent/DE10295303B4/de
Priority to JP2003531535A priority patent/JP4114607B2/ja
Publication of WO2003028111A1 publication Critical patent/WO2003028111A1/ja
Priority to US11/079,300 priority patent/US7102931B2/en
Priority to US11/096,017 priority patent/US7142451B2/en
Priority to US11/095,798 priority patent/US7088622B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
PCT/JP2002/009857 2001-09-25 2002-09-25 Memoire a semi-conducteur permanente et procede de fabrication WO2003028111A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/432,158 US6903977B2 (en) 2001-09-25 2002-09-25 Nonvolatile semiconductor memory device and method of producing the same
DE10295303.1T DE10295303B4 (de) 2001-09-25 2002-09-25 Nichtflüchtige Halbleiterspeichervorrichtung mit Ladungsspeicherfilm und Speicherperipherieschaltungen, Verfahren zu deren Betrieb und Verfahren zu deren Herstellung
JP2003531535A JP4114607B2 (ja) 2001-09-25 2002-09-25 不揮発性半導体メモリ装置及びその動作方法
US11/079,300 US7102931B2 (en) 2001-09-25 2005-03-15 Nonvolatile semiconductor memory apparatus and method of producing the same
US11/096,017 US7142451B2 (en) 2001-09-25 2005-04-01 Nonvolatile semiconductor memory apparatus and method of producing the same
US11/095,798 US7088622B2 (en) 2001-09-25 2005-04-01 Nonvolatile semiconductor memory apparatus and method of producing the same

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2001-291759 2001-09-25
JP2001291759 2001-09-25
JP2002044309 2002-02-21
JP2002-44309 2002-02-21
JP2002046998 2002-02-22
JP2002-46998 2002-02-22
JP2002-188809 2002-06-27
JP2002188809 2002-06-27

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US10432158 A-371-Of-International 2002-09-25
US11/079,300 Continuation US7102931B2 (en) 2001-09-25 2005-03-15 Nonvolatile semiconductor memory apparatus and method of producing the same
US11/095,798 Continuation US7088622B2 (en) 2001-09-25 2005-04-01 Nonvolatile semiconductor memory apparatus and method of producing the same
US11/096,017 Continuation US7142451B2 (en) 2001-09-25 2005-04-01 Nonvolatile semiconductor memory apparatus and method of producing the same

Publications (1)

Publication Number Publication Date
WO2003028111A1 true WO2003028111A1 (fr) 2003-04-03

Family

ID=27482578

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009857 WO2003028111A1 (fr) 2001-09-25 2002-09-25 Memoire a semi-conducteur permanente et procede de fabrication

Country Status (5)

Country Link
US (5) US6903977B2 (ja)
JP (1) JP4114607B2 (ja)
DE (1) DE10295303B4 (ja)
TW (1) TW561617B (ja)
WO (1) WO2003028111A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
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JP2004343014A (ja) * 2003-05-19 2004-12-02 Sharp Corp 半導体記憶装置、半導体装置、及びそれらの製造方法、並びに携帯電子機器、並びにｉｃカード
JP2004349308A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
JP2004349311A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
JP2005317117A (ja) * 2004-04-28 2005-11-10 Sony Corp 不揮発性半導体メモリ装置の動作方法、および、不揮発性半導体メモリ装置
JP2007142398A (ja) * 2005-11-17 2007-06-07 Ememory Technology Inc 単層ポリシリコン不揮発性メモリーセルの駆動方法
JP2007534157A (ja) * 2003-11-04 2007-11-22 マイクロン テクノロジー、インコーポレイテッド 自己整合型電荷分離構造ｎｒｏｍフラッシュメモリ
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP2009157975A (ja) * 2007-12-25 2009-07-16 Spansion Llc 半導体装置およびその制御方法
JP2010016067A (ja) * 2008-07-01 2010-01-21 Sony Corp 不揮発性半導体メモリデバイス、その製造方法および動作方法
JP2011100533A (ja) * 2009-11-05 2011-05-19 Fs Semiconductor Corp Ltd フラッシュｅｐｒｏｍの閾値電圧降下方法及びその構造
JP2013191885A (ja) * 2013-06-18 2013-09-26 Renesas Electronics Corp 不揮発性半導体記憶装置
WO2023105763A1 (ja) * 2021-12-10 2023-06-15 キオクシア株式会社 メモリデバイス

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US7202523B2 (en) * 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
JP4419699B2 (ja) * 2004-06-16 2010-02-24 ソニー株式会社 不揮発性半導体メモリ装置およびその動作方法
US20080203464A1 (en) * 2004-07-01 2008-08-28 Chih-Hsin Wang Electrically alterable non-volatile memory and array
US7881123B2 (en) * 2005-09-23 2011-02-01 Macronix International Co., Ltd. Multi-operation mode nonvolatile memory
JP2007193867A (ja) * 2006-01-17 2007-08-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその書き換え方法
US20070177428A1 (en) * 2006-01-30 2007-08-02 Zeev Cohen Memory circuit arrangement and method for reading and/or verifying the status of memory cells of a memory cell array
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JP5088465B2 (ja) 2006-07-12 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリ
US7369446B2 (en) * 2006-07-13 2008-05-06 Atmel Corporation Method and apparatus to prevent high voltage supply degradation for high-voltage latches of a non-volatile memory
JP4241780B2 (ja) * 2006-08-09 2009-03-18 シャープ株式会社 半導体記憶装置及び電子機器
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JP5166095B2 (ja) * 2008-03-31 2013-03-21 株式会社東芝 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置
JP5300773B2 (ja) * 2010-03-29 2013-09-25 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP5702109B2 (ja) * 2010-10-20 2015-04-15 ラピスセミコンダクタ株式会社 半導体メモリ
JP5667893B2 (ja) * 2011-01-20 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN104183490B (zh) * 2013-05-21 2017-11-28 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
TWI566249B (zh) * 2014-11-21 2017-01-11 慧榮科技股份有限公司 快閃記憶體的資料寫入方法與其控制裝置
US9698147B2 (en) 2015-02-25 2017-07-04 Sii Semiconductor Corporation Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004343014A (ja) * 2003-05-19 2004-12-02 Sharp Corp 半導体記憶装置、半導体装置、及びそれらの製造方法、並びに携帯電子機器、並びにｉｃカード
JP2004349308A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
JP2004349311A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
JP4480955B2 (ja) * 2003-05-20 2010-06-16 シャープ株式会社 半導体記憶装置
JP2007534157A (ja) * 2003-11-04 2007-11-22 マイクロン テクノロジー、インコーポレイテッド 自己整合型電荷分離構造ｎｒｏｍフラッシュメモリ
JP2005317117A (ja) * 2004-04-28 2005-11-10 Sony Corp 不揮発性半導体メモリ装置の動作方法、および、不揮発性半導体メモリ装置
JP2007142398A (ja) * 2005-11-17 2007-06-07 Ememory Technology Inc 単層ポリシリコン不揮発性メモリーセルの駆動方法
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP2009157975A (ja) * 2007-12-25 2009-07-16 Spansion Llc 半導体装置およびその制御方法
JP2010016067A (ja) * 2008-07-01 2010-01-21 Sony Corp 不揮発性半導体メモリデバイス、その製造方法および動作方法
JP2011100533A (ja) * 2009-11-05 2011-05-19 Fs Semiconductor Corp Ltd フラッシュｅｐｒｏｍの閾値電圧降下方法及びその構造
JP2013191885A (ja) * 2013-06-18 2013-09-26 Renesas Electronics Corp 不揮発性半導体記憶装置
WO2023105763A1 (ja) * 2021-12-10 2023-06-15 キオクシア株式会社 メモリデバイス

Also Published As

Publication number Publication date
US7088622B2 (en) 2006-08-08
US20050201189A1 (en) 2005-09-15
JP4114607B2 (ja) 2008-07-09
DE10295303T5 (de) 2004-09-23
US7102931B2 (en) 2006-09-05
DE10295303B4 (de) 2017-07-13
JPWO2003028111A1 (ja) 2005-01-13
US20050152187A1 (en) 2005-07-14
US20050185499A1 (en) 2005-08-25
US20040042295A1 (en) 2004-03-04
US6903977B2 (en) 2005-06-07
US7142451B2 (en) 2006-11-28
US7145808B2 (en) 2006-12-05
TW561617B (en) 2003-11-11
US20050169085A1 (en) 2005-08-04

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