WO2002001603A3 - Transistor a couches minces de type grille inferieure, son procede de fabrication et dispositif d'affichage a cristaux liquides utilisant ce transistor - Google Patents

Transistor a couches minces de type grille inferieure, son procede de fabrication et dispositif d'affichage a cristaux liquides utilisant ce transistor Download PDF

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Publication number
WO2002001603A3
WO2002001603A3 PCT/EP2001/007189 EP0107189W WO0201603A3 WO 2002001603 A3 WO2002001603 A3 WO 2002001603A3 EP 0107189 W EP0107189 W EP 0107189W WO 0201603 A3 WO0201603 A3 WO 0201603A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
thin film
drain electrodes
type thin
film transistor
Prior art date
Application number
PCT/EP2001/007189
Other languages
English (en)
Other versions
WO2002001603A2 (fr
Inventor
Teizo Yukawa
Original Assignee
Koninkl Philips Electronics Nv
Teizo Yukawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Teizo Yukawa filed Critical Koninkl Philips Electronics Nv
Priority to KR1020027002269A priority Critical patent/KR20020062276A/ko
Priority to EP01965033A priority patent/EP1297568A2/fr
Publication of WO2002001603A2 publication Critical patent/WO2002001603A2/fr
Publication of WO2002001603A3 publication Critical patent/WO2002001603A3/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Cette invention concerne un transistor ¿ couches minces de type grille inf¿rieure et un proc¿d¿ de fabrication de celui-ci susceptible de r¿duire les charges indirectes de son processus de fabrication et donc de donner lieu ¿ une r¿duction du co¿t de fabrication. Un transistor ¿ couches minces comprend une couche de base (1), une ¿lectrode de grille (2), une couche isolante de grille (3), une ¿lectrode source (4) et une ¿lectrode de drain (5), dispos¿es dans cet ordre. Le transistor pr¿sente une couche canal semiconductrice (6) se trouvant en contact d'une part avec une partie de la couche isolante de grille situ¿e entre l'¿lectrode source (4) et l'¿lectrode de drain (5), et d'autre part avec les extr¿mit¿s de l'¿lectrode source (4) et de l'¿lectrode de drain (5) respectivement oppos¿es entre elles. Cette couche canal semiconductrice est par ailleurs con¿ue pour ¿tre associ¿e ¿ l'¿lectrode de grille (2) et est dispos¿e de mani¿re ¿ constituer un pont entre lextr¿mit¿s en opposition situ¿es sur la face sup¿rieure de l'¿lectrode source (4) et l'¿lectrode de drain (5). Les parties (6c) de la couche canal (6) en contact avec l'¿lectrode source (4) et l'¿lectrode de drain (5) forment des couches ext¿rieures de contact ohmique.
PCT/EP2001/007189 2000-06-26 2001-06-25 Transistor a couches minces de type grille inferieure, son procede de fabrication et dispositif d'affichage a cristaux liquides utilisant ce transistor WO2002001603A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020027002269A KR20020062276A (ko) 2000-06-26 2001-06-25 하부 게이트 타입 박막 트랜지스터, 그 제조 방법 및 이를사용한 액정 디스플레이 디바이스
EP01965033A EP1297568A2 (fr) 2000-06-26 2001-06-25 Transistor a couches minces de type grille inferieure, son procede de fabrication et dispositif d'affichage a cristaux liquides utilisant ce transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000190765A JP2002026326A (ja) 2000-06-26 2000-06-26 ボトムゲート形薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置
JP2000-190765 2000-06-26

Publications (2)

Publication Number Publication Date
WO2002001603A2 WO2002001603A2 (fr) 2002-01-03
WO2002001603A3 true WO2002001603A3 (fr) 2002-08-08

Family

ID=18690177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/007189 WO2002001603A2 (fr) 2000-06-26 2001-06-25 Transistor a couches minces de type grille inferieure, son procede de fabrication et dispositif d'affichage a cristaux liquides utilisant ce transistor

Country Status (6)

Country Link
EP (1) EP1297568A2 (fr)
JP (1) JP2002026326A (fr)
KR (1) KR20020062276A (fr)
CN (1) CN1401135A (fr)
TW (1) TW536828B (fr)
WO (1) WO2002001603A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
JP4403354B2 (ja) * 2002-09-11 2010-01-27 ソニー株式会社 薄膜回路基板
DE602004005685T2 (de) * 2003-03-07 2007-12-27 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer elektronischen anordnung
KR100977229B1 (ko) * 2003-12-30 2010-08-23 엘지디스플레이 주식회사 유기 ｔｆｔ 및 그 제조방법, 그리고 이를 적용한액정표시소자
CN101278403B (zh) 2005-10-14 2010-12-01 株式会社半导体能源研究所 半导体器件及其制造方法
JP2007248956A (ja) * 2006-03-17 2007-09-27 Epson Imaging Devices Corp 電気光学装置および電子機器
CN100449716C (zh) * 2006-03-20 2009-01-07 友达光电股份有限公司 薄膜晶体管及其制造方法
KR101265331B1 (ko) * 2006-06-28 2013-05-23 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법, 이를 구비한 액정표시장치제조방법
KR100965260B1 (ko) * 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
US20100253902A1 (en) * 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
JP2011071476A (ja) 2009-08-25 2011-04-07 Canon Inc 薄膜トランジスタ、薄膜トランジスタを用いた表示装置及び薄膜トランジスタの製造方法
TWI471946B (zh) 2010-11-17 2015-02-01 Innolux Corp 薄膜電晶體
CN102176413A (zh) * 2011-03-25 2011-09-07 信利半导体有限公司 薄膜晶体管形成方法以及薄膜晶体管
JP5447996B2 (ja) * 2011-10-14 2014-03-19 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
KR101427477B1 (ko) * 2012-10-11 2014-08-08 하이디스 테크놀로지 주식회사 액정표시장치
KR102300402B1 (ko) 2015-01-09 2021-09-09 삼성디스플레이 주식회사 유기 발광 표시 장치
CN108695394A (zh) * 2017-04-06 2018-10-23 京东方科技集团股份有限公司 薄膜晶体管、其制备方法、阵列基板及显示装置
US11908911B2 (en) * 2019-05-16 2024-02-20 Intel Corporation Thin film transistors with raised source and drain contacts and process for forming such

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5827760A (en) * 1996-02-12 1998-10-27 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
US5864149A (en) * 1996-04-18 1999-01-26 Nec Corporation Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
WO2001015234A1 (fr) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Transistors en couches minces et leur procede de production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5827760A (en) * 1996-02-12 1998-10-27 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
US5864149A (en) * 1996-04-18 1999-01-26 Nec Corporation Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
WO2001015234A1 (fr) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Transistors en couches minces et leur procede de production

Also Published As

Publication number Publication date
CN1401135A (zh) 2003-03-05
WO2002001603A2 (fr) 2002-01-03
TW536828B (en) 2003-06-11
KR20020062276A (ko) 2002-07-25
EP1297568A2 (fr) 2003-04-02
JP2002026326A (ja) 2002-01-25

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