TW376588B - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
TW376588B
TW376588B TW087110034A TW87110034A TW376588B TW 376588 B TW376588 B TW 376588B TW 087110034 A TW087110034 A TW 087110034A TW 87110034 A TW87110034 A TW 87110034A TW 376588 B TW376588 B TW 376588B
Authority
TW
Taiwan
Prior art keywords
layer
gate electrode
thin film
film transistor
active
Prior art date
Application number
TW087110034A
Other languages
Chinese (zh)
Inventor
Keun-Soo Lee
Kuk-Jin Seo
Original Assignee
Boe Hydis Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boe Hydis Technology Co Ltd filed Critical Boe Hydis Technology Co Ltd
Application granted granted Critical
Publication of TW376588B publication Critical patent/TW376588B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

A thin film transistor used in an active matrix type liquid crystal display device, is disclosed. A thin film transistor includes a transparent insulating substrate on which a gate electrode is formed. A gate insulating layer is formed on the substrate. An active layer is formed on the gate insulating layer opposite to the gate electrode. Here, the active layer is made of a double layer of a micro crystal silicon (μc-Si) layer and a hydrogenated amorphous silicon containing chlorine (a-Si:H(Cl)) layer. An etch stopper is formed on the active layer existing over the gate electrode. Ohmic layers are formed on both sides of the etch stopper and the active layer. The upper surface of the etch stopper by the ohmic layers. Source and drain electrodes are formed on the gate insulating layer and the ohmic layers. A thin film transistor used in an active matrix type liquid crystal display device, comprising: a transparent insulating substrate on which a gate electrode is formed; a gate insulating layer formed on the substrate; and an active layer formed on the gate insulating layer opposite to the gate electrode, the active layer being made of a double layer of a micro crystal silicon (μc-Si) layer and a hydrogenated amorphous silicon containing chlorine (aSi:H(Cl)) layer.
TW087110034A 1997-06-30 1998-06-22 Thin film transistor TW376588B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970030434A KR100257158B1 (en) 1997-06-30 1997-06-30 Thin film transistor and method for manufacturing the same

Publications (1)

Publication Number Publication Date
TW376588B true TW376588B (en) 1999-12-11

Family

ID=19513100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087110034A TW376588B (en) 1997-06-30 1998-06-22 Thin film transistor

Country Status (3)

Country Link
JP (1) JPH11121761A (en)
KR (1) KR100257158B1 (en)
TW (1) TW376588B (en)

Cited By (4)

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CN101794819A (en) * 2009-01-12 2010-08-04 三星移动显示器株式会社 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
CN102184969A (en) * 2007-07-20 2011-09-14 株式会社半导体能源研究所 Liquid crystal display device
CN101315884B (en) * 2007-06-01 2012-09-05 株式会社半导体能源研究所 Method for manufacturing semiconductor device and display device
CN101369604B (en) * 2007-08-17 2012-12-05 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof

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KR100848557B1 (en) * 2002-05-02 2008-07-25 엘지디스플레이 주식회사 A thin film transistor liquid crystal display and a fabrication method thereof
KR101090252B1 (en) 2004-09-24 2011-12-06 삼성전자주식회사 Thin film transistor array panel and method for manufacturing the same
JP5331389B2 (en) * 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 Method for manufacturing display device
US9176353B2 (en) 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7998800B2 (en) * 2007-07-06 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2009049384A (en) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd Light emitting device
TWI456663B (en) * 2007-07-20 2014-10-11 Semiconductor Energy Lab Method for manufacturing display device
US7633089B2 (en) 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
US7897971B2 (en) 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330887B2 (en) 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8786793B2 (en) 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7968885B2 (en) 2007-08-07 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5058909B2 (en) 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 Plasma CVD apparatus and thin film transistor manufacturing method
US9054206B2 (en) 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101484297B1 (en) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method of the same
JP5480480B2 (en) 2007-09-03 2014-04-23 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5395384B2 (en) 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP5503857B2 (en) 2007-09-14 2014-05-28 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP5371341B2 (en) * 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 Electrophoretic display device
US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP5311957B2 (en) 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 Display device and manufacturing method thereof
JP5311955B2 (en) 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 Method for manufacturing display device
US8030655B2 (en) 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
US8591650B2 (en) 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
KR101523353B1 (en) 2007-12-03 2015-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Thin film transistor and semiconductor device
TWI481029B (en) 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 Semiconductor device
US8187956B2 (en) 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
US7910929B2 (en) 2007-12-18 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5527966B2 (en) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 Thin film transistor
JP5235454B2 (en) * 2008-02-29 2013-07-10 株式会社半導体エネルギー研究所 Thin film transistor and display device
JP5538641B2 (en) * 2008-02-29 2014-07-02 株式会社半導体エネルギー研究所 Thin film transistor
US8247315B2 (en) 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
US8227278B2 (en) 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
CN102246310B (en) 2008-12-11 2013-11-06 株式会社半导体能源研究所 Thin film transistor and display device
KR20100067612A (en) 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Thin film transistor and display device
US8258025B2 (en) 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5096437B2 (en) 2009-09-28 2012-12-12 株式会社ジャパンディスプレイイースト Organic EL display device
KR20230007544A (en) 2009-11-06 2023-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8598586B2 (en) 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
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US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101315884B (en) * 2007-06-01 2012-09-05 株式会社半导体能源研究所 Method for manufacturing semiconductor device and display device
CN102184969A (en) * 2007-07-20 2011-09-14 株式会社半导体能源研究所 Liquid crystal display device
CN101350367B (en) * 2007-07-20 2013-02-13 株式会社半导体能源研究所 Liquid crystal display device
CN102184969B (en) * 2007-07-20 2014-06-25 株式会社半导体能源研究所 Liquid crystal display device
US8896778B2 (en) 2007-07-20 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN101369604B (en) * 2007-08-17 2012-12-05 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US8395158B2 (en) 2007-08-17 2013-03-12 Semiconductor Energy Labortory Co., Ltd. Thin film transistor having microcrystalline semiconductor layer
CN101794819A (en) * 2009-01-12 2010-08-04 三星移动显示器株式会社 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
CN101794819B (en) * 2009-01-12 2014-05-28 三星显示有限公司 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor

Also Published As

Publication number Publication date
KR19990006212A (en) 1999-01-25
JPH11121761A (en) 1999-04-30
KR100257158B1 (en) 2000-05-15

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