TW536828B - Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same - Google Patents

Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same Download PDF

Info

Publication number: TW536828B
Authority: TW; Taiwan
Prior art keywords: electrode; source; gate; layer; drain electrodes
Prior art date: 2000-06-26

Application number

TW090118205A

Other languages

English (en)

Chinese (zh)

Inventor

Teizo Yukawa

Original Assignee

Koninkl Philips Electronics Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-06-26

Filing date

2001-07-25

Publication date

2003-06-11

2001-07-25 Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv

2003-06-11 Application granted granted Critical

2003-06-11 Publication of TW536828B publication Critical patent/TW536828B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 30
239000010409 thin film Substances 0.000 title claims abstract description 16
239000004973 liquid crystal related substance Substances 0.000 title claims description 22
239000010408 film Substances 0.000 claims abstract description 68
239000004065 semiconductor Substances 0.000 claims abstract description 19
238000000034 method Methods 0.000 claims description 30
238000012545 processing Methods 0.000 claims description 22
230000015572 biosynthetic process Effects 0.000 claims description 7
238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
238000009413 insulation Methods 0.000 claims description 4
229910052698 phosphorus Inorganic materials 0.000 claims description 4
239000011574 phosphorus Substances 0.000 claims description 4
239000004020 conductor Substances 0.000 claims description 3
241000196324 Embryophyta Species 0.000 claims 1
239000003990 capacitor Substances 0.000 claims 1
239000010410 layer Substances 0.000 abstract description 36
239000002344 surface layer Substances 0.000 abstract description 3
238000002955 isolation Methods 0.000 abstract 2
239000000758 substrate Substances 0.000 description 22
239000000463 material Substances 0.000 description 10
239000011521 glass Substances 0.000 description 8
239000004575 stone Substances 0.000 description 7
229910021417 amorphous silicon Inorganic materials 0.000 description 5
238000005468 ion implantation Methods 0.000 description 4
229910004205 SiNX Inorganic materials 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
239000002131 composite material Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000006378 damage Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
238000002513 implantation Methods 0.000 description 2
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
238000012546 transfer Methods 0.000 description 2
FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
229910000838 Al alloy Inorganic materials 0.000 description 1
238000003775 Density Functional Theory Methods 0.000 description 1
-1 Nitrogen ions Chemical class 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
238000009529 body temperature measurement Methods 0.000 description 1
238000010411 cooking Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
230000002542 deteriorative effect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000005429 filling process Methods 0.000 description 1
230000020169 heat generation Effects 0.000 description 1
239000007943 implant Substances 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000008267 milk Substances 0.000 description 1
210000004080 milk Anatomy 0.000 description 1
235000013336 milk Nutrition 0.000 description 1
150000004767 nitrides Chemical group 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
239000000615 nonconductor Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
239000002689 soil Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910052722 tritium Inorganic materials 0.000 description 1

Classifications

- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Ceramic Engineering (AREA)
Nonlinear Science (AREA)
Manufacturing & Machinery (AREA)
Mathematical Physics (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Optics & Photonics (AREA)
Thin Film Transistor (AREA)
Liquid Crystal (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

TW090118205A 2000-06-26 2001-07-25 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same TW536828B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2000190765A JP2002026326A (ja)	2000-06-26	2000-06-26	ボトムゲート形薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置

Publications (1)

Publication Number	Publication Date
TW536828B true TW536828B (en)	2003-06-11

Family

ID=18690177

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW090118205A TW536828B (en)	2000-06-26	2001-07-25	Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same

Country Status (6)

Country	Link
EP (1)	EP1297568A2 (fr)
JP (1)	JP2002026326A (fr)
KR (1)	KR20020062276A (fr)
CN (1)	CN1401135A (fr)
TW (1)	TW536828B (fr)
WO (1)	WO2002001603A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB0210065D0 (en) *	2002-05-02	2002-06-12	Koninkl Philips Electronics Nv	Electronic devices comprising bottom gate tft's and their manufacture
JP4403354B2 (ja) *	2002-09-11	2010-01-27	ソニー株式会社	薄膜回路基板
DE602004005685T2 (de) *	2003-03-07	2007-12-27	Koninklijke Philips Electronics N.V.	Verfahren zur herstellung einer elektronischen anordnung
KR100977229B1 (ko) *	2003-12-30	2010-08-23	엘지디스플레이 주식회사	유기 ｔｆｔ 및 그 제조방법, 그리고 이를 적용한액정표시소자
CN101278403B (zh)	2005-10-14	2010-12-01	株式会社半导体能源研究所	半导体器件及其制造方法
JP2007248956A (ja) *	2006-03-17	2007-09-27	Epson Imaging Devices Corp	電気光学装置および電子機器
CN100449716C (zh) *	2006-03-20	2009-01-07	友达光电股份有限公司	薄膜晶体管及其制造方法
KR101265331B1 (ko) *	2006-06-28	2013-05-23	엘지디스플레이 주식회사	박막 트랜지스터, 그 제조방법, 이를 구비한 액정표시장치제조방법
KR100965260B1 (ko) *	2008-01-25	2010-06-22	삼성모바일디스플레이주식회사	박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101545460B1 (ko) *	2008-09-12	2015-08-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 생산 방법
US20100253902A1 (en) *	2009-04-07	2010-10-07	Semiconductor Energy Laboratory Co., Ltd.	Liquid crystal display device and manufacturing method thereof
JP2011071476A (ja)	2009-08-25	2011-04-07	Canon Inc	薄膜トランジスタ、薄膜トランジスタを用いた表示装置及び薄膜トランジスタの製造方法
TWI471946B (zh) *	2010-11-17	2015-02-01	Innolux Corp	薄膜電晶體
CN102176413A (zh) *	2011-03-25	2011-09-07	信利半导体有限公司	薄膜晶体管形成方法以及薄膜晶体管
JP5447996B2 (ja) *	2011-10-14	2014-03-19	ソニー株式会社	薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
KR101427477B1 (ko) *	2012-10-11	2014-08-08	하이디스 테크놀로지 주식회사	액정표시장치
KR102300402B1 (ko)	2015-01-09	2021-09-09	삼성디스플레이 주식회사	유기 발광 표시 장치
CN108695394A (zh) *	2017-04-06	2018-10-23	京东方科技集团股份有限公司	薄膜晶体管、其制备方法、阵列基板及显示装置
US11908911B2 (en) *	2019-05-16	2024-02-20	Intel Corporation	Thin film transistors with raised source and drain contacts and process for forming such

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100193348B1 (ko) *	1996-02-12	1999-07-01	구자홍	액정표시장치의 박막트랜지스터 제조방법
JP2757850B2 (ja) *	1996-04-18	1998-05-25	日本電気株式会社	薄膜トランジスタおよびその製造方法
GB9919913D0 (en) *	1999-08-24	1999-10-27	Koninkl Philips Electronics Nv	Thin-film transistors and method for producing the same

2000
- 2000-06-26 JP JP2000190765A patent/JP2002026326A/ja not_active Withdrawn
2001
- 2001-06-25 WO PCT/EP2001/007189 patent/WO2002001603A2/fr not_active Application Discontinuation
- 2001-06-25 KR KR1020027002269A patent/KR20020062276A/ko not_active Application Discontinuation
- 2001-06-25 EP EP01965033A patent/EP1297568A2/fr not_active Withdrawn
- 2001-06-25 CN CN01802561A patent/CN1401135A/zh active Pending
- 2001-07-25 TW TW090118205A patent/TW536828B/zh active

Also Published As

Publication number	Publication date
WO2002001603A2 (fr)	2002-01-03
KR20020062276A (ko)	2002-07-25
WO2002001603A3 (fr)	2002-08-08
CN1401135A (zh)	2003-03-05
EP1297568A2 (fr)	2003-04-02
JP2002026326A (ja)	2002-01-25

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TW536828B (en)	2003-06-11	Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
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