TWI811569B - 定位裝置、曝光裝置及物品之製造方法 - Google Patents

定位裝置、曝光裝置及物品之製造方法 Download PDF

Info

Publication number: TWI811569B
Authority: TW; Taiwan
Prior art keywords: positioning device; plate; wall portion; mounting table; original plate
Prior art date: 2019-10-21

Application number

TW109134697A

Other languages

English (en)

Chinese (zh)

Other versions

TW202117465A (zh

Inventor

本間将人

Original Assignee

日商佳能股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-10-21

Filing date

2020-10-07

Publication date

2023-08-11

2020-10-07 Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司

2021-05-01 Publication of TW202117465A publication Critical patent/TW202117465A/zh

2023-08-11 Application granted granted Critical

2023-08-11 Publication of TWI811569B publication Critical patent/TWI811569B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 11
238000005259 measurement Methods 0.000 claims abstract description 85
230000003287 optical effect Effects 0.000 claims abstract description 71
239000000758 substrate Substances 0.000 claims description 34
230000033001 locomotion Effects 0.000 claims description 33
238000007664 blowing Methods 0.000 claims description 10
238000000034 method Methods 0.000 claims description 7
230000008569 process Effects 0.000 claims description 4
238000007599 discharging Methods 0.000 claims description 3
239000007789 gas Substances 0.000 description 77
238000010586 diagram Methods 0.000 description 14
238000010926 purge Methods 0.000 description 10
238000005286 illumination Methods 0.000 description 7
230000000694 effects Effects 0.000 description 6
230000008859 change Effects 0.000 description 5
230000007246 mechanism Effects 0.000 description 4
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
238000012545 processing Methods 0.000 description 2
230000009467 reduction Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
238000004088 simulation Methods 0.000 description 2
230000033228 biological regulation Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
229910052753 mercury Inorganic materials 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
239000010453 quartz Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Images

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Health & Medical Sciences (AREA)
Environmental & Geological Engineering (AREA)
Public Health (AREA)
Epidemiology (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Toxicology (AREA)
Atmospheric Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

TW109134697A 2019-10-21 2020-10-07 定位裝置、曝光裝置及物品之製造方法 TWI811569B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2019-192133		2019-10-21
JP2019192133A JP7469864B2 (ja)	2019-10-21	2019-10-21	位置決め装置、露光装置、および物品の製造方法

Publications (2)

Publication Number	Publication Date
TW202117465A TW202117465A (zh)	2021-05-01
TWI811569B true TWI811569B (zh)	2023-08-11

Family

ID=75637210

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109134697A TWI811569B (zh)	2019-10-21	2020-10-07	定位裝置、曝光裝置及物品之製造方法

Country Status (4)

Country	Link
JP (1)	JP7469864B2 (ja)
KR (1)	KR20210047259A (ja)
CN (1)	CN112764319A (ja)
TW (1)	TWI811569B (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1137895A (ja) *	1997-07-17	1999-02-12	Nikon Corp	反射率測定センサの検査方法
TW201632839A (zh) *	2014-11-28	2016-09-16	Ａｓｍｌ荷蘭公司	編碼器、位置量測系統及微影裝置

Family Cites Families (11)

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JP3089802B2 (ja) *	1992-04-01	2000-09-18	株式会社ニコン	ステージの位置計測装置、投影露光装置及び投影露光方法
JP2001160531A (ja) *	1999-12-01	2001-06-12	Canon Inc	ステージ装置
JP2004241478A (ja)	2003-02-04	2004-08-26	Nikon Corp	露光方法及びその装置、並びにデバイス製造方法
JP4125315B2 (ja) *	2005-10-11	2008-07-30	キヤノン株式会社	露光装置及びデバイス製造方法
JP2009141190A (ja)	2007-12-07	2009-06-25	Nikon Corp	露光装置、露光方法及びデバイス製造方法
JP2010161116A (ja)	2009-01-06	2010-07-22	Canon Inc	位置決め装置、それを用いた露光装置及びデバイスの製造方法
JP5002613B2 (ja) *	2009-03-31	2012-08-15	株式会社東芝	Ｘｙステージ装置
JP5679850B2 (ja) *	2011-02-07	2015-03-04	キヤノン株式会社	インプリント装置、および、物品の製造方法
JP5744593B2 (ja)	2011-03-29	2015-07-08	キヤノン株式会社	計測装置、リソグラフィ装置及びデバイスの製造方法
JP2017111243A (ja)	2015-12-15	2017-06-22	キヤノン株式会社	ステージ装置、リソグラフィ装置、及び物品の製造方法
JP6916616B2 (ja) *	2016-12-13	2021-08-11	キヤノン株式会社	リソグラフィ装置、物品の製造方法、および計測装置

2019
- 2019-10-21 JP JP2019192133A patent/JP7469864B2/ja active Active
2020
- 2020-10-07 TW TW109134697A patent/TWI811569B/zh active
- 2020-10-19 KR KR1020200134888A patent/KR20210047259A/ko active Search and Examination
- 2020-10-21 CN CN202011134936.5A patent/CN112764319A/zh active Pending

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1137895A (ja) *	1997-07-17	1999-02-12	Nikon Corp	反射率測定センサの検査方法
TW201632839A (zh) *	2014-11-28	2016-09-16	Ａｓｍｌ荷蘭公司	編碼器、位置量測系統及微影裝置

Also Published As

Publication number	Publication date
JP2021067775A (ja)	2021-04-30
JP7469864B2 (ja)	2024-04-17
TW202117465A (zh)	2021-05-01
CN112764319A (zh)	2021-05-07
KR20210047259A (ko)	2021-04-29

Publication	Publication Date	Title
US8964166B2 (en)	2015-02-24	Stage device, exposure apparatus and method of producing device
JP5800257B2 (ja)	2015-10-28	露光装置及び露光方法、並びにデバイス製造方法
US8184261B2 (en)	2012-05-22	Exposure apparatus
JP2020112695A (ja)	2020-07-27	露光装置、露光方法および、物品製造方法
JP3637639B2 (ja)	2005-04-13	露光装置
TWI811569B (zh)	2023-08-11	定位裝置、曝光裝置及物品之製造方法
US7515277B2 (en)	2009-04-07	Stage apparatus, control system, exposure apparatus, and device manufacturing method
JP7299755B2 (ja)	2023-06-28	露光装置、および物品の製造方法
JP2013083655A (ja)	2013-05-09	露光装置、及びデバイス製造方法
JPWO2008136404A1 (ja)	2010-07-29	光学部材、干渉計システム、ステージ装置、露光装置、及びデバイス製造方法
JP7385421B2 (ja)	2023-11-22	露光装置、および物品製造方法
JP5414288B2 (ja)	2014-02-12	露光方法及び装置、並びにデバイス製造方法
US10725388B2 (en)	2020-07-28	Exposure apparatus and method of manufacturing article
JP2004273666A (ja)	2004-09-30	露光装置
TWI837434B (zh)	2024-04-01	照明光學系統、曝光裝置、及物品製造方法
JP5612810B2 (ja)	2014-10-22	露光装置及び露光方法、並びにデバイス製造方法
JP2009238922A (ja)	2009-10-15	露光装置、露光方法及びデバイスの製造方法
JPH09243324A (ja)	1997-09-19	レーザ干渉計方式のｘｙ位置決め装置
KR20080052374A (ko)	2008-06-11	위치결정장치, 노광장치 및 디바이스의 제조방법
JP2007081314A (ja)	2007-03-29	ステージ装置の制御方法、露光装置及びデバイスの製造方法
JP2011033976A (ja)	2011-02-17	パターン形成方法、及びデバイス製造方法
JP2017015995A (ja)	2017-01-19	露光装置及び物品の製造方法
JPH1027747A (ja)	1998-01-27	露光装置
JP2001007000A (ja)	2001-01-12	露光装置
JP2010027682A (ja)	2010-02-04	ステージ装置、露光装置、制御方法、及びデバイス製造方法