TWI550753B - A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method - Google Patents

A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method Download PDF

Info

Publication number: TWI550753B
Authority: TW; Taiwan
Prior art keywords: temperature; substrate; heaters; heater; control unit
Prior art date: 2011-07-25

Application number

TW101126293A

Other languages

English (en)

Chinese (zh)

Other versions

TW201308497A (zh

Inventor

Seiji Tanaka

hideto Yoshiya

Toshimitsu Sakai

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-07-25

Filing date

2012-07-20

Publication date

2016-09-21

2012-07-20 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2013-02-16 Publication of TW201308497A publication Critical patent/TW201308497A/zh

2016-09-21 Application granted granted Critical

2016-09-21 Publication of TWI550753B publication Critical patent/TWI550753B/zh

Links

239000000758 substrate Substances 0.000 title claims description 188
238000003672 processing method Methods 0.000 title claims description 42
238000012545 processing Methods 0.000 title claims description 35
238000001816 cooling Methods 0.000 claims description 48
238000010438 heat treatment Methods 0.000 claims description 40
238000003860 storage Methods 0.000 claims description 11
238000010586 diagram Methods 0.000 description 8
230000006870 function Effects 0.000 description 8
238000012986 modification Methods 0.000 description 8
230000004048 modification Effects 0.000 description 8
238000012423 maintenance Methods 0.000 description 7
238000000034 method Methods 0.000 description 6
230000015572 biosynthetic process Effects 0.000 description 4
239000003507 refrigerant Substances 0.000 description 3
241000270295 Serpentes Species 0.000 description 2
238000011144 upstream manufacturing Methods 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
238000013459 approach Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000020169 heat generation Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000011282 treatment Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Drying Of Semiconductors (AREA)
Physical Vapour Deposition (AREA)
Control Of Temperature (AREA)

TW101126293A 2011-07-25 2012-07-20 A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method TWI550753B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2011162138A JP5897275B2 (ja)	2011-07-25	2011-07-25	温度制御ユニット、基板載置台、基板処理装置、温度制御システム、及び基板処理方法

Publications (2)

Publication Number	Publication Date
TW201308497A TW201308497A (zh)	2013-02-16
TWI550753B true TWI550753B (zh)	2016-09-21

Family

ID=47575833

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW101126293A TWI550753B (zh)	2011-07-25	2012-07-20	A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method

Country Status (4)

Country	Link
JP (1)	JP5897275B2 (ja)
KR (1)	KR101422915B1 (ja)
CN (1)	CN102903651B (ja)
TW (1)	TWI550753B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6346550B2 (ja) *	2013-12-05	2018-06-20	Ckd株式会社	流体供給制御装置
JP2016168780A (ja) *	2015-03-13	2016-09-23	富士フイルム株式会社	液体供給装置及び画像形成装置
JP6525751B2 (ja)	2015-06-11	2019-06-05	東京エレクトロン株式会社	温度制御方法及びプラズマ処理装置
US10648080B2 (en) *	2016-05-06	2020-05-12	Applied Materials, Inc.	Full-area counter-flow heat exchange substrate support
KR101958636B1 (ko)	2016-10-31	2019-03-18	세메스 주식회사	기판 지지 장치 및 이를 가지는 기판 처리 설비, 그리고 기판 처리 방법
JP2023161767A (ja) *	2022-04-26	2023-11-08	Ckd株式会社	温度調整用流量制御ユニットおよび半導体製造装置

Citations (4)

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TW257842B (ja) *	1994-01-21	1995-09-21	Fsi Internat Inc
JP3129417B2 (ja) *	1999-03-11	2001-01-29	三菱重工業株式会社	加熱冷却装置及び電気特性評価装置
KR100875388B1 (ko) *	2006-12-07	2008-12-23	에이비엠 주식회사	티에프티-엘씨디, 반도체 및 오엘이디 제조설비용핫플레이트의 제조방법
CN201436515U (zh) *	2006-08-08	2010-04-07	应用材料股份有限公司	基板支撑组件

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JP3527382B2 (ja) *	1997-03-13	2004-05-17	三菱電機株式会社	均熱装置
JPH11173774A (ja) *	1997-12-05	1999-07-02	Komatsu Ltd	プレート形ヒートパイプ及びこれを用いた温度制御装置
JP2000269189A (ja) *	1999-03-15	2000-09-29	Sony Corp	プラズマエッチング法
JP2001209056A (ja) *	2000-01-25	2001-08-03	Shinetsu Engineering Kk	液晶パネル製造装置
JP2001318720A (ja) *	2000-05-08	2001-11-16	Komatsu Ltd	温度制御方法及び装置
JP4153781B2 (ja) *	2002-01-31	2008-09-24	大日本スクリーン製造株式会社	熱処理装置および基板処理装置
JP4625394B2 (ja) *	2005-10-04	2011-02-02	三菱重工業株式会社	製膜装置、製膜方法
JP4625783B2 (ja)	2006-04-03	2011-02-02	株式会社フューチャービジョン	基板ステージ及び基板処理装置
JP4988459B2 (ja) *	2007-07-04	2012-08-01	エスペック株式会社	試験用恒温装置及び半導体ウエハの性能試験装置

2011
- 2011-07-25 JP JP2011162138A patent/JP5897275B2/ja active Active
2012
- 2012-07-18 KR KR1020120078028A patent/KR101422915B1/ko active IP Right Grant
- 2012-07-20 TW TW101126293A patent/TWI550753B/zh not_active IP Right Cessation
- 2012-07-25 CN CN201210258971.7A patent/CN102903651B/zh active Active

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW257842B (ja) *	1994-01-21	1995-09-21	Fsi Internat Inc
JP3129417B2 (ja) *	1999-03-11	2001-01-29	三菱重工業株式会社	加熱冷却装置及び電気特性評価装置
CN201436515U (zh) *	2006-08-08	2010-04-07	应用材料股份有限公司	基板支撑组件
KR100875388B1 (ko) *	2006-12-07	2008-12-23	에이비엠 주식회사	티에프티-엘씨디, 반도체 및 오엘이디 제조설비용핫플레이트의 제조방법

Also Published As

Publication number	Publication date
JP5897275B2 (ja)	2016-03-30
KR20130012553A (ko)	2013-02-04
KR101422915B1 (ko)	2014-07-23
CN102903651B (zh)	2015-11-18
JP2013026561A (ja)	2013-02-04
TW201308497A (zh)	2013-02-16
CN102903651A (zh)	2013-01-30

Legal Events

Date	Code	Title	Description
2023-06-21	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TWI550753B (zh)	2016-09-21	A temperature control unit, a substrate stage, a substrate processing device, a temperature control system, and a substrate processing method
US8741065B2 (en)	2014-06-03	Substrate processing apparatus
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JPWO2008142769A1 (ja)	2010-08-05	半導体装置の試験装置及び試験方法
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JP2009021596A (ja)	2009-01-29	プレート、これを有する基板温度調節装置及びこれを有する基板処理装置。
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JP5978951B2 (ja)	2016-08-24	半導体装置の試験装置及び試験方法
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JP2007242850A (ja)	2007-09-20	半導体製造装置及び半導体製造方法
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TWI844060B (zh)	2024-06-01	加熱處理裝置
KR100938363B1 (ko)	2010-01-22	메모리 모듈의 신뢰성 검사용 온도조절장치
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JP4533732B2 (ja)	2010-09-01	製膜装置及びその製造方法
JP2005257452A (ja)	2005-09-22	熱真空試験装置
KR20140000873U (ko)	2014-02-07	반도체 소자들의 온도를 제어하기 위한 장치
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