KR101422915B1 - 온도 제어 유닛, 기판 탑재대, 기판 처리 장치, 온도 제어 시스템 및 기판 처리 방법 - Google Patents

온도 제어 유닛, 기판 탑재대, 기판 처리 장치, 온도 제어 시스템 및 기판 처리 방법 Download PDF

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Publication number
KR101422915B1
KR101422915B1 KR1020120078028A KR20120078028A KR101422915B1 KR 101422915 B1 KR101422915 B1 KR 101422915B1 KR 1020120078028 A KR1020120078028 A KR 1020120078028A KR 20120078028 A KR20120078028 A KR 20120078028A KR 101422915 B1 KR101422915 B1 KR 101422915B1
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KR
South Korea
Prior art keywords
temperature
substrate
heaters
heater
control unit
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KR1020120078028A
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English (en)
Korean (ko)
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KR20130012553A (ko
Inventor
세이지 다나카
히데토 요시야
도시미츠 사카이
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20130012553A publication Critical patent/KR20130012553A/ko
Application granted granted Critical
Publication of KR101422915B1 publication Critical patent/KR101422915B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Temperature (AREA)
KR1020120078028A 2011-07-25 2012-07-18 온도 제어 유닛, 기판 탑재대, 기판 처리 장치, 온도 제어 시스템 및 기판 처리 방법 KR101422915B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-162138 2011-07-25
JP2011162138A JP5897275B2 (ja) 2011-07-25 2011-07-25 温度制御ユニット、基板載置台、基板処理装置、温度制御システム、及び基板処理方法

Publications (2)

Publication Number Publication Date
KR20130012553A KR20130012553A (ko) 2013-02-04
KR101422915B1 true KR101422915B1 (ko) 2014-07-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120078028A KR101422915B1 (ko) 2011-07-25 2012-07-18 온도 제어 유닛, 기판 탑재대, 기판 처리 장치, 온도 제어 시스템 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP5897275B2 (ja)
KR (1) KR101422915B1 (ja)
CN (1) CN102903651B (ja)
TW (1) TWI550753B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586719B2 (en) 2016-10-31 2020-03-10 Semes Co., Ltd Substrates support apparatus, substrate treating system including the same, and substrate treating method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6346550B2 (ja) * 2013-12-05 2018-06-20 Ckd株式会社 流体供給制御装置
JP2016168780A (ja) * 2015-03-13 2016-09-23 富士フイルム株式会社 液体供給装置及び画像形成装置
JP6525751B2 (ja) 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
US10648080B2 (en) * 2016-05-06 2020-05-12 Applied Materials, Inc. Full-area counter-flow heat exchange substrate support
JP2023161767A (ja) * 2022-04-26 2023-11-08 Ckd株式会社 温度調整用流量制御ユニットおよび半導体製造装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209056A (ja) * 2000-01-25 2001-08-03 Shinetsu Engineering Kk 液晶パネル製造装置
KR20070001036A (ko) * 2006-12-07 2007-01-03 (주)포인트엔지니어링 티에프티-엘씨디, 반도체 및 오엘이디 제조설비용핫플레이트의 제조방법
JP2007281010A (ja) 2006-04-03 2007-10-25 Future Vision:Kk 基板ステージとそれを用いた基板処理装置及び方法
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support

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JP3188363B2 (ja) * 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
JP3527382B2 (ja) * 1997-03-13 2004-05-17 三菱電機株式会社 均熱装置
JPH11173774A (ja) * 1997-12-05 1999-07-02 Komatsu Ltd プレート形ヒートパイプ及びこれを用いた温度制御装置
JP3129417B2 (ja) * 1999-03-11 2001-01-29 三菱重工業株式会社 加熱冷却装置及び電気特性評価装置
JP2000269189A (ja) * 1999-03-15 2000-09-29 Sony Corp プラズマエッチング法
JP2001318720A (ja) * 2000-05-08 2001-11-16 Komatsu Ltd 温度制御方法及び装置
JP4153781B2 (ja) * 2002-01-31 2008-09-24 大日本スクリーン製造株式会社 熱処理装置および基板処理装置
JP4625394B2 (ja) * 2005-10-04 2011-02-02 三菱重工業株式会社 製膜装置、製膜方法
JP4988459B2 (ja) * 2007-07-04 2012-08-01 エスペック株式会社 試験用恒温装置及び半導体ウエハの性能試験装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001209056A (ja) * 2000-01-25 2001-08-03 Shinetsu Engineering Kk 液晶パネル製造装置
JP2007281010A (ja) 2006-04-03 2007-10-25 Future Vision:Kk 基板ステージとそれを用いた基板処理装置及び方法
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
KR20070001036A (ko) * 2006-12-07 2007-01-03 (주)포인트엔지니어링 티에프티-엘씨디, 반도체 및 오엘이디 제조설비용핫플레이트의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586719B2 (en) 2016-10-31 2020-03-10 Semes Co., Ltd Substrates support apparatus, substrate treating system including the same, and substrate treating method

Also Published As

Publication number Publication date
JP5897275B2 (ja) 2016-03-30
KR20130012553A (ko) 2013-02-04
CN102903651B (zh) 2015-11-18
TWI550753B (zh) 2016-09-21
JP2013026561A (ja) 2013-02-04
TW201308497A (zh) 2013-02-16
CN102903651A (zh) 2013-01-30

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