TWI395294B - 溝式閘極場效電晶體及其形成方法 - Google Patents

溝式閘極場效電晶體及其形成方法 Download PDF

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TWI395294B
TWI395294B TW095118598A TW95118598A TWI395294B TW I395294 B TWI395294 B TW I395294B TW 095118598 A TW095118598 A TW 095118598A TW 95118598 A TW95118598 A TW 95118598A TW I395294 B TWI395294 B TW I395294B
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region
trench
gate
forming
electrode
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TW200703561A (en
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Hamza Yilmaz
Daniel Calafut
Christopher Boguslaw Kocon
Steven P Sapp
Dean E Probst
Nathan L Kraft
Thomas E Grebs
Rodney S Ridley
Gary M Dolny
Bruce D Marchant
Joseph A Yedinak
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Fairchild Semiconductor
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Description

溝式閘極場效電晶體及其形成方法
本發明主張於2005年05月26日提出申請之美國專利臨時申請案第60/685,727號之優先權，該項申請案之全部內容係包含於此處以作為參考之用。
於2004年12月29日提出申請之共同讓渡之美國專利申請案第11/026,276號之全部內容係包含於此處以作為參考之用。
發明領域
本發明係關於半導體動力裝置，且更特別地是關於增進的溝式閘極動力裝置以及其製造方法。
 發明背景
第1圖是習知的溝式閘極MOSFET 100的剖面圖，此種溝式閘極MOSFET 100已知具有一些物理與性能特性，且具有一些例如單元間距、崩潰電壓容量、導通電阻(Rdson)以及電晶體強固性等的限制。溝式閘極105延伸通過P井106且終止在N－epi區域104內。溝式閘極105包括一作為溝槽側壁與底部的內襯之閘極介電層114以及一凹陷的閘電極112。介電層116與118將閘電極112與鋪設在上面的源極互連(未顯示)隔離開來。
第2圖是一習知的溝式閘極MOSFET 200(亦稱為遮蔽溝式閘極MOSFET)的剖面圖，此種溝式閘極MOSFET改進了第1圖中的溝式閘極MOSFET之一些特性。此溝槽205包括一遮蔽電極220，係藉由一遮蔽介電層222而與漂移區域204隔離開來。溝槽205亦包括閘電極212，係藉由一極間介電層(interpoly dielectric)224而設置在遮蔽電極220的上方且與之隔離。遮蔽電極220能減少閘極－汲極電容(Cgd)且增進崩潰電壓。然而，單一閘極電晶體100以及雙重閘極電晶體200的一項缺點在於漂移區域提供了高達大約40%的總Rdson，嚴重限制了Rdson的增進。對於雙重閘極溝槽結構來說，藉由需要一更厚的漂移區域，致使較深的溝槽使上述問題更為嚴重。溝式閘極電晶體100與200的另一項缺點在於由於底部溝槽的曲率所導致溝槽底部之高電場，限制了諸如崩潰墊壓與電晶體強固性等性能參數的增進。有些應用情形需要將Schottky二極體與動力MOSFET整合在一起。然而，這樣的整合一般會需要很複雜的製程技術，其中具有許多製程以及掩蔽步驟。
因此，需要一種具有成本效益的結構以及形成溝式閘極FET的方法，整體整合的二極體以及MOSFET結構，以及能夠消除或縮小上述先前技術有關的缺點之終端結構，因此可允許在溝式閘極FET的物理以及性能特性上產生大量的進步。
 發明概要
場效電晶體包括：一第一導電形式的本體區域，係位於一具有第二導電型式的半導體區域上；一閘極溝槽，係延伸通過此本體區域且終止於半導體區域內；至少一導電遮蔽電極，係設置在此閘極溝槽內；一閘電極，係設置在此閘極溝槽內，且在至少一導電遮蔽電極的上方但與之隔離；一遮蔽介電層，係用以將該至少一導電遮蔽電極與半導體區域隔開；一閘極介電層，係用以將該閘電極與本體區域隔開，此遮蔽介電層之形成方式能使它朝外展開且直接延伸在本體區域下方。
在一實施例中，半導體區域包含一基底區域以及在此基底區域上的漂移區域。本體區域延伸在漂移區域上，且具有一比基底區域更低的摻雜濃度。閘極溝槽延伸通過漂移區域且終止於該基底區域內。
根據本發明另一實施例，以下列方式形成一場效電晶體。形成一上溝槽部，係延伸在一半導體區域內達第一深度。上溝槽部的側壁是以一材質的保護層作為襯裡，致使沿著上溝槽部的至少一部分底壁之半導體區域會仍舊會暴露出來。形成一下溝槽部，用以延伸通過上溝槽部的暴露底部，同時藉由該材質的保護層保護上溝槽部的側壁。上溝槽部具有比下溝槽部更大的寬度。
在一實施例中，沿著下溝槽部的側壁以及底壁形成一遮蔽介電層，移除此材質的保護層。沿著上溝槽部的側壁形成一第二絕緣層，第一絕緣層具有比第二絕緣層更大的厚度。
在另一實施例中，第一絕緣層是由矽的局部氧化(LOCOS)而形成的。
在另一實施例中，一導電遮蔽電極是形成在下溝槽部中，一極間介電層是形成在此導電遮蔽電極上方，且一閘電極是形成在此極間介電層上方。
根據本發明另一實施例，一場效電晶體，包含：一具有第一導電型式的本體區域，係位於具有第二導電型式的半導體區域中；一閘極溝槽，係延伸通過本體區域而終止於半導體區域內；一具有第二導電型式的源極區域，係位於閘極溝槽附近的本體區域內，致使源極區域以及本體區域與半導體區域之間的一介面一起限定出一通道區域，此通道區域是沿著閘極溝槽側壁而延伸的；以及，一具有第二導電型式的通道增強區域，係位於閘極溝槽的附近，此通道增強區域局部延伸到通道區域的下部內，藉此減少通道區域的電阻。
在一實施例中，一閘電極是設置在此閘極溝槽中，且通道增強區域沿著溝式閘極側壁而重疊該閘電極。
在另一實施例中，至少一導電遮蔽電極是設置在閘極溝槽內。一閘電極是設置閘極溝槽內，且在至少一導電遮蔽電極上方但與之隔離。一遮蔽介電層將至少一導電遮蔽電極與半導體區域隔離開來，一閘電極層將閘電極與本體區域隔離開來。
根據本發明另一實施例，以下列方式形成一場效電晶體。形成一溝槽於一半導體區域內，形成一遮蔽電極於此溝槽內。執行具有第一導電型式的雜質的一有角度的側壁植入，以便在溝槽附近形成一通道增強區域。具有第二導電型式的一本體區域是形成在此半導體區域內。具有第一導電型式的一源極區域是形成在此本體區域內，致使源極區域以及本體區域與半導體區域之間的一介面一起限定出一通道區域，此通道區域是沿著閘極溝槽側壁而延伸的。此通道增強區域局部延伸到通道區域的下部內，藉此減少通道區域的電阻。
在一實施例中，一閘電極是形成在遮蔽電極上方但與之隔離開來。
在另一實施例中，通道增強區域是自行對準至遮蔽電極。
根據本發明另一實施例，一場效電晶體包括：一閘極溝槽，係延伸到半導體區域內，此閘極溝槽具有一設置在其中的凹陷閘電極；一在半導體區域中的源極區域，係經過閘極溝槽的各側之側面；一導電材質，係用以填滿此閘極溝槽的一上部，以便沿著各源極區域的至少一側壁與源極區域產生電氣接觸，此導電材質是與凹陷的閘電極隔離開來。
根據本發明另一實施例，以下列方式形成一場效電晶體。形成一溝槽是於一半導體區域內，形成一凹陷的閘電極於此溝槽內。執行雜質的兩段式有角度植入，以便在溝槽的各側上形成源極區域。一介電層是形成在凹陷的閘電極上，此溝槽被一導電材質所填滿，致使導電材質能與源極區域產生電氣接觸。
在一實施例中，導電材質包含有摻雜的多晶矽(polysilicon)。
可以從以下的詳細說明與附圖更加了解本發明的特性與優點。
圖式簡單說明
第1圖是一習知的單閘極溝槽MOSFET之剖面圖。
第2圖是一習知的雙重閘極溝槽MOSFET之剖面圖。
第3圖是本發明一實施例的雙重閘極溝槽MOSFET之剖面圖，其中閘極溝槽遮蔽電極是延伸到基底內。
第4圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中使用LOCOS而形成遮蔽介電層。
第5圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中具有側壁通道增強區域。
第6圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中具有一源極插塞區域。
第7圖是本發明另一實施例的複合雙重閘極溝槽MOSFET之剖面圖，其中具有側壁通道增強區域、源極插塞區域以極LOCOS遮蔽介電層。
第8圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中整體地整合有Schottky二極體。
第9圖是顯示一小型邊緣終端結構，其中整合有本發明另一實施例的雙重閘極溝槽MOSFET。
第10A至10E圖是根據本發明另一實施例在形成第4圖的MOSFET400中所使用的一製程模組之各個製程步驟時的剖面圖。
第11圖是根據本發明另一實施例在形成第5圖的MOSFET500中所使用的一製程模組所對應的剖面圖。
第12A至12D圖是根據本發明另一實施例在形成第6圖的MOSFET600中所使用的一製程模組之各個製程步驟時的剖面圖。
第13A至13L圖是根據本發明一實施例在形成一雙重閘極溝槽MOSFET中所使用的一範例性製程之各個步驟時的剖面圖。
 較佳實施例之詳細說明
第13A至13L圖的剖面圖所代表的製程順序，係用於形成本發明一實施例的雙重閘極溝槽MOSFET之範例性製程。此製程順序將作為基本製程，且可被修改成包括各種製程模組，以便用於形成以下敘述的不同單元結構。要知道的是，以下所說的製程模組也可以與其他基礎製程整合在一起，且並未被侷限於第13A至13L圖所顯示的製程。以下，將說明第13A至13L圖之製程順序。
在第13A圖中，一n型外延層1302是形成在一大量摻雜的n型基底(未顯示)上。植入具有p型導電性的摻雜物，以便在此外延層1302中形成一本體區域1304。例如包含氧－氮－氧(ONO)複合層的一堅硬掩罩1306是用以限定且蝕刻多數溝槽1308，這些溝槽是延伸通過本體區域1304且延伸到外延層1302內。
在第13B圖中，一遮蔽介電層1310(例如包含氧化物)是使用習知技術而形成作為溝槽側壁與底部的襯裡，且延伸於堅硬掩罩1306上。在第13C圖中，藉由沉積一層多晶矽填滿溝槽1308而形成一遮蔽電極1312，然後，回蝕此多晶矽，使此多晶矽凹陷深入溝槽1308內。然後，使遮蔽介電層1310產生凹陷，而在溝槽側壁上留下一薄層的介電層1313。遮蔽電極1312進一步產生凹陷，以便使其頂表面與凹陷的遮蔽電極之頂表面產生平齊。
在第13D圖中，沉積一層氮化物，並實施非等方向性蝕刻，致使僅留下沿著溝槽側壁延伸的氮化物層之部位1314。在第13E圖中，藉由實施熱氧化法而形成一極間介電層(IPD)1316。由於所有其他表面均被氮化物或氧化物所覆蓋，所以，僅一層氧化物形成於遮蔽電極1312上。在另一實施例中，修改此製程順序，以便使用二氧化物層來形成IPD層。第一層的熱氧化物是形成於遮蔽電極上方，且然後，使用SACVD法沉積一氧化物的披覆層(conformal layer)，以便獲得一均勻的IPD層。
在第13F圖中，實施一氧化物蝕刻，以便移除ONO複合層1306的頂部氧化物層以及沿著溝槽側壁形成於氮化物層上的任何氧化物。然後，此ONO複合層的新暴露之氮化物層以及沿著溝槽側壁的氮化物層1314被製成帶狀。實施另一氧化物蝕刻，以便從溝槽側壁以及ONO複合層1306的底部氧化物層移除介電層1313，致使矽是沿著溝槽側壁以及第13F圖中所示的溝槽附近之突丘(mesa)區域產生暴露。在第13G圖中，使用已知技術形成一閘極介電層1318，此閘極介電層是沿著溝槽側壁延伸於極間介電層上且在溝槽附近的突丘區域上方。在第13H圖中，沉積一層多晶矽用以填滿此溝槽，且然後回蝕，以便在溝槽內形成凹陷的閘電極1320。
在第13I圖中，在突丘上的閘電極被回蝕至一適用於源極植入的厚度。在此活性區域內實施一全面的源極植入，以便形成在突丘區域內的相鄰溝槽之間延伸的n型區域1322。在第13J圖中，使用習知方法在溝槽與突丘上形成一層BPSG 1324A。在第13K圖中，使用一掩蓋層(未顯示)，除了在溝槽以及n型區域1322a上方的部位1324B以外，移除BPSG層1324A。因此，暴露出BPSG部位1324附近的矽突丘表面。然後，實施一矽蝕刻，以便使暴露出來的矽表面凹陷至一低於n型區域1322a的深度，因此形成多數接觸開口1326。此矽凹穴移除了一部分的各n型區域1322a，留下自行對齊的源極區域1322b。在第13L圖中，實施一厚重體植入(heavy body implant)，以便在本體區域1304內形成具有p型導電性的自行對準厚重體區域1329。實施一BPSG回流，以便獲得一用於接觸開口的較佳寬高比，且獲得一用於稍後形成的源極互連層1330之較佳階梯覆蓋率(step coverage)。源極互連1330電氣式地接觸厚重區域1329以及源極區域1322。
以下，將說明各種單元結構、其對應的製程模組以及方式，其中這些製程模組可與第13A至13L圖顯示的製程整合在一起。第3圖顯示一雙重閘極溝槽MOSFET300之剖面圖，其結構是類似於第13L圖的雙重閘極溝槽MOSFET300，除了溝槽305以及遮蔽電極320是延伸到基底302內。如此能有利地大幅減少漂移區域的厚度，因此增進了Rdson。此外，基底的高摻雜濃度使電位降移動到遮蔽氧化物內，且因此去掉了與習知溝槽技術有關的曲率受限崩潰問題。如此亦增進了裝置的強固性，因為崩塌點(亦即，最大衝擊離子化率)是移動至電晶體突丘的中心，且遠離與引發強固性不足有關的寄生雙極元件。對於第13A至13L圖的製程順序唯一需要的修改，就是在第13A圖中需要形成一較薄的外延層於基底上，致使這些溝槽能抵達基底內。
第4圖是本發明一實施例的雙重閘極溝槽MOSFET400之剖面圖，其中使用LOCOS而形成遮蔽介電層422。虛線顯示溝槽605的輪廓。在形成此遮蔽介電層422時，LOCOS製程導致消耗了溝槽605附近的矽，因此使遮蔽介電層433朝外展開，且直接延伸於本體區域406下方。LOCOS製程是用於形成遮蔽介電層422之有利於成本效益的方法，且亦能產生出一均勻膜。MOSFET400的上部是類似於第3圖中的上部MOSFET300。雖然溝槽605以及遮蔽電極420是顯示成延伸到基底402內，但是他們也可以類似於第2圖中所示的MOSFET200而終止於N區域404。在一實施例中，MOSFET400是藉由將第10A至10E圖的剖面圖所示的製程模組與第13A至13L圖的製程整合在一起而形成的，敘述如下。
對應於第13A至13D圖的製程步驟是藉由對應於第10A至10E圖的製程步驟加以取代。對應於第10A圖的製程步驟是與對應於第13A圖的製程步驟相同，除了在第10A圖中形成一較淺的溝槽1008，使其延伸恰好通過本體區域1004。在第10B圖中，沿著溝槽側壁而形成氮化物襯墊1010。在第10C圖中，實施一矽蝕刻(自行對齊至氮化物襯墊1010)，藉此使溝槽1008延伸得更深入矽區域1002內。因此，閘極溝槽具有較寬的上部1008且具有較窄的下部1012。在第10D圖中，實施一LOCOS製程，藉此沿著暴露出的矽表面(亦即，在下溝槽部1012中)，而形成遮蔽介電層1014的一自行對齊層。LOCOS製程如圖所示消耗掉一部分的矽區域1002(虛線顯示下溝槽部1012的輪廓)。在第10E圖中，藉由沉積一層多晶矽而形成一遮蔽電極1016，且然後，回蝕此多晶矽，以便使多晶矽凹陷到溝槽內。接著，實施對應於第13E至13L圖的製程步驟，以完成此單元結構。在圖形中不同層以及區域的厚度與尺寸不需要依照比例。例如，在第10D圖中，實際上，氮化物襯墊101是比他們看起來更薄，致使朝外展開的LOCOS遮蔽介電層1014會直接延伸於本體區域1004下方。
第5圖顯示一根據本發明另一實施例的雙重閘極溝槽MOSFET500之剖面圖，係類似於第3圖的MOSFET300，除了側壁通道增強區域526是合併到MOSFET500內以外。側壁通道增強區域526是沿著MOSFET500的各通道區域之一底部而形成的，以便補償在通道內摻雜濃度數據圖的尾端。因此，能夠有利地減少通道長度以及通道電阻。因為在通道區域內的摻雜濃度之峰值恰好發生在源極區域510底下(亦即，遠離通道區域的底部)，增加通道增強區域526並不會不利地影響電晶體的臨限電壓。假如MOSFET500是n型的話，通道增強區域526則可以是n型。如同在先前的實施例中一樣，可以修改MOSFET500，致使溝槽505能終止於漂移區域504而非在基底502內。在一實施例中，MOSFET500是藉由將第11圖的剖面圖所示的製程模組與第13A至13L圖的製程整合在一起而形成，敘述如下。
對應於第l1圖的製程模組必須要在第13F圖之後但要在第13G圖之前實施，亦即，在實施對應於第13A至13F圖的步驟之後，如第11圖所示，沿著溝槽側壁形成一屏蔽氧化物1112。此屏蔽氧化物1112需要具有一適當厚度，以用於植入摻雜物時可以通過。在第11圖中，以一預定角度實施n型摻雜物的通道增強植入1113，以便沿著一溝槽側壁形成通道增強區域，且以一相反於第11圖所示的角度實施第二通道增強植入，以沿著相反的溝槽側壁形成一通道增強區域。通道增強區域將會自行對齊至先前步驟中所形成的IPD1124。然後，實施對應於第13G至13L圖的製程步驟，以完成此單元結構。在一實施例中，本體區域是形成在通道增強植入1113之前，且在另一實施例中，本體區域是形成在通道增強植入1113之後。
第6圖是本發明另一實施例的雙重閘極溝槽MOSFET600之剖面圖，其中具有一源極插塞區域630。取代如第3圖中所實施的步驟在閘電極614上形成一介電丘(dielectric dome)，一薄介電層628是形成在閘電極614上，且介電層628上溝槽605的殘餘部位被一源極插塞630(例如包含多晶矽)所填滿。源極插塞630電氣式地連接位於閘極溝槽605側面的源極區域610。MOSFET600具有能提供形成正面金屬的一平面之優點。而且，源極插塞能夠在溝槽的兩側上形成非常狹窄的源極區域，因此，減少了單元間距而不會不利地影響源極電阻。狹窄的源極區域610是藉由在形成源極插塞630之前實施二段式有角度植入而形成的。可以修改MOSFET600，致使溝槽605終止於漂移區域604內，而非在基底602內。源極插塞630可以類似方式合併到習知溝式閘極FET內，如第1圖所示之情形。在一實施例中，MOSFET600是藉由將第12A至12D圖的剖面圖所示的製程模組與第13A至13L圖的製程整合在一起而形成的，敘述如下。
對應於第13H至13L圖的製程步驟是以對應於12A至12D的製程步驟加以取代，亦即，在實施對應於第13A至13G圖的步驟之後，閘電極是以類似於第13H圖的方式形成的，除了如第12圖所示沉積的閘極多晶矽凹陷得更深入溝槽內以外。在第12A圖中，實施二段式有角度植入n型摻雜物，以沿著溝槽1205的暴露上側壁形成源極區域1210。其次，如第12B圖所示，一介電層1216a(例如包含氧化物)是以一差別式填滿的方式產生沉積，致使在溝槽內的閘電極1212上比相鄰突丘上會形成更厚的氧化物。在第12C圖中，介電層1216a會受到均勻的蝕刻，藉此一薄層的介電層1216b會殘留在閘電極1212上的溝槽內。在第12C圖中，溝槽1205被填滿了摻雜的多晶矽1217。然後，使用習知技術來形成厚重體區域(未顯示)、源極互連(未顯示)以及其他區域與層，以便完成此單元結構。可以藉由將第12A至12D圖所代表的製程模組與形成溝式閘極FET100的習知製程順序，以類似方式整合在一起，以便將源極插塞1217合併到溝式閘極FET100內。
第7圖是一複合雙重閘極溝槽MOSFET700之剖面圖，其中已經組合有第4至6圖中的結構之優點。如圖所示，n型通道增強區域726、源極插塞730以及LOCOS遮蔽介電層722是合併到MOSFET700內。要知道的是，可以根據設計目標以及性能要求，將此三個特點之任意二個加以合併，而非合併全部三個。上述的MOSFET400、500、600的替代實施例亦可以應用至MOSFET700上。對於熟知此項技術者來說，在看了本案的教導之後，顯然地，可以明白欲形成MOSFET700而對第13A至13L圖所示的製程必須作的修改。
第8圖是一雙重閘極溝槽MOSFET之剖面圖，其中整體地整合有Schottky二極體，以便獲得一整合的MOSFET－Schottky二極體結構800。可以看出，此MOSFET結構是類似於第3圖所示的結構，然而也可以使用第4至7圖中所示的任何MOSFET加以取代。在第8圖中，源極互連(未顯示)包含一Schottky障壁金屬，此金屬不僅接觸源極區域810以及厚重體區域808，而且還延伸在Schottky二極體區域上方且與N區域804b產生電氣接觸。與輕微摻雜區域804b接觸的Schottky障壁金屬可形成一Schottky二極體。在此Schottky二極體區域內的溝槽之結構是等於在MOSFET區域內的結構。Schottky二極體結構可如必要地經常合併到活性區域內，以便達成MOSFET對Schottky區域之間的想要比例。
第9圖是顯示一小型邊緣終端結構，其中整合有雙重閘極溝槽MOSFET。從圖形可以看出，活性區域是終止於一終端溝槽905b內，此終端溝槽包括一用以作為溝槽側壁與底部襯裡的遮蔽介電層以及一填滿此溝槽的遮蔽電極920。如圖所示，在活性區域中的MOSFET結構是類似於第3圖所示的結構，然而也可以使用第4至7圖中所示的任何MOSFET加以取代。
本發明的各種實施例均可以與上述提及的美國專利申請案第11/026276號案的一或更多實施例(特別是遮蔽閘極溝槽結構以及製程)組合在一起，以便獲得具有更優良特性的動力裝置。
雖然上面的敘述已經提供本發明各種實施例的詳細說明，但仍可以產生出許多替代、修改與等效置換。例如，上述製程順序以及製程模組是以雙重閘極(遮蔽閘極)溝槽結構之背景加以敘述，然而，上述各種實施例的優點也可以藉由如第1圖所示的傳統溝式閘極FET之背景而實施出來。而且，要知道的是，在此提到的所有材料種類僅為示範用途而已。而且，在實施例中的一或更多不同的介電層均可以包含低k或高k介電材質。例如，在第一多晶矽沉積之前形成的一或更多介電層可以包含高k介電材質，而在最後多晶矽沉積之後形成的一或更多介電層則可以包含低k介電材質。因此，上述說明不應被用來侷限本發明的範圍，而理應由以下的申請專利範圍加以界定。
100．．．MOSFET
305．．．溝槽
104．．．N－epi區域
320．．．遮蔽電極
15．．．溝式閘極
400．．．MOSFET
106．．．P井
402．．．基底
112．．．閘電極
404．．．N區域
114．．．閘極介電層
406．．．本體區域
116、118．．．介電層
420．．．遮蔽電極
200．．．MOSFET
422．．．遮蔽介電層
204．．．漂移區域
433．．．遮蔽介電層
205．．．溝槽
500．．．MOSFET
212．．．閘電極
526．．．側壁通道增強區域
220．．．遮蔽電極
510．．．源極區域
222．．．遮蔽介電層
505．．．溝槽
224．．．極間介電層
504．．．漂移區域
300．．．MOSFET
502．．．基底
302．．．基底
600．．．MOSFET
602．．．基底
1016．．．遮蔽電極
605．．．溝槽
1124．．．IPD
610．．．源極區域
1205．．．溝槽
614．．．閘電極
1210．．．源極區域
628．．．介電層
1212．．．閘電極
630．．．源極插塞區域
1216a．．．介電層
700．．．MOSFET
1217．．．多晶矽
722．．．LOCOS遮蔽介電層
1302．．．n型外延層
726．．．n型通道增強區域
1304．．．本體區域
730．．．源極插塞
1306．．．堅硬掩罩
800．．．MOSFET－Schottky二極體結構
1308．．．溝槽
1310．．．遮蔽介電層
804b．．．N區域
1312．．．遮蔽電極
808．．．厚重本體區域
1313．．．介電層
810．．．源極區域
1314．．．氮化物層
905b．．．終端溝槽
1316．．．極間介電層
920．．．遮蔽電極
1306．．．ONO複合層
1002．．．矽區域
1318．．．閘極介電層
1004．．．本體區域
1322．．．n型區域
1008．．．溝槽
1324A．．．BPSG
1010．．．氮化物襯墊
1324B．．．部位
1012．．．下溝槽部
1326．．．接觸開口
1113．．．通道增強植入
1322b．．．源極區域
1014．．．遮蔽介電層
1329．．．厚重體區域
1330．．．源極互連層
1322．．．源極區域
第1圖是一習知的單閘極溝槽MOSFET之剖面圖。
第2圖是一習知的雙重閘極溝槽MOSFET之剖面圖。
第3圖是本發明一實施例的雙重閘極溝槽MOSFET之剖面圖，其中閘極溝槽遮蔽電極是延伸到基底內。
第4圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中使用LOCOS而形成遮蔽介電層。
第5圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中具有側壁通道增強區域。
第6圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中具有一源極插塞區域。
第7圖是本發明另一實施例的複合雙重閘極溝槽MOSFET之剖面圖，其中具有側壁通道增強區域、源極插塞區域以極LOCOS遮蔽介電層。
第8圖是本發明另一實施例的雙重閘極溝槽MOSFET之剖面圖，其中整體地整合有Schottky二極體。
第9圖是顯示一小型邊緣終端結構，其中整合有本發明另一實施例的雙重閘極溝槽MOSFET。
第10A至10E圖是根據本發明另一實施例在形成第4圖的MOSFET400中所使用的一製程模組之各個製程步驟時的剖面圖。
第11圖是根據本發明另一實施例在形成第5圖的MOSFET500中所使用的一製程模組所對應的剖面圖。
第12A至12D圖是根據本發明另一實施例在形成第6圖的MOSFET600中所使用的一製程模組之各個製程步驟時的剖面圖。
第13A至13L圖是根據本發明一實施例在形成一雙重閘極溝槽MOSFET中所使用的一範例性製程之各個步驟時的剖面圖。
400．．．MOSFET
402．．．基底
404．．．N區域
406．．．本體區域
420．．．遮蔽電極
422．．．遮蔽介電層
605．．．溝槽

Claims (14)

  1. 一種場效電晶體，包含：一具有第一導電型式的本體區域，係位於一具有第二導電型式的半導體區域內；一閘極溝槽，係延伸通過該本體區域且終止於該半導體區域內；至少一導電遮蔽電極，係設置在該閘極溝槽中；一閘電極，係設置在該閘極溝槽中，且在該至少一導電遮蔽電極的上方但與之隔開；一擴口式遮蔽介電層，係將該至少一導電遮蔽電極與該半導體區域隔開，該擴口式遮蔽介電層延伸在該本體區域下方；以及一閘極介電層，係將該閘電極與該本體區域隔開。
  2. 如申請專利範圍第1項之場效電晶體，其中該半導體區域包含：一基底區域；以及一位在該基底區域上的漂移區域，該本體區域延伸在該漂移區域上方，該漂移區域具有一比該基底區域更低的摻雜濃度，該閘極溝槽延伸通過該漂移區域且終止於該基底區域內。
  3. 如申請專利範圍第1項之場效電晶體，更包含：一具有第二導電型式的源極區域，係位於該本體區域內，該源極區域鄰近該閘極溝槽，該源極區域及一在該本體區域與該半導體區域間的介面一起限定出一通 道區域於其等之間，該通道區域是沿著一閘極溝槽側壁而延伸的；以及一具有第二導電型式的通道增強區域，係位於該閘極溝槽附近，該通道增強區域係部份延伸到該通道區域的一下面部份內，以減少該通道區域的電阻。
  4. 如申請專利範圍第3項之場效電晶體，其中該通道增強區域沿著該閘極溝槽側壁與該閘電極重疊。
  5. 如申請專利範圍第1項之場效電晶體，更包含：一源極區域，係形成於該本體區域中且位在該閘極溝槽的各個側面；一導電材質，係填滿該閘極溝槽的一上面部份，以便沿著各該等源極區域的至少一側壁與該等源極區域產生電氣接觸，該導電材質係與該閘電極隔開。
  6. 一種場效電晶體之形成方法，包含：形成一具有第一導電型式的本體區域於一第二導電型式的半導體區域內；形成一閘極溝槽，其係延伸通過該本體區域且終止於該半導體區域內；形成至少一導電遮蔽電極，其係位在該閘極溝槽內；形成一閘電極，其係位在該閘極溝槽內，且在該至少一導電遮蔽電極的上方但與之隔開；形成一擴口式遮蔽介電層，其係將該至少一導電遮蔽電極與該半導體區域隔開，該擴口式遮蔽介電層延伸 在該本體區域下方；以及形成一閘極介電層，其係將該閘電極與該本體區域隔開。
  7. 如申請專利範圍第6項的方法，其中形成該閘極溝槽的步驟係包含：形成一上溝槽部，該上溝槽部係延伸至一半導體區域內達第一深度；以一材質的保護層加襯該上溝槽部的一側壁，致使沿著該上溝槽部之至少一部分底壁的半導體區域維持暴露狀；以及形成一下溝槽部，其係通過該上溝槽部之底壁的暴露部份，且該材質的保護層保護該上溝槽部的該側壁，該上溝槽部具有比該下溝槽部更大的寬度。
  8. 如申請專利範圍第7項之方法，其中形成該擴口式遮蔽介電層的步驟係包含：形成一第一絕緣層，其係沿著該下溝槽部的一側壁及一底壁；移除該材質的保護層；以及形成一第二絕緣層，其係沿著該上溝槽部的該側壁，該第一絕緣層具有比該第二絕緣層更大的厚度。
  9. 如申請專利範圍第8項之方法，其中該第一絕緣層是由矽的局部氧化(LOCOS)而形成的。
  10. 如申請專利範圍第7項之方法，更包含：形成一導電遮蔽電極於該下溝槽部中； 形成一極間介電層於該導電遮蔽電極上方；以及形成一閘電極於該極間介電層上方。
  11. 如申請專利範圍第6項之方法，更包含：執行一具有該第二導電型式的雜質之有角度的側壁植入，以在該溝槽附近形成一通道增強區域；以及形成一具有該第二導電型式的源極區域於該本體區域內，該源極區域及一在該本體區域與該半導體區域間的介面一起限定出一通道區域於其間，該通道區域係沿著一閘極溝槽側壁而延伸，且該通道增強區域係部份延伸至該通道區域的一下面部份內，以減少該通道區域的電阻。
  12. 如申請專利範圍第11項之方法，其中該通道增強區域係自行對準至該遮蔽電極。
  13. 如申請專利範圍第6項之方法，更包含：執行一雜質的兩段式有角度植入以在該溝槽的各側上形成源極區域；形成一介電層於該閘電極上方；以一導電材質填滿該溝槽，致使該導電材質與該源極區域產生電氣接觸。
  14. 如申請專利範圍第13項之方法，其中該導電材質包含有摻雜的多晶矽。
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US20110177662A1 (en) 2011-07-21
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