TW533604B - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
TW533604B
TW533604B TW090132753A TW90132753A TW533604B TW 533604 B TW533604 B TW 533604B TW 090132753 A TW090132753 A TW 090132753A TW 90132753 A TW90132753 A TW 90132753A TW 533604 B TW533604 B TW 533604B
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TW
Taiwan
Prior art keywords
light
emitting device
patent application
scope
item
Prior art date
Application number
TW090132753A
Other languages
English (en)
Inventor
Koichi Ota
Atsuo Hirano
Akihito Ota
Stefan Tasch
Peter Pachler
Original Assignee
Toyoda Gosei Kk
Toridonic Optoelectronics Gmbh
Litec Gbr
Leuchstoffwerk Breitungen Gmbh
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Application filed by Toyoda Gosei Kk, Toridonic Optoelectronics Gmbh, Litec Gbr, Leuchstoffwerk Breitungen Gmbh filed Critical Toyoda Gosei Kk
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Publication of TW533604B publication Critical patent/TW533604B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7734—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77344—Aluminosilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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    • C09K11/774—Borates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
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    • G02B6/0073—Light emitting diode [LED]
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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Description

533604 五、發明說明（1) 技術領Μ 本發明為關於具有發光元件之發光裝置，特別為該發光 元件為於弟一光譜區域中發光，且，至少含有來自驗土金 屬原石夕酸鹽群或其螢光體群並且再具有吸收該發光元件之 刀發光、且於另外之光譜區域發光之榮光體的發光裝 置。 " 背景拮衛 該發光裝置例如為無機LED、有機LED、激光二極管、無 機厚膜電激發光薄片或無機薄膜電激發光零件。 LED尤其以哥命長、不佔地方、衝擊強、並且於狹窄的 光譜帶中發光之特徵而引人注目。 多數的發光色，特別為廣泛光譜帶的多數發光色，於 LED情況之活性半導體材料之固有發光下並不能實現發 光、或僅以非效率地實現發光。此情況尤其適用於取得白 色發光之情況。 若根據公知技術水準，則半導體中本來無法實現的發光 色，可經由色轉換技術而取得。 本質上此色轉換技術為根據下列原理，即，於LEd塑膜 上配置至少一個螢光體。該螢光體為吸收此塑膜之發光， 且其後將光激發光的光線以另外之發光色放出。 螢光體基本上可使用有機系，且亦可使用無機系。無機 顏料之本質上的優點為比有機系之耐環境性更高。關聯於 無機LED的壽命長度，因此若考慮色安定，則以無機系為 有利的。
90132753.ptd 第6頁 533604
有利使用無機螢光顏料，代替 成長期間（Wachstumzeiten)之 進入矩陣中，且再被置於LED 關於加工之容易度，可知 於取得必要膜厚上具有過長 有機螢光喷塗系。該顏料為 塑膜上。 由滿足上述要求之無機材料數且少之理， 許多情況使用來自YAG類之材料做為辛 口 ^ 曰 a m、，θ w 竹竹做為色轉換用之顏料。但 疋’此材料具有僅於該材料為夫 ^ i ^ ^ 付局禾滿56Onm之發光最大值之 巧中顯不兩效率之缺點。由於此類理由，使用與藍色二 極管（450至490nm)組合之YAG海料 目丨丨叮〜 ” ^ Λ ^ τ ^ <ΪΛΐ1顏科，則可實現僅為冷感之 ^ :光色。特別於照明領域中之㈣，關於色溫度及色 對於光源之要求更高。此要求為目前所使用之白 色LED所無法滿足的。 更且，由W0 00/33389得知，於使用藍色LED取得接近白 色之光上，尤其使用BaJiO* : Eu2+做為螢光體。Ba2Si04 : Eu2+之發光為5〇5nm，即為較短之波長，其結果，此光 著冷感。 於s· Η. M· Poort 等人之論文，，0ptical pr〇perties 〇f Eu2+-akt 1 vated. 2 97頁中，研究經^；#活化之Ba2Si〇4及磷 酸鹽，例如KBaP〇4及KSrP〇4之性質。又，於該文獻中，確 認B^SiO4之發光為50 5nm。所研究之二個磷酸鹽之發光為 相對地於本質上為更短之波長（42〇nm至43〇1111])。 本發明之課題為令上述之發光裝置，經由螢光體將第一 光源之紫外線或藍色放射顯著良好吸收，則可變更成於高 的光發光效果下，實現不同光顏色及高顏色再現之程度，
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$ 2，一般照明用之光源中常用的cie 内置特別有利於約，和7_之間之極近= 之揭主 上述課題為經由上述之發光裝置 ’則於且無备儿此+ a ^...... 右·根據本發 明 光 則於具備氮化物半導體所構成之發光 、、 ，件所發出之一部分光，並且：出和吸收發 丹百與此吸收氺夕油 同波長光之螢光體的發光裝置中，罄本 ' 化爻认丄人府a a , T資先體為由經銪活 <驗土金屬石夕酸鹽所構成。
螢光體為式： ^2-x~y)sr〇 . x(Ba,Ca)0 · (1-a-b-c-d) i〇2 aP2 05 bAl2〇3 cB2 03 dGe02 : y Eu2+ 式中，0 <x <1. 6、 〇· 0〇5 <y <〇· 5、 0 ^ \a、b、c、d<0.5) (2示之經二價銪所活化之鹼土金屬原矽酸鹽和/或 、x〜y)BaO · x(Sr，Ca)0 · (l-a-b-c-d)
Sl〇2 · aP2 05 bAl2〇3 cB2 03 dGe02 ：y Eu2+
式中，0· 01 <x <1. 6、 〇· 0〇5 <y <〇· 5、 0 、b、c、d<0.5) 戶斤一 不之鹼土金屬原矽酸鹽亦可。此時，有利令a、b、c及d 之值中之至少一者為大於〇〇1。 印’使用矽酸鳃或矽酸鋇與矽酸锶原矽酸鹽之混合裂式
533604
五、發明說明（4) 代替矽酸鋇之情形中，意外地發現所放射之光波長變長。 石夕部分以錯予以取代及加成存在之P2〇3、Al2〇3和/或 對發光光譜具有影響，其結果，該發光光譜可於分別使用 之情況中調整至最適。 自經二價銪和/或錳活化 體和/或來自Y(V、p、si) 前述之發光裝置為有利具有來 之鹼土金屬鋁酸鹽群之其他螢光 〇4 : Eu或下式：
Me(3-x-y)MgSi2 03 : xEu，yMn (式中， 〇·〇〇5<χ<〇·5、 〇·〇05<Υ<〇·5、
Me為表示3&和/或^和/或ca) 所示鹼土金屬一鎂—二矽酸鹽·· Eu2+、Mn2+群之再其他之紅色 發光的螢光體。 更且’少量之一價離子、特別為！i化物併入螢光體袼子 中’則察見有利於結晶化度及放射率。 、第一光譜區域為3 0 0至5 0 0 nm時，為有利的。於此波長區 ά或下’本發明之螢光體可被良好激發。 更且’第二光譜區域為430nm至650nm時，為有利的。配 合此情況，可取得較純的白色。 乂有利之發光裝置為放射出具有Ra值>72之白色光。 佳實施形熊 若根據本發明之第一實施態樣，則發光裝置為具有二個 同的螢光體，此時，至少一者為驗土金屬原石夕酸鹽營光
9013如.则
533604 五、發明說明（5) 體。如此則可令白色色調特別正確地調整。 根= :光f:置之機械性實施存在許多可能性。若 ^之某板上了且罄，將1個以上之LED晶片配置於反射鏡 散。土 且，螢光體為於反射鏡上所配置之透鏡中分 但是’亦可將1個以上之I FD曰H 上，且，將蒂先雜泠欲 曰曰片0己置於反射鏡内之基板 上且將螢光肢塗佈於該反射鏡。 有利令該LED晶片以且右詁样彤业+、泰口口 早C2右植巧糾壯八有豉樣形狀之透明封裝用化合物 真^封袭用化合物一方面為形成機械性保護， 且，另一方面該封裝用化合物為再改善 模之光予以改善的發光）。 干化貝（將LED塑 該螢光體可於封裝用化合物中分散，且經由此封裝用化 5物，儘可能不會封入氣體地，令基板上配置之led晶片 與聚合物透鏡結合’此時，該聚合物透鏡與該 曰曰 物最大僅具有O.i差異之折射率。亦可經由該封裂用化合口 物將LED塑模直接封閉，但是，亦可令該UD以透明的封裝 用化合物予以充填（即，於此情形中存在含有透明的'^ 用化合物與螢光體之封裝用化合物）。經由類似的折射、 率，則幾乎無邊界面反射所造成之損失。 有利令聚合物透鏡為具有球形成橢圓形之凹坑，該凹坑 為經由前述的封裝用化合物而被充填，其結果，UD陣列 為因聚合物透鏡而被稍有距離固定。如此處理，則可減少 機械構造之大小。 / 為了達成螢光體的均勻分布，較佳令螢光體於無機之基
90132753.ptd
第10頁
533604 五、發明說明（6) 質中懸浮。 所於使用二個螢光體之情形中，二個螢光體為於各別之基 2中懸浮，此時，較佳令此些基質於光傳送方向上互相以 前後配置。經此則令基質之濃度為比不同螢光體一起分散 之情況更為減少。 其次，說明本發明第一實施態樣中之製造螢光體的重要 工程。 所為了製造矽酸鹽螢光體，乃將根據所選擇組成之起始物 1鹼土金屬被酸鹽、二氧化矽及氧化銪之化學計量性份量 緊密混合，且，以製造螢光體所常用之固體反應，於 =氛圍氣下:以溫度110(TC&14〇(rc轉換成所欲之螢光，、 :。此時，對於結晶度而言，以反應混合物中之比例少、 n j :〇. 2莫耳之比例下添加氯化銨或其他鹵化物為 視而要，亦可將一部分矽以鍺、硼、鋁、磷予以取 代，且亦可將一部分銪以錳予以取代， 熱而分解成氧化物之上述元素之化合物的；應 仃。於此情形中，維持反應條件之範圍。 所侍之矽酸鹽為以波長510nms 6 0 0nm放射，且且 11 Onm為止之半值寬度。 /、有 自上述群之一個螢光體或來自上述群組 爱无體、或者、缔士 -押》亡X /丄、h , 又 1^# A ^ ^ Y(V . p s'：.； ^ ^ ^ ^ ^ ^ 光體、來自Y2 02 s ·· Eu3+螢么體二：：：替、：：色發光之螢 可取得I有;2定羞EUA邊先體群之常用螢光體的組合，則 有所疋義之色溫度的發光色及高的色再現性，此
533604 五、發明說明（7) 為如下列實施例所示。 T = 2 778K(464nm + Sr1 4Ba〇 6Si04 ：Eu2+) ；x =0.4619 ^y = (K 4247、Ra =72、 T = 2 9 50K(464nm + Sr1 4Ba〇 6Si04 · Eu2+) ； x = 0. 4380 " y = 0. 4 0 0 4、Ra=73、 T = 3497K(464nm + Sr1 6Ba〇 4Si04 ： Eu2+) ； x = 0. 4086 - y = (K 3 996、Ra =74、 T=4183K(464nm + Srh9Ba0.08Ca0.02SiO4 :Eu2+); x =0· 3762、y =0· 3873、Ra =75、
T = 6624K(464nm + Sr1.9Ba002Ca008SiO4 ：Eu2+)； x =0. 3101、y = 0. 330 6、Ra =76、 T^^SSSKUGhm + SruBauSiC^ zEi^ + SruBauSiOi :
Eu2+) ;χ=0·3135、y=0.3397、Ra=82、 T =4216K(464nm + Sr1.9Ba〇.〇8Ca〇.02Si04 ：Eu2+))； x =0. 3710、y =(K 3696、Ra =82、 3954K(464nm + Sr16BaQ.4Si04 zEi^ + SruBauSiC^ :
Eu2+ + YV04 :Eu3+) ;x=0.3756、y=0.3816、Ra=84、
T = 6489K(464nm + Sr1.6Ba0>4SiO4 ： Eu2HSr0>4Ba1>6SiO4 ： Eu2H 鋁酸鋇鎂：Eu2+); x =0. 3115、 y = 0. 33 9 0、Ra =66、 T = 5 0 97K ( 4 64ηο + 8Γ! 6Ba〇 4 (S i〇 08B0 〇2 ) 〇4 :
Eu2HSiY6Ba14Si04 :Eu2+) ;x = 0.3423、y=0· 3485、Ra 二 82 ^
90132753.ptd 第12頁 533604 五、發明說明（8) T = 5084K(464nm + Sr1 6Ba〇>4 (Si〇 08B0 02 )〇4 ： Eu2+ + 、y
Sr0.6Ba14SiO4 :Eu2++鋁酸勰鎂：E2+) ;χ=〇· 343〇 0.3 53 1、Ra =83、 T = 3369K(464nm + Sr1 4Ba〇>6Si〇 95Ge〇 O5 04 : Eu2+)； x =0. 4134、y = 0. 39 5 9、Ra =74、 T = 2787K( 466nm + SrL4Ba0>6Si0>98P0 02 〇4 〇1 ：Eu2+)； x = 0. 4 6 3 0、y= 0.4280、Ra=72、 T =2913K(464nm + SrL4Ba〇.6Si 0 98 A 1 0 02 〇4 ：Eu2+)； x = 0. 4425、y= 0.4050、Ra=73。 於本發明之一個實施態樣之情形中，色轉換為如下實 施。 將1個以上之LED晶片於基板上組裝。於該LED上直接（一 方面為保護LED晶片，另一方面為令LED晶片内笋生之光 良好釋出）將封裝用材料以半球或半橢圓之型式配置。此 封裝用材料亦可分別包含各塑模，且該封裝用材料亦可全 部之LED以共通之-個型式。將如此處理裝備之基板設置 於反射鏡内，或將該反射鏡覆蓋該LED晶片上。 於該，射鏡中設置透鏡。—方面該透鏡為使用於保護裝
Li;:方面為於該透鏡中混入營光體顏料。如此處理 .ψ =二不透明且造成黃色顏色之映像。通過該透鏡所 二M = (包含紫外光）為經由光學零件中通過時，進 >ί丁轉換成長波光朵彳 ^ Sz ^ A A λ 、 。”、，、口果’將藍色光和黃色光合 併取付白色顏色之咏後。Α 吐你田、止#认f 例如於平面平行板間所產生之導 波作用造成的損失，矸細& n 、天 了、、二由邊透鏡之不透明性及擴散性而
533604 五、發明說明（9) 減少。再經由反射鏡，僅令已調整之光線入射 其結果，全反射作用由開始以後減少。 W $ % 、另外，亦可於各LED晶片上覆蓋反射鏡，且，該反射鏡 為被充填成圓蓋形，且透鏡為被配置於各個反射鏡上或此 裝置之全體上。 製造照明之發光裝置較佳使用LED陣列代替單一 iLED。 其他實施態樣之情形中，色轉換為以⑽晶片 於基板上直接組裝之led陣列如下實施。 =ED陣列使用封裝用化合物（例如環氧樹脂），接黏至 =他材料（例如PMMA)所構成之透明聚合物透鏡。該聚合物 ，鏡及該封裝用化合物之材料為儘可能折^ LI透= t地選擇。該封裝用化合於 ♦ 口物透鏡之取大且球形或橢圓形之凹坑 對於色轉換物質於該封裝用化合物 =式 二，^此類型式，保證可取得無關於=二=的另 聚合物透鏡。 輯名用化合物接黏至前述之 對於使用至少二個不同螢光體^ ^ ^ ^ ^ ^ ^ ^ 較佳令此些螢光體分別分散且重疊。其特土貝中’其 之發光色為經由複數的色轉換 ς θ」：〗用於最： 長波之發光色為經由一個發光= 之組合。即，最 過程之經過如下^，生成，此時，該發光 下即以弟一螢光體將LED發光吸收、第 90132753.ptd 第14頁 533604
一螢光體之發光、 收、及第二螢光體 佳將各個螢光體於 亦可比各種螢光體 度。 以第二螢光體將第 之發光。特別，對 光傳送方向上，互 單一分散之情況更 一螢光體之發光吸 於此種過程而言，較 相為前後配置，藉此 加減少螢光體的濃 土發明不限定於上述實施例。帛光體亦可被編入聚合物 （或其他之光學零件）中。亦可將該螢光體於led塑模 直接配置，且亦可於透明的封裝用化合物之表面上配 置。又，該螢光體與分散粒子亦可共同編入一個基質中。 藉此，可防 >止於基質中的沈降，且，保證均句的發光。 以下，更詳細說明將具有前述光激發光效果之螢光體使 用於發光二極管（L E D )燈之例。 圖為本發明發光裝置之第二實施形態LED燈的模式截面 圖，不出所謂的透鏡型LED燈。GaN系半導體所構成之藍色 LED4，為於形成擔任令藍色LED發光於LED燈上方反射之反 ，鏡職務之杯10的金屬電子管心柱3上，透過支柱5而安 展將1色L E D 4之一者電極與導線框2經由金製之接合電 線7予以接續，且另一者電極與導線框丨經由金屬之接合電 線6予以接續。為了固定藍gLED4，以塗覆材料之内部樹 月曰8覆盖杯1 〇。更且’將形成導線框2及金屬電子管心柱3 之導線框1 ’以塑模材料之外部樹脂9予以封裝。因此，藍 色LED4為由内部樹脂8及外部樹脂9予以雙重封裝。尚，金 屬電子管心柱3與導線框丨亦稱為支柱導線。又，關於藍色 LED4之詳細說明為於後述。
90132753.ptd
533604 五、發明說明（η) 一 面ί: Hi!之内部樹脂8為被充填至比杯1 °上緣水平 氐之杯1 0内部。藉此，於複數LED接近配置之情 得解I ί ί生LED間的混色，且以LED實現平面顯示並乂可取 付％像度良好的晝像。 上j取 二部樹脂8為使用於固化後呈透明的聚矽氧樹脂 =:又，内部樹脂8為混入前述經二價銪活化之驗 11 體(广為驗Λ金屬原石夕酸鹽做為主成分的營光體 Ϊ 达邊先體11為如别述般，具有光激發光效果，且誃备 光。為吸收發出的光，並發出與吸收光之波長不同波=之 為二呷：：:吏用二熔點玻璃代替聚矽氧樹脂或環氧樹脂做 树知8。低熔點玻璃為耐濕性優良並且可阻止 ®此侵入藍色LED4。更且，因為來自藍&LED4之發光不\ J收且就其原樣穿·’故不需要預估吸收部分而‘：：被 又，亦可於混入前述螢光體丨丨之内部樹脂8之聚矽 以氧樹？或低溶點玻璃中’再混入擴散材料 '經二 藍色tED4之光線易接觸螢光體11，且可令榮光體 $ 4 *色之光直增加。此擴散材料並無特別限定，可使用 热知之物質。 〜 』便用 外部樹脂9可使用固化後呈透明的環氧樹脂。 脂支$由易操作方面而言’則可使用環氧樹脂等各種樹 支柱5中所用之樹脂為具有接黏性，且即使於極小駐 533604 五、發明說明（12) 色LED4之側面乘載支柱5，亦具有不會令側面各声 之絕緣性的樹脂為佳。 s ]短路 支柱5為了將來自藍色LED4之各向同性發出之 表面之反射鏡反射並於LED燈之上方放出， 透明之樹脂。特別，將LED燈使用白色夺之亦％ + 用 亦可為不妨礙白色光之白色。 系之先源時，支柱5 又’於支柱5中亦可含有螢光體n。使 燈，比未使用螢光體UiLED燈之光密度更^極浐㈣=LED 即，由藍色LED4所放出之光因為不透才而炎回。 Ϊ = :ί光二經由藍色_附近設= 出且向同性重新放 i部八夕批玄、， 鏡被反射，且亦經由led燈 ^ =刀之=射率差而被反射。因此，藍色LED4附近之光為 口P分被緊密關閉’且藍色LED4附折夕止Α ώ：上 、
燈為高亮度發光。 附近之“度極高，令LED 祐ϊ n4同性發光’且此光即使於杯10之表面亦 Ϊ 故=為透過支柱5中，故支柱5中之光密度極 :之=二' 5中含有螢光體11，則藍色㈣4所發 螢光體11所反射，又，以支柱5中之 生式各向同性地重新放出。如此，若 ”柱5中亦:含有螢光體u，則_燈為更高亮度。 声夕Ϊ FT) I 1用含有Ag等無機材料之樹脂。1述高亮 :用产;W楚日守間使用’則因於支柱5和内部樹脂8中’ 衣乳3月曰之树脂’故藍色LED4極附近之合成樹脂支 90132753.ptd 第17頁 五 發明說明（13) ----—____ 和内部樹脂8為被著色成茶色 效率降低。特別，誌色LED …、色且惡化，並且發光 ㈣大為降低。的著色乃令發光 候性，且亦被要求接好糾 求對於藍色LED4之光為耐 惡化可於支柱5中使用'含有AgY無^等材而光所造成之樹月旨 =念柱5可將Ag糊料與螢光體；;於= 於金屬電子管心柱3卜 、又柱糊科中化合，且 簡單形成。 機器塗佈並且接黏LED4則可 料之Γ機:了脂含二之上氧：^ 樹脂之密合性良好，X ^支柱5中之無機材料必須與 因此，令樹脂中含有—種二：藍色LED4之光而惡化。 鋁、石夕石、氧化鈦、氮化_彡自銀、金、鋁、銅、氧化 機材料。特別，以銀、 虱化錫、氧化鋅、ITO之無 且具有導電性，故可適用於#呂、銅等因為令放熱性提高， 又，氧化！s m ^期待導電性的半導體裝置。 持高反射率。益 =、氮化删等為耐候性強且可維 ^作成球狀= 性和電性導電等而令其 了機材料含量可對放埶赍^種形狀。支柱5樹脂中之 ^ ’樹脂中之無機材^含:”導性等進行各種調節。但 费合性降低，故以5重量：：夕’則樹脂之惡化少，但因 重量％以上至80重量％以°，上，80重量％以下，且若為60 如此於支柱5中，，則最適於防止樹脂之惡化。
Ag等無機材料，則可抑制因藍色LED4發光之光而惡化之 P制支柱5之樹脂因光所造成之惡 533604 發明說明（14) 化，故惡化所造成之著色部位少並可防止發光效率之降 低’可取得良好的接黏性。又，亦可經由支柱5中含有螢 光體11 ’則可令LED燈之亮度更加提高。 藉此，可提供即使於高亮度、長時間之使用中亦可令發 光效率之降低極少之可高亮度發光的LED燈。更且，於使 用熱傳導性良好之材料下，可令藍色LED4之特性安定化， 且亦可減少色斑。
圖2為示出圖1所示LED燈之藍色LED4的層構造。藍色 LED4為例如具有藍寶石基板41做為透明基板，且於^此誌寶 石基板41上，以M0CVD法等將做為氮化物半導體層之例^如、 緩衝層42、η型導電層43、η型覆蓋層44、 MQW(multi-quantum well)活性層 45、ρ 型覆蓋層 46、及ρ 型V電層4 7依序形成，並以濺鍍法、真空澱積法等，於ρ 型導電層47上之全面形成透光性電極5〇，於透光性電極5〇 上之一部分形成ρ電極48、及η型導電層43上之一部分形 η電極4 9。 夕 緩衝層42為例如由Α1Ν所構成，且η型導電層43為例如 GaN所構成。
—η型覆盍層44為例如由AlyGapyNCO gy<l)所構成，p型覆 蓋層46為例如由AlxGaixN(0 <χ<1)所構成，p型導電層u 為例如由AlzGai—ζΝ(〇9<1、z<x)所構成。又，1)型^蓋 層46之帶間隙為大於η型覆蓋層44的帶間隙。^型覆蓋声 及Ρ型覆盍層46可為單一組成之構成，且亦可如超袼子構 造般，將彼此組成不同之厚度100Α以下的上述氮化物半
533604 五、發明說明（15) 導體膜疊層所構成亦可。由 可防止膜φ & a 將膜厗作成1 〇〇 A以下，則
J防止膜中發生裂痕和結晶缺陷。 J MQW活性層45為由InGaN所構 構成之複數阻擋層所構成…如—所 及阻擋層之厚ώ^1ΠΛ。 成赵礼子層般，井層 為钍日性所& ^為以下、較佳為60〜7〇 Α。lnGaN因 ::曰曰杜貝比其—1GaN等含有M之氮化物半導 ^文將InGaN使用於構成活性層45之層中，則可 = 氮化物半導體層全體難發生裂#。 且曰之各 丄τ广 雖知玍衣辰尚，MQW活性層4 5亦玎 由nGaN所構成之複數的井層、和AlGaN所槿& >. 1 Γ 由A1InGaN所構成之複數的井層、和 =旦aN戶斤構成之複數阻擋層所構成。但，阻撞層之帶間 ί永月b里為大於井層之帶間隙能量。 尚，由MQW活性層45開始的藍寶石基板41側，例如，於^ 型導電層43之緩衝層42側亦可形成反射層。又，反射鏡亦 可於MQW活性層45所疊層之藍寶石基板41的表面與反側表 面上形成。反射層以對於活性層45所釋出之光具有最大反 射率者為佳，例如，可由A1所形成，且亦可由GaN系薄膜 之多層膜所形成。經由設置反射層，則可將來自活性層45 之放出光以反射層予以反射，且令來自活性層4 5之放出光 的内部吸收減少，可增大對於上方的輸出光，減低對於支 柱5的光入射並且防止其光惡化。 如此所構成之藍色LED4之發光波長的半值寬度為5〇nm以 下、較佳為40nm以下。又，藍色LED4之波峰發光波長為 380nm至5 0 0nm之範圍，例如為450nm。
90132753.ptd 第20頁 533604 五、發明說明（16) " ~----- 對於如此構成之LED燈，若於導線框i、2間外加電壓， 則藍色LED4為發出450ηπι波長之藍色光。藍色光為激發内 部樹脂8中之螢光體n，且所激發之螢光體n為發出 560^ 570、nm之黃色光。内部樹脂8中之藍色光與黃色光混合 之光為通過外部樹脂9漏出至外部，此混合光以人類眼睛 察見白色，結果，察見LED燈為發光成白色。即，螢光體 11為經由藍色LED4所發出之藍色光而被激盘該 =係，發出比藍色波長更長之黃色。本發明；、= e複數的螢光體，而可取得更接近純的白色。 『為，出本發明發光裝置之第三實施形態之面狀光源 用2 =之構成，（a)為平面圖，（b)為（a)之A_A線截面圖。 柄i Λ所Λ之面狀光源用裝置為例如適用於做為液晶面 光，i北ί ί ’且由液晶面板之裏面側對液晶面板照射 】=先性液晶面板之文字和畫像給與明亮度和對比 度，k向其辨視性，具備下列要素所構成。 即，面狀光源用裝置為具備透明之大約為矩狀的 Λ 的藍色LED4、和除了導光板7〇之光 射出面7〇a包圍其他面並將導光板7〇所安裝之光 之光反射盒71、和於導光板7〇之射出面7〇 形成微細凹凸模樣的光擴散模樣 先板70上女叙覆蓋射出面7〇 、
之透明薄膜74所構成。 1且於Μ合有營光體U 又，各藍色LED4為透過接合電線及導線框等之電源供給 90132753.ptd 第21頁 533604 五、發明說明（17) Γί i?t段ΐ:: 5給指定電壓之驅動電壓般地安裝於光反 光板70之内立ϋ吴樣73為將來自藍色LED4所射出之光於導 无扳7 0之内部擴散。 $ 對於如此構成之面肤杏、、盾 # 驅動電遵，則射出來自置：右於各藍色LED4外加 亦故认道止4 自所驅動之各藍色LED4之光。此射出 成:氺妒坍^样中以指定方向前進，且接觸反射面72所形 過薄膜7:1 = 並且—邊反射擴散一邊由射出面7〇3通 於通過細時，;色LED4之射出光為 波長而射出。藉此令薄二所吸…同時轉換 ,± ^ 寻膜74之月,j面所硯測之發光色為合成 匕二先之顏色，例如由前述之原理而言為呈白色。 如此，若根據第三實施形態面狀光源用裝置，則 ^LED4之射出光為人射至導光板7()，且此人射光—邊以導 =70之反射面72所形成之光擴散模樣予以反射擴散，一 邊由射出面7〇3射出至薄膜74 ’且於此薄膜74中， 八 =為被螢光=11所吸收，㈤時轉換波長而被射出：刀 先河般，即使未使用紅、綠、藍各色之，僅以 =亦：將發光色作成白色。又，因為以營光⑴「色 腿不直接接觸之構造，故可長期抑制螢光體k亞：色 且可經過長期保持面狀光源之指定色調。 心 二匕:卜，經由改變薄膜74中所含有之；光體㈣ 僅可貫現白色’且亦可實現其他色之發光色。若將薄膜74 之女裝構造作成易脫除構造’並且準備數種含有不 登光體U之薄膜74 ’則僅將薄膜74更換即可輕易令面狀： 90132753.ptd 第22頁 533604 五、發明說明（18) 源之色調可變。 又、’螢光體1 1除了於薄膜74中含有以外，若於薄膜74之 表面塗佈含有，則可取得同樣之效果。 又]藍色LED4為藉由埋入導光板7〇中，而與導光板7〇予 以光學性接續，此外，亦可將藍色LED4接黏導光板7〇之端 面’將藍色LED4之發光以光纖等光傳導手段導至導光板7〇 之端面’將藍色LED4與導光板7〇予以光學性接續。又，藍 色LED4即使為1個亦可。 a 圖4為示出本發明發光裝置之第四實施形態之 SMD(Surface Mounted Device)型的LED 燈。 型之LED燈為具有下列構成。覆蓋具有絕緣性之玻璃 壞氧樹脂基板8 〇之兩面，且，以電性分離形成之二個金所 作成之圖型配線81、8 2形成金屬框，並於圖型配線8 1、8 2 亡設置具有塑膠製杯83a之框體83。杯83a以其表面成為將 監色LED4之放出光予以反射之反射鏡。圖型配線81、82為 非對稱’且於圖型配線82之上面為形成至框體83所形成空 間之底部中央為止，另一者之圖型配線81為僅於框體8 3所 形成空間之底部少許露出。 監色L E D 4為於圖型配線8 2之上面，以含有銀充填物之環 氧樹脂糊料84予以固黏。藍色LED4之p電極與圖型配線82 為經由金製之接地電線6予以接續，且藍色LED4之η電極與 圖型配線8 1為經由金製之接合電線7予以接續。 框體83之杯83a所形成之空間内充填於固化後呈透明的 封展』8 8。經由封裝劑§ 8將备色l E D 4固定。封裝劑8 8為混
五、發明說明（19) 入鈾述經二價銪活化之驗土 原矽酸鹽做為主成分之螢光 聚碎氧樹脂。 金屬原石夕酸鹽和/或鹼土金屬 體11 °封裝劑88為環氧樹脂或 汴匕入逢光體11之封裝劑8 8 空間内充填一虹，y女 於框體83之杯83a所形成之 填。 4體8 3之上緣至下方部位充 尚，W述混入螢光體^之封梦 料。經由擴|姑料 对衣刈Μ亦可再混入擴散材 :十、甶擴放材#，可將來自發光藍色LED4之光予以μ 射成為散亂光，故來自藍色Lj;d彳β | ^ & 5 可八罄# 八丄a aLED4之先易於接觸螢光體U， J 7堂无體1 1所發光之弁景掛ι ,, _ ^ 尤里J日加。此擴散材料並盔特別m 定，可使用習知物質。 1 W 1…、符別限 門ίΓΐί所構成之SMD型之L_，若於圖型西己線81、82 間外加電壓，則藍色LED4為發出45Qnm波長之q 82 色光為激發封裝劑88中之螢光體n，且所激發之螢光體 為發出560〜57〇11„1之黃色光。封裝劑88中之藍色光與黃色 光混合之光為漏出至外部，此混合光以人類眼睛察見白 色，結果，察見L E D燈為發光成白色。即，螢光體11為_ 由藍色LED4所發出之藍色光而被激發，與藍色具有補〃色關 係，發出比藍色波長更長之黃色。本發明為經由組合複數 的螢光體，而可取得更接近純的白色。 圖5為示出本發明發光裝置之第五實施形態之LED燈。本 實施形態為將藍色LED4保護免受到靜電等之過電壓，且對 圖1構成之光源追加過電壓保護元件9 1為其構成。 如圖5所示般，過電壓保護元件9丨為被晶片化成為與誌 533604 、發明說明（20) LED4同程度之大小，且被配設於藍色LED4與支柱5之 二°於本貫施形態中，與圖1之情況不同，因為後述之理 ’，將藍色LED4予以倒裝接合（f lip chip)組裝。過電 ^保4 το件91為具備與藍色LE])4及導線框1接續用之電極 92 93。電極92為被設置於圖2所示之P電極48之對向位 置又，電極93為被設置於n電極4 9之對向位置，更且為 了易與接合電線6接續，乃於過電壓保護元件91之側面延 伸形成。過電壓保護元件91上之電極92、93為分別透過Au 凸起物94a、94b而接續至藍色LED4之？電極48、n電極49。 此過電壓保濩元件9 1若外加規定電壓以上之電壓，則可使 用於吸收通電狀恶之齊納二極管（zener di〇de)、脈衝性 電壓之電容器等。
圖6為不出於過電壓保護元件9丨使用齊納二極管時之接 續電路。做為過電壓保護元件91之齊納二極管95為對藍色 LEDj以電性並列接續，且藍gLED4之陰極和齊納二極管 之陽極為接續。導線框丨與導線框2之間外加過大電壓時， 其電壓若超過齊納二極管95之齊納電壓，則藍&led4之端 子間電壓為保持於齊納電壓，無法變成齊納電壓以上。因 此，可防止對藍色LED4外加過大之電壓，保護藍色““免 受到過大電壓，並且防止元件破壞和性能惡化之發生。 圖7為示出於過電壓保護元件91使用電容器時之接續電 路。做為過電壓保護元件91之電容器96可使用表面組裝用 之晶片（chip type c⑽ponent)。此類構造之電容器“為 於兩側設置帶狀電極，此電極為並列接續至藍色led4之陽
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五、發明說明（21) 極及陰極。導線框1與導線框2之間外加過大電壓時，經由 此過大電壓令充電電流流至電容器96，使得電容器96 2 , 子間電壓瞬時下降，對於藍色LED4之外加電壓不會上而 故可保護藍色LED4免受到過電壓。又，外加含有高周成 分之雜訊時，亦因電容器96可作用為分流（bypass)電衮^ 之機能，故可排除外來的雜訊。 口口 如上述， 合組裝。其 電壓保護元 藍色LED4與 為接地數增 的接觸、斷 色LED4予以 41之下面做 電壓保護元 色LED4 。尚 電極5 0可代 極48之表面 體，並將其 如以上所 光源的基本 靜電等外加 化。又，因 將藍色LED4 藍色LED4為相對於圖！進行上下反轉之倒裝接 理由為因設置過電壓保護元件91，故必須將過 件91與藍色LED4兩者予以電性接續。假定，將 過電壓保護元件91分別以接合電線接續時，因 加^故生產性降低，又，因為接地電線彼此間 線等增加，故恐導致信賴性降低。於是，將藍 倒裝接合組裝。即，以圖2所示之寶藍色基板 為最上面’且Ρ極48透過Au凸起94b而接續至過 件91之電極93，且接合電線6、7不會接續至藍 μ將藍色LED4倒裝接合時，圖2所示之透光性 :非，光性之電極。又，將n電極變厚成與p電 同一南度’或者，對η電極42接續新的導電 做為電極亦可。 ^明般’若根據圖5之構成，於圖1所示構成之 ^果亡加上設置過電壓保護元件9 1，則即使以 2電壓’亦不會令藍色LED4損傷，導致性能惡 ;，電，保護元件91可作用為次支柱，故即使 乂倒裝接合’亦不會令接合電線67晶片側
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之接合位置的高度降低 局度之位置下進行接合 故可在與圖1構成情 況大約相同 尚，於圖5及圖6中，於過電壓保護元件91使用 件时，亦可使用一般的矽二極管代替齊納二極管Μ。 /元 時，將複數個矽二極管作成同一極性並且直列 j ^ 部之順方向電壓下降（約〇. 7V x個數）值為令動；= 於過電壓地決定石夕二極管的使用根數。 目田 又’於過電壓保護元件91亦可使用可變電阻元件 (variable registor)。此可變電阻元件為具有隨著外加 電壓之增加而令電阻值減少之特性，且與齊納二4極 ° 樣可抑制過電壓。 问 圖8為示出本發明發光裝置之第六實施形態之半導體發 光裝置。 χ 此圖8所示之半導體發光裝置為將來自發光元件所發出 之光予以波長轉換並且放射至透鏡型之樹脂封裝體外部， 除了含有前述圖1所示之導線框1、2、和金屬電子管心柱 3、和藍色LED4、和支柱5、和接合電線6、7、和不含螢光 體1 1之内部樹脂8、和外部樹脂9、和杯1 0之構成以外，具 備將外部樹脂9之外面密合包圍且含有螢光體丨丨之透光性 螢光罩1 0 0為其構成。 螢光罩100為例如含有樹脂基材中以藍色LED4之發光所 讀文發發出螢光之螢光體11而形成。樹脂基材例如為透光性 之聚i旨樹脂、丙烯樹脂、胺基甲酸酯、尼龍、聚矽氧樹 月曰、氯乙稀、聚苯乙烯、鄰驗酸樹脂（Bekelite)、
533604 五、發明說明（23) 龍9(聚m—氧醇，.碳酸醋樹脂）等’胺基甲酸醋、尼 可_=1= 於榮光罩100賦與某程度之彈性，故 J幸二易裝黏至外部樹脂9。 筒ΐ狀ΐίΓ方〇〇人為以密合外部樹脂9外面之形⑻，即於圓 Λ半球形狀之罩以—體形成之形狀，於外 ρ树月日9上可自由脫除安裝。又，罄亦人k , Ι!#ί^ 罩ιοο為將含有螢弁㈣…Λ 狀為#。更且，螢光 狀德虚外部與先體11树雁以射出成型形成指定之形 樹"Λ Λ 密合則可較簡單完成，但為了令外部 之樹脂原料直接噴霧二層承乃將含有螢光體11 可。 、卜邛树月曰9後，硬化形成螢光罩10 0亦 於如此所構成之半導體發光裝置中，來 二光為透過内部樹脂以外部肖脂9彳射至螢光罩1〇。。之此射 至夕d Ϊ:ί螢光體11所吸收，同時轉換波長並射出 ^ 、13 螢光罩10 〇之外面所觀測的發光色為將此 i光合成之顏色，例如由前述之原理而呈白色。 =此，若根據第六實施形態之半導體發光裝置，則於藍 之：ϊΐΐϊ之内部樹脂8及外部樹脂9中不含有榮 先體11而々復盍外部樹脂9外面之螢光罩1〇〇含有體
11 ’故於内部樹脂8及夕卜立β姑4 η匕q 士 丁 X .^ J θ8及外邛樹知9中不會產生螢光體1 1所造 成的先政亂。X，因為螢光罩1〇〇為以 光體U所造成之光散亂較*。因此，經由將夕卜“脂^ 透鏡部形狀作成任意形狀(上述實施形態為半球狀)則可取 90132753.ptd 第28頁 533604
所伴 隨之亮度降低抑 且可將波長轉換 五、發明說明（24) 得所欲的光指向性 制至最小限度。 此外，經由改變螢光罩100之基鉍由π人‘ 若將螢光罩100之安裝構造作成易脫Λ除構、1 之發光色。 #人上 肌矛、構造，並且準備數 種含有不同種類螢光體11之螢光罩1〇〇， 千角双 ® ΐΑ „ 貝〗僅將邊光罩1 0 0 更換即可輕易令射出光之色調可變。 又’螢光體11除了於螢光罩100中含有以外，若於榮光 罩1 〇 〇之表面塗佈含有，則可取得同樣之效果。更且，因 為可於市售之半導體發光元件上裝附螢光罩1〇〇，故可 價製造半導體發光裝置。 可利用性 如上述，本發明之具有發光元件和螢光體的發光裝置可 適於led顯示器、背光裝置、信號機、照光式開關、各種 感應器、各種指示器。 思—件轉L^j兒明 1 導線框 2 導線框 金屬電子管心柱
4 藍色LED 5 支柱 5 接合電線 7 接合電線 8 内部樹脂
533604 五、發明說明 (25) 9 外部樹脂 10 杯 11 螢光體 41 藍寶石基板 42 緩衝層 43 η型導電層 44 η型覆蓋層 45 MQW活性層 46 Ρ型覆蓋層 47 Ρ型導電層 48 ρ電極 49 Π電極 50 透光性電極 70 導光板 70a 射出面 71 光反射盒 72 反射面 73 光擴散模樣 74 透明薄膜 80 基板 81 圖型配線 82 圖型配線 83 框體 83a 杯
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90132753.ptd 第31頁 533604 圖式簡單說明 圖1為本發明發光裝置之第二實施形態之LED燈的截面 圖。 圖2為示出圖1所示之藍色LED層構造之截面圖。 圖3為示出本發明發光裝置之第三實施形態之面狀光源 用裝置之構造，（a)為平面圖，（b)為（a)之A-A線截面圖。 圖4為本發明發光裝置之第四實施形態之SMD(Surface Mounted Device)型之LED燈的截面圖。 圖5為本發明發光裝置之第五實施形態之L E D燈的截面 圖。 圖6為對過電壓保護元件使用齊納二極管時的接續電路 圖。 圖7為對過電壓保護元件使用電容器時的接續電路圖。 圖8為本發明發光裝置之第六實施形態之半導體發光裝 置的截面圖。
90132753.ptd 第32頁

Claims (1)

  1. 533604 案號 90132753 修正 92. 2. ί 2 翁綠.太 六、申請專利範圍 1. 一種發光裝置，其特徵為於具備氮化物半導體所構成 之發光元件、和吸收該發光元件所發出之一部分光，並且 發出具有與此吸收光之波長不同波長光之螢光體的發光裝 置中， 該螢光體為由鹼土金屬矽酸鹽所構成。 2. 如申請專利範圍第1項之發光裝置，其中，該螢光體 為由經銪活化之鹼土金屬矽酸鹽所構成。 3. 如申請專利範圍第1項之發光裝置，其中，該螢光體 為由經二價銪活化之鹼土金屬矽酸鹽所構成。 4 ·如申請專利範圍第1項之發光裝置，其中，該螢光體 為式. (2-x-y)SrO -x(Ba,Ca)0 · (l-a-b-c-d)Si02 -aP205 bAl2 03 cB2 03 dGe02 -y Eu2+ (式中，0<χ<1·6、 0.005 <y<0.5、 0<a、b、c、d<0.5) 所示之經二價銪活化之鹼土金屬原矽酸鹽和/或 (2-x-y)Ba0 - x(Sr,Ca)0 -(l-a-b-c-cDSiOg -aP2 05 bAl203 cB2 03 dGe02 · y Eu2+ (式中，0· 01 <x <1· 6、 0.005 <y <0.5、 0<a、b、c、d<0.5) 所示之驗土金屬原石夕酸鹽，此時，有利令a、b、c及d之值 中之至少一個為大於0 . 0 1。
    C:\專利案件總檔案\90\90132753\90]32753(替換)-l.ptc 第 33 頁 533604 ΛΜ 901327.^__科年f>月」> 日
    其中，該螢光體 六、申請專利範圍 5 ·如申請專利範圍第1項之發光裝置 為被混入覆蓋該發光元件之覆被材料中 6 ·如申請專利範圍第5項之發光裝置， 料為由聚矽氧樹脂所構成。 7. 如申請專利範圍第5項之發光裝置， 料為由環氧樹脂所構成。 8. 如申請專利範圍第5項之發光裝置， 料為由低熔點玻璃所構成。 9 ·如申请專利範圍第5至8項中任一項之 中，該螢光體Λ祜、、曰入舜堂#八1 χ疋我置，其 ]η ^由」^ 覆盍光元件之覆被材料中。 10. 如申5月專利範圍第5至8項中任一項之中 中，該覆被材料為再以透明之第二覆被材料天予以衣，其 11. 如申睛專利範圍第1項之發光裝置，其中，=现。 件為於發光層中含有銦。 〃 5亥發光元 12·如申請專利範圍第丨或丨丨項之發光 光7L件為具有具備於ρ型覆蓋層與η型覆蓋声二，該發 光層的雙層異質構造。 斤夾住之發 13·如申請專利範圍第12項之發光裝置，盆中 盍層為由八^^⑼^夂^所構成， 型覆 該η型覆蓋層為由AlyGVyN(但，〇^y<i)所構成 /4·如申請專利範圍第13項之發光裝置，其中，該 蓋層之帶間隙為大於n型覆蓋層的帶間隙。 1復 1 5·如申請專利範圍第i 2項之發光裝置，其中，該 几件之發光層為由量子井構造所構成。 又 其中 其中 該覆被材 該覆被材 其中，該覆被材 ___ C:\ 專利案件總檔案\90\90132753\90132753(替換)·ΐ. Ptc第34頁 533604
    案號901320 六、申請專利範圍 也1 6’如申請專利範圍第1 5項之發光裝置，其中，該量子 井構造為由InGaN所槿点 .r q w ^ ^ 〆里子 組成。 焉成之井層、和GaN所構成之阻擋層所 1 7·、如申請專利範圍第i 5項之發光裝置，其中，該 井構造為由I n G a N所椹成+ # a $ a i r 〇 μ πw里子 所組成。 厅構成之井層、和AiGaN所構成之阻擋層 18.如申請專利範圍第15項之發光裝置’其 井構造為由AUnGaN所構成之和AHnGa 或置子 層所組成， W構成之阻擋 該阻擋層之帶間隙能量為大於該井層之帶間旦。 1 9.如申請專利範圍第i 5項之發光裝置，其、 之厚度為100A以下。 ' ’该井層 2 0 ·如申請專利範圍第1 2項之發光裝置，其中 别变# 】和/或η型覆蓋層為由彼此組成不同之氮化物口 ^ 層之超格子構造所構成。 牛 2 1.如申請專利範圍第1項之發光裝置，1 件為經由絕緣性之接黏劑而被固定於框。八，該勒光元 22.如申請專利範圍第21項之發光裝置，其 劑為透明。 、T 5亥接黏 請專利範圍第21似項之發光裝置，i中，9 l由含有該鹼土金屬矽酸鹽所構成之該螢光辦。以 24.如申請專利範圍第21項之發光 赏九月豆 劑為白色。 衣置，其中，該接黏 2 5·如申請專利範圍第1項之發光裝盆 /、宁，該發光元
    _|_1 c:\專利案件總檔案\9〇\9〇]32753、9〇1；32753(替換w.ptc第35頁 533604
    533604 曰 修正 案號 901327Μ 六、申請專利範圍 配置之GaN系半導體所構成之發光元 吸收該發光元件所發出之一部/ 吸收光之波長不同波長光之螢光體、亚且發出具有與此 令含有該螢光體之封裝劑充 、 覆蓋該塗層材料、該發光元件及該：柱j f層材料、和 模材料之發光裝置中， ^ ^往^線之前端之塑 該螢光體為由鹼土金屬矽酸鹽所構成。 3 7 · —種發光裝置，1特 裝之GaN系化合物半導具備框體内倒裝接合組 ^ 千^ 所構成之led晶片所構成之發光元 件、和 吸收該LED晶片所發出之一部分光，並且發出具有與此 吸收光之波長不同波長光之螢光體、和 以含有該螢光體之透明封裝劑充填配設該LED晶片之框 體内之塑模材料之發光裝置中， 該螢光體為由鹼土金屬矽酸鹽所構成，經由將該LED晶 片所發出之光和該螢光體所發出之光之混合，則玎放射出 白色光。 38·如申請專利範圍第36或37項之發光裝置，其中，該人 發光兀件為於一者之面側具有p側及n側電極，且被配置方、 金屬框上，且p電極及η電極為分別以金線予以電線接合’ 透過該金線所供給之電壓而發光成藍色。 > 3 9·如申請專利範圍第36或37項之發光裝置，其中’該人 發光元件為被配置於該杯内，並覆蓋該發光元件且以低方、 該杯上面邊緣部配置該螢光體。 wm m c:\專利案件總檔案\90\90]32753\90]32753(替換)-l.ptc 第 37 頁
    533604 _案號90132753_7年 > 月’> 曰 修正_ 六、申請專利範圍 4 〇.如申請專利範圍第1項之發光裝置，其中，該發光元 件為經由保護元件而被保護免受到靜電。 4 1.如申請專利範圍第4 0項之發光裝置，其中，該保護 元件為齊納二極管或電容器。 4 2.如申請專利範圍第40項之發光裝置，其中，該保護 元件為由齊納二極管所構成之次支柱， 該發光元件為被配置於該次支柱上，且，周圍為經該螢 光體所覆蓋。 4 3. —種發光裝置，其特徵為於具備支柱導線之杯内所 配置之GaN系化合物半導體所構成之發光元件、和 吸收該發光元件所發出之一部分光，並且發出具有與此 吸收光之波長不同波長光之螢光體、和 覆盖該發光元件及該支柱導線之前端之塑模材料之發光 裝置中， 該螢光體為由鹼土金屬矽酸鹽所構成，且被含有於構成 覆蓋該塑模材料之螢光蓋的樹脂基材中。
    c:\專利案件總檔案\9〇\9〇132753\9〇132753(替換M.ptc第38頁
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7682525B2 (en) 2007-06-27 2010-03-23 National Central University Material composition for producing blue phosphor by excitation of UV light and method for making the same
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
US8134176B2 (en) 2005-07-28 2012-03-13 Showa Denko K.K. Light-emitting diode and light-emitting diode lamp
US8188488B2 (en) 2003-05-27 2012-05-29 Cree, Inc. Power surface mount light emitting die package
US8622582B2 (en) 2002-09-04 2014-01-07 Cree, Inc. Power surface mount light emitting die package

Families Citing this family (535)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100537349B1 (ko) 1996-06-26 2006-02-28 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
EP1672707B1 (en) * 2001-04-20 2019-07-31 Nichia Corporation Light emitting device
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
JP3749243B2 (ja) 2001-09-03 2006-02-22 松下電器産業株式会社 半導体発光デバイス，発光装置及び半導体発光デバイスの製造方法
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
JP4263453B2 (ja) 2002-09-25 2009-05-13 パナソニック株式会社 無機酸化物及びこれを用いた発光装置
JP2004127988A (ja) * 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
CN100383573C (zh) * 2002-12-02 2008-04-23 3M创新有限公司 多光源照明***
DE10259946A1 (de) * 2002-12-20 2004-07-15 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe zur Konversion der ultravioletten oder blauen Emission eines lichtemittierenden Elementes in sichtbare weiße Strahlung mit sehr hoher Farbwiedergabe
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
DE10261908B4 (de) * 2002-12-27 2010-12-30 Osa Opto Light Gmbh Verfahren zur Herstellung eines konversionslichtemittierenden Elementes auf der Basis von Halbleiterlichtquellen
TWI351566B (en) * 2003-01-15 2011-11-01 Semiconductor Energy Lab Liquid crystal display device
JP2004273798A (ja) * 2003-03-10 2004-09-30 Toyoda Gosei Co Ltd 発光デバイス
US7465961B2 (en) 2003-03-25 2008-12-16 Sharp Kabushiki Kaisha Electronic equipment, backlight structure and keypad for electronic equipment
KR101148332B1 (ko) 2003-04-30 2012-05-25 크리, 인코포레이티드 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
CN100511732C (zh) * 2003-06-18 2009-07-08 丰田合成株式会社 发光器件
AT412928B (de) * 2003-06-18 2005-08-25 Guenther Dipl Ing Dr Leising Verfahren zur herstellung einer weissen led sowie weisse led-lichtquelle
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
DE10331076B4 (de) * 2003-07-09 2011-04-07 Airbus Operations Gmbh Leuchtelement mit einer Leuchtdiode
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP2005073227A (ja) * 2003-08-04 2005-03-17 Sharp Corp 撮像装置
JP2005064047A (ja) * 2003-08-13 2005-03-10 Citizen Electronics Co Ltd 発光ダイオード
US7502392B2 (en) * 2003-09-12 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator
JP2007506264A (ja) * 2003-09-15 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 白色発光照明システム
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
JP2005142311A (ja) * 2003-11-06 2005-06-02 Tzu-Chi Cheng 発光装置
US20050110401A1 (en) * 2003-11-25 2005-05-26 Lin Jung K. Light emitting diode package structure
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
US7403680B2 (en) * 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
US7329887B2 (en) * 2003-12-02 2008-02-12 3M Innovative Properties Company Solid state light device
US20050116635A1 (en) * 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
US7456805B2 (en) 2003-12-18 2008-11-25 3M Innovative Properties Company Display including a solid state light device and method using same
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
US7009285B2 (en) * 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
JP4516337B2 (ja) * 2004-03-25 2010-08-04 シチズン電子株式会社 半導体発光装置
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
KR100605212B1 (ko) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 형광체 및 이를 이용한 백색 발광다이오드
KR100605211B1 (ko) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 형광체 및 이를 이용한 백색 발광다이오드
EP1738385A1 (en) * 2004-04-15 2007-01-03 Koninklijke Philips Electronics N.V. Electrically controllable color conversion cell
FR2869159B1 (fr) * 2004-04-16 2006-06-16 Rhodia Chimie Sa Diode electroluminescente emettant une lumiere blanche
KR100887489B1 (ko) * 2004-04-27 2009-03-10 파나소닉 주식회사 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
KR100655894B1 (ko) 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Ｒｇｂ 발광소자와 형광체를 조합한 발광장치
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
KR100665299B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
TWI308397B (en) * 2004-06-28 2009-04-01 Epistar Corp Flip-chip light emitting diode and fabricating method thereof
US7329905B2 (en) * 2004-06-30 2008-02-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
WO2006005005A2 (en) * 2004-07-06 2006-01-12 Sarnoff Corporation Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Ind Co Ltd Light-emitting device
US7575697B2 (en) * 2004-08-04 2009-08-18 Intematix Corporation Silicate-based green phosphors
US7806541B2 (en) 2004-08-06 2010-10-05 Koninklijke Philips Electronics N.V. High performance LED lamp system
US20060044782A1 (en) * 2004-08-31 2006-03-02 Robin Hsu Light-storing safety device
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
JP2006086300A (ja) * 2004-09-15 2006-03-30 Sanken Electric Co Ltd 保護素子を有する半導体発光装置及びその製造方法
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
KR100668609B1 (ko) * 2004-09-24 2007-01-16 엘지전자 주식회사 백색광원소자
JP2006114637A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 半導体発光装置
JP4880892B2 (ja) 2004-10-18 2012-02-22 株式会社東芝 蛍光体，蛍光体の製造方法およびこれを用いた発光装置
US7772609B2 (en) 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US7670872B2 (en) 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
JP4534717B2 (ja) * 2004-10-29 2010-09-01 豊田合成株式会社 発光装置
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
CN101072844A (zh) * 2004-12-07 2007-11-14 皇家飞利浦电子股份有限公司 包括辐射源和发光材料的照明***
DE112005002889B4 (de) * 2004-12-14 2015-07-23 Seoul Viosys Co., Ltd. Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen und Baugruppen-Montage desselben
BRPI0517584B1 (pt) * 2004-12-22 2017-12-12 Seoul Semiconductor Co., Ltd Lighting device
US20060139335A1 (en) * 2004-12-23 2006-06-29 International Business Machines Corporation Assembly and device for a display having a perimeter touch guard seal
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
BRPI0519478A2 (pt) 2004-12-27 2009-02-03 Quantum Paper Inc display emissivo endereÇÁvel e imprimÍvel
US9070850B2 (en) * 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
TWI303111B (en) * 2005-01-19 2008-11-11 Advanced Optoelectronic Tech Light emitting diode device and manufacturing method thereof
TWM286903U (en) * 2005-01-25 2006-02-01 Shu-Shiung Guo Jewelry lamp
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
EP1694047B1 (de) * 2005-02-16 2020-03-18 X-Rite Switzerland GmbH Beleuchtungseinrichtung für ein Farbmessgerät
US20060189013A1 (en) * 2005-02-24 2006-08-24 3M Innovative Properties Company Method of making LED encapsulant with undulating surface
EP1864339A4 (en) 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd LIGHT-EMITTING DIODE DIODE WITH PHOTO-EMITTING CELL MATRIX
US7274045B2 (en) * 2005-03-17 2007-09-25 Lumination Llc Borate phosphor materials for use in lighting applications
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
KR100799839B1 (ko) * 2005-03-30 2008-01-31 삼성전기주식회사 파장변환용 형광체 혼합물과 이를 이용한 백색 발광장치
KR101142519B1 (ko) * 2005-03-31 2012-05-08 서울반도체 주식회사 적색 형광체 및 녹색 형광체를 갖는 백색 발광다이오드를채택한 백라이트 패널
US7474286B2 (en) * 2005-04-01 2009-01-06 Spudnik, Inc. Laser displays using UV-excitable phosphors emitting visible colored light
US7791561B2 (en) 2005-04-01 2010-09-07 Prysm, Inc. Display systems having screens with optical fluorescent materials
US7733310B2 (en) 2005-04-01 2010-06-08 Prysm, Inc. Display screens having optical fluorescent materials
WO2006107032A1 (ja) * 2005-04-01 2006-10-12 Sony Corporation 情報処理システムおよび方法、並びにプログラム
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
US8000005B2 (en) 2006-03-31 2011-08-16 Prysm, Inc. Multilayered fluorescent screens for scanning beam display systems
US8089425B2 (en) 2006-03-03 2012-01-03 Prysm, Inc. Optical designs for scanning beam display systems using fluorescent screens
US7690167B2 (en) * 2005-04-28 2010-04-06 Antonic James P Structural support framing assembly
KR100704492B1 (ko) * 2005-05-02 2007-04-09 한국화학연구원 형광체를 이용한 백색 발광 다이오드의 제조 방법
KR100666189B1 (ko) 2005-06-30 2007-01-09 서울반도체 주식회사 발광 소자
WO2006126817A1 (en) * 2005-05-24 2006-11-30 Seoul Semiconductor Co., Ltd. Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8128272B2 (en) 2005-06-07 2012-03-06 Oree, Inc. Illumination apparatus
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
KR101161383B1 (ko) * 2005-07-04 2012-07-02 서울반도체 주식회사 발광 다이오드 및 이를 제조하기 위한 방법
DE102005038698A1 (de) 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
KR100670478B1 (ko) * 2005-07-26 2007-01-16 엘지이노텍 주식회사 발광소자
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
JP4873183B2 (ja) 2005-08-04 2012-02-08 日亜化学工業株式会社 蛍光体及び発光装置
JPWO2007018098A1 (ja) * 2005-08-05 2009-02-19 オリンパスメディカルシステムズ株式会社 発光ユニット
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
KR100724591B1 (ko) * 2005-09-30 2007-06-04 서울반도체 주식회사 발광 소자 및 이를 포함한 ｌｅｄ 백라이트
US7765792B2 (en) 2005-10-21 2010-08-03 Honeywell International Inc. System for particulate matter sensor signal processing
KR101258397B1 (ko) 2005-11-11 2013-04-30 서울반도체 주식회사 구리 알칼리토 실리케이트 혼성 결정 형광체
JP4899433B2 (ja) * 2005-11-15 2012-03-21 三菱化学株式会社 蛍光体、並びにそれを用いた発光装置、画像表示装置及び照明装置
CN101310142B (zh) * 2005-11-17 2013-01-02 皇家飞利浦电子股份有限公司 灯组件
US8514210B2 (en) 2005-11-18 2013-08-20 Cree, Inc. Systems and methods for calibrating solid state lighting panels using combined light output measurements
KR101361883B1 (ko) * 2005-11-18 2014-02-12 크리 인코포레이티드 고상 발광 타일들
WO2007061811A1 (en) * 2005-11-18 2007-05-31 Cree, Inc. Solid state lighting panels with variable voltage boost current sources
US7926300B2 (en) 2005-11-18 2011-04-19 Cree, Inc. Adaptive adjustment of light output of solid state lighting panels
US7943946B2 (en) * 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
WO2007070821A2 (en) * 2005-12-13 2007-06-21 Ilight Technologies, Inc. Illumination device with hue transformation
KR101055772B1 (ko) 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
TWI421438B (zh) 2005-12-21 2014-01-01 克里公司 照明裝置
KR20090009772A (ko) * 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US20070145879A1 (en) * 2005-12-22 2007-06-28 Abramov Vladimir S Light emitting halogen-silicate photophosphor compositions and systems
KR20080106402A (ko) 2006-01-05 2008-12-05 일루미텍스, 인크. Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스
DE102006001195A1 (de) 2006-01-10 2007-07-12 Sms Demag Ag Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
WO2007084640A2 (en) * 2006-01-20 2007-07-26 Cree Led Lighting Solutions, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
KR101283182B1 (ko) * 2006-01-26 2013-07-05 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조 방법
JP2007231250A (ja) * 2006-02-02 2007-09-13 Nichia Chem Ind Ltd 蛍光体及びそれを用いた発光装置
DE102006005042A1 (de) * 2006-02-03 2007-08-09 Tridonic Optoelectronics Gmbh Licht emittierende Vorrichtung mit nicht-aktiviertem Leuchtstoff
TWI317756B (en) * 2006-02-07 2009-12-01 Coretronic Corp Phosphor, fluorescent gel, and light emitting diode device
WO2007091687A1 (ja) * 2006-02-10 2007-08-16 Mitsubishi Chemical Corporation 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置
US7884816B2 (en) 2006-02-15 2011-02-08 Prysm, Inc. Correcting pyramidal error of polygon scanner in scanning beam display systems
US8451195B2 (en) 2006-02-15 2013-05-28 Prysm, Inc. Servo-assisted scanning beam display systems using fluorescent screens
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
KR100746338B1 (ko) * 2006-02-20 2007-08-03 한국과학기술원 백색 발광장치용 형광체, 이의 제조방법 및 형광체를이용한 백색 발광장치
US20070210282A1 (en) * 2006-03-13 2007-09-13 Association Suisse Pour La Recherche Horlogere (Asrh) Phosphorescent compounds
EP1999232B1 (en) * 2006-03-16 2017-06-14 Seoul Semiconductor Co., Ltd Fluorescent material and light emitting diode using the same
CN100590173C (zh) 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
JP5032043B2 (ja) 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
JP5025636B2 (ja) 2006-03-28 2012-09-12 京セラ株式会社 発光装置
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
TW200807104A (en) 2006-04-19 2008-02-01 Mitsubishi Chem Corp Color image display device
JP2009534866A (ja) 2006-04-24 2009-09-24 クリー， インコーポレイティッド 横向き平面実装白色ｌｅｄ
WO2007125453A2 (en) * 2006-04-27 2007-11-08 Philips Intellectual Property & Standards Gmbh Illumination system comprising a radiation source and a luminescent material
CN101449100B (zh) 2006-05-05 2012-06-27 科锐公司 照明装置
US7755282B2 (en) * 2006-05-12 2010-07-13 Edison Opto Corporation LED structure and fabricating method for the same
CN101077973B (zh) * 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 硅酸盐荧光材料及其制造方法以及使用其的发光装置
JP2009538536A (ja) 2006-05-26 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 固体発光デバイス、および、それを製造する方法
JP4973011B2 (ja) * 2006-05-31 2012-07-11 豊田合成株式会社 Ｌｅｄ装置
US7969097B2 (en) * 2006-05-31 2011-06-28 Cree, Inc. Lighting device with color control, and method of lighting
WO2007141688A1 (en) * 2006-06-02 2007-12-13 Philips Intellectual Property & Standards Gmbh Colored and white light generating lighting device
KR100939936B1 (ko) * 2006-06-21 2010-02-04 대주전자재료 주식회사 툴리움을 포함하는 백색 발광다이오드용 형광체 및 그제조방법
US7661840B1 (en) 2006-06-21 2010-02-16 Ilight Technologies, Inc. Lighting device with illuminated front panel
KR101258229B1 (ko) * 2006-06-30 2013-04-25 서울반도체 주식회사 발광 소자
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
CN100590172C (zh) 2006-07-26 2010-02-17 北京有色金属研究总院 一种含硅的led荧光粉及其制造方法和所制成的发光器件
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
JP5205724B2 (ja) * 2006-08-04 2013-06-05 日亜化学工業株式会社 発光装置
KR100887068B1 (ko) * 2006-08-04 2009-03-04 삼성전기주식회사 발광 다이오드 모듈 및 이의 제조 방법
ES2391586T3 (es) * 2006-08-15 2012-11-28 Dalian Luminglight Co., Ltd. Materiales luminiscentes basados en silicato que tienen múltiples picos de emisión, procedimientos para su preparación y uso de los mismos en dispositivos de emisión de luz
CN101554089A (zh) * 2006-08-23 2009-10-07 科锐Led照明科技公司 照明装置和照明方法
KR20080018620A (ko) * 2006-08-25 2008-02-28 서울반도체 주식회사 발광 소자
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
US20080123023A1 (en) * 2006-08-30 2008-05-29 Trung Doan White light unit, backlight unit and liquid crystal display device using the same
JP2008060344A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 半導体発光装置
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
DE102007020782A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
EP2070123A2 (en) 2006-10-02 2009-06-17 Illumitex, Inc. Led system and method
KR101497104B1 (ko) * 2006-10-03 2015-02-27 라이트스케이프 머티어리얼스, 인코포레이티드 금속 실리케이트 할라이드 형광체 및 이를 이용한 ｌｅｄ 조명 디바이스
EP2080235B1 (en) * 2006-10-12 2013-12-04 Panasonic Corporation Light-emitting device
BRPI0718085A2 (pt) * 2006-10-31 2013-11-05 Tir Technology Lp Fonte de luz
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US7648650B2 (en) * 2006-11-10 2010-01-19 Intematix Corporation Aluminum-silicate based orange-red phosphors with mixed divalent and trivalent cations
KR20090082923A (ko) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 다중 추출기를 통하여 광을 고효율로 추출하는 발광 다이오드
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
TW200837997A (en) * 2006-11-15 2008-09-16 Univ California High light extraction efficiency sphere LED
US8045595B2 (en) * 2006-11-15 2011-10-25 Cree, Inc. Self aligned diode fabrication method and self aligned laser diode
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
KR100687417B1 (ko) * 2006-11-17 2007-02-27 엘지이노텍 주식회사 형광체의 제조방법
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8337045B2 (en) 2006-12-04 2012-12-25 Cree, Inc. Lighting device and lighting method
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
US8013506B2 (en) 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
US8109656B1 (en) 2007-01-12 2012-02-07 Ilight Technologies, Inc. Bulb for light-emitting diode with modified inner cavity
US20080169746A1 (en) * 2007-01-12 2008-07-17 Ilight Technologies, Inc. Bulb for light-emitting diode
US7686478B1 (en) 2007-01-12 2010-03-30 Ilight Technologies, Inc. Bulb for light-emitting diode with color-converting insert
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9711703B2 (en) * 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8456388B2 (en) * 2007-02-14 2013-06-04 Cree, Inc. Systems and methods for split processor control in a solid state lighting panel
CN101247043B (zh) * 2007-02-15 2010-05-26 葳天科技股份有限公司 发光二极管电路组件
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US7864381B2 (en) * 2007-03-20 2011-01-04 Xerox Corporation Document illuminator with LED-driven phosphor
WO2008116123A1 (en) 2007-03-20 2008-09-25 Spudnik, Inc. Delivering and displaying advertisement or other application data to display systems
DE102007016228A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
DE102007016229A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
JP5222600B2 (ja) 2007-04-05 2013-06-26 株式会社小糸製作所 蛍光体
US7697183B2 (en) 2007-04-06 2010-04-13 Prysm, Inc. Post-objective scanning beam systems
US8169454B1 (en) 2007-04-06 2012-05-01 Prysm, Inc. Patterning a surface using pre-objective and post-objective raster scanning systems
JP4903179B2 (ja) * 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド． 発光装置及びその製造方法
EP1987762A1 (de) * 2007-05-03 2008-11-05 F.Hoffmann-La Roche Ag Oximeter
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
US8038822B2 (en) 2007-05-17 2011-10-18 Prysm, Inc. Multilayered screens with light-emitting stripes for scanning beam display systems
US7712917B2 (en) * 2007-05-21 2010-05-11 Cree, Inc. Solid state lighting panels with limited color gamut and methods of limiting color gamut in solid state lighting panels
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8384630B2 (en) 2007-05-31 2013-02-26 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US7682524B2 (en) * 2007-06-27 2010-03-23 National Central University Phosphor for producing white light under excitation of UV light and method for making the same
US8556430B2 (en) 2007-06-27 2013-10-15 Prysm, Inc. Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens
US7878657B2 (en) 2007-06-27 2011-02-01 Prysm, Inc. Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens
KR100919461B1 (ko) * 2007-07-09 2009-09-28 심현섭 색온도가 변환되는 조명기기용 광원장치
CN101743488B (zh) * 2007-07-17 2014-02-26 科锐公司 具有内部光学特性结构的光学元件及其制造方法
CN101755345A (zh) 2007-07-19 2010-06-23 夏普株式会社 发光装置
US8791631B2 (en) * 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
US7663315B1 (en) 2007-07-24 2010-02-16 Ilight Technologies, Inc. Spherical bulb for light-emitting diode with spherical inner cavity
JP4980427B2 (ja) 2007-07-27 2012-07-18 シャープ株式会社 照明装置および液晶表示装置
US20090033612A1 (en) * 2007-07-31 2009-02-05 Roberts John K Correction of temperature induced color drift in solid state lighting displays
TWI342628B (en) * 2007-08-02 2011-05-21 Lextar Electronics Corp Light emitting diode package, direct type back light module and side type backlight module
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8829820B2 (en) * 2007-08-10 2014-09-09 Cree, Inc. Systems and methods for protecting display components from adverse operating conditions
CN101784636B (zh) 2007-08-22 2013-06-12 首尔半导体株式会社 非化学计量四方铜碱土硅酸盐磷光体及其制备方法
US20090050912A1 (en) * 2007-08-24 2009-02-26 Foxsemicon Integrated Technology, Inc. Light emitting diode and outdoor illumination device having the same
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
WO2009028818A2 (en) 2007-08-28 2009-03-05 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
DE202007019100U1 (de) 2007-09-12 2010-09-02 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED-Leuchte für die energieeffiziente Wiedergabe von weißem Licht
US8519437B2 (en) * 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007043903A1 (de) * 2007-09-14 2009-03-26 Osram Gesellschaft mit beschränkter Haftung Leucht-Vorrichtung
DE102007043904A1 (de) * 2007-09-14 2009-03-19 Osram Gesellschaft mit beschränkter Haftung Leucht-Vorrichtung
CN101388161A (zh) * 2007-09-14 2009-03-18 科锐香港有限公司 Led表面安装装置和并入有此装置的led显示器
KR101346538B1 (ko) 2007-09-26 2013-12-31 니치아 카가쿠 고교 가부시키가이샤 발광소자 및 그것을 이용한 발광장치
DE102007049799A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
KR101525274B1 (ko) * 2007-10-26 2015-06-02 크리, 인코포레이티드 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법
US8866169B2 (en) * 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8018139B2 (en) * 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US20120037886A1 (en) 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US7923925B2 (en) * 2007-11-20 2011-04-12 Group Iv Semiconductor, Inc. Light emitting device with a stopper layer structure
US8866410B2 (en) * 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
JP2010074117A (ja) * 2007-12-07 2010-04-02 Panasonic Electric Works Co Ltd 発光装置
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8823630B2 (en) * 2007-12-18 2014-09-02 Cree, Inc. Systems and methods for providing color management control in a lighting panel
US7907804B2 (en) 2007-12-19 2011-03-15 Oree, Inc. Elimination of stitch artifacts in a planar illumination area
US8182128B2 (en) * 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
CN101482247A (zh) * 2008-01-11 2009-07-15 富士迈半导体精密工业（上海）有限公司 照明装置
US20090309114A1 (en) 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US8337029B2 (en) * 2008-01-17 2012-12-25 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8040070B2 (en) 2008-01-23 2011-10-18 Cree, Inc. Frequency converted dimming signal generation
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TWI362413B (en) * 2008-02-25 2012-04-21 Ind Tech Res Inst Borate phosphor and white light illumination device utilizing the same
JP5227613B2 (ja) * 2008-02-27 2013-07-03 スタンレー電気株式会社 半導体発光装置
CN101978297A (zh) 2008-03-05 2011-02-16 奥利高级照明解决公司 照明装置及其形成方法
KR100986359B1 (ko) * 2008-03-14 2010-10-08 엘지이노텍 주식회사 발광 장치 및 이를 구비한 표시 장치
TWI361829B (en) * 2008-03-20 2012-04-11 Ind Tech Res Inst White light illumination device
JP5665160B2 (ja) * 2008-03-26 2015-02-04 パナソニックＩｐマネジメント株式会社 発光装置および照明器具
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
US7888688B2 (en) * 2008-04-29 2011-02-15 Bridgelux, Inc. Thermal management for LED
DE102008021662A1 (de) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh LED mit Mehrband-Leuchtstoffsystem
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
TW201007091A (en) * 2008-05-08 2010-02-16 Lok F Gmbh Lamp device
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
WO2009143283A1 (en) * 2008-05-20 2009-11-26 Lightscape Materials, Inc. Silicate-based phosphors and led lighting devices using the same
DE202008018269U1 (de) 2008-05-29 2012-06-26 Lumitech Produktion Und Entwicklung Gmbh LED Modul für die Allgemeinbeleuchtung
DE102008025864A1 (de) 2008-05-29 2009-12-03 Lumitech Produktion Und Entwicklung Gmbh LED Modul für die Allgemeinbeleuchtung
US7766509B1 (en) * 2008-06-13 2010-08-03 Lumec Inc. Orientable lens for an LED fixture
KR101438826B1 (ko) 2008-06-23 2014-09-05 엘지이노텍 주식회사 발광장치
CN102077015A (zh) * 2008-06-25 2011-05-25 马里奥·W·卡尔杜洛 紫外生成的可见光源
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
DE102008031029B4 (de) * 2008-06-30 2012-10-31 Texas Instruments Deutschland Gmbh Elektronisches Bauelement mit einer Schutzschaltung für eine lichtemittierende Vorrichtung
EP2312658B1 (en) 2008-07-03 2018-06-27 Samsung Electronics Co., Ltd. A wavelength-converting light emitting diode (led) chip and method for fabrication of an led device equipped with this chip
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US7869112B2 (en) 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
US8698193B2 (en) * 2008-07-29 2014-04-15 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US8080827B2 (en) * 2008-07-31 2011-12-20 Bridgelux, Inc. Top contact LED thermal management
JP5284006B2 (ja) * 2008-08-25 2013-09-11 シチズン電子株式会社 発光装置
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
BRPI0917131A2 (pt) * 2008-08-29 2015-11-10 Sharp Kk dispositivo de iluminação de fundo de um tipo de iluminação lateral
US7859190B2 (en) * 2008-09-10 2010-12-28 Bridgelux, Inc. Phosphor layer arrangement for use with light emitting diodes
JP2010067903A (ja) * 2008-09-12 2010-03-25 Toshiba Corp 発光素子
US8174100B2 (en) * 2008-09-22 2012-05-08 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source using a light-emitting diode
WO2010034159A1 (zh) * 2008-09-26 2010-04-01 Hsu Chen 具有光调变功能之半导体发光组件及其制造方法
KR20110066202A (ko) * 2008-10-01 2011-06-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 증가된 광 추출 및 황색이 아닌 오프 상태 컬러를 위한 인캡슐런트 내의 입자들을 갖는 ｌｅｄ
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
WO2010055831A1 (ja) * 2008-11-13 2010-05-20 国立大学法人名古屋大学 半導体発光装置
JP2010129583A (ja) * 2008-11-25 2010-06-10 Citizen Electronics Co Ltd 照明装置
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
DE202008017960U1 (de) 2008-12-17 2011-02-10 Poly-Tech Service Gmbh LED-basiertes Beleuchtungssystem
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI380483B (en) * 2008-12-29 2012-12-21 Everlight Electronics Co Ltd Led device and method of packaging the same
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US20110037083A1 (en) * 2009-01-14 2011-02-17 Alex Chi Keung Chan Led package with contrasting face
TWI376043B (en) * 2009-01-23 2012-11-01 Everlight Electronics Co Ltd Light emitting device package structure and manufacturing method thereof
US8183575B2 (en) * 2009-01-26 2012-05-22 Bridgelux, Inc. Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
KR20100093981A (ko) * 2009-02-17 2010-08-26 엘지이노텍 주식회사 라이트 유닛
WO2010095809A2 (ko) * 2009-02-20 2010-08-26 (주)큐엠씨 엘이디 칩 테스트장치
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
US8384097B2 (en) 2009-04-08 2013-02-26 Ledengin, Inc. Package for multiple light emitting diodes
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
KR101004713B1 (ko) * 2009-04-22 2011-01-04 주식회사 에피밸리 디스플레이의 디밍 제어방법
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US20100320904A1 (en) 2009-05-13 2010-12-23 Oree Inc. LED-Based Replacement Lamps for Incandescent Fixtures
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20100315325A1 (en) * 2009-06-16 2010-12-16 Samsung Electronics Co., Ltd. Light source unit and display apparatus including the same
JP5624616B2 (ja) * 2009-06-24 2014-11-12 ソウル セミコンダクター カンパニー リミテッド オキシオルトシリケート発光体を有する発光物質を用いる発光装置
WO2010150202A2 (en) 2009-06-24 2010-12-29 Oree, Advanced Illumination Solutions Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
KR101055762B1 (ko) 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
DE102009030205A1 (de) 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
EP2453163A4 (en) * 2009-07-06 2013-08-14 Sharp Kk LIGHTING DEVICE, DISPLAY DEVICE AND TELEVISION RECEIVER
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
DE102009036462B4 (de) * 2009-08-06 2016-10-27 Trw Automotive Electronics & Components Gmbh Abgleichen des Farbortes von Leuchten und beleuchteten Bedien- oder Anzeigeeinheiten in einer gemeinsamen Umgebung
JP2011040494A (ja) * 2009-08-07 2011-02-24 Koito Mfg Co Ltd 発光モジュール
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
TWI361216B (en) * 2009-09-01 2012-04-01 Ind Tech Res Inst Phosphors, fabricating method thereof, and light emitting device employing the same
TWI528604B (zh) * 2009-09-15 2016-04-01 無限科技全球公司 發光、光伏或其它電子裝置及系統
CN102032480B (zh) 2009-09-25 2013-07-31 东芝照明技术株式会社 灯泡型灯以及照明器具
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
DE202009016962U1 (de) 2009-10-13 2010-05-12 Merck Patent Gmbh Leuchtstoffmischungen
WO2011044974A1 (de) 2009-10-13 2011-04-21 Merck Patent Gmbh Leuchtstoffmischungen mit europium dotieren ortho-silikaten
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US20120091494A1 (en) * 2009-12-04 2012-04-19 Anatoly Vasilyevich Vishnyakov Composite luminescent material for solid-state sources of white light
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US8511851B2 (en) 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
TWI461626B (zh) * 2009-12-28 2014-11-21 Chi Mei Comm Systems Inc 光源裝置及具有該光源裝置之可攜式電子裝置
EP2532946A4 (en) * 2010-02-05 2013-10-02 With Ltd Liability Dis Plus Soc METHOD FOR FORMING A LIGHT EMITTING SURFACE AND LIGHTING DEVICE IMPLEMENTING SAID METHOD
JP5257622B2 (ja) * 2010-02-26 2013-08-07 東芝ライテック株式会社 電球形ランプおよび照明器具
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
CN102192422B (zh) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 白光led照明装置
CN102194970B (zh) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 脉冲电流驱动的白光led照明装置
WO2011115515A1 (ru) 2010-03-16 2011-09-22 Общество с ограниченной ответственностью "ДиС ПЛЮС" Способ управления цветностью светового потока белого светодиода и устройство для его осуществления способа
WO2011123538A2 (en) 2010-03-31 2011-10-06 Osram Sylvania Inc. Phosphor and leds containing same
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101298406B1 (ko) * 2010-05-17 2013-08-20 엘지이노텍 주식회사 발광소자
TWI422073B (zh) * 2010-05-26 2014-01-01 Interlight Optotech Corp 發光二極體封裝結構
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
DE102010030473A1 (de) * 2010-06-24 2011-12-29 Osram Gesellschaft mit beschränkter Haftung Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
DE112010005700T5 (de) * 2010-06-25 2013-05-02 Society With Limited Liability "Dis Plus" LED-Leuchte
EP2402648A1 (en) * 2010-07-01 2012-01-04 Koninklijke Philips Electronics N.V. TL retrofit LED module outside sealed glass tube
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
WO2012018277A1 (ru) * 2010-08-04 2012-02-09 Общество с ограниченной ответственностью "ДиС ПЛЮС" Осветительное устройство
DE102010034322A1 (de) * 2010-08-14 2012-02-16 Litec-Lp Gmbh Oberflächenmodifizierter Silikatleuchtstoffe
RU2444676C1 (ru) * 2010-08-16 2012-03-10 Владимир Семенович Абрамов Светодиодный источник излучения
US8568009B2 (en) * 2010-08-20 2013-10-29 Dicon Fiberoptics Inc. Compact high brightness LED aquarium light apparatus, using an extended point source LED array with light emitting diodes
US8523385B2 (en) 2010-08-20 2013-09-03 DiCon Fibêroptics Inc. Compact high brightness LED grow light apparatus, using an extended point source LED array with light emitting diodes
JP5127965B2 (ja) 2010-09-02 2013-01-23 株式会社東芝 蛍光体およびそれを用いた発光装置
KR20120024104A (ko) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 발광 소자
DE102010041236A1 (de) * 2010-09-23 2012-03-29 Osram Ag Optoelektronisches Halbleiterbauelement
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102130254B (zh) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 发光装置及其制造方法
US8357553B2 (en) * 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
EP2447338B1 (en) * 2010-10-26 2012-09-26 Leuchtstoffwerk Breitungen GmbH Borophosphate phosphor and light source
US9024341B2 (en) * 2010-10-27 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Refractive index tuning of wafer level package LEDs
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
EA029315B1 (ru) * 2010-11-08 2018-03-30 Август Геннадьевич КРАСНОВ Светодиод-лампа, светодиод с нормированной яркостью, мощный чип для светодиода
JP5770205B2 (ja) * 2010-11-22 2015-08-26 宇部マテリアルズ株式会社 高い発光特性と耐湿性とを示すケイ酸塩蛍光体及び発光装置
DE102010055265A1 (de) 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR20130128444A (ko) * 2010-12-29 2013-11-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광대력 출력 및 제어가능한 색을 갖는 원격 형광체 ｌｅｄ 디바이스
KR101719636B1 (ko) * 2011-01-28 2017-04-05 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
CN102130282A (zh) * 2011-02-12 2011-07-20 西安神光安瑞光电科技有限公司 白光led封装结构及封装方法
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US9085732B2 (en) 2011-03-11 2015-07-21 Intematix Corporation Millisecond decay phosphors for AC LED lighting applications
CN102683543B (zh) * 2011-03-15 2015-08-12 展晶科技(深圳)有限公司 Led封装结构
KR101365361B1 (ko) 2011-03-18 2014-02-20 메르크 파텐트 게엠베하 실리케이트 형광 물질
DE102011016567B4 (de) * 2011-04-08 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement
US8596815B2 (en) 2011-04-15 2013-12-03 Dicon Fiberoptics Inc. Multiple wavelength LED array illuminator for fluorescence microscopy
US8979316B2 (en) 2011-05-11 2015-03-17 Dicon Fiberoptics Inc. Zoom spotlight using LED array
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
KR101793518B1 (ko) * 2011-05-19 2017-11-03 삼성전자주식회사 적색 형광체 및 이를 포함하는 발광장치
US8986842B2 (en) 2011-05-24 2015-03-24 Ecole Polytechnique Federale De Lausanne (Epfl) Color conversion films comprising polymer-substituted organic fluorescent dyes
JP5772292B2 (ja) * 2011-06-28 2015-09-02 セイコーエプソン株式会社 生体センサーおよび生体情報検出装置
JP5863291B2 (ja) * 2011-06-28 2016-02-16 株式会社小糸製作所 平面発光モジュール
TWM418399U (en) * 2011-07-04 2011-12-11 Azurewave Technologies Inc Upright Stacked Light-emitting 2 LED structure
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
USD700584S1 (en) 2011-07-06 2014-03-04 Cree, Inc. LED component
DE102011107893A1 (de) * 2011-07-18 2013-01-24 Heraeus Noblelight Gmbh Optoelektronisches Modul mit verbesserter Optik
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
WO2013013154A2 (en) 2011-07-21 2013-01-24 Cree, Inc. Light emitter device packages, components, and methods for improved chemical resistance and related methods
KR101772588B1 (ko) 2011-08-22 2017-09-13 한국전자통신연구원 클리어 컴파운드 에폭시로 몰딩한 ｍｉｔ 소자 및 그것을 포함하는 화재 감지 장치
JP5634352B2 (ja) 2011-08-24 2014-12-03 株式会社東芝 蛍光体、発光装置および蛍光体の製造方法
US8410508B1 (en) * 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method
CN103000794B (zh) * 2011-09-14 2015-06-10 展晶科技(深圳)有限公司 Led封装结构
JP5533827B2 (ja) * 2011-09-20 2014-06-25 豊田合成株式会社 線状光源装置
JP5236843B1 (ja) 2011-10-11 2013-07-17 パナソニック株式会社 発光装置およびこれを用いた照明装置
WO2013062592A1 (en) * 2011-10-28 2013-05-02 Hewlett-Packard Development Company, L.P. Luminescent layer with up-converting luminophores
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
JP2013110154A (ja) * 2011-11-17 2013-06-06 Sanken Electric Co Ltd 発光装置
KR101323246B1 (ko) * 2011-11-21 2013-10-30 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지
WO2013078463A1 (en) 2011-11-23 2013-05-30 Quarkstar Llc Light-emitting devices providing asymmetrical propagation of light
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
KR101894040B1 (ko) * 2011-12-06 2018-10-05 서울반도체 주식회사 엘이디 조명장치
RU2503884C2 (ru) * 2011-12-15 2014-01-10 Общество с ограниченной ответственностью "ДиС ПЛЮС" Система стационарного освещения и светоизлучающее устройство для этой системы
RU2502917C2 (ru) * 2011-12-30 2013-12-27 Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" Светодиодный источник белого света с комбинированным удаленным фотолюминесцентным конвертером
US20130178001A1 (en) * 2012-01-06 2013-07-11 Wen-Lung Chin Method for Making LED LAMP
WO2013112542A1 (en) * 2012-01-25 2013-08-01 Intematix Corporation Long decay phosphors for lighting applications
EP2620691B1 (en) * 2012-01-26 2015-07-08 Panasonic Corporation Lighting device
CN103242839B (zh) * 2012-02-08 2015-06-10 威士玻尔光电(苏州)有限公司 蓝光激发黄绿色铝酸盐荧光粉生产方法
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) * 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
EP2823017B1 (en) 2012-03-06 2017-04-19 Nitto Denko Corporation Ceramic body for light emitting devices
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
WO2013144834A1 (en) 2012-03-30 2013-10-03 Koninklijke Philips N.V. Light emitting device with wavelength converting side coat
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
RU2641282C2 (ru) * 2012-05-22 2018-01-16 Люмиледс Холдинг Б.В. Новые люминофоры, такие как новые узкополосные люминофоры красного свечения, для твердотельного источника света
CN102664230A (zh) * 2012-05-29 2012-09-12 邓崛 Led发光装置及其制造方法
CN103453333A (zh) * 2012-05-30 2013-12-18 致茂电子(苏州)有限公司 具有连续光谱的发光二极管光源
CN103511871A (zh) * 2012-06-29 2014-01-15 展晶科技(深圳)有限公司 发光二极管灯具
WO2014006501A1 (en) 2012-07-03 2014-01-09 Yosi Shani Planar remote phosphor illumination apparatus
CN102757784B (zh) * 2012-07-20 2014-05-07 江苏博睿光电有限公司 一种硅酸盐红色荧光粉及其制备方法
JP5578739B2 (ja) 2012-07-30 2014-08-27 住友金属鉱山株式会社 アルカリ土類金属シリケート蛍光体及びその製造方法
US9305439B2 (en) * 2012-10-25 2016-04-05 Google Inc. Configurable indicator on computing device
CN103837945A (zh) * 2012-11-28 2014-06-04 浜松光子学株式会社 单芯光收发器
RU2628014C2 (ru) * 2012-12-06 2017-08-17 Евгений Михайлович Силкин Световой прибор
TWI578573B (zh) * 2013-01-28 2017-04-11 Harvatek Corp A plurality of blue light emitting diodes in white light
US9133990B2 (en) 2013-01-31 2015-09-15 Dicon Fiberoptics Inc. LED illuminator apparatus, using multiple luminescent materials dispensed onto an array of LEDs, for improved color rendering, color mixing, and color temperature control
US9235039B2 (en) 2013-02-15 2016-01-12 Dicon Fiberoptics Inc. Broad-spectrum illuminator for microscopy applications, using the emissions of luminescent materials
JP2014160772A (ja) * 2013-02-20 2014-09-04 Toshiba Lighting & Technology Corp 発光装置および照明装置
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
CN103203470B (zh) * 2013-05-13 2015-04-01 兰州理工大学 镍基荧光粒子功能指示复合涂层及其制备方法
JP5861047B2 (ja) * 2013-05-14 2016-02-16 パナソニックＩｐマネジメント株式会社 蛍光体および当該蛍光体を用いた発光装置、ならびに当該発光装置を備える投影装置および車両
KR102096053B1 (ko) * 2013-07-25 2020-04-02 삼성디스플레이 주식회사 유기발광표시장치의 제조방법
CN105814172B (zh) * 2013-09-26 2018-01-23 皇家飞利浦有限公司 用于固态照明的新氮化铝硅酸盐磷光体
JP6323020B2 (ja) * 2014-01-20 2018-05-16 セイコーエプソン株式会社 光源装置およびプロジェクター
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
KR20150122360A (ko) * 2014-04-23 2015-11-02 (주)라이타이저코리아 발광 소자 패키지 및 그의 제조 방법
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
EP3149108B1 (en) * 2014-09-11 2017-12-20 Philips Lighting Holding B.V. Pc-led module with enhanced white rendering and conversion efficiency
JP6563495B2 (ja) 2014-11-26 2019-08-21 エルイーディエンジン・インコーポレーテッド 穏やかな調光及び色調整可能なランプ用のコンパクトなｌｅｄエミッタ
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
EP3274423B1 (en) 2015-03-24 2019-09-18 Koninklijke Philips N.V. Blue emitting phosphor converted led with blue pigment
DE202015103126U1 (de) * 2015-06-15 2016-09-19 Tridonic Jennersdorf Gmbh LED-Modul
US9735323B2 (en) * 2015-06-30 2017-08-15 Nichia Corporation Light emitting device having a triple phosphor fluorescent member
CN105087003B (zh) * 2015-09-02 2017-05-17 中国科学院长春应用化学研究所 一种橙黄光led荧光粉、其制备方法及其应用
US9478587B1 (en) 2015-12-22 2016-10-25 Dicon Fiberoptics Inc. Multi-layer circuit board for mounting multi-color LED chips into a uniform light emitter
KR20180101493A (ko) 2016-01-14 2018-09-12 바스프 에스이 강성 2,2'-비페녹시 가교를 갖는 페릴렌 비스이미드
RU2639554C2 (ru) * 2016-03-01 2017-12-21 Николай Евгеньевич Староверов Герметичный светодиодный кластер повышенной эффективности (варианты)
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
FR3053757B1 (fr) * 2016-07-05 2020-07-17 Valeo Vision Dispositif d'eclairage et/ou de signalisation pour vehicule automobile
DE102016116439A1 (de) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Anordnung mit einem Gehäuse mit einem strahlungsemittierenden optoelektronischen Bauelement
CN109803969B (zh) 2016-10-06 2022-08-05 巴斯夫欧洲公司 2-苯基苯氧基取代的苝双酰亚胺化合物及其用途
JP6932910B2 (ja) 2016-10-27 2021-09-08 船井電機株式会社 表示装置
KR101831899B1 (ko) * 2016-11-02 2018-02-26 에스케이씨 주식회사 다층 광학 필름 및 이를 포함하는 표시장치
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
JP6940764B2 (ja) 2017-09-28 2021-09-29 日亜化学工業株式会社 発光装置
CN108063176A (zh) * 2017-10-30 2018-05-22 东莞市豪顺精密科技有限公司 一种蓝光led灯及其制造工艺和应用
JP6645488B2 (ja) * 2017-11-09 2020-02-14 信越半導体株式会社 半導体型蛍光体
KR102428755B1 (ko) * 2017-11-24 2022-08-02 엘지디스플레이 주식회사 파장 변환이 가능한 광섬유 및 이를 사용하는 백라이트 유닛
EP3728269B1 (en) 2017-12-19 2022-03-09 Basf Se Cyanoaryl substituted benz(othi)oxanthene compounds
CN108198809B (zh) * 2018-01-02 2020-01-07 广东纬达斯电器有限公司 一种led照明装置
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
EP3768799B1 (en) 2018-03-20 2022-02-09 Basf Se Yellow light emitting device
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
KR102372498B1 (ko) * 2018-12-17 2022-03-10 박신애 발광장치를 구비하는 조립식 화장실용 패널
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
CN114026201B (zh) * 2019-06-28 2023-10-20 电化株式会社 荧光体板和使用该荧光体板的发光装置
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
KR102599819B1 (ko) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등
KR102599818B1 (ko) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB544160A (en) * 1940-08-27 1942-03-31 Gen Electric Co Ltd Improvements in luminescent materials
US3505240A (en) † 1966-12-30 1970-04-07 Sylvania Electric Prod Phosphors and their preparation
US4088923A (en) * 1974-03-15 1978-05-09 U.S. Philips Corporation Fluorescent lamp with superimposed luminescent layers
JPS5241484A (en) * 1975-09-25 1977-03-31 Gen Electric Fluorescent lamp structure using two kinds of phospher
JPS5944337B2 (ja) 1978-03-08 1984-10-29 三菱電機株式会社 螢光体
JPS57160381A (en) * 1981-03-25 1982-10-02 Matsushita Electric Ind Co Ltd Speed controlling device of direct current motor
JPS59226088A (ja) 1983-06-07 1984-12-19 Toshiba Corp 緑色発光螢光体
JPS6013882A (ja) 1983-07-05 1985-01-24 Matsushita Electronics Corp 螢光体
US4661419A (en) * 1984-07-31 1987-04-28 Fuji Photo Film Co., Ltd. Phosphor and radiation image storage panel containing the same
JPS6244792A (ja) 1985-08-22 1987-02-26 三菱電機株式会社 Ｃｒｔデイスプレイ装置
JPS62277488A (ja) 1986-05-27 1987-12-02 Toshiba Corp 緑色発光螢光体
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
EP0550937B1 (en) † 1992-01-07 1997-03-19 Koninklijke Philips Electronics N.V. Low-pressure mercury discharge lamp
JP3215722B2 (ja) * 1992-08-14 2001-10-09 エヌイーシー三菱電機ビジュアルシステムズ株式会社 計測波形判定方法
US6013199A (en) * 1997-03-04 2000-01-11 Symyx Technologies Phosphor materials
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP3209096B2 (ja) * 1996-05-21 2001-09-17 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
KR100537349B1 (ko) * 1996-06-26 2006-02-28 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH1056236A (ja) * 1996-08-08 1998-02-24 Toyoda Gosei Co Ltd ３族窒化物半導体レーザ素子
JP3065258B2 (ja) 1996-09-30 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いた表示装置
JP4024892B2 (ja) * 1996-12-24 2007-12-19 化成オプトニクス株式会社 蓄光性発光素子
JP3706452B2 (ja) * 1996-12-24 2005-10-12 ローム株式会社 半導体発光素子
KR100398516B1 (ko) * 1997-01-09 2003-09-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
CN1964093B (zh) 1997-01-09 2012-06-27 日亚化学工业株式会社 氮化物半导体元器件
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
DE59814117D1 (de) * 1997-03-03 2007-12-20 Philips Intellectual Property Weisse lumineszenzdiode
JP3246386B2 (ja) 1997-03-05 2002-01-15 日亜化学工業株式会社 発光ダイオード及び発光ダイオード用の色変換モールド部材
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
DE19730006A1 (de) * 1997-07-12 1999-01-14 Walter Dipl Chem Dr Rer N Tews Kompakte Energiesparlampe mit verbesserter Farbwiedergabe
US5847507A (en) † 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP3257455B2 (ja) 1997-07-17 2002-02-18 松下電器産業株式会社 発光装置
US5982092A (en) * 1997-10-06 1999-11-09 Chen; Hsing Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter
US6267911B1 (en) * 1997-11-07 2001-07-31 University Of Georgia Research Foundation, Inc. Phosphors with long-persistent green phosphorescence
JP3627478B2 (ja) * 1997-11-25 2005-03-09 松下電工株式会社 光源装置
CN1086727C (zh) * 1998-01-14 2002-06-26 中日合资无锡帕克斯装饰制品有限公司 细颗粒蓄光性荧光粉及其制备方法
JP2924961B1 (ja) 1998-01-16 1999-07-26 サンケン電気株式会社 半導体発光装置及びその製法
JP3612985B2 (ja) * 1998-02-02 2005-01-26 豊田合成株式会社 窒化ガリウム系化合物半導体素子及びその製造方法
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
DE19806213B4 (de) 1998-02-16 2005-12-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Kompakte Energiesparlampe
JPH11233832A (ja) 1998-02-17 1999-08-27 Nichia Chem Ind Ltd 発光ダイオードの形成方法
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JPH11354848A (ja) 1998-06-10 1999-12-24 Matsushita Electron Corp 半導体発光装置
JP2907286B1 (ja) * 1998-06-26 1999-06-21 サンケン電気株式会社 蛍光カバーを有する樹脂封止型半導体発光装置
JP2000029696A (ja) 1998-07-08 2000-01-28 Sony Corp プロセッサおよびパイプライン処理制御方法
JP3486345B2 (ja) * 1998-07-14 2004-01-13 東芝電子エンジニアリング株式会社 半導体発光装置
TW473429B (en) * 1998-07-22 2002-01-21 Novartis Ag Method for marking a laminated film material
JP3584163B2 (ja) 1998-07-27 2004-11-04 サンケン電気株式会社 半導体発光装置の製造方法
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
EP1046196B9 (en) 1998-09-28 2013-01-09 Koninklijke Philips Electronics N.V. Lighting system
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP2000150966A (ja) 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置及びその製造方法
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3708730B2 (ja) 1998-12-01 2005-10-19 三菱電線工業株式会社 発光装置
US6656608B1 (en) * 1998-12-25 2003-12-02 Konica Corporation Electroluminescent material, electroluminescent element and color conversion filter
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
JP2000248280A (ja) 1999-02-26 2000-09-12 Yoshitaka Tateiwa 粗骨材の製造に関する土壌改良材及び製造する方法
JP3349111B2 (ja) 1999-03-15 2002-11-20 株式会社シチズン電子 表面実装型発光ダイオード及びその製造方法
JP2000284280A (ja) 1999-03-29 2000-10-13 Rohm Co Ltd 面状光源
WO2000058665A1 (fr) * 1999-03-29 2000-10-05 Rohm Co., Ltd Source lumineuse plane
JP2000349345A (ja) 1999-06-04 2000-12-15 Matsushita Electronics Industry Corp 半導体発光装置
JP2000345152A (ja) * 1999-06-07 2000-12-12 Nichia Chem Ind Ltd 黄色発光残光性フォトルミネッセンス蛍光体
JP3337000B2 (ja) 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2001217461A (ja) 2000-02-04 2001-08-10 Matsushita Electric Ind Co Ltd 複合発光素子
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
AT410266B (de) † 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP2003282744A (ja) * 2002-03-22 2003-10-03 Seiko Epson Corp 不揮発性記憶装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530915B2 (en) 2002-09-04 2013-09-10 Cree, Inc. Power surface mount light emitting die package
US8622582B2 (en) 2002-09-04 2014-01-07 Cree, Inc. Power surface mount light emitting die package
US8710514B2 (en) 2002-09-04 2014-04-29 Cree, Inc. Power surface mount light emitting die package
US8188488B2 (en) 2003-05-27 2012-05-29 Cree, Inc. Power surface mount light emitting die package
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
US8134176B2 (en) 2005-07-28 2012-03-13 Showa Denko K.K. Light-emitting diode and light-emitting diode lamp
US7682525B2 (en) 2007-06-27 2010-03-23 National Central University Material composition for producing blue phosphor by excitation of UV light and method for making the same

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