TW201142073A - Conformal layers by radical-component CVD - Google Patents
Conformal layers by radical-component CVD Download PDFInfo
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Description
201142073 、發明說明: 此申請案主張於西元2010年7月21日提出申請之名 稱為「FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES」的美國專 利申請第12/840,768號,以及於西元2010年3月5日提 出 申請之 名稱為 「 CONFORMALS BY RADICAL-COMPONENT CVD」的美國臨時專利申請第 61/311,061號的權益。就各方面而言,這些申請案的全 文係以參照方式併入本文中。 【發明所屬之技術領域】 本發明關於製造半導體裝置的方法。 【先前技術】 自從數十年前引進了半導體裝置,半導體裝置幾何形 態之尺寸已經顯著地減小。現代半導體製造設備常規地 製造具有45 nm、32 nm與28 nm特徵尺寸之裝置,且正 在發展並實現新設備以製造具有甚至更小幾何形態之裝 置。減小的特徵尺寸致使裝置上之結構特徵具有減小的 空間尺寸。元件上之間隙與溝槽的寬度限縮到一程度, 其中間隙深度對其寬度之縱橫比變得高到足夠使以介電 材料來填充間隙更富有挑戰性。沉積之介電材料傾向在 201142073 間隙完全填滿之前於頂部堵塞,而在間隙中間產生孔或 縫隙。 、數年來,已經發展許多技術來避免使介電材料堵塞間 隙的頂部’或「密封(heal)」已經形成的孔或縫隙。一種 方式以高度可流動的前驅物材料來開始,高度可流動的 前驅物材料可形成於經圖案化基材表面上(例如,s〇G沉 積技術)。這些可流動的前驅物可流入並填充非常小的基 材間隙,而不會形成孔或弱的縫隙。 於某些應用中,基材間隙内部的表面可能不會被可流 動的’I電材料所潤濕。舉例而言’這傾向在下方材料於 间恤下沉積時所發生。因此,需要有新的沉積製程以及 材料,以在結構基材上形成介電材料,致使可流動的材 料可更簡單地滲透基材表面中的間隙。本發明滿足了這 種和其它需求。 【發明内容】 茲揭露用以自無碳矽與氮前驅物與自由基-氮前驅物 形成含有矽與氮的共形介電層(例如,石夕_氮-氫(Si_N_H) 膜)之方法、材料以及系統。無碳矽與氮前驅物主要藉由 接觸自由基-氮前驅物而激發。因為矽與氮膜是在無碳情 況下形成,因此可在較少孔洞形成及較低體積收縮率下 完成膜至硬化的氧化矽之轉化。可將經沉積的含矽與氮 201142073 膜完全或部分轉化為氧化石夕,其容許共形介電層的光學 特性成為可選擇的。可於低溫下進行切與氮薄膜的沉 積,以於基材溝射形成襯㈣4發現低溫襯塾層可 增進濕潤特性,並料可流動的膜更完整地填充溝槽。 本發明的具體實施例包括於基材處理腔室中之基材處 理區域中的經圖案化基材上形成共形含碎與氮層的方 法。适些方法包括將無碳含矽與氮前驅物與自由基-氮前 驅物混合。藉由接觸自由基-氮前驅物而主要地激發無碳 含石夕與氮前驅物。這些方法進—步包括於經圖案化基材 上沉積具有共形層厚度的共形含矽與氮層。 本發明的具體實施例進一#包括形成具降低的體積收 縮率之3⑪層的方法。這些方法包括移轉含有間隙之基 材以及於基材上沉積共形含石夕與氮|。共形含石夕與氮 層具有共形性(eGnfGmality)。這些方法進—步包括於共 形含矽與氮層上沉積可流動的含矽與氮層。含矽層包含 八形3矽與氮層以及可流動的含矽與氮層二者。 額外之具體實施例與特徵係部分地揭示在以下說明 中,且其部分地對於熟習此技藝之人士在參閱說明書時 于月顯或7藉由實施本發明而瞭解。可藉由說明書 中所描述之工具、組合和方法來瞭解並獲得本發明之特 徵與優點。 【實施方式】 茲描述用以自無碳矽與氮前驅物與自由基-氮前驅物 201142073 形成含有矽與氮的共形介電層(例如,矽-氮-氳(Si_N_H) 膜)之方法、材料以及系統。無碳矽與氮前驅物主要藉由 接觸自由基-氮前驅物而激發。因為石夕與氮膜是在無碳情 況下形成,因此可在較少孔洞形成及較低體積收縮率下 完成膜至硬化的氧化矽之轉化。可將經沉積的含矽與氮 膜完全或部分轉化為氧化矽,其容許共形介電層的光學 特性成為可選擇的。可於低溫下進行含矽與氮薄膜的沉 積,以於基材溝槽中形成襯墊層。於多個具體實施例中, 已發現低溫襯墊層可增進濕潤特性,並容許可流動的膜 更完整地填充溝槽。在導入關於用以形成共形介電層的 方法及系統之額外細節的過程中,本發明之具體實施例 的多個態樣將被呈現在一個具體實施例的論述中,並可 瞭解到,除非有相反的陳述,該等態樣也可被應用在其 餘的具體實施例中。 第1圖為流程圖,其繪示根據本發明之具體實施例的 用以製作共形介電層之方法i 00中的經選擇步驟。。方 法100包括提供無碳矽前驅物至反應腔室(步驟i 〇2)。無 碳矽前驅物可以是,舉例而言,矽與氮前驅物、矽與氫 前驅物或含矽·氮-與-氫前驅物,還有其它類型的矽前驅 物。這些前驅物的特殊實例可包括矽烷基胺 (silyl-amine),如 H2N(SiH3)、HN(SiH3)2 及 N(SiH3)3,還 有其它矽烷基胺。這些矽烷基胺可與可作為載氣、反應 201142073 性氣體或兩者皆可的額外氣體混合。額外氣體的實例可 包括H2、N2、NH3、He以及Ar,還有其它氣體。無碳 石夕則驅物的實例也可包含單獨存在或與其它含石夕氣體 (例如,N(SiH3)3)、含氫氣體(例如,h2)及/或含氮氣體(例 如,N2、NH3)混合之矽烷(SiH4) 〇無碳矽前驅物也可包 括二矽烷、三矽烷、高階矽烷以及氣化矽烷,其可單獨 存在或與另一個或刖述無碳碎前驅物結合。 除了無碳以外,矽前驅物還可為無氧。氧的缺乏可於 自前驅物形成的矽與氮層中造成較低的矽醇(Si_〇H)基 團濃度。沉積膜中存在過多的石夕醇部分’可於自沉積層 移除羥基(-OH)部分的後沉積步驟期間造成增加的孔隙 率以及收縮率。在其它具體實施例中,矽前驅物含有氧, 其可併入共形含矽與氮膜中。為了調整沉積膜的沉積特 性及/或光學特性,含有氧可能是理想的。可如單獨的前 驅物般導入含氧前驅物,且可同時將無碳矽前驅物及含 氧前驅物流入基材處理區域。 另外可將自由基-氮前驅物提供至反應腔室(步驟 1〇4)。自由基-氮前驅物為含氮-自由基物種,其於反應腔 室外部自更穩定的氮前驅物形成。舉例而言,> 贿3等 穩疋的氮前驅物可於反應腔室外部的電漿單元甲活化, 以形成自由基-氮前驅物,其接荖齡这_ 六伐有務I廷進入反應腔室。在 201142073 不同的具體實施例中,穩定的氮前驅物也可為包含nh3 與N2、nh3與h2、nh3與n2與h2以及n2與h2的混合 物。在與n2以及H2的混合物中,也可用胼來取代nh3 或與NH3組合。穩定的氮前驅物(以及自由基-氮前驅物) 也可伴隨著載氣,如氬(Ar)、氫(H2)、氮(N2)、氦等等。 所產生的自由基-氮前驅物可為·Ν、·ΝΗ、·ΝΗ2中之一或 多種’且也可能伴隨著於電漿中所形成的離子化物種。 —般而言,不包括氬的自由基前驅物也將容許形成含 石夕與氮層。若包括氮的話’自由基前驅物可為自由基-氮 刖驅物’其與前述之前驅物一起提供至遠端電漿區域。 自由基前驅物於反應腔室中與沉積區域分隔的一個區段 中產生’而則驅物於沉積區域混合並反應,以沉積石夕與 氮層於沉積基材(例如,半導體晶圓)上。於自由基前驅 物為自由基-氮前驅物的具體實施例中,穩定的氮前驅物 机入遠端電漿區域並由電漿激發。穩定的氤前驅物(以及 自由基-氮前驅物)也可伴隨著載氣,如氫(η2)、氮(Ν2)、 氬、氦等等。另外也於所揭露的具體實施例中發現,自 輸入氣體形成的基本上由氮(Ν2)所組成(可有或沒有額外 惰性載氣)之自由基-氮前驅物可產生有利的膜。於含矽 前驅物包含氮的具體實施例中,自由基_氮前驅物也可由 基本上由氫(Η2)·(及視情況而定的惰性载氣)所組成的輸 201142073 入氣體所形成的自由基前驅物所取代。於多個具體實施 例中,自由基-氮前驅物於反應腔室中藉由篩具或噴麗頭 與基材處理區域分隔的一個區段中產生。於基材處理區 域中,無碳矽前驅物及自由基-氮前驅物混合並反應(步 驟106)’以於沉積基材上沉積共形含矽與氮膜(步驟 108)。自由基-氮前驅物對無碳矽前驅物提供主要的激發 反應。於多個具體實施例中,自由基-氮前軀物對無碳石夕 前驅物提供僅有的激發反應。於沉積其間,沒有或基本 上沒有電漿功率被施加至基材處理區域。 於不同的具體實施例中,基材處理區域中的屢力低於 200 mTorr、150 mTorr、100 mTorr、75 mTorr 或 50 mTorr 中之一。於不同的具體實施例中,共形含矽與氮膜的厚 度可低於 30 nm、20nm、15nm、10nm 及 5nm 中之一。 於不同的具體實施例中,共形含矽與氮膜的生長速率可 低於 30 nm/min、20 nm/min、15 nm/min、1〇 nm/min 及 5 nm/min中之一。如前所述’參照第1圖所描述的數值 界限也可應用於本文他處所描述的其它具體實施例。前 驅物的流速可夠低以在基材處理區域中構成相對低的壓 力。或者’可增加抽取速度。於不同的具體實施例中, 共形含石夕與氮膜沉積期間的基材溫度可低於200。(:、 15〇°C、100°c、75°C及50oC中之一。隨著沉積之後, 可硬化及/或退火所沉積之層,以增加膜的氧含量,將參 10 201142073 照第2圖而更詳細地於本文中討論。 現請參見第2圖,其顯示另一流程圖,繪示了根據本 發明之具體實施例的用以在經圖案化基材上形成共形介 電膜之方法200中的經選擇步驟。方法200可包括移轉 經圖案化基材(步驟2〇2)β基材可具有在生產基材上的電 子組件(例如,電晶體)以及内連線的過程期間所存在的 溝槽、間隙及其它垂直特徵結構。可用已於描述第i圖 的過程中所呈現之方法,將共形含碎與氮層沉積於基材 上(步驟204)。 於含矽與氮膜沉積之後,可於含氧氣氛2〇6中或簡單 暴露至含氧氣氛206加熱經圖案化基材。當導入含氧氣 氛時,基材可維持於反應腔室中,或者可將基材轉移至 導入含氧氣氛的不隨室。含氧氣氛可包括—或多種含 氧氣體,如分子氧(〇2)、臭氧(〇3)、水蒸汽(H2〇)及氧化 氮(NO、N〇2等等),以及其它含氧氣體。含氧氣氛也可 包括自由基氧以及羥基物種,如原子氧(〇)、氫氧化物(〇h) 等’其可於遠端產[並傳輸進入基材腔t。含氧物種 的離子也可存在。 3氧氣氛提供了氧氣,以將含矽與氮膜部分或完全轉 化為氧化矽(Si〇2)膜。含矽與氮臈缺少碳導致最終氧化矽 膜中形成顯著較少的孔洞。其也導致在轉化為氧化矽期 201142073 間,膜的較少體積縮小(即’收縮率)β舉例而言,當轉 化為氧切時’自含碳之咬前驅物形成的^氮碳層可 能有40體積%或更高的收縮率,而實質上無碳的石夕與氮 膜的收縮率可能約15體積%或更低1多個具體實施例 中,在暴露至含氧氣氛期間’可加熱經圖案化基材至高 於 50〇C、100。〇、15〇〇c、2〇〇〇c、25〇〇c、3〇〇〇c、4〇〇〇c、 5〇〇。(: ' 6,C、800〇c及1〇〇〇〇c中之一者。於多個具體 實&例中在暴露至含氧氣氛期間,基材溫度可低於 l〇〇〇c、200〇C、300〇c、4〇〇〇c、5〇〇。。、6〇〇。。、_。。、 1000°C 4 i1G(rc中之—者。在不同的具體實施例中, 該等上限中之任一者可結合該等下限中之任一者,以形 成額外的基材溫度範圍。 具體實施例可包含具不同溫度及氣氛的多個加熱階 段。舉例而言,可於較低的第一溫度下,纟包括水蒸汽 (出〇)的軋氛中進行第一加熱階段,而可在較高的第二溫 度下在本質上缺乏水蒸汽的乾燥含氧氣氛中進行第二 加熱階段。也可在非含氧氣氛(例如,乾燥的N2、He、 Ar等等)中進行第三加熱階段。在其它具體實施例中,於 尚溫氧氣(〇2)退火(例如,高於8〇〇〇c)之前,可於低溫(例 如,介於200〇C與400。(:之間)下進行臭氧硬化。於不同 的具體實施例中,含氧氣氛硬化及/或退火可降低折射率 (於193 nm下測量)的實部(reai p〇rti〇n)至低於丄8、 12 201142073 175 h7或丨·65中之一。於不同的具體實施例中,硬化 及/或退火可降低消光係數(折射率的虛部(imaginary P〇rtion)量;同樣於193 nm下測量)至低於〇·15、〇·ι〇、 。於不同的具體實施例中, 且轉化後的消光係數高於 0 075 ' 〇,〇5〇 或 0.025 中之一 轉化為氧化矽是不完全的, 0·010、〇.〇25、〇.〇5〇、〇.〇75 以及 〇1〇 中之 _。在額外 的體實施例中,該等上限中之任一者可結合該等下限 中之任一者,以形成額外的消光係數範圍。 第3圖為流程圖,其繪示根據本發明的具體實施例的 乂於基材上的間隙中形成介電層的方法中之經選 擇步驟。方法300可包括移轉經圖案化基材進入基材處 理區域(步驟302)。基材可具有複數個間隙,供形成於基 材上之裝置組件(例如,電晶體)的間隔與結構所用。間 审可具有冋度及寬度,其定義高度對寬度(即,h/w)的縱 橫比(aSpect rati0 ’ AR),其顯著大於! : 1 (例如,5 :工 或更大6.1或更大、7:1或更大、8:1或更大、9: 1或更大、1〇:1或更大、11:1或更大、12:1或更大, 等等)於許多例子中,高AR是因小的間隙寬度之故, 5亥間隙寬度之範圍介於約9〇 nm至約22 nm或更小(例 如約 90 run、65 nm、45 nm、32 nm、22 nm、16 nm 等 等)。 13 201142073 如參照第2至3圖所描述’共形含石夕與氮層可沉積於 基材上(步驟304)。如本文中所使用,共形層指的是表面 上之大體上一致的材料層與該表面具有相同外形,亦 即’層的表面以及欲覆蓋之表面大 明所屬技術領域中具有通常知識者 體上為平行的。本發 將可理解,所沉積的 材料可能不會100%共形,且因此術語「大體上 (generany)」容許可接受的》差。本文將共形性量化為在 兩個不同位置處所測量之共形層的兩個厚度的比例··其 中-個厚度是在間隙的側壁上’且另一個厚度是在間隙 底部。在跨越晶圓或跨越晶粒之厚度有顯著變化的例子 中,可合理使用來自多個取樣點的平均測量值。請注意, 間隙填充膜之沉積期間所發生的各種效應使壁厚度或底 部厚度皆有可能成為較小者。可將兩個厚度中的較小者 除以較大者之比例轉換為百分比。於不同的具體實施例 中,依此方式所測量之含矽與氮層的共形性可大於 70%、80%、90%及 95% 中之一者。 藉由增加基材處理區域中的壓力,將可流動的含矽與 氮層沉積於共形層上(步驟3〇6)。可藉由增加該等前驅物 (自由基氮前驅物及/或無碳含矽前驅物)令之一或二者的 机速來完成此步驟。交替或結合,可藉由部分關閉闕門 或降低真空泵的實際抽取速度,來降低抽取速度。於不 同的具體實施例中,當可流動的層形成時,基材處理區 201142073 域中的壓力大於 500 mT〇rr、75〇 mT〇rr、1 T〇rr 或 2 Torr 中之一者《共形層的濕潤特性協助可流動層滲透進入間 隙。因為該層可流動,其可填充具高縱橫比的間隙,而 不會在填充材料的中央周圍產生孔洞或弱接縫。舉例而 言,在完全填充間隙之前,沉積可流動的材料較不會過 早阻塞間隙的頂部而在間隙中間留下孔洞。流動性 (flowabilhy)可能成因於將自由基_氮前驅物與無碳矽前 驅物混合所造成的多種性質。這些性質可包括在沉積的 膜中有顯著的氩成分及/或短鏈聚矽氮烷(p〇lysilazane) 聚合物的存在。在膜形成期間及之後,這些短鏈成長並 網路化以形成更密集的介電材料。舉例而言,沉積的膜 可具有矽氮烷類,Si-NH-Si骨幹(即,si-N-H膜)。當矽 前驅物及自由基·氮前驅物兩者為無碳時’所沉積的含矽 與氮膜本質上也為無碳。當然,「無碳」不必然表示膜内 沒有痕量的碳。碳污染物可存在於前驅物材料中而構成 它們進入經沉積的矽與氮前驅物之方式。然而,這些碳 雜質的量遠小於可能在具有碳部分㈣前驅物(例如, TEOS、TMDSO等等)中發現的量。 相似於第i至2圖之先前具體實施例,共形且可流動 的含矽與氮膜之沉積後可跟隨著硬化及/或退火(步驟 綱)。可部分或完全轉化至氧切,並可能影響可流動 的膜及共形沉積的膜二者。含氧氣氛可包括分子氧 '臭 15 201142073 氧及水蒸汽還有其它氣體。於某些例子中,可自包括含 氧氣體的混合物擊發電漿,然而在其它例子中,不從氣 體形成電漿。 進入CVD腔室之含氧氣體可包括一或多種化合物,其 在進入腔室前被活化(例如,激化(radicalize)、離子化等 等)。舉例而言,含氧氣體可包括自由基氧物種、自由基 羥物種等等,其藉由透過遠端電漿源暴露更穩定的前驅 物化合物而活化。更穩定的前驅物可包括產生羥(OH)自 由基與離子之水蒸氣及過氧化氫(H2〇2),以及產生原子 氧(0)自由基與離子之分子氧及/或臭氧。 示範性氧化矽沉積系統 可執行本發明的具體實施例之沉積腔室可包括高密度 電漿化學氣相沉積(HDP-CVD)腔室、電漿增進化學氣相 沉積(PECVD)腔室、次大氣壓化學氣相沉積(SACVD)腔 室以及熱化學氣相沉積腔室,還有其它類型的腔室。可 執行本發明的具體實施例之CVD系統的特定實例包括 可賭自加州聖大克勞拉市(Santa Clara)的 Applied Material,Inc·的 CENTURA ULTIMA® HDP-CVD 腔室 / 系統,以及PRODUCER® PECVD腔室/系統。 可與本發明的示範性方法一起使用之基材處理腔室的 實例可包含那些在Lubomirsky等人於2006年5月30曰 16 201142073 提申且名稱為「PROCESS CHAMBER FOR DIELECTRIC GAPFILL」的共同讓渡美國臨時專利申請案第 60/803,499㉟中所顯示及描述者,其整體内容以為一切 目的參照之方式併入本文中。額外的示範性系統可包括 那些在美國專利第6,387,207及6,830,624號中所示及描 述者,其也以為一切目的參照之方式併入本文中。 沉積系統的具體實施例可併入較大製造系統内,以生 產積體電路晶片。第4圖顯示根據所揭露之具體實施例 的一個此類沉積系統400、烘烤及硬化腔室。於此圖中, 對則開式晶圓盒(front opening unified pod,FOUP) 402 供應基材’基材(例如,3 〇〇 mm直徑之晶圓)由機器人手 ^ 404承接’並在置入晶圓處理腔室408a-f中之一者以 月’J先置入低壓保持區4〇6内。可用第二機器人手臂4 i 〇 以自保持區406向處理腔室4〇8a_f來回移轉基材晶圓。 處理腔室408a-f可包括一或多個系統組件,用以在基 材aa圓上沉積、退火、硬化及/或蝕刻可流動的介電膜。 於—種配置中’兩對處理腔室(例如,408c-d及408e-f) 可用以在基材上沉積可流動的介電材料,且第三對處理 腔室(例如,408a-b)可用來退火經沉積的介電材料。於另 一種配置中,相同的兩對處理腔室(例如,408c-d及408e-f) 可用以在基材上沉積並退火可流動的介電膜,而第三對 17 201142073 腔室(例如’ 408a-b)可田十 ;J用來進行經沉積的膜之UV或E- 光束硬化。於再一種配置中,全部三對腔室(例如,她_f) 可用以在基材上沉積並硬化可流動的介電膜。於又一種 配置中’兩對處理腔室(例如,4〇8c_d及4〇8ef)可用來 進仃可流動的介電膜之沉積及UV或E-光束硬化兩者, 而第—對處理腔室(例如,彻叫可用以退火介電膜。所 述製程中的任-或多纟可在與不同具體實施例所顯示的 製造系統分離之(複數)腔室上進行。 此外,處理腔室408a-f中的一或多者可如濕式處理腔 室般進行配置。這些處理腔室包括在含有濕氣的氣氛中 加熱可流動的介電膜。因此’系統4〇〇的具體實施例可 包括濕式處理腔室408a-b以及退火處理腔室408c-d,以 在沉積的介電膜上進行濕式及乾式退火二者。 第5A圖為根據所揭露之具體實施例的基材處理腔室 5〇〇。遠端電漿系統(RPS) 510可處理氣體,其接著透過 氣體入口總成5 11行進。氣體入口總成5 11内可見到兩 個顯著不同的氣體供應通道。第一通道512承載通過遠 端電漿系統(RPS) 510的氣體,而第二通道513則避開 RPS 500。於所揭露的具體實施例中,第一通道502可供 製程氣體所用,而第二通道513可供處理氣體所用。所 示的蓋體(或導電頂部區域)52 1以及開孔隔板553之間 18 201142073 間設有絕緣環524 ’其容許AC電位施加至相對於開孔隔 板553的蓋體521。製程氣體行進通過第一通道512進 入腔室電敷區域520,且可在腔室電裳區域520中由電 漿單獨激發或與RPS 510聯合激發。於本文中,腔室電 漿區域520及/或RPS510的組合稱為遠端電漿系統。開 孔隔板(又稱為喷灑頭)553隔離腔室電漿區域52〇以及 喷麗頭553下方的基材處理區域570。喷麗頭553容許 電漿存在腔室電漿區域520中,以避免直接於基材處理 區域570中激發氣體,而仍可容許被激發的物種自腔室 電漿區域520行進至基材處理區域570。 接附至基材處理區域的排放系統之抽取速度可經選擇 並配置,以使基材處理區域中的壓力維持在2〇〇 mT〇rr、 150 mTorr、1〇〇 mTorr、75 mTorr 或 50 mTorr 中之一者 以下,以促進共形含矽與氮膜的沉積。 噴灑頭553位於腔室電漿區域520及基材處理區域5 70 之間’且谷許腔室電漿區域520内所生成的電毁流出物 (前驅物或其它氣體的激發衍生物)通過貫穿板厚度的複 數個穿孔556。喷灑頭553也具有一或多個凹陷容積 551 ’其可填充以蒸氣或氣體形式的前驅物(如含石夕前驅 物)’並通過小孔555進入基材處理區域570,而非直接 進入腔室電漿區域520。於此揭露的具體實施例中,喷 19 201142073 灑頭553的厚度大於穿孔556的最小直徑55〇之長度。 為了維持顯著濃度的激發物種自腔室電漿區域52〇滲透 至基材處理區域570,可藉由形成部分通過喷灑頭553 之穿孔556的較大直徑部份來限縮穿孔的最小直徑55〇 之長度526。於所揭露的具體實施例中,穿孔ye的最 小直徑550之長度的數量級,可相等於或小於穿孔556 之最小直徑的數量級。 於所示的具體實施例中,噴灑頭553可(經由穿孔556) 散佈含有氧、氫及/或氮的製程氣體,及/或由腔室電漿區 域520中的電漿所激發之此類製程氣體的電漿流出物。 於多個具體實施例中,透過第一通道512導入Rps 51〇 及/或腔室電漿區域520的製程氣體可含有氧(〇2)、臭氧 (〇3)、乂〇、NO、ΝΑ、ΝΑ、NxHy (包括 Μ#*、矽烷、 二石夕统、TSA以及DSA)中的—或多者。製程氣體也可包 含載氣,如氦、氬、氮(N〇等等。第二通道513也可散 佈製程氣體及/或載氣,及/或用以自生長的膜或沉積的膜 移除非所欲成分之膜-硬化氣體。電漿流出物可包括製程 氣體的離子化或中性衍生物,且在本文中也可代表有關 於導入之製程氣體的原子構成要素之自由基_氧前驅物 及/或自由基-氣則驅物。 於多個具體實施例中’穿孔556的數量可介於約⑽至 20 201142073 約2000之間 成圓形。於所揭露的具體實施例中 穿孔556可具有多種 形狀,但最容易製作 ,穿孔556的最小直 咖之間。還可自由選擇穿孔的截面形狀,其可 被製作成圓錐狀、圓柱狀或兩種形狀的組合。在不同的 八體實施例中’使用來將氣體導人基材處理區域57〇之 小孔555的數量可介於約1〇〇及約5〇〇〇之間,或介於約 及、勺2000之間。小孔555的直徑可介於約0.1 mm 及約2 mm之間。 第5B圖為根據所揭露之具體實施例的與處理腔室— 起使用之喷灑頭553的底部視圖。噴灑頭553相當於第 5A圖中所繪示的喷灑頭。所描繪的穿孔556於喷灑頭553 底。P具有較大的内徑(inner_diameter,id),而在喷灌頭 553頂部具有較小ID。小孔555基本上平均散佈於喷灑 頭表面上,甚至在穿孔556周圍,相較於本文所描述的 其它具體實施例而言,這樣可協助提供更平均的混合。 當透過喷灑頭553中的穿孔556抵達之電漿流出物, 與源自凹陷容積551並透過小孔555抵達之含石夕前驅物 結合時’示範性膜生成於基材處理區域570内之基座(未 綠示)所支撐的基材上。雖然基材處理區域570也可經配 備以維持供諸如硬化等其它製程所用之電漿,但在示範 21 201142073 性膜生長期間’沒有電漿存在。 可在喷灑頭553上的腔室電漿區域52〇中或在喷灑頭 553下的基材處理區域57〇中點燃電漿。電漿存在於腔 至電漿區域520中,以自含氮與氫氣體流入物產生自由 基氮則驅物。將典型在射頻(radi〇 freqUenCy,RF)範圍内 的AC電壓施加於處理腔室的導電頂部份52丨以及喷灑 頭553之間,以於沉積期間點燃腔室電漿區域52〇中的 電漿。RF功率供應器產生13.56 MHz的高RF頻率,但 也可单獨或結合13.56 MHz頻率而產生其它頻率。 當開啟基材處理區域5 7 0中的底部電衆,以硬化膜或 清潔基材處理區域570邊界的内表面時,可讓頂部電漿 處於低功率或無功率狀態。可藉由在噴灑頭553及基座 或腔室底部之間施加AC電壓來點燃基材處理區域57〇 中的電漿。當電漿存在時,可將清潔氣體導入基材處理 區域570。 基座可具有供熱交換流體流動的熱交換通道,以控制 基材的溫度。此配置容許冷卻或加熱基材之溫度,以維 持相對低的溫度(自〇。(:到約120。〇。熱交換流體可包含 乙二醇及水。也可使用配置來做平行同心圓形式的兩個 完整匝數之埋入式單一迴圈埋入加熱器元件,以電阻加 熱基座的晶圓支撐盤(較佳為鋁、陶瓷或其組合)達到相 22 201142073 對问/皿(自約.12〇。(: 一直到約11〇〇〇c)。加熱器元件的外 側伤可鄰近支撐盤的邊緣,而其内側部份可圍繞具有 較小半徑的同心圓之路線。連接加熱器元件的線路通過 基座的座腳。 基材處理系統由系統控制器所控制。於一示範性具體 實施例中’系統控制器包括硬碟機、軟碟機以及處理機。 處理機含有單板電腦(single-board computer,SBC)、類 比及數位輸入/輸出板、介面板以及步進馬達控制器板。 CVD 系統的各種部件符合 versa Modular European(VME) 標準,該標準定義板、卡片機架以及連接器尺寸及類型。 VME標準亦定義具有16位元資料匯流排及24位元位址 匯流排之匯流排結構。 系統控制器控制CVD機器的全部活動。系統控制器執 行系統控制軟體,其為儲存在電腦可讀取媒體中的電腦 程式。較佳地,該媒體為硬碟機,但該媒體也可為其它 類型的記憶體。電腦程式包含多組指令,其支配特定製 程的時點、氣體之混合、腔室壓力、腔室溫度、RF功率 等級、晶座位置以及其它參數。也可使用儲存於其它記 憶體裝置(包含如軟碟或另一適當的磁碟機)的其它電腦 程式來命令系統控制器。 可使用由系統控制器所執行的電腦程式產品來實施於 23 201142073 基材上沉積膜堆疊的製程,或清潔腔室的製程。電腦程 式碼可以任何慣用的電腦可讀取程式語言來撰寫:例 如,68000組合語言、c、c + +、Pasca卜F〇rtran或其它 程式語言。可以慣用的文字編輯器將合適的程式碼輸入 單一槽案或多個檔案中,並儲存或體現於電腦可使用媒 體中,如電腦的記憶體系統。若輸入的程式碼文字係以 尚階语δ撰寫,則編譯該程式碼,並接著將所產生的編 澤器碼連結預先編譯的Microsoft Windows®常式庫 (library routine)之目標碼(〇bject code)。為了執行連結 的、編譯的目標碼,系統使用者援引目標碼,致使電腦 系統載入記憶體中的程式碼。CPU接著讀取並執行程式 碼以進行程式中所指示的任務。 透過平面面板觸控螢幕作為使用者與控制器之間的介 面於較佳的具體實施例中,使用了兩個螢幕,其中一 個安裝於清潔室壁供操作員所用,而另一個安裝於壁後 供服務技師利。在—次只接受—個輸人的例子中,這 兩個螢幕可同步顯示相同的資訊。為了選擇特定畫面或 功能,操作員觸碰觸控螢幕的指定區塊。被碰觸的區塊 改變其& δ己顏色’或者顯示一個新的it單或畫面,以確 認操作員與觸控螢幕之間的溝通。其它裝置,如鍵盤、 ’月鼠或其它指示或溝通裝置可取代或附加至觸控榮幕, 以容許使用者與系統控制器溝通。 24 201142073 腔室電漿區域或RPS中之一區域可稱作遠端電漿區 域。於多個具體實施例中,自由基氮前驅物於遠端電漿 區域中生成,並行進至基材處理區域内,其中無碳含石夕 前驅物藉由自由基氮前驅物激發。於多個具體實施例 中,無碳含矽前驅物僅由自由基氮前驅物激發。於多個 具體貫施例中,電漿功率基本上可僅施加至遠端電漿區 域,以確保自由基氮前驅物對無碳含矽前驅物提供主要 的激發反應。 於本文中,於含矽與氮層成長期間或於某些其它步驟 進行期間,可將基材處理區域描述為「無電漿 (plasma_fl*ee)」mm味著該區域完全沒 有電漿。於電《域生成的離子化物種可行進至基材處 理區域内’但無碳含石夕前驅物本質上不會被施加到電浆 區域的電漿功率所激發。作汹:田^ 赞i難界定腔室電漿區域中之電 漿的邊界,且其可能透過喑 处心噴邐碩中的通孔侵入基材處理 區域上方。在感應耦合電聚 接於基材處理區域中施行。 於基材處理區域中,而不需 於自由激氛刖驅物生成期間 多的強度之電漿的所有成因 電漿」之範疇。 的例子中,少量離子化可直 進—步’低強度電漿可生成 消除形成膜的可流動本性。 ’具有較腔室電漿區域低得 旮不偏離本文中所用的「無 25 201142073 本文使用之「基材(substrate)」可為在其上有或無層形 成之支撐基材。支撐基材可為各種摻㈣度及輪廓之絕 緣體或半導體’且可為’例如在積體電路製造中所使用 之類型的半導體基材。「氧切(sili_ Gxide)」之層用以 作為切與氧㈣的簡寫,且可與切與氧材料交換使 用。就其本身而論,氧化矽可包括其它基礎構成要素, 如氮、氫、碳等等的含量。力某些具體實施例中,氧化 矽基本上由矽與氧組成。術語「前驅物(precurs的)」用來 指示任何製程氣體’其參與自表面上移除材料或沉積材 料至表面上之反應。處於「激發態(excited sute)」的氣 體所描述之氣體中的至少某些氣體分子處於震動激發 態、游離態及/或離子化態。氣體可為兩種以上氣體的組 合。術語「溝槽(trench)」或「間隙(gap)」被使用於本文 各處,且並非暗示蝕刻之幾何形狀具有高水平縱橫比。 自表面之上方觀看,溝槽及間隙可呈現圓形、卵形、多 邊形、矩形或各種其他形狀。 在已揭不若干具體實施例之後,熟習此項技術者將認 識到,在不偏離所揭示之具體實施例之精神的情況下可 使用各種修改、替代構造及等效物。另外,未描述若干 熟知的製程及元件以避免不必要地混淆本發明。因此’ 上文描述不應視為限制本發明之範疇。 26 201142073 在提供一範圍之值之# = ^ 值之清况下,除非本文另有明確指 疋’應理解亦特定地揭示彼 傲乾圍之上限與下限之間的每 一中間值,精確度為至下阳。。 ’’、 限早位的十分位。將涵蓋在陳 述範圍中之任一陳述值或φ 及中間值與在彼陳述範圍中之任 一其他陳述值或中間值之„ & — m飞甲間值之間的每一較小範圍。此等較小 範圍之上限及下限可獨立地包 l匕枯於該範圍中或排除於該 範圍之外,且在界限中任—去 力 者、/又有任一界限或兩界限 皆包括於該等較小範圍中之每一範圍亦涵蓋於本發明 内’其受所陳述範圍中任何特定排除之界限管轄。在所 陳述範圍包括料限财—者或兩者之情況下,亦包括 排除彼等包括之限制中一者或兩者之範圍。 如本文及隨附申請專利範圍中所使用,除非本文另有 明確指定’否則單數形式「一⑷」、「一(an)」及「該(the)」 包括複數指示物。因此,例如,參照「-製程」包括複 數個該等製程,且參照「該前驅物」包括參照一或多個 則驅物及熟習此項技術者熟知之其等效物,等等。 又,當在本專利說明書中及下文申請專利範圍中使用 字彙「包含(comprise)」、「包含(c〇mprising)」、「包括 (include)」、「包括(incIuding)」及「包括(includes)」時, 意欲指定陳述之特徵、整數、組件或步驟之存在,但其 不排除一或多個其他特徵、整數、組件、步驟 '動作或 27 201142073 群組之存在或添加 201142073 【圖式簡單說明】 可藉由參照本專利說明書的其它部分及圖式來實現對 所揭示之實施例之特性及優點的進一步瞭解,其中在多 個圖式之間使用相似的元件符號來指出類似的組件。在 某些例子中,子標號與元件符號有關且伴隨著連字號, 以表示多個類似組件中之―。當提及-元件符號而未載 月見存的子標號時’其意指所有此等多個類似組件。 、,圖為流程圖’其緣示根據本發明之具體實施例的 用以製作共形介電層之經選擇步驟。 用、®為流程圖’其繪示根據本發明之具體實施例的 步Γ成具有可選擇的光學特性之共形介電層的經選擇 第3圖為流程圖,立給+ 4 田、 ^、、、、曰不根據本發明的具體實施例的 、;間隙中形成介電層的經選擇步驟。 統 第4圖顯示根據本發明的具體實施例之基材處理系 第5八 室 圖顯示根據本發明的具體實施例之基材處 理腔
第SB 圖顯示根據本發明& Β μ + l ^ — 貨月的具體實施例之基材處理腔 至的噴灑頭。 29 201142073 【主要元件符號說明】 100、200、300 :方法 102〜108、202〜206、302〜308 :流程步驟 400 :系統 404 :機器人手臂 408a〜408f :處理腔室 500 :基材處理腔室 5 11 :氣體入口總成 513 :第二通道 521 :蓋體/導電頂部區域 526 :長度 551 :凹陷容積 555 :小孔 570 :基材處理區域 4〇2 :前開式晶圓盒 406 :低壓保持區 410 :第二機器人手臂 5 1 〇 :遠端電漿系統 5 12 :第一通道 520 :腔室電漿區域 524 :絕緣環 5 5 0 :穿孔的最小直徑 553 :開孔隔板/喷灑頭 556 :穿孔 30
Claims (1)
- 201142073 七、申請專利範圍: 1. 一種於一基材處理腔室中之一基材處理區域中形成 一共形含矽與氮層於一經圖案化基材上的方法,該方法 包含下列步驟: 將一無碳含矽與氮前驅物與一自由基-氮前驅物混 合,其中藉由接觸該自由基-氮前驅物而主要地激發該無 碳含矽與氮前驅物;以及 於該經圖案化基材上沉積具有一共形層厚度之一共形 含矽與氮層。 2. 如申請專利範圍第1項所述之方法,其中於該共形含 石夕與氮膜沉積期間,該基材處理區域中之一共形沉積壓 力低於或約為200 mTorr。 3. 如申請專利範圍第1項所述之方法,其中於該共形含 石夕與氛膜沉積期間,該基材之一共形沉積溫度低於或約 為 200oC 。 4.如申請專利範圍第1項所述之方法,其中該共形層庳 度低於或約為20 ntn。 5‘如申請專利範圍第1項所述之方法,進一步包含卞列 31 201142073 步驟.藉由使S玄含石夕與氮層暴露至臭氧,將該含石夕與氮 層轉化為一含石夕與氧層。 6·如申請專利範圍第1項所述之方法,其中該無碳含石夕 與氣前驅物包含一石夕烧基胺。 7. 如申請專利範圍第6項所述之方法,其中該矽烷基胺 包含 N(SiH3)3。 8. 如申請專利範圍第1項所述之方法,其中該自由基. 氮前驅物係在與該無碳含矽與氮前驅物混合之前,使用 一電毁自一含氮與氫氣體所產生。 9·如申請專利範圍第8項所述之方法,其中該含氣與览 氣體包含選自由氨、乂及h2所組成之群組中之一氣體。 如申請專利範圍帛W戶斤述之方法,其中該共形含石夕 與氮層包含—無碳Si-N-H層。 如申請專利範圍第i項所述之方法,其中藉由使該含 32 201142073 石夕與氮層暴露至一含氧氣氛’將該共形含矽與氮層轉化 為該氧化矽層。 12. 如申請專利範圍第11項所述之方法·,其中該含氧氣 氛包含選自由氧氣、臭氧以及水蒸汽所組成之群組中之 一或多種氣體。 13. —種形成具降低的體積收縮率之一含矽層的方法,該 方法包含下列步驟: 移轉含有一間隙之一基材; 於該基材上沉積一共形含矽與氮層,其中該共形含石夕 與氮層具有一共形性;以及 於該共形含石夕與氛層上沉積一可流動的含砂與氮層, 其中該含矽層包含該共形含矽與氮層以及該可流動的含 矽與氮層二者。 14. 如申請專利範圍第13項所述之方法,進一步包含下 列步驟.於一含氧氣氣中加熱該含碎層,以增加氧含量, 其中該含矽層保留沉積於該間隙中之該無碳含石夕與氮層 之約85%以上之體積。 15·如申请專利範圍第13項所述之方法,其中該共形含 矽與氮層之該共形性大於或約為80%。 33 201142073 16.如申請專利範圍第13項所述之方法其中該共形含 矽與氮層係藉由一含矽與氮前驅物與一自由基_氮前驅 物之反應沉積於該基材上,其中該自由基_氮前驅物對該 矽與氮前驅物提供主導性激發。 1 7.如申請專利範圍第1 6項所述之方法,其中該含矽與 氮前驅物包含N(SiH3)3,且該自由基-氮前驅物係形成自 電漿·活化之NH3。 18. 如申請專利範圍第14項所述之方法,其中該含氧氣 氛包含〇2、03或H20中之至少一者。 19. 如申請專利範圍第13項所述之方法,其中該間隙中 之該含矽層為實質上無孔的。 20. 如申請專利範圍第1 6項所述之方法,其中該含矽與 氮層包含一 Si-N-H層。 21. 如申清專利範圍第13項所述之方法,其中該共形含 矽與氮層包含一 Si-N-H層。 22. 如申請專利範圍第13項所述之方法,其中該基材間 隙具有約50 nm或更小之寬度° 34
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- 2011-02-10 SG SG2012065074A patent/SG183873A1/en unknown
- 2011-02-10 CN CN2011800187794A patent/CN102844848A/zh active Pending
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WO2011109148A2 (en) | 2011-09-09 |
WO2011109148A3 (en) | 2012-02-23 |
JP2013521650A (ja) | 2013-06-10 |
SG183873A1 (en) | 2012-10-30 |
KR20130014543A (ko) | 2013-02-07 |
KR101853802B1 (ko) | 2018-05-02 |
CN102844848A (zh) | 2012-12-26 |
US8563445B2 (en) | 2013-10-22 |
US20110217851A1 (en) | 2011-09-08 |
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