200522238 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於將半導體元件或表面安裝構件 等安裝構件，安裝在樹脂基板或玻璃基板等基板上的接合 方法及所用之裝置，尤其關於有效率地將安裝構件安裝在 基板上之技術。 【先前技術】 例如，先前於基板（例如液晶、EL ( Electro Luminescence:電數發光、電漿顯示器等平面顯示板）） 之製造步驟中，將安裝構件（例如半導體晶片等）安裝在 基板。將安裝構件（以下簡稱爲「晶片」）安裝在基板的 接合方法，係於基板和晶片之間介置樹脂，例如各向異性 導電性膜（ACF: Anisotropic Conductive Film)或非導 電性樹脂（NCP: Non-Conductive Paste)，一面將加熱壓 接裝置從晶片上方推壓，一面將樹脂加熱硬化而將晶片加 熱壓接在基板。 具體而言，如第1圖所示，在多接合頭以各個頭部3 1 和支持構件7夾住每一晶片4而加熱壓接。 但是，於此種接合裝置之情形，有如以下之問題。 即，於晶片各個有厚度不均，若不將頭部推壓在每一 晶片，則有無法以良好的精確度固接在基板之不良情形。 且，全部以加熱工具介置彈性材料推壓時，即使可吸 收晶片之厚度不均，仍由於彈性材料較厚而不易傳導熱。 即使從基板側以加熱台加熱，於玻璃基板等熱傳導率較低 的基板時，安裝效率仍將惡化。 200522238 且，由於鄰接的晶片彼此之節距較窄，無法以比晶片 形狀大型的頭部同時地將鄰接的晶片加熱壓接。因此，如 第1圖所示，例如必須配備頭部3 1將晶片4 一次一個加熱 壓接。即，由於無法將多數個晶片4 一次加熱壓接，而有 作業效率不佳之不良情形。 且，此時，照射用於從下方加熱硬化的紅外線時，關 於頭部未推壓的晶片部分，該處之樹脂未受加壓而硬化’ 例如使用 ACF時，樹脂內的導電粒子不接觸在晶片側的突 起和基板電極，結果，有產生導通不良之問題。 0 且，若欲避免上述之導通不良，必須裝設隔斷對未施 加頭部加壓的晶片部分照射紅外線之構件等，裝置結構較 複雜，並產生招致作業效率降低之不良情形。 且，直接在以高溫將晶片加熱的狀態解除加壓時’由 於樹脂在玻璃轉移點（Tg )以上而未完全地硬化。因此’ 帶著高溫造成的晶片和基板之熱膨脹差所造成的變形 '彎 曲而解除加壓，因爲該變形、彎曲而在推壓的電極和突起 間產生間隙，亦有引起電阻値增加、接合不良之問題。 再者，由於晶片和基板的線膨脹係數不同，因此在將 鲁 樹脂加熱硬化後的冷卻過程，因爲晶片和基板的收縮量之 差而產生彎曲，由於該彎曲之影響而引起在接合晶片和基 板的樹脂產生龜裂、電阻値增加或接合不良之問題。 【發明内容】 本發明之目的在於提供一種將安裝構件有效率地安裝 在基板的接合方法及所用之裝置。 本發明係爲了達成此種目的而採用如以下之結構° 200522238 於在安裝構件和基板之間介置樹脂而將安裝構件安裝 在基板的結合方法中，前述方法係包含以下之過程·· 於在基板上的多數個安裝構件和加壓裝置之間介置彈 性材料之狀態，將藉由支持加壓裝置和基板的支持構件夾 住的多數個安裝構件同時地加壓之加壓過程；及 在處於前述加壓狀態的前述樹脂照射紅外線而加熱硬 化之加熱過程。 根據本發明之接合方法，介置彈性材料覆蓋基板上的 多數個安裝構件，藉由從該彈性材料上方以加壓裝置同時 地加壓之方式，而藉由彈性材料吸收晶片之厚度不均，而 將晶片均等地加壓。此時，從基板側照射的紅外線係透過 基板將樹脂加熱硬化。因而，可一次有效率地將多數個安 裝構件安裝在基板上。 此外，樹脂係混入導電粒子者爲佳。即，介置包含導 電粒子的樹脂將安裝構件加熱壓接在基板。因而，由於將 多數個安裝構件平均地加熱，因此包含在樹脂之導電粒子 亦均等地彈性變形，結果，由於可充分地確保導電粒子對 安裝構件及基板之接觸面積，因此可避免電阻値不良。 且，基板係平面顯示板爲佳。根據該方法之發明，由 於一次加熱壓接基板上的安裝構件，因此不須如多接合頭 般進行經由多數次之加熱處理。因而，適合容易受到對熱 之應力的平面顯示板。且，由於平面顯示板係容易透過紅 外線的玻璃基板，因此適合本方式。 且，本發明係爲了達成此種目的’亦採用如以下之結 構。 200522238 在本發明的接合方法中，前述方法係進一步包含以下 之過程： 將前述樹脂加熱硬化後，從冷卻到玻璃轉移點附近起 解除安裝構件的加壓之冷卻過程。 根據本發明之接合方法，將安裝構件加熱壓接在基板 後，冷卻到對應該樹脂的玻璃轉移點附近以下。因而，樹 脂形成大致完全地硬化狀態，且由於從到達低溫起解除加 壓，因此可防止因爲基板和晶片的熱膨脹係數差等所造成 的變形、彎曲，而可在全部的電極獲得良好之接續。 此外，於加熱過程，同時地將支持構件加熱爲佳。根 胃 據該方法，藉由將支持構件加熱的方式，將從支持構件輸 出的熱傳達到基板。因而，由於將晶片和基板兩方加熱使 兩構件到達大致相同的溫度，而可緩和因爲兩構件的熱膨 脹係數之差而產生的彎曲。尤其，基板爲平面顯示板時， 由於紅外線係透過基板，因此提高支持構件的溫度而使熱 從支持構件直接地傳達到平面顯示板爲佳。 且，彈性體係具有隔熱性之構件爲佳。根據該方法， 由於以具有隔熱性之彈性體覆蓋安裝構件，因此可防止熱 · 從被接合面通過彈性體而洩漏。因而，可進一步有效地進 行樹脂之加熱硬化。 且，本發明係爲了達成此種目的，亦採用如以下之結 構。 於在安裝構件和基板之間介置樹脂而將安裝構件安裝 在基板的接合裝置中，前述裝置係包含以下之要素： 保持台，裝載保持前述基板； 200522238 單一^的加壓裝置，將目U述裝載的基板上之多數個安裝 構件同時地加壓； 彈性材料，將前述多數個安裝構件加壓時，介置在安 裝構件和加壓裝置之間； 支持構件，從下方支持安裝前述基板的前述安裝構件 之部分；及 加熱裝置，從前述基板的下方照射紅外線而將樹脂加 熱硬化。 根據本發明之接合裝置，裝載保持在保持台的基板上 之多數個安裝構件，係介置彈性材料而藉由單一的加壓裝 β 置從上方同時地加壓，並藉由支持構件從下方介置基板支 持。此時，從基板下方照射紅外線而將樹脂加熱硬化。因 而，可一次有效率地將多數個安裝構件安裝在基板上。 此外，支持構件係玻璃支持構件，留下該玻璃支持構 件的基板表面之一部分而以金屬膜被覆其他部分，形成從 加熱裝置輸出的紅外線係通過該玻璃支持構件而僅照射安 裝在基板上的晶片部分之輸出部爲佳。 根據該結構，從加熱裝置輸出之紅外線，係通過玻璃 · 支持構件而僅照射基板上安裝有安裝構件之處。因而，由 於僅將基板局部性地加熱，因此可避免基板全體之溫度上 升，結果，適於利用在如平面顯示板般熱應力較弱的基板。 且，以金屬膜被覆玻璃支持構件，且與紅外線照射同 時地將玻璃支持構件加熱爲佳。 根據該結構，藉由將玻璃支持構件並用金屬膜且熱射 線吸收板玻璃之方式，提高玻璃支持構件本身的溫度而當 -10· 200522238 作加熱器作用。因而，藉由直接將熱從支持基板的玻璃支 持構件前端部傳達到安裝有晶片的基板部分，並藉由紅外 線照射之加熱，可進一步有效率地進行樹脂之加熱硬化。 且，由於可將玻璃支持構件當作加熱器利用，因此不須另 外裝設加熱器。 此外，被覆玻璃支持構件的金屬膜係鋁、金、銅、鉻 之任一種爲佳。 且，本發明係爲了達成此種目的，亦採用如以下之結 構。 在本發明的接合裝置中，前述裝置係進一步包含以下 之要素： 將前述玻璃支持構件加熱之加熱器。 根據該結構，藉由以加熱器將玻璃支持構件加熱之方 式，將玻璃支持構件輸出的熱直接傳達到基板。因而，使 用不易因爲紅外線透過而溫度上升之玻璃基板時，可降低 基板和安裝構件之溫度差。 此外，加熱裝置係具有內部以金屬膜被覆之橢圓體形 空間，構成將放射的紅外線反射在金屬膜，且集光而輸出 爲佳。 根據該結構，藉由以金屬膜被覆具有形成橢圓體形之 內部空間的加熱裝置之內壁的方式，而在內部金屬膜反射 放射之紅外線，且集光而輸出。因而，僅可在基板上的安 裝構件之處照射紅外線。且，可將紅外線集光而照射在特 定處，而可有效率地將樹脂加熱。此外，在此處，所謂橢 圓體形係該縱剖面爲橢圓形，且具有深度者。 -11 - 200522238 且’本發明係爲了達成此種目的，亦採用如以下之結 構。 在本發明的接合裝置中，前述裝置係進一步包含以下 之要素： 將加熱硬化的樹脂冷卻到玻璃轉移點附近以下的冷卻 裝置。 根據該結構’藉由將安裝構件加熱硬化在基板後，以 送風等冷卻裝置冷卻之方式，可冷卻到對應該樹脂的玻璃 轉移點附近以下。因而，樹脂形成大致完全地硬化狀態， 且由於從到達低溫後解除加壓，因此可防止由基板和晶片 的熱膨脹差所造成之變形、彎曲，而可在全部的電極獲得 良好之接續。 且，本發明係爲了達成此種目的，亦採用如以下之結 構。 在本發明的接合裝置中，前述裝置係進一步包含下之 要素： 朝向基板內面側傳送氣體之氣體噴嘴。 根據該結構，藉由在基板內面側裝設氣體噴嘴的方式， 將樹脂加熱硬化而將安裝構件加熱壓接在基板時，僅在安 裝部分照射紅外線而加熱，其他之基板內面區域則藉由氣 體冷卻。因而，例如，基板係玻璃基板，內面具有偏光膜 時，可冷卻保護耐熱性較低之偏光膜。 【實施方式】 以下，參照圖式說明本發明之一實施例。 〈第1實施例〉 -12- 200522238 於本實施例採用之說明例，係使用ACP ( Ani sot ropic Conductive Paste:各向異性導電樹脂）、ACF、NCP、NCF (N ο n - C ο n d u c t i v e F i 1 m :非導電性膜）等樹脂，將安裝構 件之晶片安裝在基板之情形。 此外，本發明中的「安裝構件」，係與例如IC晶片、 半導體晶片、光元件、表面安裝零件、晶片、晶圓、TCp( Tape Carrier Package: $| 送膠帶封裝體）、FPC( Fiexible Printed C i r c u i t e :可撓式印刷電路）等的種類或大小無關，而表 示與基板接合之側的全部形態，且可視爲對平面顯示板晶 片接合之COG ( Chip On Glass :玻璃基板晶片接合技術） 或TCP’及FPC接合之〇LB( Out Lead Bonding:外界腳端 接合）。 且，本發明中的「基板」係表示例如樹脂基板、玻璃 基板、薄膜基板等，容易透過紅外光或容易吸收而加熱之 基板即可。 且，本發明中從加熱裝置輸出之「紅外線」，例如係 表示含遠紅外部分或近紅外部分的波長者。此外，近紅外 線係例如波長在8 0 0〜1 2 0 0 n m的範圍爲佳。 首先’參照圖式具體地說明關於使用在本實施例之裝 置。 第2圖係表示關於本發明的接合裝置之壓接裝置之槪 略結構立體圖’第3圖係表示實施例裝置之主要部結構側 視圖，第4圖係表示實施例裝置的槪略結構側視圖。 如第2圖所示，本發明中的壓接裝置1係具備：可動 台3，將從不圖示的暫時壓接單元搬運來的基板2水平保 -13- 200522238 持；加壓裝置5，從上方將晶片4加壓；彈性構件6，介置 在晶片4和加壓裝置5之間；玻璃支持構件7，從基板2 下方以加壓裝置5夾住晶片4而支持；紅外線照射部8， 將樹脂加熱硬化；冷卻裝置9，將基板2冷卻。 如第2圖所示，可動台3係具備吸附保持基板2的基 板保持台1 0，該基板保持台1 〇係於水平2軸（X、γ )方 向、上下（Z)方向及Z軸周圍（0)方向，構成各自自由 移動。 加壓裝置5係與配設在該裝置5上方的氣筒1 1連結， 且具備可上下移動的頭部1 2。該頭部1 2係凸形狀且朝向 ® 基板2的晶片整排方向延伸。即，在凸部前端隔介彈性材 料6將多數個晶片4同時地加壓。 將彈性材料6懸架在配備成夾住位於待機位置之頭部 1 2的捲繞滾筒1 3和輸出滾筒1 4，而介置在加壓裝置5和 晶片4之間。此外，藉由捲繞該彈性材料6的方式，形成 從輸出滾筒1 4供給新的彈性材料6。此外，於彈性材料6 使用例如加入玻璃的政基板等。較佳爲具有隔熱性之彈性 材料。 籲 藉由使用具有隔熱性的彈性材料之方式，可防止從晶 片2的非接合面側傳達到彈性材料的熱洩漏。因而.，可更 有效率地進行樹脂之加熱硬化。 此外’彈性材料6的厚度係根據使用的構件等而適當 地變更。 如第2圖及第3圖所示，玻璃支持構件7係具有平坦 部之推拔狀，其前端可支持安裝晶片4的基板2之內面部 -14· 200522238 分，且與加壓裝置5同樣地朝向基板2的晶片整排方向延 伸。且，在該基板側表面（於第3圖爲上方）的傾斜部1 5 蒸鍍鋁，且僅平坦部開口。即，從紅外線照射部8輸出的 紅外線係通過玻璃支持構件7，且僅從開口部1 6輸出，形 成照射基板上的樹脂。 且，藉由在玻璃支持構件7的傾斜部1 5蒸鍍鋁的方式， 由於紅外線不會從該處洩漏，因此紅外線不會照射基板上 未安裝有晶片4之處。且，藉由並用熱射線吸收板玻璃之 方式，將玻璃支持構件7加熱，而可藉由該熱將基板2加 熱。 因而，僅將基板2局部性地加熱而可避免基板全體之 溫度上升。且，玻璃支持構件7本身係僅使紅外線通過， 而不會如加熱器般地蓄積過度的熱，結果，基板2不會受 到從玻璃支持構件7本身產生的熱所造成之應力。 如第2圖及第4圖所示，紅外線照射部8係其外觀爲 方塊狀，配備在玻璃支持構件7的下方。其內部係具有橢 圓體形的空間1 7，在底部具備放射紅外線（例如，近紅外 線或遠紅外線）的加熱器1 8。且，其內壁係藉由金屬膜1 9， 例如金等覆蓋。此外，紅外線照射部8係相當於本發明之 加熱裝置。 即，從加熱器1 8放射的紅外線係藉由內壁之金屬膜}9 反射，且輸出側的開口部，即如第4圖的箭頭所示，朝向 玻璃支持構件7集光而輸出。 如第3圖所示，將冷卻裝置9配備在玻璃支持構件7 的左右方，而將氣體供給到玻璃支持構件7的傾斜部丨5和 -15- 200522238 基板2的內面側之間。即，將照射紅外線的基板內面部分 及鄰接在基板2的玻璃支持構件7的傾斜部1 5之表面冷 卻。 第4圖所示之控制部20係完成樹脂的加熱硬化處理 時，從冷卻裝置9供給儀體使基板2及玻璃支持構件7冷 卻，並於基板溫度到達樹脂之玻璃轉移點（Tg )時，停止 氣體之供給。 該冷卻等之時間或條件的設定方法，係藉由事前測試 一面檢測晶片4、基板2、樹脂之各溫度，一面設定條件。 因此，實際安裝時，由於根據預先求出的條件和時間控制 溫度等，因此不須實測溫度等。 且，高速冷卻時，從基板上部直接對晶片4和樹脂， 及基板上部送風爲佳。 接著，一面參照圖式說明關於使用上述之實施例裝置， 且以 ACF將晶片安裝在基板之一套動作。此外，於本實施 例，採用說明之例爲相對於在前步驟之暫時壓接步驟，於 將晶片預先暫時壓接在基板之狀態而搬運者，而將晶片完 全地壓接在基板之情形。 在前段之暫時壓接步驟，將隔介樹脂暫時壓接晶片 4 的基板2，藉由不圖示之搬運機構搬運到壓接裝置1。將該 基板2移載到可動台3的基板保持台1 〇且吸附保持。基板 保持台1 0係藉由不圖示之驅動機構，朝向前方（第2圖之 Y方向），即頭部1 2和玻璃支持構件7之間移動，且進行 基板2的對位，以頭部1 2和玻璃支持構件7從上下方向夾 住晶片4。 -16- 200522238 完成基板2的對位時，藉由不圖示之驅動機構降下頭 部1 2，以該頭部1 2和位於基板2下側的玻璃支持構件7 同時地夾住多數個晶片4。此時，藉由頭部1 2同時降下介 置在晶片4和頭部1 2之間的彈性材料6，同時地覆蓋整齊 排列在基板上而安裝之多數個晶片4。即，如第5圖所示， 加壓時彈性材料6係吸收晶片4的厚度不均，且在各晶片 4施加大致平均的壓力。 因而，位於晶片4側的突起2 1和基板電極2 2之間的 導電粒子2 3亦平均地彈性變形，且充分地確保兩電極間的 | 接觸電阻。 以頭部1 2和玻璃支持構件7夾住晶片4時，從紅外線 照射部8輸出紅外線。如第4圖所示，紅外線係於紅外線 照射部8的內壁反射，且於輸出側的開口部集光而朝向玻 璃支持構件7輸出。 輸出的紅外線係通過玻璃支持構件7，從基板側的開 口部1 6以集光狀態輸出。輸出的紅外光（紅外線）係不僅 在基板2 (玻璃基板）吸收，且透過基板2亦於樹脂及晶 片4吸收，有效率地將樹脂加熱硬化。尤其，吸收紅外線 鲁 的基板2和晶片4係該等本身溫度上升，且將該熱傳達到 樹脂’因而，紅外線僅照射在基板上安裝有晶片4之處， 並可實現僅將安裝部分加熱。 將紅外線照射特定時間時即完成紅外線之照射，且從 冷卻裝置9供給氣體而將基板2從內面及/或上面冷卻。 於到達Tg溫度附近以下時，解除加壓且使頭部1 2復 歸到上方之待機位置，將基板保持台1 〇移動到基板傳送位 -17- 200522238 置。藉由不圖示之基板搬運機構將移動到傳送位置的基板 2搬運到基板收容單元，收容在基板回收盒。 以上係於一塊基板2完成晶片4之接合。 如上述，藉由在多數個晶片4和頭部1 2之間介置彈性 材料6而加熱壓接的方式，彈性材料6吸收每一晶片4的 厚度不均，且可一次將多數個晶片4均等地加熱壓接在基 板2，而可縮短加熱壓接時間，即謀求作業效率之提高。 且，藉由利用在基板側表面裝設輸出紅外線的開口部 1 6且以金屬膜被覆其他部分的玻璃支持構件7，和以金屬 _ 膜1 9被覆內部空間1 7的內壁全面且將在內部反射的紅外 線集光而輸出之紅外線照射部8之方式，可將紅外線僅照 射在基板2之安裝有晶片4之處。因而，僅局部性地提高 基板2的溫度，而可避免基板全體之溫度上升。 如上述，紅外線透過基板且可進一步更加硬化樹脂。 如上述，由於可縮短對基板2的加熱時間及避免基板 全體之溫度上升，因此在如熱應力較弱的平面顯示板之基 板，可有效地利用本實施例裝置。 再者，將樹脂加熱硬化後，藉由從冷卻到玻璃轉移點 0 起解除頭部1 2之加壓的方式，樹脂形成大致完全地硬化之 狀態。即，由於以低溫解除加壓，可消除因爲基板2和晶 片4的熱膨脹差而產生的變形、彎曲。結果，可獲得確實 地安裝晶片4之基板。 〈第2實施例〉 本實施例之裝置結構由於僅加壓裝置周圍與前述的第 1實施例裝置不同，因此在相同之處維持附加相同符號， -18- 200522238 而說明關於相異之部分。 第6圖係表示關於本發明之接合裝置的主要部結構之 前視圖。 如第6圖所示，壓接裝置係包含：可動台3，將從不 圖示之暫時壓接單元搬運來的基板2水平保持；加壓裝置 5，將晶片4從上方加壓；彈性材料6，介置在晶片4和加 壓裝置5之間；玻璃支持構件7，從基板2的下方以加壓 裝置5夾住晶片4而支持；加熱器5 0，將玻璃支持構件7 加熱；紅外線照射部 8 ;噴嘴5 1，從各上方及下方朝向基 板2供給氣體；及控制部5 3，整體地控制該等各結構。 如第2圖所示，可動台3係具備吸附保持基板2的基 板保持台1 0，該基板保持台1 0係於水平2軸（X、Y )方 向、上下（Y)方向及Z軸周圍（0)方向，構成各自自由 移動。 加壓裝置5的頭部1 2係裝設有不圖示之加熱器（例如 陶瓷加熱器）及使冷卻媒體循環之流路。即，將樹脂加熱 硬化時，藉由加熱器將頭部1 2加熱，且將彈性材料6加熱。 藉由以加熱器將彈性材料6加熱之方式，可將晶片4吸收 紅外線而獲得之熱，熱傳達到接觸在非接合側的彈性材料 6而避免損失。即’彈性材料6對沒有隔熱性或隔熱性較 低之物較有效。 ， 且，流路係於壓接之加熱後的冷卻過程中，用於將頭 部1 2冷卻者。具體而言，裝設在加熱器上部使冷卻媒體， 例如氣體或冷卻水在流路循環。 加熱器5 0係將玻璃支持構件7加熱，且用於藉由該熱 -19- 200522238 將基板2加熱者。如第6圖所示，該加熱器5 0係從基板2 隔開特定距離而安裝在玻璃支持構件7的側壁，藉由控制 部5 3控制溫度。 配備在基板下方的噴嘴5 1係於將玻璃支持構件7加熱 時，用於控制玻璃支持構件7接觸在基板2的部分之附近 區域的熱傳達者，朝向基板內面供給氣體。 此外，噴嘴51係對應從控制部5 3輸出的控制信號， 藉由閥V的開閉操作而從氣體供給源5 5供給氣體。 控制部5 3係整體地進行將玻璃支持構件7加熱之加熱 器50的溫度調節，及從用於將基板2及晶片4冷卻之噴嘴 5 1供給氣體之調節等。此外，關於具體上的各部控制將後 述。 接著係使用上述之壓接裝置將晶片壓接在基板上的樹 脂（ACF )部分之情形，說明關於在樹脂加熱硬化後的冷卻 過程中，一面調節溫度一面將晶片固設在基板之方法。以 下，順著第7圖之流程圖說明關於具體的方法。 〈步驟S 1〉基板對位 藉由不圖示之搬運機構將基板2搬運到壓接裝置。將 該基板4移載到可動台3的基板保持台1 〇而吸附保持。基 板保持台1 0係藉由不圖示之驅動機構，朝向前方（第2圖 之Υ方向），即頭部1 2和玻璃支持構件7之間移動，且進 行基板2之對位，隔介彈性材料6而以頭部1 2和玻璃支持 構件7從上下方向夾住晶片4。 〈步驟S 2〉加熱步驟 樹脂係藉由控制部5 3調節紅外線I R對安裝部分的照 -20- 200522238 射程度（例如，藉由輸出程度或切換開啓·關閉）及照射 時間，例如形成1 9 0 °C以上。ACF時的設定溫度’較佳爲 2 0 0〜2 2 0 °C之範圍。因爲設定溫度低於1 9 0 °c時將損及促進 樹脂之硬化。超過220 °C ’甚至到達240°C以上時’樹脂之 耐熱將有問題。 此外，此時從噴嘴51朝向基板內面供給氣體’且進行 晶片安裝部分以外的區域之冷卻。β卩’對具備耐熱性較低 的偏光膜之玻璃基板有效。 〈步驟S 3〉開始冷卻 完成加熱步驟時，開始冷卻使樹脂溫度到達Tg溫度。 具體而言，用以下的程序進行冷卻。 首先，從控制部5 3根據加熱OFF信號而開放不圖示之 閥，開始將氣體供給到頭部內。隨著該氣體之供給而將頭 部內的加熱器冷卻。此時，樹脂係因空氣開放狀態之冷卻 和積極地將頭部1 2冷卻的方式之傳熱而得到冷卻效果。 對應各樹脂的Tg溫度附近，例如ACF時，到達Tg溫 度+ 2 0 °C時停止頭部1 2之冷卻，且控制部5 3係將閥V開放 操作而從基板下方的噴嘴5 1朝向晶片4供給氣體，並調節 加熱器5 0的溫度。 此外，該等溫度調節的時間或條件的設定方法，係藉 由事前測試一面檢測晶片4、基板2及樹脂的各溫度，一 面進行條件設定。 〈步驟S 4〉解除加壓 冷卻溫度到達Tg溫度時，解除頭部1 2對晶片4之加 壓，且將頭部1 2復歸到上方待機位置。 -21 - 200522238 〈步驟S 5〉取出基板 解除頭部1 2之加壓時，基板保持台1 〇移動到基板傳 送位置。藉由不圖示之基板傳送機構將移動到傳送位置的 基板2搬運到基板收容單元，收容在基板回收盒。 以上係於一塊基板2完成晶片4之壓接。 本發明並不限於上述之實施例，亦可如以下變形實施。 (1 )於上述實施例，以金屬膜被覆紅外線照射部的內 部空間之內壁全面，但以金屬膜被覆一部分亦可。例如， 僅將第4圖所示之下半部分以金屬膜被覆亦可。 且，將紅外線照射部形成可分隔成上下之結構亦可。 以此種方式，可謀求維護之提升。 (1 )於上述實施例，將鋁蒸鍍在玻璃支持構件7的傾 斜部1 5，但取代鋁而例如蒸鍍金、銅、鉻等亦可。 藉由並用熱射線吸收板玻璃的方式，金屬部分的溫度 將隨著紅外線照射而上升，玻璃支持構件7本身的溫度亦 提高’而可將玻璃支持構件7當作加熱器利用。即，玻璃 支持構件7的溫度上升，而從與基板2抵接的前端部直接 將熱傳達到基板2。 因而，使樹脂硬化時，藉由紅外線照射將晶片4和樹 脂加熱，並亦同時地將基板2加熱，晶片4和基板2上升 到大致相同溫度。於該狀態將樹脂加熱且將晶片4安裝在 基板2，其後藉由將晶片4和基板2同時冷卻到樹脂大致 完全地硬化之T g溫度附近的方式，緩和因爲晶片4和基板 2的熱膨脹係數之差而產生之彎曲，而將晶片4確實地固 設在基板2。 -22- 200522238 尤其’使用如平面顯示板之玻璃基板時，由於晶片4 和玻璃基板的熱膨脹係數大致等於3 ppm，因此藉由將晶片 4和基板同時加熱及同時冷卻的方式，可進一步緩和彎曲 之產生。 且’由於玻璃基板係使紅外線透過而不易蓄積熱，因 此從玻璃支持構件7直接地將熱傳達到玻璃基板爲佳。 且’將晶片4安裝在平面顯示板時，使熱之應力施加 在基板全體之方式較爲不佳。因此，將玻璃支持構件7當 作加熱器利用時，將送風傳送到玻璃支持構件7的傾斜部 1 5而不將金屬膜傳出的放射熱賦予在基板2，從抵接在基 板之玻璃支持構件7前端將熱局部地傳達爲佳。 【圖式簡單說明】 圖示目前認爲適當之數種形態，用於說明發明，但應 了解並非限定於如圖示發明之結構及方法者。 第1圖係表示先前的接合裝置之槪略結構立體圖。 第2圖係表示關於第1及第2實施例的接合裝置之槪 略結構立體圖。 第3圖係表示關於第1實施例裝置之頭部周邊的主要 部結構剖視圖。 第4圖係表示實施例裝置的主要部結構剖視圖。 第5圖係表示將晶片加熱壓接在基板的狀態之剖視 圖。 第6圖係表示關於第2實施例裝置之頭部周邊的主要 部結構槪略結構圖。 -23- 200522238 第7圖係表示第2實施例裝置的壓接方法之流程圖。 【主要元件符號說明】 1 壓 接 裝 置 2 基 板 3 可 動 台 4 晶 片 5 加 壓 裝 置 6 彈 性 材 料 7 玻 璃 支 持構 件 8 紅 外 線 照射 部 9 冷 卻 裝 置 10 基 板 保 持台 11 氣 筒 12、 3 1 頭 部 13 捲 繞 滾 筒 14 輸 出 滾 筒 15 傾 斜 部 16 開 □ 部 17 空 間 18、 50 加 熱 器 19 金 屬 膜 20 ^ 53 控 制 部 21 突 起 22 基 板 電 極200522238 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a bonding method and a device for mounting a mounting element such as a semiconductor element or a surface mounting member on a substrate such as a resin substrate or a glass substrate, especially A technology for efficiently mounting a mounting member on a substrate. [Prior Technology] For example, a mounting member (for example, a semiconductor wafer, etc.) was previously mounted on a substrate in a manufacturing step of a substrate (for example, a liquid crystal display or an EL (Electro Luminescence: flat display panel such as a plasma display)). A bonding method for mounting a mounting member (hereinafter referred to as a "wafer") on a substrate is a resin interposed between the substrate and the wafer, such as an anisotropic conductive film (ACF: Anisotropic Conductive Film) or a non-conductive resin (NCP) : Non-Conductive Paste), while pressing the heating and crimping device from above the wafer, heat-hardening the resin while heating and crimping the wafer to the substrate. Specifically, as shown in FIG. 1, each wafer 4 is sandwiched between the head 3 1 and the support member 7 in the multi-joint head, and the wafer 4 is heat-pressed. However, in the case of such a bonding device, there are the following problems. That is, there is uneven thickness on each wafer, and if the head is not pressed on each wafer, there is a problem that it cannot be fixed to the substrate with good accuracy. In addition, when the elastic material is pressed by interposing the heating tool, even if the thickness of the absorbable wafer is uneven, it is difficult to conduct heat due to the thick elastic material. Even if the substrate is heated by a heating stage, the mounting efficiency will be deteriorated when the substrate has a low thermal conductivity, such as a glass substrate. 200522238 In addition, due to the narrow pitch of adjacent wafers, the adjacent wafers cannot be heated and pressure-bonded simultaneously with a head larger than the shape of the wafer. Therefore, as shown in FIG. 1, for example, a head 31 must be provided to heat and compress the wafer 4 one at a time. That is, since a large number of wafers 4 cannot be heated and crimped at one time, there is a disadvantage that the work efficiency is not good. And, at this time, when irradiating infrared rays for heat curing from below, the resin on the part of the wafer that is not pushed by the head is hardened without being pressed. For example, when using ACF, the conductive particles in the resin do not contact As a result, the wafer-side protrusions and the substrate electrodes have a problem of poor conduction. In addition, in order to avoid the above-mentioned poor conduction, it is necessary to install a member that blocks infrared rays from being irradiated to the part of the wafer to which the head pressure is not applied. The device structure is complicated, and a disadvantageous situation that leads to a decrease in operating efficiency is generated. When the pressure is released while the wafer is being heated at a high temperature, the resin is not completely cured because the resin is above the glass transition point (Tg). Therefore, "the deformation caused by the difference in thermal expansion between the wafer and the substrate due to high temperature" is used to bend and release the pressure. Because of the deformation and bending, a gap is generated between the electrode and the protrusion that is pressed, and the resistance 値 is increased, and the bonding is not good Problem. In addition, because the linear expansion coefficients of the wafer and the substrate are different, during the cooling process after heating and curing the resin, bending occurs due to the difference between the shrinkage of the wafer and the substrate, and the wafer and the substrate are bonded due to the influence of the bending The resin produced problems such as cracks, increased resistance, or poor bonding. SUMMARY OF THE INVENTION An object of the present invention is to provide a bonding method and a device for efficiently mounting a mounting member on a substrate. In order to achieve such an object, the present invention adopts the following structure. 200522238 In a bonding method for mounting a mounting member on a substrate by interposing a resin between the mounting member and the substrate, the aforementioned method includes the following processes: A state where an elastic material is interposed between the plurality of mounting members on the substrate and the pressing device, and a pressing process in which the plurality of mounting members sandwiched by the supporting pressing device and the substrate supporting member are simultaneously pressed; and A heating process in which the aforementioned resin in the aforementioned pressurized state is irradiated with infrared rays and heat-hardened. According to the bonding method of the present invention, a plurality of mounting members on the substrate are interposed with an elastic material, and the uneven thickness of the wafer is absorbed by the elastic material by means of simultaneous pressing by a pressing device from above the elastic material. Instead, the wafer is pressed uniformly. At this time, infrared rays radiated from the substrate side are transmitted through the substrate to heat-harden the resin. Therefore, a plurality of mounting members can be efficiently mounted on the substrate at one time. In addition, it is preferable that the resin is mixed with conductive particles. That is, the mounting member is thermally and pressure-bonded to the substrate by interposing a resin containing conductive particles. Therefore, since the plurality of mounting members are evenly heated, the conductive particles included in the resin are also elastically deformed uniformly. As a result, the contact area of the conductive particles to the mounting members and the substrate can be sufficiently ensured, so that resistance defects can be avoided. The substrate is preferably a flat display panel. According to the invention of this method, since the mounting member on the substrate is heated and pressed once, there is no need to perform a plurality of times of heat treatment like a multi-joint head. Therefore, it is suitable for a flat display panel that is susceptible to heat stress. In addition, since the flat display panel is a glass substrate that easily transmits infrared rays, it is suitable for this method. In addition, in order to achieve such an object, the present invention also adopts the following structure. 200522238 In the joining method of the present invention, the aforementioned method further includes the following process: a cooling process in which the pressure of the mounting member is released from the cooling to the vicinity of the glass transition point after the resin is heated and hardened. According to the bonding method of the present invention, the mounting member is heated and pressure-bonded to the substrate, and then cooled below the vicinity of the glass transition point corresponding to the resin. Therefore, the resin is almost completely hardened, and since the pressure is released from reaching a low temperature, it is possible to prevent deformation and warping caused by the difference in thermal expansion coefficients between the substrate and the wafer, and to obtain a good connection at all electrodes. In addition, it is preferable to simultaneously heat the supporting member during the heating process. According to this method, the heat output from the support member is transferred to the substrate by heating the support member. Therefore, since both the wafer and the substrate are heated to bring the two members to approximately the same temperature, bending caused by the difference in the thermal expansion coefficients of the two members can be reduced. In particular, when the substrate is a flat display panel, since the infrared rays are transmitted through the substrate, it is preferable to increase the temperature of the support member and directly transfer heat from the support member to the flat display panel. Moreover, it is preferable that the elastic system has a heat insulating member. According to this method, since the mounting member is covered with an elastic body having heat insulation properties, it is possible to prevent heat from leaking from the joined surface through the elastic body. Therefore, heat curing of the resin can be performed more effectively. In order to achieve such an object, the present invention also adopts the following structure. In a bonding apparatus for mounting a mounting member on a substrate by interposing a resin between the mounting member and the substrate, the aforementioned device includes the following elements: a holding table for holding and holding the aforementioned substrate; 200522238 a single pressurizing device; A plurality of mounting members on the loaded substrate are simultaneously pressurized; an elastic material is interposed between the mounting member and the pressing device when the plurality of mounting members are pressurized; a supporting member supports the mounting of the substrate from below A part of the mounting member; and a heating device that heats and hardens the resin by irradiating infrared rays from below the substrate. According to the bonding apparatus of the present invention, the plurality of mounting members held on the substrate of the holding table are loaded with an elastic material and simultaneously pressed from above by a single pressing device β, and from below by the supporting member. Intermediate substrate support. At this time, the resin is heat-cured by irradiating infrared rays from below the substrate. Therefore, a plurality of mounting members can be efficiently mounted on the substrate at one time. In addition, the supporting member is a glass supporting member, and a part of the substrate surface of the glass supporting member is left while other portions are covered with a metal film, so that infrared rays output from the heating device are irradiated to the wafer mounted on the substrate only through the glass supporting member. Some output parts are better. According to this structure, the infrared rays output from the heating device pass through the glass support member and irradiate only the place where the mounting member is mounted on the substrate. Therefore, since the substrate is only locally heated, the temperature of the entire substrate can be prevented from increasing. As a result, it is suitable to use a substrate having a weak thermal stress like a flat display panel. Further, it is preferable to cover the glass supporting member with a metal film and heat the glass supporting member simultaneously with infrared irradiation. According to this structure, by using a glass supporting member in combination with a metal film and a heat ray absorbing plate glass, the temperature of the glass supporting member itself is increased and -10 · 200522238 functions as a heater. Therefore, by directly transmitting heat from the front end portion of the glass support member that supports the substrate to the substrate portion on which the wafer is mounted, and heating by infrared radiation, the resin can be further heat-hardened efficiently. Furthermore, since the glass supporting member can be used as a heater, it is not necessary to install a separate heater. In addition, the metal film of the glass supporting member is preferably any one of aluminum, gold, copper, and chromium. In order to achieve such an object, the present invention also adopts the following structure. In the bonding device of the present invention, the device further includes the following elements: a heater for heating the glass support member. According to this structure, the heat output from the glass support member is directly transmitted to the substrate by heating the glass support member with a heater. Therefore, when using a glass substrate that is hard to increase in temperature due to infrared transmission, the temperature difference between the substrate and the mounting member can be reduced. In addition, the heating device has an ellipsoid-shaped space covered with a metal film inside, and is configured to reflect the emitted infrared rays on the metal film and to collect light and output it. According to this configuration, the inner wall of the heating device having an ellipsoidal inner space is covered with a metal film, and the emitted infrared rays are reflected in the inner metal film, and the light is collected and output. Therefore, infrared rays can be irradiated only at the place where the member is mounted on the substrate. In addition, infrared rays can be collected and irradiated to a specific place, and the resin can be efficiently heated. Here, the so-called ellipsoidal shape is one in which the longitudinal section is elliptical and has a depth. -11-200522238 In addition, the present invention adopts a structure as follows in order to achieve such an object. In the bonding apparatus of the present invention, the aforementioned apparatus further includes the following elements: a cooling apparatus that cools the heat-cured resin to a temperature below or near the glass transition point. According to this structure, it is possible to cool the mounting member below the vicinity of the glass transition point corresponding to the resin by heating and hardening the mounting member on the substrate, and then cooling the cooling means such as a blower. Therefore, the resin is almost completely hardened, and since the pressure is released after reaching a low temperature, deformation and warping caused by the difference in thermal expansion between the substrate and the wafer can be prevented, and a good connection can be obtained at all the electrodes. In order to achieve such an object, the present invention also adopts the following structure. In the bonding apparatus of the present invention, the aforementioned apparatus further includes the following elements: a gas nozzle that transfers a gas toward an inner surface side of the substrate. According to this structure, when a gas nozzle is installed on the inner surface side of the substrate, the resin is heated and hardened, and the mounting member is heated and pressure-bonded to the substrate. Only the mounting portion is irradiated with infrared rays to heat, and other inner surface areas Cooled by gas. Therefore, for example, when the substrate is a glass substrate and a polarizing film is provided on the inner surface, the polarizing film having low heat resistance can be cooled and protected. [Embodiment] An embodiment of the present invention will be described below with reference to the drawings. 〈First Embodiment〉 -12- 200522238 The explanation example used in this embodiment uses ACP (Ani sot ropic Conductive Paste: Anisotropic Conductive Resin), ACF, NCP, NCF (N ο n-C ο nductive F i 1 m: Non-conductive film) and other resins, when the wafer of the mounting member is mounted on the substrate. In addition, the "mounting member" in the present invention relates to, for example, an IC chip, a semiconductor wafer, an optical element, a surface mount part, a wafer, a wafer, a TCp (Tape Carrier Package: $ | C ircuite (flexible printed circuit) is not related to the type or size of the substrate, but represents the entire form of the side to which the substrate is bonded, and can be regarded as COG (Chip On Glass: Chip Bonding Technology for Glass Substrate) for flat display panel wafer bonding or TCP 'and FPC bonding LB (Out Lead Bonding: external foot bonding). The "substrate" in the present invention means, for example, a resin substrate, a glass substrate, a thin film substrate, and the like, which may be a substrate that is easily transmitted through infrared light or easily absorbed and heated. In addition, the "infrared" output from the heating device in the present invention means, for example, a wavelength including a far-infrared portion or a near-infrared portion. In addition, the near-infrared line system preferably has, for example, a wavelength in a range of 800 to 12 nm. First, the apparatus used in this embodiment will be specifically described with reference to the drawings. FIG. 2 is a perspective view showing a schematic structure of a crimping device of the bonding device according to the present invention. FIG. 3 is a side view showing the structure of the main part of the embodiment device, and FIG. 4 is a side view showing the outline of the device of the embodiment. . As shown in FIG. 2, the crimping device 1 in the present invention is provided with: a movable table 3 that holds the substrate 2 horizontally held from a temporary crimping unit (not shown); The wafer 4 is pressed from above; the elastic member 6 is interposed between the wafer 4 and the pressing device 5; the glass support member 7 is supported by sandwiching the wafer 4 with the pressing device 5 from below the substrate 2; The resin is heated and hardened; the cooling device 9 cools the substrate 2. As shown in FIG. 2, the movable stage 3 is provided with a substrate holding stage 10 that holds and holds the substrate 2. The substrate holding stage 10 is in the horizontal 2 axis (X, γ) direction, the up and down (Z) direction, and around the Z axis. The (0) direction constitutes each free movement. The pressurizing device 5 is connected to a gas cylinder 11 arranged above the device 5 and includes a head 12 that can move up and down. The head 12 is convex and extends toward the wafer alignment direction of the ® substrate 2. That is, a plurality of wafers 4 are simultaneously pressed by the elastic material 6 at the tip of the convex portion. The elastic material 6 is suspended between the winding drum 13 and the output drum 14 which are provided to sandwich the head 12 in the standby position, and is interposed between the pressing device 5 and the wafer 4. In addition, a new elastic material 6 is supplied from the output roller 14 by winding the elastic material 6. In addition, for the elastic material 6, a glass substrate or the like is used. An elastic material having heat insulation is preferred. By using an elastic material having thermal insulation properties, it is possible to prevent heat leakage from being transmitted to the elastic material from the non-joint surface side of the wafer 2. Therefore, heat curing of the resin can be performed more efficiently. The thickness of the 'elastic material 6 is appropriately changed depending on the member and the like to be used. As shown in FIG. 2 and FIG. 3, the glass support member 7 has a push-out shape with a flat portion, and its front end can support the inner surface of the substrate 2 on which the wafer 4 is mounted. The ground extends toward the wafer alignment direction of the substrate 2. In addition, aluminum is vapor-deposited on the inclined portion 15 of the substrate side surface (upward in FIG. 3), and only the flat portion is opened. That is, the infrared rays output from the infrared irradiation section 8 pass through the glass support member 7 and are output only from the opening section 16 to form a resin on the substrate to be irradiated. In addition, since aluminum is vapor-deposited on the inclined portion 15 of the glass supporting member 7, since infrared rays are not leaked therefrom, infrared rays are not irradiated on the substrate where the wafer 4 is not mounted. Furthermore, the glass support member 7 is heated by using the heat ray absorbing plate glass in combination, and the substrate 2 can be heated by the heat. Therefore, it is possible to prevent the temperature of the entire substrate from rising only by locally heating the substrate 2. In addition, the glass supporting member 7 itself passes only infrared rays, and does not accumulate excessive heat like a heater. As a result, the substrate 2 is not subjected to stress caused by the heat generated from the glass supporting member 7 itself. As shown in Figs. 2 and 4, the infrared irradiating portion 8 has a block-like appearance and is provided below the glass support member 7. The interior has an elliptical space 17 and a heater 18 that emits infrared rays (for example, near infrared rays or far infrared rays) at the bottom. The inner wall is covered with a metal film 19 such as gold. The infrared irradiation section 8 corresponds to the heating device of the present invention. That is, the infrared rays emitted from the heater 18 are reflected by the metal film} 9 on the inner wall, and the opening on the output side, as shown by the arrow in FIG. 4, collects light toward the glass support member 7 and outputs it. As shown in FIG. 3, the cooling device 9 is provided on the left and right sides of the glass support member 7, and gas is supplied between the inclined portion 5 of the glass support member 7 and the inner surface side of the base plate 2. That is, the inner surface portion of the substrate irradiated with infrared rays and the surface of the inclined portion 15 of the glass support member 7 adjacent to the substrate 2 are cooled. When the control unit 20 shown in FIG. 4 completes the heat curing treatment of the resin, the instrument body is supplied from the cooling device 9 to cool the substrate 2 and the glass supporting member 7 and when the substrate temperature reaches the glass transition point (Tg) of the resin, Stop the supply of gas. The method of setting the time or conditions for cooling or the like is to set the conditions while detecting the temperatures of the wafer 4, the substrate 2, and the resin by testing in advance. Therefore, in actual installation, it is not necessary to measure the temperature, etc., because the temperature and the like are controlled according to the conditions and time obtained in advance. In addition, during high-speed cooling, it is preferable to directly blow the wafer 4 and the resin from the upper portion of the substrate, and to blow air from the upper portion of the substrate. Next, referring to the drawings, a description will be given of a set of operations using the above-mentioned device and mounting a wafer on a substrate using ACF. In addition, in the present embodiment, the explanation example is a case where the wafer is completely crimped to the substrate in a state where the wafer is temporarily crimped to the substrate in advance to the temporary crimping step of the previous step, and the wafer is completely crimped to the substrate. In the temporary crimping step of the previous stage, the substrate 2 of the wafer 4 is temporarily crimped with the interposing resin, and transferred to the crimping device 1 by a conveying mechanism (not shown). This substrate 2 is transferred to the substrate holding stage 10 of the movable stage 3 and held by suction. The substrate holding table 10 is moved forward by a driving mechanism (not shown) in the direction of Y (Figure 2), that is, the head 12 and the glass support member 7 are moved, and the substrate 2 is aligned to the head. The portion 12 and the glass support member 7 sandwich the wafer 4 from the vertical direction. -16- 200522238 When the alignment of the substrate 2 is completed, the head 12 is lowered by a driving mechanism (not shown), and a plurality of wafers are simultaneously held by the head 12 and the glass support member 7 located on the lower side of the substrate 2 4. At this time, the head 12 simultaneously lowers the elastic material 6 interposed between the wafer 4 and the head 12 at the same time, and simultaneously covers a plurality of wafers 4 arranged neatly on the substrate to be mounted. That is, as shown in FIG. 5, the elastic material 6 absorbs uneven thickness of the wafers 4 under pressure, and applies approximately even pressure to each wafer 4. Therefore, the conductive particles 2 3 between the protrusion 21 on the wafer 4 side and the substrate electrode 22 are also elastically deformed uniformly, and the contact resistance between the two electrodes is sufficiently secured. When the wafer 4 is sandwiched between the head portion 12 and the glass supporting member 7, infrared rays are output from the infrared irradiation portion 8. As shown in Fig. 4, the infrared rays are reflected on the inner wall of the infrared irradiation section 8, and the light is collected at the opening on the output side and output toward the glass support member 7. The output infrared light passes through the glass support member 7 and is output from the opening 16 on the substrate side in a light-collecting state. The output infrared light (infrared) is not only absorbed by the substrate 2 (glass substrate), but also absorbed by the resin and the wafer 4 through the substrate 2 to efficiently heat-harden the resin. In particular, the substrate 2 and the wafer 4 which absorb infrared rays rise in temperature themselves and transmit the heat to the resin '. Therefore, the infrared rays are irradiated only to the place where the wafer 4 is mounted, and only the mounting portion can be heated. When the infrared rays are irradiated for a specific time, the infrared rays are irradiated, and the gas is supplied from the cooling device 9 to cool the substrate 2 from the inner surface and / or the upper surface. When the temperature reaches below the Tg temperature, the pressure is released and the head 12 is returned to the upper standby position, and the substrate holding table 10 is moved to the substrate transfer position -17-200522238. The substrate 2 moved to the transfer position is transferred to a substrate storage unit by a substrate transfer mechanism (not shown) and stored in a substrate recovery box. The above is to complete the bonding of the wafer 4 on a substrate 2. As described above, the elastic material 6 absorbs the uneven thickness of each wafer 4 by interposing the elastic material 6 between the plurality of wafers 4 and the head portion 12 and heating and crimping the plurality of wafers 4 at a time. The substrate 2 is uniformly heated and crimped, and the heating and crimping time can be shortened, that is, work efficiency can be improved. In addition, by using an opening portion 16 for outputting infrared rays provided on the side surface of the substrate and covering other parts of the glass support member 7 with a metal film, and covering the inner wall of the internal space 17 with a metal film 19, The internally reflected infrared rays are collected and output by the infrared irradiating section 8. The infrared rays can be irradiated only on the substrate 2 where the wafer 4 is mounted. Therefore, the temperature of the substrate 2 is raised only locally, and the temperature rise of the entire substrate can be avoided. As described above, the infrared rays are transmitted through the substrate and the resin can be further hardened. As described above, since the heating time for the substrate 2 can be shortened and the temperature of the entire substrate can be prevented from rising, the device of this embodiment can be effectively used on a substrate such as a flat display panel with weak thermal stress. Further, after the resin is heated and hardened, the resin is hardened almost completely by releasing the pressure of the head 12 from cooling to the glass transition point 0. That is, since the pressure is released at a low temperature, it is possible to eliminate deformation and bending caused by the difference in thermal expansion between the substrate 2 and the wafer 4. As a result, a substrate on which the wafer 4 is surely mounted can be obtained. <Second Embodiment> The structure of the device of this embodiment is different from the device of the first embodiment only in the surroundings of the pressurizing device. Therefore, the same reference numerals are kept in the same place, -18-200522238, and the differences will be described. Fig. 6 is a front view showing the structure of a main part of the joining device of the present invention. As shown in FIG. 6, the crimping device includes: a movable table 3 that holds the substrate 2 carried from a temporary crimping unit (not shown) horizontally; a pressing device 5 that presses the wafer 4 from above; an elastic material 6. It is interposed between the wafer 4 and the pressing device 5. The glass support member 7 is supported by sandwiching the wafer 4 by the pressing device 5 from below the substrate 2. The heater 50 is used to heat the glass supporting member 7. The irradiating unit 8; the nozzle 51 supplies gas to the substrate 2 from above and below each; and the control unit 53 controls the respective structures as a whole. As shown in FIG. 2, the movable table 3 is a substrate holding table 10 having an adsorption holding substrate 2, and the substrate holding table 10 is in the horizontal 2 axis (X, Y) direction, the up and down (Y) direction, and around the Z axis. The (0) direction constitutes each free movement. The head 12 of the pressurizing device 5 is provided with a heater (for example, a ceramic heater) (not shown) and a flow path for circulating a cooling medium. That is, when the resin is heated and hardened, the head 12 is heated by the heater, and the elastic material 6 is heated. By heating the elastic material 6 with a heater, the heat obtained by absorbing infrared rays from the wafer 4 can be transmitted to the elastic material 6 in contact with the non-joining side to avoid loss. That is, the 'elastic material 6 is effective for a substance having no or low heat insulation properties. Moreover, the flow path is used for cooling the head portion 12 during the cooling process after the crimping and heating. Specifically, a cooling medium, such as a gas or cooling water, is installed on the heater to circulate in the flow path. The heater 50 is used to heat the glass support member 7 and is used to heat the substrate 2 by the heat. As shown in FIG. 6, the heater 50 is mounted on the side wall of the glass support member 7 at a predetermined distance from the substrate 2, and the temperature is controlled by the control unit 53. The nozzle 51 provided below the substrate is a heat transmitter for controlling the glass support member 7 in a region near the portion of the substrate 2 when the glass support member 7 is heated, and supplies gas toward the inner surface of the substrate. The nozzle 51 corresponds to a control signal output from the control unit 53, and supplies gas from the gas supply source 55 by the opening and closing operation of the valve V. The control unit 53 performs temperature adjustment of the heater 50 for heating the glass supporting member 7 as a whole, adjustment of the supply of gas from the nozzle 51 for cooling the substrate 2 and the wafer 4, and the like. The specific control of each part will be described later. Next, the case where the wafer is crimped to the resin (ACF) portion of the substrate using the above-mentioned crimping device will be described as a method of fixing the wafer to the substrate while adjusting the temperature during the cooling process after the resin is heated and hardened. The specific method is described below along the flowchart in FIG. 7. <Step S 1> Substrate alignment The substrate 2 is transferred to a crimping apparatus by a transfer mechanism (not shown). This substrate 4 is transferred to the substrate holding stage 10 of the movable stage 3 and held by suction. The substrate holding table 10 is moved forward by a driving mechanism (not shown in the figure), that is, the substrate holding table 10 is moved between the head 12 and the glass supporting member 7, and the substrate 2 is aligned and separated. The wafer 4 is sandwiched by the elastic material 6 with the head portion 12 and the glass support member 7 from above and below. 〈Step S 2〉 In the heating step, the resin is adjusted by the control unit 5 3 to irradiate the infrared part to the installation part. Above 0 ° C. The setting temperature at the time of ACF is preferably in the range of 200 to 220 ° C. Because the setting temperature is lower than 190 ° C, it will impair the hardening of the resin. Above 220 ° C ′, even when it reaches 240 ° C or higher, the heat resistance of the resin will be problematic. In addition, at this time, gas is supplied from the nozzle 51 toward the inner surface of the substrate, and the area other than the wafer mounting portion is cooled. β 卩 'is effective for a glass substrate having a polarizing film having low heat resistance. <Step S 3> Start cooling When the heating step is completed, the cooling is started to bring the resin temperature to the Tg temperature. Specifically, cooling was performed using the following procedure. First, the control unit 53 opens a valve (not shown) in response to the heating OFF signal, and starts supplying gas to the head. As the gas is supplied, the heater in the head is cooled. At this time, the resin system obtains a cooling effect due to the cooling in the air-open state and the heat transfer in a manner of actively cooling the head 12. Corresponding to the Tg temperature of each resin, for example, when the ACF reaches Tg temperature + 20 ° C, the cooling of the head 12 is stopped, and the control unit 5 3 opens the valve V to face the wafer from the nozzle 51 below the substrate. 4 Supply the gas and adjust the temperature of the heater 50. In addition, the method of setting the time or conditions for these temperature adjustments is to set the conditions while testing each temperature of the wafer 4, the substrate 2, and the resin by testing in advance. <Step S 4> When the cooling temperature reaches Tg, the head 12 releases the pressure on the wafer 4 and returns the head 12 to the upper standby position. -21-200522238 <Step S 5> Take out the substrate. When the pressure of the head 12 is released, the substrate holding table 10 moves to the substrate transfer position. The substrate 2 moved to the transfer position is transferred to a substrate storage unit by a substrate transfer mechanism (not shown) and stored in a substrate collection box. The above is to complete the crimping of the wafer 4 on a substrate 2. The present invention is not limited to the above-mentioned embodiments, and may be implemented in the following variations. (1) In the above embodiment, the inner wall of the inner space of the infrared irradiated portion is covered with a metal film on the entire surface, but a portion of the inner wall may be covered with a metal film. For example, only the lower half shown in FIG. 4 may be covered with a metal film. In addition, the infrared irradiating portion may be formed in a structure that can be divided into upper and lower portions. In this way, an improvement in maintenance can be sought. (1) In the above embodiment, aluminum is vapor-deposited on the inclined portion 15 of the glass support member 7. Instead of aluminum, for example, gold, copper, chromium, or the like may be vapor-deposited. By using the heat ray absorbing plate glass in combination, the temperature of the metal portion will rise with the irradiation of infrared rays, and the temperature of the glass supporting member 7 itself will also increase ', and the glass supporting member 7 can be used as a heater. That is, the temperature of the glass supporting member 7 rises, and the heat is directly transmitted to the substrate 2 from the front end portion abutting the substrate 2. Therefore, when the resin is cured, the wafer 4 and the resin are heated by infrared irradiation, and the substrate 2 is also heated at the same time, and the wafer 4 and the substrate 2 are raised to approximately the same temperature. In this state, the resin is heated and the wafer 4 is mounted on the substrate 2. Thereafter, the wafer 4 and the substrate 2 are simultaneously cooled to a temperature near the T g temperature at which the resin is substantially completely hardened, and the thermal expansion due to the wafer 4 and the substrate 2 is alleviated. The warpage caused by the difference in coefficients secures the wafer 4 to the substrate 2. -22- 200522238 Especially when using a glass substrate such as a flat display panel, since the thermal expansion coefficient of wafer 4 and the glass substrate is approximately equal to 3 ppm, the wafer 4 and the substrate can be heated and cooled at the same time to further reduce the bending. To produce. Furthermore, since the glass substrate transmits infrared rays and does not easily accumulate heat, it is preferable to directly transfer heat from the glass support member 7 to the glass substrate. Furthermore, when the wafer 4 is mounted on a flat display panel, the method of applying heat stress to the entire substrate is not good. Therefore, when the glass support member 7 is used as a heater, the air is transmitted to the inclined portion 15 of the glass support member 7 without radiating heat emitted from the metal film to the substrate 2 and supporting the glass from the abutting substrate. The front end of the member 7 preferably transmits heat locally. [Brief Description of the Drawings] The drawings are currently considered suitable for explaining the invention, but it should be understood that the invention is not limited to the structure and method of the invention as shown in the drawings. FIG. 1 is a perspective view showing a schematic structure of a conventional bonding device. Fig. 2 is a perspective view showing a schematic configuration of the bonding apparatus according to the first and second embodiments. Fig. 3 is a cross-sectional view showing the structure of the main parts around the head of the device of the first embodiment. Fig. 4 is a sectional view showing the structure of a main part of the apparatus of the embodiment. Fig. 5 is a cross-sectional view showing a state in which the wafer is thermally pressure-bonded to the substrate. Fig. 6 is a schematic structural diagram showing the structure of the main parts around the head of the device of the second embodiment. -23- 200522238 FIG. 7 is a flowchart showing a crimping method of the device of the second embodiment. [Description of main component symbols] 1 Crimping device 2 Substrate 3 Movable stage 4 Wafer 5 Pressurizing device 6 Elastic material 7 Glass support member 8 Infrared irradiation section 9 Cooling device 10 Substrate holding table 11 Air cylinder 12, 3 1 Head 13 Winding Roller 14 Output roller 15 Inclined section 16 Open section 17 Space 18, 50 Heater 19 Metal film 20 ^ 53 Control section 21 Protrusion 22 Substrate electrode
24- 200522238 22 基板電極 23 導電粒子 51 噴嘴 53 控制部 55 氣體供給源 IR 紅外線 Tg 玻璃轉移點 X、Y 水平2軸方向 Z 上下方向 Θ Z軸周圍方向 -25-24- 200522238 22 Substrate electrode 23 Conductive particle 51 Nozzle 53 Control unit 55 Gas source IR Infrared Tg Glass transition point X, Y Horizontal 2 axis direction Z Up and down direction Θ Z axis around direction -25-