CN100426479C - Bonding method and apparatus - Google Patents
Bonding method and apparatus Download PDFInfo
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- CN100426479C CN100426479C CNB2004100858875A CN200410085887A CN100426479C CN 100426479 C CN100426479 C CN 100426479C CN B2004100858875 A CNB2004100858875 A CN B2004100858875A CN 200410085887 A CN200410085887 A CN 200410085887A CN 100426479 C CN100426479 C CN 100426479C
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- 239000000758 substrate Substances 0.000 claims abstract description 198
- 239000011347 resin Substances 0.000 claims abstract description 68
- 229920005989 resin Polymers 0.000 claims abstract description 68
- 239000011521 glass Substances 0.000 claims description 77
- 238000009434 installation Methods 0.000 claims description 67
- 239000013536 elastomeric material Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
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- 238000007664 blowing Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75317—Removable auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Provided are bonding method and its device for effectively mounting a mounting member on a substrate. A plurality of aligned chips are pressed with a head from the upper portion of an elastic member which is interposed between these chips and the head to cover the chips. The elastic member 6 uniformly pressurizes the chips by absorbing variations of the thickness thereof for every chip, and infrared rays emitted and focused from an infrared ray irradiation part located below the substrate irradiate only the rear surface of the substrate on which the chip is mounted, to heat and cure the resin of the substrate. It is therefore possible to simultaneously mount the plurality of the chips on the substrate and to avoid thermal stress which might be otherwise exerted on the entire substrate.
Description
Technical field
The present invention relates on the substrate of resin substrate and glass substrate etc., to carry out the bridging method and the device thereof of installation usefulness of the installation component of semiconductor element and surface mounted component etc., particularly relate to the mounting technique of on substrate, carrying out installation component expeditiously.
Background technology
For example, in the manufacturing process of traditional substrate (such as the flat display floater of liquid crystal, EL (Electro Luminescence), plasma demonstration etc.), installation component (such as semiconductor chip etc.) is installed on the substrate.As installation component (being designated hereinafter simply as " chip ") is installed in the bridging method on the substrate, have a kind of be with resin, be clipped between substrate and the chip to different conductive film (ACF:Anisotropic ConductiveFilm) and non-conductive resin (NCP:Non-Conductive Paste) etc. such as each, to add thermo-compression bonding device on one side pushes from the chip top, make the resin heat hardening on one side, heating is crimped on the substrate.
Specifically, as shown in Figure 1, use a plurality of heads in the mode that head 31 and brace table 7 are clamped each chip 4 to be added thermo-compressed respectively.
Yet, when adopting this lap device, exist following problem.
That is, on each chip, exist the deviation of thickness, can occur if not with head by being pressed on each chip then the unfavorable condition that can not high accuracy be fixed on the substrate.
In the occasion of totally pushing by elastomeric material, promptly enable the deviation of absorbent core sheet thickness, because of the elastomeric material thickening, so do not readily conduct heat by heating tool again.Even use heating station to heat, when being the substrate of heat conduction rate variance of glass substrate etc., can worsen installation effectiveness from substrate-side.
Because the mutual spacing of the chip of adjacency is little, can not add thermo-compressed than the big head of chip simultaneously to the chip of adjacency with shape, therefore, and as shown in Figure 1, such as being equipped with head 31 to skip the mode that 1 chip 4 adds thermo-compressed.That is, because of not adding thermo-compressed to a plurality of chips 4 once, so exist the unfavorable condition of operating efficiency difference.
At this moment, for heat hardening during from below irradiation infrared ray, the chip part that be not pressed, the resin at this position is hardened under uninflated situation, such as in the occasion of having used ACF, conducting particles in the resin does not contact with electrode of substrate with the briquetting of chip side, and the result exists the problem that poor flow takes place.
If want the poor flow of avoiding above-mentioned, must to set member that the infrared ray that will partly shine to the chip that is not pressurized to by head covers etc., not only make apparatus structure complicated, and can cause the adverse consequences of operating efficiency decline.
If under the state that keeps heat, remove the pressurization that chip is carried out, then resin is in more than the glass transition point (Tg), so can not harden fully, like this, become under the distortion deflection profile that the difference in the thermal expansion that has chip that Yin Gaowen causes and substrate causes and remove pressurization, because of this distortion deflection meeting makes between the electrode that is pressed and the briquetting gap taking place, exists the problem that resistance value increases, overlap joint is bad that causes.
And, because chip is different with the coefficient of linear expansion of substrate, so in the cooling procedure after the resin heat hardening, because of the missionary society of the amount of contraction of chip and substrate causes deflection, be subjected to the influence of this deflection, chapping, also exist and cause resistance value to increase, engage bad problem on chip and the resin that substrate engages.
Summary of the invention
The objective of the invention is to, the bridging method and the device thereof that can carry out the installation of installation component expeditiously on substrate are provided.
To achieve these goals, the present invention has adopted following structure.
Bridging method of the present invention carries out the installation of installation component with resin clip between installation component and substrate, on substrate, described method comprises following process:
Under a plurality of installation components and the state between the pressue device that elastomeric material are clipped in alignment arrangements on the substrate, sandwich the pressure process that shape ground pressurizes simultaneously to a plurality of installation components by pressue device with to the supporting member that substrate supports; And
The heating process of utilizing heater to carry out heat hardening to the described resin irradiation infrared ray that is in described pressurized state, wherein, the vertical section of described heater is an ellipticity, dispose installation component is relative with light source at this long axis of ellipse end, the elliptic space that the inwall of heater is formed with the metal film lining forms in the whole orientation of installation component, and this heater constitutes to each installation position irradiation infrared ray.
Adopt bridging method of the present invention, owing to a plurality of installation components on the substrate are accompanied elastomeric material with being covered shapes, use pressue device to pressurize simultaneously, therefore from the top of this elastomeric material, absorb by the thickness deviation of elastomeric material, chip is carried out the equalization pressurization chip.At this moment, the infrared ray from the substrate-side irradiation makes the resin heat hardening through substrate.Thus can be expeditiously be installed on the substrate a plurality of installation components are disposable.
And, adopt this structure, will have the inwall lining of heater of the inner space of ellipsoid shaped by using metal film, by the metal film of inside infrared reflection, the laggard line output of optically focused with radiation.Like this, infrared ray only can be shone the position of the installation component on the substrate.And, infrared ray optically focused can be shone to the regulation position, can heat resin expeditiously.In addition, so-called ellipsoid shaped is meant that its vertical section is ellipsoid shaped and the shape with degree of depth.
As resin, preferably sneak into the resin of conducting particles again.That is, accompanying the resin ground that comprises conducting particles is crimped on the installation component heating on the substrate.Like this, because of a plurality of installation components pressurized equably, so also strain equably of the conducting particles that contains in the resin.The result can fully guarantee the contact area of conducting particles to installation component and substrate, can avoid resistance value bad.
Again, the preferably flat display floater of substrate adopts this method of the present invention, because of the installation component one-time heating crimping on the substrate, so do not need to resemble the heat treated of carrying out a plurality of heads repeatedly.Therefore, be applicable to the flat display floater of acceptant stress to heat.Again, because flat display floater is the glass substrate that a kind of infrared ray sees through easily, so be applicable to the manner.
Again, to achieve these goals, the present invention has also adopted following structure.
Bridging method of the present invention also comprises following process: make it be cooled to the cooling procedure that glass transition point is following, then the pressurization of installation component is removed after the described resin heat hardening.
Adopt bridging method of the present invention, after being crimped on the installation component heating on the substrate, it is cooled to below the glass transition point corresponding with this resin.Therefore, resin becomes basically the state of sclerosis fully, and removes low temperature after and pressurize, so can prevent the distortion deflection that causes because of the difference of the thermal expansion of substrate and chip etc., can obtain the good connection of all electrodes.
In heating process, preferably simultaneously supporting member is heated.Adopt this method, by the heating supporting member, will be from the heat transferred substrate of supporting member.Like this, the both sides of chip and substrate are heated, make two members be in roughly the same temperature, so can relax the deflection that the difference because of the thermal coefficient of expansion of two members causes.Particularly when substrate be the occasion of flat display floater, because of infrared ray sees through substrate, thus preferably adopt the temperature rising that makes supporting member, from supporting member directly with the structure of the flat display floater of heat transferred.
Again, elastomeric material preferably has the member of thermal insulation.Adopt this method, the elastomeric material that has thermal insulation because of use is covered installation component, spills by elastomeric material from being engaged face so can prevent heat.Can carry out the heat hardening of resin expeditiously thus.
Again, to achieve these goals, the present invention has also adopted following structure.
Lap device of the present invention carries out the installation of installation component with resin clip between installation component and substrate, on substrate, described device comprises following key element:
Mounting keeps the maintenance platform of described substrate;
To described by the substrate of mounting on the single pressue device that pressurizes simultaneously of a plurality of installation components of alignment arrangements;
Be sandwiched in the elastomeric material between installation component and the pressue device when pressurizeing described a plurality of installation component;
The supporting member that the part of the described installation component of installation of described substrate is supported from the below; And
Make the heater of resin heat hardening from the below of described substrate irradiation infrared ray,
The vertical section of described heater is an ellipticity, dispose installation component is relative with light source at this long axis of ellipse end, the elliptic space that the inwall of heater is formed with the metal film lining forms in the whole orientation of installation component, and this heater constitutes to each installation position irradiation infrared ray.
Adopt lap device of the present invention, use single pressue device, pressurize simultaneously from a plurality of installation components that the top remains on the substrate that keeps platform mounting, and use supporting member to support by substrate from the below by elastomeric material.At this moment, from substrate below irradiation infrared ray, make the resin heat hardening.Thus, can be expeditiously be installed on the substrate a plurality of installation components are disposable.
And, adopt this structure, will have the inwall lining of heater of the inner space of ellipsoid shaped by using metal film, by the metal film of inside infrared reflection, the laggard line output of optically focused with radiation.Like this, infrared ray only can be shone the position of the installation component on the substrate.And, infrared ray optically focused can be shone to the regulation position, can heat resin expeditiously.
Again, supporting member is glass support platform preferably, being formed with the form of the efferent that partly shines by this glass support platform, the chip only substrate installed from the infrared ray of heater output, to this glass support platform except the part on the surface of substrate-side, use metal film that other parts are covered.
Adopt this structure, the infrared ray of exporting from heater passes through this glass support platform, only the position that installation component is installed on the substrate is shone, and therefore, just to the heating of substrate locality, can avoid the temperature rising of substrate integral body.The result is the substrate applicable to the thermal stress difference of flat display floater and so on.
Again, preferably use the other parts lining except the part on the surface of substrate-side of metal film with glass support platform, and, make glass support platform self heating by infrared radiation.
Adopt this structure, by with glass support platform, make metal film and hot line baffle glass and usefulness, the temperature of glass support platform itself is risen, use as heater.Like this, heat the substrate portion that chip is installed can be directly passed to from the leading section of the glass support platform that supporting substrate, by the heating of infrared radiation mode, the heat hardening of resin can be carried out more expeditiously simultaneously.And, owing to glass support platform can be used as heater, so do not need to set again in addition heater.
Again, the metal film of lining glass support platform any in aluminium, gold, copper, the chromium preferably.
To achieve these goals, the present invention has also adopted following structure.
Lap device of the present invention also comprises following key element: the heater that described glass support platform is heated.
Adopt this structure, glass support platform is heated, the heat from glass support platform can be directly passed to substrate by heater.Like this, using infrared ray to see through but during glass substrate that temperature is not easy to rise, can reduce the temperature difference of substrate and installation component.
To achieve these goals, the present invention has also adopted following structure.
Lap device of the present invention also comprises following key element: the resin after the heat hardening is cooled to cooling device below the glass transition point.
Adopt this structure, on substrate, make after the installation component heat hardening, by by the blowing etc. cooling device cool off, can be cooled to below the glass transition point corresponding with this resin.Like this, resin becomes basically the state of sclerosis fully, and, become the releasing of will pressurizeing after the low temperature, so can prevent the distortion deflection that causes because of the difference of the thermal expansion of substrate and chip etc., can obtain the good connection of all electrodes.
To achieve these goals, the present invention has also adopted following structure.
Lap device of the present invention also comprises following key element: the valve of blowing to the rear side of substrate.
Adopt this structure, set valve by the rear side at substrate, when being crimped on the installation component heating on the substrate after making the resin heat hardening, only mounting portion irradiation infrared ray is heated, the zone of other substrate back is cooled by air.Like this, have the occasion of light polarizing film, can carry out cooling protection the light polarizing film of poor heat resistance such as the rear side when substrate is glass substrate.
For the present invention is described, illustrates and think some kinds of more suitable forms now, but wish to be understood as not to be the sort of structure shown in the diagram and the qualification of method are made in invention.
Description of drawings
Fig. 1 is the stereogram of the traditional main compression bonding apparatus general configuration of expression.
Fig. 2 is the stereogram of the main compression bonding apparatus general configuration among expression the 1st and the 2nd embodiment.
Fig. 3 is the cutaway view of wanting bilge construction of the head periphery among expression the 1st embodiment.
Fig. 4 is the cutaway view of wanting bilge construction of expression embodiment device.
Fig. 5 heats chip the cutaway view of crimped status on substrate for expression.
Fig. 6 is the summary construction diagram of wanting bilge construction of the head periphery among expression the 2nd embodiment.
Fig. 7 is the flow chart of the real compression bonding method of expression the 2nd embodiment device.
Embodiment
One embodiment of the invention are described with reference to the accompanying drawings.
[the 1st embodiment]
In the present embodiment, to the resin that uses ACP (Anisotropic Conductive Paste), ACF, NCP, NCF (Non-Conductive Film) etc., with installation component, be that the example that chip is installed in the occasion on the substrate describes.
As " installation component " among the present invention, usually can consider to adopt such as IC chip, semiconductor chip, optical element, surface mounted component, chip, wafer, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit) etc. with kind and big or smallly have nothing to do, be meant and all forms of the engage side of substrate, on flat display floater, carry out the COG (Chip On Glass) of chip overlapping mode and the OLB (Outer Lead Bonding) of TCP and FPC overlapping mode.
The implication of " substrate " among the present invention is meant such as resin substrate, glass substrate, film substrate etc., gets final product so long as see through the substrate of infrared light or absorption back heating easily easily.
As " infrared ray " from heater output among the present invention, such as the infrared ray that is meant the wavelength that contains far infrared part and near-infrared part.As near infrared ray, such as preferably in the scope of wavelength 800～1200nm.
At first, specify the employed device of present embodiment with reference to accompanying drawing.
Fig. 2 is the lap device of expression among the present invention, the i.e. stereogram of the general configuration of main compression bonding apparatus, and Fig. 3 is the end view of wanting bilge construction of expression embodiment device, and Fig. 4 is the end view of the schematic configuration of representing embodiment device.
As shown in Figure 2, the main compression bonding apparatus 1 among the present invention has: the substrate 2 that illustrated interim crimping unit conveyance is never come carries out the movable table 3 that level keeps; The pressue device 5 that chip 4 is pressurizeed from the top; Be clipped in the elastomeric material 6 between chip 4 and the pressue device 5; Chip 4 is clamped the glass support platform 7 that supports from the below of substrate 2 with pressue device 5; Resin is carried out the infrared radiation portion 8 of heat hardening; And the cooling device 9 that substrate 2 is cooled off.
As shown in Figure 2, movable table 3 has the substrate holder 10 that substrate 2 is adsorbed maintenance, and this substrate holder 10 is removable respectively to be formed in 2 of levels (X, Y) direction, (Z) direction and on (θ) direction around the Z axle up and down freely.
By the elastomeric material that use has thermal insulation, can prevent to spill from the heat of non-overlapping lateral elasticity material transfer of chip 2.Can carry out heat hardening to resin more expeditiously thus.
The thickness of elastomeric material 6 can suitably change according to the member that uses etc.
As shown in Figures 2 and 3, glass support platform 7 is the cones with par, and its front end can support the back portion of the substrate 2 that chip 4 is installed, and extends with pressue device 5 the same arrangements of chips directions to substrate 2.Evaporation has aluminium on the rake 15 on the surface (top among Fig. 3) of the substrate-side of glass support platform 7.Has only the par opening.That is, the infrared ray of exporting from infrared radiation portion 8 passes through glass support platform 7, can only the resin on the substrate be shone from peristome 16 outputs.
By AM aluminum metallization on the rake 15 of glass support platform 7, infrared ray can not spill from this position, so infrared ray can not shine the position on the substrate that chip 4 is not installed.Again, with hot line baffle glass, glass support platform 7 is heated, can utilize this heat that substrate 2 is heated by also.
Like this, only need substrate 2 is carried out the locality heating, can avoid the temperature of substrate integral body to rise.Again, glass support platform 7 itself can only make infrared ray pass through, and can not accumulate the excessive heat of heater and so on, and the result is that substrate 2 can not be subjected to because of glass support platform 7 thermal stress that take place own.
As Fig. 2 and shown in Figure 4, infrared radiation portion 8 its outward appearances are block, are provided to the below of glass support platform 7.Its inside has the space 17 of ellipsoid shaped, and the bottom has the heater 18 of infra-red-emitting (such as near infrared ray and far infrared).Again, its inwall is by metal film 19, such as linings such as gold.In addition, infrared radiation portion 8 is suitable with heater of the present invention.
That is, reflect from the infrared ray of heater 18 radiation metal film 19, to the peristome of outlet side, promptly to the laggard line output of 7 optically focused of the glass support platform shown in the arrow of Fig. 4 by inwall.
As shown in Figure 3, cooling device 9 be provided to glass support platform 7 about, air supply between the rear side of the rake 15 of glass support platform 7 and substrate 2.That is, to shining ultrared substrate back part and cooling off with the surface of the rake 15 of the glass support platform 7 of substrate 2 adjacency.
As this cooling etc. time and the establishing method of condition, by prior test, carry out condition enactment while measure each temperature of chip 4, substrate 2, resin.Like this, when actual installation, temperature etc. is controlled, so do not need temperature etc. is surveyed according to condition of obtaining in advance and time.
When cooling off at a high speed, preferably directly chip 4 and resin and substrate top are dried from substrate top.
With reference to the accompanying drawings a series of actions of using the foregoing description device, with ACF chip is installed on substrate is described.In the present embodiment, be example, the structure of carrying out conveyance in the interim crimping process of preceding operation under the state that chip is crimped in advance temporarily substrate is made an explanation with the occasion that chip fully really is crimped on substrate.
In the interim crimping process of previous stage, accompany the substrate 2 of resin ground with chip 4 interim crimping, by not shown transport mechanism conveyance to main compression bonding apparatus 1.This substrate 2 carries out transfer and is adsorbed maintenance on the substrate holder 10 of movable table 3.Substrate holder 10 by not shown driving mechanism forwards (the Y direction among Fig. 2), promptly between head 12 and glass support platform 7, move, by head 12 and glass support platform 7 form that chip 4 sandwiches is carried out the contraposition of substrate 2 from above-below direction to form.
The contraposition of substrate 2 in case be through with then descends head 12 by not shown driving mechanism, simultaneously a plurality of chips 4 is clamped by this head 12 and the glass support platform 7 that is positioned at substrate 2 downsides.At this moment, by head 12 elastomeric material 6 that is clipped between chip 4 and the head 12 is descended simultaneously, a plurality of chips 4 that arrangement is installed on the substrate cover simultaneously.That is, during pressurization, elastomeric material 6 absorbs the thickness deviation of chip 4 as shown in Figure 5, and each chip 4 is applied roughly pressure uniformly.
Like this, at the briquetting 21 of chip 4 sides and the conducting particles 23 between the electrode of substrate 22 also strain equably, fully to guarantee two interelectrode contact resistances.
In case by head 12 and glass support platform 7 chip 4 is clamped, then from infrared radiation portion 8 output infrared rays.As shown in Figure 4, infrared ray is exported to glass support platform 7 behind the peristome optically focused of outlet side by the inwall reflection of infrared radiation portion 8.
The infrared ray that is output is exported with the state from peristome 16 optically focused of substrate-side by glass support platform 7.The infrared light that is output (infrared ray) is not only absorbed by substrate 2 (glass substrate), and is also absorbed by resin and chip 4 through substrate 2, expeditiously resin is carried out heat hardening.Particularly absorbed itself temperature of ultrared substrate 2 and chip 4 and risen, with this heat transferred resin.Like this, infrared ray can only shine the position that chip 4 is installed on the substrate, can realize the purpose that only mounting portion is heated.
After through stipulated time irradiation infrared ray, finish ultrared irradiation, from cooling device 9 air supplies, from rear side and/or above substrate 2 is cooled off.
Near the releasing of will pressurizeing when following being in the Tg temperature makes head 12 be back to the position of readiness of top, and substrate holder 10 is moved to substrate transfer position.The substrate 2 that moves to delivery position, is housed in the substrate collection box to the conveyance of substrate accepting unit by not shown substrate transferring mechanism.
More than, the overlap joint of 4 pairs of 1 substrates 2 of end chip.
As mentioned above, by being clipped between a plurality of chips 4 and the head 12, elastomeric material 6 adds thermo-compressed, by elastomeric material 6 thickness deviation of each chip 4 is absorbed, a plurality of chip 4 disposable heating equably can be crimped on the substrate 2, can shorten and add the thermo-compressed time, promptly improve operating efficiency.
Again, be equipped with the ultrared peristome 16 of output on the surface of substrate-side, utilization can make infrared ray shine to the position that chip 4 is installed of substrate 2 by the glass support platform 7 of metal film lining other parts and the infrared radiation portion 8 that exports by the whole inwall of metal film 19 lining inner spaces 17, after will the infrared ray optically focused by internal reflection thus.Like this, the temperature locality of substrate 2 is risen, can avoid the temperature of substrate integral body to rise.
Again, can make infrared ray see through substrate, impel hardening of resin more.
As mentioned above, owing to can shorten heating time of substrate 2 and avoid the temperature of substrate integral body to rise, therefore, the substrate for flat display floater of thermal stress difference and so on can effectively utilize in the present embodiment device.
And, after making the resin heat hardening, after cooling arrives glass transition point,, make resin become roughly the state of sclerosis fully by removing by the pressurization of head 12.That is, because of the releasing of will pressurizeing at low temperatures, so can eliminate the distortion deflection that the difference because of substrate 2 and the thermal expansion of chip 4 causes.The result can use the substrate that chip 4 is installed reliably.
[the 2nd embodiment]
As the apparatus structure of present embodiment, have only pressue device different with the 1st above-mentioned embodiment device on every side, mark prosign on identical position describes for different parts.
Fig. 6 is the front view of wanting bilge construction of the lap device among expression the present invention.
As shown in Figure 6, main compression bonding apparatus has: the substrate 2 that illustrated interim crimping unit conveyance is never come carries out the movable table 3 that level keeps; The pressue device 5 that chip 4 is pressurizeed from the top; Be clipped in the elastomeric material 6 between chip 4 and the pressue device 5; Chip 4 is sandwiched the glass support platform 7 that supports on shape ground with pressue device 5 from the below of substrate 2; The heater 50 that glass support platform 7 is heated; Infrared radiation portion 8; Respectively from the above and below to substrate 2 air fed valves 51; And constitute the control part 53 that carries out bulking property control to these each.
As shown in Figure 2, movable table 3 has the substrate holder 10 that substrate 2 is adsorbed maintenance, and this substrate holder 10 is removable respectively to be formed in 2 of levels (X, Y) direction, (Z) direction and on (θ) direction around the Z axle up and down freely.
The stream that the head 12 of pressue device 5 is equipped with heater (such as ceramic heater) not shownly and makes coolant circulation usefulness.That is, when making the resin heat hardening, head 12 is heated, elastomeric material 6 is heated by heater.By elastomeric material 6 being heated, can avoid chip 4 to absorb the heats that infrared ray had and be caused damage with the elastomeric material 6 of non-overlapping side contacts by heat conduction by heater.That is, has effect during for the object of no thermal insulation or thermal insulation difference for elastomeric material 6.
In the cooling procedure after the heating of adopting real crimping, stream is used for the cooling of head 12.Specifically, be equipped on the top of heater, in stream, make coolant, circulate such as air and cooling water.
Be provided to the valve 51 of substrate below, be when heating glass brace table 7, the glass support platform 7 and the heat conduction of substrate 2 contact portion near zones suppressed the member of usefulness, to the substrate back air supply.
Below, the limit is regulated the temperature limit method that chip is fixed on the substrate is made an explanation in the cooling procedure when adopting resin (ACF) part of above-mentioned main compression bonding apparatus on substrate that chip is carried out real crimping, after the heat hardening of resin.About concrete method, describe with reference to the flow process of Fig. 7.
＜step S1〉the substrate contraposition
＜step S2〉heating process
The temperature of resin is risen to such as more than 190 ℃, regulate by the degree of illumination of the infrared ray IR of control part 53 subtend mounting portions (such as, output degree or open and close switching mode) and irradiation time.As for 200～220 ℃ of scopes preferably of the design temperature under the ACF situation.When design temperature is lower than 190 ℃, impairs hardening of resin and promote that if surpass more than 220 ℃ even 240 ℃, then the thermal endurance aspect of resin exists problem.
At this moment,, to the substrate back air supply zone beyond the chip mounting portion is cooled off from valve 51.That is, be applicable to the glass substrate of light polarizing film with poor heat resistance.
＜step S3〉the cooling beginning
In case heating process finishes, and then begins to cool down, so that resin temperature reaches the Tg temperature.Specifically, cool off in the following order.
At first, according to heating OFF signal that not shown valve is open from control part 53, beginning air supply in head.Along with the supply of this air is cooled off the heater in the head.At this moment, utilize cooling and head 12 under the atmosphere opening state to cool off caused heat transfer fast, can make the resin cooling effectively.
In case arrive near the Tg temperature corresponding with each resin, such as under the ACF situation when arriving Tg temperature+20 ℃, then stop the cooling of head 12,53 couples of valve V of control part carry out open operation,, simultaneously the temperature of heater 50 is regulated to chip 4 air supplies from the valve 51 of substrate below.
As the establishing method of these thermoregulator times and condition,, carry out condition enactment while measure each temperature of chip 4, substrate 2 and resin by pretest.
＜step S4〉remove and pressurize
In a single day chilling temperature arrives the Tg temperature, and the pressurization of 12 pairs of chips of head is removed, and makes head 12 turn back to the top position of readiness.
＜step S5〉the taking-up substrate
In case the pressurization of head 12 is removed, then substrate holder 10 is moved to substrate transfer position.The substrate 2 that moves to delivery position, is housed in the substrate collection box to the substrate accepting unit by not shown substrate transferring mechanism conveyance.
More than, finish real crimping to the chip 4 of 1 substrate 2.
The present invention is not limited to the foregoing description, can carry out following distortion and implement.
(1) the foregoing description is to use the whole internal face lining of metal film with the inner space of infrared radiation portion, but also the available metal film is covered a part.Such as, also the available metal film only is covered the latter half of Fig. 4.
Again, also infrared radiation portion can be made alienable structure up and down, can improve maintainability thus.
(2) the foregoing description is that evaporation has aluminium on the rake 15 of glass support platform 7, but also can change into such as gold evaporation, copper, chromium etc. without aluminium.
By and use the heat absorption glass sheet, rise along with ultrared irradiation makes the temperature of metal part, glass support platform 7 temperature own also rise, and glass support platform 7 can be used as heater.That is, the temperature of glass support platform 7 rises, from the leading section of substrate 2 butts directly with heat transferred substrate 2.
Thus, when making hardening of resin, by ultrared irradiation chip 4 and resin are heated, substrate 2 is heating simultaneously also, makes chip 4 and substrate 2 rise to roughly the same temperature.Under this state, resin is heated, chip 4 is installed on the substrate 2, then chip 4 and substrate 2 are cooled off simultaneously, arrive near the Tg temperature of hardening fully basically, can relax the deflection that the difference because of chip 4 and the thermal coefficient of expansion of substrate 2 causes thus, chip 4 can be fixed on the substrate 2 reliably.
Particularly when adopting the glass substrate of flat display floater and so on, because of the thermal coefficient of expansion of chip 4 and glass substrate roughly equates with 3ppm, so, can further relax the generation of deflection by to chip 4 with glass substrate heats simultaneously and cool off simultaneously.
Again, the angle from the infra red ray transmitting glass substrate makes heat be not easy to gather preferably is directly passed to glass substrate with heat from glass support platform 7.
Again, the occasion of chip 4 is installed on flat display floater, thermal stress had better not be put on whole base plate.Like this, when glass support platform 7 is used as heater, preferably, do not make radiation heat arrive substrate 2, but the heat locality is transmitted from front end with the glass support platform 7 of substrate butt from metal film to rake 15 blowing of glass support platform 7.
The present invention can implement other concrete form under the situation that does not break away from its thought or essence, therefore, as the described scope of invention, singly be not above explanation, should be with reference to the additional claim in back.
Claims (13)
1. a bridging method carries out the installation of installation component with resin clip between installation component and substrate, on substrate, it is characterized in that described method comprises following process:
Under a plurality of installation components and the state between the pressue device that elastomeric material are clipped in alignment arrangements on the substrate, sandwich the pressure process that shape ground pressurizes simultaneously to a plurality of installation components by pressue device with to the supporting member that substrate supports; And
The heating process of utilizing heater to carry out heat hardening to the described resin irradiation infrared ray that is in described pressurized state, wherein, the vertical section of described heater is an ellipticity, dispose installation component is relative with light source at this long axis of ellipse end, the elliptic space that the inwall of heater is formed with the metal film lining forms in the whole orientation of installation component, and this heater constitutes to each installation position irradiation infrared ray.
2. bridging method as claimed in claim 1 is characterized in that, described resin is the resin of sneaking into conducting particles.
3. bridging method as claimed in claim 1 is characterized in that, described substrate is flat display floater.
4. bridging method as claimed in claim 1 is characterized in that, also comprises following process: after the described resin heat hardening, it is cooled to below the glass transition point, then the cooling procedure that the pressurization of installation component is removed.
5. bridging method as claimed in claim 1 is characterized in that, in described heating process, simultaneously supporting member is heated.
6. bridging method as claimed in claim 1 is characterized in that, described elastomeric material is the member with thermal insulation.
7. a lap device carries out the installation of installation component with resin clip between installation component and substrate, on substrate, it is characterized in that described device comprises following key element:
Mounting keeps the maintenance platform of described substrate;
To described by the substrate of mounting on the single pressue device that pressurizes simultaneously of a plurality of installation components of alignment arrangements;
Be sandwiched in the elastomeric material between installation component and the pressue device when pressurizeing described a plurality of installation component;
The supporting member that the part of the described installation component of installation of described substrate is supported from the below; And
Make the heater of resin heat hardening from the below of described substrate irradiation infrared ray,
The vertical section of described heater is an ellipticity, dispose installation component is relative with light source at this long axis of ellipse end, the elliptic space that the inwall of heater is formed with the metal film lining forms in the whole orientation of installation component, and this heater constitutes to each installation position irradiation infrared ray.
8. lap device as claimed in claim 7, it is characterized in that, described supporting member is a glass support platform, being formed with the form of the efferent that partly shines by this glass support platform, the chip only substrate installed from the infrared ray of heater output, to this glass support platform except the part on the surface of substrate-side, use metal film that other parts are covered.
9. lap device as claimed in claim 8 is characterized in that, uses the other parts lining except the part on the surface of substrate-side of metal film with described glass support platform, and, make glass support platform self heating by infrared radiation.
10. lap device as claimed in claim 9 is characterized in that, the metal film of described lining glass support platform is any in aluminium, gold, copper, the chromium.
11. lap device as claimed in claim 8 is characterized in that, described device also comprises following key element: the heater that described glass support platform is heated.
12. lap device as claimed in claim 7 is characterized in that, described device also comprises following key element: the resin after the heat hardening is cooled to cooling device below the glass transition point.
13. lap device as claimed in claim 7 is characterized in that, described device also comprises following key element: the valve of blowing to the rear side of substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003378048 | 2003-11-07 | ||
| JP2003-378048 | 2003-11-07 | ||
| JP2003378048A JP4001341B2 (en) | 2003-11-07 | 2003-11-07 | Bonding method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1614760A CN1614760A (en) | 2005-05-11 |
| CN100426479C true CN100426479C (en) | 2008-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100858875A Expired - Fee Related CN100426479C (en) | 2003-11-07 | 2004-11-05 | Bonding method and apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4001341B2 (en) |
| KR (1) | KR101189290B1 (en) |
| CN (1) | CN100426479C (en) |
| TW (1) | TWI373078B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4687273B2 (en) * | 2005-06-23 | 2011-05-25 | 住友電気工業株式会社 | Electronic component mounting method |
| JP4872291B2 (en) * | 2005-09-27 | 2012-02-08 | 住友電気工業株式会社 | Electrode connection method, electrode connection device, and method for manufacturing wiring board assembly |
| KR100691810B1 (en) | 2006-02-17 | 2007-03-12 | 주식회사 나래나노텍 | Improved bonding apparatus of pattern electrodes |
| KR100734422B1 (en) * | 2006-03-08 | 2007-07-03 | 삼성전자주식회사 | Bdnding apparatus for lcd |
| EP2284876A4 (en) * | 2008-06-05 | 2012-01-04 | Sumitomo Bakelite Co | Manufacturing method for semiconductor device and semiconductor device |
| CN102204419A (en) * | 2008-10-31 | 2011-09-28 | 东丽株式会社 | Method and apparatus for bonding electronic component and flexible film substrate |
| KR101119541B1 (en) * | 2009-11-30 | 2012-02-22 | (주)멜파스 | Apparatus of compressing for acf bonding and method of the same |
| JP2011199184A (en) * | 2010-03-23 | 2011-10-06 | Fujifilm Corp | Substrate mounting device and substrate mounting method |
| WO2014142330A1 (en) * | 2013-03-15 | 2014-09-18 | 株式会社ニコン | Biochip fixing method, biochip fixing device, and screening method for biomolecule array |
| TWI692044B (en) * | 2017-05-29 | 2020-04-21 | 日商新川股份有限公司 | Packaging device and method for manufacturing semiconductor device |
| CN108475484B (en) * | 2017-06-22 | 2022-02-15 | 深圳市柔宇科技股份有限公司 | Bearing device and laminating equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6444918A (en) * | 1987-08-13 | 1989-02-17 | Konishiroku Photo Ind | Production of liquid crystal display device |
| JPH07130795A (en) * | 1993-11-04 | 1995-05-19 | Matsushita Electric Ind Co Ltd | Semiconductor element connecting method and apparatus therefor |
| JPH09297318A (en) * | 1996-03-06 | 1997-11-18 | Seiko Epson Corp | Liquid crystal device, production of liquid crystal device and electronic apparatus |
| CN1295265A (en) * | 1999-11-04 | 2001-05-16 | 精工爱普生株式会社 | Component installation method and manufacture of electro-optical device thereof |
| JP2003303853A (en) * | 2002-02-05 | 2003-10-24 | Toray Eng Co Ltd | Chip mounting method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003303851A (en) * | 2002-02-05 | 2003-10-24 | Toray Eng Co Ltd | Chip mounting method and apparatus using the same |
-
2003
- 2003-11-07 JP JP2003378048A patent/JP4001341B2/en not_active Expired - Fee Related
-
2004
- 2004-11-01 TW TW093133160A patent/TWI373078B/en not_active IP Right Cessation
- 2004-11-04 KR KR1020040089197A patent/KR101189290B1/en not_active IP Right Cessation
- 2004-11-05 CN CNB2004100858875A patent/CN100426479C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6444918A (en) * | 1987-08-13 | 1989-02-17 | Konishiroku Photo Ind | Production of liquid crystal display device |
| JPH07130795A (en) * | 1993-11-04 | 1995-05-19 | Matsushita Electric Ind Co Ltd | Semiconductor element connecting method and apparatus therefor |
| JPH09297318A (en) * | 1996-03-06 | 1997-11-18 | Seiko Epson Corp | Liquid crystal device, production of liquid crystal device and electronic apparatus |
| CN1295265A (en) * | 1999-11-04 | 2001-05-16 | 精工爱普生株式会社 | Component installation method and manufacture of electro-optical device thereof |
| JP2003303853A (en) * | 2002-02-05 | 2003-10-24 | Toray Eng Co Ltd | Chip mounting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4001341B2 (en) | 2007-10-31 |
| TWI373078B (en) | 2012-09-21 |
| TW200522238A (en) | 2005-07-01 |
| JP2005142397A (en) | 2005-06-02 |
| CN1614760A (en) | 2005-05-11 |
| KR20050044257A (en) | 2005-05-12 |
| KR101189290B1 (en) | 2012-10-15 |
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Address after: Kanagawa Patentee after: Japanese Innolux Limited by Share Ltd of Japan Patentee after: Tourara Engineering Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: International Display Technology Co., Ltd. Patentee before: Tourara Engineering Co., Ltd. |
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Granted publication date: 20081015 Termination date: 20161105 |