NL9100094A - Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL9100094A NL9100094A NL9100094A NL9100094A NL9100094A NL 9100094 A NL9100094 A NL 9100094A NL 9100094 A NL9100094 A NL 9100094A NL 9100094 A NL9100094 A NL 9100094A NL 9100094 A NL9100094 A NL 9100094A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- insulating layer
- semiconductor device
- etching stop
- conductive regions
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 108090000623 proteins and genes Proteins 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/1485—Frame transfer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL9100094A NL9100094A (nl) | 1991-01-21 | 1991-01-21 | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
DE69226887T DE69226887T2 (de) | 1991-01-21 | 1992-01-14 | Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung |
EP92200079A EP0496443B1 (de) | 1991-01-21 | 1992-01-14 | Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung |
KR1019920000667A KR100273070B1 (ko) | 1991-01-21 | 1992-01-18 | 반도체 소자 및 그 제조방법 |
JP4008554A JP3048459B2 (ja) | 1991-01-21 | 1992-01-21 | 半導体装置およびその製造方法 |
US08/225,403 US5396092A (en) | 1991-01-21 | 1994-04-08 | Wiring arrangement for a semiconductor device using insulating and etch stop layers |
US08/346,947 US5536678A (en) | 1991-01-21 | 1994-11-29 | Method of manufacturing a wiring arrangement for a semiconductor device using insulating and etch stop layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL9100094A NL9100094A (nl) | 1991-01-21 | 1991-01-21 | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
NL9100094 | 1991-01-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL9100094A true NL9100094A (nl) | 1992-08-17 |
Family
ID=19858750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL9100094A NL9100094A (nl) | 1991-01-21 | 1991-01-21 | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
Country Status (6)
Country | Link |
---|---|
US (2) | US5396092A (de) |
EP (1) | EP0496443B1 (de) |
JP (1) | JP3048459B2 (de) |
KR (1) | KR100273070B1 (de) |
DE (1) | DE69226887T2 (de) |
NL (1) | NL9100094A (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9100094A (nl) * | 1991-01-21 | 1992-08-17 | Koninkl Philips Electronics Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
EP0625800B1 (de) * | 1993-05-21 | 2001-09-26 | Koninklijke Philips Electronics N.V. | Ladungsgekoppelte Bildaufnahmeanordnung |
DE69428394T2 (de) * | 1993-05-21 | 2002-07-04 | Koninkl Philips Electronics Nv | Ladungsgekoppelte Bildaufnahmeanordnung |
US5382545A (en) * | 1993-11-29 | 1995-01-17 | United Microelectronics Corporation | Interconnection process with self-aligned via plug |
US5635421A (en) * | 1995-06-15 | 1997-06-03 | Taiwan Semiconductor Manufacturing Company | Method of making a precision capacitor array |
US5719075A (en) * | 1995-07-31 | 1998-02-17 | Eastman Kodak Company | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal |
JPH09153545A (ja) * | 1995-09-29 | 1997-06-10 | Toshiba Corp | 半導体装置及びその製造方法 |
US6008121A (en) * | 1996-03-19 | 1999-12-28 | Siemens Aktiengesellschaft | Etching high aspect contact holes in solid state devices |
JPH09270461A (ja) * | 1996-03-29 | 1997-10-14 | Mitsubishi Electric Corp | 半導体装置 |
US5652173A (en) * | 1996-05-09 | 1997-07-29 | Philips Electronics North America Corporation | Monolithic microwave circuit with thick conductors |
EP0925604B1 (de) * | 1997-05-29 | 2008-07-09 | Nxp B.V. | Methode zur herstellung einer elektronischen schaltung, wobei eine leitetende schicht auf einer isolierenden schicht hergestellt wird und daraus ein leitungsmuster gemacht wird |
US5989784A (en) * | 1998-04-06 | 1999-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch recipe for embedded DRAM passivation with etch stopping layer scheme |
EP1374301A2 (de) * | 2001-03-21 | 2004-01-02 | Koninklijke Philips Electronics N.V. | Herstellung eines halbleiterbauelementes mit durch wolframstopfen verbundenen leiterebenen |
DE10320166B4 (de) * | 2002-05-16 | 2007-06-06 | Dalsa Corp., Waterloo | Pixelentwurf für CCD-Bildsensoren |
US6562711B1 (en) * | 2002-06-28 | 2003-05-13 | Intel Corporation | Method of reducing capacitance of interconnect |
US8166438B2 (en) * | 2009-01-28 | 2012-04-24 | Oracle America, Inc. | Low RC local clock distribution |
US8245781B2 (en) * | 2009-12-11 | 2012-08-21 | Schlumberger Technology Corporation | Formation fluid sampling |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163239A (en) * | 1971-12-30 | 1979-07-31 | Texas Instruments Incorporated | Second level phase lines for CCD line imager |
US4291328A (en) * | 1979-06-15 | 1981-09-22 | Texas Instruments Incorporated | Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon |
US4488166A (en) * | 1980-12-09 | 1984-12-11 | Fairchild Camera & Instrument Corp. | Multilayer metal silicide interconnections for integrated circuits |
JPS5966165A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 電極配線およびその製造方法 |
JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
NL8501339A (nl) * | 1985-05-10 | 1986-12-01 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPS61280638A (ja) * | 1985-06-06 | 1986-12-11 | Toshiba Corp | 半導体装置の製造方法 |
US4808552A (en) * | 1985-09-11 | 1989-02-28 | Texas Instruments Incorporated | Process for making vertically-oriented interconnections for VLSI devices |
US4789648A (en) * | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
ES2046209T3 (es) * | 1986-12-17 | 1995-04-01 | Advanced Micro Devices Inc | Estructura de contacto a tope de area reducida. |
JPH02134992A (ja) * | 1988-11-15 | 1990-05-23 | Matsushita Electron Corp | 固体撮像素子 |
NL9100094A (nl) * | 1991-01-21 | 1992-08-17 | Koninkl Philips Electronics Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
-
1991
- 1991-01-21 NL NL9100094A patent/NL9100094A/nl not_active Application Discontinuation
-
1992
- 1992-01-14 DE DE69226887T patent/DE69226887T2/de not_active Expired - Fee Related
- 1992-01-14 EP EP92200079A patent/EP0496443B1/de not_active Expired - Lifetime
- 1992-01-18 KR KR1019920000667A patent/KR100273070B1/ko not_active IP Right Cessation
- 1992-01-21 JP JP4008554A patent/JP3048459B2/ja not_active Expired - Fee Related
-
1994
- 1994-04-08 US US08/225,403 patent/US5396092A/en not_active Expired - Fee Related
- 1994-11-29 US US08/346,947 patent/US5536678A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR920015623A (ko) | 1992-08-27 |
EP0496443A1 (de) | 1992-07-29 |
JPH04302472A (ja) | 1992-10-26 |
DE69226887T2 (de) | 1999-04-08 |
EP0496443B1 (de) | 1998-09-09 |
US5536678A (en) | 1996-07-16 |
KR100273070B1 (ko) | 2000-12-01 |
DE69226887D1 (de) | 1998-10-15 |
US5396092A (en) | 1995-03-07 |
JP3048459B2 (ja) | 2000-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL9100094A (nl) | Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. | |
US7858433B2 (en) | Photoelectric converting film stack type solid-state image pickup device, and method of producing the same | |
JP2001308303A (ja) | 活性領域ダイオード及びソース/ドレイン拡散領域のリーク電流を低減するための方法及び構造 | |
US6525356B1 (en) | Solid imaging device | |
JPH0774337A (ja) | 固体撮像装置 | |
US4695860A (en) | Gate structure for an integrated circuit comprising elements of the gate-insulator-semiconductor type and a method of fabrication of an integrated circuit using said structure | |
EP0137554B1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung | |
EP2842164B1 (de) | Halbleiterbauelement und verfahren zu seiner herstellung | |
US6369413B1 (en) | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making | |
US6680222B2 (en) | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making | |
JP2912533B2 (ja) | 固体撮像装置 | |
EP1181722B1 (de) | Rauscharme datenleitung mit hoher ausbeute für bildsensoren | |
JP2963572B2 (ja) | 電荷結合素子 | |
JPH0715668A (ja) | 電荷結合撮像装置 | |
JP3018669B2 (ja) | 半導体センサ | |
KR100263467B1 (ko) | 고체촬상소자 및 그의 제조방법 | |
JP2877183B2 (ja) | 電荷転送装置 | |
US5126811A (en) | Charge transfer device with electrode structure of high transfer efficiency | |
JPH0810760B2 (ja) | 固体撮像装置 | |
JP3394878B2 (ja) | 固体撮像装置の製造方法 | |
US6242768B1 (en) | Charge coupled device and a driving method thereof | |
JP3100624B2 (ja) | 各ピクセルに対して簡易電極構造を備えた非インターレースインターライン転送型ccdイメージセンサ | |
JP3296352B2 (ja) | 光電変換装置、固体撮像装置およびその製造方法 | |
JP2508507B2 (ja) | 固体撮像装置 | |
JP2539936B2 (ja) | 電荷転送装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |