KR970026601A - 질화물 반도체 장치 - Google Patents

질화물 반도체 장치 Download PDF

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KR970026601A
KR970026601A KR1019960052331A KR19960052331A KR970026601A KR 970026601 A KR970026601 A KR 970026601A KR 1019960052331 A KR1019960052331 A KR 1019960052331A KR 19960052331 A KR19960052331 A KR 19960052331A KR 970026601 A KR970026601 A KR 970026601A
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nitride semiconductor
layer
semiconductor device
active layer
active
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KR1019960052331A
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KR100267839B1 (ko
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슈지 나까무라
신이찌 나가하마
나루히토 이와사
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오가와 에이지
니치아 가가꾸 고오교오 가부시기가이샤
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Priority claimed from JP30528195A external-priority patent/JP2900990B2/ja
Priority claimed from JP30527995A external-priority patent/JP3235440B2/ja
Priority claimed from JP33205695A external-priority patent/JP2891348B2/ja
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Abstract

질화물 반도체 장치는 질화물 반도체 층구조를 가진다. 상기 구조는 인듐-함유 질화물 반도체를 포함하는 양자우물구조의 활성층을 포함한다. 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1질화물 반도체층은 상기 활성층과 접하여 제공된다. 상기 제1층보다 더 적은 밴드갭에너지를 가지는 제2질화물 반도체층은 상기 제1층위로 제공된다. 또한 상기 제2층보다 더 큰 밴드갭에너지를 가지는 제3질화물 반도체층은 상기 제2층위로 제공된다.

Description

질화물 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래 LD장치의 층구조에 해당하는 에너지밴드를 도시함.

Claims (52)

  1. 제1표면 및 제2표면을 가지고 인듐-함유 질화물반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1질화물반도체층과; 상기 활성층의 제1표면위로, 상기 제1질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1질화물반도체층보다 더 적은 밴드갭에너지를 가지는 제2질화물 반도체층; 및 상기 활성층의 제1표면위로, 상기 제2질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치로 형성되며, 상기 제2질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3질화물 반도체층으로 구성되는, 질화물반도체층을 가지는 질화물 반도체 장치.
  2. 제1항에 있어서, 상기 제1질화물 반도체층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
  3. 제1항에 있어서, 상기 제1질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
  4. 제3항에 있어서, 상기 제1질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
  5. 제1항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  6. 제5항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  7. 제5항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
  8. 제1항에 있어서, 상기 층구조는 상기 활성층의 P-사이드에 제공되는 질화물 반도체 장치.
  9. 제8항에 있어서, 상기 제2질화물반도체층은 상기 제1질화물 반도체층과 접해 있는 질화물 반도체 장치.
  10. 제9항에 있어서, 상기 제3질화물 반도체층은 상기 제2질화물반도체층과 접해 있는 질화물 반도체 장치.
  11. 제1항에 있어서, 상기 층구조는 상기 활성층의 n-사이드에 제공되는 질화물 반도체 장치.
  12. 제11항에 있어서, 상기 제2질화물 반도체층은 상기 제1질화물 반도체층과 접해 있는 질화물 반도체 장치.
  13. 제12항에 있어서, 상기 제3질화물 반도체층은 상기 제2질화물 반도체층과 접해 있는 질화물 반도체 장치.
  14. 제1표면 및 제2표면을 가지고 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1층과; 상기 활성층의 제1표면위로, 상기 제1층에 대하여 상기 활성층으로부터 더 멀리 떨어질 위치에 형성되며, 억셉터불순물을 포함하는 질화물 반도체로 구성되고, 상기 제1층 보다 더 적은 밴드갭에너지를 가지는 제2층; 및 상기 활성층의 제1표면위로, 상기 제2층에 대하여 상기 활성층으로부터 더 멀리 떨어질 위치에 형성되며, 억셉터불순물을 포함하는 질화물 반도체로 구성되고, 상기 제2층 보다 더 큰 밴드갭에너지를 가지는 제3층으로 구성되는 질화물 반도체 장치.
  15. 제14항에 있어서, 상기 제1층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
  16. 제14항에 있어서, 상기 제1층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
  17. 제16항에 있어서, 상기 제1층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
  18. 제14항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  19. 제18항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  20. 제18항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
  21. 제14항에 있어서, 상기 제2층은 상기 제1층에 접해 있는 질화물 반도체 장치.
  22. 제21항에 있어서, 상기 제3층은 상기 제2층에 접해 있는 질화물 반도체 장치.
  23. 제1표면 및 제2표면을 가지고 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제2표면에 접하여 형성되고 질화물 반도체로 구성되며, 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1층과; 상기 활성층의 제2표면 위로, 상기 제1층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, n-타입 질화물 반도체로 구성되고, 상기 제1층 보다 더 적은 밴드갭에너지를 가지는 제2층; 및 상기 활성층의 제2표면위로, 상기 제2층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며 n-타입 질화물반도체로 구성되고, 상기 제2층보다 더 큰 밴드갭에너지를 가지는 제3층으로 구성되는 질화물 반도체 장치.
  24. 제23항에 있어서, 상기 제1층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
  25. 제23항에 있어서, 상기 제1층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
  26. 제25항에 있어서, 상기 제1층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
  27. 제23항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  28. 제27항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  29. 제27항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
  30. 제23항에 있어서, 상기 제2층은 상기 제1층과 접해 있는 질화물 반도체 장치.
  31. 제30항에 있어서, 상기 제3층은 상기 제2층과 접해 있는 질화물 반도체 장치.
  32. 제1표면 및 제2표면을 가지고 인듐－함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1p－사이드 질화물 반도체층, 상기 활성층의 제1표면위로, 상기 제1p－사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1p－사이드 질화물 반도체층보다 더 적은 밴드갭에너지를 가지는 제2p－사이드 질화물 반도체층, 및 상기 활성층의 제1표면 위로, 상기 제2p－사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제2p－사이드 질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3p－사이드 질화물 반도체층으로 구성되는 제1질화물 반도체층 구조; 및 상기 활성층의 제2표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1n－사이드 질화물 반도체층, 상기 활성층의 제2표면위로 상기 제1n－사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1n－사이드 질화물 반도체층보다 더 적은 밴드갭에너지를 가지는 제2n－사이드 질화물 반도체층, 및 상기 활성층의 제2표면위로, 상기 제2n－사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며 상기 제2n－사이드 질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3n－사이드 질화물 반도체층으로 구성되는 제2질화물 반도체층 구조로 이루어지는 질화물 반도체 장치.
  33. 제32항에 있어서, 상기 제1p－사이드 질화물 반도체층은 캐리어들이 터널 통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
  34. 제32항에 있어서, 상기 제1p－사이드 질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
  35. 제34항에 있어서, 상기 제1p－사이드 질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
  36. 제32항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  37. 제36항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  38. 제36항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
  39. 제32항에 있어서, 상기 제1n－사이드 질화물 반도체층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
  40. 제32항에 있어서, 상기 제1n－사이드 질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
  41. 제40항에 있어서, 상기 제1n－사이드 질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
  42. 제32항에 있어서, 상기 제2p－사이드 질화물 반도체층은 상기 제1p－사이드 질화물 반도체층에 접하고, 상기 제3p－사이드 질화물 반도체층은 상기 제2p－사이드 질화물 반도체층에 접하는 질화물 반도체 장치.
  43. 제42항에 있어서, 상기 제2n－사이드 질화물 반도체층은 상기 제1p－사이드 질화물 반도체층에 접하고, 상기 제3n－사이드 질화물 반도체층은 상기 제2n－사이드 질화물 반도체층에 접하는 질화물 반도체 장치.
  44. n－타입 접촉층, 알미늄－함유 질화물 반도체로 구성되는 제1n－타입 피복층, 인듐－함유 질화물 반도체 또는 GaN으로 구성되는 제2n－타입 피복층, 인듐－함유 질화물 반도체로 구성되는 양자우물구조의 활성층, 알미늄－함유 질화물 반도체로 구성되는 제1p－타입 피복층, 인듐－함유 질화물 반도체 또는 GaN으로 구성되는 제2p－타입 피복층, 알미늄－함유 질화물 반도체로 구성되는 제3p－타입 피복층, 및 p－타입접촉층으로 이루어지는 층구조를 기판위에 가지는 질화물 반도체 장치.
  45. 제44항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  46. 제45항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  47. 제45항에 있어서, 상기 불순물은 우물층에 도핑되어 있는 질화물 반도체 장치.
  48. n－타입 질화물 반도체로 구성되는 제1피복층과; 70Å 이하의 두께를 가지고 하부층 위로 상기 하부층과 격자 불일치된 상태로 놓여지며 복수개의 인듐－풍부영역과 인듈－결핍영역을 포함하는 적어도 하나의 우물층을 가지고 상기 제1피복층 위에 제공되며, 인듐 및 갈륨함유 질화물 반도체로 구성되는 양자우물구조의 활성층; 및 상기 활성층 위에 제공되어 억셉터 불순물로 도핑된 질화물반도체로 구성되는 제2피복층으로 이루어지는 질화물 반도체 장치.
  49. 제48항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
  50. 제49항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
  51. 제49항에 있어서, 상기 불순물은 상기 우물층에 도핑되어 있는 질화물 반도체 장치.
  52. n－타입의 알미늄－함유 질화물 반도체 또는 n－타입의 갈륨 질화물로 구성되는 제1n－타입층; 및 n－타입의 알미늄－함유 질화물 반도체로 구성되는 제2n－타입층으로 이루어지며, 상기 제1n－타입층 및 상기 제2n－타입층 사이에 n－타입의 인듐－함유 질화물 반도체로 구성되는 제3n－타입층을 포함하는 질화물 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960052331A 1995-11-06 1996-11-06 질화물 반도체 장치 KR100267839B1 (ko)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964882B2 (en) 2006-12-04 2011-06-21 Electronics And Telecommunications Research Institute Nitride semiconductor-based light emitting devices

Families Citing this family (203)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900465B2 (en) * 1994-12-02 2005-05-31 Nichia Corporation Nitride semiconductor light-emitting device
EP1653524A1 (en) * 1995-11-06 2006-05-03 Nichia Corporation Nitride semiconductor device
JP3448450B2 (ja) 1996-04-26 2003-09-22 三洋電機株式会社 発光素子およびその製造方法
JP3304787B2 (ja) 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
SG63757A1 (en) * 1997-03-12 1999-03-30 Hewlett Packard Co Adding impurities to improve the efficiency of allngan quantum well led's
JP4119501B2 (ja) * 1997-07-10 2008-07-16 ローム株式会社 半導体発光素子
JP3822318B2 (ja) * 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法
WO1999005728A1 (en) * 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
US6541797B1 (en) * 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
EP1928034A3 (en) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
US6593589B1 (en) * 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
EP1063711B1 (en) * 1998-03-12 2013-02-27 Nichia Corporation Nitride semiconductor device
JP4138930B2 (ja) * 1998-03-17 2008-08-27 富士通株式会社 量子半導体装置および量子半導体発光装置
US6249534B1 (en) 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11297631A (ja) 1998-04-14 1999-10-29 Matsushita Electron Corp 窒化物系化合物半導体の成長方法
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP2000156544A (ja) 1998-09-17 2000-06-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
WO2000021143A1 (de) * 1998-10-05 2000-04-13 Osram Opto Semiconductors Gmbh & Co. Ohg Strahlungsemittierender halbleiterchip
JP2000124552A (ja) * 1998-10-16 2000-04-28 Agilent Technol Inc 窒化物半導体レーザ素子
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
AU1626400A (en) * 1998-11-16 2000-06-05 Emcore Corporation Iii-nitride quantum well structures with indium-rich clusters and methods of making the same
ATE452445T1 (de) * 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP4037554B2 (ja) * 1999-03-12 2008-01-23 株式会社東芝 窒化物半導体発光素子およびその製造方法
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP2000286448A (ja) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6389051B1 (en) * 1999-04-09 2002-05-14 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
JP4750238B2 (ja) * 1999-06-04 2011-08-17 ソニー株式会社 半導体発光素子
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
US6829273B2 (en) 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
JP2001053339A (ja) * 1999-08-11 2001-02-23 Toshiba Corp 半導体発光素子およびその製造方法
JP3511372B2 (ja) * 1999-08-31 2004-03-29 シャープ株式会社 半導体発光素子およびそれを使用した表示装置
JP2001119102A (ja) * 1999-10-15 2001-04-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザダイオード
US6515313B1 (en) 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
TW459371B (en) * 1999-12-02 2001-10-11 United Epitaxy Co Ltd Quantum well device with anti-electrostatic discharge and the manufacturing method thereof
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
JP3636976B2 (ja) * 2000-03-17 2005-04-06 日本電気株式会社 窒化物半導体素子およびその製造方法
JP2001298028A (ja) * 2000-04-17 2001-10-26 Tokyo Electron Ltd 半導体デバイス製造方法
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP3624794B2 (ja) 2000-05-24 2005-03-02 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP2002084000A (ja) * 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
KR100344103B1 (ko) * 2000-09-04 2002-07-24 에피밸리 주식회사 질화갈륨계 결정 보호막을 형성한 반도체 소자 및 그 제조방법
KR100902109B1 (ko) * 2001-04-12 2009-06-09 니치아 카가쿠 고교 가부시키가이샤 질화 갈륨계 화합물 반도체 소자
JP3912043B2 (ja) 2001-04-25 2007-05-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7132676B2 (en) * 2001-05-15 2006-11-07 Kabushiki Kaisha Toshiba Photon source and a method of operating a photon source
GB2376563A (en) * 2001-06-13 2002-12-18 Sharp Kk A method of growing a magnesium-doped nitride semiconductor material
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
DE10142653A1 (de) * 2001-08-31 2003-04-30 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
CN1236535C (zh) * 2001-11-05 2006-01-11 日亚化学工业株式会社 氮化物半导体元件
US7329554B2 (en) * 2001-11-08 2008-02-12 Midwest Research Institute Reactive codoping of GaAlInP compound semiconductors
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
CN101188344A (zh) * 2002-03-08 2008-05-28 松下电器产业株式会社 半导体激光器和其制造方法
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
US7002180B2 (en) * 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
TW200401462A (en) 2002-06-17 2004-01-16 Kopin Corp Light-emitting diode device geometry
CN1324772C (zh) * 2002-06-19 2007-07-04 日本电信电话株式会社 半导体发光器件
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
GB2392170A (en) * 2002-08-23 2004-02-25 Sharp Kk MBE growth of a semiconductor layer structure
KR100542720B1 (ko) * 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
DE10329079B4 (de) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
TWI233697B (en) * 2003-08-28 2005-06-01 Genesis Photonics Inc AlInGaN light-emitting diode with wide spectrum and solid-state white light device
US20070290230A1 (en) * 2003-09-25 2007-12-20 Yasutoshi Kawaguchi Nitride Semiconductor Device And Production Method Thereof
US7345297B2 (en) * 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
CN100481540C (zh) * 2004-02-24 2009-04-22 昭和电工株式会社 基于氮化镓的化合物半导体多层结构及其制造方法
JP2005294753A (ja) * 2004-04-05 2005-10-20 Toshiba Corp 半導体発光素子
WO2005101532A1 (ja) * 2004-04-16 2005-10-27 Nitride Semiconductors Co., Ltd. 窒化ガリウム系発光装置
US7154163B2 (en) * 2004-05-05 2006-12-26 Supernova Optoelectronics Corp. Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
KR100558455B1 (ko) * 2004-06-25 2006-03-10 삼성전기주식회사 질화물 반도체 소자
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
KR100649496B1 (ko) * 2004-09-14 2006-11-24 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
FI20041213A0 (fi) * 2004-09-17 2004-09-17 Optogan Oy Puolijohdeheterorakenne
CN100356596C (zh) * 2004-10-10 2007-12-19 晶元光电股份有限公司 高亮度氮化铟镓铝发光二极管及其制造方法
US7253451B2 (en) * 2004-11-29 2007-08-07 Epivalley Co., Ltd. III-nitride semiconductor light emitting device
CN100379042C (zh) * 2005-02-18 2008-04-02 乐清市亿昊科技发展有限公司 发光二极管管芯的基底结构体及制造基底结构体的方法
CN100380695C (zh) * 2005-03-03 2008-04-09 乐清市亿昊科技发展有限公司 发光二极管管芯及其制造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
WO2006099211A2 (en) * 2005-03-11 2006-09-21 Ponce Fernando A Solid state light emitting device
KR100631980B1 (ko) * 2005-04-06 2006-10-11 삼성전기주식회사 질화물 반도체 소자
KR100748247B1 (ko) * 2005-07-06 2007-08-09 삼성전기주식회사 질화물계 반도체 발광다이오드 및 그 제조방법
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
US20070045638A1 (en) * 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
JP2007066981A (ja) * 2005-08-29 2007-03-15 Toshiba Corp 半導体装置
KR100691283B1 (ko) * 2005-09-23 2007-03-12 삼성전기주식회사 질화물 반도체 소자
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007294878A (ja) * 2006-03-31 2007-11-08 Fujifilm Corp 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置
DE102006025964A1 (de) * 2006-06-02 2007-12-06 Osram Opto Semiconductors Gmbh Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement
RU2306634C1 (ru) * 2006-08-08 2007-09-20 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Полупроводниковая светоизлучающая гетероструктура
KR20080023980A (ko) * 2006-09-12 2008-03-17 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
EP1921669B1 (en) * 2006-11-13 2015-09-02 Cree, Inc. GaN based HEMTs with buried field plates
US7612362B2 (en) * 2006-11-22 2009-11-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
JP2008226906A (ja) * 2007-03-08 2008-09-25 Sharp Corp 窒化物半導体発光素子
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8039740B2 (en) * 2007-06-20 2011-10-18 Rosestreet Labs Energy, Inc. Single P-N junction tandem photovoltaic device
JP4341702B2 (ja) 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
CN101330118B (zh) * 2007-06-22 2010-06-09 晶能光电（江西）有限公司 用于制造p型半导体结构的方法
KR101393953B1 (ko) * 2007-06-25 2014-05-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
KR101316423B1 (ko) 2007-08-09 2013-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100887050B1 (ko) * 2007-12-06 2009-03-04 삼성전기주식회사 질화물 반도체 소자
JP4720834B2 (ja) * 2008-02-25 2011-07-13 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
JP5279006B2 (ja) * 2008-03-26 2013-09-04 パナソニック株式会社 窒化物半導体発光素子
DE102009018603B9 (de) * 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
US8664747B2 (en) * 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
KR20090117538A (ko) * 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
WO2010101335A1 (en) * 2009-03-06 2010-09-10 Chung Hoon Lee Light emitting device
US8207547B2 (en) * 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
CN104716023B (zh) * 2009-08-26 2017-08-29 首尔伟傲世有限公司 制造半导体基底的方法和制造发光装置的方法
TWI405409B (zh) * 2009-08-27 2013-08-11 Novatek Microelectronics Corp 低電壓差動訊號輸出級
JP5916980B2 (ja) * 2009-09-11 2016-05-11 シャープ株式会社 窒化物半導体発光ダイオード素子の製造方法
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
US10115859B2 (en) * 2009-12-15 2018-10-30 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
US8907321B2 (en) * 2009-12-16 2014-12-09 Lehigh Univeristy Nitride based quantum well light-emitting devices having improved current injection efficiency
KR101754900B1 (ko) * 2010-04-09 2017-07-06 엘지이노텍 주식회사 발광 소자
TWI485875B (zh) * 2010-06-24 2015-05-21 Hitachi Chemical Co Ltd 形成不純物擴散層的組成物、形成ｎ型擴散層的組成物、ｎ型擴散層的製造方法、形成ｐ型擴散層的組成物、ｐ型擴散層的製造方法及太陽能電池的製造方法
EP2408028B1 (en) 2010-07-16 2015-04-08 LG Innotek Co., Ltd. Light emitting device
EP2628183A4 (en) 2010-10-12 2014-04-02 Alliance Sustainable Energy III-V BAND WEAPONS IMPORTANT FOR OPTOELECTRONIC COMPONENTS OF HIGH EFFICIENCY
US20120180868A1 (en) * 2010-10-21 2012-07-19 The Regents Of The University Of California Iii-nitride flip-chip solar cells
US20120103419A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material
JP2012104528A (ja) * 2010-11-08 2012-05-31 Sharp Corp 窒化物半導体発光素子
RU2456711C1 (ru) * 2010-11-11 2012-07-20 Общество с ограниченной ответственностью "Галлий-Н" Полупроводниковый светоизлучающий элемент
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
CN102738340B (zh) * 2011-04-01 2015-07-22 山东华光光电子有限公司 一种采用AlInN量子垒提高GaN基LED内量子效率的LED结构及制备方法
KR101781435B1 (ko) 2011-04-13 2017-09-25 삼성전자주식회사 질화물 반도체 발광소자
CN102157646A (zh) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
CN102201505A (zh) * 2011-05-03 2011-09-28 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US8648384B2 (en) * 2011-07-25 2014-02-11 Lg Innotek Co., Ltd. Light emitting device
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8669585B1 (en) 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
WO2013147946A1 (en) 2012-03-30 2013-10-03 The Regents Of The University Of Michigan Gan-based quantum dot visible laser
TW201401558A (zh) * 2012-06-28 2014-01-01 Lextar Electronics Corp 發光二極體結構及其製作方法
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
TW201513397A (zh) * 2013-09-26 2015-04-01 Lextar Electronics Corp 發光二極體之製造方法
US9337369B2 (en) 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
CN107924966B (zh) 2014-09-22 2020-12-22 夏普株式会社 氮化物半导体发光元件
DE102014117611A1 (de) * 2014-12-01 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9793252B2 (en) 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
KR102347387B1 (ko) * 2015-03-31 2022-01-06 서울바이오시스 주식회사 자외선 발광 소자
CN105957936B (zh) * 2016-06-24 2018-04-13 太原理工大学 一种duv led外延片结构
DE102016111929A1 (de) * 2016-06-29 2018-01-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Leuchtdiode
WO2019097963A1 (ja) * 2017-11-16 2019-05-23 パナソニック株式会社 Ｉｉｉ族窒化物半導体
CN109599466A (zh) * 2018-12-03 2019-04-09 广东工业大学 一种双波长led外延结构及其制作方法
CN110676283B (zh) * 2019-10-16 2022-03-25 福州大学 一种基于纳米线的μLED显示设计方法

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115385A (ja) 1984-07-02 1986-01-23 Nec Corp 半導体レ−ザ
JPH0680859B2 (ja) 1984-12-27 1994-10-12 ソニー株式会社 半導体レーザー
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
GB9024332D0 (en) 1990-11-08 1990-12-19 British Telecomm Method of training a neural network
US5412226A (en) * 1989-11-20 1995-05-02 British Telecommunications Public Limited Company Semi-conductor structures
JPH03290984A (ja) * 1990-04-06 1991-12-20 Matsushita Electron Corp 半導体レーザ
JP2564024B2 (ja) * 1990-07-09 1996-12-18 シャープ株式会社 化合物半導体発光素子
JPH04218994A (ja) * 1990-08-31 1992-08-10 Toshiba Corp 半導体発光装置
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
GB9123638D0 (en) * 1991-11-07 1992-01-02 Magill Alan R Apparel & fabric & devices suitable for health monitoring applications
US5308327A (en) * 1991-11-25 1994-05-03 Advanced Surgical Inc. Self-deployed inflatable retractor
US5309921A (en) * 1992-02-11 1994-05-10 Spectrum Medical Technologies Apparatus and method for respiratory monitoring
US5800360A (en) * 1992-02-11 1998-09-01 Spectrum Medical Technologies, Inc. Apparatus and method for respiratory monitoring
DE69331979T2 (de) * 1992-02-28 2003-01-23 Hitachi, Ltd. Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
US5818072A (en) 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JP3243768B2 (ja) 1992-07-06 2002-01-07 日本電信電話株式会社 半導体発光素子
JP2917742B2 (ja) 1992-07-07 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子とその製造方法
US5294883A (en) * 1992-08-04 1994-03-15 International Business Machines Corporation Test detector/shutoff and method for BiCMOS integrated circuit
WO1994003931A1 (fr) * 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Dispositif semi-conducteur a base de nitrure et fabrication
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JPH06164055A (ja) 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd 量子井戸型半導体レーザ
JPH06164085A (ja) 1992-11-27 1994-06-10 Nitto Denko Corp 複合フレキシブル基板
JP2827794B2 (ja) 1993-02-05 1998-11-25 日亜化学工業株式会社 ｐ型窒化ガリウムの成長方法
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
JP2778405B2 (ja) 1993-03-12 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2932467B2 (ja) 1993-03-12 1999-08-09 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH0774431A (ja) 1993-06-23 1995-03-17 Furukawa Electric Co Ltd:The 半導体光素子
US5479932A (en) * 1993-08-16 1996-01-02 Higgins; Joseph Infant health monitoring system
US5383211A (en) * 1993-11-02 1995-01-17 Xerox Corporation TM-polarized laser emitter using III-V alloy with nitrogen
JPH07235729A (ja) 1994-02-21 1995-09-05 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体レーザ素子
JPH07235723A (ja) 1994-02-23 1995-09-05 Hitachi Ltd 半導体レーザ素子
JP3325380B2 (ja) 1994-03-09 2002-09-17 株式会社東芝 半導体発光素子およびその製造方法
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
EP0675552B1 (en) * 1994-03-22 2001-08-08 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using group III nitrogen compound
US6005258A (en) * 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
JPH07297447A (ja) 1994-04-20 1995-11-10 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
WO1996003776A1 (fr) * 1994-07-21 1996-02-08 Matsushita Electric Industrial Co., Ltd. Dispositif a semi-conducteur emettant de la lumiere et procede de production de celui-ci
JP2956489B2 (ja) 1994-06-24 1999-10-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JP3561536B2 (ja) 1994-08-23 2004-09-02 三洋電機株式会社 半導体発光素子
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
JPH08116128A (ja) 1994-10-17 1996-05-07 Fujitsu Ltd 半導体量子井戸光素子
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JPH08290218A (ja) 1995-04-19 1996-11-05 Hirata Corp 曲げ加工装置及び曲げ加工方法
JP3728332B2 (ja) 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH08316581A (ja) 1995-05-18 1996-11-29 Sanyo Electric Co Ltd 半導体装置および半導体発光素子
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
JP2839077B2 (ja) * 1995-06-15 1998-12-16 日本電気株式会社 窒化ガリウム系化合物半導体発光素子
JPH0964419A (ja) 1995-08-28 1997-03-07 Sumitomo Chem Co Ltd ３−５族化合物半導体及び発光素子
JP2919788B2 (ja) 1995-08-31 1999-07-19 株式会社東芝 半導体装置、半導体装置の製造方法、及び窒化ガリウム系半導体の成長方法
US6258617B1 (en) 1995-08-31 2001-07-10 Kabushiki Kaisha Toshiba Method of manufacturing blue light emitting element
US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5789876A (en) * 1995-09-14 1998-08-04 The Regents Of The Univeristy Of Michigan Method and apparatus for generating and accelerating ultrashort electron pulses
JPH09116225A (ja) 1995-10-20 1997-05-02 Hitachi Ltd 半導体発光素子
JP3727091B2 (ja) 1995-10-31 2005-12-14 豊田合成株式会社 ３族窒化物半導体素子
JP2900990B2 (ja) 1995-11-24 1999-06-02 日亜化学工業株式会社 窒化物半導体発光素子
EP1653524A1 (en) * 1995-11-06 2006-05-03 Nichia Corporation Nitride semiconductor device
JP2877063B2 (ja) 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
JP3235440B2 (ja) 1995-11-24 2001-12-04 日亜化学工業株式会社 窒化物半導体レーザ素子とその製造方法
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6009180A (en) 1996-09-17 1999-12-28 The Boeing Company Fluidic element noise and vibration control constructs and methods
WO1998051597A1 (en) * 1997-05-13 1998-11-19 Ser-Tek Systems, Inc. Conveyor with integrated self-actuating clamp
JP4242985B2 (ja) 1999-10-26 2009-03-25 帝人株式会社 イソフタレート系ポリエステルの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964882B2 (en) 2006-12-04 2011-06-21 Electronics And Telecommunications Research Institute Nitride semiconductor-based light emitting devices

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US5959307A (en) 1999-09-28
CN100350641C (zh) 2007-11-21
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US8304790B2 (en) 2012-11-06
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