KR970026601A - 질화물 반도체 장치 - Google Patents
질화물 반도체 장치 Download PDFInfo
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- KR970026601A KR970026601A KR1019960052331A KR19960052331A KR970026601A KR 970026601 A KR970026601 A KR 970026601A KR 1019960052331 A KR1019960052331 A KR 1019960052331A KR 19960052331 A KR19960052331 A KR 19960052331A KR 970026601 A KR970026601 A KR 970026601A
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- nitride semiconductor
- layer
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- active layer
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- 150000004767 nitrides Chemical class 0.000 title claims abstract 129
- 239000004065 semiconductor Substances 0.000 title claims abstract 129
- 229910052738 indium Inorganic materials 0.000 claims abstract 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract 10
- 239000010410 layer Substances 0.000 claims 143
- 239000012535 impurity Substances 0.000 claims 21
- 239000011247 coating layer Substances 0.000 claims 7
- 229910052732 germanium Inorganic materials 0.000 claims 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 239000000969 carrier Substances 0.000 claims 5
- 229910002601 GaN Inorganic materials 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 238000005253 cladding Methods 0.000 claims 1
- 230000002950 deficient Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
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Abstract
질화물 반도체 장치는 질화물 반도체 층구조를 가진다. 상기 구조는 인듐-함유 질화물 반도체를 포함하는 양자우물구조의 활성층을 포함한다. 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1질화물 반도체층은 상기 활성층과 접하여 제공된다. 상기 제1층보다 더 적은 밴드갭에너지를 가지는 제2질화물 반도체층은 상기 제1층위로 제공된다. 또한 상기 제2층보다 더 큰 밴드갭에너지를 가지는 제3질화물 반도체층은 상기 제2층위로 제공된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래 LD장치의 층구조에 해당하는 에너지밴드를 도시함.
Claims (52)
- 제1표면 및 제2표면을 가지고 인듐-함유 질화물반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1질화물반도체층과; 상기 활성층의 제1표면위로, 상기 제1질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1질화물반도체층보다 더 적은 밴드갭에너지를 가지는 제2질화물 반도체층; 및 상기 활성층의 제1표면위로, 상기 제2질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치로 형성되며, 상기 제2질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3질화물 반도체층으로 구성되는, 질화물반도체층을 가지는 질화물 반도체 장치.
- 제1항에 있어서, 상기 제1질화물 반도체층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
- 제1항에 있어서, 상기 제1질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
- 제3항에 있어서, 상기 제1질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
- 제1항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제5항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제5항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
- 제1항에 있어서, 상기 층구조는 상기 활성층의 P-사이드에 제공되는 질화물 반도체 장치.
- 제8항에 있어서, 상기 제2질화물반도체층은 상기 제1질화물 반도체층과 접해 있는 질화물 반도체 장치.
- 제9항에 있어서, 상기 제3질화물 반도체층은 상기 제2질화물반도체층과 접해 있는 질화물 반도체 장치.
- 제1항에 있어서, 상기 층구조는 상기 활성층의 n-사이드에 제공되는 질화물 반도체 장치.
- 제11항에 있어서, 상기 제2질화물 반도체층은 상기 제1질화물 반도체층과 접해 있는 질화물 반도체 장치.
- 제12항에 있어서, 상기 제3질화물 반도체층은 상기 제2질화물 반도체층과 접해 있는 질화물 반도체 장치.
- 제1표면 및 제2표면을 가지고 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1층과; 상기 활성층의 제1표면위로, 상기 제1층에 대하여 상기 활성층으로부터 더 멀리 떨어질 위치에 형성되며, 억셉터불순물을 포함하는 질화물 반도체로 구성되고, 상기 제1층 보다 더 적은 밴드갭에너지를 가지는 제2층; 및 상기 활성층의 제1표면위로, 상기 제2층에 대하여 상기 활성층으로부터 더 멀리 떨어질 위치에 형성되며, 억셉터불순물을 포함하는 질화물 반도체로 구성되고, 상기 제2층 보다 더 큰 밴드갭에너지를 가지는 제3층으로 구성되는 질화물 반도체 장치.
- 제14항에 있어서, 상기 제1층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
- 제14항에 있어서, 상기 제1층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
- 제16항에 있어서, 상기 제1층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
- 제14항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제18항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제18항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
- 제14항에 있어서, 상기 제2층은 상기 제1층에 접해 있는 질화물 반도체 장치.
- 제21항에 있어서, 상기 제3층은 상기 제2층에 접해 있는 질화물 반도체 장치.
- 제1표면 및 제2표면을 가지고 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제2표면에 접하여 형성되고 질화물 반도체로 구성되며, 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1층과; 상기 활성층의 제2표면 위로, 상기 제1층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, n-타입 질화물 반도체로 구성되고, 상기 제1층 보다 더 적은 밴드갭에너지를 가지는 제2층; 및 상기 활성층의 제2표면위로, 상기 제2층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며 n-타입 질화물반도체로 구성되고, 상기 제2층보다 더 큰 밴드갭에너지를 가지는 제3층으로 구성되는 질화물 반도체 장치.
- 제23항에 있어서, 상기 제1층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
- 제23항에 있어서, 상기 제1층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
- 제25항에 있어서, 상기 제1층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
- 제23항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제27항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제27항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
- 제23항에 있어서, 상기 제2층은 상기 제1층과 접해 있는 질화물 반도체 장치.
- 제30항에 있어서, 상기 제3층은 상기 제2층과 접해 있는 질화물 반도체 장치.
- 제1표면 및 제2표면을 가지고 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층과; 상기 활성층의 제1표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1p-사이드 질화물 반도체층, 상기 활성층의 제1표면위로, 상기 제1p-사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1p-사이드 질화물 반도체층보다 더 적은 밴드갭에너지를 가지는 제2p-사이드 질화물 반도체층, 및 상기 활성층의 제1표면 위로, 상기 제2p-사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제2p-사이드 질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3p-사이드 질화물 반도체층으로 구성되는 제1질화물 반도체층 구조; 및 상기 활성층의 제2표면에 접하여 형성되고 상기 활성층보다 더 큰 밴드갭에너지를 가지는 제1n-사이드 질화물 반도체층, 상기 활성층의 제2표면위로 상기 제1n-사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며, 상기 제1n-사이드 질화물 반도체층보다 더 적은 밴드갭에너지를 가지는 제2n-사이드 질화물 반도체층, 및 상기 활성층의 제2표면위로, 상기 제2n-사이드 질화물 반도체층에 대하여 상기 활성층으로부터 더 멀리 떨어진 위치에 형성되며 상기 제2n-사이드 질화물 반도체층보다 더 큰 밴드갭에너지를 가지는 제3n-사이드 질화물 반도체층으로 구성되는 제2질화물 반도체층 구조로 이루어지는 질화물 반도체 장치.
- 제32항에 있어서, 상기 제1p-사이드 질화물 반도체층은 캐리어들이 터널 통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
- 제32항에 있어서, 상기 제1p-사이드 질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
- 제34항에 있어서, 상기 제1p-사이드 질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
- 제32항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제36항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제36항에 있어서, 상기 불순물은 상기 적어도 하나의 우물층에 도핑되어 있는 질화물 반도체 장치.
- 제32항에 있어서, 상기 제1n-사이드 질화물 반도체층은 캐리어들이 터널통과할 수 있기에 충분한 얇은 두께를 가지는 질화물 반도체 장치.
- 제32항에 있어서, 상기 제1n-사이드 질화물 반도체층은 0.1㎛ 이하의 두께를 가지는 질화물 반도체 장치.
- 제40항에 있어서, 상기 제1n-사이드 질화물 반도체층은 10Å 이상의 두께를 가지는 질화물 반도체 장치.
- 제32항에 있어서, 상기 제2p-사이드 질화물 반도체층은 상기 제1p-사이드 질화물 반도체층에 접하고, 상기 제3p-사이드 질화물 반도체층은 상기 제2p-사이드 질화물 반도체층에 접하는 질화물 반도체 장치.
- 제42항에 있어서, 상기 제2n-사이드 질화물 반도체층은 상기 제1p-사이드 질화물 반도체층에 접하고, 상기 제3n-사이드 질화물 반도체층은 상기 제2n-사이드 질화물 반도체층에 접하는 질화물 반도체 장치.
- n-타입 접촉층, 알미늄-함유 질화물 반도체로 구성되는 제1n-타입 피복층, 인듐-함유 질화물 반도체 또는 GaN으로 구성되는 제2n-타입 피복층, 인듐-함유 질화물 반도체로 구성되는 양자우물구조의 활성층, 알미늄-함유 질화물 반도체로 구성되는 제1p-타입 피복층, 인듐-함유 질화물 반도체 또는 GaN으로 구성되는 제2p-타입 피복층, 알미늄-함유 질화물 반도체로 구성되는 제3p-타입 피복층, 및 p-타입접촉층으로 이루어지는 층구조를 기판위에 가지는 질화물 반도체 장치.
- 제44항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제45항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제45항에 있어서, 상기 불순물은 우물층에 도핑되어 있는 질화물 반도체 장치.
- n-타입 질화물 반도체로 구성되는 제1피복층과; 70Å 이하의 두께를 가지고 하부층 위로 상기 하부층과 격자 불일치된 상태로 놓여지며 복수개의 인듐-풍부영역과 인듈-결핍영역을 포함하는 적어도 하나의 우물층을 가지고 상기 제1피복층 위에 제공되며, 인듐 및 갈륨함유 질화물 반도체로 구성되는 양자우물구조의 활성층; 및 상기 활성층 위에 제공되어 억셉터 불순물로 도핑된 질화물반도체로 구성되는 제2피복층으로 이루어지는 질화물 반도체 장치.
- 제48항에 있어서, 상기 활성층은 불순물로 도핑되어 있는 질화물 반도체 장치.
- 제49항에 있어서, 상기 불순물은 실리콘 또는 게르마늄으로 구성되는 질화물 반도체 장치.
- 제49항에 있어서, 상기 불순물은 상기 우물층에 도핑되어 있는 질화물 반도체 장치.
- n-타입의 알미늄-함유 질화물 반도체 또는 n-타입의 갈륨 질화물로 구성되는 제1n-타입층; 및 n-타입의 알미늄-함유 질화물 반도체로 구성되는 제2n-타입층으로 이루어지며, 상기 제1n-타입층 및 상기 제2n-타입층 사이에 n-타입의 인듐-함유 질화물 반도체로 구성되는 제3n-타입층을 포함하는 질화물 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP95-2857189 | 1995-11-06 | ||
JP95-287189 | 1995-11-06 | ||
JP30528195A JP2900990B2 (ja) | 1995-11-24 | 1995-11-24 | 窒化物半導体発光素子 |
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JP30527995A JP3235440B2 (ja) | 1995-11-24 | 1995-11-24 | 窒化物半導体レーザ素子とその製造方法 |
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JP33205695A JP2891348B2 (ja) | 1995-11-24 | 1995-12-20 | 窒化物半導体レーザ素子 |
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- 1996-11-06 EP EP96117792A patent/EP0772249B1/en not_active Expired - Lifetime
- 1996-11-06 CN CNB961205253A patent/CN1160801C/zh not_active Expired - Lifetime
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Also Published As
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CN1160801C (zh) | 2004-08-04 |
US20040183063A1 (en) | 2004-09-23 |
US5959307A (en) | 1999-09-28 |
CN100350641C (zh) | 2007-11-21 |
US20070272915A1 (en) | 2007-11-29 |
US7166874B2 (en) | 2007-01-23 |
EP0772249B1 (en) | 2006-05-03 |
CN1525578A (zh) | 2004-09-01 |
EP0772249A2 (en) | 1997-05-07 |
CN1264262C (zh) | 2006-07-12 |
EP1653524A1 (en) | 2006-05-03 |
KR100267839B1 (ko) | 2000-10-16 |
US7166869B2 (en) | 2007-01-23 |
US20030015724A1 (en) | 2003-01-23 |
CN1525612A (zh) | 2004-09-01 |
US8304790B2 (en) | 2012-11-06 |
DE69636088D1 (de) | 2006-06-08 |
CN1156909A (zh) | 1997-08-13 |
DE69636088T2 (de) | 2006-11-23 |
US20040101012A1 (en) | 2004-05-27 |
EP0772249A3 (en) | 1998-11-04 |
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