KR960706696A - 실리콘 카바이드와 갈륨 나이트라이드 사이의 버퍼 구조와 이 구조로 형성되는 반도체 장치 - Google Patents

실리콘 카바이드와 갈륨 나이트라이드 사이의 버퍼 구조와 이 구조로 형성되는 반도체 장치

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Publication number
KR960706696A
KR960706696A KR1019960703125A KR19960703125A KR960706696A KR 960706696 A KR960706696 A KR 960706696A KR 1019960703125 A KR1019960703125 A KR 1019960703125A KR 19960703125 A KR19960703125 A KR 19960703125A KR 960706696 A KR960706696 A KR 960706696A
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South Korea
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layer
gallium nitride
aluminum nitride
nitride
single crystal
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KR1019960703125A
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English (en)
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KR100253026B1 (ko
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에이. 에드몬드 존
드미트리에프 블라드미르
얼빈 케네쓰
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에프. 니얼 헌티
크리 리서치 아이엔씨
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Publication of KR960706696A publication Critical patent/KR960706696A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Ceramic Products (AREA)

Abstract

전이 결정 구조가 단결정 실리콘 카바이드 층과 단결정 갈륨 나이트라이드 층 사이의 우수한 격자 매치와 열 매치를 제공하는 것이 기술되어 있다. 상기 전이 구조는 갈륨 나이트라이드와 알루미늄 나이트라이드의 제 일층과 상기 제 일층에 인접한 갈륨 나이트라이드와 알루미늄 나이트라이드의 제 이층으로 형성된 버퍼를 포함한다. 상기 제 이층 중의 알루미늄 나이트라이드의 몰 퍼센트는 상기 제 일층 중의 알루미늄 나이트라이드의 몰 퍼센트와 실질적으로 다르다. 단결정 갈륨 나이트라이드 층은 갈륨 나이트라이드의 상기 제 이층 위에 형성된다. 바람직한 실시예에 있어서, 상기 버퍼는 실리콘 카바이드 기판 위에 형성된 알루미늄 나이트라이드의 에피텍셜 층을 더욱 포함한다.

Description

실리콘 카바이드와 갈륨 나이트라이드 사이의 버퍼 구조와 이 구조로 형성되는 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

  1. 갈륨 나이트라이드와 알루미늄 나이트라이드의 제 일층과; 상기 제 일층에 인접한 갈륨 나이트라이드와 알루미늄 나이트라이드의 제 이층으로서, 상기 제 이층 중의 알루미늄 나이트라이드의 몰 퍼센트는 상기 제 일층 중의 알루미늄 나이트라이드의 몰 퍼센트와 실질적으로 다른 제 이층으로 형성된 버퍼와; 갈륨 나이트라이드와 알루미늄 나이트라이드의 상기 제 이층 위에 형성된 단결정 갈륨 나이트라이드의 층을 포함하는 단결정 실리콘 카바이드와 단결정 갈륨 나이트라이드 층 사이의 우수한 격자와 열 매치를 제공하기 위한 전이 구조.
  2. 제1항에 있어서, 상기 제 일층 중의 갈륨 나이트라이드의 몰 퍼센트는 상기 제 일층 중의 알루미늄 나이트라이드의 몰 퍼센트보다 크고; 상기 제 이층 중의 알루미늄 나이트라이드의 몰 퍼센트는 상기 제 이층 중의 갈륨 나이트라이드의 몰 퍼센트보다 큰 구조.
  3. 제2항에 있어서, 단결정 실리콘 카바이드 기판을 더욱 포함하고; 상기 버퍼는 상기 실리콘 카바이드 위에 알루미늄 나이트라이드의 에리텍셜 층을 더욱 포함하는 구조.
  4. 제3항에 있어서, 갈륨 나이트라이드와 알루미늄 나이트라이드의 상기 제 일층은 약 20 내지 50몰 퍼센트 사이의 알루미늄 나이트라이드인 구조.
  5. 제3항에 있어서, 갈륨 나이트라이드와 알루미늄 나이트라이드의 상기 제 일층은 약 30몰 퍼센트 알루미늄 나이트라이드인 구조.
  6. 제3항에 있어서, 갈륨 나이트라이드와 알루미늄 나이트라이드의 상기 제 이층은 약 60 내지 95몰 퍼센트 사이의 알루미늄 나이트라이드인 구조.
  7. 제3항에 있어서, 갈륨 나이트라이드와 알루미늄 나이트라이드의 상기 제 이층은 약 90몰 퍼센트 알루미늄 나이트라이드인 구조.
  8. 제3항에 있어서, 상기 기판은 실리콘 카바이드의 6H, 4H와 3C의 폴리타입으로 이루어진 그룹 중에서 선택되는 것인 구조.
  9. 상기 버퍼용 단결정 실리콘 카바이드 기판; 제 일 도전성 타입을 갖는 상기 버퍼의 갈륨 나이트라이드의 상기 단결정 층; 상기 단결정 갈륨 나이트라이드 층위에, 상기 제 일 도전성 타입과 반대되는 도전성 타입을 갖는 갈륨 나이트라이드의 제 이 단결정 층으로서, 상기 단결정 갈륨 나이트라이드는 상기 제 일 및 제 이 단결정층 사이에 p-n 접합을 형성하는 그리고, 상기 기판과 상기 제 이 갈륨 나이트라이드 층에 대한 옴 접촉을 더욱 포함하고, 제 1항의 전이 결정 구조로부터 형성되는 수직 발광 다이오드.
  10. 제9항에 있어서, 상기 버퍼는 상기 실리콘 카바이드 기판 위에 형성된 알루미늄 나이트라이드의 에피텍셜 층을 더욱 포함하는 발광 다이오드.
  11. 제9항에 있어서, 상기 버퍼는 도전적 도우프된 발광 다이오드.
  12. 제9항에 있어서, 상기 버퍼는 절연체이고 상기 다이오드는 상기 기판과 갈륨 나이트라이드의 상기 제 일 단결정 층 사이의 단락 접촉을 더욱 포함하는 발광 다이오드.
  13. 제9항에 있어서, 갈륨 나이트라이드의 상기 제 일층과 상기 제 이층 사이의 갈륨 나이트라이드 합금의 에피텍셜 층을 더욱 포함하는 발광 다이오드.
  14. 제13항에 있어서, 상기 갈륨 나이트라이드 합금은 인듐 갈륨 나이트라이드를 포함하는 발광 다이오드.
  15. 제9항에 있어서, 약 410과 470 나노미터 사이의 파장에서 피크 방출을 하는 발광 다이오드.
  16. 제9항에 있어서, 약 470과 560 나노미터 사이의 파장에서 피크 방출을 하는 발광 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960703125A 1993-12-13 1994-11-01 실리콘 카바이드와 갈륨나이트라이드 사이의 버퍼구조와 이 구조로 형성되는 반도체 장치 KR100253026B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/166,229 US5393993A (en) 1993-12-13 1993-12-13 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US166,229 1993-12-13
US8/166229 1993-12-13
PCT/US1994/013940 WO1995017019A1 (en) 1993-12-13 1994-11-01 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

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KR960706696A true KR960706696A (ko) 1996-12-09
KR100253026B1 KR100253026B1 (ko) 2000-04-15

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US (1) US5393993A (ko)
EP (1) EP0734593B1 (ko)
JP (1) JP2741705B2 (ko)
KR (1) KR100253026B1 (ko)
CN (1) CN1059755C (ko)
AT (1) ATE176553T1 (ko)
AU (1) AU1300295A (ko)
CA (1) CA2177465C (ko)
DE (1) DE69416427T2 (ko)
TW (1) TW273051B (ko)
WO (1) WO1995017019A1 (ko)

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KR100651145B1 (ko) * 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드
KR100460332B1 (ko) * 2002-05-23 2004-12-08 박정희 실리콘 카바이드 나노선의 제조방법

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CN1137331A (zh) 1996-12-04
CA2177465C (en) 2000-10-10
JP2741705B2 (ja) 1998-04-22
US5393993A (en) 1995-02-28
AU1300295A (en) 1995-07-03
ATE176553T1 (de) 1999-02-15
EP0734593B1 (en) 1999-02-03
JPH09508751A (ja) 1997-09-02
TW273051B (ko) 1996-03-21
CN1059755C (zh) 2000-12-20
WO1995017019A1 (en) 1995-06-22
KR100253026B1 (ko) 2000-04-15
DE69416427D1 (de) 1999-03-18
DE69416427T2 (de) 1999-10-21
EP0734593A1 (en) 1996-10-02

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