WO2000058999B1 - Semiconductor structures having a strain compensated layer and method of fabrication - Google Patents

Semiconductor structures having a strain compensated layer and method of fabrication

Info

Publication number
WO2000058999B1
WO2000058999B1 PCT/IB2000/000892 IB0000892W WO0058999B1 WO 2000058999 B1 WO2000058999 B1 WO 2000058999B1 IB 0000892 W IB0000892 W IB 0000892W WO 0058999 B1 WO0058999 B1 WO 0058999B1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
superlattice
constituent
semiconductor structure
conductivity type
Prior art date
Application number
PCT/IB2000/000892
Other languages
French (fr)
Other versions
WO2000058999A9 (en
WO2000058999A2 (en
WO2000058999A3 (en
Inventor
Toru Takayama
Takaaki Baba
James S Harris Jr
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP2000608410A priority Critical patent/JP2002540618A/en
Priority to EP00940681A priority patent/EP1183761A2/en
Publication of WO2000058999A2 publication Critical patent/WO2000058999A2/en
Publication of WO2000058999A3 publication Critical patent/WO2000058999A3/en
Publication of WO2000058999B1 publication Critical patent/WO2000058999B1/en
Publication of WO2000058999A9 publication Critical patent/WO2000058999A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

The present invention provides a semiconductor structure which includes a strain compensated superlattice layer comprising a plurality of pairs of constituent layers, with the first constituent layer comprising a material under tensile stress, and the second constituent layer comprising a material under compressive stress, such that the stresses of the adjacent layer compensate one another and lead to reduced defect generation. Appropriate selection of materials provides increased band gap and optical confinement in at least some implementations. The structure is particularly suited to the construction of laser diodes, photodiodes, phototransistors, and heterojunction field effect and bipolar transistors.

Claims

AMENDED CLAIMS[received by the International Bureau on 29 January 2001 (29.01.01); original claims 1, 2 and 7 amended, remaining claims unchanged (2 pages)]
1. (Amended) A semiconductor structure comprising a substrate of a first conductivity; and a first superlattice layer comprising a plurality of pairs of first and second constitute layers which consist at least four different atoms, the first constitute layer comprising a material under tensile stress and the second constitute layer comprising a material under compressive stress, the compressive and tensile stresses each compensating the other at the interface therebetween.
2. (Amended) The semiconductor structure of claim 1 further comprising an active layer formed above the first superlattice layer, the superlattice layer having a conductivity of a first type, and a second superlattice layer of a conductivity type complementary to the first type comprising a plurality of pairs of third and fourth constitute layers which consist at least four different atoms, the third constituent layer comprising a material under tensile stress and the fourth constituent layer comprising a material under compressive stress, the compressive and tensile stresses each compensating the other at the interface therebetween.
3. The semiconductor structure of claim 1 wherein the substrate is GaN, the semiconductor structure further comprising a first i-GaN cladding layer formed between the substrate and the first superlattice layer, and 25 an n-GaN channel layer formed between the i-GaN cladding layer and the first superlattice layer.
4. The semiconductor structure of claim 1 further including a base layer and an emitter layer and wherein the first superlattice layer comprises a collector layer.
30
5. The semiconductor structure of claim 1 further comprising a first cladding layer formed above and having the same conductivity type as the substrate, a second cladding layer of the same conductivity type as the substrate, 35 an active layer, and wherein the first superlattice layer forms a third cladding layer and is of a conductivity type complementary to the conductivity type of the substrate, 28
a blocking layer formed above the superlattice third cladding layer and having a window therein which exposes a portion of the superlattice third cladding layer.
6. The semiconductor structure of claiml wherein the substrate is of GaN and the 5 first superlattice layer forms a collector layer, and further including a base layer and a superlattice emitter layer comprised of a plurality of pairs of strain-compensated constituent layers.
7. (Amended) A method of fabricating a semiconductor structure compπsmg providmg a substrate of a first conductivity type, forming a first constituent layer of less than critical thickness, the first layer being under tensile stress of a predetermined magnitude. forming a second constituent layer above the first constituent layer, the second layer being under compressive stress of approximately the same predetermined magnitude as the tensile stress of the first constituent layer, such that the tensile and the compressive stresses in the constituent layers compensate for one another, and the said first and second constituent layers consist at least four different atoms.
8. A transistor device comprising on a semi-insulating layer of ln1-)(1.y1Gax,A!y,N layer, an n-type In^^Ga^Al^N
20 conductive channel layer, an n-type of a superlattice layer consisting of ln1→.z. y2Gax2Alv2N and ln x3.y3Gax3Aly3N, where the lattice constant of said ln1.x?.v2Ga>:2Aly2N is larger than that of said In^^Ga^Al^N, and the lattice constant of said ln1.x3. y3Ga,.3Aly3N is smaller than that of In^.^Ga^AI^N, are successively formed one upon each other, whrerein x1 , x2, and x3 define the GaN mole fraction and y1 , y2, and y3
25 define the AIN mole fraction and the effective bandgap of said superlattice layer is larger than that of In^.^Ga^AI^N layer.
9 A transistor device comprising a first conductivity type of superlattice collector layer consisting of
30 ln,.x 1Gax1Aly1N and .^Ga^AI^N, an opposite conductivity type of ln,.x3 γJGax3Aly3N base layer, a first conductivity type of type of superlattice ln,.x l.y tGaxlAlvlN and In ,.x2.y2Gax2Alγ2N emitter iayer, wherein the lattice constant of said In l x.. y2Gax2Alv?N is larger than that of said In, x3.y:iGax3Aly;!N base layer, and the lattice constant of said inι-X2-y2Gax2Aly2N is smaller than that of said ln,.J( .y3Ga1(3Aly-,N base layer, al!
35 successively formed one upon the other, wherein the bandgap of said li".,.XJ v.,Ga)t;jAly3N base layer is smaller than the effective bandgap of In , ,, v lGax,A! :N and l 1.x2-y2GaxVAly7N superlattice layers, and x1. x2. and x3 define the GaN mole
PCT/IB2000/000892 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication WO2000058999A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000608410A JP2002540618A (en) 1999-03-26 2000-03-01 Semiconductor structure having strain compensation layer and manufacturing method
EP00940681A EP1183761A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27731999A 1999-03-26 1999-03-26
US09/277,319 1999-03-26

Publications (4)

Publication Number Publication Date
WO2000058999A2 WO2000058999A2 (en) 2000-10-05
WO2000058999A3 WO2000058999A3 (en) 2001-01-04
WO2000058999B1 true WO2000058999B1 (en) 2001-08-02
WO2000058999A9 WO2000058999A9 (en) 2002-08-29

Family

ID=23060339

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000892 WO2000058999A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Country Status (4)

Country Link
EP (1) EP1183761A2 (en)
JP (1) JP2002540618A (en)
CN (1) CN1347581A (en)
WO (1) WO2000058999A2 (en)

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US11329191B1 (en) 2015-06-05 2022-05-10 Ostendo Technologies, Inc. Light emitting structures with multiple uniformly populated active layers

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Also Published As

Publication number Publication date
WO2000058999A9 (en) 2002-08-29
WO2000058999A2 (en) 2000-10-05
EP1183761A2 (en) 2002-03-06
JP2002540618A (en) 2002-11-26
WO2000058999A3 (en) 2001-01-04
CN1347581A (en) 2002-05-01

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