KR950032700A - 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟 - Google Patents
투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟 Download PDFInfo
- Publication number
- KR950032700A KR950032700A KR1019950004372A KR19950004372A KR950032700A KR 950032700 A KR950032700 A KR 950032700A KR 1019950004372 A KR1019950004372 A KR 1019950004372A KR 19950004372 A KR19950004372 A KR 19950004372A KR 950032700 A KR950032700 A KR 950032700A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- tin oxide
- indium oxide
- conductive film
- transparent conductive
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟으로서, 부분적으로 환원된 산화 인듐-산화 주석 분말 혼합물 또는 부분적으로 환원된 공 침전된 산화인듐-산화주석 분말로 제조되는 타겟에 있서, 매우 높은 기계적 강도를 가진 타겟은 산화물 세라믹 매트릭스로 이루어지고, 50㎛이하의 크기를 가진 In 및 Sn으로된 금속상 성분내로, 균일하게 그리고 미세하게 분포되는 방식으로 삽입되며, 완전 산화된 산화인듐/산화주석의 이론 밀도의 96%이상의 밀도를 갖는다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟으로서, 부분적으로 환원된 산화 인듐-산화 주석 분말 혼합물 또는 부분적으로 환원된 공 침전된 산화인듐-산화주석 분말로 제조되는 타겟에 있어서, 타겟이 산화물 세라믹 매트릭스로 이루어지고 50㎛이하의 크기를 가진 In 및 또는 Sn으로 된 금속상 성분내로 균일하게 그리고 미세하게 분포되는 방식으로 삽입되며, 완전산화된 산화 인듐/산화 주석의 이론 밀도의 96% 이상의 밀도를 가지는 것을 특징으로 하는 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟.
- 제1항에 있어서, 금속 상의 많은 양이 10㎛ 이하인 것을 특징으로 하는 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟.
- 제1항 및 제2항에 있어서, 타겟 재료의 피열인성이 1.5MParm 이상인 것을 특징으로 하는 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟.
- 산화인듐-산화주석 분말 혼합물 또는 적합하게 공침전된 산화 인듐-산화 주석 분말을 1000℃이하의 온도로 환원된 가스 분위기에서 어닐링 처리함으로써, 50㎛이하의 크기를 가진, 균일한 방식으로 미세하게 분포된 금속 상을 형성하고, 이렇게 얻어진 분말을 금속상의 용융점 이상의 온도로 고온 등압 압축 성형에 의해 치밀화 시키는 것을 특징으로 한는 제1, 2 또는 3항에 따른 스퍼터링 타겟의 제조 방법.
- 제4항에 있어서, 환원어닐링시 형성되는 금속상의 대부분이 10㎛이하의 크기를 갖는 것을 특징으로 하는 스퍼터링 타겟의 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4407774.2 | 1994-03-09 | ||
DE4407774A DE4407774C1 (de) | 1994-03-09 | 1994-03-09 | Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950032700A true KR950032700A (ko) | 1995-12-22 |
KR100260337B1 KR100260337B1 (ko) | 2000-07-01 |
Family
ID=6512207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950004372A KR100260337B1 (ko) | 1994-03-09 | 1995-03-03 | 투명한 도전막을 제조하기 위한 캐소드 스퍼터링용 타겟과 이 타겟의 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5480532A (ko) |
EP (1) | EP0671480B1 (ko) |
JP (1) | JP3777468B2 (ko) |
KR (1) | KR100260337B1 (ko) |
CN (1) | CN1050864C (ko) |
DE (2) | DE4407774C1 (ko) |
TW (1) | TW268975B (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4438323C1 (de) * | 1994-10-27 | 1995-07-27 | Leybold Materials Gmbh | Verfahren zum Recyceln von abgesputterten Indiumoxid-Zinnoxid-Targets |
DE19508898A1 (de) | 1995-03-11 | 1996-09-12 | Leybold Materials Gmbh | Indiumoxid/Zinnoxid Sputtertarget für die Kathodenzerstäubung |
EP0761838B1 (de) * | 1995-08-18 | 2001-08-08 | W.C. Heraeus GmbH & Co. KG | Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets |
DE19540379C1 (de) * | 1995-08-18 | 1996-09-26 | Heraeus Gmbh W C | Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets |
US6123787A (en) * | 1995-08-31 | 2000-09-26 | Innovative Sputtering Technology | Process for manufacturing ITO alloy articles |
US5866493A (en) * | 1995-11-30 | 1999-02-02 | Korea Academy Of Industrial Technology | Method of manufacturing a sintered body of indium tin oxide |
DE19626732B4 (de) * | 1996-07-03 | 2009-01-29 | W.C. Heraeus Gmbh | Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets |
JP3781878B2 (ja) * | 1996-10-04 | 2006-05-31 | 同和鉱業株式会社 | Ito焼結体およびitoスパッタリングターゲット |
JP3862385B2 (ja) * | 1996-11-08 | 2006-12-27 | Dowaホールディングス株式会社 | 酸化スズ含有酸化インジウム粉及び焼結体の製造方法 |
CN1120899C (zh) * | 1997-11-27 | 2003-09-10 | 中南工业大学 | 制造氧化铟/氧化锡溅射靶材的方法 |
JP2972996B2 (ja) * | 1997-12-02 | 1999-11-08 | 三井金属鉱業株式会社 | Ito微粉末及びその製造方法 |
US5942148A (en) * | 1997-12-24 | 1999-08-24 | Preston; Kenneth G. | Nitride compacts |
US6183686B1 (en) | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
DE10017414A1 (de) * | 2000-04-07 | 2001-10-11 | Unaxis Materials Deutschland G | Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung |
JP3585033B2 (ja) * | 2000-04-29 | 2004-11-04 | 喜萬 中山 | カーボンナノコイル生成用のインジウム・スズ・鉄系触媒の製造方法 |
KR100909315B1 (ko) * | 2001-08-02 | 2009-07-24 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 투명 전도막 및 이들의 제조방법 |
US20080210555A1 (en) * | 2007-03-01 | 2008-09-04 | Heraeus Inc. | High density ceramic and cermet sputtering targets by microwave sintering |
US20110100809A1 (en) * | 2008-07-08 | 2011-05-05 | Bekaert Advanced Coatings | Method to manufacture an oxide sputter target comprising a first and second phase |
SG174652A1 (en) | 2010-03-31 | 2011-10-28 | Heraeus Gmbh W C | Composition of sputtering target, sputtering target, and method of producing the same |
WO2014023614A1 (en) * | 2012-08-08 | 2014-02-13 | Umicore | Ito ceramic sputtering targets with reduced in2o3 contents and method of producing it |
DE102016106370A1 (de) * | 2016-03-23 | 2017-09-28 | Degudent Gmbh | Verfahren zur Herstellung eines eingefärbten Rohlings sowie Rohling |
US11274363B2 (en) * | 2019-04-22 | 2022-03-15 | Nxp Usa, Inc. | Method of forming a sputtering target |
CN111116194B (zh) * | 2019-12-19 | 2022-03-25 | 广西晶联光电材料有限责任公司 | 一种超高密度细晶ito靶材的生产方法 |
CN112592173A (zh) * | 2020-12-15 | 2021-04-02 | 株洲火炬安泰新材料有限公司 | 一种ito烧结靶材的制备方法 |
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JPS5889666A (ja) * | 1981-11-25 | 1983-05-28 | Alps Electric Co Ltd | 透明導電性被膜形成用ペ−スト及びその製造方法 |
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DE4124471C1 (en) * | 1991-07-24 | 1992-06-11 | Degussa Ag, 6000 Frankfurt, De | Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas |
JPH05247636A (ja) * | 1992-03-06 | 1993-09-24 | Hitachi Metals Ltd | インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法 |
JPH05311422A (ja) * | 1992-05-08 | 1993-11-22 | Hitachi Metals Ltd | Itoスパッタリングターゲットの製造方法 |
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EP0584672B1 (en) * | 1992-08-19 | 1996-06-12 | Tosoh Corporation | Method of manufacturing an indium oxide powder useful as material of a high-density ITO sintered body |
US5433901A (en) * | 1993-02-11 | 1995-07-18 | Vesuvius Crucible Company | Method of manufacturing an ITO sintered body |
-
1994
- 1994-03-09 DE DE4407774A patent/DE4407774C1/de not_active Expired - Fee Related
- 1994-07-30 DE DE59400597T patent/DE59400597D1/de not_active Expired - Fee Related
- 1994-07-30 EP EP94111923A patent/EP0671480B1/de not_active Expired - Lifetime
- 1994-10-29 TW TW083110029A patent/TW268975B/zh active
- 1994-11-09 US US08/336,769 patent/US5480532A/en not_active Expired - Lifetime
-
1995
- 1995-03-03 CN CN95102479A patent/CN1050864C/zh not_active Expired - Fee Related
- 1995-03-03 KR KR1019950004372A patent/KR100260337B1/ko not_active IP Right Cessation
- 1995-03-09 JP JP05013095A patent/JP3777468B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0841634A (ja) | 1996-02-13 |
TW268975B (ko) | 1996-01-21 |
JP3777468B2 (ja) | 2006-05-24 |
CN1050864C (zh) | 2000-03-29 |
CN1110994A (zh) | 1995-11-01 |
KR100260337B1 (ko) | 2000-07-01 |
EP0671480A1 (de) | 1995-09-13 |
DE59400597D1 (de) | 1996-10-10 |
EP0671480B1 (de) | 1996-09-04 |
DE4407774C1 (de) | 1995-04-20 |
US5480532A (en) | 1996-01-02 |
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