KR950019953A - 투영노광장치 - Google Patents
투영노광장치 Download PDFInfo
- Publication number
- KR950019953A KR950019953A KR1019940035903A KR19940035903A KR950019953A KR 950019953 A KR950019953 A KR 950019953A KR 1019940035903 A KR1019940035903 A KR 1019940035903A KR 19940035903 A KR19940035903 A KR 19940035903A KR 950019953 A KR950019953 A KR 950019953A
- Authority
- KR
- South Korea
- Prior art keywords
- optical system
- projection
- optical
- exposure apparatus
- projection exposure
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/06—Simple or compound lenses with non-spherical faces with cylindrical or toric faces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
- F21W2131/103—Outdoor lighting of streets or roads
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Abstract
본 발명은 투영광학계에서 잔존하고 투영 광학계의 광축에 대하여 회전 비대칭인 광학적 특성을 조정할 수 있는 내구성 및 재생성이 우수한 고성능 투영 노광 장치에 관한 것이다.본 발명의 투영 노광장치는 조명 광학계, 투영광학계 및 광학 수단으로 이루어진다. 조명 광학계는 제1물체를 조명하고 투영 광학계는 제1물체의 상을 소정의 배율로 제2물체에 투영한다. 광학 수단은 제1물체와 제2물체 사이에 배치되며 투영 광학계의 광축에 대하여 회전 비대칭 파워를 갖는다. 결과적으로 광학 수단은 투영광학계에 잔존하는, 투영광학계의 광축에 대하여 회전 광학 특성을 조정할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제12도는 본 발명에 의한 실시예의 전체구성을 나타내는 도면이다.
Claims (16)
- 제1물체를 조명하는 조명 광학계;상기 조명 광학계에 의해 조명된 상기 제1물체의 상을 소정의 배율하에서 제2물체에 투영하는 투영 광학계;및 상기 제1물체와 상기 제2물체 사이에 배치되어 상기 투영 광학계의 광축에 대하여 회전 비대칭의 파워를 지니고, 상기 투영광학계에 잔존하는 상기 투영 광학계의 광축에 대해 회전 비대칭의 광학 특성을 보정하기 위한 광학 수단으로 이루어짐을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 광학 수단이 상기 투영 광학계의 광측 주위를 회전할 수 있도록 배치됨을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 광학 수단이 상기 투영 광학계의 광측을 따라 이동할 수 있도록 배치됨을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 광학 수단이 직각인 방향으로 상이한 파워를 갖는 토릭형 광학 부재로 이루어짐을 특징으로 하는 투영 노광 장치.
- 제4항에 있어서, 토릭형 광학 부재가 수직인 방향으로 상이한 파워를 갖는 제1및 제2토릭형 광학소자로 이루어지며, 상기 제1및 제2토릭형 광학소자는 상기 투영 광학계의 광축 주위를 서로 회전할수 있도록 배열됨을 특징으로 하는 투영 노광 장치.
- 제4항에 있어서, 토릭형 광학 부재가 수직인 방향으로 상이한 파워를 갖는 제1및 제2토릭형 광학소자로 이루어지며, 상기 제1및 제2토릭형 광학소자는 상기 투영 광학계의 광축을 따라 서로 이동할 수 있도록 배열됨을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 광학 수단이 상기 제1및 제2 투영광학계 사이, 상기 투영 광학계 내부, 또는 상기 투영광학계와 상기 제2물체 사이에 배치됨을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 광학 수단이 상기 투영 광학계의 동공면 또는 그 근처에 배치됨을 특징으로 하는 투영 노광 장치.
- 제4항에 있어서, 제1물체가 투영된 패턴이 그위에 형성되는 레티클임을 특징으로 하는 투영 노광 장치.
- 제1항에 있어서, 제2물체가 반도체 웨이퍼임을 특징으로 하는 투영 노광 장치.
- 제1물체를 조명하는 조명 광학계; 및 상기 조명 광학계에 의해 조명된 상기 제1물체의 상을 소정의 배율하에서 제2물체에 투영하는 투영 광학계로 이루어진 투영 노광 장치에 있어서, 상기 투영 광학계가 표면이 상기 투영 광학계의 결상 성능에 기여하는 렌즈로 이루어지며,상기 투영 광학계의 광축에 대하여 회전 비대칭 광학 특성을 보정하기 위한, 상기 투영 광학계의 광축에 대하여 회전 비대칭 파워를 갖는 회전 비대칭 영역을 가짐을 특징으로 하는 투영 노광 장치.
- 제11항에 있어서, 렌즈가 상기 투영 광학계의 광축 주위를 회전할 수 있도록 배열됨을 특징으로 하는 투영 노광 장치.
- 제11항에 있어서, 렌즈가 상기 투영 광학계의 광축을 따라서 이동할 수 있돌고 배열됨을 특징으로 하는 투영 노광 장치.
- 제11항에 있어서, 렌즈가 직각인 방향으로 각각 상이한 파워를 갖는 제1및 제2렌즈 소자로 이루어짐을 특징으로 하는 투영 노광 장치.
- 제11항에 있어서, 제1물체가 투영되는 패턴이 그위에 형성되는 레티클임을 특징으로 하는 투영 노광 장치.
- 제11항에 있어서, 제2물체가 반도체 웨이퍼임을 특징으로 하는 투영 노광 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020044967A KR100422824B1 (ko) | 1993-12-22 | 2002-07-30 | 전사방법 및 노광방법 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP323721/1993 | 1993-12-22 | ||
JP93-323721 | 1993-12-22 | ||
JP32372193A JP3341269B2 (ja) | 1993-12-22 | 1993-12-22 | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020044967A Division KR100422824B1 (ko) | 1993-12-22 | 2002-07-30 | 전사방법 및 노광방법 |
KR1020020044969A Division KR100508215B1 (ko) | 1993-12-22 | 2002-07-30 | 보정부재 및 보정부재의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950019953A true KR950019953A (ko) | 1995-07-24 |
KR100396872B1 KR100396872B1 (ko) | 2004-05-17 |
Family
ID=18157870
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035903A KR100396872B1 (ko) | 1993-12-22 | 1994-12-22 | 투영노광장치 |
KR1020020044967A KR100422824B1 (ko) | 1993-12-22 | 2002-07-30 | 전사방법 및 노광방법 |
KR1020020044969A KR100508215B1 (ko) | 1993-12-22 | 2002-07-30 | 보정부재 및 보정부재의 제조방법 |
KR1020030066105A KR100487003B1 (ko) | 1993-12-22 | 2003-09-24 | 투영노광장치 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020044967A KR100422824B1 (ko) | 1993-12-22 | 2002-07-30 | 전사방법 및 노광방법 |
KR1020020044969A KR100508215B1 (ko) | 1993-12-22 | 2002-07-30 | 보정부재 및 보정부재의 제조방법 |
KR1020030066105A KR100487003B1 (ko) | 1993-12-22 | 2003-09-24 | 투영노광장치 |
Country Status (5)
Country | Link |
---|---|
US (3) | US6262793B1 (ko) |
EP (1) | EP0660169B1 (ko) |
JP (1) | JP3341269B2 (ko) |
KR (4) | KR100396872B1 (ko) |
DE (1) | DE69424138T2 (ko) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3341269B2 (ja) | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
US6333776B1 (en) | 1994-03-29 | 2001-12-25 | Nikon Corporation | Projection exposure apparatus |
JP3893626B2 (ja) * | 1995-01-25 | 2007-03-14 | 株式会社ニコン | 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法 |
JPH08327895A (ja) * | 1995-05-26 | 1996-12-13 | Nikon Corp | 投影光学装置 |
DE69728126T2 (de) * | 1996-12-28 | 2005-01-20 | Canon K.K. | Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
US6522386B1 (en) * | 1997-07-24 | 2003-02-18 | Nikon Corporation | Exposure apparatus having projection optical system with aberration correction element |
DE19827603A1 (de) | 1998-06-20 | 1999-12-23 | Zeiss Carl Fa | Optisches System, insbesondere Projektions-Belichtungsanlage der Mikrolithographie |
JP3459773B2 (ja) | 1998-06-24 | 2003-10-27 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
JP3862446B2 (ja) * | 1998-10-02 | 2006-12-27 | キヤノン株式会社 | 結像レンズ及びそれを用いた画像読取装置 |
US6924937B2 (en) | 1998-11-16 | 2005-08-02 | Canon Kabushiki Kaisha | Aberration correcting optical system |
JP3239881B2 (ja) * | 1998-11-16 | 2001-12-17 | キヤノン株式会社 | 光学系及びそれを用いた投影装置 |
DE19859634A1 (de) * | 1998-12-23 | 2000-06-29 | Zeiss Carl Fa | Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie |
EP1022617A3 (en) * | 1999-01-20 | 2003-01-02 | ASML Netherlands B.V. | Optical correction plate, and its application in a lithographic projection apparatus |
US6373552B1 (en) * | 1999-01-20 | 2002-04-16 | Asm Lithography B.V. | Optical correction plate, and its application in a lithographic projection apparatus |
JP3548464B2 (ja) | 1999-09-01 | 2004-07-28 | キヤノン株式会社 | 露光方法及び走査型露光装置 |
US6710930B2 (en) | 1999-12-01 | 2004-03-23 | Nikon Corporation | Illumination optical system and method of making exposure apparatus |
JP2002175964A (ja) * | 2000-12-06 | 2002-06-21 | Nikon Corp | 観察装置およびその製造方法、露光装置、並びにマイクロデバイスの製造方法 |
JP2002184667A (ja) | 2000-12-14 | 2002-06-28 | Nikon Corp | 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法 |
US20040042094A1 (en) * | 2000-12-28 | 2004-03-04 | Tomoyuki Matsuyama | Projection optical system and production method therefor, exposure system and production method therefor, and production method for microdevice |
US6768539B2 (en) * | 2001-01-15 | 2004-07-27 | Asml Netherlands B.V. | Lithographic apparatus |
JP2002287023A (ja) | 2001-03-27 | 2002-10-03 | Nikon Corp | 投影光学系、該投影光学系を備えた投影露光装置及び投影露光方法 |
US6937394B2 (en) | 2001-04-10 | 2005-08-30 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Device and method for changing the stress-induced birefringence and/or the thickness of an optical component |
US6525805B2 (en) * | 2001-05-14 | 2003-02-25 | Ultratech Stepper, Inc. | Backside alignment system and method |
JP3977038B2 (ja) | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
US20030081276A1 (en) * | 2001-10-29 | 2003-05-01 | Jen-Shou Tseng | Method for scanning selected target image area of document |
TWI267708B (en) * | 2001-11-21 | 2006-12-01 | Adtec Eng Co Ltd | Optical magnification adjustment system and projection exposure device |
JP2003303751A (ja) * | 2002-04-05 | 2003-10-24 | Canon Inc | 投影光学系、該投影光学系を有する露光装置及び方法 |
JP4289914B2 (ja) * | 2002-05-07 | 2009-07-01 | キヤノン株式会社 | 結像光学系及びそれを用いた画像読取装置 |
JP4005881B2 (ja) * | 2002-08-30 | 2007-11-14 | 株式会社東芝 | 露光装置の検査方法 |
DE10328938A1 (de) * | 2003-06-27 | 2005-01-20 | Carl Zeiss Smt Ag | Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie |
JP2005049726A (ja) | 2003-07-31 | 2005-02-24 | Olympus Corp | 光学システムの心立ち調整方法及びその調整システム |
US7388895B2 (en) * | 2003-11-21 | 2008-06-17 | Tsinghua University | Corner-pumping method and gain module for high power slab laser |
US7277231B2 (en) | 2004-04-02 | 2007-10-02 | Carl Zeiss Smt Ag | Projection objective of a microlithographic exposure apparatus |
JP4547714B2 (ja) * | 2004-05-19 | 2010-09-22 | 株式会社ニコン | 投影光学系、露光装置、および露光方法 |
DE602005008591D1 (de) * | 2004-06-10 | 2008-09-11 | Zeiss Carl Smt Ag | Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung |
JP4833211B2 (ja) | 2004-08-06 | 2011-12-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の投影対物レンズ |
WO2006053751A2 (de) | 2004-11-18 | 2006-05-26 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage |
US8009271B2 (en) * | 2004-12-16 | 2011-08-30 | Nikon Corporation | Projection optical system, exposure apparatus, exposure system, and exposure method |
JP4419900B2 (ja) * | 2005-04-08 | 2010-02-24 | ウシオ電機株式会社 | 露光装置 |
EP1746463A2 (de) | 2005-07-01 | 2007-01-24 | Carl Zeiss SMT AG | Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv |
KR100712997B1 (ko) * | 2005-09-30 | 2007-05-02 | 주식회사 하이닉스반도체 | 수직 및 수평 임계치수 차이를 조절하기 위한 노광시스템및 이를 이용한 노광방법 |
EP1953805A4 (en) * | 2005-11-10 | 2010-03-31 | Nikon Corp | OPTICAL LIGHTING SYSTEM, EXPOSURE SYSTEM AND EXPOSURE METHOD |
US7372633B2 (en) * | 2006-07-18 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus, aberration correction device and device manufacturing method |
DE102006045075A1 (de) | 2006-09-21 | 2008-04-03 | Carl Zeiss Smt Ag | Steuerbares optisches Element |
JP2010506388A (ja) * | 2006-10-02 | 2010-02-25 | カール・ツァイス・エスエムティー・アーゲー | 光学システムの結像特性を改善する方法及びその光学システム |
DE102007062265A1 (de) | 2006-12-29 | 2008-07-03 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Lithographie |
JP4515473B2 (ja) * | 2007-02-15 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE102007022895B9 (de) * | 2007-05-14 | 2013-11-21 | Erich Thallner | Vorrichtung zum Übertragen von in einer Maske vorgesehenen Strukturen auf ein Substrat |
US20080297912A1 (en) * | 2007-06-01 | 2008-12-04 | Electro Scientific Industries, Inc., An Oregon Corporation | Vario-astigmatic beam expander |
DE102008040218A1 (de) | 2007-07-11 | 2009-01-15 | Carl Zeiss Smt Ag | Drehbares optisches Element |
DE102008040181A1 (de) | 2007-07-27 | 2009-01-29 | Carl Zeiss | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage |
EP2188673A1 (en) | 2007-08-03 | 2010-05-26 | Carl Zeiss SMT AG | Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate |
EP2181357A1 (en) | 2007-08-24 | 2010-05-05 | Carl Zeiss SMT AG | Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography |
ES2337970B1 (es) * | 2007-09-26 | 2011-05-27 | Indizen Optical Technologies, S.L. | Lentes oftalmicas monofocales con superficies esfericas y/o asfericascombinadas. |
WO2009053001A1 (de) | 2007-10-19 | 2009-04-30 | Carl Zeiss Smt Ag | Optische vorrichtung mit verbessertem abbildungsverhalten sowie verfahren dazu |
NL1036108A1 (nl) | 2007-11-09 | 2009-05-12 | Asml Netherlands Bv | Device Manufacturing Method and Lithographic Apparatus, and Computer Program Product. |
KR100983582B1 (ko) * | 2007-12-31 | 2010-10-11 | 엘지디스플레이 주식회사 | 노광 장치 및 노광 방법과 그 노광 장치를 이용한 박막패터닝 방법 |
DE102009011207A1 (de) | 2008-03-26 | 2009-10-01 | Carl Zeiss Smt Ag | Verfahren und Beleuchtungssystem zum Beleuchten einer Maske in einer mikrolithographischen Projektionsbelichtungsanlage |
DE102008001892A1 (de) | 2008-05-21 | 2009-11-26 | Carl Zeiss Smt Ag | Optisches System für die Mikrolithographie |
JP2010039347A (ja) * | 2008-08-07 | 2010-02-18 | Mejiro Precision:Kk | 投影露光装置 |
US8553207B2 (en) * | 2008-12-31 | 2013-10-08 | Asml Holdings N.V. | Optically compensated unidirectional reticle bender |
EP2219077A1 (en) | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
KR200453054Y1 (ko) * | 2009-02-24 | 2011-04-12 | 주식회사 세이프로드 | 승하강식 볼라드 |
WO2012021311A2 (en) * | 2010-08-08 | 2012-02-16 | Kla-Tencor Corporation | Dynamic wavefront control of a frequency converted laser system |
DE102011080437A1 (de) | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Abbildendes optisches System für die Mikrolithographie |
JP6410406B2 (ja) * | 2012-11-16 | 2018-10-24 | キヤノン株式会社 | 投影光学系、露光装置および物品の製造方法 |
JP2014120682A (ja) * | 2012-12-18 | 2014-06-30 | Canon Inc | 露光装置、露光方法及びデバイス製造方法 |
US9606801B2 (en) * | 2013-09-06 | 2017-03-28 | Huawei Technologies Co., Ltd. | Method and apparatus for asynchronous processor based on clock delay adjustment |
CN104122669B (zh) * | 2014-08-07 | 2016-08-10 | 张家港鹏博光电科技有限公司 | 一种对称式双远心投影光学***和光刻设备 |
DE102015115555B4 (de) * | 2015-09-15 | 2022-07-07 | SMR Patents S.à.r.l. | Beleuchtungseinrichtung, Rückblickvorrichtung, Fußraumvorrichtung und Fahrzeug |
NL2021608A (en) * | 2017-09-20 | 2019-03-26 | Asml Netherlands Bv | Control system for a lithographic apparatus |
CN113219628B (zh) * | 2021-04-19 | 2023-12-15 | 江西欧菲光学有限公司 | 光学***、取像模组及电子设备 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1797071A1 (de) | 1968-08-09 | 1971-07-01 | Zeiss Carl Fa | Geraet zur Augenglasbestimmung |
US3583790A (en) * | 1968-11-07 | 1971-06-08 | Polaroid Corp | Variable power, analytic function, optical component in the form of a pair of laterally adjustable plates having shaped surfaces, and optical systems including such components |
US4259004A (en) * | 1979-06-13 | 1981-03-31 | Canon Kabushiki Kaisha | Scanning device with optical path length compensator |
JPS59144127A (ja) | 1983-02-07 | 1984-08-18 | Canon Inc | 像調整された光学装置 |
US4871237A (en) * | 1983-07-27 | 1989-10-03 | Nikon Corporation | Method and apparatus for adjusting imaging performance of projection optical apparatus |
US4666273A (en) * | 1983-10-05 | 1987-05-19 | Nippon Kogaku K. K. | Automatic magnification correcting system in a projection optical apparatus |
DE3443856A1 (de) | 1983-12-02 | 1985-06-13 | Nippon Kogaku K.K., Tokio/Tokyo | Optisches projektionsgeraet |
JPS60163046A (ja) * | 1984-02-03 | 1985-08-24 | Nippon Kogaku Kk <Nikon> | 投影露光光学装置及び投影露光方法 |
US4801808A (en) | 1984-07-27 | 1989-01-31 | Canon Kabushiki Kaisha | Alignment and exposure apparatus having an objective lens system capable of observing a mark on an exposure optical holding member to permit alignment of a mask relative to the exposure optical system |
JPS61254915A (ja) | 1985-05-03 | 1986-11-12 | Canon Inc | 光束径調整用の光学系 |
JPS6235620A (ja) | 1985-08-09 | 1987-02-16 | Canon Inc | 光学倍率補正装置 |
JPS6235619A (ja) | 1985-08-09 | 1987-02-16 | Canon Inc | 投影露光装置 |
US4888614A (en) * | 1986-05-30 | 1989-12-19 | Canon Kabushiki Kaisha | Observation system for a projection exposure apparatus |
JPS636553A (ja) | 1986-06-27 | 1988-01-12 | Canon Inc | レチクルの塵埃付着防止方法 |
JPS6350810A (ja) * | 1986-08-21 | 1988-03-03 | Seiko Epson Corp | 光走査装置 |
JPH0821531B2 (ja) * | 1986-08-29 | 1996-03-04 | 株式会社ニコン | 投影光学装置 |
JPS63185024A (ja) | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | 露光装置 |
JPS63232320A (ja) | 1987-03-20 | 1988-09-28 | Hitachi Ltd | パタ−ン露光装置 |
US4943733A (en) | 1987-05-15 | 1990-07-24 | Nikon Corporation | Projection optical apparatus capable of measurement and compensation of distortion affecting reticle/wafer alignment |
JPS6474547A (en) | 1987-09-14 | 1989-03-20 | Motorola Inc | Manufacture of semiconductor for compensating strain between pattern on semiconductor body and mask for obtaining pattern |
JPH01262513A (ja) * | 1988-04-13 | 1989-10-19 | Ricoh Co Ltd | 複写用可変焦点レンズ |
US5105075A (en) | 1988-09-19 | 1992-04-14 | Canon Kabushiki Kaisha | Projection exposure apparatus |
JP2679195B2 (ja) * | 1988-12-21 | 1997-11-19 | 株式会社ニコン | 投影露光装置 |
US5231431A (en) | 1989-11-29 | 1993-07-27 | Canon Kabushiki Kaisha | Projection type display apparatus |
US5095386A (en) * | 1990-05-01 | 1992-03-10 | Charles Lescrenier | Optical system for generating lines of light using crossed cylindrical lenses |
US5117255A (en) * | 1990-09-19 | 1992-05-26 | Nikon Corporation | Projection exposure apparatus |
US5367406A (en) | 1990-10-16 | 1994-11-22 | Asahi Kogaku Kogyo Kabushiki Kaisha | Optical device with inherent focusing error correction |
JP3041939B2 (ja) | 1990-10-22 | 2000-05-15 | 株式会社ニコン | 投影レンズ系 |
JPH04355419A (ja) | 1991-05-31 | 1992-12-09 | Asahi Optical Co Ltd | 対物レンズ |
US5424552A (en) | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
EP0523033A1 (de) * | 1991-07-10 | 1993-01-13 | IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. | Ionenoptisches Abbildungssystem |
US6078380A (en) * | 1991-10-08 | 2000-06-20 | Nikon Corporation | Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure |
JP3298131B2 (ja) | 1991-10-24 | 2002-07-02 | 株式会社ニコン | 縮小投影レンズ |
US5309198A (en) * | 1992-02-25 | 1994-05-03 | Nikon Corporation | Light exposure system |
JPH0754794B2 (ja) | 1992-04-27 | 1995-06-07 | 株式会社ニコン | 投影型露光装置 |
US5459577A (en) | 1992-06-01 | 1995-10-17 | Nikon Corporation | Method of and apparatus for measuring pattern positions |
US5308991A (en) | 1992-06-02 | 1994-05-03 | National Semiconductor Corporation | Method and apparatus for making a predistorted reticle to compensate for lens distortions |
JPH065490A (ja) | 1992-06-17 | 1994-01-14 | Nikon Corp | 投影露光装置 |
JP3037040B2 (ja) | 1993-01-20 | 2000-04-24 | 日本電気株式会社 | 露光装置 |
US5581324A (en) | 1993-06-10 | 1996-12-03 | Nikon Corporation | Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors |
JP3374991B2 (ja) | 1993-06-14 | 2003-02-10 | 株式会社ニコン | 投影光学系の調整方法、露光方法、及び露光装置 |
US5392119A (en) | 1993-07-13 | 1995-02-21 | Litel Instruments | Plate correction of imaging systems |
US5677757A (en) | 1994-03-29 | 1997-10-14 | Nikon Corporation | Projection exposure apparatus |
JP3341269B2 (ja) | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
-
1993
- 1993-12-22 JP JP32372193A patent/JP3341269B2/ja not_active Expired - Lifetime
-
1994
- 1994-12-21 US US08/360,515 patent/US6262793B1/en not_active Expired - Lifetime
- 1994-12-22 KR KR1019940035903A patent/KR100396872B1/ko not_active IP Right Cessation
- 1994-12-22 EP EP94120399A patent/EP0660169B1/en not_active Expired - Lifetime
- 1994-12-22 DE DE69424138T patent/DE69424138T2/de not_active Expired - Lifetime
-
2002
- 2002-01-02 US US10/032,462 patent/US20020054282A1/en not_active Abandoned
- 2002-07-30 KR KR1020020044967A patent/KR100422824B1/ko not_active IP Right Cessation
- 2002-07-30 KR KR1020020044969A patent/KR100508215B1/ko not_active IP Right Cessation
-
2003
- 2003-07-16 US US10/619,515 patent/US6958803B2/en not_active Expired - Fee Related
- 2003-09-24 KR KR1020030066105A patent/KR100487003B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3341269B2 (ja) | 2002-11-05 |
JPH07183190A (ja) | 1995-07-21 |
KR100487003B1 (ko) | 2005-05-04 |
KR100396872B1 (ko) | 2004-05-17 |
US20020054282A1 (en) | 2002-05-09 |
DE69424138D1 (de) | 2000-05-31 |
US6262793B1 (en) | 2001-07-17 |
EP0660169A1 (en) | 1995-06-28 |
EP0660169B1 (en) | 2000-04-26 |
US6958803B2 (en) | 2005-10-25 |
DE69424138T2 (de) | 2000-09-28 |
KR100422824B1 (ko) | 2004-03-16 |
KR100508215B1 (ko) | 2005-08-17 |
US20040046950A1 (en) | 2004-03-11 |
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