KR940020511A - 열처리장치(heat treatment apparatus) - Google Patents

열처리장치(heat treatment apparatus) Download PDF

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Publication number
KR940020511A
KR940020511A KR1019940002161A KR19940002161A KR940020511A KR 940020511 A KR940020511 A KR 940020511A KR 1019940002161 A KR1019940002161 A KR 1019940002161A KR 19940002161 A KR19940002161 A KR 19940002161A KR 940020511 A KR940020511 A KR 940020511A
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South Korea
Prior art keywords
carrier
heat treatment
wafer
treatment apparatus
workpiece
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KR1019940002161A
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English (en)
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KR100233310B1 (ko
Inventor
테쓰 오사와
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이노우에 아키라
도오교오 에레구토론 가부시끼 가이샤(Tokyo Electron Ltd.)
마쓰바 구니유키
도오교오 에레구토론 도오호쿠 가부시끼 가이샤(Tokyo Electron Tohoku Ltd.)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

반도체 웨이퍼 열처리장치에 있어서, 웨이퍼를 탑재한 웨이퍼보우트가 하방으로부터 로우딩되는 여러개의 즉, 2개의 열처리유니트가 옆으로 나란히 설치된다. 2개의 열처리 유니트의 각각에 대향해서, 웨이퍼 인도부가 설치되고, 각 웨이퍼 인도부와 각 열처리유니트와의 사이에서 웨이퍼 옮겨싣는 기구에 의해서 웨이퍼의 반송이 행하여진다. 양 웨이퍼 인도부에 대해서 공통으로 사용되도록, 상위 및 하위의 캐리어 수납선반이 2개의 열처리유니트에 걸쳐 설치된다. 웨이퍼 열처리장치의 앞면부에 있는 캐리어 스테이지와, 양 캐리어 수납 선반과, 양 웨이퍼 인도부와의 사이에서, 웨이퍼를 수용한 캐리어를 반송하기 위하여, 양 캐리어 수납 선반의 전방에 캐리어 옮겨싣는 기구가 설치된다. 캐리어 수납 선반, 캐리어 옮겨싣는 기구 및 캐리어 스테이지를 양 열처리유니트에 대해서 공통으로 사용하므로서, 단일의 열처리유니트당으로 보아 캐리어 수납양이 증가되고, 캐리어를 보다 유효하게 이용하며, 장치의 점유면적으로 줄일 수가 있다.

Description

열처리장치(HEAT TREATMENT APPARATUS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는, 제1도의 열처리장치 내부요소의 배치를 나타내는 측면도.

Claims (8)

  1. 세로형의 열처리로, 피처리체 지지보우트 및 피처리체 지지보우트를 열처리로에 대해서 로우딩 및 언로우딩하는 수단을 각각 가지며, 가로로 나란히 배치된 복수의 열처리유니트와, 이를 열처리 유니트에 대해서 캐리어 반송여역을 통해서 대향 배치되고, 복수의 피처리체를 수용한 피처리체 캐리어가 외부와의 사이에서 반출입되는 캐리어 인도수단과, 상기 캐리어 반송영역과 상기 열처리 유니트와의 사이에서, 복수의 열처리 유니트에 걸쳐 가로방향으로 배치된 캐리어 수납수단과, 상기 복수의 열처리유니트의 캐리어 반송영역의 옆에서 각각의 열처리 유니트에 대향해서 설치된 복수의 피처리체 인도수단과, 상기 캐리어 반송영역내에 이동가능하게 설치되고, 상기 캐리어 인도수단, 캐리어 수납수단 및 복수의 피처리체 인도수단사이에서 캐리어의 반송을 행하는 캐리어 옮겨싣기수단과, 상기 각 피처리체 인도부에 얹어놓인 캐리어와 각 열처리유니트의 피처리체 지지보우트와의 사이에서 피처리체의 반송을 행하는 피처리체 옮겨싣기수단을 갖추고, 상기 캐리어 수납수단 및 캐리어 옮겨싣기수단이 복수개의 열처리 유니트에 대해서 공용됨을 특징으로 하는 열처리장치.
  2. 제1항에 있어서, 상기 캐리어 수납수단이, 캐리어 인도수단보다 높은 위치에 있는 열처리장치.
  3. 제1항에 있어서, 상기 캐리어 수납수단이, 캐리어 인도수단보다 높은 위치에 있는 상기 캐리어 수납수단과, 캐리어 인도수단과 대략 같은 위치에 있는 하위의 캐리어 수납수단으로서 이루어지는 열처리장치.
  4. 제3항에 있어서, 상기 피처리체 옮겨싣기수단이, 상기 하위의 캐리어 수납수단과 인접하고 있는 열처리 장치.
  5. 제3항에 있어서, 상기 상위의 캐리어 수납수단이, 5열, 4단의 캐리어를 지지 가능한 캐리어 지지수단을 갖추고 있는 열처리장치.
  6. 제3항에 있어서, 상기 하위의 캐리어 수납수단이, 1열, 4단의 캐리어를 지지가능한 캐리어 지지수단을 갖추고 있는 열처리 장치.
  7. 제1항에 있어서, 상기 각 피처리체 인도수단이, 3단의 캐리어를 지지가능한 수단을 갖추고 있는 열처리장치.
  8. 제1항에 있어서, 상기 캐리어 옮겨싣기수단이, 모든 열처리유니트에 걸쳐 캐리어 반송영역 내에서 이동가능한 수직 방향 지주와, 지주를 따라서 승강 가능한 승강대와, 승강대에 지지되어, 캐리어를 지지해서 반송하기 위해 승강대에 대하여 수평면 내에서 변위 가능한 아암을 가지고 있는 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002161A 1993-02-08 1994-02-05 열처리장치 KR100233310B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04319993A JP3258748B2 (ja) 1993-02-08 1993-02-08 熱処理装置
JP93-43199 1993-02-08

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KR940020511A true KR940020511A (ko) 1994-09-16
KR100233310B1 KR100233310B1 (ko) 1999-12-01

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JP3258748B2 (ja) 2002-02-18
US5464313A (en) 1995-11-07
JPH06236854A (ja) 1994-08-23

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