KR920015464A - 반도체 장치의 전극배선층 및 그 제조방법 - Google Patents

반도체 장치의 전극배선층 및 그 제조방법 Download PDF

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Publication number
KR920015464A
KR920015464A KR1019910023199A KR910023199A KR920015464A KR 920015464 A KR920015464 A KR 920015464A KR 1019910023199 A KR1019910023199 A KR 1019910023199A KR 910023199 A KR910023199 A KR 910023199A KR 920015464 A KR920015464 A KR 920015464A
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South Korea
Prior art keywords
conductive layer
layer
insulating layer
semiconductor device
electrode wiring
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KR1019910023199A
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English (en)
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KR950001838B1 (ko
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돈시 하찌스가
기기 오꾸무라
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시기 모리야
미쓰비시뎅끼 가부시끼가이샤
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Publication of KR920015464A publication Critical patent/KR920015464A/ko
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Publication of KR950001838B1 publication Critical patent/KR950001838B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치의 전극배선층 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예의 DRAM의 메모리셀의 평면구조도. 제2도는 제1도중의 절단선 A-A에 따른 방향으로부터의 단면구조도. 제3도는 제1도중의 절단선 B-B에 따른 방향으로부터의 단면구조도.

Claims (2)

  1. 소정의 방향으로 뻗는 제1도전층과, 상기 제1도전층의 측면에 형성된 제2도전층과, 상기 제1도전층과 상기 제2도전층의상부표면을 덮는 상부절연층과, 상기 제2도전층의 측부표면을 덮는 측부절연층을 구비한, 반도체장치의 전극배선층.
  2. 절연층상에 제1도전층 및 제1절연층을 순차형성하는 공정과, 상기 제1도전층 및 상기 제1절연층을 소정의 형상으로 패터닝하는 공정과, 상기 제1도전층의 측벽에 제2의 도전층을 형성하는 공정과, 상기 제1절연층 및 상기 제2도전층의 표면상에 제2절연층을 형성하는 공정과, 상기 제2도전층을 에칭하여 상기 제2도전층의 측부표면상에 상기 제2절연층을 잔여시키는 공정과를 구비한, 반도체장치의 전극용 배선층의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023199A 1991-01-08 1991-12-17 반도체장치의 전극배선층 및 그 제조방법 KR950001838B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-719 1991-01-08
JP3000719A JPH04242938A (ja) 1991-01-08 1991-01-08 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR920015464A true KR920015464A (ko) 1992-08-26
KR950001838B1 KR950001838B1 (ko) 1995-03-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023199A KR950001838B1 (ko) 1991-01-08 1991-12-17 반도체장치의 전극배선층 및 그 제조방법

Country Status (4)

Country Link
US (2) US5502324A (ko)
JP (1) JPH04242938A (ko)
KR (1) KR950001838B1 (ko)
DE (1) DE4200284C2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640038A (en) * 1995-11-22 1997-06-17 Vlsi Technology, Inc. Integrated circuit structure with self-planarized layers
JP2765544B2 (ja) * 1995-12-26 1998-06-18 日本電気株式会社 半導体装置の製造方法
US5846873A (en) * 1996-02-02 1998-12-08 Micron Technology, Inc. Method of creating ultra-small nibble structures during mosfet fabrication
US5869391A (en) 1996-08-20 1999-02-09 Micron Technology, Inc. Semiconductor method of making electrical connection between an electrically conductive line and a node location, and integrated circuitry
US6486060B2 (en) * 1998-09-03 2002-11-26 Micron Technology, Inc. Low resistance semiconductor process and structures
US7119024B2 (en) * 2003-07-10 2006-10-10 Micron Technology, Inc. Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139418A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices and conductors therefor
JPH0616554B2 (ja) * 1984-05-09 1994-03-02 株式会社日立製作所 半導体装置の製造方法
FR2582446B1 (fr) * 1985-05-24 1987-07-17 Thomson Csf Dispositif semi-conducteur photosensible et procede de fabrication d'un tel procede
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
US4847674A (en) * 1987-03-10 1989-07-11 Advanced Micro Devices, Inc. High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
JPS63284857A (ja) * 1987-05-18 1988-11-22 Toshiba Corp 半導体装置及びその製造方法
KR910010167B1 (ko) * 1988-06-07 1991-12-17 삼성전자 주식회사 스택 캐패시터 dram셀 및 그의 제조방법
JPH0232544A (ja) * 1988-07-22 1990-02-02 Hitachi Ltd 半導体集積回路
JP2738542B2 (ja) * 1988-09-07 1998-04-08 富士通株式会社 コヒーレント光通信方式
US5113238A (en) * 1989-01-06 1992-05-12 Wang Chen Chin Contactless non-volatile memory array cells
JPH0734475B2 (ja) * 1989-03-10 1995-04-12 株式会社東芝 半導体装置
JPH02271628A (ja) * 1989-04-13 1990-11-06 Fujitsu Ltd 半導体装置
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
US5262343A (en) * 1991-04-12 1993-11-16 Micron Technology, Inc. DRAM stacked capacitor fabrication process

Also Published As

Publication number Publication date
US5627093A (en) 1997-05-06
US5502324A (en) 1996-03-26
KR950001838B1 (ko) 1995-03-03
DE4200284C2 (de) 1994-03-17
JPH04242938A (ja) 1992-08-31
DE4200284A1 (de) 1992-07-09

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