KR900005593A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR900005593A KR900005593A KR1019890013911A KR890013911A KR900005593A KR 900005593 A KR900005593 A KR 900005593A KR 1019890013911 A KR1019890013911 A KR 1019890013911A KR 890013911 A KR890013911 A KR 890013911A KR 900005593 A KR900005593 A KR 900005593A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- semiconductor substrate
- layer metal
- semiconductor device
- metal wirings
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체장치를 설명하기 위한 단면도.
제2도 및 제3도는 각각 본 발명의 1실시예에 따른 반도체 장치의 특성을 나타낸 단면도.
Claims (1)
- 반도체기판(1)과, 이 반도체기판(1)상에 형성된 제1층금속배선(3a~3c), 이 제1층금속배선(3a~3c)을 보호하기 위해 이 제1층금속배선(3a~3b)의 표면에 접하여 형성된 제1절연막(4), 상기 반도체기판(1)표면을 평탄화하기 위해 기판바이어스를 인가하는 방법에 의해 상기 제1절연막(4)상에 형성된 제2절연막(5), 이 제2절연막(5)상에 생산성을 향상시키기 위해 형성된 제3절연막(6)을 구비하여 구성된 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-241518 | 1988-09-27 | ||
JP63241518A JPH0289346A (ja) | 1988-09-27 | 1988-09-27 | 半導体装置及びその製造方法 |
JP63-241518 | 1988-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900005593A true KR900005593A (ko) | 1990-04-14 |
KR930004981B1 KR930004981B1 (ko) | 1993-06-11 |
Family
ID=17075537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890013911A KR930004981B1 (ko) | 1988-09-27 | 1989-09-27 | 반도체 장치 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0365854A3 (ko) |
JP (1) | JPH0289346A (ko) |
KR (1) | KR930004981B1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2252667A (en) * | 1990-10-08 | 1992-08-12 | Gold Star Electronics | Contact in DRAM device |
US5268333A (en) * | 1990-12-19 | 1993-12-07 | Samsung Electronics Co., Ltd. | Method of reflowing a semiconductor device |
JP3010824B2 (ja) * | 1991-09-17 | 2000-02-21 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
DE69531571T2 (de) * | 1994-05-27 | 2004-04-08 | Texas Instruments Inc., Dallas | Verbesserungen in Bezug auf Halbleitervorrichtungen |
JPH0855913A (ja) * | 1994-06-07 | 1996-02-27 | Texas Instr Inc <Ti> | サブミクロン相互接続の選択的空隙充填方法 |
JPH0855910A (ja) * | 1994-07-29 | 1996-02-27 | Texas Instr Inc <Ti> | 半導体装置の製造方法 |
JPH08162528A (ja) * | 1994-10-03 | 1996-06-21 | Sony Corp | 半導体装置の層間絶縁膜構造 |
JPH09321047A (ja) * | 1996-05-24 | 1997-12-12 | Nec Corp | 半導体装置の製造方法 |
JPH10163192A (ja) * | 1996-10-03 | 1998-06-19 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP2005101597A (ja) * | 2003-09-04 | 2005-04-14 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US20170066684A1 (en) * | 2015-09-08 | 2017-03-09 | Corning Incorporated | Optical coatings including buffer layers |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5289468A (en) * | 1976-01-21 | 1977-07-27 | Hitachi Ltd | Semiconductor device |
US4273805A (en) * | 1978-06-19 | 1981-06-16 | Rca Corporation | Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer |
JPS58197824A (ja) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | 半導体装置 |
JPS5957456A (ja) * | 1982-09-27 | 1984-04-03 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6185844A (ja) * | 1984-09-28 | 1986-05-01 | シーメンス、アクチエンゲゼルヤフト | 集積回路とその製法 |
US4723197A (en) * | 1985-12-16 | 1988-02-02 | National Semiconductor Corporation | Bonding pad interconnection structure |
JPH01138734A (ja) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | 複導電体層を有する半導体装置およびその製造方法 |
-
1988
- 1988-09-27 JP JP63241518A patent/JPH0289346A/ja active Granted
-
1989
- 1989-09-27 EP EP19890117848 patent/EP0365854A3/en not_active Ceased
- 1989-09-27 KR KR1019890013911A patent/KR930004981B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0576187B2 (ko) | 1993-10-22 |
KR930004981B1 (ko) | 1993-06-11 |
JPH0289346A (ja) | 1990-03-29 |
EP0365854A2 (en) | 1990-05-02 |
EP0365854A3 (en) | 1990-12-05 |
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