KR870001664A - 반도체 기억 장치 - Google Patents

반도체 기억 장치

Info

Publication number: KR870001664A
Authority: KR; South Korea
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1985-07-26

Application number

KR1019860005950A

Other languages

English (en)

Other versions

KR940011426B1 (ko

Inventor

가즈노리 후루사와

신지 나헤다니

요시아기 가미가기

마사아기 데라사와

Original Assignee

가부시기가이샤 히다찌세이사꾸쇼

히다찌초에루 에스 아이 엔지니어링 가부시기가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-07-26

Filing date

1986-07-22

Publication date

1987-03-17

1985-07-26 Priority claimed from JP60164099A external-priority patent/JPS6226697A/ja

1985-08-23 Priority claimed from JP18424585A external-priority patent/JPH0799633B2/ja

1986-07-22 Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 히다찌초에루 에스 아이 엔지니어링 가부시기가이샤 filed Critical 가부시기가이샤 히다찌세이사꾸쇼

1987-03-17 Publication of KR870001664A publication Critical patent/KR870001664A/ko

1994-12-15 Application granted granted Critical

1994-12-15 Publication of KR940011426B1 publication Critical patent/KR940011426B1/ko

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Non-Volatile Memory (AREA)
Read Only Memory (AREA)

KR1019860005950A 1985-07-26 1986-07-22 반도체 기억 장치 KR940011426B1 (ko)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP60164099A JPS6226697A (ja)	1985-07-26	1985-07-26	半導体記憶装置
JP60-164099		1985-07-26
JP60-184245		1985-08-23
JP18424585A JPH0799633B2 (ja)	1985-08-23	1985-08-23	Ｅｅｐｒｏｍ装置

Publications (2)

Publication Number	Publication Date
KR870001664A true KR870001664A (ko)	1987-03-17
KR940011426B1 KR940011426B1 (ko)	1994-12-15

Family

ID=26489325

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019860005950A KR940011426B1 (ko)	1985-07-26	1986-07-22	반도체 기억 장치

Country Status (6)

Country	Link
US (1)	US4769787A (ko)
EP (1)	EP0209912B1 (ko)
KR (1)	KR940011426B1 (ko)
DE (1)	DE3687322T2 (ko)
HK (1)	HK103695A (ko)
SG (1)	SG25395G (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6159688A (ja) *	1984-08-31	1986-03-27	Hitachi Ltd	半導体集積回路装置
JPH081759B2 (ja) *	1987-11-24	1996-01-10	株式会社東芝	不揮発性メモリ
US5253200A (en) *	1987-12-15	1993-10-12	Sony Corporation	Electrically erasable and programmable read only memory using stacked-gate cell
JPH01158777A (ja) *	1987-12-15	1989-06-21	Sony Corp	フローティングゲート型不揮発性メモリ
KR930000963B1 (ko) *	1988-03-09	1993-02-11	가부시기가이샤 도오시바	불휘발성 메모리 회로장치
JPH0271499A (ja) *	1988-09-06	1990-03-12	Hitachi Ltd	半導体記憶装置
JP2573335B2 (ja) *	1988-11-09	1997-01-22	株式会社東芝	不揮発性メモリ
JPH0738274B2 (ja) *	1988-12-22	1995-04-26	株式会社東芝	不揮発性半導体メモリシステム
JPH04123471A (ja)	1990-09-14	1992-04-23	Oki Electric Ind Co Ltd	半導体記憶装置のデータ書込みおよび消去方法
DE4133490C2 (de) *	1991-10-09	1999-06-10	Texas Instruments Deutschland	Verfahren zum Betreiben einer mit einer Versorgungsspannung gespeisten integrierten Halbleiterspeichervorrichtung mit zeilen- und spaltenweise angeordneten Speicherzellen
US5761127A (en) *	1991-11-20	1998-06-02	Fujitsu Limited	Flash-erasable semiconductor memory device having an improved reliability
DE69231751T2 (de) *	1991-12-09	2001-06-28	Fujitsu Ltd	Flash-speicher mit verbesserten löscheigenschaften und schaltung dafür
JP2822791B2 (ja) *	1992-06-30	1998-11-11	日本電気株式会社	半導体装置
AU5545794A (en) *	1992-11-02	1994-05-24	Nvx Corporation	Flash memory system, and methods of constructing and utilizing same
US5644533A (en) *	1992-11-02	1997-07-01	Nvx Corporation	Flash memory system, and methods of constructing and utilizing same
US5557569A (en) *	1993-10-12	1996-09-17	Texas Instruments Incorporated	Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US5511026A (en) *	1993-12-01	1996-04-23	Advanced Micro Devices, Inc.	Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories
US5789776A (en) *	1995-09-22	1998-08-04	Nvx Corporation	Single poly memory cell and array
JP3223877B2 (ja) *	1998-03-27	2001-10-29	日本電気株式会社	半導体記憶装置
JP3874234B2 (ja) *	2000-04-06	2007-01-31	株式会社ルネサステクノロジ	半導体集積回路装置
US6844588B2 (en)	2001-12-19	2005-01-18	Freescale Semiconductor, Inc.	Non-volatile memory
US8072834B2 (en)	2005-08-25	2011-12-06	Cypress Semiconductor Corporation	Line driver circuit and method with standby mode of operation
US7859925B1 (en)	2006-03-31	2010-12-28	Cypress Semiconductor Corporation	Anti-fuse latch self-test circuit and method
US7859906B1 (en)	2007-03-30	2010-12-28	Cypress Semiconductor Corporation	Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit
US8059458B2 (en) *	2007-12-31	2011-11-15	Cypress Semiconductor Corporation	3T high density nvDRAM cell
US8036032B2 (en) *	2007-12-31	2011-10-11	Cypress Semiconductor Corporation	5T high density NVDRAM cell
US8064255B2 (en) *	2007-12-31	2011-11-22	Cypress Semiconductor Corporation	Architecture of a nvDRAM array and its sense regime
IT1400967B1 (it) *	2010-06-15	2013-07-05	St Microelectronics Srl	Dispositivo di memoria non volatile con circuito di riconnessione
IT1400968B1 (it)	2010-06-15	2013-07-05	St Microelectronics Srl	Dispositivo di memoria non-volatile con scarica controllata

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55156370A (en) *	1979-05-25	1980-12-05	Hitachi Ltd	Manufacture of semiconductor device
JPS5835783A (ja) *	1981-08-24	1983-03-02	Fujitsu Ltd	半導体メモリ
JPS5955071A (ja) *	1982-09-24	1984-03-29	Hitachi Micro Comput Eng Ltd	不揮発性半導体装置

1986
- 1986-07-22 US US06/888,072 patent/US4769787A/en not_active Expired - Lifetime
- 1986-07-22 KR KR1019860005950A patent/KR940011426B1/ko not_active IP Right Cessation
- 1986-07-24 DE DE8686110330T patent/DE3687322T2/de not_active Expired - Fee Related
- 1986-07-24 EP EP86110330A patent/EP0209912B1/en not_active Expired - Lifetime
1995
- 1995-02-16 SG SG25395A patent/SG25395G/en unknown
- 1995-06-29 HK HK103695A patent/HK103695A/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR940011426B1 (ko)	1994-12-15
DE3687322T2 (de)	1993-05-27
EP0209912B1 (en)	1992-12-23
DE3687322D1 (de)	1993-02-04
EP0209912A3 (en)	1989-02-01
EP0209912A2 (en)	1987-01-28
HK103695A (en)	1995-07-07
SG25395G (en)	1995-09-01
US4769787A (en)	1988-09-06

Legal Events

Date	Code	Title	Description
1991-06-24	A201	Request for examination
1994-11-21	G160	Decision to publish patent application
1995-04-01	E701	Decision to grant or registration of patent right
1995-04-20	GRNT	Written decision to grant
1998-12-14	FPAY	Annual fee payment	Payment date: 19981214 Year of fee payment: 5
1999-12-16	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
KR860006106A (ko)	1986-08-18	반도체 메모리
KR860009491A (ko)	1986-12-23	반도체 메모리 장치
KR860001484A (ko)	1986-02-26	반도체 기억장치
KR870001664A (ko)	1987-03-17	반도체 기억 장치
KR860005370A (ko)	1986-07-21	반도체 기억장치
DE3650613D1 (de)	1997-05-22	Halbleiteranordnung
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
KR890012387A (ko)	1989-08-26	반도체 기억장치
KR870005391A (ko)	1987-06-08	자기정정기능을 갖춘 반도체메모리
KR880004571A (ko)	1988-06-07	프로그램 가능 반도체 메모리 장치
KR860005441A (ko)	1986-07-23	반도체기억장치
KR880013252A (ko)	1988-11-30	반도체 기억장치
KR850001613A (ko)	1985-03-30	반도체 메모리
DE3671124D1 (de)	1990-06-13	Halbleiterspeicherzelle.
KR860004478A (ko)	1986-06-23	반도체 메모리 장치
KR860002824A (ko)	1986-04-30	반도체 기억장치
KR860005369A (ko)	1986-07-21	반도체 기억장치
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
KR890016569A (ko)	1989-11-29	반도체 기억장치
KR860003606A (ko)	1986-05-28	반도체 메모리 장치
DE3588186D1 (de)	1998-06-25	Halbleiterspeicher mit Serienzugriff
KR900011010A (ko)	1990-07-11	반도체 기억장치
KR900008521A (ko)	1990-06-03	반도체 기억장치
KR860007747A (ko)	1986-10-17	다이내믹형 반도체기억장치