KR890016569A - 반도체 기억장치 - Google Patents
반도체 기억장치Info
- Publication number
- KR890016569A KR890016569A KR1019890005087A KR890005087A KR890016569A KR 890016569 A KR890016569 A KR 890016569A KR 1019890005087 A KR1019890005087 A KR 1019890005087A KR 890005087 A KR890005087 A KR 890005087A KR 890016569 A KR890016569 A KR 890016569A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
- G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63093511A JP2895488B2 (ja) | 1988-04-18 | 1988-04-18 | 半導体記憶装置及び半導体記憶システム |
JP63-93511 | 1988-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890016569A true KR890016569A (ko) | 1989-11-29 |
KR950007834B1 KR950007834B1 (ko) | 1995-07-20 |
Family
ID=14084374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890005087A KR950007834B1 (ko) | 1988-04-18 | 1989-04-18 | 반도체 기억장치 |
Country Status (4)
Country | Link |
---|---|
US (5) | US5497351A (ko) |
JP (1) | JP2895488B2 (ko) |
KR (1) | KR950007834B1 (ko) |
DE (1) | DE3912695C2 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2895488B2 (ja) * | 1988-04-18 | 1999-05-24 | 株式会社東芝 | 半導体記憶装置及び半導体記憶システム |
DE4039934A1 (de) * | 1990-12-14 | 1992-06-17 | Gutehoffnungshuette Man | Einrichtung zum zerquetschen von zusammenbackenden materialien am austrag eines bunkers bzw. an einer foerderbanduebergabestelle |
JP3179788B2 (ja) * | 1991-01-17 | 2001-06-25 | 三菱電機株式会社 | 半導体記憶装置 |
JPH0536271A (ja) * | 1991-07-30 | 1993-02-12 | Nec Corp | 半導体メモリ |
JPH0713859A (ja) * | 1993-06-25 | 1995-01-17 | Mitsubishi Electric Corp | 半導体記憶素子用コントローラ |
US5787267A (en) * | 1995-06-07 | 1998-07-28 | Monolithic System Technology, Inc. | Caching method and circuit for a memory system with circuit module architecture |
US5914899A (en) * | 1995-07-05 | 1999-06-22 | Kabushiki Kaisha Toshiba | Semiconductor memory having a page mode in which previous data in an output circuit is reset before new data is supplied |
US5654932A (en) * | 1995-10-04 | 1997-08-05 | Cirrus Logic, Inc. | Memory devices with selectable access type and methods using the same |
JPH10162580A (ja) * | 1996-11-29 | 1998-06-19 | Mitsubishi Electric Corp | スタティック型半導体記憶装置とその動作方法 |
JPH10283770A (ja) * | 1997-04-07 | 1998-10-23 | Oki Electric Ind Co Ltd | 半導体メモリ装置およびその読み出しおよび書き込み方法 |
KR100295641B1 (ko) * | 1998-01-23 | 2001-08-07 | 김영환 | 글로벌워드라인드라이버 |
US6130843A (en) | 1998-09-02 | 2000-10-10 | Micron Technology, Inc. | Method and circuit for providing a memory device having hidden row access and row precharge times |
JP3881477B2 (ja) | 1999-09-06 | 2007-02-14 | 沖電気工業株式会社 | シリアルアクセスメモリ |
DE102004051158B4 (de) * | 2003-10-30 | 2015-11-26 | Polaris Innovations Ltd. | Integrierter Halbleiterspeicher |
US20060171234A1 (en) * | 2005-01-18 | 2006-08-03 | Liu Skip S | DDR II DRAM data path |
US20060161743A1 (en) * | 2005-01-18 | 2006-07-20 | Khaled Fekih-Romdhane | Intelligent memory array switching logic |
KR100631925B1 (ko) * | 2005-01-28 | 2006-10-04 | 삼성전자주식회사 | 반도체 메모리 장치의 테스트 회로 |
US7817470B2 (en) * | 2006-11-27 | 2010-10-19 | Mosaid Technologies Incorporated | Non-volatile memory serial core architecture |
US7746710B2 (en) * | 2008-01-10 | 2010-06-29 | Micron Technology, Inc. | Data bus power-reduced semiconductor storage apparatus |
US8634268B2 (en) * | 2010-10-27 | 2014-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit having decoding circuits and method of operating the same |
WO2015183834A1 (en) | 2014-05-27 | 2015-12-03 | Rambus Inc. | Memory module with reduced read/write turnaround overhead |
US10074413B2 (en) * | 2016-03-17 | 2018-09-11 | Toshiba Memory Corporation | Semiconductor storage device |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
US4290133A (en) * | 1977-10-25 | 1981-09-15 | Digital Equipment Corporation | System timing means for data processing system |
US4498155A (en) * | 1979-11-23 | 1985-02-05 | Texas Instruments Incorporated | Semiconductor integrated circuit memory device with both serial and random access arrays |
JPS56101687A (en) * | 1979-12-27 | 1981-08-14 | Fujitsu Ltd | Semiconductor memory circuit |
US4630230A (en) * | 1983-04-25 | 1986-12-16 | Cray Research, Inc. | Solid state storage device |
US4646270A (en) * | 1983-09-15 | 1987-02-24 | Motorola, Inc. | Video graphic dynamic RAM |
DD220394A1 (de) * | 1983-10-03 | 1985-03-27 | Zeiss Jena Veb Carl | Auflichtlaengenmesssystem |
JPS60157798A (ja) | 1984-01-26 | 1985-08-19 | Toshiba Corp | 半導体メモリ |
US4599709A (en) * | 1984-02-17 | 1986-07-08 | At&T Bell Laboratories | Byte organized static memory |
JPS618785A (ja) * | 1984-06-21 | 1986-01-16 | Fujitsu Ltd | 記憶装置アクセス制御方式 |
US4725945A (en) * | 1984-09-18 | 1988-02-16 | International Business Machines Corp. | Distributed cache in dynamic rams |
US4663742A (en) * | 1984-10-30 | 1987-05-05 | International Business Machines Corporation | Directory memory system having simultaneous write, compare and bypass capabilites |
JPS61114351A (ja) | 1984-11-08 | 1986-06-02 | Hitachi Ltd | メモリ制御装置 |
US4683555A (en) * | 1985-01-22 | 1987-07-28 | Texas Instruments Incorporated | Serial accessed semiconductor memory with reconfigureable shift registers |
JPS6240693A (ja) * | 1985-08-16 | 1987-02-21 | Fujitsu Ltd | ニブル・モ−ド機能を有する半導体記憶装置 |
JPH0821231B2 (ja) * | 1986-08-13 | 1996-03-04 | 株式会社日立製作所 | 半導体メモリ |
US4800530A (en) * | 1986-08-19 | 1989-01-24 | Kabushiki Kasiha Toshiba | Semiconductor memory system with dynamic random access memory cells |
JPS6350998A (ja) * | 1986-08-19 | 1988-03-03 | Toshiba Corp | 半導体記憶装置 |
JPS6352397A (ja) * | 1986-08-20 | 1988-03-05 | Toshiba Corp | 半導体記憶装置 |
JPS6363198A (ja) * | 1986-09-03 | 1988-03-19 | Toshiba Corp | 半導体記憶装置 |
JP2509577B2 (ja) * | 1986-09-03 | 1996-06-19 | 株式会社東芝 | 半導体記憶装置 |
US5018109A (en) * | 1987-01-16 | 1991-05-21 | Hitachi, Ltd. | Memory including address registers for increasing access speed to the memory |
IT1225476B (it) * | 1987-10-14 | 1990-11-14 | Point Universal Spa | Struttura di riga ottica ad elementi modulari componibili |
JP2895488B2 (ja) * | 1988-04-18 | 1999-05-24 | 株式会社東芝 | 半導体記憶装置及び半導体記憶システム |
-
1988
- 1988-04-18 JP JP63093511A patent/JP2895488B2/ja not_active Expired - Lifetime
-
1989
- 1989-04-18 KR KR1019890005087A patent/KR950007834B1/ko not_active IP Right Cessation
- 1989-04-18 DE DE3912695A patent/DE3912695C2/de not_active Expired - Lifetime
-
1994
- 1994-10-27 US US08/330,120 patent/US5497351A/en not_active Expired - Lifetime
-
1995
- 1995-12-27 US US08/578,900 patent/US6118721A/en not_active Expired - Lifetime
-
2000
- 2000-06-26 US US09/603,895 patent/US6301185B1/en not_active Expired - Fee Related
-
2001
- 2001-08-31 US US09/943,504 patent/US6404696B1/en not_active Expired - Fee Related
-
2002
- 2002-03-15 US US10/097,847 patent/US6538952B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH01267893A (ja) | 1989-10-25 |
DE3912695A1 (de) | 1989-10-26 |
US20020089891A1 (en) | 2002-07-11 |
US6301185B1 (en) | 2001-10-09 |
US6538952B2 (en) | 2003-03-25 |
KR950007834B1 (ko) | 1995-07-20 |
DE3912695C2 (de) | 1998-06-18 |
JP2895488B2 (ja) | 1999-05-24 |
US6118721A (en) | 2000-09-12 |
US20020031037A1 (en) | 2002-03-14 |
US6404696B1 (en) | 2002-06-11 |
US5497351A (en) | 1996-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
|
G160 | Decision to publish patent application | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090626 Year of fee payment: 15 |
|
EXPY | Expiration of term |