KR20020079328A - 액티브 매트릭스형 표시 장치 - Google Patents
액티브 매트릭스형 표시 장치 Download PDFInfo
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- KR20020079328A KR20020079328A KR1020010052376A KR20010052376A KR20020079328A KR 20020079328 A KR20020079328 A KR 20020079328A KR 1020010052376 A KR1020010052376 A KR 1020010052376A KR 20010052376 A KR20010052376 A KR 20010052376A KR 20020079328 A KR20020079328 A KR 20020079328A
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
Description
Claims (13)
- 스위칭 소자로서 박막 트랜지스터를 표시부 또는 구동부에 사용하는 액티브 매트릭스형 표시 장치에 있어서, 상기 박막 트랜지스터는 절연 기판 상에 게이트 전극, 게이트 절연막, 반도체층, 드레인 전극, 소스 전극 및 보호 절연막을 순차 적층하고, 상기 보호 절연막측의 반도체층 표면이 다공질인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 다공질부의 깊이는 상기 보호 절연막측의 반도체층 표면으로부터 1㎚ 이상, 30㎚ 이내인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 반도체층 중, 상기 보호 절연막측의 반도체층 표면으로부터 깊이 1㎚ 이상, 30㎚ 이내의 다공질 영역에서 구멍이 점유하는 체적이 5% 이상인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 다공질부에서의 구멍의 반경의 평균치가 5㎚ 이하인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 반도체층 중 상기 보호 절연막측의 반도체층 표면으로부터 깊이 300㎚ 이내의 다공질 영역에 0.01 원자% 이상 0.1 원자% 미만의 헬륨이 함유된 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 보호 절연막이 유기성 수지인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 스위칭 소자에서, 보호 절연막 상에 형성된 화소 전극이 상기 스위칭 소자와 중첩하는 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 스위칭 소자에서, 보호 절연막 상에 형성된 공통 전극이 상기 스위칭 소자와 중첩하는 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 제1항에 있어서, 상기 스위칭 소자 상에 설치한 제2 게이트 전극(백게이트 전극)에 -40V∼+40V의 전압을 인가한 때의 소스 드레인 간의 전류치가 백게이트 전극을 설치하지 않은 경우의 소스 드레인 간의 전류치의 10배 이하인 것을 특징으로 하는 액티브 매트릭스형 표시 장치.
- 절연 기판 상에 형성된 게이트 전극 상에 게이트 절연막, 반도체층, 컨택트층을 순차 성막하고, 상기 반도체층 및 상기 컨택트층을 섬(island) 형으로 에칭하는 공정,상기 공정 후의 기판 상에 금속층을 성막하고, 에칭에 의해 드레인 전극 및 소스 전극을 형성하는 공정,상기 공정 후의 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 컨택트와 상기 반도체층의 일부를 에칭하여 제거하는 공정,상기 공정후의 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 반도체층 표면에 이온을 조사하여 상기 반도체 표면을 다공질화하는 공정,상기 공정 후의 기판에 보호 절연막을 성막하는 공정을 포함하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
- 제10항에 있어서, 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 반도체층 표면에 조사하는 이온이 He 이온인 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
- 절연 기판 상에 형성된 게이트 전극 상에, 게이트 절연막, 반도체층, 컨택트층을 순차 성막하고, 상기 반도체층 및 상기 컨택트층을 섬(island) 형으로 에칭하는 공정,상기 공정 후의 기판 상에 금속층을 성막하고, 에칭에 의해 드레인 전극 및 소스 전극을 형성하는 공정,상기 공정 후의 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 컨택트층과 상기 반도체층의 일부를 에칭하여 제거하는 공정,상기 공정후, 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 반도체층 표면을 양극화성법에 의해 다공질화하는 공정,상기 공정 후의 기판에 보호 절연막을 성막하는 공정을 포함하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
- 절연 기판 상에 형성된 게이트 전극 상에, 게이트 절연막, 반도체층, 컨택트층을 순차 성막하고, 상기 반도체층 및 상기 컨택트층을 섬(island) 형으로 에칭하는 공정,상기 공정 후의 기판 상에 금속층을 성막하고, 에칭에 의해 드레인 전극 및 소스 전극을 형성하는 공정,상기 공정 후의 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 컨택트층과 상기 반도체층의 일부를 에칭하여 제거하는 공정,상기 공정 후의 기판의 드레인 전극 및 소스 전극 간에 노출된 상기 반도체층 표면에, 분자량이 다른 2종류의 고분자를 결합시킨 자기 조직화 레지스트를 상기 반도체층 표면에 도포하고, 어닐링한 후 자기 조직화한 고분자 혼합물 중의 미립자와 그 미립자 아래의 반도체층을 에칭하여 상기 반도체층 표면을 다공질화하는 공정,상기 공정 후의 기판에 보호 절연막을 성막하는 공정을 포함하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
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TWI481029B (zh) | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
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JP5595004B2 (ja) * | 2008-10-21 | 2014-09-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP5595003B2 (ja) * | 2008-10-23 | 2014-09-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
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US20020145143A1 (en) | 2002-10-10 |
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